JP2000040710A - Gold alloy fine wire for bonding - Google Patents

Gold alloy fine wire for bonding

Info

Publication number
JP2000040710A
JP2000040710A JP10208741A JP20874198A JP2000040710A JP 2000040710 A JP2000040710 A JP 2000040710A JP 10208741 A JP10208741 A JP 10208741A JP 20874198 A JP20874198 A JP 20874198A JP 2000040710 A JP2000040710 A JP 2000040710A
Authority
JP
Japan
Prior art keywords
bonding
ball
wtppm
gold alloy
fine wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10208741A
Other languages
Japanese (ja)
Inventor
Masao Naito
雅夫 内藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP10208741A priority Critical patent/JP2000040710A/en
Publication of JP2000040710A publication Critical patent/JP2000040710A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To make an Au alloy fine wire correspond to a narrow pad pitch by a method, wherein the damage in device and the cracking in the below pad part are suppressed without deteriorating the strength in conventional Au alloy fine wire and the heat treatment strength also improving the circularity of a pressure fixing ball. SOLUTION: In this Au alloy fine wire, Au in purity exceeding 99.99 wt.% contains 2-50 wt.pm of Sn and 1-100 wt.ppm of at least one kind of element from among Ti, Zr, Hf, V, Nb, Cr, Mo, W, Mn, Fe, Co, Cu, or Ag or 1-50 wt. ppm of at least one kind of element from among Be, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu. Furthermore, 3-100 wt.ppm of at least one kind of element from among Ru, Rh, Pd, Os, Ir, Pt, or/and 2-5-wt.ppm of at least one kind of element from among B, Al, Ga, In, Si, Ge, Pb.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体素子上のチ
ップ電極と外部リードを電気的に接続するために用いら
れるボンディング用金合金細線に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gold alloy thin wire for bonding which is used for electrically connecting a chip electrode on a semiconductor element to an external lead.

【０００２】[0002]

【従来の技術】従来より、ＩＣ、ＬＳＩ等の半導体素子
上のチップ電極と外部リードとの電気的接続には、ボン
ダーを用いた金合金細線による接続が広く利用されてい
る。近年、生産性向上のためのボンダーの高速化に伴
い、より強度、耐熱強度の強い金合金細線が要求され、
純度９９．９９重量％以上の高純度金にＣａ、Ｂｅ、Ｇ
ｅを含有させた金合金細線（特公昭５７−３５５７７号
公報）や、Ｌａ等の希土類元素及びＣａ、Ｂｅ、Ｇｅを
含有させた金合金細線（特公平２−１２０２２号公報）
等の提案がなされている。2. Description of the Related Art Conventionally, a gold alloy thin wire using a bonder has been widely used for electrical connection between a chip electrode on a semiconductor element such as an IC or LSI and an external lead. In recent years, with the speeding up of bonders to improve productivity, gold alloy fine wires with stronger strength and heat resistance have been required,
Ca, Be, G on high purity gold with a purity of 99.99% by weight or more
e-containing gold alloy wires (Japanese Patent Publication No. 57-35577) and rare earth elements such as La and gold alloy thin wires containing Ca, Be, and Ge (Japanese Patent Publication No. 2-12022).
Proposals such as have been made.

【０００３】一方、半導体デバイスの高集積度化は電極
構造の微細、薄膜化へとつながり、接続時の衝撃加重や
超音波振動によるデバイスの損傷や電極パッド下の微小
クラックの発生が危惧されつつある。近年の金合金細線
の高強度化はますますその危険性を高めるため、Ｃａ、
Ｂｅ、希土類元素のうち少なくとも一種を添加したＡｕ
にＳｎを含有させることで、これらの問題点を解消する
提案（特開平８-８８２４２号公報）もなされている。On the other hand, higher integration of semiconductor devices leads to finer and thinner electrode structures, and there is a growing concern that damage to devices due to impact load and ultrasonic vibration during connection and micro cracks under electrode pads may occur. is there. In recent years, the strengthening of gold alloy wires has become increasingly more dangerous, so Ca,
Be, Au added with at least one of rare earth elements
There is also a proposal (Japanese Patent Laid-Open Publication No. 8-88242) for solving these problems by incorporating Sn into the steel.

