DE602004019654D1 - Rückseiten-beleuchteter fotodetektor - Google Patents

Rückseiten-beleuchteter fotodetektor

Info

Publication number
DE602004019654D1
DE602004019654D1 DE602004019654T DE602004019654T DE602004019654D1 DE 602004019654 D1 DE602004019654 D1 DE 602004019654D1 DE 602004019654 T DE602004019654 T DE 602004019654T DE 602004019654 T DE602004019654 T DE 602004019654T DE 602004019654 D1 DE602004019654 D1 DE 602004019654D1
Authority
DE
Germany
Prior art keywords
photo detector
back lit
lit photo
detector
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004019654T
Other languages
English (en)
Inventor
Katsumi Shibayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE602004019654D1 publication Critical patent/DE602004019654D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE602004019654T 2003-07-29 2004-07-22 Rückseiten-beleuchteter fotodetektor Active DE602004019654D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003282162A JP4499385B2 (ja) 2003-07-29 2003-07-29 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法
PCT/JP2004/010411 WO2005011004A1 (ja) 2003-07-29 2004-07-22 裏面入射型光検出素子

Publications (1)

Publication Number Publication Date
DE602004019654D1 true DE602004019654D1 (de) 2009-04-09

Family

ID=34100997

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004019654T Active DE602004019654D1 (de) 2003-07-29 2004-07-22 Rückseiten-beleuchteter fotodetektor

Country Status (9)

Country Link
US (1) US7768086B2 (de)
EP (1) EP1653520B1 (de)
JP (1) JP4499385B2 (de)
KR (1) KR20060061294A (de)
CN (1) CN100502058C (de)
DE (1) DE602004019654D1 (de)
IL (1) IL173374A (de)
TW (1) TW200511569A (de)
WO (1) WO2005011004A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4641820B2 (ja) 2005-02-17 2011-03-02 三洋電機株式会社 半導体装置の製造方法
US20070236591A1 (en) * 2006-04-11 2007-10-11 Tam Samuel W Method for mounting protective covers over image capture devices and devices manufactured thereby
JP4200463B2 (ja) * 2006-07-07 2008-12-24 Ｔｄｋ株式会社 受光素子及びそれを用いた光ヘッド並びにそれを用いた光記録再生装置
EP1879230A1 (de) * 2006-07-10 2008-01-16 Sanyo Electric Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren dazu
FR2906079B1 (fr) 2006-09-19 2009-02-20 E2V Semiconductors Soc Par Act Capteur d'image en couleur a colorimetrie amelioree
JP4693827B2 (ja) * 2007-09-20 2011-06-01 株式会社東芝 半導体装置とその製造方法
TW200937642A (en) 2007-12-19 2009-09-01 Heptagon Oy Wafer stack, integrated optical device and method for fabricating the same
EP2075840B1 (de) 2007-12-28 2014-08-27 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Scheiden eines Wafers mit darauf geformten Halbleiterelementen und dazugehörendes Bauteil
US20100116970A1 (en) * 2008-11-12 2010-05-13 Wen-Long Chou Photo detection device
DE102011102007B4 (de) * 2011-05-19 2012-12-27 Austriamicrosystems Ag Fotodiode und Herstellungsverfahren
KR101310742B1 (ko) * 2011-11-21 2013-09-25 주식회사 지멤스 배면 조사형 이미지 센서 및 그 제조방법
JP6065470B2 (ja) * 2012-08-31 2017-01-25 セイコーエプソン株式会社 撮像装置、検査装置、及び電子デバイスの製造方法
JP6065508B2 (ja) * 2012-10-05 2017-01-25 セイコーエプソン株式会社 撮像装置の製造方法
JP6006602B2 (ja) * 2012-10-09 2016-10-12 旭化成エレクトロニクス株式会社 量子型赤外線センサ及びその製造方法
CN102956739B (zh) * 2012-10-17 2015-06-10 黄秋 微光电感单元及其背读式半导体光电倍增管及其组件
JP2014186006A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 赤外線撮像装置および赤外線撮像モジュール
JP2017152252A (ja) * 2016-02-25 2017-08-31 株式会社ジャパンディスプレイ 表示装置
US9859311B1 (en) 2016-11-28 2018-01-02 Omnivision Technologies, Inc. Storage gate protection
TWI672806B (zh) * 2018-06-22 2019-09-21 晶相光電股份有限公司 全域快門互補式金屬氧化物半導體影像感測器及其形成方法
JP7389029B2 (ja) * 2018-06-29 2023-11-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器、および固体撮像装置の製造方法
JP6609674B1 (ja) * 2018-07-11 2019-11-20 浜松ホトニクス株式会社 光検出装置及び光検出装置の製造方法
DE102020115899A1 (de) 2019-09-30 2021-04-01 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zum bilden eines bildsensors
US11393866B2 (en) * 2019-09-30 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming an image sensor

