JPS63238232A - Fine copper wire and its production - Google Patents

Fine copper wire and its production

Info

Publication number
JPS63238232A
JPS63238232A JP62071173A JP7117387A JPS63238232A JP S63238232 A JPS63238232 A JP S63238232A JP 62071173 A JP62071173 A JP 62071173A JP 7117387 A JP7117387 A JP 7117387A JP S63238232 A JPS63238232 A JP S63238232A
Authority
JP
Japan
Prior art keywords
wire
9ppm
bonding
annealing
copper wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62071173A
Other languages
Japanese (ja)
Inventor
Masaaki Kurihara
正明 栗原
Toru Tanigawa
徹 谷川
Shoji Shiga
志賀　章二
Toshiaki Inaba
稲葉　年昭
Ichiro Kaga
加賀　一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FURUKAWA TOKUSHU KINZOKU KOGYO KK
Furukawa Electric Co Ltd
Original Assignee
FURUKAWA TOKUSHU KINZOKU KOGYO KK
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FURUKAWA TOKUSHU KINZOKU KOGYO KK, Furukawa Electric Co Ltd filed Critical FURUKAWA TOKUSHU KINZOKU KOGYO KK
Priority to JP62071173A priority Critical patent/JPS63238232A/en
Publication of JPS63238232A publication Critical patent/JPS63238232A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
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    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01024—Chromium [Cr]
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/0105—Tin [Sn]
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    • H01L2924/01079—Gold [Au]

Abstract

PURPOSE:To obtain a fine copper wire by which good bonding characteristics for a semi-conductor can be obtd., by repeatedly executing wire drawing and annealing to a Cu alloy ingot contg. limited ratios of one or more kinds among Cr, Zr, Ag and Sn and specifying the final working ratio thereof. CONSTITUTION:The ingot contg. the total 0.2-9.5ppm of one or more kinds among 0.1-25ppm Cr, 0.1-9ppm Zr, 0.1-9ppm Ag, and 0.1-9ppm Sn and consisting of the balance Cu is cast in a vacuum or nonoxidizing atmosphere. Said ingot is repeatedly subjected to the wire drawing and annealing treatment to the desired wire diameter. At this time, the final working ratio is at least regulated to 70-99.99% and the ingot is subjected to the annealing treatment to produce the copper thin wire having 2-20% elongation. After the annealing treatment, 1-5% working is executed to the wire at need. Said fine copper wire has excellent deformability, has high wire strength and in which cold softening and sagging of a loop are not generated. The wire furthermore has the bonding characteristics equal to or above gold.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電子機器用に用いられる銅細線、特に半導体の
製造にボンディングワイヤとして用いる銅細線とその製
造法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin copper wire used for electronic equipment, particularly a thin copper wire used as a bonding wire in the manufacture of semiconductors, and a method for manufacturing the same.

〔従来の技術〕[Conventional technology]

ＩＣやトランジスタ等の半導体の製造において、Ｓ１チ
ツプ上の回路素子と外部の電源への接続や、外部との情
報のヤリとりを行なうため、回路素子に接続した電極パ
ッドと、半導体のリード間に線径１５〜１００μｍの金
やアルミニウム又はアルミニウム合金等の細線が用いら
れている。In the manufacture of semiconductors such as ICs and transistors, in order to connect the circuit elements on the S1 chip to an external power supply and to exchange information with the outside world, there is a connection between the electrode pads connected to the circuit elements and the leads of the semiconductor. A thin wire made of gold, aluminum, aluminum alloy, or the like with a wire diameter of 15 to 100 μm is used.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このうちアルミニウムやアルミニウム合金は電源との接
続が同種の金属で行える利点を有し、安価でおる。しか
しポールボンドが困難なため、生産性に劣る超音波を用
いたウェッジボンドが行なわれ、更に耐食性が劣るため
、樹脂封止型の半導体では、透湿水によるワイヤの腐食
が生じる。その結果一部の機密封止型半導体に使用され
ているにすぎない。Among these, aluminum and aluminum alloys have the advantage that they can be connected to the power source using the same type of metal, and are inexpensive. However, since pole bonding is difficult, wedge bonding using ultrasonic waves is performed, which is inferior in productivity. Furthermore, since corrosion resistance is inferior, in resin-sealed semiconductors, wires are corroded by moisture permeable water. As a result, it is only used in some hermetically sealed semiconductors.

一方、金は耐食性に優れ、生産性の高いボールボンディ
ングを利用できる利点を有し、樹脂封止型の半導体を中
心に広く利用されている。On the other hand, gold has the advantage of excellent corrosion resistance and the ability to use highly productive ball bonding, and is widely used mainly in resin-sealed semiconductors.

しかしながら素材である金が著しく高価であるばかりか
、電極パッドのアルミニウムやアルミニウム合金と脆弱
なＡ　、ｅ　−Ａ　ｕの金属間化合物を形成したり、あ
るいは透湿水の存在下でアルミニウと電食対を形成して
アルミニウムを腐食せしめる等により、電気回路の断線
を生じることが知られている。特に半導体の高度集積化
によって熱発生による温度上昇やチップ面積の増大によ
る透湿水経路の短縮と共に多ピン化による信頼性の大巾
な低下が懸念される。However, not only is the material gold extremely expensive, but it can also form fragile A, e-Au intermetallic compounds with the aluminum or aluminum alloy of the electrode pad, or cause electrolytic corrosion with aluminum in the presence of permeable water. It is known that the formation of a pair causes corrosion of aluminum, leading to breakage of electrical circuits. In particular, with the high degree of integration of semiconductors, there are concerns that the temperature will rise due to heat generation, the permeable water path will be shortened due to an increase in the chip area, and reliability will be drastically reduced due to the increase in the number of pins.

このため金に代替でき、かつ特性的にも金に劣らないワ
イヤの開発が望まれ、銅のワイヤが提案されている。し
かしその変形能が金に劣り、電極パッド下にクランクを
生じたり電極のアルミニウムとの接合が不十分であると
いう問題点を生じている。特に高集積ＩＣでは、電極パ
ッド下に５ｉＯｚ等の脆い絶縁層が存在する例が多く、
金に匹敵するかまたはそれ以上の変形能を有する銅ワイ
ヤの開発が期待されている。Therefore, there is a desire to develop a wire that can replace gold and has properties comparable to gold, and copper wire has been proposed. However, its deformability is inferior to that of gold, resulting in problems such as crank formation under the electrode pad and insufficient bonding with the aluminum electrode. Especially in highly integrated ICs, there are many cases where a fragile insulating layer such as 5iOz exists under the electrode pad.
The development of copper wires with deformability comparable to or better than gold is expected.

〔問題点を解決するための手段〕[Means for solving problems]

本発明はこれに鑑み種々検討の結果、長期信頼性の面で
は脆弱な界面相の形成がＡｕの数分の１以下であり、ポ
ールボンディングにおいては電極パッドのＡ１との接合
性が良いのでボール浮き率が小さく、ざらには低荷重、
低超音波出力を要求される高集積ＩＣにおいても良好な
ボンディング特性が得られる銅細線及びその製造方法を
開発したものである。これにより、ＡＵに比べはるかに
安価で変形能に優れ、ワイヤ強度が高く、常温軟化によ
るループのダレを生じないワイヤの供給が可能になった
。In view of this, the present invention has been developed as a result of various studies.In terms of long-term reliability, the formation of a fragile interfacial phase is less than a fraction of that of Au, and in pole bonding, the bonding property with electrode pad A1 is good, so the ball Low floating rate, low load,
We have developed a thin copper wire and a method for manufacturing the same that can provide good bonding characteristics even in highly integrated ICs that require low ultrasonic output. This has made it possible to supply a wire that is much cheaper than AU, has excellent deformability, has high wire strength, and does not cause loop sagging due to softening at room temperature.

