JPS6297360A - Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device - Google Patents
Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor deviceInfo
- Publication number
- JPS6297360A JPS6297360A JP60237901A JP23790185A JPS6297360A JP S6297360 A JPS6297360 A JP S6297360A JP 60237901 A JP60237901 A JP 60237901A JP 23790185 A JP23790185 A JP 23790185A JP S6297360 A JPS6297360 A JP S6297360A
- Authority
- JP
- Japan
- Prior art keywords
- minute
- impurity
- coated
- copper wire
- whose
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052802 copper Inorganic materials 0.000 title abstract 4
- 239000010949 copper Substances 0.000 title abstract 4
- 239000004065 semiconductors Substances 0.000 title 1
- 238000005260 corrosion Methods 0.000 abstract 2
- 229910052751 metals Inorganic materials 0.000 abstract 2
- 239000002184 metals Substances 0.000 abstract 2
- 229910000510 noble metal Inorganic materials 0.000 abstract 2
- 229910000967 As alloys Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052803 cobalt Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 239000010950 nickel Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reactions Methods 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 239000010933 palladium Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000010932 platinum Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000010944 silver (metal) Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/732—Location after the connecting process
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- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Abstract
PURPOSE:To prevent oxidation of a surface, by forming a film of noble metal or corrosion resisting metal on the surface of minute high impurity copper wire having the specified value of impurity. CONSTITUTION:On the surface of minute high impurity copper wire having the impurity of 99.999% or higher, a film, which comprises noble metal such as alloy, whose main components are Au, Ag, Pt, Pd, and corrosion resisting metal, whose main components are Ni, Co, Cr, Ti, is formed. The surface property of the surface-coated minute high impurity copper is excellent. There is almost no time change. Even after bonding, stable performances can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60237901A JPS6297360A (en) | 1985-10-24 | 1985-10-24 | Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60237901A JPS6297360A (en) | 1985-10-24 | 1985-10-24 | Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device |
Publications (1)
Publication Number | Publication Date |
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JPS6297360A true JPS6297360A (en) | 1987-05-06 |
Family
ID=17022106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60237901A Pending JPS6297360A (en) | 1985-10-24 | 1985-10-24 | Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6297360A (en) |
Cited By (35)
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EP0792517A4 (en) * | 1994-11-15 | 1998-06-24 | Formfactor Inc | Electrical contact structures from flexible wire |
US6068917A (en) * | 1996-03-29 | 2000-05-30 | Ngk Insulators, Ltd. | Composite metallic wire and magnetic head using said composite metal wire |
US6336269B1 (en) * | 1993-11-16 | 2002-01-08 | Benjamin N. Eldridge | Method of fabricating an interconnection element |
FR2822288A1 (en) * | 2001-03-19 | 2002-09-20 | Astrium Gmbh | Cryogenic installation metallic superconductor having central conductor width between 1 and 0.01 mm and precious metal/precious metal alloy width between 1 micron and 1 nm |
WO2003036710A1 (en) * | 2001-10-23 | 2003-05-01 | Sumitomo Electric Wintec, Incorporated | Bonding wire |
JPWO2002023618A1 (en) * | 2000-09-18 | 2004-01-22 | 新日本製鐵株式会社 | Semiconductor bonding wire and method of manufacturing the same |
US6727579B1 (en) | 1994-11-16 | 2004-04-27 | Formfactor, Inc. | Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures |
US6778406B2 (en) | 1993-11-16 | 2004-08-17 | Formfactor, Inc. | Resilient contact structures for interconnecting electronic devices |
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JPS5712543A (en) * | 1980-06-27 | 1982-01-22 | Hitachi Ltd | Semiconductor device |
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