FR2549295B1 - Dispositif semi-conducteur sensible au rayonnement - Google Patents
Dispositif semi-conducteur sensible au rayonnementInfo
- Publication number
- FR2549295B1 FR2549295B1 FR8410787A FR8410787A FR2549295B1 FR 2549295 B1 FR2549295 B1 FR 2549295B1 FR 8410787 A FR8410787 A FR 8410787A FR 8410787 A FR8410787 A FR 8410787A FR 2549295 B1 FR2549295 B1 FR 2549295B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- radiation sensitive
- sensitive semiconductor
- radiation
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Curing Cements, Concrete, And Artificial Stone (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE8302516,A NL187416C (nl) | 1983-07-14 | 1983-07-14 | Stralingsgevoelige halfgeleiderinrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2549295A1 FR2549295A1 (fr) | 1985-01-18 |
FR2549295B1 true FR2549295B1 (fr) | 1987-07-31 |
Family
ID=19842158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8410787A Expired FR2549295B1 (fr) | 1983-07-14 | 1984-07-06 | Dispositif semi-conducteur sensible au rayonnement |
Country Status (12)
Country | Link |
---|---|
US (1) | US4652899A (fr) |
JP (2) | JPS6126539A (fr) |
AT (1) | AT392704B (fr) |
AU (1) | AU3057484A (fr) |
CA (1) | CA1243103A (fr) |
DE (1) | DE3425309C2 (fr) |
ES (1) | ES534204A0 (fr) |
FR (1) | FR2549295B1 (fr) |
GB (1) | GB2143373B (fr) |
IT (1) | IT1176383B (fr) |
NL (1) | NL187416C (fr) |
SE (2) | SE8403661L (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2628562A1 (fr) * | 1988-03-11 | 1989-09-15 | Thomson Csf | Dispositif d'imagerie a structure matricielle |
US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
JP2711038B2 (ja) * | 1991-11-20 | 1998-02-10 | 富士通株式会社 | 光検知装置 |
EP2287917B1 (fr) * | 1999-02-25 | 2016-05-25 | Canon Kabushiki Kaisha | Photorecepteur et dispositif de conversion photoélectrique |
JP3467013B2 (ja) | 1999-12-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
US6960817B2 (en) * | 2000-04-21 | 2005-11-01 | Canon Kabushiki Kaisha | Solid-state imaging device |
RU2290721C2 (ru) | 2004-05-05 | 2006-12-27 | Борис Анатольевич Долгошеин | Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя |
RU2416840C2 (ru) * | 2006-02-01 | 2011-04-20 | Конинклейке Филипс Электроникс, Н.В. | Лавинный фотодиод в режиме счетчика гейгера |
CN102460212B (zh) * | 2009-06-05 | 2017-03-22 | Rti电子公司 | X射线检测装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1072080A (en) * | 1965-12-31 | 1967-06-14 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
US3501678A (en) * | 1967-06-28 | 1970-03-17 | Ortec | Tapered-shelf semiconductor |
US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
US3994012A (en) * | 1975-05-07 | 1976-11-23 | The Regents Of The University Of Minnesota | Photovoltaic semi-conductor devices |
DE2927126A1 (de) * | 1979-07-05 | 1981-01-08 | Standard Elektrik Lorenz Ag | Photodiode |
US4394676A (en) * | 1980-12-17 | 1983-07-19 | Agouridis Dimitrios C | Photovoltaic radiation detector element |
-
1983
- 1983-07-14 NL NLAANVRAGE8302516,A patent/NL187416C/xx not_active IP Right Cessation
-
1984
- 1984-07-02 US US06/627,309 patent/US4652899A/en not_active Expired - Fee Related