即ち本発明銅細線は、Ｃｒ０．１〜２．５１）Ｉ）ｍと
、Ｚ　ｒ０．１〜９ｐＤｍ　、　Ａ１．１〜９ｐｐｍ　
、　Ｓｎ０．１〜９１）＄）ｍの何れか１種又は２種以
上とを合計０．２〜９．５ｐｐｍ含み、残部Ｃｕからな
ることを特徴とするものである。That is, the copper wire of the present invention contains Cr0.1-2.51)I)m, Zr0.1-9pDm, and A1.1-9ppm.
, Sn0.1-91)$)m in a total amount of 0.2-9.5 ppm, and the balance is Cu.

また本発明銅細線の製造法は、真空又は非酸化性雰囲気
で鋳造したＣｒ０．１〜２．５ｐｐｍと、Ｚ　ｒ０．１
〜９Ｄｔ）ｍ　、　Ａ１．１〜９１）ｌ）ｍ　、　Ｓｎ
０．１〜９　ＤＤｍの何れか１種又は２種以上とを合計
０．２〜９．５ｐｐｍ含み、残部Ｃｕからなる鋳塊を伸
線加工と焼鈍処理を繰返して所定の線径にするに当り、
少なくとも最終加工率を７０〜９９．９９％とし、これ
を焼鈍処理により２〜２０％の伸びとすることを特徴と
するものである。In addition, the method for manufacturing the copper wire of the present invention includes casting in a vacuum or non-oxidizing atmosphere with Cr0.1 to 2.5ppm and Zr0.1.
~9Dt)m, A1.1~91)l)m, Sn
An ingot containing one or more of 0.1 to 9 DDm in a total amount of 0.2 to 9.5 ppm and the remainder consisting of Cu is repeatedly subjected to wire drawing and annealing to obtain a predetermined wire diameter. Hit,
It is characterized in that the final processing rate is at least 70 to 99.99%, and this is elongated to 2 to 20% by annealing.

〔作　用〕[For production]

本発明において合金組成を上記の如く限定したのは次の
理由によるものである。The reason why the alloy composition is limited as described above in the present invention is as follows.

半導体素子とインナーリード間のワイヤボンディングは
、ポールボンディングされる例が多い。ポールボンディ
ングにおいて、細線はト１２炎又は放電により先端をメ
ルトしてボールが形成されるが、ボールが真球に近く偏
芯していないこと、ボールが電極であるアルミニウムパ
ッドに容易に接合すること、ワイヤのループが適当な高
さを保持すること、ステッチ側の接合が十分であること
が必要とされる。Wire bonding between a semiconductor element and an inner lead is often pole bonding. In pole bonding, a ball is formed by melting the tip of a thin wire using a flame or electric discharge, but the ball must be close to a true sphere and not eccentric, and the ball must be easily bonded to the aluminum pad that is the electrode. , it is necessary that the wire loops hold the proper height, and that the stitch side joints are sufficient.

銅は純度の向上により、変形能が優れたものとなるも、
常温軟化し易くループのダレを生じたりすること、ロッ
トにより特性のバラツキを生じ易いこと、またボールボ
ンディング時に電極パッドのアルミニウムと接合しない
、ボール浮き現象を生じ易い等の欠点を有している。こ
れを解消するためＣｕにＣｒ０．１〜２．５ｐｐｍとＺ
　ｒ０．１〜９ｐｐｍ　、　Ａ　ｇ０．ｉ　〜９ｐｐｍ
　、　Ｓ　ｎ０．１〜９１）Ｄｍの何れか１種又は２種
以上とを合計０．２〜９．５ｐｐｍ添加したもので、こ
れ等の添加は上記欠点を解消すると共に、チップの機械
的損傷を防止するため、低荷重、低超音波出力条件を要
求される高集積ＩＣのボールボンディングにおいても金
に匹敵する以上のボンディング特性が得られる。しかし
て各添加元素の合計含有量が下限未満では添加の効果が
得られず、上限を越えるとボール形状を悪化するためで
ある。Copper has improved deformability due to improved purity, but
It has disadvantages such as being easily softened at room temperature and causing loop sagging, being prone to variations in properties depending on the lot, not bonding with the aluminum of the electrode pad during ball bonding, and easily causing the ball floating phenomenon. To solve this problem, add 0.1 to 2.5 ppm of Cr and Z to Cu.
r0.1-9ppm, A g0. i ~9ppm
, S n 0.1 to 91) Dm in a total amount of 0.2 to 9.5 ppm, and these additions eliminate the above drawbacks and prevent mechanical damage to the chip. In order to prevent this, bonding properties comparable to or better than gold can be obtained even in ball bonding of highly integrated ICs that require low load and low ultrasonic output conditions. However, if the total content of each additive element is less than the lower limit, the effect of addition cannot be obtained, and if it exceeds the upper limit, the shape of the ball will deteriorate.

また以上の作用は高純度の銅で、より有効に発現される
もので、その不純物は少ないほど良く、純度９９．９９
９％以上、望ましくは９９．９９９９％以上の純銅を用
いるとよい。In addition, the above-mentioned effects are more effectively expressed with high-purity copper, and the fewer impurities it has, the better.
It is preferable to use pure copper of 9% or more, preferably 99.9999% or more.

次に本発明製造法は非酸化性雰囲気又は真空中で鋳造し
た上記組成の銅合金鋳塊を必要に応じて熱間加工を行な
い、その後伸線加工と焼鈍を繰り返して所定線径とした
後、最終焼鈍を行なって所定の性能とするものでおる。Next, in the manufacturing method of the present invention, a copper alloy ingot having the above composition that is cast in a non-oxidizing atmosphere or vacuum is hot worked as necessary, and then wire drawing and annealing are repeated to obtain a predetermined wire diameter. Then, final annealing is performed to achieve the specified performance.

この際少なくとも焼鈍前の最終加工率は７０〜９９．９
９％、好ましくは９０〜９９．９５％とし、更に１５０
〜４００°Ｃの温度で所定時間焼鈍することにより、伸
びを２〜２０％、好ましくは６〜１６％に調整すればよ
り優れた特性とすることができる。また焼鈍により細線
の特性を発現する代わりに、過剰に焼鈍した後、１〜５
％の加工率の伸線加工を行なって同様の特性とすること
もできる。At this time, the final processing rate at least before annealing is 70 to 99.9.
9%, preferably 90 to 99.95%, and further 150%
By annealing at a temperature of ~400°C for a predetermined period of time, better properties can be obtained by adjusting the elongation to 2 to 20%, preferably 6 to 16%. Also, instead of developing fine wire characteristics through annealing, after excessive annealing, 1 to 5
It is also possible to obtain similar characteristics by performing wire drawing processing at a processing rate of .

