JP2006032643A - Semiconductor unit - Google Patents

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Publication number
JP2006032643A
JP2006032643A JP2004209153A JP2004209153A JP2006032643A JP 2006032643 A JP2006032643 A JP 2006032643A JP 2004209153 A JP2004209153 A JP 2004209153A JP 2004209153 A JP2004209153 A JP 2004209153A JP 2006032643 A JP2006032643 A JP 2006032643A
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Prior art keywords
resin composition
semiconductor device
gold
gold wire
weight
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JP2004209153A
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JP4513440B2 (en
Inventor
Yasutsugu Asada
康嗣 浅田
Junpei Morimoto
純平 森本
Takayuki Matsumoto
孝行 松元
Shinichi Maebotoke
伸一 前佛
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor unit highly reliable at a high temperature. <P>SOLUTION: In this semiconductor unit, a semiconductor device and external terminals are joined via aluminum pads and golden wires; and at least the semiconductor device, the aluminum pads, and the golden wires are sealed with a resin composition. In this semiconductor unit, the thickness of the aluminum pad is ≥0.1 μm and ≤3 μm; the golden wire contains 0.001-1 wt% of Pd; and the total amount of atoms of boron, nitrogen, fluorine, sodium, chlorine, bromine, iodine, antimony, molybdenum and bismuth contained in the resin composition is ≤0.3 wt%. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、高温での信頼性に優れた半導体装置に関するものである。   The present invention relates to a semiconductor device having excellent reliability at high temperatures.

半導体装置は半導体素子の微細な配線と外部端子を接続するために、アルミの薄膜パッドを介して金ワイヤを用いて接合するのが主流である。これは、金が展延性に富み加工性がよく、かつ化学的に安定であるために空気中での酸化等に強い性質を利用したものである。
近年、半導体装置の適用範囲は拡大の一途をたどり、車載用途など高温環境下での使用が珍しくなくなってきており、半導体装置に対する高温環境下での信頼性の要求が急速に高まってきている。
一方、アルミパッドと金ワイヤの接合部では、１２５℃以上の高温で長時間放置すると金とアルミの間に合金層が形成され、この合金層にカーケンダルボイドと呼ばれる空隙が発生し、接合部の強度が低下したり、合金層がハロゲン化合物などにより腐食され接合部の強度が低下したりすることが知られている。 In order to connect a fine wiring of a semiconductor element and an external terminal, a semiconductor device is mainly joined using a gold wire through an aluminum thin film pad. This is because gold is highly malleable, has good workability, and is chemically stable, so that it uses properties that are strong against oxidation in the air.
In recent years, the application range of semiconductor devices has been steadily expanding, and use in high-temperature environments such as in-vehicle applications is not uncommon, and the demand for reliability of semiconductor devices in high-temperature environments is rapidly increasing.
On the other hand, when the aluminum pad and the gold wire are joined at a high temperature of 125 ° C. or higher for a long time, an alloy layer is formed between the gold and the aluminum, and voids called Kirkendall voids are generated in the alloy layer. It is known that the strength of the joint is lowered, or the alloy layer is corroded by a halogen compound or the like and the strength of the joint is lowered.

これらの問題に対し、これまでに種々の研究がなされ、ハロゲン化合物を含まない封止樹脂を用いる方法（例えば、非特許文献１参照。）や、ハロゲン化合物以外の難燃剤を使用する方法（例えば、特許文献１参照。）などが提唱され、効果が報告されているが、最近の市場の高度な要求を満足するには至っていない。
このような状況から、高温での信頼性を向上させる手法の開発が強く望まれていた。 For these problems, various studies have been made so far, and a method using a sealing resin not containing a halogen compound (for example, see Non-Patent Document 1) or a method using a flame retardant other than a halogen compound (for example, However, it has not been able to satisfy the high demands of the recent market.
Under such circumstances, development of a technique for improving reliability at high temperatures has been strongly desired.

Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｒｅｌｉａｂｉｌｉｔｙ ４２、２００２、ｐ１５２３−１５２８Microelectronics Reliability 42, 2002, p1523-1528 特開２００１−０８１２８７JP 2001-081287 A

本発明は、高温での信頼性に優れた半導体装置を提供するものである。   The present invention provides a semiconductor device having excellent reliability at high temperatures.

本発明は、
［１］半導体素子と外部端子とがアルミパッド及び金ワイヤを介して接合され、少なくとも前記半導体素子、アルミパッド、及び金ワイヤを、樹脂組成物を用いて封止してなる半導体装置において、前記アルミパッドの厚みが０．１μｍ以上、３μｍ以下であり、前記金ワイヤが高純度金に最外廓電子の数が偶数である金属を０．００１〜１重量％含み、かつ前記樹脂組成物中に含まれるホウ素、窒素、ハロゲン元素、ナトリウム、アンチモン、モリブデン及びビスマス原子の総和量が０．３重量％以下であることを特徴とする半導体装置。
［２］前記最外廓電子の数が偶数である金属が、Ｂｅ、Ｍｇ、Ｓｉ、Ｃａ、Ｓｃ、Ｔｉ、Ｖ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｚｎ、Ｓｒ、Ｚｒ、Ｐｄ、Ｓｎ、Ｂａ、Ｔａ、Ｗ、Ｏｓ、Ｇｅ、Ｉｒ及びＰｂから選ばれる少なくとも１種以上の金属である第［１］項記載の半導体装置。 The present invention
[1] In a semiconductor device in which a semiconductor element and an external terminal are bonded via an aluminum pad and a gold wire, and at least the semiconductor element, the aluminum pad, and the gold wire are sealed using a resin composition. The aluminum pad has a thickness of 0.1 μm or more and 3 μm or less, and the gold wire contains 0.001 to 1% by weight of metal having an even number of outermost electrons in high-purity gold, and in the resin composition The total amount of boron, nitrogen, halogen elements, sodium, antimony, molybdenum and bismuth atoms contained in the semiconductor device is 0.3% by weight or less.
[2] The metal having an even number of outermost electrons is Be, Mg, Si, Ca, Sc, Ti, V, Mn, Fe, Co, Ni, Zn, Sr, Zr, Pd, Sn, Ba The semiconductor device according to item [1], which is at least one metal selected from Ta, W, Os, Ge, Ir, and Pb.

本発明に従うと、従来技術では得られなかった高温での信頼性に優れた半導体装置を得ることができる。   According to the present invention, it is possible to obtain a semiconductor device excellent in reliability at a high temperature that could not be obtained by the prior art.

半導体素子と外部端子とがアルミパッド及び金ワイヤを介して接合され、少なくとも前記半導体素子、アルミパッド、及び金ワイヤを、樹脂組成物を用いて封止してなる半導体装置において、前記アルミパッドの厚みが０．１μｍ以上、３μｍ以下であり、前記金ワイヤが高純度金に最外廓電子の数が偶数である金属を０．００１〜１重量％含み、かつ前記樹脂組成物中に含まれるホウ素、窒素、ハロゲン元素、ナトリウム、アンチモン、モリブデン、及びビスマス原子の総和量が０．３重量％以下であることにより、従来技術では得られなかった高温での信頼性に優れた半導体装置を得ることができるものである。
以下、各成分について説明する。 In a semiconductor device in which a semiconductor element and an external terminal are joined via an aluminum pad and a gold wire, and at least the semiconductor element, the aluminum pad, and the gold wire are sealed using a resin composition, Thickness is 0.1 μm or more and 3 μm or less, and the gold wire contains 0.001 to 1% by weight of metal having an even number of outermost electrons in high-purity gold, and is contained in the resin composition. When the total amount of boron, nitrogen, halogen elements, sodium, antimony, molybdenum, and bismuth atoms is 0.3% by weight or less, a semiconductor device having excellent reliability at high temperatures that could not be obtained by the prior art is obtained. It is something that can be done.
Hereinafter, each component will be described.

本発明に用いる半導体素子上のアルミパッドは、厚みが３μｍ以下であることを満足すれば、これまでの半導体素子に用いられてきた材質や製法を自由に使うことができる。厚みが３μｍ以上になると、高温で放置された時に生成する合金層の厚みが厚くなり、合金層内部のカーケンダルボイドの生成や合金層が受ける腐食などの不具合が防ぎにくくなる。   As long as the aluminum pad on the semiconductor element used in the present invention satisfies a thickness of 3 μm or less, the materials and manufacturing methods that have been used in the conventional semiconductor elements can be freely used. If the thickness is 3 μm or more, the thickness of the alloy layer generated when left at high temperature becomes thick, and it becomes difficult to prevent problems such as the generation of Kirkendall voids inside the alloy layer and the corrosion that the alloy layer receives.

本発明に用いる金ワイヤは、９９．９９９重量％以上の高純度金に、添加剤として最外廓電子の数が偶数である金属を０．００１〜１重量％加えて作られることを満足すれば、従来の金ワイヤの製法を自由に使うことができ、その直径なども特に制限するものではない。添加剤として用いる最外廓電子の数が偶数である金属は、１２５℃以上の高温で長時間放置した場合など、金の中の格子上をアルミニウム原子が移動する際に、その拡散速度を遅くし、また空隙同士が集まるのを防ぐ役割をしている。この役割により、高温放置した際の合金の生成を抑制し、かつカーケンダルボイドの生成をも抑制するのである。最外廓電子の数が偶数である金属の添加量が０．００１重量％未満であると添加した効果が充分に得られず、また１重量％を越えると金ワイヤ自体が硬くなりすぎてアルミパッドとの接合が困難になるので好ましくない。金線中の金および添加元素の量は、一般に行われているＩＣＰ法で定量することができる。
最外廓電子の数が偶数である金属としては、特に限定するものでは無いが、安全性、入手のし易さ等を考慮すると、Ｂｅ、Ｍｇ、Ｓｉ、Ｃａ、Ｓｃ、Ｔｉ、Ｖ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｚｎ、Ｓｒ、Ｚｒ、Ｐｄ、Ｓｎ、Ｂａ、Ｔａ、Ｗ、Ｏｓ、Ｇｅ、Ｉｒ及びＰｂが好ましい。またこれらの金属は、１種類を単独で添加しても、２種以上を併用して添加してよい。 The gold wire used in the present invention is satisfied by adding 0.001 to 1% by weight of a metal having an even number of outermost electrons as an additive to high purity gold of 99.999% by weight or more. For example, a conventional gold wire manufacturing method can be used freely, and the diameter thereof is not particularly limited. Metals with an even number of outermost electrons used as additives slow down the diffusion rate when aluminum atoms move on the lattice in gold, such as when left for a long time at a high temperature of 125 ° C or higher. And also serves to prevent the gaps from gathering. This role suppresses the formation of alloys when left at high temperatures and also suppresses the formation of Kirkendall voids. If the addition amount of the metal having an even number of outermost electrons is less than 0.001% by weight, the added effect cannot be sufficiently obtained, and if it exceeds 1% by weight, the gold wire itself becomes too hard and the aluminum is too hard. Since joining with a pad becomes difficult, it is not preferable. The amount of gold and additive elements in the gold wire can be quantified by a commonly performed ICP method.
The metal having an even number of outermost electrons is not particularly limited, but considering safety, availability, etc., Be, Mg, Si, Ca, Sc, Ti, V, Mn Fe, Co, Ni, Zn, Sr, Zr, Pd, Sn, Ba, Ta, W, Os, Ge, Ir, and Pb are preferable. These metals may be added alone or in combination of two or more.

本発明に用いる樹脂祖生物は、ホウ素、窒素、ハロゲン元素、ナトリウム、アンチモン、モリブデン、及びビスマス原子の総和量が０．３重量％以下であることを満足すれば、これまで半導体封止用に用いられてきた樹脂組成物の原材料や技術を自由に使うことができる。例えばエポキシ樹脂組成物、フェノール樹脂組成物、メラミン樹脂組成物等が挙げられ、樹脂の種類、充填剤の種類、添加剤の種類や添加量などを制限するものではない。これらの樹脂組成物のうちでは、エポキシ樹脂組成物がより好ましい。   If the resin progeny used in the present invention satisfies that the total amount of boron, nitrogen, halogen elements, sodium, antimony, molybdenum, and bismuth atoms is 0.3% by weight or less, it has hitherto been used for semiconductor encapsulation. The raw materials and techniques of the resin composition that have been used can be freely used. For example, an epoxy resin composition, a phenol resin composition, a melamine resin composition, etc. are mentioned, and the kind of resin, the kind of filler, the kind and amount of additive, etc. are not limited. Among these resin compositions, an epoxy resin composition is more preferable.

先に挙げたホウ素、窒素、ナトリウム、アンチモン、モリブデン、及びビスマスは、金の中に不純物として拡散・浸入すると、１２５℃以上の高温で長時間放置した場合など、金の中の格子上をアルミニウム原子が移動する際に、空隙同士を集まりやすくする性質があり、カーケンダルボイドの生成を加速させてしまう。また、ハロゲン元素は金の中に拡散したアルミニウム原子を容易に酸化し、接合部の合金を金とアルミニウム酸化物に分離してしまう。これらの原子は金ワイヤの添加剤として用いられることはあまりないが、樹脂組成物には硬化促進剤、難燃剤等として配合されることが少なくない。このように樹脂組成物の添加剤として用いられる場合は、熱的に安定な化合物の形で用いられるのが通常であるが、高温で長期間放置する間に一部が原子状またはイオンとして解離し、接合部に不具合をきたす。これらの原子の量としては総計が０．３％以下であり、これを越えると単一でも、複数の組合せでも高温での信頼性の低下が見られ好ましくない。   Boron, nitrogen, sodium, antimony, molybdenum, and bismuth mentioned above diffused and infiltrated as impurities into gold, and when left at a high temperature of 125 ° C or higher for a long time, aluminum on the lattice in gold When atoms move, they tend to gather voids and accelerate the generation of Kirkendall voids. In addition, the halogen element easily oxidizes aluminum atoms diffused into gold, and separates the alloy at the joint into gold and aluminum oxide. These atoms are rarely used as an additive for gold wires, but are often blended in resin compositions as curing accelerators, flame retardants, and the like. When used as an additive in a resin composition as described above, it is usually used in the form of a thermally stable compound, but partly dissociates as an atom or ion while left at high temperature for a long period of time. However, it causes a defect in the joint. The total amount of these atoms is 0.3% or less, and if it exceeds this, the reliability at a high temperature is lowered in either a single or a plurality of combinations, which is not preferable.

樹脂組成物中のホウ素およびハロゲン元素の量は、樹脂組成物をフラスコ燃焼法で前処理した後、イオンクロマト法で定量することができ、窒素はケルダール法で前処理した後、イオンクロマト法で定量することができる。また、アンチモン、モリブデンおよびビスマスの量は、酸を用いて分解した後、原子吸光法で定量することができる。   The amount of boron and halogen elements in the resin composition can be quantified by ion chromatography after pretreatment of the resin composition by a flask combustion method, and nitrogen is pretreated by Kjeldahl and then ion chromatography. It can be quantified. The amounts of antimony, molybdenum and bismuth can be quantified by atomic absorption after decomposing with an acid.

本発明のアルミパッド、金ワイヤ、樹脂組成物を用いて半導体装置を製造するには、従来のウェハ製造プロセス、ダイシング装置、リードフレーム、チップマウント材、ワイヤボンダー、成形装置等を用いればよく、特にその製造プロセスを限定したり変更したりする必要はない。   In order to manufacture a semiconductor device using the aluminum pad, gold wire, and resin composition of the present invention, a conventional wafer manufacturing process, dicing apparatus, lead frame, chip mount material, wire bonder, molding apparatus, etc. may be used. In particular, there is no need to limit or change the manufacturing process.

以下、本発明を実施例にて具体的に説明するが、本発明を記載する実施例に制限するものではない。
実施例１
金ワイヤ１：Ｐｄ含有率０．００１重量％、太さ３０μｍ
アルミパッド１：１００×１００μｍ、厚み１．２μｍ
チップ：７×７ｍｍ、厚み０．３５ｍｍ
封止用樹脂組成物１：
エポキシ樹脂（ジャパンエポキシレジン（株）・製、ＹＸ−４０００Ｈ、融点１０５℃、エポキシ当量１９１） ６．０重量部
フェノールノボラック樹脂（軟化点６５℃、水酸基当量１０４） ３．０重量部
球状溶融シリカ ９０．５重量部
トリフェニルホスフィン ０．１重量部
カルナバワックス ０．２重量部
カーボンブラック ０．２重量部
をミキサーにて常温混合し、８０〜１００℃の加熱ロールで溶融混練し、冷却後粉砕し、エポキシ樹脂組成物を得た。
（ホウ素（Ｂ）０重量％、窒素（Ｎ）０重量％、ハロゲン元素０．００２重量％、ナトリウム（Ｎａ）０．００１重量％、アンチモン（Ｓｂ）０重量％、モリブデン（Ｍｏ）０重量％、ビスマス（Ｂｉ）０重量％） EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples. However, the present invention is not limited to the examples described.
Example 1
Gold wire 1: Pd content 0.001% by weight, thickness 30 μm
Aluminum pad 1: 100 × 100μm, thickness 1.2μm
Chip: 7x7mm, thickness 0.35mm
Sealing resin composition 1:
Epoxy resin (Japan Epoxy Resin Co., Ltd., YX-4000H, melting point 105 ° C., epoxy equivalent 191) 6.0 parts by weight Phenol novolac resin (softening point 65 ° C., hydroxyl group equivalent 104) 3.0 parts by weight Spherical fused silica 90.5 parts by weight Triphenylphosphine 0.1 parts by weight Carnauba wax 0.2 parts by weight Carbon black 0.2 parts by weight is mixed at room temperature with a mixer, melt-kneaded with a heating roll at 80 to 100 ° C., cooled and pulverized. An epoxy resin composition was obtained.
(Boron (B) 0 wt%, Nitrogen (N) 0 wt%, Halogen 0.002 wt%, Sodium (Na) 0.001 wt%, Antimony (Sb) 0 wt%, Molybdenum (Mo) 0 wt% Bismuth (Bi) 0% by weight)

