FR2244267A1 - Photoconductive unit with ternary glass semiconductor - contg selenium and tellurium, for light detecting devices - Google Patents
Photoconductive unit with ternary glass semiconductor - contg selenium and tellurium, for light detecting devicesInfo
- Publication number
- FR2244267A1 FR2244267A1 FR7332914A FR7332914A FR2244267A1 FR 2244267 A1 FR2244267 A1 FR 2244267A1 FR 7332914 A FR7332914 A FR 7332914A FR 7332914 A FR7332914 A FR 7332914A FR 2244267 A1 FR2244267 A1 FR 2244267A1
- Authority
- FR
- France
- Prior art keywords
- electrode
- substrate
- glass layer
- light
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title abstract 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title 1
- 229910052711 selenium Inorganic materials 0.000 title 1
- 239000011669 selenium Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052714 tellurium Inorganic materials 0.000 title 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
A photoresistant unit for detecting light comprises an active zone made of ternary semiconductive amorphous glass layer sandwiched between metal electrodes one of which covers entirely one of the surfaces of the glass layer and the other covers virtually the whole of the other surface and rests on an inert substrate. A source of light is so placed that photons emitted there from are directed towards one of the two surfaces of the glass layer. Either the first electrode is semi-transparent and faces the source of light while the other electrode and the substrate are both opaque or the first electrode is opaque while the other electrode is semi-transparent and the substrate is transparent and faces the source of light. In uses the electrodes are electrically connected and voltage applied. The unit is used as a photo-cell and in optoelectronic devices. It exhibits a high photoconductivity gain (>1) and use of the glass layer obviates the need for thermal treatment during or after depositing the glass on the substrate. Other advantages are: homogeneity and reproducibility of the active zone, sensitivity to spectrum emitted by tungsten filament, response time 2 milliseconds and stability to temps. up to 100 degrees C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7332914A FR2244267A1 (en) | 1973-09-13 | 1973-09-13 | Photoconductive unit with ternary glass semiconductor - contg selenium and tellurium, for light detecting devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7332914A FR2244267A1 (en) | 1973-09-13 | 1973-09-13 | Photoconductive unit with ternary glass semiconductor - contg selenium and tellurium, for light detecting devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2244267A1 true FR2244267A1 (en) | 1975-04-11 |
| FR2244267B1 FR2244267B1 (en) | 1978-09-29 |
Family
ID=9124975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7332914A Granted FR2244267A1 (en) | 1973-09-13 | 1973-09-13 | Photoconductive unit with ternary glass semiconductor - contg selenium and tellurium, for light detecting devices |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2244267A1 (en) |
-
1973
- 1973-09-13 FR FR7332914A patent/FR2244267A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2244267B1 (en) | 1978-09-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |