JPS5617031A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5617031A JPS5617031A JP9358879A JP9358879A JPS5617031A JP S5617031 A JPS5617031 A JP S5617031A JP 9358879 A JP9358879 A JP 9358879A JP 9358879 A JP9358879 A JP 9358879A JP S5617031 A JPS5617031 A JP S5617031A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- stable
- melting point
- low resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2924/01006—Carbon [C]
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- H01L2924/0105—Tin [Sn]
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- H01L2924/01073—Tantalum [Ta]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To obtain a semiconductor device which has large capacity and stable quality by eliminating an aluminum layer making direct contact with a semiconductor substrate, and employing a stable metallic layer forming easy low resistance contact with the substrate and being chemically stable. CONSTITUTION:An alloy layer 11 having high melting point and chemically stability such as W, Mo or Ta containing 5-50wt% of Ti is coated on an N-type Si substrate 1 to make low resistance contact with the substrate 1. Then, one of elements 12 in V and III groups of long periodic table such as Co, Ni, Rh and the like is superimposed thereon, an Ag layer 13 is further superimposed thereon to facilitate an easy adherence of the low melting point adhesive material therewith. A semiconductor substrate 1 provided with this adhesive structure 14 can be easily adhered to the support 2 through the low melting point adhesive material 8 at 160-230 deg.C. According to this configuration, the boundary face between the N layer 1 and the stable alloy layer 11 makes completely low resistance contact, accordingly nonresistive barrier does not occur at all. In addition, it can improve the adhering strength mechanically with the substrate 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9358879A JPS5617031A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9358879A JPS5617031A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5617031A true JPS5617031A (en) | 1981-02-18 |
Family
ID=14086441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9358879A Pending JPS5617031A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5617031A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222446A (en) * | 1985-07-22 | 1987-01-30 | Rohm Co Ltd | Forming method of ohmic electrode |
-
1979
- 1979-07-20 JP JP9358879A patent/JPS5617031A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222446A (en) * | 1985-07-22 | 1987-01-30 | Rohm Co Ltd | Forming method of ohmic electrode |
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