DE3889477D1 - Strahlungsempfindliche Halbleiteranordnung. - Google Patents

Strahlungsempfindliche Halbleiteranordnung.

Info

Publication number
DE3889477D1
DE3889477D1 DE3889477T DE3889477T DE3889477D1 DE 3889477 D1 DE3889477 D1 DE 3889477D1 DE 3889477 T DE3889477 T DE 3889477T DE 3889477 T DE3889477 T DE 3889477T DE 3889477 D1 DE3889477 D1 DE 3889477D1
Authority
DE
Germany
Prior art keywords
semiconductor device
radiation sensitive
sensitive semiconductor
radiation
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3889477T
Other languages
English (en)
Other versions
DE3889477T2 (de
Inventor
Arthur Marie Eugen Hoeberechts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3889477D1 publication Critical patent/DE3889477D1/de
Application granted granted Critical
Publication of DE3889477T2 publication Critical patent/DE3889477T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
DE3889477T 1987-02-16 1988-02-12 Strahlungsempfindliche Halbleiteranordnung. Expired - Fee Related DE3889477T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8700370A NL8700370A (nl) 1987-02-16 1987-02-16 Stralingsgevoelige halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
DE3889477D1 true DE3889477D1 (de) 1994-06-16
DE3889477T2 DE3889477T2 (de) 1994-11-03

Family

ID=19849577

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3889477T Expired - Fee Related DE3889477T2 (de) 1987-02-16 1988-02-12 Strahlungsempfindliche Halbleiteranordnung.

Country Status (6)

Country Link
US (1) US4857980A (de)
EP (1) EP0279492B1 (de)
JP (1) JP2661937B2 (de)
CA (1) CA1291554C (de)
DE (1) DE3889477T2 (de)
NL (1) NL8700370A (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59008698D1 (de) * 1989-09-07 1995-04-20 Siemens Ag Optokoppler.
FR2666690B1 (fr) * 1990-09-07 1997-01-31 Thomson Composants Militaires Detecteur infrarouge a substrat aminci et procede de fabrication.
JPH0645340A (ja) * 1991-11-12 1994-02-18 Rohm Co Ltd 半導体装置及びその製造方法
CA2088612C (en) * 1992-02-03 2003-04-15 Yoshiki Kuhara Semiconductor light detecting device
US5923071A (en) * 1992-06-12 1999-07-13 Seiko Instruments Inc. Semiconductor device having a semiconductor film of low oxygen concentration
US5365087A (en) * 1992-07-15 1994-11-15 Sumitomo Electric Industries, Ltd. Photodetector and opto-electronic integrated circuit with guard ring
JPH06196727A (ja) * 1992-12-08 1994-07-15 Terumo Corp 光電変換装置
JPH08152356A (ja) * 1994-11-30 1996-06-11 Terumo Corp 赤外線センサ
US5852322A (en) * 1995-05-19 1998-12-22 Dr. Johannes Heidenhain Gmbh Radiation-sensitive detector element and method for producing it
FR2742878B1 (fr) * 1995-12-20 1998-01-16 Commissariat Energie Atomique Detecteur de rayonnements ionisants ultra-mince et procedes de realisation d'un tel detecteur
US6259099B1 (en) 1996-12-18 2001-07-10 Commissariat A L'energie Atomique Ultra-thin ionizing radiation detector and methods for making same
JP4131998B2 (ja) * 1998-04-30 2008-08-13 佐々木 実 透明な半導体受光素子およびその製造方法
WO2001082382A1 (en) * 2000-04-20 2001-11-01 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes
US6593636B1 (en) * 2000-12-05 2003-07-15 Udt Sensors, Inc. High speed silicon photodiodes and method of manufacture
EP1835539B1 (de) * 2002-08-09 2012-10-31 Hamamatsu Photonics K.K. Photodiodenarray sowie Herstellungsverfahren dafür
KR101029178B1 (ko) * 2003-03-10 2011-04-12 하마마츠 포토닉스 가부시키가이샤 포토다이오드 어레이 및 그 제조방법 그리고 방사선 검출기
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
JP2005045073A (ja) * 2003-07-23 2005-02-17 Hamamatsu Photonics Kk 裏面入射型光検出素子
JP4499385B2 (ja) 2003-07-29 2010-07-07 浜松ホトニクス株式会社 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法
GB0411926D0 (en) 2004-05-27 2004-06-30 Isis Innovation Direct electron detector
JP4765285B2 (ja) * 2004-09-13 2011-09-07 ソニー株式会社 固体撮像素子及びその製造方法
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
BRPI0919221A2 (pt) 2008-09-15 2015-12-08 Osi Optoelectronics Inc fotodiodo de espinha de peixe de camada ativa fina com uma camada n+ rasa e método de fabricação do mesmo
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
DE102011102007B4 (de) 2011-05-19 2012-12-27 Austriamicrosystems Ag Fotodiode und Herstellungsverfahren
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
JP6529743B2 (ja) * 2014-11-06 2019-06-12 株式会社豊田中央研究所 光電変換素子
US11309412B1 (en) * 2017-05-17 2022-04-19 Northrop Grumman Systems Corporation Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring
CN114242802A (zh) * 2021-12-17 2022-03-25 江苏尚飞光电科技股份有限公司 一种背照式光电探测器及其阵列