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098630A (en) * 1985-03-08 1992-03-24 Olympus Optical Co., Ltd. Method of molding a solid state image pickup device
NL8700370A (nl) 1987-02-16 1988-09-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
JP2650389B2 (ja) * 1989-01-12 1997-09-03 松下電器産業株式会社 受光素子とその製造方法
FR2656738B1 (fr) * 1989-12-29 1995-03-17 Telemecanique Procede pour fabriquer un dispositif semiconducteur, dispositif et composant semiconducteur obtenus par le procede.
DE4102285A1 (de) * 1991-01-26 1992-08-06 Messerschmitt Boelkow Blohm Verfahren zur herstellung einer membrandiode
JPH05135261A (ja) * 1991-11-12 1993-06-01 Matsushita Refrig Co Ltd 自動販売機
JPH05136261A (ja) * 1991-11-15 1993-06-01 Kawasaki Steel Corp 半導体チツプ及びウエハのダイシング方法
JP2950714B2 (ja) * 1993-09-28 1999-09-20 シャープ株式会社 固体撮像装置およびその製造方法
JP3091903B2 (ja) * 1994-08-17 2000-09-25 セイコーインスツルメンツ株式会社 アバランシェ・フォト・ダイオード及びその製造方法
JPH08293476A (ja) * 1995-04-21 1996-11-05 Hitachi Ltd 半導体集積回路装置の製造方法および半導体ウエハならびにフォトマスク
WO1996036999A1 (de) * 1995-05-19 1996-11-21 Dr. Johannes Heidenhain Gmbh Strahlungsempfindliches detektorelement und verfahren zur herstellung desselben
DE19549228A1 (de) 1995-12-21 1997-06-26 Heidenhain Gmbh Dr Johannes Optoelektronisches Sensor-Bauelement
JPH09219421A (ja) 1996-02-14 1997-08-19 Hitachi Ltd 半導体電子部品の製造方法およびウエハ
JP3678526B2 (ja) 1997-02-10 2005-08-03 浜松ホトニクス株式会社 半導体装置
JP2000299489A (ja) * 1999-04-15 2000-10-24 Hamamatsu Photonics Kk 光電変換素子及び光受信器
JP2002319669A (ja) * 2001-04-23 2002-10-31 Hamamatsu Photonics Kk 裏面入射型ホトダイオード及びホトダイオードアレイ
US7230247B2 (en) * 2002-03-08 2007-06-12 Hamamatsu Photonics K.K. Detector
EP1835539B1 (de) * 2002-08-09 2012-10-31 Hamamatsu Photonics K.K. Photodiodenarray sowie Herstellungsverfahren dafür
JP2005045073A (ja) * 2003-07-23 2005-02-17 Hamamatsu Photonics Kk 裏面入射型光検出素子
JP2005346769A (ja) * 2004-05-31 2005-12-15 Toshiba Corp 光記録媒体及び情報記録再生装置

Also Published As

Publication number Publication date
EP1653520A4 (de) 2007-03-21
US7768086B2 (en) 2010-08-03
WO2005011004A1 (ja) 2005-02-03
US20080073740A1 (en) 2008-03-27
IL173374A0 (en) 2006-06-11
JP2005051078A (ja) 2005-02-24
CN1830094A (zh) 2006-09-06
EP1653520B1 (de) 2009-02-25
JP4499385B2 (ja) 2010-07-07
TW200511569A (en) 2005-03-16
CN100502058C (zh) 2009-06-17
IL173374A (en) 2010-11-30
KR20060061294A (ko) 2006-06-07
EP1653520A1 (de) 2006-05-03

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Legal Events

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8364 No opposition during term of opposition