JP4117973B2 - Gold alloy wire for bonding - Google Patents

Gold alloy wire for bonding Download PDF

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Publication number
JP4117973B2
JP4117973B2 JP13037799A JP13037799A JP4117973B2 JP 4117973 B2 JP4117973 B2 JP 4117973B2 JP 13037799 A JP13037799 A JP 13037799A JP 13037799 A JP13037799 A JP 13037799A JP 4117973 B2 JP4117973 B2 JP 4117973B2
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Japan
Prior art keywords
ppm
weight
alloy wire
gold alloy
bonding
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Expired - Fee Related
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JP13037799A
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Japanese (ja)
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JP2000357706A (en
Inventor
伸 高浦
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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Priority to JP13037799A priority Critical patent/JP4117973B2/en
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Publication of JP4117973B2 publication Critical patent/JP4117973B2/en
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Description

【０００１】
【発明の属する技術分野】
本発明は半導体素子のボンディングワイヤおよびバンプ形成用として有用な半導体素子ボンディング用金合金線に関する。
【０００２】
【従来の技術】
従来から半導体装置に用いられるＩＣチップ電極と外部リードを接続する線としては、純度９９．９９重量％以上の高純度金に他の金属元素を微量含有させた金合金線が信頼性に優れているとして多用されている。
通常半導体装置は前記接続する方法として、金合金線を用いた超音波併用熱圧着ボンディング法が主として用いられ、その後樹脂封止して半導体装置とされている。
【０００３】
ここで超音波併用熱圧着ボンディング法により配線し、ループを形成した状態を図１に示す。１はＩＣチップ、２はＩＣチップ上のＡｌ電極、３は金合金線、４はリードフレーム、５はファースト側接合点、６はセカンド側接合点である。最近半導体装置は動作電源や外部環境によって加熱され、高温に晒されて使用されることが多く、ボンディングワイヤには高温で長時間保持しても接合劣化が小さいことが求められている。この為、従来から高温に保持した後のプル強度劣化に有効であるとして所定の金合金組成が提案されている。例えば特開平１０−４１１５号公報にはワイヤボンディングした試料を２００℃で１００時間保持した後のプル強度に優れているとしてＣｏ，Ｇｅ等を含有した組成の金合金線が開示されている。また、特開平２−２１５１４０号公報にはワイヤボンディングした試料を２５０℃で９００分保持した後のシェア強度に優れているとしてＭｎ等を含有した組成の金合金線が開示されている。
【０００４】
一方前記高温に保持した後の接合性を向上するような金合金線にするために、金に合金元素を添加すると振動破断性能が低下してくるという問題が生じてくる。該振動破断性能は半導体装置の樹脂封止前の試料運搬時に振動による断線を防止出来る性能として金合金線に要求されるものである。
【０００５】
【発明が解決しようとする課題】
ここで従来から接合性の信頼性を向上させようとするとボール真球度、振動破断率、ＩＣチップの割れ性の何れかに問題が生じると共に、最近では高温で更に長時間の環境に保持した後の更なる接合性の信頼性の向上が求められている。前記した金合金線に於いても前述の要求に対して未だ不十分である。
【０００６】
本発明は上述したような事情に鑑みてなされたものであり、その目的とするところは高温で長時間の環境に保持した後の接合性の信頼性が向上すると共に、ボール真球度に優れ、振動破断率が小さく、ＩＣチップの割れが少ない金合金線を提供する事にある。
【０００７】
【課題を解決するための手段】
本発明者等が鋭意研究を重ねた結果、所定量のＣｏ，Ｚｎ（第１群元素）のうち少なくとも１種と所定量のＭｎと所定量のＬａ，Ｙ，Ｇｄ，Ｂｅ，Ｃａ，Ｅｕ（第２群元素）のうち少なくとも１種を高純度金に含有させることにより、あるいは所定量のＣｏと所定量のＭｎを高純度金に含有させることにより、前述の目的を達成しうることを知見し、本発明を完成するに至った。
【０００８】
（１）Ｃｏ，Ｚｎのうち少なくとも１種を１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 及びＬａ，Ｙ，Ｇｄ，Ｂｅ，Ｃａ，Ｅｕのうち少なくとも１種を１〜４００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。
（２）Ｃｏ，Ｚｎのうち少なくとも１種を１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 及びＬａ，Ｙ，Ｇｄ，Ｂｅ，Ｅｕのうち少なくとも１種を１〜４００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。
【０００９】
（３）Ｃｏ，Ｚｎのうち少なくとも１種を１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 及びＣａを１０〜４００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。
（４）Ｃｏ，Ｚｎのうち少なくとも１種を１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 、Ｃａ及びＬａ，Ｙ，Ｇｄ，Ｂｅ，Ｅｕのうち少なくとも１種を各々５重量ppm 以上且つその合計で１０〜４００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。
（５）Ｃｏを１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。
（６）更にＰｄ，Ｐｔ，Ｃｕ，Ａｇ，Ｎｉのうち少なくとも１種を０．０１〜２．０重量％含有することを特徴とする上記（１）〜（５）の半導体素子ボンディング用金合金線。
【００１０】
本発明の半導体素子ボンディング用金合金線は、ボール真球度、振動破断率、ＩＣチップ割れと共に、特に高温接合性に優れているので、ワイヤボンディング用のみならず、バンプ形成用に用いても優れており、本発明はバンプ形成用を含むものである。
【００１１】
【発明の実施の形態】
（１）原料金
原料金としては少なくとも９９．９９重量％以上に精製した高純度金を用いることが好ましい。更に好ましくは９９．９９５重量％以上であり、最も好ましくは９９．９９９重量％以上である。この為合金中の不可避不純物は０．０１重量％未満が好ましい。更に好ましくは０．００５重量％未満であり、最も好ましくは０．００１重量％未満である。不可避不純物が少ない程有害元素を除去出来るため信頼性が向上して好ましい。
【００１２】
（２）〔Ｃｏ，Ｚｎ〕
ａ）前記高純度金に所定量のＭｎと所定量の第２群元素のうち少なくとも１種との共存において、所定量のＣｏ，Ｚｎのうち少なくとも１種を含有した組成とすることにより、あるいは前記高純度金に所定量のＭｎとの共存において所定量のＣｏを含有した組成とすることにより、前記課題を達成することが出来る。
ｂ）前記共存組成において、１〜１０００重量ppm のＭｎと１〜４００重量ppm の第２群元素のうち少なくとも１種と共存したＣｏ，Ｚｎのうち少なくとも１種、あるいは１〜１０００ppm のＭｎと共存したＣｏの含有量が１重量ppm 以上になると、これを含有しないものと対比して高温接合性が向上してくる。前記Ｃｏ，Ｚｎのうち少なくとも１種の含有量が１．０重量％迄は前記効果を維持出来るものの、１．０重量％を越えるとＩＣチップの割れが生じてくるが、本発明はそのうち１０００重量ppm 未満の場合に向けられている。そこで、該共存組成に於けるＣｏ，Ｚｎのうち少なくとも１種の含有量は１重量ppm 以上、１０００重量ppm 未満と定めた。（以下、第１群元素の量についてこの範囲を単に１〜１０００重量ppm と表記するが、正確には１重量ppm 以上１０００重量ppm 未満である）
【００１３】
（３）Ｍｎ
ａ）前記高純度金に所定量の第１群元素のうち少なくとも１種と所定量の第２群元素のうち少なくとも１種との共存において、あるいは前記高純度金に所定量のＣｏとの共存において、所定量のＭｎを含有した組成とすることにより前記課題を達成することが出来る。
ｂ）前記共存組成において、１〜１０００重量ppm の第１群元素のうち少なくとも１種と１〜４００重量ppm の第２群元素のうち少なくとも１種と共存したＭｎ、あるいは１〜１０００重量ppm のＣｏと共存したＭｎの含有量が１重量ppm 以上になると、これを含有しないものと対比して高温接合性が向上してくる。前記Ｍｎの含有量が１．０重量％を越えるとＩＣチップの割れが生じてくるが、本発明はそのうち１０００重量ppm 以下の場合に向けられている。この為該共存組成に於けるＭｎの含有量は１〜１０００重量ppm と定めた。
【００１４】
（４）〔Ｌａ，Ｙ，Ｇｄ，Ｂｅ，Ｃａ，Ｅｕ〕
ａ）前記高純度金に所定量の第１群元素のうち少なくとも１種と所定量のＭｎとの共存において、所定量の第２群元素のうち少なくとも１種を含有した組成とすることにより前記課題を達成することが出来る。
ｂ）前記共存組成において１〜１０００重量ppm の第１群元素のうち少なくとも１種と１〜１０００重量ppm のＭｎと共存した第２群元素のうち少なくとも１種の含有量が１重量ppm 以上になるとこれを含有しないものと対比して高温接合性、振動破断率が向上してくる。前記第２群元素のうち少なくとも１種の含有量が４００重量ppm を越えるとボール真球度が悪くなる。この為該共存組成に於ける第２群元素のうち少なくとも１種の含有量は１〜４００重量ppm と定めた。
【００１５】
ｃ）更に前記共存組成において所定量の第２群元素のうち少なくとも１種が次の３種類の場合は、Ｃａを単独で１重量ppm 以上１０重量ppm 未満含有する場合と対比してボール真球度が一段と向上してくる。
この為、前記共存組成において所定量の第２群元素のうち少なくとも１種が次の３種類のうち何れか１つであることが好ましい。
【００１６】
ｉ）Ｌａ，Ｙ，Ｇｄ，Ｂｅ，Ｅｕのうち少なくとも１種を１〜４００重量ppm
ii）Ｃａを１０〜４００重量ppm
iii)ＣａとＬａ，Ｙ，Ｇｄ，Ｂｅ，Ｅｕのうち少なくとも１種とを各々５重量ppm 以上且つその合計で１０〜４００重量ppm
（５）〔Ｐｄ，Ｐｔ，Ｃｕ，Ａｇ，Ｎｉ〕
ａ）前記（１）〜（４）の共存組成において、所定量のＰｄ，Ｐｔ，Ｃｕ，Ａｇ，Ｎｉ（第３群元素）のうち少なくとも１種をさらに含有しても、同様に、前記課題を達成できる。
ｂ）前記共存組成において、１〜１０００重量ppm の第１群元素のうち少なくとも１種と１〜１０００重量ppm のＭｎと共存し、さらに第２群元素のうち少なくとも１種の共存又は非共存において、更に第３群元素のうち少なくとも１種の含有量が０．０１〜２．０重量％の範囲内であれば含有しても、これらの元素を含まないものと同様に優れた効果が得られる。この為共存組成における第３群元素のうち少なくとも１種の含有量は０．０１〜２．０重量％と定めた。
（６）金合金線の製造方法
本発明になる金合金線の好ましい製造方法を説明する。
【００１７】
高純度金に所定量の元素を添加し、真空溶解炉で溶解した後インゴットに鋳造する。インゴットに溝ロール、伸線機を用いた冷間加工と中間アニールを施し、最終冷間加工により直径１０〜１００μｍの細線とした後最終アニールを施すものである。
（７）用途
本発明の半導体素子ボンディング用金合金線は、半導体装置の実装に際して、ＩＣチップ等の半導体素子をリードフレームに接続する際、超音波併用熱圧着ボンディング法を用いた配線材料として好ましく用いられる。また、半導体装置のＩＣチップ等の電極バンプ形成用としても有用である。半導体装置はその後樹脂封止をして仕上げられる。
【００１８】
【実施例】
表１〜３に示す実施例及び比較例について説明する。
（実施例１）
純度９９．９９９重量％の高純度金に所定量のＣｏ，Ｍｎ，Ｌａを添加し真空溶解炉で溶解した後、鋳造して表１に示す組成の金合金インゴットを得、これに溝ロール、伸線機を用いた冷間加工と中間アニールを施し、最終冷間加工により直径３０μｍとし、伸び率４％となるように最終アニールを行い更に表面処理剤を被覆して金合金線に仕上げた。
【００１９】
金合金線を全自動ボンディングマシン（新川株式会社製 ＵＴＣ−１００型）を用いてＩＣチップのＡｌ電極と銅合金リードフレームを超音波併用熱圧着ボンディング法でピン数９６個のボンディング試料（この樹脂封止前の試料を「ボンディング試料」という）を作成した。次いでボンディング試料をエポキシ樹脂で樹脂封止した半導体試料（この樹脂封止後の試料を「半導体試料」という）を作成した。これらの試料を用いて次の試験を行った。
〔高温接合性試験〕
前記半導体試料を用いて事前に端子間の電気抵抗を測定した。次いで高温槽を用いて２００℃で２，０００時間保持して高温加速試験を行った後、同一端子間の電気抵抗を測定し、電気抵抗の変化が１Ω以上となった場合不良箇所とした。試験は４個の半導体試料から任意に１００カ所選定して測定した。不良箇所の数を高温放置不良率として表１に示した。
〔ボール真球度〕
全自動ボンディングマシンにて大気中でボールを作成し、１０００倍の測定顕微鏡を用いてボールの縦、横長さを測定し、次式によってボール真球度を算出した。１０個のボールについて測定し、その平均値をボール真球度として表１に示した。
【００２０】
ボール真球度＝（短径）／（長径）
〔振動破断率〕
前記ボンディング試料を搬送用マガジンに挿入したものを振動試験機に固定し、試料を振動させた。振動は周波数１００Hz、変位量０．１mmとして繰り返し与えた。２００００回の振動を与えた後、実体顕微鏡にて破断したワイヤ本数を数えた。試験は４個のボンディング試料から任意に選定した１００本のワイヤ中のワイヤ破断数を振動破断率として表１に示した。
〔チップ割れ〕
前記ボンディング試料をＫＯＨ１wt％水溶液中に約３０分浸漬し、ＩＣチップ上のＡｌ電極膜を除去した後、ＩＣチップ表面を金属顕微鏡で観察し、チップ割れの有無を観察した。試験は４個のボンディング試料から任意に選定した電極試料数１００個中のチップ割れ数をチップ割れ不良率として表１に示した。
（実施例２〜６４）（比較例１〜１９）
金合金線の組成を表１〜４に示すようにしたこと以外は実施例１と同様にして金合金線に仕上げ、同様の試験を行ってその結果を表１〜４に示した。
【００２１】
【表１】

Figure 0004117973
【００２２】
【表２】
Figure 0004117973
【００２３】
【表３】
Figure 0004117973
【００２４】
【表４】
Figure 0004117973
【００２５】
（試験結果）
（１）高純度金にＣｏ，Ｚｎ（第１群元素）のうち少なくとも１種を１〜１０００重量ppm 、Ｍｎを１〜１０００重量ppm 、Ｌａ，Ｙ，Ｇｄ，Ｂｅ，Ｃａ，Ｅｕ（第２群元素）のうち少なくとも１種を１〜４００重量ppm 共存して含有した組成である実施例１〜３９および４７〜５１は高温放置不良率が０〜５％、ボール真球度が０．９２〜０．９９、振動破断率が０〜１０％、チップ割れ不良率が０％と優れた効果を示した。
（２）高純度金にＣｏを１〜１０００重量ppm 、Ｍｎを１〜１０００重量ppm 共存した組成である実施例４０〜４６は高温放置不良率が０〜５％、ボール真球度が０．９５〜０．９８、振動破断率が０〜１０％、チップ割れ不良率が０％と優れた効果を示した。
（３）高純度金に第１群元素のうち少なくとも１種を１〜１０００重量ppm と、Ｍｎを１〜１０００重量ppm と、第２群元素のうち少なくとも１種を１〜４００重量ppm と、Ｐｄ，Ｐｔ，Ｃｕ，Ａｇ，Ｎｉ（第３群元素）のうち少なくとも１種を０．０１〜２．０重量％とを共存して含有した組成である実施例４７〜５９、および、高純度金にＣｏを１〜１０００重量ppm とＭｎを１〜１０００重量ppm と第２群元素のうち少なくとも１種を１〜４００重量ppm とを共存して含有した組成である実施例６０〜６６は、高温放置不良率が０％、ボール真球度が０．９５〜０．９８、振動破断率が０〜１０％、チップ割れ不良率が０％と優れた効果を示した。
【００２６】
（４）この中でも第２群元素のうち少なくとも１種が次の３種類のうち何れか１つである場合は、Ｃａのみを１〜１０重量ppm 未満含有する実施例２３と対比して振動破断率が１０％に対して０％と更に優れた効果を示す様になる。この為共存元素としての第２群元素のうち少なくとも１種は次の３種類のうち何れか１つであることが好ましい。
ｉ）Ｌａ，Ｅｕ，Ｙ，Ｂｅのうち少なくとも１種を１〜４００重量ppm
ii）Ｃａを１０〜４００重量ppm
iii)Ｃａ及びＬａ，Ｅｕ，Ｙ，Ｂｅのうち少なくとも１種とを各々５重量ppm以上且つその合計で１０〜４００重量ppm
【００２７】
（５）高純度金に第１群元素のうち少なくとも１種又はＭｎのみを含有する比較例１〜５は高温放置不良率が６３〜８２％、振動破断率が１９〜３６％であり本願の構成である実施例１〜６６の方が優れていることがわかる。
【００２８】
（６）高純度金にＺｎを１〜１０００重量ppm 含有するが第２群元素のうち少なくとも１種を含有しない比較例６は高温放置不良率が４２％、振動破断率が２１％であり本願の構成である実施例１〜６６の方が優れていることがわかる。
（７）高純度金に第１群元素のうち少なくとも１種を含有しない比較例７〜９は高温放置不良率が５７〜６６％であり本願の構成である実施例１〜６６の方が優れていることがわかる。
【００２９】
（８）高純度金にＭｎを含有しない比較例１０，１１は高温放置不良率が６９〜７２％であり本願の構成である実施例１〜６６の方が優れていることがわかる。
（９）高純度金に第２群元素のうち少なくとも１種のみを含有する比較例１２〜１３は高温放置不良率が１００％であり本願の構成である実施例１〜６６の方が優れていることがわかる。
【００３０】
（１０）高純度金に含有する第１群元素のうち少なくとも１種又はＭｎの含有量が１重量％を越える比較例１４〜１７はチップ割れ不良率が５１〜６３％であり本願の構成である実施例１〜６６の方が優れていることがわかる。
（１１）高純度金に含有する第２群元素のうち少なくとも１種の含有量が１０００重量ppm を越える比較例１８，１９はボール真球度が０．６２〜０．６７であり本願の構成である実施例１〜６６の方が優れていることがわかる。
【００３１】
【発明の効果】
本発明により高純度金にＣｏ，Ｚｎのうち少なくとも１種を１〜１０００重量ppm ，Ｍｎを１〜１０００重量ppm ，Ｌａ，Ｙ，Ｇｄ，Ｂｅ，Ｃａ，Ｅｕのうち少なくとも１種を１〜４００重量ppm 含有させた組成、あるいは高純度金にＣｏを１〜１０００重量ppm 、Ｍｎを１〜１０００重量ppm 含有させた組成、さらにはこれらにＰｄ，Ｐｔ，Ｃｕ，Ａｕ，Ａｇ，Ｎｉのうち少なくとも１種を０．０１〜２．０重量％添加した組成を有する半導体素子ボンディング用金合金線によれば、高温で長時間の環境に保持した後の接合性の信頼性が向上すると共に、ボール真球度に優れ、振動破断率が小さく、ＩＣチップの割れが少ない金合金線とすることが出来る。
【図面の簡単な説明】
【図１】ワイヤボンディング法により金合金線を用いてＩＣチップとリードフレームの間を接続した様子を示す。
【符号の説明】
１…ＩＣチップ
２…Ａｌ電極
３…金合金線
４…リードフレーム
５，６…接合点[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a bonding wire for a semiconductor element and a gold alloy wire for bonding a semiconductor element useful for forming a bump.
[0002]
[Prior art]
Conventionally, as a wire connecting an IC chip electrode and an external lead used in a semiconductor device, a gold alloy wire in which a trace amount of other metal elements is contained in high-purity gold having a purity of 99.99% by weight or more has excellent reliability. It is often used as being.
Usually, as a method for connecting the semiconductor device, an ultrasonic combined thermocompression bonding method using a gold alloy wire is mainly used, and then the resin is sealed to obtain a semiconductor device.
[0003]
Here, FIG. 1 shows a state where wiring is formed by a thermocompression bonding method using ultrasonic waves and a loop is formed. Reference numeral 1 is an IC chip, 2 is an Al electrode on the IC chip, 3 is a gold alloy wire, 4 is a lead frame, 5 is a first side junction, and 6 is a second side junction. Recently, semiconductor devices are often used by being heated by an operating power source or an external environment and exposed to a high temperature, and bonding wires are required to have low junction deterioration even when held at a high temperature for a long time. For this reason, a predetermined gold alloy composition has been proposed as being effective for pull strength deterioration after being kept at a high temperature. For example, Japanese Patent Application Laid-Open No. 10-4115 discloses a gold alloy wire having a composition containing Co, Ge, etc. as having excellent pull strength after holding a wire-bonded sample at 200 ° C. for 100 hours. Japanese Patent Laid-Open No. 2-215140 discloses a gold alloy wire having a composition containing Mn and the like because it has excellent shear strength after holding a wire-bonded sample at 250 ° C. for 900 minutes.
[0004]
On the other hand, when an alloying element is added to gold in order to obtain a gold alloy wire that improves the bondability after being held at the high temperature, there arises a problem that the vibration breaking performance is lowered. The vibration rupture performance is required for a gold alloy wire as performance capable of preventing disconnection due to vibration during sample transportation before resin sealing of a semiconductor device.
[0005]
[Problems to be solved by the invention]
Here, when trying to improve the reliability of the bondability conventionally, there is a problem in any of the ball sphericity, vibration breakage rate, and IC chip cracking property, and recently it has been kept at a high temperature for a longer time. There is a need for further improvement in the reliability of the later joining. The above-described gold alloy wire is still insufficient for the above requirements.
[0006]
The present invention has been made in view of the circumstances as described above, and the object of the present invention is to improve the reliability of the bondability after being held in an environment at a high temperature for a long time, and is excellent in ball sphericity. Another object of the present invention is to provide a gold alloy wire having a small vibration breaking rate and few IC chip cracks.
[0007]
[Means for Solving the Problems]
As a result of extensive studies by the present inventors, at least one of a predetermined amount of Co, Zn (first group element), a predetermined amount of Mn, and a predetermined amount of La, Y, Gd, Be, Ca, Eu ( It is found that the above-mentioned object can be achieved by containing at least one of the second group elements) in high-purity gold or by containing a predetermined amount of Co and a predetermined amount of Mn in high-purity gold. Thus, the present invention has been completed.
[0008]
(1) At least one of Co and Zn is 1 ppm by weight to less than 1000 ppm by weight, Mn is 1-1000 ppm by weight, and at least one of La, Y, Gd, Be, Ca, Eu is 1 to 400 wt. ppm contains a semiconductor element bonding gold alloy wire characterized in that the balance of Au and No 避不 pure product.
(2) Containing at least one of Co and Zn in the range of 1 to 1000 ppm, Mn from 1 to 1000 ppm, and at least one of La, Y, Gd, Be, and Eu from 1 to 400 ppm by weight and a semiconductor element bonding gold alloy wire for the balance being made of Au and No 避不 pure product.
[0009]
(3) Co, at least one of less than 1000 ppm by weight or 1 ppm by weight of Zn, and a 1 to 1000 ppm by weight and Ca Mn containing 10 to 400 ppm by weight, the balance being Au and No 避不 pure product A gold alloy wire for bonding semiconductor elements.
(4) At least one of Co and Zn is 1 ppm by weight to less than 1000 ppm by weight, Mn is 1 to 1000 ppm by weight, and at least one of Ca and La, Y, Gd, Be, Eu is 5 ppm by weight. or more and in that the total contained 10 to 400 wt ppm, semiconductor devices bonded gold alloy wire for the balance being made of Au and No 避不 pure product.
(5) Co with 1 ppm by weight to less than 1000 ppm by weight, a Mn containing 1 to 1000 ppm by weight, a semiconductor device bonding gold alloy wire for the balance being made of Au and No 避不 pure product.
(6) The gold alloy for bonding semiconductor elements according to the above (1) to (5), further comprising 0.01 to 2.0% by weight of at least one of Pd, Pt, Cu, Ag, and Ni. line.
[0010]
The gold alloy wire for semiconductor element bonding of the present invention is excellent not only for ball bonding but also for forming a bump because it has excellent high-temperature bonding properties together with ball sphericity, vibration breaking rate, and IC chip cracking. It is excellent and the present invention includes the formation of bumps.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
(1) Raw charges The raw charges are preferably high-purity gold refined to at least 99.99% by weight or more. More preferably, it is 99.995 weight% or more, Most preferably, it is 99.999 weight% or more. Therefore, the inevitable impurities in the alloy are preferably less than 0.01% by weight. More preferably it is less than 0.005% by weight, most preferably less than 0.001% by weight. Less unavoidable impurities are preferable because harmful elements can be removed and reliability is improved.
[0012]
(2) [Co, Zn]
a) In the coexistence of a predetermined amount of Mn and at least one of a predetermined amount of the second group element in the high-purity gold, a composition containing at least one of a predetermined amount of Co and Zn, or The said subject can be achieved by setting it as the composition containing predetermined amount Co in the coexistence with predetermined amount Mn in the said high purity gold | metal | money.
b) In the coexisting composition, at least one of Co and Zn coexisting with at least one of 1-1000 ppm by weight of Mn and 1 to 400 ppm by weight of the second group element, or coexisting with 1-1000 ppm of Mn. When the Co content is 1 ppm by weight or more, the high-temperature bondability is improved as compared with the case of not containing this. The above effect can be maintained up to a content of at least one of Co and Zn up to 1.0% by weight. However, if the content exceeds 1.0% by weight, the IC chip cracks. It is intended for cases where the weight is less than ppm. Therefore, the content of at least one of Co and Zn in the coexisting composition is determined to be 1 ppm by weight or more and less than 1000 ppm by weight. (Hereinafter, this range is simply expressed as 1 to 1000 ppm by weight for the amount of the first group element, but it is precisely 1 to 1000 ppm by weight.)
[0013]
(3) Mn
a) Coexistence of the high-purity gold with at least one of a predetermined amount of the first group element and at least one of the predetermined amount of the second group element, or coexistence of the high-purity gold with a predetermined amount of Co. In this case, the above-described problem can be achieved by using a composition containing a predetermined amount of Mn.
b) In the coexisting composition, Mn coexisting with at least one of the first group elements of 1 to 1000 ppm by weight and at least one of the second group elements of 1 to 400 ppm by weight, or 1 to 1000 ppm by weight of When the content of Mn coexisting with Co is 1 ppm by weight or more, the high temperature bondability is improved as compared with the case of not containing this. When the content of Mn exceeds 1.0% by weight, cracking of the IC chip occurs, but the present invention is directed to the case of 1000 ppm by weight or less. Therefore, the content of Mn in the coexisting composition is set to 1 to 1000 ppm by weight.
[0014]
(4) [La, Y, Gd, Be, Ca, Eu]
a) In the coexistence of at least one of a predetermined amount of the first group element and a predetermined amount of Mn in the high-purity gold, the composition contains at least one of the predetermined amount of the second group element. Can accomplish the task.
b) In the coexisting composition, the content of at least one of the first group elements of 1-1000 ppm by weight and the second group of elements coexisting with 1-1000 ppm by weight of Mn is 1 ppm by weight or more. If it becomes, compared with the thing which does not contain this, high temperature bondability and a vibration fracture rate will improve. When the content of at least one of the second group elements exceeds 400 ppm by weight, the ball sphericity is deteriorated. For this reason, the content of at least one of the second group elements in the coexisting composition is set to 1 to 400 ppm by weight.
[0015]
c) Further, when at least one of the predetermined amount of the second group element in the coexisting composition is the following three kinds, the ball true sphere is compared with the case where Ca is contained alone by 1 ppm to less than 10 ppm by weight. The degree will improve further.
For this reason, in the coexisting composition, it is preferable that at least one of the predetermined amount of the second group element is any one of the following three types.
[0016]
i) 1 to 400 ppm by weight of at least one of La, Y, Gd, Be, and Eu
ii) 10 to 400 ppm by weight of Ca
iii) Each of Ca and at least one of La, Y, Gd, Be, and Eu is 5 ppm by weight or more and 10 to 400 ppm by weight in total.
(5) [Pd, Pt, Cu, Ag, Ni]
a) In the coexisting composition of (1) to (4), even if at least one of a predetermined amount of Pd, Pt, Cu, Ag, Ni (third group element) is further contained, Can be achieved.
b) In the coexisting composition, at least one of 1-1000 ppm by weight of the first group element coexists with 1-1000 ppm by weight of Mn, and at least one of the second group elements coexisting or non-coexisting. In addition, even if the content of at least one of the third group elements is in the range of 0.01 to 2.0% by weight, the same excellent effects as those not containing these elements can be obtained. It is done. For this reason, the content of at least one of the third group elements in the coexisting composition is determined to be 0.01 to 2.0% by weight.
(6) Method for Producing Gold Alloy Wire A preferred method for producing a gold alloy wire according to the present invention will be described.
[0017]
A predetermined amount of element is added to high-purity gold, melted in a vacuum melting furnace, and cast into an ingot. The ingot is subjected to cold working and intermediate annealing using a groove roll and a wire drawing machine, and is subjected to final annealing after making the fine wire 10 to 100 μm in diameter by final cold working.
(7) Applications The gold alloy wire for bonding a semiconductor element of the present invention is preferably used as a wiring material using an ultrasonic combined thermocompression bonding method when connecting a semiconductor element such as an IC chip to a lead frame when mounting a semiconductor device. Used. It is also useful for forming electrode bumps such as IC chips of semiconductor devices. The semiconductor device is then finished with resin sealing.
[0018]
【Example】
Examples and Comparative Examples shown in Tables 1 to 3 will be described.
(Example 1)
A predetermined amount of Co, Mn, La was added to high-purity gold having a purity of 99.999% and dissolved in a vacuum melting furnace, and then cast to obtain a gold alloy ingot having the composition shown in Table 1, and a groove roll, Cold processing using a wire drawing machine and intermediate annealing were performed, the final cold processing was performed to make the diameter 30 μm, the final annealing was performed so that the elongation was 4%, and the surface treatment agent was further coated to finish the gold alloy wire. .
