JPH11214425A - Gold alloy wire for bonding - Google Patents

Gold alloy wire for bonding

Info

Publication number
JPH11214425A
JPH11214425A JP10010926A JP1092698A JPH11214425A JP H11214425 A JPH11214425 A JP H11214425A JP 10010926 A JP10010926 A JP 10010926A JP 1092698 A JP1092698 A JP 1092698A JP H11214425 A JPH11214425 A JP H11214425A
Authority
JP
Japan
Prior art keywords
weight
wire
gold
alloy wire
gold alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10010926A
Other languages
Japanese (ja)
Other versions
JP3810200B2 (en
Inventor
Toshitaka Mimura
利孝 三村
Shin Takaura
伸 高浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP01092698A priority Critical patent/JP3810200B2/en
Publication of JPH11214425A publication Critical patent/JPH11214425A/en
Application granted granted Critical
Publication of JP3810200B2 publication Critical patent/JP3810200B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To restrain a gold alloy wire from breaking even if a semiconductor device is exposed to a severe environment of heat cycles by a method wherein one kind of Zn, Co, Mo, Cr is made to contain in high purity gold by a wt.% of a specially determined range, and also one kind of La, Eu, Be, Y, Ca is made to contain in a weight of a specially determined range. SOLUTION: A gold alloy wire for wire bonding of a semiconductor element is obtained by such formation that, for a raw material of high purity gold refined at least at 99.99 weight %, one kind of determined volume of Zn, Co, Mo, Cr is made to contain by 0.1 to 3.0 wt.% in co-existence with the kind out of determined amount of the second group elements, and also one kind of determined amount of La, Eu, Be, Y, Ca is made to contain in 1 to 100 weight ppm in co-existence with the kind of determined amount of the first group elements. By this formation, breaking of wire is suppressed even if a semiconductor device using a lead frame made of copper alloy is exposed to a severe heat cycle environment.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は半導体素子の電極と
外部リードを接続する為に使用する半導体素子のワイヤ
ボンディング用金合金線に関し、更に詳しくは金合金線
を用いて配線された半導体装置が熱衝撃や振動を受ける
環境にさらされても金合金線の断線を効果的に防止出来
るボンディング用金合金線に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gold alloy wire for wire bonding of a semiconductor element used for connecting an electrode of the semiconductor element to an external lead, and more particularly, to a semiconductor device wired using the gold alloy wire. The present invention relates to a gold alloy wire for bonding that can effectively prevent breakage of the gold alloy wire even when exposed to an environment subjected to thermal shock or vibration.

【０００２】[0002]

【従来の技術】従来から半導体装置に用いられるＩＣチ
ップ電極と外部リードを接続する線としては、純度９
９．９９重量％以上の高純度金に他の金属元素を微量含
有させた金合金線が信頼性に優れているとして多用され
ている。通常半導体装置は前記接続する方法として、金
合金線を用いた超音波併用熱圧着ボンディング法が主と
して用いられ、その後樹脂封止して半導体装置とされて
いる。2. Description of the Related Art A line connecting an IC chip electrode and an external lead conventionally used in a semiconductor device has a purity of 9%.
A gold alloy wire obtained by adding a trace amount of another metal element to high-purity gold of 9.99% by weight or more is widely used because of its excellent reliability. Usually, as a method for connecting the semiconductor device, an ultrasonic combined thermo-compression bonding method using a gold alloy wire is mainly used, and thereafter, the semiconductor device is sealed with a resin to form a semiconductor device.

【０００３】ここで超音波併用熱圧着ボンディング法に
より配線し、ループを形成した状態を図１に示す。１は
ＩＣチップ、２はＩＣチップ上のＡｌ電極、３は金合金
線、４はリードフレーム、５はファースト側接合点、６
はセカンド側接合点である。最近半導体装置は外部リー
ド材料として放熱性、コストを考慮して銅合金性のリー
ドフレームを用いることが多くなってきた。銅合金性の
リードフレームを用いた場合、封止用樹脂とリードフレ
ームの熱膨張係数の差が大きく、半導体装置の作動によ
る温度上昇によってループを形成した金合金線に外部応
力が加わり、とりわけ半導体装置が過酷な熱サイクル環
境に晒された場合、断線を生じ易くなるという問題があ
る。FIG. 1 shows a state in which wiring is performed by a thermocompression bonding method combined with ultrasonic waves to form a loop. 1 is an IC chip, 2 is an Al electrode on the IC chip, 3 is a gold alloy wire, 4 is a lead frame, 5 is a first junction, 6
Is the second-side junction. In recent years, a semiconductor device has often used a lead frame made of a copper alloy in consideration of heat dissipation and cost as an external lead material. When a copper alloy lead frame is used, the difference in thermal expansion coefficient between the sealing resin and the lead frame is large, and external stress is applied to the gold alloy wire that has formed a loop due to the temperature rise due to the operation of the semiconductor device. When the apparatus is exposed to a severe thermal cycle environment, there is a problem that disconnection easily occurs.

【０００４】又半導体装置の小型化、高密度化の要求が
高まる中で、ＩＣチップの多ピン化及びこれに伴う狭ピ
ッチ化が要求されている。多ピン化、狭ピッチ化を達成
するためには、樹脂封止する際にワイヤ流れが小さくル
ープ形状を安定させることが出来る金合金線が要求され
ている。これの対応として合金元素を大量添加すること
が考えられる。例えば特開昭５２−５１８６７号公報に
は金素材中にＮｉ，Ｆｅ，Ｃｏ，Ｃｒ，Ａｇのうち少な
くとも１種を４０〜５０００重量ppm 含有させて破断強
度を向上させることが提案されている。しかしながら破
断強度を向上させるだけでは最近の前記要求に対しては
未だ不十分である。[0004] In addition, as the demand for miniaturization and higher density of semiconductor devices is increasing, there is a demand for increasing the number of pins of the IC chip and consequently narrowing the pitch. In order to achieve a higher pin count and a narrower pitch, a gold alloy wire capable of stabilizing a loop shape with a small wire flow during resin sealing is required. To cope with this, it is conceivable to add a large amount of alloying elements. For example, Japanese Patent Application Laid-Open No. 52-51867 proposes improving the breaking strength by including at least one of Ni, Fe, Co, Cr and Ag in a gold material in an amount of 40 to 5000 ppm by weight. However, merely improving the breaking strength is still insufficient for the recent demand.

