JPS6297360A - Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device - Google Patents

Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device

Info

Publication number
JPS6297360A
JPS6297360A JP60237901A JP23790185A JPS6297360A JP S6297360 A JPS6297360 A JP S6297360A JP 60237901 A JP60237901 A JP 60237901A JP 23790185 A JP23790185 A JP 23790185A JP S6297360 A JPS6297360 A JP S6297360A
Authority
JP
Japan
Prior art keywords
minute
impurity
coated
copper wire
whose
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60237901A
Other languages
Japanese (ja)
Inventor
Kiyoshi Furukawa
Tamotsu Mori
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP60237901A priority Critical patent/JPS6297360A/en
Publication of JPS6297360A publication Critical patent/JPS6297360A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/4557Plural coating layers
    • H01L2224/45572Two-layer stack coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45639Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45647Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655Nickel (Ni) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45657Cobalt (Co) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664Palladium (Pd) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45666Titanium (Ti) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45669Platinum (Pt) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45671Chromium (Cr) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01024Chromium [Cr]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012Semiconductor purity grades
    • H01L2924/012055N purity grades, i.e. 99.999%
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent

Abstract

PURPOSE:To prevent oxidation of a surface, by forming a film of noble metal or corrosion resisting metal on the surface of minute high impurity copper wire having the specified value of impurity. CONSTITUTION:On the surface of minute high impurity copper wire having the impurity of 99.999% or higher, a film, which comprises noble metal such as alloy, whose main components are Au, Ag, Pt, Pd, and corrosion resisting metal, whose main components are Ni, Co, Cr, Ti, is formed. The surface property of the surface-coated minute high impurity copper is excellent. There is almost no time change. Even after bonding, stable performances can be obtained.
JP60237901A 1985-10-24 1985-10-24 Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device Pending JPS6297360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60237901A JPS6297360A (en) 1985-10-24 1985-10-24 Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60237901A JPS6297360A (en) 1985-10-24 1985-10-24 Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device

Publications (1)

Publication Number Publication Date
JPS6297360A true JPS6297360A (en) 1987-05-06

Family

ID=17022106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60237901A Pending JPS6297360A (en) 1985-10-24 1985-10-24 Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device

Country Status (1)

Country Link
JP (1) JPS6297360A (en)

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6068917A (en) * 1996-03-29 2000-05-30 Ngk Insulators, Ltd. Composite metallic wire and magnetic head using said composite metal wire
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
FR2822288A1 (en) * 2001-03-19 2002-09-20 Astrium Gmbh Cryogenic installation metallic superconductor having central conductor width between 1 and 0.01 mm and precious metal/precious metal alloy width between 1 micron and 1 nm
WO2003036710A1 (en) * 2001-10-23 2003-05-01 Sumitomo Electric Wintec, Incorporated Bonding wire
JPWO2002023618A1 (en) * 2000-09-18 2004-01-22 新日本製鐵株式会社 Semiconductor bonding wire and method of manufacturing the same
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
WO2006073206A1 (en) * 2005-01-05 2006-07-13 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
JP2006216929A (en) * 2005-01-05 2006-08-17 Nippon Steel Corp Bonding wire for semiconductor device
JP2006520103A (en) * 2003-03-10 2006-08-31 フェアチャイルド・セミコンダクター・コーポレーション Flip chip coated metal stud bumps made of coated wire
JP2007502737A (en) * 2003-08-18 2007-02-15 コンチネンタル・テベス・アーゲー・ウント・コンパニー・オーハーゲー Cylinders especially for vehicle hydraulic brake systems
WO2009014168A1 (en) 2007-07-24 2009-01-29 Nippon Steel Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
WO2009093554A1 (en) 2008-01-25 2009-07-30 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
KR100926932B1 (en) * 2002-03-14 2009-11-17 페어차일드코리아반도체 주식회사 Semiconductor package having copper wire prevented from oxidation and manufacturing method thereof
JP2010062395A (en) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd Copper bonding wire
JP2010199528A (en) * 2009-01-27 2010-09-09 Tatsuta System Electronics Kk Bonding wire
WO2010109693A1 (en) * 2009-03-23 2010-09-30 田中電子工業株式会社 Coated copper wire for ball bonding
US7812358B2 (en) 2005-09-13 2010-10-12 Showa Denko K.K. Light-emitting device
WO2011013527A1 (en) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
JP4860004B1 (en) * 2011-02-28 2012-01-25 タツタ電線株式会社 Bonding wire and manufacturing method thereof
DE102010031993A1 (en) 2010-07-22 2012-01-26 W.C. Heraeus Gmbh Core-ribbon wire
JP5001455B1 (en) * 2011-11-21 2012-08-15 タツタ電線株式会社 Bonding wire and manufacturing method thereof
US8247911B2 (en) 2007-01-15 2012-08-21 Nippon Steel Materials Co., Ltd. Wire bonding structure and method for forming same
US8299356B2 (en) 2007-12-03 2012-10-30 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor devices
US8389860B2 (en) 2007-12-03 2013-03-05 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor devices
JP2013197531A (en) * 2012-03-22 2013-09-30 Sharp Corp Semiconductor device and manufacturing method of the same
CN103928418A (en) * 2013-01-11 2014-07-16 英飞凌科技股份有限公司 Bonding wire and method for producing a bond connection
US8815019B2 (en) 2009-03-17 2014-08-26 Nippon Steel & Sumikin Materials., Ltd. Bonding wire for semiconductor
US8836147B2 (en) 2010-10-01 2014-09-16 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of multilayer copper bonding wire
DE102014111895A1 (en) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallized electrical component
US9331049B2 (en) 2008-07-11 2016-05-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of bonding wire
KR101659254B1 (en) 2015-07-23 2016-09-22 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 Bonding wire for semiconductor device
JP2017117832A (en) * 2015-12-21 2017-06-29 トヨタ自動車株式会社 Copper wire joining method
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712543A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device
JPS60124959A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712543A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device
JPS60124959A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element

