JP4499385B2 - 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法 - Google Patents
裏面入射型光検出素子及び裏面入射型光検出素子の製造方法 Download PDFInfo
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- Computer Hardware Design (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (9)
- 第1導電型の半導体基板と、
前記半導体基板の第1面側における表層に設けられ、第2導電型の不純物半導体領域と、
前記半導体基板の第2面における前記不純物半導体領域に対向する領域に形成され、被検出光が入射する凹部と、
前記凹部上から前記凹部の外縁部上に亘って前記第2面上に設けられ、前記被検出光を前記凹部へと透過させる樹脂からなるとともに、表面が実質的に平坦な被覆層と、
前記被覆層の前記表面上に設けられ、前記被検出光を前記被覆層へと透過させる窓板と、
を備え、
前記窓板は、前記凹部上から前記凹部の前記外縁部上に亘って、前記被覆層と密着していることを特徴とする裏面入射型光検出素子。 - 前記被覆層は、前記第2面上に設けられた第1樹脂層と、前記第1樹脂層上に設けられ、前記第1樹脂層と反対側の面が実質的に平坦な第2樹脂層とから構成されており、
前記第1樹脂層は、前記第2面の前記凹部上に設けられた部分が、前記凹部の前記外縁部上に設けられた部分に対して窪んでいることを特徴とする請求項1に記載の裏面入射型光検出素子。 - 前記半導体基板の前記第1面上に設けられ、前記半導体基板を支持する支持膜を備えることを特徴とする請求項1又は2に記載の裏面入射型光検出素子。
- 前記支持膜を貫通するとともに、一端が前記不純物半導体領域と電気的に接続された充填電極を備えることを特徴とする請求項3に記載の裏面入射型光検出素子。
- 前記窓板は、その厚さ方向に垂直な面での断面形状が、少なくとも1つの角が切り欠かれた四角形であることを特徴とする請求項1〜4のいずれか一項に記載の裏面入射型光検出素子。
- 前記半導体基板の側面全体に、前記第1導電型の不純物が高濃度に添加された高濃度不純物半導体領域が露出していることを特徴とする請求項1〜5のいずれか一項に記載の裏面入射型光検出素子。
- 前記半導体基板の前記第2面側における表層のうち、前記凹部の底面部分に、前記第1導電型の不純物が高濃度に添加された高濃度不純物半導体層が設けられていることを特徴とする請求項1〜6のいずれか一項に記載の裏面入射型光検出素子。
- 前記半導体基板の前記外縁部の前記第2面側における表層に、前記第1導電型の不純物が高濃度に添加された高濃度不純物半導体層が設けられていることを特徴とする請求項1〜7のいずれか一項に記載の裏面入射型光検出素子。
- 第1導電型の半導体基板の第1面側における表層に、第2導電型の不純物半導体領域を形成する不純物半導体領域形成工程と、
前記半導体基板の第2面における前記不純物半導体領域に対向する領域に、被検出光が入射する凹部を形成する凹部形成工程と、
前記第2面の前記凹部上から前記凹部の外縁部上に亘って、樹脂層を形成する樹脂層形成工程と、
前記樹脂層を硬化させる前に、前記被検出光を透過させる窓板を前記樹脂層に対して押し付けることにより、前記窓板を、前記凹部上から前記凹部の前記外縁部上に亘って、前記樹脂層に密着して貼り付ける窓板貼り付け工程と、
を備えることを特徴とする裏面入射型光検出素子の製造方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003282162A JP4499385B2 (ja) | 2003-07-29 | 2003-07-29 | 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法 |
PCT/JP2004/010411 WO2005011004A1 (ja) | 2003-07-29 | 2004-07-22 | 裏面入射型光検出素子 |
CNB2004800217431A CN100502058C (zh) | 2003-07-29 | 2004-07-22 | 背面入射型光检测元件 |
US10/565,945 US7768086B2 (en) | 2003-07-29 | 2004-07-22 | Backside-illuminated photodetector |
KR1020057020827A KR20060061294A (ko) | 2003-07-29 | 2004-07-22 | 이면 입사형 광검출 소자 |
EP04770875A EP1653520B1 (en) | 2003-07-29 | 2004-07-22 | Backside-illuminated photodetector |
DE602004019654T DE602004019654D1 (de) | 2003-07-29 | 2004-07-22 | Rückseiten-beleuchteter fotodetektor |
TW093122535A TW200511569A (en) | 2003-07-29 | 2004-07-28 | Back incidence type light detection component |
IL173374A IL173374A (en) | 2003-07-29 | 2006-01-26 | Back illuminated photodetector |
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JP2003282162A JP4499385B2 (ja) | 2003-07-29 | 2003-07-29 | 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法 |
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JP2005051078A JP2005051078A (ja) | 2005-02-24 |
JP4499385B2 true JP4499385B2 (ja) | 2010-07-07 |
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US (1) | US7768086B2 (ja) |
EP (1) | EP1653520B1 (ja) |
JP (1) | JP4499385B2 (ja) |
KR (1) | KR20060061294A (ja) |
CN (1) | CN100502058C (ja) |
DE (1) | DE602004019654D1 (ja) |
IL (1) | IL173374A (ja) |
TW (1) | TW200511569A (ja) |
WO (1) | WO2005011004A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4641820B2 (ja) | 2005-02-17 | 2011-03-02 | 三洋電機株式会社 | 半導体装置の製造方法 |
US20070236591A1 (en) * | 2006-04-11 | 2007-10-11 | Tam Samuel W | Method for mounting protective covers over image capture devices and devices manufactured thereby |
JP4200463B2 (ja) * | 2006-07-07 | 2008-12-24 | Tdk株式会社 | 受光素子及びそれを用いた光ヘッド並びにそれを用いた光記録再生装置 |