[0019]
Using a fully automatic bonding machine (UTC-100, manufactured by Shinkawa Co., Ltd.) for gold alloy wire, a bonding sample with 96 pins (this resin) using an IC chip Al electrode and a copper alloy lead frame by ultrasonic thermocompression bonding. A sample before sealing was referred to as a “bonding sample”. Next, a semiconductor sample in which the bonding sample was resin-sealed with an epoxy resin (the sample after the resin sealing was referred to as “semiconductor sample”) was prepared. The following tests were conducted using these samples.
[High temperature bondability test]
The electrical resistance between the terminals was measured in advance using the semiconductor sample. Next, after a high temperature accelerated test was conducted by holding at 200 ° C. for 2,000 hours using a high temperature bath, the electrical resistance between the same terminals was measured, and when the change in electrical resistance was 1Ω or more, it was determined as a defective part. The test was performed by arbitrarily selecting 100 locations from 4 semiconductor samples. The number of defective parts is shown in Table 1 as a high temperature storage defect rate.
[Ball sphericity]
Balls were created in the atmosphere with a fully automatic bonding machine, the vertical and horizontal lengths of the balls were measured using a 1000 × measuring microscope, and the ball sphericity was calculated according to the following equation. Ten balls were measured, and the average value was shown in Table 1 as the ball sphericity.
[0020]
Ball sphericity = (minor axis) / (major axis)
[Vibration breaking rate]
The bonding sample inserted into a transfer magazine was fixed to a vibration tester, and the sample was vibrated. Vibration was repeatedly applied at a frequency of 100 Hz and a displacement of 0.1 mm. After applying 20,000 vibrations, the number of broken wires was counted with a stereomicroscope. In the test, Table 1 shows the number of wire breaks in 100 wires arbitrarily selected from four bonding samples as the vibration breakage rate.
[Chip cracking]
The bonding sample was immersed in an aqueous solution of 1 wt% KOH for about 30 minutes to remove the Al electrode film on the IC chip, and then the surface of the IC chip was observed with a metal microscope to observe the presence or absence of chip cracking. In the test, Table 1 shows the number of chip cracks in 100 electrode samples arbitrarily selected from four bonding samples as a chip crack defect rate.
(Examples 2 to 64) (Comparative Examples 1 to 19)
A gold alloy wire was finished in the same manner as in Example 1 except that the composition of the gold alloy wire was as shown in Tables 1 to 4, the same test was performed, and the results are shown in Tables 1 to 4.
[0021]
[Table 1]
Figure 0004117973
[0022]
[Table 2]
Figure 0004117973
[0023]
[Table 3]
Figure 0004117973
[0024]
[Table 4]
Figure 0004117973
[0025]
(Test results)
(1) High purity gold with at least one of Co and Zn (first group elements) of 1 to 1000 ppm by weight, Mn of 1 to 1000 ppm by weight, La, Y, Gd, Be, Ca, Eu (second Examples 1 to 39 and 47 to 51 having compositions containing at least one of the group elements) in an amount of 1 to 400 ppm by weight have a high temperature storage failure rate of 0 to 5% and a ball sphericity of 0.92. -0.99, the vibration breaking rate was 0 to 10%, and the chip crack defect rate was 0%.
(2) Examples 40 to 46 having a composition in which Co is mixed in high purity gold in an amount of 1 to 1000 ppm by weight and Mn is in the range of 1 to 1000 ppm by weight. The excellent effects of 95 to 0.98, the vibration breaking rate of 0 to 10%, and the chip cracking failure rate of 0% were exhibited.
(3) In high purity gold, at least one of the first group elements is 1 to 1000 ppm by weight, Mn is 1 to 1000 ppm by weight, and at least one of the second group elements is 1 to 400 ppm by weight; Examples 47 to 59 having a composition containing at least one of Pd, Pt, Cu, Ag, and Ni (third group element) in an amount of 0.01 to 2.0% by weight, and high purity Examples 60 to 66 having a composition containing Co in an amount of 1 to 1000 ppm by weight of Co, 1 to 1000 ppm by weight of Mn, and 1 to 400 ppm by weight of at least one of the second group elements, The high temperature standing defective rate was 0%, the ball sphericity was 0.95 to 0.98, the vibration breaking rate was 0 to 10%, and the chip cracking defective rate was 0%.
[0026]
(4) Among them, when at least one of the second group elements is any one of the following three kinds, vibration fracture is caused in contrast to Example 23 containing less than 1 to 10 ppm by weight of Ca alone. The rate is 0% with respect to 10%, and an even better effect is exhibited. Therefore, at least one of the second group elements as coexisting elements is preferably one of the following three types.
i) 1 to 400 ppm by weight of at least one of La, Eu, Y, and Be
ii) 10 to 400 ppm by weight of Ca
iii) Each of at least one of Ca and La, Eu, Y, and Be is 5 ppm by weight or more and 10 to 400 ppm by weight in total.
[0027]
(5) Comparative Examples 1 to 5 containing at least one of the first group elements or only Mn in high-purity gold have a high temperature storage failure rate of 63 to 82% and a vibration breaking rate of 19 to 36%. It turns out that the Examples 1-66 which are structures are superior.
[0028]
(6) Comparative Example 6 containing high-purity gold containing 1 to 1000 ppm by weight of Zn but not containing at least one of the second group elements has a high temperature failure rate of 42% and a vibration breaking rate of 21%. It turns out that the Examples 1-66 which are the structures of this are superior.
