JPS6297360A - Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device - Google Patents

Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device

Info

Publication number
JPS6297360A
JPS6297360A JP60237901A JP23790185A JPS6297360A JP S6297360 A JPS6297360 A JP S6297360A JP 60237901 A JP60237901 A JP 60237901A JP 23790185 A JP23790185 A JP 23790185A JP S6297360 A JPS6297360 A JP S6297360A
Authority
JP
Japan
Prior art keywords
wire
coated
high impurity
minute high
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60237901A
Other languages
Japanese (ja)
Inventor
Tamotsu Mori
保 森
Kiyoshi Furukawa
潔 古川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP60237901A priority Critical patent/JPS6297360A/en
Publication of JPS6297360A publication Critical patent/JPS6297360A/en
Pending legal-status Critical Current

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Classifications

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent oxidation of a surface, by forming a film of noble metal or corrosion resisting metal on the surface of minute high impurity copper wire having the specified value of impurity. CONSTITUTION:On the surface of minute high impurity copper wire having the impurity of 99.999% or higher, a film, which comprises noble metal such as alloy, whose main components are Au, Ag, Pt, Pd, and corrosion resisting metal, whose main components are Ni, Co, Cr, Ti, is formed. The surface property of the surface-coated minute high impurity copper is excellent. There is almost no time change. Even after bonding, stable performances can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置のボンディングワイヤとして用
いられ、近年、高価なＡｕ極細線に代って′ｉｔ６要が
増大しつつある安価な高純度鋼極細線の改良に関するも
のである。[Detailed Description of the Invention] [Industrial Application Field] This invention is an inexpensive high-purity bonding wire that is used as a bonding wire for semiconductor devices, and has recently become increasingly popular in place of expensive Au ultrafine wire. This paper relates to the improvement of ultra-fine steel wires.

［従来の技術］ 従来、一般に、半導体装置としてトランジスタやＩＣ１
さらにＬＳＩなどが知られているが、この中で、例えば
ＩＣの製造法の１つとして。[Prior Art] Conventionally, transistors and IC1s have generally been used as semiconductor devices.
Furthermore, LSI is known, and among these, for example, it is one of the manufacturing methods for IC.

（ａｔ　　まず、リードフレーム素材として板厚二０．
１〜０．３胃を有するＣｕ合金条材を用意し。(at First, the lead frame material has a plate thickness of 20 mm.
A Cu alloy strip having a diameter of 1 to 0.3 was prepared.

（ｂｌ　　上記リードフレーム素材より、エツチングま
たはプレス打抜き加工にて製造せんとするＩＣの形状に
適合したリードフレームを形成し。(bl) From the above lead frame material, form a lead frame that matches the shape of the IC to be manufactured by etching or press punching.

（Ｃ）　　ついで、上記リードフレームの所定個所に。(C) Next, attach it to the specified location on the lead frame.

高純度ＳｉあるいはＱｅなどの半導体チップを、Ａｇペ
ーストなどの導電性樹脂を用いて加熱接着するか。Should semiconductor chips made of high-purity Si or Qe be thermally bonded using conductive resin such as Ag paste?

あるいは予め上記半導体チップおよびリードフレームの
片面に形成しておいたＡｕｅ　Ａｇ　＃　Ｎｔ　＋　Ｃ
ｕｔあるいはこれらの合金で構成されためつき層を介し
てはんだ付け、あるいはＡｕろう付けし、（ｄｌ　　上
記半導体チップとと紀リードフレームとに渡って、ボン
ディングワイヤとしていずれも直径＝１５〜８０μｍを
有するＡｕ極細線または純度：９９．９９９１以上の高
純度銅極細線を用いて結線を施し、 （ｅｌ　　引続いて、上記の半導体チップ、結線、およ
び半導体チップが取付けられた部分のリードフレームを
、これらを保饅する目的でプラスチックで封止し。Alternatively, Aue Ag #Nt + C previously formed on one side of the semiconductor chip and lead frame.
Soldering or Au brazing is performed through a soldering layer made of ut or an alloy of these, and bonding wires are formed between the semiconductor chip and the lead frame, each having a diameter of 15 to 80 μm. Connections are made using Au ultrafine wires or high purity copper ultrafine wires with a purity of 99.9991 or higher. The rice cake is sealed in plastic for the purpose of preserving it.

げ）　最終的に、上記リードフレームにおける相互に連
なる部分を切除してＩＣを形成する。(G) Finally, the interconnected portions of the lead frame are cut out to form an IC.

以上軸）〜（ｆｌの主要工程からなる方法が知られてい
る。A method consisting of the main steps of (above axis) to (fl) is known.

上記のように、半導体装置の製造には、ボンディングワ
イヤとしてＡｕ極細線や高純度銅極細線が用いられてい
るが、近年、高価なＡｕ極細線に代って安価な高純度鋼
極細線が注目されるようになっている。As mentioned above, ultra-fine Au wires and ultra-fine high-purity copper wires are used as bonding wires in the manufacture of semiconductor devices, but in recent years, inexpensive ultra-fine high-purity steel wires have replaced the expensive ultra-fine Au wires. It's starting to get noticed.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

し力為し、上記の高純度鋼極細線においては、酸化し易
く１表面酸化が易ると、ボンディング性が著しく低下す
るようになるので、その管理には細心の注意をはら°う
必要があり、またボンディング後においても表面酸１ヒ
が避けられず、信頼性の面でも問題がある。However, the above-mentioned ultra-fine high-purity steel wires are easily oxidized, and if the surface oxidizes easily, the bonding properties will deteriorate significantly, so it is necessary to pay close attention to its management. Moreover, even after bonding, surface acidity is unavoidable, which poses a problem in terms of reliability.

〔問題点を解決するための手段〕[Means for solving problems]

そこで、本発明者等は、上述のような観点から、従来半
導体装置のポンディングワイヤとして用いられている高
純度銅極細線のもつ、上記のような問題点を解決すべく
研究を行なった結果、上記の９９．９１以上の純度を有
する直径：１５〜８０μｍの高純度銅極細線の表面に、
Ａｌｌ　、　Ａｇ　＋　Ｐｔ　、　Ｐｄ　＊あるいはこ
れらの成分を主成分とする合金などの貴金属、さらにＮ
ｉ＊　Ｃｏ　ｅ　Ｃｒ　ｅ　Ｔｉ　＊あるいはこれらの
成分を主成分とする耐食性金属で構成された被膜を、望
ましくは１００Ｘ〜１μｍの平均層厚で、例えば化学お
よび物理蒸着法や化学および電気めっき法、さらにクラ
ッド法などを用いて形成したものからなる表面被覆高純
度銅極細線は、前記の被膜によって表面酸化が著しく抑
制され、長期に亘って良好な表面性状を保持することか
ら、半導体装置のポンディングワイヤとして、より一段
とその実用化が容易になり、かつ信頼性を増すようにな
るという知見を得たのである。Therefore, from the above-mentioned viewpoint, the present inventors have conducted research to solve the above-mentioned problems with the high-purity copper ultrafine wires conventionally used as bonding wires for semiconductor devices. , on the surface of the high-purity copper ultrafine wire with a diameter of 15 to 80 μm having a purity of 99.91 or more,
Noble metals such as All, Ag + Pt, Pd * or alloys containing these components as main components, and N
A coating composed of i* Co e Cre Ti * or a corrosion-resistant metal containing these components as a main component is preferably applied with an average layer thickness of 100X to 1 μm, for example, by chemical and physical vapor deposition methods, chemical and electroplating methods, Furthermore, surface-coated high-purity copper ultrafine wires formed using a cladding method or the like can be used as pumps for semiconductor devices because the coating significantly suppresses surface oxidation and maintains good surface quality over a long period of time. They obtained the knowledge that it will be easier to put it into practical use as a cutting wire, and that it will be more reliable.

この発明は、上記知見にもとづいてなされたものであっ
て、９９．９９９４以上の純度を有する高純度銅極細線
の表面に、貴金属あるいは耐食性金属の被膜を形成して
なる半導体装置のボンディングワイヤ用表面被覆高純度
極細線に特徴を有するものである。The present invention has been made based on the above findings, and is for use in bonding wires for semiconductor devices, which are formed by forming a coating of a noble metal or a corrosion-resistant metal on the surface of a high-purity copper ultrafine wire having a purity of 99.9994 or higher. It is characterized by surface-coated high-purity ultra-fine wire.