【０００４】しかしながら更なる半導体デバイスの高密
度化の進展は、電極面積の縮小及び狭ピッチ化を推進さ
せ、新たに従来よりも小さい径のボールが安定的に形成
できることと、隣接電極間の接触を避けるためにボンデ
ィングにより潰れたボール（以下、「圧着ボール」とい
う）の真円度が高いことが要求されるようになってき
た。従来より径の小さいボールを安定的に形成するため
に、近年ボンダーのアーク放電機構の改良がされつつあ
るが、圧着ボールの真円度向上のためには金細線側の改
良も必要とされている。However, further development of high density of semiconductor devices has promoted reduction of the electrode area and narrowing of the pitch, and new ball having a smaller diameter than the conventional one can be formed stably. In order to avoid this, it has been required that a ball crushed by bonding (hereinafter referred to as a “crimped ball”) has a high roundness. In recent years, the arc discharge mechanism of the bonder has been improved in order to stably form a ball having a smaller diameter than in the past.However, in order to improve the roundness of the press-bonded ball, it is necessary to improve the gold wire side. I have.

【０００５】[0005]

【発明が解決しようとする課題】本発明は上記の要求に
応えるために、従来の金合金細線のもつ強度、耐熱強度
を損なうことなく、デバイスの損傷やパッド下のクラッ
クの発生を抑え、かつ圧着ボールの真円度向上をなし得
ることで、狭パットピッチにも対応できるボンディング
用金合金細線を提供することを目的とする。SUMMARY OF THE INVENTION In order to meet the above-mentioned demands, the present invention suppresses the damage of devices and the occurrence of cracks under pads without impairing the strength and heat resistance of conventional gold alloy thin wires, and An object of the present invention is to provide a bonding gold alloy fine wire that can cope with a narrow pad pitch by improving the roundness of a press-bonded ball.

【０００６】[0006]

【課題を解決するための手段】上記課題を解決するため
の本発明のボンディング用金合金細線は、純度９９．９
９ｗｔ％以上のＡｕに、Ｓｎを２〜５０ｗｔｐｐｍ、Ｔ
ｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆ
ｅ、Ｃｏ、Ｃｕ、または、Ａｇのうちの少なくとも１種
を１〜１００ｗｔｐｐｍ、及び、Ｂｅ、Ｍｇ、Ｃａ、Ｓ
ｒ、Ｂａ、Ｓｃ、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、
Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙ
ｂ、または、Ｌｕのうち少なくとも１種を１〜５０ｗｔ
ｐｐｍ含有することを特徴とする。The gold alloy thin wire for bonding according to the present invention for solving the above problems has a purity of 99.9.
To Au of 9 wt% or more, 2 to 50 wt ppm of Sn and T
i, Zr, Hf, V, Nb, Cr, Mo, W, Mn, F
e, Co, Cu, or Ag in an amount of 1 to 100 wtppm, and Be, Mg, Ca, S
r, Ba, Sc, Y, La, Ce, Pr, Nd, Pm,
Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Y
b or at least one of Lu is 1 to 50 wt.
ppm.

【０００７】また、本発明の他のボンディング用金合金
細線は、上記構成に更に、Ｒｕ、Ｒｈ、Ｐｄ、Ｏｓ、Ｉ
ｒ、Ｐｔのうち少なくとも１種を３〜１００ｗｔｐｐ
ｍ、または／及び、Ｂ、Ａｌ、Ｇａ、Ｉｎ、Ｓｉ、Ｇ
ｅ、Ｐｂのうち少なくとも１種を２〜５０ｗｔｐｐｍ含
有することを特徴とする。Further, another gold alloy wire for bonding according to the present invention further comprises Ru, Rh, Pd, Os, I
at least one of r and Pt is 3 to 100 wtpp
m, and / or B, Al, Ga, In, Si, G
e, containing at least one of Pb and 2 to 50 wtppm.