Cited By (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6068917A (en) * 1996-03-29 2000-05-30 Ngk Insulators, Ltd. Composite metallic wire and magnetic head using said composite metal wire
US6180890B1 (en) 1996-03-29 2001-01-30 Ngk Insulators, Ltd. Composite type magnetic head using composite metallic wire
JP2011124611A (en) * 2000-09-18 2011-06-23 Nippon Steel Materials Co Ltd Bonding wire for semiconductor
JPWO2002023618A1 (en) * 2000-09-18 2004-01-22 新日本製鐵株式会社 Semiconductor bonding wire and method of manufacturing the same
JP4868694B2 (en) * 2000-09-18 2012-02-01 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
JP2010166080A (en) * 2000-09-18 2010-07-29 Nippon Steel Materials Co Ltd Bonding wire for semiconductor and method of manufacturing the same
JP2013080960A (en) * 2000-09-18 2013-05-02 Nippon Steel Sumikin Materials Co Ltd Bonding wire for semiconductor and method of manufacturing the same
US7969021B2 (en) 2000-09-18 2011-06-28 Nippon Steel Corporation Bonding wire for semiconductor device and method for producing the same
JP2010166079A (en) * 2000-09-18 2010-07-29 Nippon Steel Materials Co Ltd Bonding wire for semiconductor and method of manufacturing the same
FR2822288A1 (en) * 2001-03-19 2002-09-20 Astrium Gmbh Cryogenic installation metallic superconductor having central conductor width between 1 and 0.01 mm and precious metal/precious metal alloy width between 1 micron and 1 nm
DE10113492B4 (en) * 2001-03-19 2005-12-01 Eads Astrium Gmbh Electrically conductive wire for applications in low temperature ranges
DE10113492A1 (en) * 2001-03-19 2002-10-02 Astrium Gmbh Metallic conductor and cryogenic device
WO2003036710A1 (en) * 2001-10-23 2003-05-01 Sumitomo Electric Wintec, Incorporated Bonding wire
KR100926932B1 (en) * 2002-03-14 2009-11-17 페어차일드코리아반도체 주식회사 Semiconductor package having copper wire prevented from oxidation and manufacturing method thereof
US7932171B2 (en) 2003-03-10 2011-04-26 Fairchild Semiconductor Corporation Dual metal stud bumping for flip chip applications
JP2006520103A (en) * 2003-03-10 2006-08-31 フェアチャイルド・セミコンダクター・コーポレーション Flip chip coated metal stud bumps made of coated wire
JP2007502737A (en) * 2003-08-18 2007-02-15 コンチネンタル・テベス・アーゲー・ウント・コンパニー・オーハーゲー Cylinders especially for vehicle hydraulic brake systems
JP4913594B2 (en) * 2003-08-18 2012-04-11 コンチネンタル・テベス・アーゲー・ウント・コンパニー・オーハーゲー Cylinders especially for vehicle hydraulic brake systems
JP2006216929A (en) * 2005-01-05 2006-08-17 Nippon Steel Corp Bonding wire for semiconductor device
US7820913B2 (en) 2005-01-05 2010-10-26 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
WO2006073206A1 (en) * 2005-01-05 2006-07-13 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
US7812358B2 (en) 2005-09-13 2010-10-12 Showa Denko K.K. Light-emitting device
US8247911B2 (en) 2007-01-15 2012-08-21 Nippon Steel Materials Co., Ltd. Wire bonding structure and method for forming same
EP2950335A2 (en) 2007-07-24 2015-12-02 Nippon Steel & Sumikin Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
US20120104613A1 (en) * 2007-07-24 2012-05-03 Nippon Micrometal Corporation Bonding wire for semiconductor device
WO2009014168A1 (en) 2007-07-24 2009-01-29 Nippon Steel Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
US8102061B2 (en) 2007-07-24 2012-01-24 Nippon Steel Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
EP2960931A2 (en) 2007-07-24 2015-12-30 Nippon Steel & Sumikin Materials Co., Ltd. Copper bond wire
US9112059B2 (en) 2007-07-24 2015-08-18 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
US8299356B2 (en) 2007-12-03 2012-10-30 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor devices
US8389860B2 (en) 2007-12-03 2013-03-05 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor devices
WO2009093554A1 (en) 2008-01-25 2009-07-30 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
US7952028B2 (en) 2008-01-25 2011-05-31 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
US9331049B2 (en) 2008-07-11 2016-05-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of bonding wire
JP2010062395A (en) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd Copper bonding wire
JP2010199528A (en) * 2009-01-27 2010-09-09 Tatsuta System Electronics Kk Bonding wire
US8815019B2 (en) 2009-03-17 2014-08-26 Nippon Steel & Sumikin Materials., Ltd. Bonding wire for semiconductor
WO2010109693A1 (en) * 2009-03-23 2010-09-30 田中電子工業株式会社 Coated copper wire for ball bonding
WO2011013527A1 (en) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
US8742258B2 (en) 2009-07-30 2014-06-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor
KR20120035093A (en) 2009-07-30 2012-04-13 가부시키가이샤 닛데쓰 마이크로 메탈 Bonding wire for semiconductor
EP3425665A1 (en) 2010-07-22 2019-01-09 Heraeus Deutschland GmbH & Co KG Method for the production of a bonding wire
DE102010031993B4 (en) * 2010-07-22 2015-03-12 Heraeus Materials Technology Gmbh & Co. Kg A method of manufacturing a bonding wire, bonding wire and assembly comprising such a bonding wire.
DE102010031993A1 (en) 2010-07-22 2012-01-26 W.C. Heraeus Gmbh Core-ribbon wire
US9236166B2 (en) 2010-07-22 2016-01-12 Heraeus Deutschland GmbH & Co. KG Core-jacket bonding wire
US8836147B2 (en) 2010-10-01 2014-09-16 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of multilayer copper bonding wire
JP4860004B1 (en) * 2011-02-28 2012-01-25 タツタ電線株式会社 Bonding wire and manufacturing method thereof
JP5001455B1 (en) * 2011-11-21 2012-08-15 タツタ電線株式会社 Bonding wire and manufacturing method thereof
JP2013197531A (en) * 2012-03-22 2013-09-30 Sharp Corp Semiconductor device and manufacturing method of the same
CN103928418A (en) * 2013-01-11 2014-07-16 英飞凌科技股份有限公司 Bonding wire and method for producing a bond connection
DE102014111895A1 (en) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallized electrical component
US10610976B2 (en) 2015-06-15 2020-04-07 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10737356B2 (en) 2015-06-15 2020-08-11 Nippon Micrometal Corporation Bonding wire for semiconductor device
WO2017013796A1 (en) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
KR20170022969A (en) 2015-07-23 2017-03-02 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 Bonding wire for semiconductor device
KR101659254B1 (en) 2015-07-23 2016-09-22 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 Bonding wire for semiconductor device
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device
WO2017013817A1 (en) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
US9793238B2 (en) 2015-12-21 2017-10-17 Toyota Jidosha Kabushiki Kaisha Copper wire and electrode joining method and joint structure
JP2017117832A (en) * 2015-12-21 2017-06-29 トヨタ自動車株式会社 Copper wire joining method