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL218102A (de) * 1956-08-24
US3296502A (en) * 1962-11-28 1967-01-03 Gen Instrument Corp Variable photosensitive semiconductor device having a graduatingly different operable surface area
US3716429A (en) * 1970-06-18 1973-02-13 Rca Corp Method of making semiconductor devices
JPS5641186B2 (de) * 1972-03-03 1981-09-26
DE2251325A1 (de) * 1972-10-19 1974-05-02 Siemens Ag Messwertumformer fuer teilchen- oder photonenstrahlen mit geringem sperr- und diffusionsstrom
FR2284989A1 (fr) * 1974-09-13 1976-04-09 Comp Generale Electricite Photodetecteur rapide a faible tension d'alimentation
JPS6032812B2 (ja) * 1978-02-10 1985-07-30 日本電気株式会社 光検出器
NL8003906A (nl) * 1980-07-07 1982-02-01 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
JPS60144982A (ja) * 1984-01-06 1985-07-31 Nec Corp ホトダイオ−ド
JPS60193385A (ja) * 1984-03-15 1985-10-01 Sanyo Electric Co Ltd 光起電力素子
JPS61229371A (ja) * 1985-04-04 1986-10-13 Kokusai Denshin Denwa Co Ltd <Kdd> フオトダイオ−ド

Also Published As

Publication number Publication date
JPS63204666A (ja) 1988-08-24
JP2661937B2 (ja) 1997-10-08
EP0279492A1 (de) 1988-08-24
CA1291554C (en) 1991-10-29
EP0279492B1 (de) 1994-05-11
NL8700370A (nl) 1988-09-16
US4857980A (en) 1989-08-15
DE3889477T2 (de) 1994-11-03

Similar Documents

Publication Publication Date Title
DE3889477T2 (de) Strahlungsempfindliche Halbleiteranordnung.
DE3850855D1 (de) Halbleitervorrichtung.
DE68917848T2 (de) Halbleiteranordnung.
DE3886233D1 (de) Halbleiter-Strahlungsdetektor.
DE3875767D1 (de) Halbleiter-festwertspeichereinrichtung.
DE3887224D1 (de) Halbleiterspeicheranordnung.
FR2625043B1 (fr) Dispositif semi-conducteur
DE68921421T2 (de) Halbleitervorrichtung.
DE3786070T2 (de) Umhüllte Halbleiteranordnung.
DE3884022T2 (de) Halbleiterspeicheranordnung.
DE3773957D1 (de) Halbleitervorrichtung.
DE3889872D1 (de) Halbleiterspeicheranordnung.
DE3889354T2 (de) Halbleiteranordnung.
DE68914794D1 (de) Lichtempfindliche Halbleitervorrichtung.
DE3865702D1 (de) Halbleiter-festwertspeichereinrichtung.
DE3751342D1 (de) Halbleiter-Bildaufnahmevorrichtung.
DE3876666T2 (de) Halbleiter-festwertspeichereinrichtung.
DE68917971D1 (de) Halbleitervorrichtung.
DE3764425D1 (de) Bestrahlungseinrichtung.
DE3853437D1 (de) Halbleiterspeicheranordnung.
IT8421834A0 (it) Dispositivo semiconduttore sensibile a radiazioni.
DE58906481D1 (de) Bestrahlungsgerät.
DE3883822T2 (de) Halbleiterspeichervorrichtung.
DE68914885D1 (de) Halbleitervorrichtung.
DE3684873D1 (de) Halbleiterphotoempfindliche vorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee