KR860004479A - 반도체 광검출기 장치 - Google Patents
반도체 광검출기 장치Info
- Publication number
- KR860004479A KR860004479A KR1019850008542A KR850008542A KR860004479A KR 860004479 A KR860004479 A KR 860004479A KR 1019850008542 A KR1019850008542 A KR 1019850008542A KR 850008542 A KR850008542 A KR 850008542A KR 860004479 A KR860004479 A KR 860004479A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor photodetector
- photodetector device
- semiconductor
- photodetector
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59241978A JPS61120466A (ja) | 1984-11-16 | 1984-11-16 | 半導体光検出素子 |
JP59-241978 | 1984-11-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860004479A true KR860004479A (ko) | 1986-06-23 |
KR890004476B1 KR890004476B1 (ko) | 1989-11-04 |
Family
ID=17082418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850008542A KR890004476B1 (ko) | 1984-11-16 | 1985-11-15 | 반도체 광검출기 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4841349A (ko) |
EP (1) | EP0182610B1 (ko) |
JP (1) | JPS61120466A (ko) |
KR (1) | KR890004476B1 (ko) |
DE (1) | DE3575498D1 (ko) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2857397B2 (ja) * | 1988-08-05 | 1999-02-17 | シャープ株式会社 | 光駆動型半導体装置の製造方法 |
US5021849A (en) * | 1989-10-30 | 1991-06-04 | Motorola, Inc. | Compact SRAM cell with polycrystalline silicon diode load |
US5241575A (en) * | 1989-12-21 | 1993-08-31 | Minolta Camera Kabushiki Kaisha | Solid-state image sensing device providing a logarithmically proportional output signal |
IL96623A0 (en) * | 1989-12-26 | 1991-09-16 | Gen Electric | Low capacitance,large area semiconductor photodetector and photodetector system |
US5151387A (en) | 1990-04-30 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Polycrystalline silicon contact structure |
US5117113A (en) * | 1990-07-06 | 1992-05-26 | Thompson And Nielson Electronics Ltd. | Direct reading dosimeter |
US6013565A (en) * | 1991-12-16 | 2000-01-11 | Penn State Research Foundation | High conductivity thin film material for semiconductor device |
JPH05219443A (ja) * | 1992-02-05 | 1993-08-27 | Minolta Camera Co Ltd | 固体撮像装置 |
US5557114A (en) * | 1995-01-12 | 1996-09-17 | International Business Machines Corporation | Optical fet |
EP0837418A3 (en) * | 1996-10-18 | 2006-03-29 | Kabushiki Kaisha Toshiba | Method and apparatus for generating information input using reflected light image of target object |
US6936849B1 (en) | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
US7154153B1 (en) | 1997-07-29 | 2006-12-26 | Micron Technology, Inc. | Memory device |
US6746893B1 (en) | 1997-07-29 | 2004-06-08 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US6031263A (en) | 1997-07-29 | 2000-02-29 | Micron Technology, Inc. | DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate |
US6965123B1 (en) | 1997-07-29 | 2005-11-15 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US6794255B1 (en) | 1997-07-29 | 2004-09-21 | Micron Technology, Inc. | Carburized silicon gate insulators for integrated circuits |
US7196929B1 (en) * | 1997-07-29 | 2007-03-27 | Micron Technology Inc | Method for operating a memory device having an amorphous silicon carbide gate insulator |
US6046466A (en) * | 1997-09-12 | 2000-04-04 | Nikon Corporation | Solid-state imaging device |
JPH11274466A (ja) | 1998-03-20 | 1999-10-08 | Nikon Corp | 固体撮像装置及びこれを備えたカメラ |
US6545333B1 (en) | 2001-04-25 | 2003-04-08 | International Business Machines Corporation | Light controlled silicon on insulator device |
US6936895B2 (en) * | 2003-10-09 | 2005-08-30 | Chartered Semiconductor Manufacturing Ltd. | ESD protection device |
US8477125B2 (en) * | 2005-12-21 | 2013-07-02 | Samsung Display Co., Ltd. | Photo sensor and organic light-emitting display using the same |
US8476709B2 (en) * | 2006-08-24 | 2013-07-02 | Infineon Technologies Ag | ESD protection device and method |
JP2008288499A (ja) * | 2007-05-21 | 2008-11-27 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5196963B2 (ja) * | 2007-11-09 | 2013-05-15 | 株式会社ジャパンディスプレイウェスト | 表示装置および表示制御方法ならびに電子機器 |
US9070784B2 (en) | 2011-07-22 | 2015-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate structure of a CMOS semiconductor device and method of forming the same |
CN109920895B (zh) * | 2019-03-12 | 2024-02-09 | 中国科学院微电子研究所 | 可控发光位置的二极管器件、制造方法、电压控制方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3207926A (en) * | 1962-07-06 | 1965-09-21 | Bell Telephone Labor Inc | Stabilized timing network |
GB1139170A (en) * | 1965-12-22 | 1969-01-08 | Mullard Ltd | Thin film transistors |
US3459944A (en) * | 1966-01-04 | 1969-08-05 | Ibm | Photosensitive insulated gate field effect transistor |
US3648258A (en) * | 1969-07-01 | 1972-03-07 | Sperry Rand Corp | Optical memory circuit |
US4057819A (en) * | 1976-08-05 | 1977-11-08 | Alan Ernest Owen | Semiconductor device |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
JPS5850030B2 (ja) * | 1979-03-08 | 1983-11-08 | 日本放送協会 | 光電変換装置およびそれを用いた固体撮像板 |
JPS55156371A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Non-volatile semiconductor memory device |
US4236831A (en) * | 1979-07-27 | 1980-12-02 | Honeywell Inc. | Semiconductor apparatus |
JPS5737888A (en) * | 1980-08-19 | 1982-03-02 | Mitsubishi Electric Corp | Photo detector |
US4419586A (en) * | 1981-08-27 | 1983-12-06 | Motorola, Inc. | Solid-state relay and regulator |
JPS5922360A (ja) * | 1982-07-28 | 1984-02-04 | Matsushita Electric Works Ltd | 光入力モス型トランジスタ |
US4564770A (en) * | 1983-03-29 | 1986-01-14 | Rca Corporation | Solid state relay with fast turnoff |
-
1984
- 1984-11-16 JP JP59241978A patent/JPS61120466A/ja active Pending
-
1985
- 1985-11-14 DE DE8585308283T patent/DE3575498D1/de not_active Expired - Fee Related
- 1985-11-14 EP EP85308283A patent/EP0182610B1/en not_active Expired - Lifetime
- 1985-11-15 KR KR1019850008542A patent/KR890004476B1/ko not_active IP Right Cessation
-
1987
- 1987-10-28 US US07/113,324 patent/US4841349A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR890004476B1 (ko) | 1989-11-04 |
EP0182610A2 (en) | 1986-05-28 |
US4841349A (en) | 1989-06-20 |
EP0182610B1 (en) | 1990-01-17 |
DE3575498D1 (de) | 1990-02-22 |
EP0182610A3 (en) | 1986-09-17 |
JPS61120466A (ja) | 1986-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19921006 Year of fee payment: 4 |
|
LAPS | Lapse due to unpaid annual fee |