- 1984-07-06 FR FR8410787A patent/FR2549295B1/fr not_active Expired
- 1984-07-10 DE DE3425309A patent/DE3425309C2/de not_active Expired - Fee Related
- 1984-07-11 SE SE8403661D patent/SE8403661L/xx not_active Application Discontinuation
- 1984-07-11 IT IT21834/84A patent/IT1176383B/it active
- 1984-07-11 ES ES534204A patent/ES534204A0/es active Granted
- 1984-07-11 GB GB08417670A patent/GB2143373B/en not_active Expired
- 1984-07-11 CA CA000458633A patent/CA1243103A/fr not_active Expired
- 1984-07-11 JP JP14248184A patent/JPS6126539A/ja active Pending
- 1984-07-11 SE SE8403661A patent/SE460002B/sv not_active IP Right Cessation
- 1984-07-11 JP JP59142479A patent/JPS6057677A/ja active Granted
- 1984-07-12 AT AT2254/84A patent/AT392704B/de not_active IP Right Cessation
- 1984-07-13 AU AU30574/84A patent/AU3057484A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
SE460002B (sv) | 1989-08-28 |
NL8302516A (nl) | 1985-02-01 |
FR2549295A1 (fr) | 1985-01-18 |
CA1243103A (fr) | 1988-10-11 |
GB2143373A (en) | 1985-02-06 |
NL187416C (nl) | 1991-09-16 |
GB8417670D0 (en) | 1984-08-15 |
GB2143373B (en) | 1986-11-12 |
NL187416B (nl) | 1991-04-16 |
AT392704B (de) | 1991-05-27 |
SE8403661L (sv) | 1985-01-15 |
JPS6126539A (ja) | 1986-02-05 |
ES8505144A1 (es) | 1985-04-16 |
US4652899A (en) | 1987-03-24 |
DE3425309A1 (de) | 1985-01-24 |
IT1176383B (it) | 1987-08-18 |
JPH0527997B2 (fr) | 1993-04-22 |
ES534204A0 (es) | 1985-04-16 |
IT8421834A1 (it) | 1986-01-11 |
SE8403661D0 (sv) | 1984-07-11 |
DE3425309C2 (de) | 1994-02-10 |
ATA225484A (de) | 1990-10-15 |
IT8421834A0 (it) | 1984-07-11 |
JPS6057677A (ja) | 1985-04-03 |
AU3057484A (en) | 1985-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2521330B1 (fr) | Dispositif sensible au toucher | |
FR2486309B1 (fr) | Dispositif semiconducteur sensible au rayonnement | |
DE3889477D1 (de) | Strahlungsempfindliche Halbleiteranordnung. | |
FR2625043B1 (fr) | Dispositif semi-conducteur | |
FR2479453B1 (fr) | Dispositif detecteur | |
FR2520158B1 (fr) | Dispositif electro-optique integre multicouche | |
KR850008251A (ko) | 내열 구조의 플라스틱 밀봉형 ic 장치 | |
KR860004479A (ko) | 반도체 광검출기 장치 | |
FR2489593B1 (fr) | Dispositif redresseur a semi-conducteurs | |
FR2540658B1 (fr) | Dispositif electro-optique | |
FR2539304B3 (fr) | Dispositif d'irradiation | |
DE3486418D1 (de) | Halbleiterspeicheranordnung | |
FR2575865B1 (fr) | Dispositif semi-conducteur integre | |
FR2549295B1 (fr) | Dispositif semi-conducteur sensible au rayonnement | |
FR2534078B1 (fr) | Dispositif laser a semi-conducteur | |
FR2493603B1 (fr) | Dispositif semiconducteur | |
BE863929A (fr) | Dispositif semi-conducteur | |
FR2534079B1 (fr) | Dispositif laser a semi-conducteur | |
FR2545974B1 (fr) | Dispositif electromagnetique | |
FR2341204A1 (fr) | Dispositif semi-conducteur | |
BE877850A (fr) | Dispositif semiconducteur | |
MA20423A1 (fr) | Dispositif semi-conducteur . | |
FR2559672B1 (fr) | Dispositif d'irradiation | |
DE3684873D1 (de) | Halbleiterphotoempfindliche vorrichtung. | |
FR2539872B1 (fr) | Dispositif de pyrometrie a radiations |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |