JPS60124959A - Wire for connecting semiconductor element - Google Patents

Wire for connecting semiconductor element

Info

Publication number
JPS60124959A
JPS60124959A JP58233352A JP23335283A JPS60124959A JP S60124959 A JPS60124959 A JP S60124959A JP 58233352 A JP58233352 A JP 58233352A JP 23335283 A JP23335283 A JP 23335283A JP S60124959 A JPS60124959 A JP S60124959A
Authority
JP
Japan
Prior art keywords
wire
copper
purity
wires
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58233352A
Other languages
Japanese (ja)
Inventor
Kazuo Sawada
澤田　和夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58233352A priority Critical patent/JPS60124959A/en
Publication of JPS60124959A publication Critical patent/JPS60124959A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable connection of low cost and excellent in reliability by using copper having a purity more than a specific value. CONSTITUTION:The titled wire is manufactured by using copper having a purity of 99.99wt% or more. If the purity of copper is 99.99wt% or more, the deformation behavior of bonding wires can be made close to the case of Au wires, and then connection sufficiently stable without damages of Si semiconductor elements at the time of pressure-bonding and excellent in reliability can be obtained. On condition that the purity is less than 99.99wt%, said elements are liable to be damaged. Besides, if the purity is 99.99wt% or more, the wire can fulfill the desired purpose; however, if the purity is preferably 99.997% or more, connection more excellent in reliability can be obtained.

Description

【発明の詳細な説明】 発明の分野 この発明は、ＩＣ，ＬＳＩおよびトランジスタなどの半
導体素子の組立に際し、チップをステムに装着した後、
チップ上の電極とステムのリードとを接続するのに用い
る半導体素子結線用金属線に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention This invention relates to the assembly of semiconductor elements such as ICs, LSIs, and transistors, after a chip is mounted on a stem.
The present invention relates to a metal wire for connecting semiconductor elements used to connect electrodes on a chip and leads of a stem.

発明の背景 半導体チップの外部との接続に際しては、従来、金を主
成分とする貴金属細線が使用されていた。BACKGROUND OF THE INVENTION Conventionally, thin noble metal wires containing gold as a main component have been used to connect semiconductor chips to the outside.

しかしながら、金線は極めて高価格になるという欠点が
あった。また、一部では高価な金線の使用を避けて、す
なわち脱ｎ金属化を指向して、アルミニウム合金線が使
用されている。しかしながら、アルミニウム合金線では
、以下に詳細に述べるように様々な欠点があった。第１
に、細線への加工性が金に比べてかなり劣るという問題
があった。However, gold wire had the disadvantage of being extremely expensive. In addition, in some cases, aluminum alloy wires are used to avoid the use of expensive gold wires, that is, to aim for n-free metalization. However, aluminum alloy wires have various drawbacks as described in detail below. 1st
Another problem was that the processability into thin wires was considerably inferior to that of gold.

第２に、接続に際し先端にボールを作成し接続づる場合
、このボールの形状が不安定であるという欠点があった
。これは、アルミニウムの表向に酸化被膜が生じやすく
、これが強固なため不安定性をもたらしているものであ
る。第３に、強度が小さく、ボンディング強度あるいは
ループ線の形成状態が良好でないという欠点があった。Secondly, when connecting by forming a ball at the tip, the shape of the ball is unstable. This is because an oxide film tends to form on the surface of aluminum, which is strong and causes instability. Thirdly, there was a drawback that the strength was low and the bonding strength or the forming condition of the loop wire was not good.

第４に、半導体素子上の電極への圧着に用いるキャピラ
リと反応しやすく、キャピラリ先端がしばしば閉塞する
という欠点もあった。Fourth, it easily reacts with the capillary used for pressure bonding to the electrode on the semiconductor element, and the tip of the capillary often becomes clogged.

半導体素子で−は、Ｉ）ＤＩオーダの信頼性が要求され
ているが、アルミニウム合金線を結線用線に用いた場合
、上述のような種々の欠点を有するため、　□ｐｐ−オ
ーダの信頼性を有する半導体素子は到底得られない。Semiconductor devices are required to have I) DI order reliability, but when aluminum alloy wire is used for connection wires, it has various drawbacks as mentioned above, so □pp- order reliability is required. It is impossible to obtain a semiconductor device having this.

本願発明者は、上述の金線およびアルミニウム合金線の
双方の欠点を効果的に解消することを目的として、すな
わち安価でかつ信頼性に優れた半導体素子結線用線を得
ることを目的どして、安価な銅を用いて種々の実験を繰
返した。より具体的に言えば、本願発明者は、タフピッ
チ銅線、無酸素銅線、あるいはこれらを基とした銅合金
線を用いて実験を繰返した。しかしながら、これらの銅
線では、珪＠！Ｆ　１３体素子上のアルミニウム電極へ
の接続に際し、ウェッジボンディングもしくはネイルヘ
ッドボンディングなどの熱圧着法、超音波ボンディング
法またはこれらを併用する方法のいずれにおいても、十
分安定でありかつ信頼性に優れた接続を袴ることは困難
であることがわかっ１こ。The inventor of the present application has aimed to effectively eliminate the drawbacks of both the gold wire and aluminum alloy wire described above, that is, to obtain an inexpensive and highly reliable wire for connecting semiconductor devices. We repeated various experiments using inexpensive copper. More specifically, the inventor of the present application repeated experiments using tough pitch copper wire, oxygen-free copper wire, or copper alloy wire based on these. However, with these copper wires, 窪＠! When connecting to the aluminum electrode on the F13 element, it is sufficiently stable and reliable, regardless of whether it is a thermocompression bonding method such as wedge bonding or nail head bonding, an ultrasonic bonding method, or a method that uses a combination of these methods. I found it difficult to make connections.

銅線がアルミニウム線に比べて比較的硬いため、圧着の
ために要する圧力が、しばしば半導体素子に損傷を与え
てしまうからであった。したがって、従来、半導体素子
結線用線として銅線が実用に供されている例は未だなか
った。Because copper wire is relatively hard compared to aluminum wire, the pressure required for crimping often damages semiconductor devices. Therefore, conventionally, copper wires have not yet been put to practical use as wires for connecting semiconductor elements.

発明のｍ要 それゆえに、この発明の目的は、ｌｌ１２貴金属化を果
たし、安価であり、かつ信頼性に優れた接続をなし得る
、半導体結線用線を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a semiconductor connection wire that is made of 112 noble metal, is inexpensive, and can connect with excellent reliability.

本願発明者は、上述の問題点を鋭意検討し、実験を繰返
したところ、純度９９．９９重量％以上の銅よりなる材
料を用いれば、上述の目的を果たし得る半導体素子結線
用線を得ることができることを見出した。すなわち、こ
の発明は、９９．９９重量％以上の銅よりなる半導体素
子結線用線である。The inventor of the present application has diligently studied the above-mentioned problems and repeated experiments, and has found that by using a material made of copper with a purity of 99.99% by weight or more, a wire for connecting semiconductor elements that can achieve the above-mentioned purpose can be obtained. I discovered that it can be done. That is, the present invention is a wire for connecting a semiconductor element made of 99.99% by weight or more of copper.

ｒ９９．９９重量％以上」としたのは、ボンディングワ
イヤの変形挙動を、金線の場合に近づけ、圧着時に珪素
半導体素子を損傷することなく十分安定でありかつ信頼
性に優れた接続を得るためである。ｒ９９．９９重量％
」未満では、珪素半導体を損傷しやすいことがわかって
いる。この発明では、ｒ９９．９９重量％以上」であれ
ば、所期の目的を果たし得るが、好ましくは、ｒ９９．
９９７１１量％」とすれば、より信頼性に優れた接続を
得ることができる。The reason why the bonding wire is set to 99.99% by weight or more is to bring the deformation behavior of the bonding wire closer to that of gold wire and to obtain a sufficiently stable and reliable connection without damaging the silicon semiconductor element during crimping. It is. r99.99% by weight
It is known that silicon semiconductors are likely to be damaged if the amount is less than 100%. In the present invention, the intended purpose can be achieved if the content is r99.99% by weight or more, but preferably r99.
99711% by volume, a more reliable connection can be obtained.

この発明の実施にあたっては、第１図に部分切欠正面図
で示すように、キャピラリ１から先端が露出した銅ｗＡ
２を加熱し、ボール３を形成する。In carrying out this invention, as shown in the partially cutaway front view in FIG.
2 is heated to form a ball 3.

次に、第２図に略図的正面図で示すように、珪素半導体
チップ４上のアルミニウムからなる電極５上に、たとえ
ば超音波ボンディングにより圧着することにより、アル
ミニウム電極５に接続し得る。Next, as shown in a schematic front view in FIG. 2, it can be connected to the aluminum electrode 5 by pressing onto the aluminum electrode 5 on the silicon semiconductor chip 4 by, for example, ultrasonic bonding.

なお、第２図において６はダイボンディング部、７はス
テム、８は外部リードを示す。In FIG. 2, 6 indicates a die bonding part, 7 indicates a stem, and 8 indicates an external lead.

なお、第２図において想像線で示す９は、外部リード８
との接続を行なった後のループ線の形状の好ましくない
状態、すなわちループ線が寝すぎた状態を示すものであ
り、従来のアルミニウム合金線を使用した場合、しばし
ば、このような状態となっていた。In addition, 9 shown by an imaginary line in FIG. 2 is the external lead 8.
This indicates an unfavorable state of the shape of the loop wire after connection with the wire, that is, a state in which the loop wire is too sagging.When using conventional aluminum alloy wire, this condition often occurs. Ta.

なお、従来の金線からなる半導体素子結線用線の接続は
大気下で行なわれていたが、この発明の銅線の場合には
、たとえばアルゴン、ヘリウム、窒素、ネオンなどの還
元性ガス雰囲気下で行なわれる。銅線の表面に酸化被膜
が生じることを防止するためである。Note that conventional gold wires for connecting semiconductor devices were connected in the atmosphere, but the copper wires of the present invention can be connected in an atmosphere of reducing gases such as argon, helium, nitrogen, and neon. It will be held in This is to prevent an oxide film from forming on the surface of the copper wire.

発明の効果 この発明は、上述したように、９９．９９１！１％の銅
よりなる半導体素子結線用線であるため、脱負金属化を
果たし、安価な半導体素子結線用線とすることができる
。また、このような高純度の銅を用いるものであるため
、その酸化被躾特１１ニや表面張力などの性質に基づき
、還元雰囲気下で安定なボールを形成することができ、
またアルミニウム線の場合に比べて比較的小さなボール
を形成することができるので、より小さな電極に接続す
ることも可能となる。さらに、アルミニウムに比べて高
強度であるためループ線の状態をより好ましいものとす
ることもできる。さらに、上述のようにｒ９９．９９重
但％以上」と高純度の銅を用いるものであるため変形能
が高く、したがって珪素半導体素子を損傷するおそれも
ない。（まだ極細線への加工性にも優れるものである。Effects of the Invention As described above, this invention is a wire for connecting semiconductor elements made of 99.991!1% copper, so it can be made into a negative metal and can be made into an inexpensive wire for connecting semiconductor elements. . In addition, since such high-purity copper is used, it is possible to form stable balls in a reducing atmosphere based on its properties such as oxidation resistance and surface tension.
Furthermore, since it is possible to form a relatively small ball compared to the case of aluminum wire, it is also possible to connect to a smaller electrode. Furthermore, since it has higher strength than aluminum, the condition of the loop wire can be made more preferable. Furthermore, as described above, since high-purity copper (r99.99% by weight or higher) is used, the deformability is high, and therefore there is no risk of damaging the silicon semiconductor element. (It still has excellent processability into ultra-fine wires.

また、銅を用いるものであるため、アルミニウムあるい
は銀などの電極材料との接合性に優れ、したがってアル
ミニウム電極や銀めっきリードとの接続強度を上げるこ
とも可能となる。）さらにリードフレームに銅もしくは
銅合金を用いた場合には、リードフレームをめっきせず
とも接続することができ、より一層脱貴金属化を果たす
ことが可能となるなど、産業上多大の利益をもたらすも
のであることがわかる。Furthermore, since it uses copper, it has excellent bonding properties with electrode materials such as aluminum or silver, and therefore it is possible to increase the connection strength with aluminum electrodes and silver-plated leads. ) Furthermore, when copper or copper alloy is used for the lead frame, connections can be made without plating the lead frame, making it possible to further eliminate precious metals, which brings great industrial benefits. I can see that it is something.

この発明は、ＩＣ５ＬＳＩ、トランジスタなどの様々な
半導体素子用ボンディングワイヤに用いることができ、
特に生産性の高いボールボンディングの場合に最適なも
のであることを指摘しておく。This invention can be used for bonding wires for various semiconductor devices such as IC5LSI and transistors.
It should be pointed out that this is particularly suitable for highly productive ball bonding.

実施例の説明 この発明の実施例として、９９．９９７１鋤％、９９．
９９８重量％の再電解鋼、および９９．９９９重量％以
上のゾーンメルティング法により得られた高純度の銅を
用いて銅線を作成した。これを第１表に示すように、そ
れぞれ、本発明例１゜２および３とした。また、従来例
として、従来から公知のアルミニウム細線を準備し、従
来例１とし、またＡＮ−１％８１合金細線を従来例２と
した。さらに比較例１．２．３として、９９．８５重量
％、９９．９３重量％および９９．９８重量％銅線を、
本発明例１．２．３と同様に準備した。DESCRIPTION OF EMBODIMENTS As an embodiment of the present invention, 99.9971 plow%, 99.
A copper wire was made using 998% by weight of re-electrolyzed steel and 99.999% by weight or more of high-purity copper obtained by a zone melting method. As shown in Table 1, these were designated as Invention Examples 1, 2 and 3, respectively. Further, as a conventional example, a conventionally known aluminum thin wire was prepared and referred to as Conventional Example 1, and an AN-1% 81 alloy thin wire was prepared as Conventional Example 2. Furthermore, as Comparative Example 1.2.3, 99.85% by weight, 99.93% by weight and 99.98% by weight copper wire,
It was prepared in the same manner as Inventive Example 1.2.3.

上述した本発明例１．２．３、従来例１．２ならびに比
較例１．２．３を、それぞれ、アルゴン雰囲気下に置い
てキャピラリの先端に電気アークによりボールを作成し
、珪素半導体素子上のアルミニウム電極と、各種のめっ
きを施した燐青銅リードフレームとの接続を行なった。Inventive Example 1.2.3, Conventional Example 1.2, and Comparative Example 1.2.3 described above were each placed in an argon atmosphere, a ball was created at the tip of the capillary by an electric arc, and a ball was formed on the silicon semiconductor element. The aluminum electrode was connected to a phosphor bronze lead frame with various platings.

この接続結果の評価を、第２表ないし第４表に示す。Evaluations of the connection results are shown in Tables 2 to 4.

第２表ないし第４表から明らかなように、本発明例１．
２．３では、ボール形成能、ループ線の状態、素子の損
傷、伸線加工性、接続強度、リードフレームとの接続性
のいずれにおいても、良好な性能を示すことがわかる。As is clear from Tables 2 to 4, inventive example 1.
It can be seen that No. 2.3 shows good performance in terms of ball forming ability, loop wire condition, element damage, wire drawability, connection strength, and connectivity with the lead frame.

本発明例１　９９．９９７重量％銅線 〃　２　９９．９９８　〃 〃　３　９９．９９９ 従来例　１　アルミニウム細線ｌ線 ”２　Ａ庭−１％５ｉｌｌ線 比較例　１　９９．８５重量％ｔＪｉ１線〃　２　９９
．９３ 本発明例１　良好　良好 〃　２ 〃　３ 従来例　１　バラツキあり　寝すぎる ２　〃 □ 比較例　１　バラツキあり　良好 ３　良好 本発明例１　問題なし　良好　良好 〃　２ 〃　３ 従来例　１　〃　優れない　やや劣る ＃　２　ｖ　ｐｔ　ｕ 比較例　１　損傷あり　良好 ２　良好 ｔ リードフレームとの接続性 良否　めっきの種類 本発明例１　良好　ＡＱ 〃　２　無 ｎ　３　１’ｂ 従来例　１　劣る　無 ２　やや劣る　八〇 比較例　１　良好　ＡＩＪ ２無 ｎ、３　Ｎ＋Present invention example 1 99.997% by weight copper wire 2 99.998 3 99.999 Conventional example 1 Thin aluminum wire 2 A-1% 5ill wire Comparative example 1 99.85% by weight tJi 1 wire 2 99
．． 93 Example 1 of the present invention Good Good 2 3 Conventional example 1 Variation Excessive 2 〃 □ Comparative example 1 Variation Good 3 Good Example 1 of the invention No problem Good Good 2 3 Conventional example 1 Not excellent Slightly inferior # 2 v pt u Comparative example 1 Damaged Good 2 Good t Connectivity with lead frame Type of plating Invention example 1 Good AQ 〃 2 No n 3 1'b Conventional example 1 Poor No 2 Slightly inferior 80 Comparative example 1 Good AIJ 2 no n, 3 N+

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、この発明を実施する際のホール形成状態を示
す略図的正面図である。第２図は、この発明の半導体素
子結線用線の接続された状態の一例を示す略図的正面図
である。 ２は、半導体素子結線用線を示す。FIG. 1 is a schematic front view showing the state of hole formation when implementing the present invention. FIG. 2 is a schematic front view showing an example of a connected state of the semiconductor element connection wire of the present invention. 2 indicates a wire for connecting semiconductor elements.

Claims (2)

【特許請求の範囲】[Claims] （１）　９９．９９重量−以上の銅よりなることを特徴
とする、半導体素子結線用線。(1) A wire for connecting semiconductor devices, characterized by being made of copper having a weight of 99.99 - or more. （２）　前記網が、９９．９９７重量％以上含まれてい
る、特許請求の範ＶＢ第１項記載の半導体素子結線用線
。(2) The wire for connecting semiconductor elements according to claim VB, wherein the net contains 99.997% by weight or more.
JP58233352A 1983-12-09 1983-12-09 Wire for connecting semiconductor element Pending JPS60124959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58233352A JPS60124959A (en) 1983-12-09 1983-12-09 Wire for connecting semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58233352A JPS60124959A (en) 1983-12-09 1983-12-09 Wire for connecting semiconductor element

Publications (1)

Publication Number Publication Date
JPS60124959A true JPS60124959A (en) 1985-07-04

Family

ID=16953798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58233352A Pending JPS60124959A (en) 1983-12-09 1983-12-09 Wire for connecting semiconductor element

Country Status (1)

Country Link
JP (1) JPS60124959A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194758A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Semiconductor device
JPS61224443A (en) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS622645A (en) * 1985-06-28 1987-01-08 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS6222469A (en) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS6278862A (en) * 1985-09-30 1987-04-11 Tanaka Denshi Kogyo Kk Copper wire for bonding of semiconductor element
JPS6294969A (en) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS6297360A (en) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device
JPS62111455A (en) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp Very thin high-purity copper wire for wire-bonding semiconductor device
JPS62216238A (en) * 1986-03-17 1987-09-22 Tatsuta Electric Wire & Cable Co Ltd Copper bonding wire for semiconductor element having excellent corrosion resistance
JPS63211731A (en) * 1987-02-27 1988-09-02 Tatsuta Electric Wire & Cable Co Ltd Bonding wire

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194758A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Semiconductor device
JPS61224443A (en) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS622645A (en) * 1985-06-28 1987-01-08 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS6222469A (en) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS6278862A (en) * 1985-09-30 1987-04-11 Tanaka Denshi Kogyo Kk Copper wire for bonding of semiconductor element
JPH0587017B2 (en) * 1985-09-30 1993-12-15 Tanaka Electronics Ind
JPS6294969A (en) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS6297360A (en) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device
JPS62111455A (en) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp Very thin high-purity copper wire for wire-bonding semiconductor device
JPH0445978B2 (en) * 1985-11-08 1992-07-28 Mitsubishi Materials Corp
JPS62216238A (en) * 1986-03-17 1987-09-22 Tatsuta Electric Wire & Cable Co Ltd Copper bonding wire for semiconductor element having excellent corrosion resistance
JPS63211731A (en) * 1987-02-27 1988-09-02 Tatsuta Electric Wire & Cable Co Ltd Bonding wire

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