【０００５】[0005]

【発明が解決しようとする課題】本発明は上述したよう
な事情に鑑みてなされたものであり、その目的とすると
ころは銅合金製のリードフレームを用いた半導体装置が
過酷な熱サイクルの環境に晒された場合でも、断線を抑
制する効果が向上し、且つ樹脂封止する際のワイヤ流れ
を小さくすることが出来る金合金線を提供することであ
る。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device using a lead frame made of a copper alloy in a severe thermal cycle environment. An object of the present invention is to provide a gold alloy wire that can improve the effect of suppressing disconnection even when exposed to water, and that can reduce the wire flow during resin sealing.

【０００６】更に前記過酷な熱サイクル環境に晒された
場合の断線防止や樹脂封止する際にワイヤ流れが小さく
なるような金合金線にするために、金に合金元素を添加
すると振動破断性能が低下してくるという問題が生じて
くる。振動破断性能は半導体装置の樹脂封止前の試料運
搬時に振動による断線を防止出来る金合金線が要求され
ているものである。この為本発明においては、更に振動
破断性能に優れた金合金線を提供することをもう１つの
目的とする。[0006] Further, in order to prevent disconnection when exposed to the severe thermal cycle environment and to make a gold alloy wire that reduces the wire flow when sealing with a resin, an alloy element is added to gold to obtain a vibration rupture performance. The problem that the temperature decreases. Vibration rupture performance requires a gold alloy wire capable of preventing disconnection due to vibration during transportation of a sample before resin sealing of a semiconductor device. For this reason, another object of the present invention is to provide a gold alloy wire having further excellent vibration breaking performance.

【０００７】[0007]

【課題を解決するための手段】本発明者等が鋭意研究を
重ねた結果、Ｚｎ，Ｃｏ，Ｍｏ，Ｃｒ（以下「第１群」
という）のうち少なくとも１種の所定量とＬａ，Ｅｕ，
Ｂｅ，Ｙ，Ｃａ（以下「第２群」という）のうち少なく
とも１種の所定量を高純度金に含有させることにより、
前述の目的を達成しうることを知見し、本発明を完成す
るに至った。 （１）高純度金にＺｎ，Ｃｏ，Ｍｏ，Ｃｒのうち少なく
とも１種を０．１〜３．０重量％、Ｌａ，Ｅｕ，Ｂｅ，
Ｙ，Ｃａのうち少なくとも１種を１〜１００重量ppm 含
有させたことを特徴とする半導体素子のワイヤボンディ
ング用金合金線。 （２）高純度金にＺｎ，Ｃｏ，Ｍｏ，Ｃｒのうち少なく
とも１種を０．１〜３．０重量％、Ｌａ，Ｅｕ，Ｂｅ，
Ｙのうち少なくとも１種を１〜１００重量ppm 含有させ
たことを特徴とする半導体素子のワイヤボンディング用
金合金線。 （３）高純度金にＺｎ，Ｃｏ，Ｍｏ，Ｃｒのうち少なく
とも１種を０．１〜３．０重量％、Ｃａを１０〜１００
重量ppm 含有させたことを特徴とする半導体素子のワイ
ヤボンディング用金合金線。 （４）高純度金にＺｎ，Ｃｏ，Ｍｏ，Ｃｒのうち少なく
とも１種を０．１〜３．０重量％、ＣａとＬａ，Ｅｕ，
Ｂｅ，Ｙのうち少なくとも１種とをそれぞれ１重量ppm
以上かつその合計で１〜１００重量ppm 含有させたこと
を特徴とする半導体素子のワイヤボンディング用金合金
線。 （５）Ｂｉ，Ｙｂ，Ｓｂ，Ｍｇ，Ｉｎ，Ｒｕ，Ｉｒのう
ち少なくとも１種を１〜５００重量ppm 含有させたこと
を特徴とする上記（１）〜（４）記載の半導体素子のワ
イヤボンディング用金合金線。 （６）更にＰｄ，Ｐｔ，Ｃｕ，Ａｇのうち少なくとも１
種を０．０１〜２．０重量％含有させたことを特徴とす
る請求項１〜５記載の半導体素子のワイヤボンディング
用金合金線。The present inventors have made intensive studies and found that Zn, Co, Mo, Cr (hereinafter referred to as "first group").
), La, Eu,
By including a predetermined amount of at least one of Be, Y, and Ca (hereinafter, referred to as “second group”) in high-purity gold,
The inventors have found that the above object can be achieved, and have completed the present invention. (1) At least one of Zn, Co, Mo, and Cr is added to high purity gold in an amount of 0.1 to 3.0% by weight, and La, Eu, Be,
A gold alloy wire for wire bonding of a semiconductor element, wherein at least one of Y and Ca is contained in an amount of 1 to 100 ppm by weight. (2) At least one of Zn, Co, Mo, and Cr is added to high-purity gold in an amount of 0.1 to 3.0% by weight, and La, Eu, Be,
A gold alloy wire for semiconductor device wire bonding, wherein at least one of Y is contained in an amount of 1 to 100 ppm by weight. (3) At least one of Zn, Co, Mo, and Cr is 0.1 to 3.0% by weight and Ca is 10 to 100 in high purity gold.
A gold alloy wire for wire bonding of a semiconductor element, characterized by containing ppm by weight. (4) At least one of Zn, Co, Mo, and Cr is added to high-purity gold in an amount of 0.1 to 3.0% by weight, and Ca, La, Eu,
1 wt ppm of at least one of Be and Y
A gold alloy wire for wire bonding of a semiconductor element, wherein the total content of the alloy is 1 to 100 ppm by weight. (5) Wire bonding of the semiconductor element according to (1) to (4), wherein at least one of Bi, Yb, Sb, Mg, In, Ru, and Ir is contained in an amount of 1 to 500 ppm by weight. For gold alloy wire. (6) At least one of Pd, Pt, Cu, and Ag
6. The gold alloy wire for wire bonding of a semiconductor element according to claim 1, wherein the seed is contained in an amount of 0.01 to 2.0% by weight.

【０００８】[0008]

【発明の実施の形態】（１）組成 原料金 原料金としては少なくとも９９．９９重量％以上に精製
した高純度金を用いることが好ましい。更に好ましくは
９９．９９５重量％以上であり、最も好ましくは９９．
９９９重量％以上である。この為合金中の不可避不純物
は０．０１重量％未満が好ましい。更に好ましくは０．
００５重量％未満であり、最も好ましくは０．００１重
量％未満である。不可避不純物が少ない程有害元素を除
去出来るため信頼性が向上して好ましい。BEST MODE FOR CARRYING OUT THE INVENTION (1) Composition Original Charge It is preferable to use high-purity gold refined to at least 99.99% by weight or more as the original charge. It is more preferably at least 99.995% by weight, most preferably at least 99.99% by weight.
999% by weight or more. For this reason, the inevitable impurities in the alloy are preferably less than 0.01% by weight. More preferably, 0.
Less than 005% by weight, most preferably less than 0.001% by weight. It is preferable that the unavoidable impurities be as small as possible because the harmful elements can be removed and the reliability is improved.

【０００９】 〔Ｚｎ，Ｃｏ，Ｍｏ，Ｃｒ〕 （ａ）前記高純度金に所定量の第２群元素のうち少なく
とも１種との共存において、所定量のＺｎ，Ｃｏ，Ｍ
ｏ，Ｃｒのうち少なくとも１種を含有した組成とするこ
とにより前記課題を達成することが出来る。 （ｂ）前記共存組成において１〜１００重量ppm の第２
群元素のうち少なくとも１種と共存したＺｎ，Ｃｏ，Ｍ
ｏ，Ｃｒのうち少なくとも１種の含有量が０．１重量％
以上になると０．１重量％未満のものと対比して熱衝撃
破断率、振動破断率が大幅に低下するとともにワイヤ流
れ量も小さくなる。[Zn, Co, Mo, Cr] (a) In the presence of at least one of a predetermined amount of the second group element in the high-purity gold, a predetermined amount of Zn, Co, M
The above object can be achieved by using a composition containing at least one of o and Cr. (B) 1 to 100 ppm by weight of the second co-existing composition
Zn, Co, M coexisting with at least one of the group elements
The content of at least one of o and Cr is 0.1% by weight.
Above this, the thermal shock rupture rate and the vibration rupture rate are significantly reduced and the wire flow rate is smaller than that of less than 0.1% by weight.

【００１０】前記Ｚｎ，Ｃｏ，Ｍｏ，Ｃｒのうち少なく
とも１種の含有量が３．０重量％迄は前記効果を維持出
来るものの、３．０重量％を越えると金合金線の伸線加
工中断線が増加し伸線加工性が悪くなってきた。この為
該共存組成に於けるＺｎ，Ｃｏ，Ｍｏ，Ｃｒのうち少な
くとも１種の含有量は０．１〜３．０重量％と定めた。
好ましくは０．１〜２．０重量％である。The above effect can be maintained until the content of at least one of Zn, Co, Mo, and Cr is up to 3.0% by weight, but when the content exceeds 3.0% by weight, the drawing of the gold alloy wire is interrupted. The number of wires has increased and the drawability has become worse. Therefore, the content of at least one of Zn, Co, Mo, and Cr in the coexisting composition is determined to be 0.1 to 3.0% by weight.
Preferably it is 0.1 to 2.0% by weight.

【００１１】 〔Ｌａ，Ｅｕ，Ｂｅ，Ｙ，Ｃａ〕 （ａ）前記高純度金に所定量の第１群元素のうち少なく
とも１種との共存において、所定量のＬａ，Ｅｕ，Ｂ
ｅ，Ｙ，Ｃａのうち少なくとも１種を含有した組成とす
ることにより前記課題を達成することが出来る。 （ｂ）前記共存組成において０．１〜３．０重量％の第
１群元素のうち少なくとも１種と共存したＬａ，Ｅｕ，
Ｂｅ，Ｙ，Ｃａのうち少なくとも１種の含有量が１重量
ppm 以上になると１重量ppm 未満のものと対比して熱衝
撃破断率、振動破断率が大幅に低下するとともにワイヤ
流れ量も小さくなる。[La, Eu, Be, Y, Ca] (a) When the high-purity gold coexists with at least one of the predetermined amounts of the first group elements, a predetermined amount of La, Eu, B
The above object can be achieved by a composition containing at least one of e, Y, and Ca. (B) La, Eu, coexisting with at least one of the first group elements of 0.1 to 3.0% by weight in the coexisting composition.
The content of at least one of Be, Y, and Ca is 1 weight
If it is not less than 1 ppm, the thermal shock rupture rate and the vibration rupture rate will be significantly reduced and the wire flow will also be smaller than those of less than 1 ppm by weight.

【００１２】又前記Ｌａ，Ｅｕ，Ｂｅ，Ｙ，Ｃａのうち
少なくとも１種の含有量が１００重量ppm 迄は前記効果
を維持出来るものの、１００重量ppm を越えると、ボン
ディングする為のボール形成時にボールに引け巣が生じ
たり、ボール表面に酸化物が形成されたりして、ＩＣチ
ップ電極上へのボールの接合性が悪くなる。この為該共
存組成に於けるＬａ，Ｅｕ，Ｂｅ，Ｙ，Ｃａのうち少な
くとも１種の含有量は１〜１００重量ppm と定めた。好
ましくは１〜８０重量ppm である。The above effect can be maintained until the content of at least one of La, Eu, Be, Y, and Ca is up to 100 ppm by weight, but if it exceeds 100 ppm by weight, the ball is formed at the time of forming a ball for bonding. As a result, shrinkage cavities are formed on the surface of the ball, or an oxide is formed on the surface of the ball. Therefore, the content of at least one of La, Eu, Be, Y, and Ca in the coexisting composition is set to 1 to 100 ppm by weight. Preferably it is 1 to 80 ppm by weight.

【００１３】（ｃ）更に前記共存組成において所定量の
Ｌａ，Ｅｕ，Ｂｅ，Ｙ，Ｃａのうち少なくとも１種が次
の３種類の場合は、Ｃａを単独で１重量ppm 以上１０重
量ppm 未満含有する場合と対比して振動破断率が一段と
向上してくる。この為、前記共存組成において所定量の
Ｌａ，Ｅｕ，Ｂｅ，Ｙ，Ｃａのうち少なくとも１種が次
の３種類のうち何れか１つであることが好ましい。(C) When at least one of La, Eu, Be, Y and Ca in the coexisting composition is at least one of the following three types, Ca alone is contained in an amount of 1 to less than 10 ppm by weight. The vibration rupture rate is further improved in comparison with the case of performing the above. Therefore, it is preferable that at least one of the predetermined amounts of La, Eu, Be, Y, and Ca in the coexisting composition is any one of the following three types.

【００１４】ア）Ｌａ，Ｅｕ，Ｙ，Ｂｅのうち少なくと
も１種を１〜１００重量ppm イ）Ｃａを１０〜１００重量ppm ウ）Ｃａ及びＬａ，Ｅｕ，Ｙ，Ｂｅのうち少なくとも１
種をそれぞれ１重量ppm 以上かつその合計１〜１００重
量ppm 〔Ｙｂ，Ｂｉ，Ｓｂ，Ｍｇ，Ｉｎ，Ｒｕ，Ｉｒ〕 （ａ）前記高純度金に所定量の第１群元素のうち少なく
とも１種と所定量の第２群元素のうち少なくとも１種と
の共存においてＹｂ，Ｂｉ，Ｓｂ，Ｍｇ，Ｉｎ，Ｒｕ，
Ｉｒ（以下「第３群」という）のうち少なくとも１種を
１〜５００重量ppm 含有させた場合にも熱衝撃破断率、
振動破断率が大幅に低下するとともにワイヤ流れ量も小
さくなる。好ましくは１〜３００重量ppm である。A) 1 to 100 ppm by weight of at least one of La, Eu, Y and Be a) 10 to 100 ppm by weight of Ca c) at least one of Ca and La, Eu, Y and Be
1% by weight or more and 1 to 100% by weight of the total [Yb, Bi, Sb, Mg, In, Ru, Ir] (a) At least one of a predetermined amount of the first group elements in the high purity gold In the presence of Yb, Bi, Sb, Mg, In, Ru,
Even when at least one of Ir (hereinafter referred to as "the third group") is contained in an amount of 1 to 500 ppm by weight, the thermal shock rupture rate,
The vibration rupture rate is greatly reduced, and the wire flow is also reduced. Preferably it is 1 to 300 ppm by weight.

【００１５】（ｂ）前記所定量の第２群元素のうち少な
くとも１種を前記（ｃ）ア）〜ウ）項とすることが好
ましい。この場合、Ｃａを単独で１重量ppm 以上１０重
量ppm 未満含有する場合と対比して所定量の第３群元素
のうち少なくとも１種を含有しない場合と同様に振動破
断率が一段と向上してくる。 〔Ｐｄ，Ｐｔ，Ｃｕ，Ａｇ〕 （ａ）前記高純度金に所定量の第１群元素のうち少なく
とも１種と所定量の第２群元素のうち少なくとも１種と
の共存、又はそれに加えて所定量の第３群元素のうち少
なくとも１種との共存において、Ｐｄ，Ｐｔ，Ｃｕ，Ａ
ｇ（以下「第４群」という）のうち少なくとも１種を
０．０１〜２．０重量％含有させた場合にも、熱衝撃破
断率、振動破断率が大幅に低下するとともにワイヤ流れ
量も小さくなる。好ましくは０．０５〜１．５重量％で
ある。(B) It is preferable that at least one of the predetermined amounts of the second group elements is the above item (c). In this case, as compared with the case where Ca alone is contained in an amount of 1 wt ppm or more and less than 10 wt ppm, the vibration rupture rate is further improved as in the case where at least one of the predetermined amount of the third group element is not contained. . [Pd, Pt, Cu, Ag] (a) In the high-purity gold, at least one of the predetermined amount of the first group element and at least one of the predetermined amount of the second group element coexist, or in addition thereto. Pd, Pt, Cu, A in the presence of at least one of the third group elements in a predetermined amount
g (hereinafter, referred to as “fourth group”), when 0.01 to 2.0% by weight is contained, the thermal shock rupture rate and the vibration rupture rate are significantly reduced and the wire flow rate is also reduced. Become smaller. Preferably it is 0.05 to 1.5% by weight.

【００１６】（ｂ）前記所定量の第２群元素のうち少な
くとも１種を前記（ｃ）ア）〜ウ）項とすることが好
ましい。この場合、Ｃａを単独で１重量ppm 以上１０重
量ppm 未満含有する場合と対比して所定量の第４群元素
のうち少なくとも１種を含有しない場合と同様に振動破
断率が一段と向上してくる。 （２）金合金線の製造方法 本発明になる金合金線の好ましい製造方法を説明する。(B) It is preferable that at least one of the predetermined amount of the second group elements is the above item (c). In this case, as compared with the case where Ca alone is contained in an amount of 1 wt ppm or more and less than 10 wt ppm, the vibration rupture rate is further improved as in the case where at least one of the predetermined amount of the fourth group element is not contained. . (2) Manufacturing method of gold alloy wire A preferable manufacturing method of the gold alloy wire according to the present invention will be described.

【００１７】前記高純度金に所定量の元素を添加し、真
空溶解炉で溶解した後インゴットに鋳造する。インゴッ
トに溝ロール、伸線機を用いた冷間加工と中間アニール
を施し、最終冷間加工により直径１０〜１００μｍの細
線とした後最終アニールを施すものである。 （３）用途 本発明になる半導体素子のワイヤボンディング用金合金
線は、半導体装置の実装に際して、ＩＣチップ等の半導
体素子をリードフレームに接続する際、超音波併用熱圧
着ボンディング法を用いた配線材料として好ましく用い
られる。半導体装置はこの後樹脂封止をして仕上げられ
る。A predetermined amount of element is added to the high-purity gold, melted in a vacuum melting furnace, and then cast into an ingot. The ingot is subjected to cold working and intermediate annealing using a groove roll and a wire drawing machine, and is finally subjected to final annealing after forming into a thin wire having a diameter of 10 to 100 μm by final cold working. (3) Applications The gold alloy wire for wire bonding of a semiconductor element according to the present invention is used for connecting a semiconductor element such as an IC chip to a lead frame at the time of mounting a semiconductor device, using a thermocompression bonding method combined with ultrasonic waves. It is preferably used as a material. Thereafter, the semiconductor device is finished by resin sealing.

【００１８】特には銅製リードフレームを用いた半導体
装置更には、ＩＣチップの狭ピッチ化に対応する際に好
ましく用いられる。In particular, it is preferably used for a semiconductor device using a copper lead frame, and also when the pitch of an IC chip is reduced.

【００１９】[0019]

【実施例】表１〜９に示す実施例及び比較例について説
明する。 （実施例１）純度９９．９９９重量％の高純度金に所定
量のＺｎ，Ｌａを添加し真空溶解炉で溶解した後、鋳造
して表１に示す組成の金合金インゴットを得、これに溝
ロール、伸線機を用いた冷間加工と中間アニールを施
し、最終冷間加工により直径３０μｍとし、伸び率４％
となるように最終アニールを行い更に表面に潤滑剤を被
覆して金合金線に仕上げた。EXAMPLES Examples and comparative examples shown in Tables 1 to 9 will be described. Example 1 A predetermined amount of Zn and La was added to high-purity gold having a purity of 99.999% by weight, melted in a vacuum melting furnace, and then cast to obtain a gold alloy ingot having the composition shown in Table 1. Cold working using a groove roll and a wire drawing machine and intermediate annealing are performed, and the final cold working is performed to a diameter of 30 μm, and the elongation percentage is 4%.
The final annealing was carried out so that the surface was coated with a lubricant to finish the gold alloy wire.

【００２０】該金合金線を全自動ワイヤボンダ（新川株
式会社製ＵＴＣ−１００型）を用いてＩＣチップのＡｌ
電極と銅合金リードフレームを超音波併用熱圧着ボンデ
ィング法でピン数９６個の試料（この樹脂封止前の試料
を「ボンディング試料」という。）を作成した。次いで
該ボンディング試料をエポキシ樹脂で樹脂封止した半導
体試料（樹脂封止後の試料を「半導体試料」という。）
を作成した。これらの試料を用いて次の試験を行った。 〔熱サイクル試験〕前記半導体試料を熱サイクル試験機
を用いて、−６５℃×３０分と１５０℃×３０分の温度
環境下に３０００サイクル晒し、加速試験を行った。そ
の後封止用樹脂のみを硝酸液を用いて溶解して配線され
たループ状金合金線を露出させた。９６本の配線につい
て断線の有無を走査電顕を用いて測定し、断線発生本数
の割合を熱サイクル破断率（％）として表１に示した。 〔ワイヤ流れ量〕前記半導体試料を軟Ｘ線装置を用いて
ワイヤ流れ量を測定した。The gold alloy wire was converted into an Al chip of an IC chip by using a fully automatic wire bonder (UTC-100 manufactured by Shinkawa Co., Ltd.).
A sample having 96 pins (the sample before resin sealing is referred to as a “bonding sample”) was prepared by thermocompression bonding using an electrode and a copper alloy lead frame together with ultrasonic waves. Next, a semiconductor sample in which the bonding sample is sealed with an epoxy resin (the sample after resin sealing is referred to as a “semiconductor sample”).
It was created. The following tests were performed using these samples. [Thermal Cycle Test] The semiconductor sample was subjected to 3000 cycles in a temperature environment of −65 ° C. × 30 minutes and 150 ° C. × 30 minutes using a thermal cycle tester to perform an acceleration test. Thereafter, only the sealing resin was dissolved using a nitric acid solution to expose the wired gold alloy wire. The presence or absence of disconnection was measured using a scanning electron microscope for 96 wirings, and the ratio of the number of disconnections occurring is shown in Table 1 as a thermal cycle rupture rate (%). [Wire Flow] The semiconductor sample was measured for wire flow using a soft X-ray apparatus.

【００２１】図２を用いてワイヤ流れ量の測定方法を説
明する。５はファースト側接合点、６はセカンド側接合
点、３は配線された金合金線、７は５，６を結ぶ仮想直
線、Ｌは金合金線３と仮想直線７との最大かい離量であ
り、仮想直線７を真上から観察してＬを測定した。２４
個のＬの平均値をワイヤ流れ量として表１に示した。 〔振動試験〕前記ボンディング試料を用いた振動試験方
法を図３を用いて説明する。A method for measuring the wire flow will be described with reference to FIG. 5 is a first-side junction, 6 is a second-side junction, 3 is a wired gold alloy wire, 7 is a virtual straight line connecting 5 and 6, and L is the maximum distance between the gold alloy wire 3 and the virtual straight line 7. L was measured by observing the virtual straight line 7 from directly above. 24
Table 1 shows the average value of L pieces as the wire flow rate. [Vibration Test] A vibration test method using the bonding sample will be described with reference to FIG.

【００２２】１１はＩＣチップ、１２はＡｌ電極、１３
は金合金線、１４，１４′はリードフレーム、１５は鉄
製台、１６，１６′はリードフレーム固定用磁石、１７
は振動子である。リードフレーム１４，１４′をリード
フレーム固定用磁石１６，１６′で固定し、ＩＣチップ
１１を搭載した部分を振動子１７で上下方向（矢印方
向）に振動させた。11 is an IC chip, 12 is an Al electrode, 13
Is a gold alloy wire, 14 and 14 'are lead frames, 15 is an iron base, 16 and 16' are lead frame fixing magnets, 17
Is a vibrator. The lead frames 14, 14 'were fixed with the lead frame fixing magnets 16, 16', and the portion on which the IC chip 11 was mounted was vibrated by the vibrator 17 in the vertical direction (the direction of the arrow).

【００２３】周波数１００Hz、上下振動合計０．４mm、
振動数２００００回、振動させた後、４０倍の実体顕微
鏡を用いて金合金線１３の破断数を測定した。ボンディ
ング試料３個分（金合金線２８８本）測定し破断数の割
合を振動破断率（％）として表１に示した。 （実施例２〜８７）（比較例１〜８） 金合金線の組成を表１〜７に示すようにしたこと以外は
実施例１と同様にして金合金線に仕上げ、同様の試験を
行ってその結果を表１〜７に示した。Frequency 100 Hz, vertical vibration total 0.4 mm,
After vibrating at a frequency of 20,000 times, the number of breaks of the gold alloy wire 13 was measured using a stereo microscope of 40 times. Three bonding samples (288 gold alloy wires) were measured, and the ratio of the number of breaks was shown in Table 1 as a vibration break ratio (%). (Examples 2 to 87) (Comparative Examples 1 to 8) A gold alloy wire was finished in the same manner as in Example 1 except that the composition of the gold alloy wire was as shown in Tables 1 to 7, and a similar test was performed. The results are shown in Tables 1 to 7.