(7) Comparative Examples 7 to 9 which do not contain at least one of the first group elements in high purity gold have a high temperature storage failure rate of 57 to 66%, which is superior to Examples 1 to 66 having the configuration of the present application. You can see that
[0029]
(8) It can be seen that Comparative Examples 10 and 11 in which Mn is not contained in high-purity gold have a high-temperature standing defect rate of 69 to 72%, and Examples 1 to 66 having the configuration of the present application are superior.
(9) Comparative Examples 12 to 13 containing only at least one of the second group elements in high purity gold have a high temperature storage failure rate of 100%, and Examples 1 to 66 having the configuration of the present application are superior. I understand that.
[0030]
(10) Comparative Examples 14 to 17 in which the content of at least one of the first group elements contained in the high-purity gold or Mn exceeds 1% by weight has a chip crack defect rate of 51 to 63%. It can be seen that Examples 1 to 66 are superior.
(11) In Comparative Examples 18 and 19 in which the content of at least one of the second group elements contained in the high purity gold exceeds 1000 ppm by weight, the ball sphericity is 0.62 to 0.67, and the configuration of the present application It can be seen that Examples 1 to 66 are superior.
[0031]
【The invention's effect】
According to the present invention, at least one of Co and Zn in high purity gold is 1-1000 ppm by weight, Mn is 1-1000 ppm by weight, and at least one of La, Y, Gd, Be, Ca, Eu is 1 to 400. A composition containing ppm by weight, or a composition containing 1 to 1000 ppm by weight of Co and 1 to 1000 ppm by weight of Mn in high-purity gold, and further including at least one of Pd, Pt, Cu, Au, Ag, and Ni. According to the gold alloy wire for bonding a semiconductor element having a composition in which one type is added in an amount of 0.01 to 2.0% by weight, the reliability of the bondability after being maintained in an environment at a high temperature for a long time is improved. A gold alloy wire having excellent sphericity, a low vibration breaking rate, and few IC chip cracks can be obtained.
[Brief description of the drawings]
FIG. 1 shows a state where an IC chip and a lead frame are connected using a gold alloy wire by a wire bonding method.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... IC chip 2 ... Al electrode 3 ... Gold alloy wire 4 ... Lead frame 5, 6 ... Joint point

Claims (6)

Ｃｏ，Ｚｎのうち少なくとも１種を１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 及びＬａ，Ｙ，Ｇｄ，Ｂｅ，Ｃａ，Ｅｕのうち少なくとも１種を１〜４００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。1 to 1000 ppm by weight of at least one of Co and Zn, 1 to 1000 ppm by weight of Mn, and 1 to 400 ppm by weight of at least one of La, Y, Gd, Be, Ca and Eu. a semiconductor element bonding gold alloy wire characterized in that the balance of Au and No 避不 pure product. Ｃｏ，Ｚｎのうち少なくとも１種を１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 及びＬａ，Ｙ，Ｇｄ，Ｂｅ，Ｅｕのうち少なくとも１種を１〜４００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。Containing at least one of Co and Zn in the range of 1 ppm to less than 1000 ppm, containing 1 to 1000 ppm of Mn and 1 to 400 ppm of at least one of La, Y, Gd, Be, and Eu, and the balance There semiconductor element bonding gold alloy wire characterized in that it consists of Au and No 避不 pure product. Ｃｏ，Ｚｎのうち少なくとも１種を１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 及びＣａを１０〜４００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。Wherein Co, at least one of less than 1000 ppm by weight or 1 ppm by weight of Zn, and a 1 to 1000 ppm by weight and Ca Mn containing 10 to 400 ppm by weight, the balance being Au and No 避不 pure product A gold alloy wire for bonding semiconductor elements. Ｃｏ，Ｚｎのうち少なくとも１種を１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 、Ｃａ及びＬａ，Ｙ，Ｇｄ，Ｂｅ，Ｅｕのうち少なくとも１種を各々５重量ppm 以上且つその合計で１０〜４００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。At least one of Co and Zn is 1 ppm by weight to less than 1000 ppm by weight, Mn is 1-1000 ppm by weight, and at least one of Ca and La, Y, Gd, Be, Eu is 5 ppm by weight or more. total contains 10 to 400 wt ppm, semiconductor devices bonded gold alloy wire for the balance being made of Au and No 避不 pure product. Ｃｏを１重量ppm 以上１０００重量ppm 未満、Ｍｎを１〜１０００重量ppm 含有し、残部がＡｕと不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。Less than 1000 ppm by weight or 1 ppm by weight Co, and Mn contained 1 to 1000 ppm by weight, a semiconductor device bonding gold alloy wire for the balance being made of Au and No 避不 pure product. 更にＰｄ，Ｐｔ，Ｃｕ，Ａｇ，Ｎｉのうち少なくとも１種を０．０１〜２．０重量％含有することを特徴とする請求項１〜５記載の半導体素子ボンディング用金合金線。  6. The gold alloy wire for bonding a semiconductor element according to claim 1, further comprising 0.01 to 2.0% by weight of at least one of Pd, Pt, Cu, Ag, and Ni.
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