TW200511569A - Back incidence type light detection component - Google Patents

Back incidence type light detection component

Info

Publication number
TW200511569A
TW200511569A TW093122535A TW93122535A TW200511569A TW 200511569 A TW200511569 A TW 200511569A TW 093122535 A TW093122535 A TW 093122535A TW 93122535 A TW93122535 A TW 93122535A TW 200511569 A TW200511569 A TW 200511569A
Authority
TW
Taiwan
Prior art keywords
type
semiconductor substrate
detection component
light detection
type light
Prior art date
Application number
TW093122535A
Other languages
English (en)
Inventor
Katsumi Shibayama
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of TW200511569A publication Critical patent/TW200511569A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW093122535A 2003-07-29 2004-07-28 Back incidence type light detection component TW200511569A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003282162A JP4499385B2 (ja) 2003-07-29 2003-07-29 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法

Publications (1)

Publication Number Publication Date
TW200511569A true TW200511569A (en) 2005-03-16

Family

ID=34100997

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093122535A TW200511569A (en) 2003-07-29 2004-07-28 Back incidence type light detection component

Country Status (9)

Country Link
US (1) US7768086B2 (zh)
EP (1) EP1653520B1 (zh)
JP (1) JP4499385B2 (zh)
KR (1) KR20060061294A (zh)
CN (1) CN100502058C (zh)
DE (1) DE602004019654D1 (zh)
IL (1) IL173374A (zh)
TW (1) TW200511569A (zh)
WO (1) WO2005011004A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8999818B2 (en) 2007-12-28 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
TWI672806B (zh) * 2018-06-22 2019-09-21 晶相光電股份有限公司 全域快門互補式金屬氧化物半導體影像感測器及其形成方法

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JP4641820B2 (ja) 2005-02-17 2011-03-02 三洋電機株式会社 半導体装置の製造方法
US20070236591A1 (en) * 2006-04-11 2007-10-11 Tam Samuel W Method for mounting protective covers over image capture devices and devices manufactured thereby
JP4200463B2 (ja) * 2006-07-07 2008-12-24 Ｔｄｋ株式会社 受光素子及びそれを用いた光ヘッド並びにそれを用いた光記録再生装置
EP1879230A1 (en) * 2006-07-10 2008-01-16 Sanyo Electric Co., Ltd. Semiconductor device and manufacturing method of the same
FR2906079B1 (fr) 2006-09-19 2009-02-20 E2V Semiconductors Soc Par Act Capteur d'image en couleur a colorimetrie amelioree
JP4693827B2 (ja) * 2007-09-20 2011-06-01 株式会社東芝 半導体装置とその製造方法
TW200937642A (en) 2007-12-19 2009-09-01 Heptagon Oy Wafer stack, integrated optical device and method for fabricating the same
US20100116970A1 (en) * 2008-11-12 2010-05-13 Wen-Long Chou Photo detection device
DE102011102007B4 (de) * 2011-05-19 2012-12-27 Austriamicrosystems Ag Fotodiode und Herstellungsverfahren
KR101310742B1 (ko) * 2011-11-21 2013-09-25 주식회사 지멤스 배면 조사형 이미지 센서 및 그 제조방법
JP6065470B2 (ja) * 2012-08-31 2017-01-25 セイコーエプソン株式会社 撮像装置、検査装置、及び電子デバイスの製造方法
JP6065508B2 (ja) * 2012-10-05 2017-01-25 セイコーエプソン株式会社 撮像装置の製造方法
JP6006602B2 (ja) * 2012-10-09 2016-10-12 旭化成エレクトロニクス株式会社 量子型赤外線センサ及びその製造方法
CN102956739B (zh) * 2012-10-17 2015-06-10 黄秋 微光电感单元及其背读式半导体光电倍增管及其组件
JP2014186006A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 赤外線撮像装置および赤外線撮像モジュール
JP2017152252A (ja) * 2016-02-25 2017-08-31 株式会社ジャパンディスプレイ 表示装置
US9859311B1 (en) 2016-11-28 2018-01-02 Omnivision Technologies, Inc. Storage gate protection
JP7389029B2 (ja) * 2018-06-29 2023-11-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器、および固体撮像装置の製造方法
JP6609674B1 (ja) * 2018-07-11 2019-11-20 浜松ホトニクス株式会社 光検出装置及び光検出装置の製造方法
DE102020115899A1 (de) 2019-09-30 2021-04-01 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zum bilden eines bildsensors
US11393866B2 (en) * 2019-09-30 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming an image sensor

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JP2650389B2 (ja) * 1989-01-12 1997-09-03 松下電器産業株式会社 受光素子とその製造方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8999818B2 (en) 2007-12-28 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
TWI496276B (zh) * 2007-12-28 2015-08-11 Semiconductor Energy Lab 半導體裝置和半導體裝置的製造方法
TWI672806B (zh) * 2018-06-22 2019-09-21 晶相光電股份有限公司 全域快門互補式金屬氧化物半導體影像感測器及其形成方法
US10777593B2 (en) 2018-06-22 2020-09-15 Silicon Optronics, Inc. Global shutter CMOS image sensor and method for forming the same

Also Published As

Publication number Publication date
EP1653520A4 (en) 2007-03-21
US7768086B2 (en) 2010-08-03
WO2005011004A1 (ja) 2005-02-03
US20080073740A1 (en) 2008-03-27
IL173374A0 (en) 2006-06-11
JP2005051078A (ja) 2005-02-24
CN1830094A (zh) 2006-09-06
EP1653520B1 (en) 2009-02-25
JP4499385B2 (ja) 2010-07-07
CN100502058C (zh) 2009-06-17
IL173374A (en) 2010-11-30
KR20060061294A (ko) 2006-06-07
DE602004019654D1 (de) 2009-04-09
EP1653520A1 (en) 2006-05-03

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