JPS5784166A - 3-5 group compound semiconductor device - Google Patents

3-5 group compound semiconductor device

Info

Publication number
JPS5784166A
JPS5784166A JP16052080A JP16052080A JPS5784166A JP S5784166 A JPS5784166 A JP S5784166A JP 16052080 A JP16052080 A JP 16052080A JP 16052080 A JP16052080 A JP 16052080A JP S5784166 A JPS5784166 A JP S5784166A
Authority
JP
Japan
Prior art keywords
alloy
compound semiconductor
group compound
high temperature
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16052080A
Other languages
Japanese (ja)
Other versions
JPS6230709B2 (en
Inventor
Kazumine Kurata
Takashi Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16052080A priority Critical patent/JPS5784166A/en
Publication of JPS5784166A publication Critical patent/JPS5784166A/en
Publication of JPS6230709B2 publication Critical patent/JPS6230709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To extend alloy temperature to the high temperature side by using an Au-Be alloy or an Au-Zn alloy containing Ag in a special weight ratio as a P type electrode of a III-V group compound semiconductor. CONSTITUTION:An Au-Be alloy or an Au-Zn alloy containing Ag of 10-95wt% is deposited on a P type GaP substrate, and is subjected to a heat treatment at temperature up to 650 deg.C, thereby alloying being promoted. Hereby, even when a heat treatment is performed at high temperature, a change of contact resistance is eliminated. Further by extending alloying temperature to the high temperature side, yield for manufacture can be raised.
JP16052080A 1980-11-13 1980-11-13 3-5 group compound semiconductor device Granted JPS5784166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16052080A JPS5784166A (en) 1980-11-13 1980-11-13 3-5 group compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16052080A JPS5784166A (en) 1980-11-13 1980-11-13 3-5 group compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5784166A true JPS5784166A (en) 1982-05-26
JPS6230709B2 JPS6230709B2 (en) 1987-07-03

Family

ID=15716727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16052080A Granted JPS5784166A (en) 1980-11-13 1980-11-13 3-5 group compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5784166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254610U (en) * 1985-09-26 1987-04-04
JPS6336413U (en) * 1986-08-22 1988-03-09
JPH0355377Y2 (en) * 1986-08-22 1991-12-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP

Also Published As

Publication number Publication date
JPS6230709B2 (en) 1987-07-03

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