DE3486082T2 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number
DE3486082T2
DE3486082T2 DE8484304379T DE3486082T DE3486082T2 DE 3486082 T2 DE3486082 T2 DE 3486082T2 DE 8484304379 T DE8484304379 T DE 8484304379T DE 3486082 T DE3486082 T DE 3486082T DE 3486082 T2 DE3486082 T2 DE 3486082T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory arrangement
arrangement
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484304379T
Other languages
English (en)
Other versions
DE3486082D1 (de
Inventor
Tetsuya Nakajima
Masaki Nagahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3486082D1 publication Critical patent/DE3486082D1/de
Publication of DE3486082T2 publication Critical patent/DE3486082T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B61—RAILWAYS
    • B61B—RAILWAY SYSTEMS; EQUIPMENT THEREFOR NOT OTHERWISE PROVIDED FOR
    • B61B1/00—General arrangement of stations, platforms, or sidings; Railway networks; Rail vehicle marshalling systems
    • B61B1/02—General arrangement of stations and platforms including protection devices for the passengers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • Static Random-Access Memory (AREA)
DE8484304379T 1983-06-29 1984-06-28 Halbleiterspeicheranordnung. Expired - Fee Related DE3486082T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58115881A JPS6010492A (ja) 1983-06-29 1983-06-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3486082D1 DE3486082D1 (de) 1993-04-08
DE3486082T2 true DE3486082T2 (de) 1993-06-09

Family

ID=14673481

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484304379T Expired - Fee Related DE3486082T2 (de) 1983-06-29 1984-06-28 Halbleiterspeicheranordnung.

Country Status (5)

Country Link
US (1) US4747083A (de)
EP (1) EP0130793B1 (de)
JP (1) JPS6010492A (de)
KR (1) KR910003595B1 (de)
DE (1) DE3486082T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810556B2 (ja) * 1986-04-17 1996-01-31 株式会社日立製作所 半導体メモリ回路
US4942555A (en) * 1986-04-17 1990-07-17 Hitachi, Ltd. Bi-MOS semiconductor memory having high soft error immunity
JP2629697B2 (ja) * 1987-03-27 1997-07-09 日本電気株式会社 半導体記憶装置
US5222047A (en) * 1987-05-15 1993-06-22 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for driving word line in block access memory
KR930007185B1 (ko) * 1989-01-13 1993-07-31 가부시키가이샤 도시바 레지스터뱅크회로
EP0624844A2 (de) * 1993-05-11 1994-11-17 International Business Machines Corporation Völlig integrierte Cache-Speicherarchitektur
US5506816A (en) * 1994-09-06 1996-04-09 Nvx Corporation Memory cell array having compact word line arrangement
US5774413A (en) * 1996-12-12 1998-06-30 Cypress Semiconductor Corporation Sensed wordline driver
KR100268889B1 (ko) * 1997-10-28 2000-10-16 김영환 반도체 메모리 장치의 워드라인 구동회로
US6144610A (en) * 1999-04-20 2000-11-07 Winbond Electronics Corporation Distributed circuits to turn off word lines in a memory array
JP4962828B2 (ja) 2004-08-25 2012-06-27 マイクロン テクノロジー， インク． ワード線ドライバ回路およびこれを利用する方法
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US8929120B2 (en) 2012-08-29 2015-01-06 Micron Technology, Inc. Diode segmentation in memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3695855A (en) * 1970-01-08 1972-10-03 Ibm Doped electrical current-carrying conductive material
JPS5567993A (en) * 1978-11-14 1980-05-22 Fujitsu Ltd Semiconductor memory unit
JPS55150189A (en) * 1979-05-10 1980-11-21 Nec Corp Memory circuit
JPS5637884A (en) * 1979-08-30 1981-04-11 Fujitsu Ltd Terminating circuit for word selective signal line of semiconductor memory unit
JPS56105386A (en) * 1980-01-22 1981-08-21 Fujitsu Ltd Semiconductor memory device
JPS5841596B2 (ja) * 1980-11-28 1983-09-13 富士通株式会社 スタティック型半導体記憶装置
JPS57133586A (en) * 1981-02-06 1982-08-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor storage circuit
JPS57176590A (en) * 1981-04-21 1982-10-29 Ricoh Co Ltd Memory device
JPS5894187A (ja) * 1981-11-28 1983-06-04 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0130793B1 (de) 1993-03-03
KR850000126A (ko) 1985-02-25
JPS6010492A (ja) 1985-01-19
KR910003595B1 (ko) 1991-06-07
DE3486082D1 (de) 1993-04-08
EP0130793A3 (en) 1987-09-30
EP0130793A2 (de) 1985-01-09
US4747083A (en) 1988-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee