JPS5690569A - Photoelectric transducer - Google Patents
Photoelectric transducerInfo
- Publication number
- JPS5690569A JPS5690569A JP16789879A JP16789879A JPS5690569A JP S5690569 A JPS5690569 A JP S5690569A JP 16789879 A JP16789879 A JP 16789879A JP 16789879 A JP16789879 A JP 16789879A JP S5690569 A JPS5690569 A JP S5690569A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- light
- si3n4
- reflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009413 insulation Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000035699 permeability Effects 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To make MIS or shotkey type electrode, decrease a membrane resistance and get a superior degree of light permeability degree by a method wherein a metal having a clear work function and a transparent electrode for preventing a reflection are overlapped on a semiconductor or through an insulation film or a semi-insulation film. CONSTITUTION:Ohm type electrode 3 is attacned to a rear surface of Si layer 1 of a monocrystal or multicrystal etc., and Si3N4 or Si3N4-x (0<x<3) film 6 is arranged at a light radiating plane to mask such a thickness as allowing a tunnel current therein. Then, as a semitransparent electrode 2, Pt or Au is selected because it has a sufficiently high work function as compared to that of a semiconductor, hard to be oxidized and it may be coated. Further, on the top or upper surface is applied some oxide substance of In, Sn, Sb as a transparent electrode and in particular a film thickness of 1,500Angstrom may cause a sufficient effect for preventing a reflection of light. With this arrangement, the sheet resistance is decreased to about 1/10, a positive hole is sufficiently pulled out up to an opposing electrode, so that an efficiency of photoelectric transducer may become about twice of that of a conventional device, 10-15%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16789879A JPS5690569A (en) | 1979-12-24 | 1979-12-24 | Photoelectric transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16789879A JPS5690569A (en) | 1979-12-24 | 1979-12-24 | Photoelectric transducer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5690569A true JPS5690569A (en) | 1981-07-22 |
Family
ID=15858095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16789879A Pending JPS5690569A (en) | 1979-12-24 | 1979-12-24 | Photoelectric transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5690569A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0637085A1 (en) * | 1989-08-30 | 1995-02-01 | Texas Instruments Incorporated | Infrared detector and imager |
JP2009218394A (en) * | 2008-03-11 | 2009-09-24 | Seiko Epson Corp | Solar cell and its manufacturing method |
JP2014027001A (en) * | 2012-07-24 | 2014-02-06 | Toyota Gakuen | Photoelectric conversion element |
-
1979
- 1979-12-24 JP JP16789879A patent/JPS5690569A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0637085A1 (en) * | 1989-08-30 | 1995-02-01 | Texas Instruments Incorporated | Infrared detector and imager |
JP2009218394A (en) * | 2008-03-11 | 2009-09-24 | Seiko Epson Corp | Solar cell and its manufacturing method |
JP2014027001A (en) * | 2012-07-24 | 2014-02-06 | Toyota Gakuen | Photoelectric conversion element |
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