FR2794277B1 - Memoire morte a faible consommation - Google Patents
Memoire morte a faible consommationInfo
- Publication number
- FR2794277B1 FR2794277B1 FR9906736A FR9906736A FR2794277B1 FR 2794277 B1 FR2794277 B1 FR 2794277B1 FR 9906736 A FR9906736 A FR 9906736A FR 9906736 A FR9906736 A FR 9906736A FR 2794277 B1 FR2794277 B1 FR 2794277B1
- Authority
- FR
- France
- Prior art keywords
- low consumption
- dead memory
- consumption dead
- memory
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9906736A FR2794277B1 (fr) | 1999-05-25 | 1999-05-25 | Memoire morte a faible consommation |
US09/577,786 US6282114B1 (en) | 1999-05-25 | 2000-05-24 | Low consumption ROM |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9906736A FR2794277B1 (fr) | 1999-05-25 | 1999-05-25 | Memoire morte a faible consommation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2794277A1 FR2794277A1 (fr) | 2000-12-01 |
FR2794277B1 true FR2794277B1 (fr) | 2001-08-10 |
Family
ID=9546090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9906736A Expired - Fee Related FR2794277B1 (fr) | 1999-05-25 | 1999-05-25 | Memoire morte a faible consommation |
Country Status (2)
Country | Link |
---|---|
US (1) | US6282114B1 (fr) |
FR (1) | FR2794277B1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3420133B2 (ja) * | 1999-10-13 | 2003-06-23 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
FR2809526B1 (fr) * | 2000-05-24 | 2003-07-25 | St Microelectronics Sa | Memoire rom de taille reduite |
JP2002100196A (ja) * | 2000-09-26 | 2002-04-05 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
US7050354B2 (en) * | 2003-12-16 | 2006-05-23 | Freescale Semiconductor, Inc. | Low-power compiler-programmable memory with fast access timing |
US7212458B1 (en) * | 2005-10-25 | 2007-05-01 | Sigmatel, Inc. | Memory, processing system and methods for use therewith |
JP2008130107A (ja) * | 2006-11-16 | 2008-06-05 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
US8605480B2 (en) * | 2010-12-28 | 2013-12-10 | Stmicroelectronics International N.V. | Read only memory device with complemenary bit line pair |
US9042187B2 (en) | 2012-09-17 | 2015-05-26 | Intel Corporation | Using a reference bit line in a memory |
US8964485B2 (en) | 2012-11-19 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuit with transistors having different threshold voltages and method of operating the memory circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0666115B2 (ja) * | 1983-09-26 | 1994-08-24 | 株式会社東芝 | 半導体記憶装置 |
US5828601A (en) * | 1993-12-01 | 1998-10-27 | Advanced Micro Devices, Inc. | Programmed reference |
US5680357A (en) * | 1996-09-09 | 1997-10-21 | Hewlett Packard Company | High speed, low noise, low power, electronic memory sensing scheme |
-
1999
- 1999-05-25 FR FR9906736A patent/FR2794277B1/fr not_active Expired - Fee Related
-
2000
- 2000-05-24 US US09/577,786 patent/US6282114B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6282114B1 (en) | 2001-08-28 |
FR2794277A1 (fr) | 2000-12-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20090119 |