評価方法
ワイヤボンド性：上記の金ワイヤおよびチップを用い、Ｋａｉｊｏ社製ワイヤボンダーＦＢ１３１で荷重２５ｇ、超音波周波数６０ｋＨｚ、接合温度２００℃の条件で、８０ｐＱＦＰを組み立てた。張り上げた金ワイヤを引っ張った時に接合面で破断するものを不合格、金ワイヤの一部が破断するものを合格とした。
高温信頼性：タブレット化した上記の封止用樹脂組成物を用い、８０ｐＱＦＰ（１４×２０ｍｍ、２．７ｍｍ厚）を低圧トランスファー成形機にて、１８０℃、注入圧６．９ＭＰａ 、保圧時間３５秒の条件で成形した。得られた８０ｐＱＦＰを１７５℃で４時間ポストキュアした後、２００℃のオーブン中で１０００時間熱処理し、処理後に端子間の抵抗値を測定した。処理前にくらべ抵抗値が１．０倍以上、１．２倍以下のものを○（合格）、１．２倍を超え１０倍以下のものを△、１０倍を超えるものを×とした（ｎ＝２０）。 Evaluation method Wire bond property: Using the above-mentioned gold wire and chip, 80 pQFP was assembled with a wire bonder FB131 manufactured by Kaijo under the conditions of a load of 25 g, an ultrasonic frequency of 60 kHz, and a bonding temperature of 200 ° C. A test piece that failed at the joint surface when the stretched gold wire was pulled was rejected, and a test piece that broke part of the gold wire was accepted.
High temperature reliability: Using the above-mentioned encapsulating resin composition for tableting, 80 pQFP (14 × 20 mm, 2.7 mm thickness) is 180 ° C., injection pressure 6.9 MPa, pressure holding time 35 with a low-pressure transfer molding machine Molding was performed under the condition of seconds. The obtained 80pQFP was post-cured at 175 ° C. for 4 hours and then heat-treated in an oven at 200 ° C. for 1000 hours, and the resistance value between terminals was measured after the treatment. Prior to treatment, those having resistance values of 1.0 times or more and 1.2 times or less were evaluated as ◯ (passed), those exceeding 1.2 times and 10 times or less were evaluated as △, and those exceeding 10 times were evaluated as × ( n = 20).

実施例２〜９、比較例１〜９
表１記載の金ワイヤ、アルミパッド、封止用樹脂組成物を用い、実施例１と同様にしてワイヤボンド性および高温信頼性を評価した。結果を表１に示す。
実施例１以外で用いた金ワイヤ２〜５は、そのＰｄ含有量のみが金ワイヤ１と異なるのみである。
実施例１以外で用いたアルミパッド２、３は、その厚みのみがアルミパッド１と異なるのみである。
封止用樹脂組成物２〜１１は、表１のとおりであり、それぞれのホウ素、窒素、フッ素、ナトリウム、塩素、臭素、沃素、アンチモン、モリブデン、及びビスマス原子の量、並びにそれらの総和量は、表１に記載のとおりである。 Examples 2-9, Comparative Examples 1-9
Using the gold wire, the aluminum pad, and the sealing resin composition described in Table 1, the wire bondability and the high temperature reliability were evaluated in the same manner as in Example 1. The results are shown in Table 1.
The gold wires 2 to 5 used in other than Example 1 are different from the gold wire 1 only in the Pd content.
The aluminum pads 2 and 3 used in other than Example 1 are different from the aluminum pad 1 only in thickness.
The encapsulating resin compositions 2 to 11 are as shown in Table 1. The amounts of boron, nitrogen, fluorine, sodium, chlorine, bromine, iodine, antimony, molybdenum, and bismuth atoms, and the total amount thereof are as follows. Are as described in Table 1.

