JP3475511B2 - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JP3475511B2 JP3475511B2 JP22124194A JP22124194A JP3475511B2 JP 3475511 B2 JP3475511 B2 JP 3475511B2 JP 22124194 A JP22124194 A JP 22124194A JP 22124194 A JP22124194 A JP 22124194A JP 3475511 B2 JP3475511 B2 JP 3475511B2
- Authority
- JP
- Japan
- Prior art keywords
- gold
- ball
- wire
- bonding wire
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/011—Groups of the periodic table
- H01L2924/01105—Rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体素子上のチップ
電極と、外部リードとを接続するために用いるボンディ
ングワイヤーに関する。
【０００２】
【従来の技術】従来よりＩＣ、ＬＳＩ等の半導体素子上
のチップ電極と外部リードとの結線用として多く用いら
れている金線は、その機械的強度、耐熱強度を向上させ
るために純度９９．９９重量％以上の高純度金に、Ｃ
ａ、Ｂｅ、Ｇｅを含有させた金線（特公昭５７−３５５
７７号公報）、Ｌａ等の希土類元素及び、Ｃａ、Ｂｅ、
Ｇｅを含有させた金線（たとえば特公平２−１２０２２
号公報）等、多くの提案がなされている。一方、近年の
半導体デバイスの高密度、高集積度化による多ピン傾向
は、チップ電極、外部リードの狭ピッチ化、チップ電極
と外部リードとの長距離化へとつながり、より強い機械
的強度、耐熱強度を有する金線が要求されるようになっ
た。
【０００３】しかしながら半導体デバイスの高密度、高
集積度化は、電極構造の微細、多層化や薄膜化へとつな
がり、その結果、ボンディング時の荷重、及び超音波の
衝撃を吸収することがむずかしくなり、デバイスの損傷
や、電極パッド下に微小クラックが発生する等のダメー
ジを受け易い構造となり、金線の高強度化はより大きな
問題となってきた。
【０００４】
【発明が解決しようとする課題】そこで本発明は、従来
の金線が持つ機械的強度、耐熱強度を損なうことなく、
デバイスの損傷やパッド下のクラックを大幅に低減し得
るボンディングワイヤーを提供することを目的とする。
【０００５】
【課題を解決するための手段】上記目的を達成するため
の本発明のボンディングワイヤーは、Ｓｎを２〜５０重
量ｐｐｍと、Ｃａ、Ｂｅのうちの少なくとも一種を１〜
５０重量ｐｐｍとを含有し、残部が純度９９．９９重量
％以上の金である金合金線からなる。
【０００６】
【作用】本発明において、Ｓｎは必須の元素である。従
来のＣａ、Ｂｅのうちの少なくとも一種を添加した金に
Ｓｎを適量添加したところ、従来品に比べ、アーク放電
により形成した金ボールの表面硬度が若干低下し、更に
ボンディングにより金ボールをチップ電極に押し潰した
後のボール硬度、即ちボールの加工硬度が大幅に低減
し、パッド下のクラック等のデバイスの損傷を防ぐ効果
があることが見いだされた。
【０００７】Ｓｎの添加量は、２重量ｐｐｍ未満ではそ
の効果は不十分であり、５０重量ｐｐｍを越えるとボー
ル形成時に真球ボールが形成されにくくなるため、Ｓｎ
の添加量は２〜５０重量ｐｐｍとする。Ｃａ、Ｂｅのう
ちの少なくとも一種の添加は金の結晶格子に歪を与えて
金線の機械的強度、耐熱強度を高める効果があるが、添
加量が１重量ｐｐｍ未満ではその効果は不十分であり、
５０重量ｐｐｍを越えると金ボールの表面に酸化膜が形
成されてチップ電極との接合性が阻害されるようになる
ので、１〜５０重量ｐｐｍとする。
【０００８】
【実施例】純度９９．９９重量％以上の高純度金に、Ｓ
ｎ、Ｃａ、Ｂｅを種々の割合で添加し、高周波誘導加熱
炉で溶解し、表１に示す組成の合金を得た。これらの合
金に溝ロール加工を施し、次に、ダイスを用いた伸線加
工により直径０．０３ｍｍの金線とし、次に、室温での
伸び率が６％となるように連続焼鈍を行いボンディング
ワイヤーを得た。これらのボンディングワイヤーを、引
っ張り試験機を用いて常温での機械的強度と、２５０℃
の雰囲気中に２０秒間保持した状態での高温強度を測定
した。
【０００９】
【表１】
次に、高速自動ボンダーを用いてボールの直径が０．０
６５ｍｍになるような放電条件にてボールを形成し、各
試料のボール形状とボール表面酸化膜の有無を電子顕微
鏡により観察した。次に、メモリー用ＩＣを搭載したリ
ードフレームを用いてチップ電極と外部リード間の連続
ボンディングを行い、圧着した金ボールの表面硬度を微
小硬度計にて測定した。その後、金ボールとチップ電極
のＡｌを化学処理により溶解し、パッド下層のクラック
発生の有無を金属顕微鏡で確認した。これらの結果を表
１に示す。
【００１０】表１に示されたように本発明のボンディン
グワイヤー（試料番号１〜３）は、Ｓｎを添加していな
いボンディングワイヤー（試料番号４）や、Ｓｎの添加
量が本発明の下限未満のボンディングワイヤー（試料番
号５）と比べてパッド下のクラック発生のない良好な結
果が得られた。また、Ｓｎの添加量が本発明の上限を越
えるボンディングワイヤー（試料番号６）は、ボール硬
度は本発明のものと同等でパッド下のクラック発生も見
られなかったが、ボール変形が確認された。
【００１１】
【発明の効果】本発明のボンディングワイヤーは、従来
金線の機械的強度、及び耐熱強度を損なうことなく、ボ
ール形成時のボール変形、及びボール表面への酸化膜形
成もなく、ボンディングの際のボール硬度が低く、デバ
イスの損傷や電極パッド下のクラックの発生を防ぎ、安
定したボンディングが可能である。これより、多ピンデ
バイスの金ボンディングにおける歩留り、信頼性の向上
が図れる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire used for connecting a chip electrode on a semiconductor element and an external lead. 2. Description of the Related Art Conventionally, a gold wire, which has been widely used for connecting a chip electrode on a semiconductor element such as an IC or LSI and an external lead, is to improve its mechanical strength and heat resistance strength. To high-purity gold with a purity of 99.99% by weight or more, C
Gold wire containing a, Be, Ge (Japanese Patent Publication No. 57-355)
77), rare earth elements such as La, and Ca, Be,
A gold wire containing Ge (for example, Japanese Patent Publication No. 2-12022)
Many proposals have been made. On the other hand, the recent trend toward multi-pins due to high density and high integration of semiconductor devices has led to narrower pitches between chip electrodes and external leads, and longer distances between chip electrodes and external leads, resulting in stronger mechanical strength, Gold wires with heat resistance strength have been required. However, high density and high integration of semiconductor devices lead to finer, multilayered and thinned electrode structures, and as a result, it becomes difficult to absorb bonding loads and ultrasonic shocks. The structure of the device is susceptible to damage such as damage to the device and generation of microcracks under the electrode pad, and increasing the strength of the gold wire has become a greater problem. SUMMARY OF THE INVENTION Accordingly, the present invention provides a conventional gold wire without impairing the mechanical strength and heat resistance strength of the conventional gold wire.