〔実施例〕〔Example〕

つぎに、この発明の表面被覆高純度銅極細線を実権例に
より具体的に説明する。Next, the surface-coated high-purity copper extra-fine wire of the present invention will be specifically explained using a practical example.

９９．９９９５９６の純度を有する直径：２５μｍの高
純度銅極細線を用意し、この高純度鋼極細線の表面に、
通常の化学蒸着法を用い、それぞれ第１表に示される材
質の被膜を、０．１μｍの平均層厚で形成することによ
って本発明表面被覆高純度銅極細線（以下本発明被覆極
細線という）１−１０をそれぞれ製造した。A high-purity copper ultra-fine wire with a diameter of 25 μm and a purity of 99.999596 is prepared, and on the surface of this high-purity steel ultra-fine wire,
The surface-coated high-purity copper ultrafine wire of the present invention (hereinafter referred to as the coated ultrafine wire of the present invention) is formed by forming a coating of the materials shown in Table 1 with an average layer thickness of 0.1 μm using a normal chemical vapor deposition method. 1-10 were produced, respectively.

ついで、この結果得られた本発明被覆極細ａｉ〜１０．
並びに比較の目的で用意した上記の高純度鋼極細線につ
いて、破断荷重および伸びを測定すると共に、大気中に
１０日間放置後の表面性状を観察し、酸化の有無を調べ
た、これらの結果を第１表に示した。Next, the resulting inventive coating extra fine ai~10.
We also measured the breaking load and elongation of the above-mentioned high-purity steel ultra-fine wire prepared for comparison purposes, and observed the surface texture after being left in the atmosphere for 10 days to check for the presence or absence of oxidation. It is shown in Table 1.

〔発明の効果〕〔Effect of the invention〕

第１表に示される結果２７−ら明らかなように、本発明
被覆極細線１〜１０は、高純度鋼極細線と同等の特性を
有し、かつ高純度銅極細線では著しい表面酸化が見られ
るのに対して、その表面性状はきわめて良好で、はとん
ど変「ヒのないものである。As is clear from the results 27-1 shown in Table 1, coated ultra-fine wires 1 to 10 of the present invention have properties equivalent to those of high-purity steel ultra-fine wires, and significant surface oxidation is observed in high-purity copper ultra-fine wires. In contrast, its surface quality is extremely good, with virtually no blemishes.

Ｌ述のように、この発明の表面被覆高純度銅極ａ１腺は
、表面性状が良好で、経時的変化がほとんどないので、
半導体装置のボンディングワイヤとして比較的容易な管
理で実用に供することができ。As mentioned in L, the surface-coated high-purity copper electrode A1 gland of the present invention has good surface properties and hardly changes over time.
It can be put to practical use as a bonding wire for semiconductor devices with relatively easy management.

かつボンディング後も安定した性能を発揮するものであ
る。Moreover, it exhibits stable performance even after bonding.

Claims (1)

【特許請求の範囲】[Claims] ９９．９９９％以上の純度を有する高純度銅極細線の表
面に、貴金属あるいは耐食性金属の被膜を形成してなる
半導体装置のボンデイングワイヤ用表面被覆高純度銅極
細線。A surface-coated high-purity copper ultra-fine wire for a bonding wire of a semiconductor device, which is formed by forming a noble metal or corrosion-resistant metal coating on the surface of a high-purity copper ultra-fine wire having a purity of 99.999% or more.
JP60237901A 1985-10-24 1985-10-24 Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device Pending JPS6297360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60237901A JPS6297360A (en) 1985-10-24 1985-10-24 Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60237901A JPS6297360A (en) 1985-10-24 1985-10-24 Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device

Publications (1)

Publication Number Publication Date
JPS6297360A true JPS6297360A (en) 1987-05-06

Family

ID=17022106

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPS6297360A (en)

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US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
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WO2003036710A1 (en) * 2001-10-23 2003-05-01 Sumitomo Electric Wintec, Incorporated Bonding wire
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