FR2284989A1 - Low supply voltage photodiode - has P doped disc on thin centre of silicon chip with rear N doped layer - Google Patents

Low supply voltage photodiode - has P doped disc on thin centre of silicon chip with rear N doped layer

Info

Publication number
FR2284989A1
FR2284989A1 FR7431117A FR7431117A FR2284989A1 FR 2284989 A1 FR2284989 A1 FR 2284989A1 FR 7431117 A FR7431117 A FR 7431117A FR 7431117 A FR7431117 A FR 7431117A FR 2284989 A1 FR2284989 A1 FR 2284989A1
Authority
FR
France
Prior art keywords
doped
silicon chip
disc
centre
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7431117A
Other languages
French (fr)
Other versions
FR2284989B1 (en
Inventor
Gerard Ripoche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7431117A priority Critical patent/FR2284989A1/en
Publication of FR2284989A1 publication Critical patent/FR2284989A1/en
Application granted granted Critical
Publication of FR2284989B1 publication Critical patent/FR2284989B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

High speed PIN photodiode operating with a supply of about 10V for wavelengths greater than 8000 angstrom has a basic 2mm square silicon chip (2) which is 150 microns thick. The light sensitive side has at its centre an 800 micron diameter p doped disc (4) which is 0.3 to 1.0 micros thick. The reverse surface has a rear n doped layer (6) which 0.5 microns thick. The remainder of the chip has a comparatively low n doping. The centre of the chip is cut-away to form a narrow section (5) between 5 and 20 microns thick, with a doping concentration of between 1011 and 1012 atoms per cubic centimetre.
FR7431117A 1974-09-13 1974-09-13 Low supply voltage photodiode - has P doped disc on thin centre of silicon chip with rear N doped layer Granted FR2284989A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7431117A FR2284989A1 (en) 1974-09-13 1974-09-13 Low supply voltage photodiode - has P doped disc on thin centre of silicon chip with rear N doped layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431117A FR2284989A1 (en) 1974-09-13 1974-09-13 Low supply voltage photodiode - has P doped disc on thin centre of silicon chip with rear N doped layer

Publications (2)

Publication Number Publication Date
FR2284989A1 true FR2284989A1 (en) 1976-04-09
FR2284989B1 FR2284989B1 (en) 1978-12-29

Family

ID=9143078

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431117A Granted FR2284989A1 (en) 1974-09-13 1974-09-13 Low supply voltage photodiode - has P doped disc on thin centre of silicon chip with rear N doped layer

Country Status (1)

Country Link
FR (1) FR2284989A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255757A (en) * 1978-12-05 1981-03-10 International Rectifier Corporation High reverse voltage semiconductor device with fast recovery time with central depression
EP0279492A1 (en) * 1987-02-16 1988-08-24 Koninklijke Philips Electronics N.V. Radiation-sensitive semiconductor device
WO1990002419A1 (en) * 1988-08-31 1990-03-08 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
EP0601561A1 (en) * 1992-12-08 1994-06-15 Terumo Kabushiki Kaisha Photoelectric device
EP0697743A1 (en) * 1994-08-17 1996-02-21 Seiko Instruments Inc. Avalanche photodiode joined with with an integrated circuit package and method of fabrication
WO1997023003A1 (en) * 1995-12-20 1997-06-26 Commissariat A L'energie Atomique Ultra-thin ionising radiation detector and methods for making same
US6259099B1 (en) 1996-12-18 2001-07-10 Commissariat A L'energie Atomique Ultra-thin ionizing radiation detector and methods for making same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
RAPPORT DE CONFERENCE: "THE 1966 INTERNATIONAL SOLID-STATE CIRCUIT CONFERENCE" NEW-YORK 1966: "A FAST, HIGH GAIN SILICON PHOTODIODE " H.RUEGG PAGES 56-57) *
REVUE SOVIETIQUE: "RADIO ENGINEERING AND ELECTRONIC PHYSICS", VOL. 6, NO. 11, NOVEMBRE 1971: "HIGH-FREQUENCY SILICON PHOTODIODES WITH P-I-N JUNCTION STRUCTURE" E.A. GEORGIYESKAYA ET AL. PAGES 1978 A 1980 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255757A (en) * 1978-12-05 1981-03-10 International Rectifier Corporation High reverse voltage semiconductor device with fast recovery time with central depression
EP0279492A1 (en) * 1987-02-16 1988-08-24 Koninklijke Philips Electronics N.V. Radiation-sensitive semiconductor device
JPS63204666A (en) * 1987-02-16 1988-08-24 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Radiation sensing semiconductor device
US4857980A (en) * 1987-02-16 1989-08-15 U.S. Philips Corp. Radiation-sensitive semiconductor device with active screening diode
JP2661937B2 (en) 1987-02-16 1997-10-08 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ Radiation sensing semiconductor device
WO1990002419A1 (en) * 1988-08-31 1990-03-08 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
EP0601561A1 (en) * 1992-12-08 1994-06-15 Terumo Kabushiki Kaisha Photoelectric device
EP0697743A1 (en) * 1994-08-17 1996-02-21 Seiko Instruments Inc. Avalanche photodiode joined with with an integrated circuit package and method of fabrication
US5763903A (en) * 1994-08-17 1998-06-09 Seiko Instruments Inc. Avalanche photodiode for light detection
WO1997023003A1 (en) * 1995-12-20 1997-06-26 Commissariat A L'energie Atomique Ultra-thin ionising radiation detector and methods for making same
FR2742878A1 (en) * 1995-12-20 1997-06-27 Commissariat Energie Atomique ULTRA-THIN IONIZING RADIATION DETECTOR AND METHODS OF MAKING SAME
US6259099B1 (en) 1996-12-18 2001-07-10 Commissariat A L'energie Atomique Ultra-thin ionizing radiation detector and methods for making same

Also Published As

Publication number Publication date
FR2284989B1 (en) 1978-12-29

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Legal Events

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