JPS5712543A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5712543A
JPS5712543A JP8664380A JP8664380A JPS5712543A JP S5712543 A JPS5712543 A JP S5712543A JP 8664380 A JP8664380 A JP 8664380A JP 8664380 A JP8664380 A JP 8664380A JP S5712543 A JPS5712543 A JP S5712543A
Authority
JP
Japan
Prior art keywords
metal
wire
cost
coating
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8664380A
Other languages
Japanese (ja)
Inventor
Hisashi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP8664380A priority Critical patent/JPS5712543A/en
Publication of JPS5712543A publication Critical patent/JPS5712543A/en
Pending legal-status Critical Current

Links

Classifications

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To decrease the cost of a wire by using the wire manufactured by coating the surface of nonpureprecious metal with anticorrosive metal. CONSTITUTION:The internal metal occupies the greater part of the wire, and Al, Fe, Cu, a FeNi alloy, etc. are used. As the metal coating the surface, metal having corrosion resistance against moisture, salt, acid and alkai is used, its amount to be used is extremely smaller than the internal metal, and Pt, Au, Ag, Sn, Ni..., etc. are employed. Even when the precious metal, such as Pt, Au, Ag, etc. is used, cost can be decreased largely because its amount to be used is slight.
JP8664380A 1980-06-27 1980-06-27 Semiconductor device Pending JPS5712543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8664380A JPS5712543A (en) 1980-06-27 1980-06-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8664380A JPS5712543A (en) 1980-06-27 1980-06-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5712543A true JPS5712543A (en) 1982-01-22

Family

ID=13892702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8664380A Pending JPS5712543A (en) 1980-06-27 1980-06-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5712543A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155161A (en) * 1983-02-23 1984-09-04 Daiichi Denko Kk Wire for bonding of semiconductor element
JPS59181040A (en) * 1983-03-30 1984-10-15 Toshiba Corp Manufacture of semiconductor device
JPS60186069A (en) * 1983-12-09 1985-09-21 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device
JPS6133440U (en) * 1984-07-30 1986-02-28 関西日本電気株式会社 bonding wire
JPS6297360A (en) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
WO2011013527A1 (en) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
JP2014179541A (en) * 2013-03-15 2014-09-25 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
JP2016195292A (en) * 2016-08-25 2016-11-17 シャープ株式会社 Semiconductor device and method of manufacturing the same
CN113161316A (en) * 2020-01-07 2021-07-23 铠侠股份有限公司 Semiconductor device with a plurality of semiconductor chips

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155161A (en) * 1983-02-23 1984-09-04 Daiichi Denko Kk Wire for bonding of semiconductor element
JPH0213814B2 (en) * 1983-02-23 1990-04-05 Daiichi Denko Kk
JPS59181040A (en) * 1983-03-30 1984-10-15 Toshiba Corp Manufacture of semiconductor device
JPS60186069A (en) * 1983-12-09 1985-09-21 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device
JPS6133440U (en) * 1984-07-30 1986-02-28 関西日本電気株式会社 bonding wire
JPS6297360A (en) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US8742258B2 (en) 2009-07-30 2014-06-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor
KR20120035093A (en) 2009-07-30 2012-04-13 가부시키가이샤 닛데쓰 마이크로 메탈 Bonding wire for semiconductor
WO2011013527A1 (en) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
JP2014179541A (en) * 2013-03-15 2014-09-25 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
EP2779232A3 (en) * 2013-03-15 2014-12-03 Renesas Electronics Corporation Semiconductor device with a chip bonded to a lead frame with a sintered Ag layer, wherein a resin fillet covers the sintered Ag layer and a part of a side surface of the chip and wherein chip electrodes are bonded to leads, as well as method of manufacturing the same
JP2016195292A (en) * 2016-08-25 2016-11-17 シャープ株式会社 Semiconductor device and method of manufacturing the same
CN113161316A (en) * 2020-01-07 2021-07-23 铠侠股份有限公司 Semiconductor device with a plurality of semiconductor chips
JP2021111648A (en) * 2020-01-07 2021-08-02 東芝デバイス＆ストレージ株式会社 Semiconductor device
US11749634B2 (en) 2020-01-07 2023-09-05 Kioxia Corporation Semiconductor device and wire bonding method

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