【０００８】[0008]

【発明の実施の形態】本発明のボンディング用金合金細
線の構成成分であるＳｎは、アーク放電により形成され
るボールの表面硬度を若干低下させ、ボンディングによ
り潰された圧着ボールの硬度を大幅に低減させる。この
効果によりデバイスの損傷やパッド下の微小クラックの
発生防止に効果がある。一方、圧着ボールの径の真円度
を向上させるためには、ボールの結晶粒を微細化させ、
潰された時の変形の異方性を小さくすることが有効と考
えられるが、結晶粒の微細化は硬度増加につながるた
め、デバイスの損傷やパッド下の微小クラックの発生を
促進してしまう欠点がある。BEST MODE FOR CARRYING OUT THE INVENTION Sn, which is a component of the gold alloy thin wire for bonding of the present invention, slightly lowers the surface hardness of a ball formed by arc discharge and greatly increases the hardness of a press-bonded ball crushed by bonding. Reduce. This effect is effective in preventing damage to the device and generation of minute cracks under the pad. On the other hand, in order to improve the roundness of the diameter of the press-bonded ball, the crystal grains of the ball are refined,
It is considered effective to reduce the anisotropy of deformation when crushed.However, the refinement of crystal grains leads to an increase in hardness, resulting in the disadvantage of promoting device damage and the generation of micro cracks under the pad. There is.

【０００９】しかしながら、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、
Ｂａ、Ｓｃ、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓ
ｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙ
ｂ、または、Ｌｕから選ばれる元素のうち少なくとも一
種を添加したＡｕに、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｃ
ｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、Ｃｏ、Ｃｕ、または、Ａｇ
から選ばれる元素と、Ｓｎとを複合添加させることで、
圧着ボールの硬度増加を抑えつつボールの結晶粒を微細
化させる効果があることが見出された。However, Be, Mg, Ca, Sr,
Ba, Sc, Y, La, Ce, Pr, Nd, Pm, S
m, Eu, Gd, Tb, Dy, Ho, Er, Tm, Y
b, or Au to which at least one element selected from Lu is added, Ti, Zr, Hf, V, Nb, C
r, Mo, W, Mn, Fe, Co, Cu, or Ag
By adding an element selected from and Sn in combination,
It has been found that there is an effect of refining crystal grains of the ball while suppressing an increase in hardness of the pressure-bonded ball.

【００１０】本発明におけるＳｎの添加量は、２ｗｔｐ
ｐｍ未満では上記効果を発揮させるのに不十分であり、
５０ｗｔｐｐｍを超えるとボール形成時に接合強度の低
下につながる引け巣が生じてボールが真球にならないこ
とがあるので、２〜５０ｗｔｐｐｍとした。In the present invention, the amount of Sn added is 2 wtp.
If it is less than pm, it is insufficient to exert the above effect,
If it exceeds 50 wtppm, shrinkage cavities may be formed during the formation of the ball, which may lead to a decrease in bonding strength, and the ball may not be perfectly spherical.

【００１１】Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｃｒ、Ｍ
ｏ、Ｗ、Ｍｎ、Ｆｅ、Ｃｏ、Ｃｕ、または、Ａｇのうち
少なくとも１種の添加量は、２ｗｔｐｐｍ未満ではボー
ルの結晶粒微細化の効果が不十分であり、１００ｗｔｐ
ｐｍを超えるとＳｎと同じくボール形成時に引け巣など
が生じて真球にならないことがあるので、２〜１００ｗ
ｔｐｐｍとした。Ti, Zr, Hf, V, Nb, Cr, M
If the addition amount of at least one of o, W, Mn, Fe, Co, Cu, and Ag is less than 2 wtppm, the effect of refining the crystal grains of the ball is insufficient, and 100 wtp
If it exceeds pm, shrinkage cavities and the like may occur during ball formation as in the case of Sn, and the ball may not become a true sphere.
tppm.

【００１２】Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｓｃ、
Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇ
ｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、または、Ｌ
ｕから選ばれる元素には、金合金細線の常温強度、耐熱
強度を向上させる効果がある。その効果は添加量が１ｗ
ｔｐｐｍ未満では不十分であり、５０ｗｔｐｐｍを超え
るとボール形成時に引け巣が生じることがあるので、添
加量は１〜５０ｗｔｐｐｍとした。Be, Mg, Ca, Sr, Ba, Sc,
Y, La, Ce, Pr, Nd, Pm, Sm, Eu, G
d, Tb, Dy, Ho, Er, Tm, Yb, or L
The element selected from u has the effect of improving the room-temperature strength and heat-resistant strength of the gold alloy fine wire. The effect is as follows:
If it is less than tppm, it is not sufficient, and if it exceeds 50 wtppm, shrinkage cavities may occur during ball formation.

【００１３】Ｒｕ、Ｒｈ、Ｐｄ、Ｏｓ、Ｉｒ、または、
Ｐｔから選ばれる元素は、常温強度、耐熱強度を向上さ
せる効果は数１００ｗｔｐｐｍ程度までの添加量ではあ
まり期待できないが、ボンディング時の圧着ボールとパ
ッドとの接合力を高める効果がある。添加量が３ｗｔｐ
ｐｍ未満ではその効果が不十分であり、添加量を増やし
ていくと次第にその効果は飽和していき、１００ｗｔｐ
ｐｍを超えるともはや増量効果が見られなくなるので、
３〜１００ｗｔｐｐｍを適正添加量範囲とした。Ru, Rh, Pd, Os, Ir, or
An element selected from Pt has an effect of improving the room-temperature strength and the heat-resistant strength, but cannot be expected very much with an addition amount up to about several hundred wtppm, but has an effect of increasing the bonding strength between the press-bonded ball and the pad during bonding. Addition amount is 3wtp
When the amount is less than 100 ppm, the effect is insufficient.
pm, the effect of increasing the volume is no longer seen.
The appropriate addition amount range was 3 to 100 wtppm.

【００１４】Ｂ、Ａｌ、Ｇａ、Ｉｎ、Ｓｉ、Ｇｅ、また
は、Ｐｂから選ばれる元素は、若干常温強度を向上させ
る効果があるが、それ以上に再結晶領域の長さのばらつ
きを小さくしてボンディング時のループ高さのばらつき
を抑えたり、常温強度のばらつきを抑制する効果があ
る。これらの添加量が２ｗｔｐｐｍ未満ではその効果が
見られず、増量とともにその効果が飽和するとともに、
５０ｗｔｐｐｍを超えるとボール形成時に引け巣を発生
させることがあるので、２〜５０ｗｔｐｐｍを添加量と
した。An element selected from B, Al, Ga, In, Si, Ge, or Pb has an effect of slightly improving the strength at ordinary temperature, but further reduces the variation in the length of the recrystallization region. This has the effect of suppressing variations in loop height during bonding and suppressing variations in room temperature strength. When the added amount is less than 2 wtppm, the effect is not seen, and the effect is saturated with an increase in the amount.
If it exceeds 50 wtppm, shrinkage cavities may be generated during the formation of the ball.

【００１５】[0015]

【実施例】以下、本発明の実施例について説明する。純
度９９．９９ｗｔ％以上の高純度Ａｕに、表１に示す各
元素を添加して高周波誘導加熱炉により各鋳塊を作製し
た。これらを適宜歪み取りのための熱処理を施しながら
溝ロール圧延、ダイス線引きを順次行い、最終線径２５
ｍｍの金合金細線とし、最後に大気雰囲気中で連続焼鈍
して伸び率が約５％となるように調整して試料を得た。Embodiments of the present invention will be described below. Each element shown in Table 1 was added to high-purity Au having a purity of 99.99 wt% or more, and each ingot was produced using a high-frequency induction heating furnace. These are subjected to groove roll rolling and die drawing in sequence while appropriately performing a heat treatment for removing distortion to obtain a final wire diameter of 25 mm.
A gold alloy thin wire having a thickness of 1 mm was obtained, and finally, continuous annealing was performed in an air atmosphere to adjust the elongation to about 5% to obtain a sample.

【００１６】これらの試料を引張試験機により常温強度
と、２５０℃に２０秒間保持した状態での耐熱強度を測
定した。These samples were measured for tensile strength at room temperature and tensile strength at 250 ° C. for 20 seconds using a tensile tester.