【００２４】[0024]

【表１】 [Table 1]

【００２５】[0025]

【表２】 [Table 2]

【００２６】[0026]

【表３】 [Table 3]

【００２７】[0027]

【表４】 [Table 4]

【００２８】[0028]

【表５】 [Table 5]

【００２９】[0029]

【表６】 [Table 6]

【００３０】[0030]

【表７】 [Table 7]

【００３１】（比較例９〜１２）金合金線の組成を表８
に示すようにしたこと以外は実施例１と同様にして金合
金線に仕上げる伸線加工を行ったところ、断線回数が実
施例１〜８７、比較例１〜８のものが許容される断線回
数の範囲内であるのに対して許容される断線回数の２倍
以上であった。この状況を表８に示す。(Comparative Examples 9 to 12) Table 8 shows the composition of the gold alloy wire.
When the wire drawing was performed to finish the gold alloy wire in the same manner as in Example 1 except that it was made as shown in the above, the number of times of disconnection was acceptable for Examples 1 to 87 and Comparative Examples 1 to 8. Was twice or more the allowable number of disconnections. Table 8 shows this situation.

【００３２】[0032]

【表８】 [Table 8]

【００３３】（比較例１３〜１４）金合金線の組成を表
７に示すようにしたこと以外は実施例１と同様にして金
合金線に仕上げた。該金合金線を全自動ワイヤボンダ
（新川株式会社製ＵＴＣ−１００型）を用いてボール形
成を行ったところ、実施例１〜８７、比較例１〜８のも
のには発生がみられなかったボール引け巣が生じた。こ
の状況を表９に示す。(Comparative Examples 13 and 14) A gold alloy wire was finished in the same manner as in Example 1 except that the composition of the gold alloy wire was as shown in Table 7. When the gold alloy wire was formed into a ball by using a fully automatic wire bonder (model UTC-100 manufactured by Shinkawa Co., Ltd.), no ball was found in Examples 1 to 87 and Comparative Examples 1 to 8. A shrinkage nest occurred. This situation is shown in Table 9.

【００３４】[0034]

【表９】 [Table 9]

【００３５】（試験結果） （１）高純度金にＺｎ，Ｃｏ，Ｍｏ，Ｃｒ（第１群）の
うち少なくとも１種を０．１〜３．０重量％、Ｌａ，Ｅ
ｕ，Ｂｅ，Ｙ，Ｃａ（第２群）のうち少なくとも１種を
１〜１００重量ppm 共存して含有した組成である実施例
１〜６７は、第１群、第２群の何れか一方を含有しない
比較例１〜８と対比して、加速試験に於ける熱サイクル
破断率が４７〜７２％に対して０〜４２％、ワイヤ流れ
量が２９９〜３２２μｍに対して１９１〜２５８μｍと
何れも優れた効果を示した。(Test Results) (1) At least one of Zn, Co, Mo, and Cr (first group) was added to high-purity gold in an amount of 0.1 to 3.0% by weight, and La and E were used.
Examples 1 to 67, which are compositions containing at least one of u, Be, Y, and Ca (the second group) in the coexistence of 1 to 100 ppm by weight, use any one of the first group and the second group. Compared with Comparative Examples 1 to 8 which do not contain, the thermal cycle rupture rate in the accelerated test is 0 to 42% for 47 to 72%, and the wire flow rate is 191 to 258 μm for 299 to 322 μm. Excellent effect was shown.

【００３６】又、振動破断率は１２〜３９％に対して０
〜１４％と同等若しくはそれ以上の優れた効果を示し
た。 （２）この中でも第２群元素のうち少なくとも１種が次
の３種類のうち何れか１つである場合は、Ｃａのみを１
〜１０重量ppm 未満含有する実施例２４，２５，４６，
５５と対比して振動破断率が１１〜１４％に対して０〜
５％と優れた効果を示す様になる。この為共存元素とし
ての第２群元素のうち少なくとも１種は次の３種類のう
ち何れか１つであることが好ましい。The vibration rupture rate is 0% for 12 to 39%.
An excellent effect equivalent to or higher than １４14% was shown. (2) Among these, when at least one of the second group elements is any one of the following three kinds, only Ca is set to 1
Examples 24, 25, 46, containing less than 10 ppm by weight
Compared with 55, the vibration rupture rate is 0
It shows an excellent effect of 5%. For this reason, at least one of the second group elements as a coexisting element is preferably any one of the following three types.

【００３７】ア）Ｌａ，Ｅｕ，Ｙ，Ｂｅのうち少なくと
も１種を１〜１００重量ppm イ）Ｃａを１０〜１００重量ppm ウ）Ｃａ及びＬａ，Ｅｕ，Ｙ，Ｂｅのうち少なくとも１
種をそれぞれ１重量ppm 以上、かつその合計１〜１００
重量ppm （３）更に第３群元素のうち少なくとも１種を１〜５０
０重量ppm 含有させた実施例６８〜７８においても比較
例と対比して、熱サイクル破断率が１０〜３２％、ワイ
ヤ流れ量が１９１〜２２９μｍ、振動破断率が０％と優
れた効果を示すことがわかる。 （４）前記高純度金に所定量の第１群元素のうち少なく
とも１種と所定量の第２群元素のうち少なくとも１種と
の共存、又はそれに加えて所定量の第３群元素のうち少
なくとも１種との共存において、第４群元素のうち少な
くとも１種を０．０１〜２．０重量％含有させた実施例
７９〜８７においても、比較例と対比して、熱サイクル
破断率が１２〜３０％、ワイヤ流れ量が１９７〜２２５
μｍ、振動破断率が０〜３％と優れた効果を示すことが
わかる。 （５）高純度金に所定量の第１群元素のうち少なくとも
１種を含有するものの、本発明の必須成分である所定量
の第２群元素を含有しない比較例１，３，５，７は加速
試験に於ける熱サイクル破断率が４７〜５２％、ワイヤ
流れ量が２９９〜３２２μｍであり本願の構成である実
施例１〜８７の方が優れていることがわかる。 （６）高純度金に所定量の第２群元素のうち少なくとも
１種を含有するものの、本発明の必須成分である所定量
の第１群元素を含有しない比較例２，４，６，８は加速
試験に於ける熱サイクル破断率が６５〜７２％、ワイヤ
流れ量が３０２〜３２９μｍ、振動破断率は３５〜３９
％であり本願の構成である実施例１〜８７の方が優れて
いることがわかる。A) 1 to 100 ppm by weight of at least one of La, Eu, Y and Be a) 10 to 100 ppm by weight of Ca) c) At least one of Ca and La, Eu, Y and Be
The seeds are each 1 ppm by weight or more, and the total is 1 to 100
(3) In addition, at least one of the third group elements is 1 to 50
Also in Examples 68 to 78 containing 0 ppm by weight, as compared with the comparative examples, excellent effects were obtained such that the thermal cycle rupture rate was 10 to 32%, the wire flow rate was 191 to 229 μm, and the vibration rupture rate was 0%. You can see that. (4) In the high-purity gold, at least one of the predetermined amount of the first group element and at least one of the predetermined amount of the second group element coexist, or in addition thereto, the predetermined amount of the third group element In the coexistence with at least one kind, even in Examples 79 to 87 in which at least one of the fourth group elements was contained at 0.01 to 2.0% by weight, the thermal cycle rupture rate was lower than that of the comparative example. 12-30%, wire flow 197-225
It can be seen that an excellent effect is obtained when the vibration rupture rate is 0 to 3%. (5) Comparative Examples 1, 3, 5, and 7 which contain at least one of a predetermined amount of the first group element in high purity gold but do not contain a predetermined amount of the second group element which is an essential component of the present invention. Shows that the thermal cycle rupture rate in the accelerated test is 47 to 52% and the wire flow rate is 299 to 322 μm, and it can be seen that Examples 1 to 87 having the configuration of the present invention are superior. (6) Comparative Examples 2, 4, 6, and 8 that contain at least one of the predetermined amount of the second group elements in high-purity gold but do not contain the predetermined amount of the first group elements, which is an essential component of the present invention. Indicates that the thermal cycle rupture rate in the accelerated test is 65 to 72%, the wire flow rate is 302 to 329 μm, and the vibration rupture rate is 35 to 39.
%, And it is understood that Examples 1 to 87 having the configuration of the present application are more excellent.

【００３８】[0038]

【発明の効果】本発明により高純度金にＺｎ，Ｃｏ，Ｍ
ｏ，Ｃｒのうち少なくとも１種を０．１〜３．０重量
％、Ｌａ，Ｅｕ，Ｂｅ，Ｙ，Ｃａのうち少なくとも１種
を１〜１００重量ppm 含有させた組成を有する半導体素
子ボンディング用金合金線によれば、銅合金製のリード
フレームを用いた半導体装置が過酷な熱サイクルの環境
に晒された場合でも、断線を抑制する効果が向上し、樹
脂封止する際のワイヤ流れを小さくすることが出来、更
には振動破断性能が低下することなく向上させることも
出来る。前記含有成分に加えて所定量のＹｂ，Ｂｉ，Ｓ
ｂ，Ｍｇ，Ｉｎ，Ｒｕ，Ｉｒのうち少なくとも１種又は
それに加えて所定量のＰｄ，Ｐｔ，Ｃｕ，Ａｇのうち少
なくとも１種を含有した場合においても同様の効果を示
す。According to the present invention, Zn, Co, M can be added to high purity gold.
A semiconductor element bonding metal having a composition containing 0.1 to 3.0% by weight of at least one of o and Cr and 1 to 100% by weight of at least one of La, Eu, Be, Y and Ca. According to the alloy wire, even when a semiconductor device using a lead frame made of a copper alloy is exposed to a severe thermal cycle environment, the effect of suppressing disconnection is improved, and the wire flow during resin sealing is reduced. In addition, the vibration breaking performance can be improved without lowering. A predetermined amount of Yb, Bi, S
A similar effect is exhibited when at least one of b, Mg, In, Ru, and Ir or, in addition, at least one of Pd, Pt, Cu, and Ag is contained in a predetermined amount.

【図面の簡単な説明】[Brief description of the drawings]

【図１】ワイヤボンディングされた半導体素子の例を示
す。FIG. 1 shows an example of a semiconductor device which is wire-bonded.

【図２】ワイヤ流れ量の測定を説明する図。FIG. 2 is a view for explaining measurement of a wire flow amount.

【図３】ボンディング試料の振動試験方法を説明する
図。FIG. 3 is a diagram illustrating a vibration test method for a bonding sample.

【符号の説明】[Explanation of symbols]

３…金合金線 ５…ファースト側接合点 ６…セカンド側接合点 ７…５，６を結ぶ仮想直線 3: Gold alloy wire 5: First side junction 6: Second side junction 7: Virtual straight line connecting 5, 6

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】 高純度金にＺｎ，Ｃｏ，Ｍｏ，Ｃｒのう
ち少なくとも１種を０．１〜３．０重量％、Ｌａ，Ｅ
ｕ，Ｂｅ，Ｙ，Ｃａのうち少なくとも１種を１〜１００
重量ppm 含有させたことを特徴とする半導体素子のワイ
ヤボンディング用金合金線。1. High-purity gold containing at least one of Zn, Co, Mo, and Cr in an amount of 0.1 to 3.0% by weight, La, E
u, Be, Y, Ca, at least one of 1 to 100
A gold alloy wire for wire bonding of a semiconductor element, characterized by containing ppm by weight. 【請求項２】 高純度金にＺｎ，Ｃｏ，Ｍｏ，Ｃｒのう
ち少なくとも１種を０．１〜３．０重量％、Ｌａ，Ｅ
ｕ，Ｂｅ，Ｙのうち少なくとも１種を１〜１００重量pp
m 含有させたことを特徴とする半導体素子のワイヤボン
ディング用金合金線。2. High-purity gold containing at least one of Zn, Co, Mo, and Cr in an amount of 0.1 to 3.0% by weight, La, E
u, Be, Y, at least one of 1 to 100 weight pp
A gold alloy wire for wire bonding of a semiconductor element, characterized by containing m. 【請求項３】 高純度金にＺｎ，Ｃｏ，Ｍｏ，Ｃｒのう
ち少なくとも１種を０．１〜３．０重量％、Ｃａを１０
〜１００重量ppm 含有させたことを特徴とする半導体素
子のワイヤボンディング用金合金線。3. High-purity gold containing at least one of Zn, Co, Mo, and Cr in an amount of 0.1 to 3.0% by weight and Ca in an amount of 10 to 3.0% by weight.
A gold alloy wire for wire bonding of a semiconductor element, characterized in that it contains about 100 ppm by weight. 【請求項４】 高純度金にＺｎ，Ｃｏ，Ｍｏ，Ｃｒのう
ち少なくとも１種を０．１〜３．０重量％、ＣａとＬ
ａ，Ｅｕ，Ｂｅ，Ｙのうち少なくとも１種とをそれぞれ
１重量ppm 以上かつその合計で１〜１００重量ppm 含有
させたことを特徴とする半導体素子のワイヤボンディン
グ用金合金線。4. High purity gold containing at least one of Zn, Co, Mo, and Cr in an amount of 0.1 to 3.0% by weight, and Ca and L
A gold alloy wire for semiconductor device wire bonding, wherein at least one of a, Eu, Be, and Y is contained in an amount of 1 ppm by weight or more and a total of 1 to 100 ppm by weight. 【請求項５】 Ｂｉ，Ｙｂ，Ｓｂ，Ｍｇ，Ｉｎ，Ｒｕ，
Ｉｒのうち少なくとも１種を１〜５００重量ppm 含有さ
せたことを特徴とする請求項１〜４記載の半導体素子の
ワイヤボンディング用金合金線。5. Bi, Yb, Sb, Mg, In, Ru,
5. The gold alloy wire for wire bonding of a semiconductor element according to claim 1, wherein at least one of Ir is contained in an amount of 1 to 500 ppm by weight. 【請求項６】 更にＰｄ，Ｐｔ，Ｃｕ，Ａｇのうち少な
くとも１種を０．０１〜２．０重量％含有させたことを
特徴とする請求項１〜５記載の半導体素子のワイヤボン
ディング用金合金線。6. The gold for wire bonding of a semiconductor device according to claim 1, further comprising 0.01 to 2.0% by weight of at least one of Pd, Pt, Cu, and Ag. Alloy wire.
JP01092698A 1998-01-23 1998-01-23 Gold alloy wire for wire bonding Expired - Fee Related JP3810200B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP01092698A JP3810200B2 (en) 1998-01-23 1998-01-23 Gold alloy wire for wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01092698A JP3810200B2 (en) 1998-01-23 1998-01-23 Gold alloy wire for wire bonding

Publications (2)

Publication Number Publication Date
JPH11214425A true JPH11214425A (en) 1999-08-06
JP3810200B2 JP3810200B2 (en) 2006-08-16

Family

ID=11763854

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3810200B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023029A (en) * 2001-07-09 2003-01-24 Tanaka Electronics Ind Co Ltd Gold wire for connecting semiconductor element and manufacturing method therefor
JP2006032643A (en) * 2004-07-15 2006-02-02 Sumitomo Bakelite Co Ltd Semiconductor unit
JP2006351700A (en) * 2005-06-14 2006-12-28 Mitsubishi Materials Corp Gold alloy wire for bonding wire having high initial junction property, high junction reliability, high circularity of compression bonding ball, high linearity and high resin flow resistance
JP2006351701A (en) * 2005-06-14 2006-12-28 Mitsubishi Materials Corp Gold alloy wire for bonding wire having high initial junction property, high junction reliability, high circularity of compression bonding ball, high linearity, high resin flow resistance and low specific resistance
US7678999B2 (en) * 2005-06-14 2010-03-16 Tanaka Denshi Kogyo K.K. Gold alloy wire for bonding wire having high bonding reliability, high roundness of compression ball, high straightness and high resin flowability resistance

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023029A (en) * 2001-07-09 2003-01-24 Tanaka Electronics Ind Co Ltd Gold wire for connecting semiconductor element and manufacturing method therefor
JP4513440B2 (en) * 2004-07-15 2010-07-28 住友ベークライト株式会社 Semiconductor device
JP2006032643A (en) * 2004-07-15 2006-02-02 Sumitomo Bakelite Co Ltd Semiconductor unit
US7857189B2 (en) 2005-06-14 2010-12-28 Tanaka Denshi Kogyo K.K. Gold alloy wire for bonding wire having high initial bondability, high bonding reliability, high roundness of compression ball, high straightness, and high resin flowability resistance
US7678999B2 (en) * 2005-06-14 2010-03-16 Tanaka Denshi Kogyo K.K. Gold alloy wire for bonding wire having high bonding reliability, high roundness of compression ball, high straightness and high resin flowability resistance
JP2006351701A (en) * 2005-06-14 2006-12-28 Mitsubishi Materials Corp Gold alloy wire for bonding wire having high initial junction property, high junction reliability, high circularity of compression bonding ball, high linearity, high resin flow resistance and low specific resistance
JP2006351700A (en) * 2005-06-14 2006-12-28 Mitsubishi Materials Corp Gold alloy wire for bonding wire having high initial junction property, high junction reliability, high circularity of compression bonding ball, high linearity and high resin flow resistance
JP4726206B2 (en) * 2005-06-14 2011-07-20 田中電子工業株式会社 Gold alloy wire for bonding wire with high initial bondability, high bond reliability, high roundness of crimped ball, high straightness, high resin flow resistance and low specific resistance
JP4726205B2 (en) * 2005-06-14 2011-07-20 田中電子工業株式会社 Gold alloy wire for bonding wire with high initial bondability, high bond reliability, high roundness of crimped ball, high straightness and high resin flow resistance
KR101087526B1 (en) * 2005-06-14 2011-11-28 타나카 덴시 코오교오 카부시키가이샤 Gold alloy wire for use as bonding wire exhibiting high initial bonding capability, high bonding reliability, high circularity of press bonded ball, high straight advancing property, high resin flow resistance and low specific resistance
KR101087527B1 (en) * 2005-06-14 2011-11-28 타나카 덴시 코오교오 카부시키가이샤 Gold alloy wire for use as bonding wire exhibiting high bonding reliability, high circularity of press bonded ball, high straight advancing property and high resin flow resistance
KR101093462B1 (en) * 2005-06-14 2011-12-13 타나카 덴시 코오교오 카부시키가이샤 Gold alloy wire for use as bonding wire exhibiting high initial bonding capability, high bonding reliability, high circularity of press bonded ball, high straight advancing property and high resin flow resistance
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