EP1879230A1 (en) * | 2006-07-10 | 2008-01-16 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method of the same |
FR2906079B1 (fr) | 2006-09-19 | 2009-02-20 | E2V Semiconductors Soc Par Act | Capteur d'image en couleur a colorimetrie amelioree |
JP4693827B2 (ja) * | 2007-09-20 | 2011-06-01 | 株式会社東芝 | 半導体装置とその製造方法 |
TW200937642A (en) * | 2007-12-19 | 2009-09-01 | Heptagon Oy | Wafer stack, integrated optical device and method for fabricating the same |
EP2075840B1 (en) * | 2007-12-28 | 2014-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for dicing a wafer with semiconductor elements formed thereon and corresponding device |
US20100116970A1 (en) * | 2008-11-12 | 2010-05-13 | Wen-Long Chou | Photo detection device |
DE102011102007B4 (de) | 2011-05-19 | 2012-12-27 | Austriamicrosystems Ag | Fotodiode und Herstellungsverfahren |
KR101310742B1 (ko) * | 2011-11-21 | 2013-09-25 | 주식회사 지멤스 | 배면 조사형 이미지 센서 및 그 제조방법 |
JP6065470B2 (ja) * | 2012-08-31 | 2017-01-25 | セイコーエプソン株式会社 | 撮像装置、検査装置、及び電子デバイスの製造方法 |
JP6065508B2 (ja) * | 2012-10-05 | 2017-01-25 | セイコーエプソン株式会社 | 撮像装置の製造方法 |
JP6006602B2 (ja) * | 2012-10-09 | 2016-10-12 | 旭化成エレクトロニクス株式会社 | 量子型赤外線センサ及びその製造方法 |
CN102956739B (zh) * | 2012-10-17 | 2015-06-10 | 黄秋 | 微光电感单元及其背读式半导体光电倍增管及其组件 |
JP2014186006A (ja) * | 2013-03-25 | 2014-10-02 | Toshiba Corp | 赤外線撮像装置および赤外線撮像モジュール |
JP2017152252A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ジャパンディスプレイ | 表示装置 |
US9859311B1 (en) * | 2016-11-28 | 2018-01-02 | Omnivision Technologies, Inc. | Storage gate protection |
TWI672806B (zh) * | 2018-06-22 | 2019-09-21 | 晶相光電股份有限公司 | 全域快門互補式金屬氧化物半導體影像感測器及其形成方法 |
JP7389029B2 (ja) * | 2018-06-29 | 2023-11-29 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、電子機器、および固体撮像装置の製造方法 |
JP6609674B1 (ja) * | 2018-07-11 | 2019-11-20 | 浜松ホトニクス株式会社 | 光検出装置及び光検出装置の製造方法 |
DE102020115899A1 (de) | 2019-09-30 | 2021-04-01 | Taiwan Semiconductor Manufacturing Co. Ltd. | Verfahren zum bilden eines bildsensors |
US11393866B2 (en) * | 2019-09-30 | 2022-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming an image sensor |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02185070A (ja) * | 1989-01-12 | 1990-07-19 | Matsushita Electric Ind Co Ltd | 受光素子とその製造方法 |
JPH05135261A (ja) * | 1991-11-12 | 1993-06-01 | Matsushita Refrig Co Ltd | 自動販売機 |
JPH08111542A (ja) * | 1994-08-17 | 1996-04-30 | Seiko Instr Inc | アバランシェ・フォト・ダイオード及びその製造方法 |
JPH08293476A (ja) * | 1995-04-21 | 1996-11-05 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体ウエハならびにフォトマスク |
WO1996036999A1 (de) * | 1995-05-19 | 1996-11-21 | Dr. Johannes Heidenhain Gmbh | Strahlungsempfindliches detektorelement und verfahren zur herstellung desselben |
JP2000502215A (ja) * | 1995-12-21 | 2000-02-22 | ドクトル ヨハネス ハイデンハイン ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光電センサ素子 |
JP2000299489A (ja) * | 1999-04-15 | 2000-10-24 | Hamamatsu Photonics Kk | 光電変換素子及び光受信器 |
JP2002319669A (ja) * | 2001-04-23 | 2002-10-31 | Hamamatsu Photonics Kk | 裏面入射型ホトダイオード及びホトダイオードアレイ |
WO2004019411A1 (ja) * | 2002-08-09 | 2004-03-04 | Hamamatsu Photonics K.K. | フォトダイオードアレイ、その製造方法、及び放射線検出器 |
WO2005008788A1 (ja) * | 2003-07-23 | 2005-01-27 | Hamamatsu Photonics K.K. | 裏面入射型光検出素子 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5098630A (en) * | 1985-03-08 | 1992-03-24 | Olympus Optical Co., Ltd. | Method of molding a solid state image pickup device |
NL8700370A (nl) | 1987-02-16 | 1988-09-16 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting. |
FR2656738B1 (fr) | 1989-12-29 | 1995-03-17 | Telemecanique | Procede pour fabriquer un dispositif semiconducteur, dispositif et composant semiconducteur obtenus par le procede. |
DE4102285A1 (de) | 1991-01-26 | 1992-08-06 | Messerschmitt Boelkow Blohm | Verfahren zur herstellung einer membrandiode |
JPH05136261A (ja) | 1991-11-15 | 1993-06-01 | Kawasaki Steel Corp | 半導体チツプ及びウエハのダイシング方法 |
JP2950714B2 (ja) * | 1993-09-28 | 1999-09-20 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
JPH09219421A (ja) | 1996-02-14 | 1997-08-19 | Hitachi Ltd | 半導体電子部品の製造方法およびウエハ |
JP3678526B2 (ja) | 1997-02-10 | 2005-08-03 | 浜松ホトニクス株式会社 | 半導体装置 |
US7230247B2 (en) * | 2002-03-08 | 2007-06-12 | Hamamatsu Photonics K.K. | Detector |
JP2005346769A (ja) * | 2004-05-31 | 2005-12-15 | Toshiba Corp | 光記録媒体及び情報記録再生装置 |
-
2003
- 2003-07-29 JP JP2003282162A patent/JP4499385B2/ja not_active Expired - Fee Related
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2004
- 2004-07-22 WO PCT/JP2004/010411 patent/WO2005011004A1/ja active Application Filing
- 2004-07-22 DE DE602004019654T patent/DE602004019654D1/de active Active
- 2004-07-22 CN CNB2004800217431A patent/CN100502058C/zh not_active Expired - Fee Related
- 2004-07-22 EP EP04770875A patent/EP1653520B1/en not_active Expired - Fee Related
- 2004-07-22 KR KR1020057020827A patent/KR20060061294A/ko not_active Application Discontinuation
- 2004-07-22 US US10/565,945 patent/US7768086B2/en not_active Expired - Fee Related
- 2004-07-28 TW TW093122535A patent/TW200511569A/zh unknown
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Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02185070A (ja) * | 1989-01-12 | 1990-07-19 | Matsushita Electric Ind Co Ltd | 受光素子とその製造方法 |
JPH05135261A (ja) * | 1991-11-12 | 1993-06-01 | Matsushita Refrig Co Ltd | 自動販売機 |
JPH08111542A (ja) * | 1994-08-17 | 1996-04-30 | Seiko Instr Inc | アバランシェ・フォト・ダイオード及びその製造方法 |
JPH08293476A (ja) * | 1995-04-21 | 1996-11-05 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体ウエハならびにフォトマスク |
WO1996036999A1 (de) * | 1995-05-19 | 1996-11-21 | Dr. Johannes Heidenhain Gmbh | Strahlungsempfindliches detektorelement und verfahren zur herstellung desselben |
JP2000502215A (ja) * | 1995-12-21 | 2000-02-22 | ドクトル ヨハネス ハイデンハイン ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光電センサ素子 |
JP2000299489A (ja) * | 1999-04-15 | 2000-10-24 | Hamamatsu Photonics Kk | 光電変換素子及び光受信器 |
JP2002319669A (ja) * | 2001-04-23 | 2002-10-31 | Hamamatsu Photonics Kk | 裏面入射型ホトダイオード及びホトダイオードアレイ |
WO2004019411A1 (ja) * | 2002-08-09 | 2004-03-04 | Hamamatsu Photonics K.K. | フォトダイオードアレイ、その製造方法、及び放射線検出器 |
WO2005008788A1 (ja) * | 2003-07-23 | 2005-01-27 | Hamamatsu Photonics K.K. | 裏面入射型光検出素子 |
Also Published As
Publication number | Publication date |
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IL173374A (en) | 2010-11-30 |
EP1653520B1 (en) | 2009-02-25 |
CN100502058C (zh) | 2009-06-17 |
IL173374A0 (en) | 2006-06-11 |
CN1830094A (zh) | 2006-09-06 |
WO2005011004A1 (ja) | 2005-02-03 |
US20080073740A1 (en) | 2008-03-27 |
TW200511569A (en) | 2005-03-16 |
US7768086B2 (en) | 2010-08-03 |
KR20060061294A (ko) | 2006-06-07 |
DE602004019654D1 (de) | 2009-04-09 |
EP1653520A1 (en) | 2006-05-03 |
EP1653520A4 (en) | 2007-03-21 |
JP2005051078A (ja) | 2005-02-24 |
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