【００１７】次に、高速自動ボンダーを用いて、ボール
の直径が５０ｍｍとなる放電条件でボールを形成した。
ボール形状の観察は電子顕微鏡を用いて、２０個作製し
たボールのうち１個でも引け巣が観察された組成をボー
ル形状不良とした。Next, using a high-speed automatic bonder, balls were formed under discharge conditions such that the diameter of the balls was 50 mm.
Observation of the ball shape was performed using an electron microscope, and a composition in which shrinkage cavities were observed in at least one of the 20 manufactured balls was regarded as a ball shape defect.

【００１８】圧着ボールの硬度は、ＩＣを搭載したリー
ドフレームのチップ電極と外部リード間をボンディング
した時の圧着ボールの硬度を微小高度計により測定し
た。The hardness of the pressure-bonded ball was determined by measuring the hardness of the pressure-bonded ball at the time of bonding between the chip electrode of the lead frame on which the IC was mounted and the external lead using a micro altimeter.

【００１９】デバイスの損傷の評価は、ＩＣを搭載した
リードフレームのチップ電極と外部リード間をボンディ
ングした後に、チップ電極のＡｌを化学処理して電極か
ら圧着ボールを剥がし、パッド下層のクラックの発生の
有無を金属顕微鏡により観察した。判定は１００箇所観
察したチップ電極のうち１箇所でもクラックの発生があ
ればデバイスの損傷有りとした。The damage of the device is evaluated by bonding the chip electrode of the lead frame on which the IC is mounted and the external lead, then chemically treating the Al of the chip electrode, peeling the compression ball from the electrode, and generating cracks in the lower layer of the pad. Was observed with a metallographic microscope. Judgment was made that the device was damaged if cracks occurred even in one of the chip electrodes observed in 100 places.

【００２０】圧着ボールの真円度は、ＩＣを搭載したリ
ードフレームのチップ電極と外部リード間をボンディン
グした時の圧着ボールで、圧着ボールの中心点を通る線
上の圧着ボール直径を３６０°回転させながら測定し、
ａ＝（最大直径）／（最小直径）の値により評価した。
なお通常のボンディングでは超音波印加を行うが、超音
波振動によりボールが振動方向に引き伸ばされるので、
真円度の測定では超音波印加は行わなかった。判定は、
ａ≧１．０５を「×」、 ａ≧１．０２ を「△」、
ａ＜１．０２ を「○」とした。以上の結果を表１に
示す。The roundness of the press-bonded ball is determined by rotating the diameter of the press-bonded ball on the line passing through the center point of the press-bonded ball by 360 ° when the chip electrode of the lead frame on which the IC is mounted and the external lead are bonded. While measuring,
a = (maximum diameter) / (minimum diameter).
In normal bonding, ultrasonic waves are applied, but since the ball is stretched in the vibration direction by ultrasonic vibration,
In the measurement of the roundness, no ultrasonic wave was applied. The judgment is
a ≧ 1.05 is “×”, a ≧ 1.02 is “△”,
a <1.02 was evaluated as “○”. Table 1 shows the above results.

【００２１】[0021]

【表１】 [Table 1]

【００２２】表１に示されるように、本発明の金合金細
線（実施例、試料番号１〜１４）は、高い常温、耐熱強
度を有してボール形状が良好である上に、圧着ボールの
硬度が低いためにデバイスの損傷がなく、かつ圧着ボー
ルの真円度にも優れていることが分かる。As shown in Table 1, the gold alloy thin wires of the present invention (Examples, Sample Nos. 1 to 14) have high room temperature, heat resistance, good ball shape, It can be seen that since the hardness is low, there is no damage to the device and the roundness of the press-bonded ball is excellent.

【００２３】一方、Ｓｎの添加されていない試料番号１
５、１６では圧着ボールの硬度が高いためにデバイスの
損傷を引き起こしている。また試料番号１６では、Ｔｉ
が２０ｗｔｐｐｍ添加されているにもかかわらずＳｎが
添加されていないために圧着ボールの真円度は劣ってい
る。Ｓｎが１０ｗｔｐｐｍ添加されているのに、Ｔｉ、
Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、
Ｃｏ、Ｃｕ、または、Ａｇから選ばれる元素が添加され
ていない試料番号１７は、圧着ボールの真円度に劣る。On the other hand, Sample No. 1 to which Sn was not added
In Nos. 5 and 16, the hardness of the press-bonded ball is high, causing damage to the device. In sample No. 16, Ti
, The roundness of the press-bonded ball is inferior because Sn is not added even though 20 wtppm is added. Although Sn is added at 10 wtppm, Ti,
Zr, Hf, V, Nb, Cr, Mo, W, Mn, Fe,
Sample No. 17 to which an element selected from Co, Cu, or Ag was not added, was inferior in roundness of the press-bonded ball.