銅細線としては前記のボール及びステッチ側ボンディン
グ性と共にループ形状やワイヤ強度が実用的に重要であ
る。これ等の特性にはワイヤの機械的特性が関与するけ
れども半導体の種類やボンディング方式及び装置条件に
よって要求される特性は異なる。しかしながら伸びが著
しく小さいと、ループ高さが大きくなり、ワイヤ間での
ショートを引起す原因となる他、ワイヤ変形能が小ざく
、ステッチボンドを行なう際に高荷重、高超音波出力を
必要とするなど、ボンディング性が低下する。一方伸び
が著しく大きいとループ高さが低くなり、チップとの接
触を招く危険があるほか、ステッチボンドでのワイヤ潰
れが大きくなり、ネック部が脆弱となり易い。またボン
ド後のワイヤ変形能が不均一となり、ボール形成が行え
ない事態が生じる。このため前記の機械的特性、特に伸
びが実用上有効であり、これ等の特性を実用的に安定し
て有利に発現するためには、製造工程、特に最終伸線工
程での加工率を７０〜９９．９９％とし、その後の最終
焼鈍により伸びを２〜２０％とするか又は過剰に焼鈍し
た後１〜５％の加工率の伸線加工を行なって伸びを２〜
２０％とする必要がある。As for the copper thin wire, the above-mentioned ball and stitch side bonding properties as well as loop shape and wire strength are practically important. These characteristics are related to the mechanical characteristics of the wire, but the characteristics required differ depending on the type of semiconductor, bonding method, and device conditions. However, if the elongation is extremely small, the loop height will become large, which may cause a short between the wires, and the wire deformability will be small, requiring high loads and high ultrasonic output when stitch bonding. etc., bonding properties deteriorate. On the other hand, if the elongation is extremely large, the loop height will be low, which may lead to contact with the chip, and the wire will be more likely to be crushed by the stitch bond, making the neck part likely to be fragile. Furthermore, the deformability of the wire after bonding becomes non-uniform, and a situation arises in which ball formation cannot be performed. Therefore, the mechanical properties mentioned above, especially the elongation, are practically effective, and in order to stably and advantageously express these properties in practical terms, the processing rate in the manufacturing process, especially in the final wire drawing process, must be increased to 70%. ~99.99% and then final annealing to bring the elongation to 2 to 20%, or excessive annealing and wire drawing at a processing rate of 1 to 5% to bring the elongation to 2 to 20%.
It needs to be 20%.

（実施例〕 以下本発明を実施例に基づき、更に詳細に説明する。(Example〕 The present invention will be explained in more detail below based on examples.

実施例１ 真空溶解炉を用いて９９．９９９６％の純銅に添加元素
を加え、第１表に示す合金組成の鋳塊ビレット（直径２
５Ｍ、長さ１４０ｍ）を鋳造した。このビレットを面側
して直径２０ｍ、長さ１００ｓとした後、熱間圧延によ
り直径１０Ｍとし、その後直径８ｍまで皮ムキを入れて
伸線を行った。次にこれを加工率９２％の伸線と３５０
℃の真空焼鈍を繰り返して、直径２５μ而のワイヤとし
、Ｒ俊にアルゴン雰囲気中２５０〜４００℃の温度とし
た走間焼鈍炉を通して焼鈍し、伸び約１５％前後のワイ
ヤを製造した。これ等について破断強度（Ｂｊりと伸び
（Ｅｉ）を測定した。その結果を第１表に併記した。尚
ワイヤ中の酸素量は何れも５１）ｐｍ以下であった。Example 1 Additional elements were added to 99.9996% pure copper using a vacuum melting furnace, and an ingot billet (diameter 2
5M, length 140m) was cast. This billet was flattened to a diameter of 20 m and a length of 100 s, then hot rolled to a diameter of 10 m, and then stripped to a diameter of 8 m and wire drawn. Next, this is wire drawn with a processing rate of 92% and 350
A wire with a diameter of 25 μm was obtained by repeating vacuum annealing at a temperature of 0.degree. The breaking strength (Bj) and elongation (Ei) of these wires were measured.The results are also listed in Table 1.The amount of oxygen in the wire was 51) pm or less in all cases.

次に上記ワイヤについて１０％ｆｌｚ−Ｎ２雰囲気中で
、ボンディング条件を、荷重３５ｇ、超音波出力０．０
２Ｗ　、時間３０　ｍ　Ｓｅｃ、ステージ温度２７５℃
としてマニュアル型のワイヤボンダーでボールボンドを
行ない、次の項目について比較試験を行なった。その結
果を第２表に示す。Next, the above wire was bonded in a 10% flz-N2 atmosphere with a load of 35 g and an ultrasonic output of 0.0.
2W, time 30mSec, stage temperature 275℃
Ball bonding was performed using a manual wire bonder, and comparative tests were conducted on the following items. The results are shown in Table 2.

（１）ボールの形状（真球度、偏芯） （２）ボールの歪（ボールアップ直後のボール径と押潰
したボール径との比較） 、（３）ボール浮き（Ｓｉウェハ上に蒸着した１μ而厚
さのＡ１にボールボンドした時の接合不成功率〉 （４）チップ割れ （５）接合ワイヤ破断モード（ボンディング後ワイヤプ
ル試験を行なった時の破断の部位が接合部かワイヤ切れ
かをみる。ワイヤ切れの割合（％）で示す。） （６）ループ形状（ボンディング後のループの形状） 尚、（５）、（ｆ））の項目については、基材としてメ
ッキレスのＣｕ−０，１５％Ｃｒ−０，１％Ｓｎ含金条
（厚さ０．２５ｒＮｒ１）を用いた。(1) Ball shape (sphericity, eccentricity), (2) Ball distortion (comparison of ball diameter immediately after ball up and crushed ball diameter), (3) Ball floating (deposited on Si wafer) Bonding failure rate when ball bonding to A1 with a thickness of 1 μm (4) Chip cracking (5) Bonding wire fracture mode (when performing a wire pull test after bonding, check whether the fracture occurs at the joint or the wire breaks) ) (6) Loop shape (loop shape after bonding) For items (5) and (f), non-plated Cu-0,15 is used as the base material. %Cr-0.1% Sn containing metal strip (thickness 0.25rNr1) was used.

第１表及び第２表から明らかなように本発明合金Ｎα１
〜４は何れもＡｕ線を用いた従来合金Ｎα１１と同等以
上の特性を有することが判る。これに対しＣｒ等を添加
しない比較合金Ｎα１０やＣｒ等を添加するもその添加
量が少ない比較合金Ｎα５，６はほぼ同じレベルのボー
ル変形能を有するも、常温軟化し易く、更にボール浮き
率が大きく、ループ形状が適当でないことが判る。As is clear from Tables 1 and 2, the alloy Nα1 of the present invention
It can be seen that all of the alloys No. 4 to No. 4 have properties equivalent to or better than those of the conventional alloy Nα11 using Au wire. On the other hand, comparative alloys Nα10, which do not contain Cr, etc., and comparative alloys Nα5 and 6, which have small amounts of Cr, etc. added, have almost the same level of ball deformability, but they tend to soften at room temperature and have a lower ball floating rate. It is clear that the loop shape is not appropriate.

またＣｒ等を過剰添加した比較合金Ｎα７〜９は変形能
が小ざく、チップ割れを起し、ループ形状やステッチボ
ンド性も悪いことが判る。In addition, it can be seen that comparative alloys Nα7 to Nα9 containing excessive amounts of Cr, etc. have small deformability, cause chip cracking, and have poor loop shape and stitch bonding properties.

実施例２ 実施例１における本発明合金Ｎα２と同じ合金組成の鋳
塊ビレットを用いてワイヤを製造した。Example 2 A wire was manufactured using an ingot billet having the same alloy composition as the alloy Nα2 of the present invention in Example 1.

この場合最終伸線加工率を８０．９９．９５　、９９．
９９％とすると共に、焼鈍温度を変えて種々の伸びのも
のとし、それ以外は実施例１と同様にして行った。In this case, the final wire drawing processing rate is 80.99.95, 99.
The process was carried out in the same manner as in Example 1 except that the elongation was set at 99% and the annealing temperature was changed to obtain various elongations.

これ等のワイヤについて実施例１の条件でメッキレスの
Ｑｕ−０，１５％Ｃｒ−０，１％Ｓｎ合金条（厚さ、２
５ｍ＞にボールボンドを行い、そのプル試験を行なって
、ワイヤ破断モードの割合いを求めた。その結果を第１
図に示す。These wires were prepared under the conditions of Example 1 using a non-plated Qu-0,15%Cr-0,1%Sn alloy strip (thickness: 2
Ball bonding was performed at a distance of 5 m>, and a pull test was performed to determine the percentage of wire breakage mode. The result is the first
As shown in the figure.

図から明らかなように高加工率でも伸びが２〜２０％の
範囲内で良好なボンディング特性が１ｑられることが判
る。As is clear from the figure, even at a high processing rate, good bonding properties can be achieved within the range of 2 to 20% elongation.

〔発明の効果〕〔Effect of the invention〕

本発明の銅細線は変形能が優れるばかりか、ワイヤ強度
が高く、常温軟化せず、ループのダレを生じない。また
ボールボンディングにおいて電極パッドのアルミニウム
との接合性がよく、ボール浮き率が小さいという優れた
特性を有する。更に本発明の銅細線によればチップの機
械的損傷を防止できるため、低荷重、低超音波出力条件
を要求される高集積ＩＣのボールボンドにおいて、金に
匹敵する以上のボンディング特性が得られ、安価な銅線
により金線を有利に代替できる。The thin copper wire of the present invention not only has excellent deformability, but also has high wire strength, does not soften at room temperature, and does not cause loop sagging. Furthermore, in ball bonding, it has excellent properties such as good bondability with aluminum of the electrode pad and low ball floating rate. Furthermore, since the copper wire of the present invention can prevent mechanical damage to the chip, bonding properties comparable to or better than gold can be obtained in ball bonds for highly integrated ICs that require low load and low ultrasonic output conditions. , cheap copper wire can advantageously replace gold wire.

このように本発明は高純度銅の特性を追求して得られた
もので上記特性のほか長期の信頼性について、前記の如
＜Ａｉ／ＡＵが固相拡散して脆弱な界面相を形成し、パ
ープルプラーグ現象を起し易いが、Ａ、ｉ！／Ｃｕはこ
れに比し数分の１以下でおることが知られており、この
点からも工業上の効果は極めて大きい。In this way, the present invention was obtained by pursuing the characteristics of high-purity copper, and in addition to the above characteristics, the long-term reliability is improved by the fact that Ai/AU diffuses into the solid phase and forms a brittle interfacial phase as described above. , it is easy to cause the purple plug phenomenon, but A, i! /Cu is known to be less than a fraction of this, and from this point of view as well, the industrial effect is extremely large.

【図面の簡単な説明】[Brief explanation of the drawing]

第１１図はＣｕ−０，１５％Ｃｒ−０，１％Ｓｎ合金条
にボールボンドしたワイヤの破断モード中、正常なワイ
ヤ切れの割合を、ワイヤの最終伸線加工率と伸びの関係
を示す説明図である。 第１図 ワイヤ伸び１％）Figure 11 shows the ratio of normal wire breakage during the fracture mode of a wire ball-bonded to a Cu-0,15%Cr-0,1%Sn alloy strip, and the relationship between the final drawing rate and elongation of the wire. It is an explanatory diagram. Figure 1 Wire elongation 1%)

Claims (5)

