DE3481355D1 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number
DE3481355D1
DE3481355D1 DE8484306527T DE3481355T DE3481355D1 DE 3481355 D1 DE3481355 D1 DE 3481355D1 DE 8484306527 T DE8484306527 T DE 8484306527T DE 3481355 T DE3481355 T DE 3481355T DE 3481355 D1 DE3481355 D1 DE 3481355D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory arrangement
arrangement
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484306527T
Other languages
English (en)
Inventor
Sumio Tanaka
Shinji Koyo-Ofuna-Mansio Saito
Shigeru Atsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3481355D1 publication Critical patent/DE3481355D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
DE8484306527T 1983-09-26 1984-09-25 Halbleiterspeicheranordnung. Expired - Lifetime DE3481355D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17758483A JPH0666115B2 (ja) 1983-09-26 1983-09-26 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3481355D1 true DE3481355D1 (de) 1990-03-15

Family

ID=16033528

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484306527T Expired - Lifetime DE3481355D1 (de) 1983-09-26 1984-09-25 Halbleiterspeicheranordnung.

Country Status (4)

Country Link
US (1) US4692902A (de)
EP (1) EP0136170B1 (de)
JP (1) JPH0666115B2 (de)
DE (1) DE3481355D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2504743B2 (ja) * 1985-03-18 1996-06-05 日本電気株式会社 半導体記憶装置
US4654831A (en) * 1985-04-11 1987-03-31 Advanced Micro Devices, Inc. High speed CMOS current sense amplifier
JPH0770230B2 (ja) * 1985-04-18 1995-07-31 日本電気株式会社 半導体メモリ
JPS6231094A (ja) * 1985-08-01 1987-02-10 Toshiba Corp 不揮発性半導体記憶装置
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4899308A (en) * 1986-12-11 1990-02-06 Fairchild Semiconductor Corporation High density ROM in a CMOS gate array
US5191552A (en) * 1988-06-24 1993-03-02 Kabushiki Kaisha Toshiba Semiconductor memory device with address transition actuated dummy cell
EP0576046B1 (de) * 1988-06-24 1996-03-27 Kabushiki Kaisha Toshiba Halbleiterspeicheranordnung
US5029131A (en) * 1988-06-29 1991-07-02 Seeq Technology, Incorporated Fault tolerant differential memory cell and sensing
JP2601903B2 (ja) * 1989-04-25 1997-04-23 株式会社東芝 半導体記憶装置
US5142496A (en) * 1991-06-03 1992-08-25 Advanced Micro Devices, Inc. Method for measuring VT 's less than zero without applying negative voltages
JP2564067B2 (ja) * 1992-01-09 1996-12-18 株式会社東芝 センス回路を有する読み出し出力回路
US5440506A (en) * 1992-08-14 1995-08-08 Harris Corporation Semiconductor ROM device and method
US5483494A (en) * 1993-04-07 1996-01-09 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having a reduced delay in reading data after changing from standby to an operation mode
KR970051285A (ko) * 1995-12-30 1997-07-29 김주용 센스 증폭기의 차동 전압 증가 장치
JPH11339481A (ja) * 1998-05-25 1999-12-10 Nec Ic Microcomput Syst Ltd 半導体メモリ回路
US6322059B1 (en) 1998-07-23 2001-11-27 Barnes Group Inc. Low contact force spring
FR2794277B1 (fr) 1999-05-25 2001-08-10 St Microelectronics Sa Memoire morte a faible consommation
US6707715B2 (en) * 2001-08-02 2004-03-16 Stmicroelectronics, Inc. Reference generator circuit and method for nonvolatile memory devices
US7212458B1 (en) * 2005-10-25 2007-05-01 Sigmatel, Inc. Memory, processing system and methods for use therewith
US9613714B1 (en) * 2016-01-19 2017-04-04 Ememory Technology Inc. One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method
CN111710355B (zh) * 2020-05-21 2022-05-13 中国人民武装警察部队海警学院 提升sram芯片写能力的差分电源电路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938108A (en) * 1975-02-03 1976-02-10 Intel Corporation Erasable programmable read-only memory
GB1497210A (en) * 1975-05-13 1978-01-05 Ncr Co Matrix memory
US4090257A (en) * 1976-06-28 1978-05-16 Westinghouse Electric Corp. Dual mode MNOS memory with paired columns and differential sense circuit
JPS5310229A (en) * 1976-07-16 1978-01-30 Mitsubishi Electric Corp Decoder circuit
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices
US4249095A (en) * 1979-02-26 1981-02-03 Rca Corporation Comparator, sense amplifier
JPS56156985A (en) * 1980-02-04 1981-12-03 Texas Instruments Inc Decoder
JPS6038000B2 (ja) * 1981-03-03 1985-08-29 株式会社東芝 不揮発性半導体メモリ
JPS57130292A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor nonvolatile read-only storage device
JPS57130291A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor nonvolatile read-only storage device

Also Published As

Publication number Publication date
JPH0666115B2 (ja) 1994-08-24
EP0136170A2 (de) 1985-04-03
JPS6069898A (ja) 1985-04-20
US4692902A (en) 1987-09-08
EP0136170A3 (en) 1986-12-30
EP0136170B1 (de) 1990-02-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)