【００２４】Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｓｃ、
Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇ
ｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、または、Ｌ
ｕから選ばれた元素の添加量が５０ｗｔｐｐｍを超える
試料番号１８、Ｔｉの添加量が１００ｗｔｐｐｍを超え
る試料番号１９、Ｓｎの添加量が５０ｗｔｐｐｍを超え
る試料番号２０、２１は、ともにボール形成時に引け巣
が発生することがある。Be, Mg, Ca, Sr, Ba, Sc,
Y, La, Ce, Pr, Nd, Pm, Sm, Eu, G
d, Tb, Dy, Ho, Er, Tm, Yb, or L
Sample No. 18 in which the addition amount of the element selected from u exceeds 50 wtppm, Sample No. 19 in which the addition amount of Ti exceeds 100 wtppm, and Sample Nos. 20 and 21 in which the addition amount of Sn exceeds 50 wtppm, are both shrinkage cavities during ball formation. May occur.

【００２５】さらに試料番号２０は、Ｔｉ、Ｚｒ、Ｈ
ｆ、Ｖ、Ｎｂ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、Ｃｏ、Ｃ
ｕ、または、Ａｇから選ばれる元素が添加されていない
ために、圧着ボールの真円度が劣ることも分かる。Sample No. 20 is composed of Ti, Zr, H
f, V, Nb, Cr, Mo, W, Mn, Fe, Co, C
It can also be seen that the roundness of the press-bonded ball is inferior because no element selected from u or Ag is added.

【００２６】[0026]

【発明の効果】以上より、本発明のボンディング用金合
金細線は、従来の金合金細線のもつ強度、耐熱強度を損
なうことなく、デバイスの損傷やパッド下のクラックの
発生を抑え、かつ圧着ボールの真円度向上をなし得るこ
とで、狭パットピッチでのボンディングを可能とする工
業上極めて有用な特性を有している。As described above, the gold alloy thin wire for bonding according to the present invention suppresses the damage of the device and the occurrence of cracks under the pad, and the pressure bonding ball without impairing the strength and heat resistance of the conventional gold alloy thin wire. It has an industrially extremely useful characteristic of enabling the bonding at a narrow pad pitch by improving the roundness of the substrate.