【特許請求の範囲】[Claims] （１）Ｃｒ０．１〜２．５ｐｐｍと、Ｚｒ０．１〜９ｐ
ｐｍ，Ａｇ０．１〜９ｐｐｍ，Ｓｎ０．１〜９ｐｐｍの
何れか１種又は２種以上とを合計０．２〜９．５ｐｐｍ
含み、残部Ｃｕからなる銅細線。(1) Cr0.1-2.5ppm and Zr0.1-9p
pm, Ag0.1-9ppm, Sn0.1-9ppm, and one or more of them in a total of 0.2-9.5ppm
A thin copper wire consisting of copper and the remainder Cu. （２）残部Ｃｕが純度９９．９９９ｗｔ％以上の純銅か
らなる特許請求の範囲第１項記載の銅細線。(2) The thin copper wire according to claim 1, wherein the remainder Cu is pure copper with a purity of 99.999 wt% or more. （３）真空又は非酸化性雰囲気で鋳造した、Ｃｒ０．１
〜２．５ｐｐｍと、Ｚｒ０．１〜９ｐｐｍ，Ａｇ０．１
〜９ｐｐｍ，Ｓｎ０．１〜９ｐｐｍの何れか１種又は２
種以上とを合計０．２〜９．５ｐｐｍ含み、残部Ｃｕか
らなる鋳塊を伸線加工と焼鈍処理を繰返して所定の線径
にするに当り、少なくとも最終加工率を７０〜９９．９
９％とし、これを焼鈍処理により２〜２０％の伸びとす
ることを特徴とする銅細線の製造法。(3) Cr0.1 cast in vacuum or non-oxidizing atmosphere
~2.5ppm, Zr0.1~9ppm, Ag0.1
~9ppm, Sn0.1~9ppm any one or two
When an ingot containing a total of 0.2 to 9.5 ppm of Cu and the remainder is Cu is repeatedly drawn and annealed to a predetermined wire diameter, the final processing rate is at least 70 to 99.9.
A method for manufacturing thin copper wire, characterized in that the elongation is 9% and the elongation is made 2 to 20% by annealing. （４）残部Ｃｕが９９．９９９ｗｔ％以上の純銅からな
る特許請求の範囲第３項記載の銅細線の製造法。(4) The method for manufacturing a thin copper wire according to claim 3, which is made of pure copper with a balance Cu of 99.999 wt% or more. （５）焼鈍処理後に、１〜５％の加工を加えて２〜２０
％の伸びとする特許請求の範囲第３項又は第４項記載の
銅細線の製造法。(5) After annealing, add 1-5% processing to 2-20%
% elongation of the copper wire according to claim 3 or 4.
JP62071173A 1987-03-25 1987-03-25 Fine copper wire and its production Pending JPS63238232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62071173A JPS63238232A (en) 1987-03-25 1987-03-25 Fine copper wire and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62071173A JPS63238232A (en) 1987-03-25 1987-03-25 Fine copper wire and its production

Publications (1)

Publication Number Publication Date
JPS63238232A true JPS63238232A (en) 1988-10-04

Family

ID=13453002

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPS63238232A (en)

Cited By (6)

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Publication number Priority date Publication date Assignee Title
US5077005A (en) * 1989-03-06 1991-12-31 Nippon Mining Co., Ltd. High-conductivity copper alloys with excellent workability and heat resistance
JPH0417214A (en) * 1990-05-10 1992-01-22 Sumitomo Electric Ind Ltd Electric wire conductive body for harness
CN104835797A (en) * 2015-03-23 2015-08-12 辽宁凯立尔电子科技有限公司 Copper-palladium-silver alloy bonding wire and method for preparing same
EP3349246A1 (en) * 2015-06-15 2018-07-18 Nippon Micrometal Corporation Bonding wire for semiconductor device
CN109402445A (en) * 2018-11-09 2019-03-01 上海理工大学 A kind of anti-oxidant acid bronze alloy bonding wire and preparation method thereof
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077005A (en) * 1989-03-06 1991-12-31 Nippon Mining Co., Ltd. High-conductivity copper alloys with excellent workability and heat resistance
JPH0417214A (en) * 1990-05-10 1992-01-22 Sumitomo Electric Ind Ltd Electric wire conductive body for harness
CN104835797A (en) * 2015-03-23 2015-08-12 辽宁凯立尔电子科技有限公司 Copper-palladium-silver alloy bonding wire and method for preparing same
CN104835797B (en) * 2015-03-23 2017-09-26 辽宁凯立尔电子科技有限公司 A kind of copper palladium-silver bonding wire and preparation method thereof
EP3349246A1 (en) * 2015-06-15 2018-07-18 Nippon Micrometal Corporation Bonding wire for semiconductor device
EP3282473A4 (en) * 2015-06-15 2018-09-19 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10137534B2 (en) 2015-06-15 2018-11-27 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10610976B2 (en) 2015-06-15 2020-04-07 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10737356B2 (en) 2015-06-15 2020-08-11 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device
CN109402445A (en) * 2018-11-09 2019-03-01 上海理工大学 A kind of anti-oxidant acid bronze alloy bonding wire and preparation method thereof

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