JPS5516429A - Electrode for ga1-x a xas - Google Patents
Electrode for ga1-x a xasInfo
- Publication number
- JPS5516429A JPS5516429A JP8902578A JP8902578A JPS5516429A JP S5516429 A JPS5516429 A JP S5516429A JP 8902578 A JP8902578 A JP 8902578A JP 8902578 A JP8902578 A JP 8902578A JP S5516429 A JPS5516429 A JP S5516429A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ohmic
- metal layer
- electrode
- xas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To provide electrodes excellent in an ohmic property as well as in a wire bonding property by forming electrodes for Ga1-x AlxAs on Ga1-x Alx As in the order of the ohmic layer, Ti layer and metal layer.
CONSTITUTION: To form an ohmic layer 3 on Ga1-x Alx As. Next, to form a Ti layer on the ohmic layer. Next, to form a metal layer 5 on the Ti layer. As material of this metal layer, Au, Ag, Sn etc. of easy bonding and of low resistance will be used. Next, the electrode formed in this way will be treated by differential function at 400-500°C in a reducing atmosphere.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8902578A JPS5516429A (en) | 1978-07-21 | 1978-07-21 | Electrode for ga1-x a xas |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8902578A JPS5516429A (en) | 1978-07-21 | 1978-07-21 | Electrode for ga1-x a xas |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5516429A true JPS5516429A (en) | 1980-02-05 |
Family
ID=13959363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8902578A Pending JPS5516429A (en) | 1978-07-21 | 1978-07-21 | Electrode for ga1-x a xas |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5516429A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61201464A (en) * | 1985-03-04 | 1986-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device with ohmic electrode |
US4613890A (en) * | 1983-05-21 | 1986-09-23 | Telefunken Electronic Gmbh | Alloyed contact for n-conducting GaAlAs-semi-conductor material |
EP0386775A1 (en) * | 1989-03-10 | 1990-09-12 | Sumitomo Electric Industries, Ltd. | Electrode structure for III-V compound semiconductor element and method of manufacturing the same |
-
1978
- 1978-07-21 JP JP8902578A patent/JPS5516429A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4613890A (en) * | 1983-05-21 | 1986-09-23 | Telefunken Electronic Gmbh | Alloyed contact for n-conducting GaAlAs-semi-conductor material |
JPS61201464A (en) * | 1985-03-04 | 1986-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device with ohmic electrode |
EP0386775A1 (en) * | 1989-03-10 | 1990-09-12 | Sumitomo Electric Industries, Ltd. | Electrode structure for III-V compound semiconductor element and method of manufacturing the same |
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