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 純度９９．９９ｗｔ％以上のＡｕに、Ｓ
ｎを２〜５０ｗｔｐｐｍ、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎ
ｂ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、Ｃｏ、Ｃｕ、また
は、Ａｇのうちの少なくとも１種を１〜１００ｗｔｐｐ
ｍ、及び、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｓｃ、Ｙ、
Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔ
ｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、または、Ｌｕのう
ち少なくとも１種を１〜５０ｗｔｐｐｍ含有することを
特徴とするボンディング用金合金細線。(1) Au having a purity of 99.99 wt% or more is added to S
n is 2 to 50 wtppm, Ti, Zr, Hf, V, N
b, Cr, Mo, W, Mn, Fe, Co, Cu, or Ag at least one of 1 to 100 wtpp
m, and Be, Mg, Ca, Sr, Ba, Sc, Y,
La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, T
A fine gold alloy wire for bonding, characterized by containing at least one of b, Dy, Ho, Er, Tm, Yb, and Lu in an amount of 1 to 50 wtppm. 【請求項２】 純度９９．９９ｗｔ％以上のＡｕに、Ｓ
ｎを２〜５０ｗｔｐｐｍ、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎ
ｂ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、Ｃｏ、Ｃｕ、また
は、Ａｇのうちの少なくとも１種を１〜１００ｗｔｐｐ
ｍ、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｓｃ、Ｙ、Ｌａ、
Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄ
ｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、または、Ｌｕのうち少な
くとも１種を１〜５０ｗｔｐｐｍ、及び、Ｒｕ、Ｒｈ、
Ｐｄ、Ｏｓ、Ｉｒ、Ｐｔのうち少なくとも１種を３〜１
００ｗｔｐｐｍ含有することを特徴とするボンディング
用金合金細線。2. The method according to claim 1, wherein Au having a purity of 99.99 wt% or more is added to S
n is 2 to 50 wtppm, Ti, Zr, Hf, V, N
b, Cr, Mo, W, Mn, Fe, Co, Cu, or Ag at least one of 1 to 100 wtpp
m, Be, Mg, Ca, Sr, Ba, Sc, Y, La,
Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, D
y, Ho, Er, Tm, Yb, or at least one of Lu is 1 to 50 wtppm, and Ru, Rh,
At least one of Pd, Os, Ir, and Pt is 3-1
A gold alloy fine wire for bonding, characterized by containing 00 wtppm. 【請求項３】 純度９９．９９ｗｔ％以上のＡｕに、Ｓ
ｎを２〜５０ｗｔｐｐｍ、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎ
ｂ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、Ｃｏ、Ｃｕ、また
は、Ａｇのうちの少なくとも１種を１〜１００ｗｔｐｐ
ｍ、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｓｃ、Ｙ、Ｌａ、
Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄ
ｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、または、Ｌｕのうち少な
くとも１種を１〜５０ｗｔｐｐｍ、及び、Ｂ、Ａｌ、Ｇ
ａ、Ｉｎ、Ｓｉ、Ｇｅ、Ｐｂのうち少なくとも１種を２
〜５０ｗｔｐｐｍ含有することを特徴とするボンディン
グ用金合金細線。3. The method according to claim 1, wherein Au having a purity of 99.99 wt% or more is added to S
n is 2 to 50 wtppm, Ti, Zr, Hf, V, N
b, Cr, Mo, W, Mn, Fe, Co, Cu, or Ag at least one of 1 to 100 wtpp
m, Be, Mg, Ca, Sr, Ba, Sc, Y, La,
Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, D
y, Ho, Er, Tm, Yb, or Lu, at least one of 1 to 50 wtppm, and B, Al, G
a, In, Si, Ge, Pb at least one of 2
A gold alloy fine wire for bonding characterized by containing about 50 wtppm. 【請求項４】 純度９９．９９ｗｔ％以上のＡｕに、Ｓ
ｎを２〜５０ｗｔｐｐｍ、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎ
ｂ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、Ｃｏ、Ｃｕ、また
は、Ａｇのうちの少なくとも１種を１〜１００ｗｔｐｐ
ｍ、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｓｃ、Ｙ、Ｌａ、
Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄ
ｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、または、Ｌｕのうち少な
くとも１種を１〜５０ｗｔｐｐｍ、Ｒｕ、Ｒｈ、Ｐｄ、
Ｏｓ、Ｉｒ、Ｐｔのうち少なくとも１種を３〜１００ｗ
ｔｐｐｍ、及び、Ｂ、Ａｌ、Ｇａ、Ｉｎ、Ｓｉ、Ｇｅ、
Ｐｂのうち少なくとも１種を２〜５０ｗｔｐｐｍ含有す
ることを特徴とするボンディング用金合金細線。4. The method according to claim 1, wherein Au having a purity of 99.99 wt% or more is added to S
n is 2 to 50 wtppm, Ti, Zr, Hf, V, N
b, Cr, Mo, W, Mn, Fe, Co, Cu, or Ag at least one of 1 to 100 wtpp
m, Be, Mg, Ca, Sr, Ba, Sc, Y, La,
Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, D
at least one of y, Ho, Er, Tm, Yb or Lu is 1 to 50 wtppm, Ru, Rh, Pd,
At least one of Os, Ir, and Pt is 3 to 100 watts.
tppm, and B, Al, Ga, In, Si, Ge,
A bonding gold alloy fine wire containing at least one kind of Pb in an amount of 2 to 50 wtppm.
JP10208741A 1998-07-24 1998-07-24 Gold alloy fine wire for bonding Pending JP2000040710A (en)

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