JPS5516429A - Electrode for ga1-x a xas - Google Patents

Electrode for ga1-x a xas

Info

Publication number
JPS5516429A
JPS5516429A JP8902578A JP8902578A JPS5516429A JP S5516429 A JPS5516429 A JP S5516429A JP 8902578 A JP8902578 A JP 8902578A JP 8902578 A JP8902578 A JP 8902578A JP S5516429 A JPS5516429 A JP S5516429A
Authority
JP
Japan
Prior art keywords
layer
ohmic
metal layer
electrode
xas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8902578A
Other languages
Japanese (ja)
Inventor
Shohei Koshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP8902578A priority Critical patent/JPS5516429A/en
Publication of JPS5516429A publication Critical patent/JPS5516429A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To provide electrodes excellent in an ohmic property as well as in a wire bonding property by forming electrodes for Ga1-x AlxAs on Ga1-x Alx As in the order of the ohmic layer, Ti layer and metal layer.
CONSTITUTION: To form an ohmic layer 3 on Ga1-x Alx As. Next, to form a Ti layer on the ohmic layer. Next, to form a metal layer 5 on the Ti layer. As material of this metal layer, Au, Ag, Sn etc. of easy bonding and of low resistance will be used. Next, the electrode formed in this way will be treated by differential function at 400-500°C in a reducing atmosphere.
COPYRIGHT: (C)1980,JPO&Japio
JP8902578A 1978-07-21 1978-07-21 Electrode for ga1-x a xas Pending JPS5516429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8902578A JPS5516429A (en) 1978-07-21 1978-07-21 Electrode for ga1-x a xas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8902578A JPS5516429A (en) 1978-07-21 1978-07-21 Electrode for ga1-x a xas

Publications (1)

Publication Number Publication Date
JPS5516429A true JPS5516429A (en) 1980-02-05

Family

ID=13959363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8902578A Pending JPS5516429A (en) 1978-07-21 1978-07-21 Electrode for ga1-x a xas

Country Status (1)

Country Link
JP (1) JPS5516429A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61201464A (en) * 1985-03-04 1986-09-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device with ohmic electrode
US4613890A (en) * 1983-05-21 1986-09-23 Telefunken Electronic Gmbh Alloyed contact for n-conducting GaAlAs-semi-conductor material
EP0386775A1 (en) * 1989-03-10 1990-09-12 Sumitomo Electric Industries, Ltd. Electrode structure for III-V compound semiconductor element and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613890A (en) * 1983-05-21 1986-09-23 Telefunken Electronic Gmbh Alloyed contact for n-conducting GaAlAs-semi-conductor material
JPS61201464A (en) * 1985-03-04 1986-09-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device with ohmic electrode
EP0386775A1 (en) * 1989-03-10 1990-09-12 Sumitomo Electric Industries, Ltd. Electrode structure for III-V compound semiconductor element and method of manufacturing the same

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