Similar Documents

Publication Publication Date Title
AU527322B2 (en) Noble metal-refractory metal alloy catalyst
JPH01248538A (en) Semiconductor device
WO2002097145B1 (en) Compositions, methods and devices for high temperature lead-free solder
SG152056A1 (en) Wiring material and wiring board using the same
ES481012A1 (en) Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier
EP0251611A3 (en) Low toxicity corrosion resistant solder
JPS586143A (en) Semiconductor device
JPH0242753A (en) Anticorrosive lead frame
WO2003015217A3 (en) Electric contact
FR2428904A1 (en) Material for electrical contact and process for its preparation
CA2007608A1 (en) Composition and method for stripping tin or tin-lead alloy from copper surfaces
WO1995018464A1 (en) Protective coating combination for lead frames
FR2517503B1 (en) Substrate comprising a pattern consisting of a gold alloy, a noble metal and a base metal, the pattern being isolated by oxides of noble and base metals
JPS57103370A (en) Amorphous semiconductor solar cell
JPS57120644A (en) Gold alloy with pinkish color tone
GB1520105A (en) Artificial teeth construction
DE3476684D1 (en) Amorphous transition metal alloy, thin gold coated, electrical contact
JPH04261714A (en) Wire electrode to cut work piece by electric discharge machining
JPH03135041A (en) Manufacture of bonding fine wire for semiconductor use
JPS5923835A (en) Production of boride diffused alloy
JPS6199645A (en) Copper alloy for bonding of semiconductor device
JPH0216580B2 (en)
JPS62243725A (en) Sulfidization-resisting silver alloy
JPS5586130A (en) Connection of semiconductor element
JPS5267961A (en) Electrode formation of semiconductor unit