Figure 2006032643
Figure 2006032643

実施例１０〜１５、比較例１０〜１３
表２記載の金ワイヤを用いた他は、実施例１と同一のアルミパッド、封止用樹脂組成物を用い、実施例１と同様にしてワイヤボンド性および高温信頼性を評価した。結果を表２に示す。
実施例１０及び比較例１０は、表２に記載した添加量のＢｅを含有する金ワイヤを用いたものである。
実施例１１及び比較例１１は、表２に記載した添加量のＣａを含有する金ワイヤを用いたものである。
実施例１２及び比較例１２は、表２に記載した添加量のＢｅとＰｄを含有する金ワイヤを用いたものである。
実施例１３〜１５及び比較例１３は、表２に記載した添加量のＧｅを含有する金ワイヤを用いたものである。 Examples 10-15, Comparative Examples 10-13
Except for using the gold wires listed in Table 2, the same aluminum pad and sealing resin composition as in Example 1 were used, and wire bondability and high temperature reliability were evaluated in the same manner as in Example 1. The results are shown in Table 2.
In Example 10 and Comparative Example 10, a gold wire containing the addition amount of Be described in Table 2 was used.
In Example 11 and Comparative Example 11, a gold wire containing the added amount of Ca described in Table 2 was used.
In Example 12 and Comparative Example 12, gold wires containing the addition amounts of Be and Pd described in Table 2 were used.
Examples 13 to 15 and Comparative Example 13 use gold wires containing the added amounts of Ge listed in Table 2.

Figure 2006032643
Figure 2006032643

本発明に従うと、従来技術では得られなかった高温での信頼性に優れた半導体装置を得ることができるため、車載用途など高温環境下で使用される半導体装置に好適に用いることができる。   According to the present invention, it is possible to obtain a semiconductor device excellent in reliability at a high temperature that could not be obtained by the prior art, and thus can be suitably used for a semiconductor device used in a high temperature environment such as in-vehicle use.

Claims (2)

半導体素子と外部端子とがアルミパッド及び金ワイヤを介して接合され、少なくとも前記半導体素子、アルミパッド、及び金ワイヤを、樹脂組成物を用いて封止してなる半導体装置において、前記アルミパッドの厚みが０．１μｍ以上、３μｍ以下であり、前記金ワイヤが高純度金に最外廓電子の数が偶数である金属を０．００１〜１重量％含み、かつ前記樹脂組成物中に含まれるホウ素、窒素、ハロゲン元素、ナトリウム、アンチモン、モリブデン及びビスマス原子の総和量が０．３重量％以下であることを特徴とする半導体装置。 In a semiconductor device in which a semiconductor element and an external terminal are joined via an aluminum pad and a gold wire, and at least the semiconductor element, the aluminum pad, and the gold wire are sealed using a resin composition, Thickness is 0.1 μm or more and 3 μm or less, and the gold wire contains 0.001 to 1% by weight of metal having an even number of outermost electrons in high-purity gold, and is contained in the resin composition. A semiconductor device, wherein the total amount of boron, nitrogen, halogen element, sodium, antimony, molybdenum, and bismuth atoms is 0.3% by weight or less. 前記最外廓電子の数が偶数である金属が、Ｂｅ、Ｍｇ、Ｓｉ、Ｃａ、Ｓｃ、Ｔｉ、Ｖ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｚｎ、Ｓｒ、Ｚｒ、Ｐｄ、Ｓｎ、Ｂａ、Ｔａ、Ｗ、Ｏｓ、Ｇｅ、Ｉｒ及びＰｂから選ばれる少なくとも１種以上の金属である請求項１記載の半導体装置。 The metal having an even number of outermost electrons is Be, Mg, Si, Ca, Sc, Ti, V, Mn, Fe, Co, Ni, Zn, Sr, Zr, Pd, Sn, Ba, Ta, 2. The semiconductor device according to claim 1, wherein the semiconductor device is at least one metal selected from W, Os, Ge, Ir, and Pb.
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