An object of the present invention is to provide a bonding wire that can greatly reduce device damage and cracks under the pad. [0005] Means for Solving the Problems The bonding wire of the present invention for achieving the above object, a 2 to 50 ppm by weight Sn, Ca, and at least one of Be. 1 to
50 ppm by weight , the balance being 99.99 wt.
It consists of a gold alloy wire that is at least% gold . In the present invention, Sn is an essential element. When an appropriate amount of Sn is added to gold containing at least one of conventional Ca and Be, the surface hardness of the gold ball formed by arc discharge is slightly lower than that of the conventional product, and the gold ball is further bonded to the tip electrode by bonding. It has been found that the ball hardness after crushing, that is, the processing hardness of the ball, is greatly reduced, and it has the effect of preventing device damage such as cracks under the pad. If the added amount of Sn is less than 2 ppm by weight, the effect is insufficient, and if it exceeds 50 ppm by weight, it is difficult to form a true spherical ball at the time of ball formation.
Is added in an amount of 2 to 50 ppm by weight. The addition of at least one of Ca and Be has the effect of distorting the gold crystal lattice to increase the mechanical strength and heat resistance of the gold wire. However, if the addition amount is less than 1 ppm by weight, the effect is insufficient. Yes,
If it exceeds 50 ppm by weight, an oxide film is formed on the surface of the gold ball and the bondability with the chip electrode is hindered. EXAMPLE High purity gold having a purity of 99.99% by weight or more was added to S
n, Ca, and Be were added at various ratios and melted in a high frequency induction heating furnace to obtain alloys having the compositions shown in Table 1. These alloys are subjected to grooving roll processing, then formed into a gold wire with a diameter of 0.03 mm by wire drawing using a die, and then subjected to continuous annealing so that the elongation at room temperature is 6%. Got a wire. These bonding wires were mechanically tested at room temperature using a tensile tester and 250 ° C.
The high temperature strength in a state of being kept in the atmosphere for 20 seconds was measured. [Table 1] Next, using a high-speed automatic bonder, the ball diameter is 0.0
Balls were formed under discharge conditions of 65 mm, and the ball shape of each sample and the presence or absence of a ball surface oxide film were observed with an electron microscope. Next, continuous bonding between the chip electrode and the external lead was performed using a lead frame equipped with a memory IC, and the surface hardness of the pressed gold ball was measured with a micro hardness meter. Thereafter, the gold balls and Al of the chip electrode were dissolved by chemical treatment, and the presence or absence of cracks in the pad lower layer was confirmed with a metal microscope. These results are shown in Table 1. As shown in Table 1, the bonding wire of the present invention (sample numbers 1 to 3) is a bonding wire not added with Sn (sample number 4), and the amount of Sn added is less than the lower limit of the present invention. Compared with the bonding wire (Sample No. 5), a good result with no occurrence of cracks under the pad was obtained. Further, the bonding wire (Sample No. 6) in which the amount of Sn added exceeded the upper limit of the present invention had a ball hardness equivalent to that of the present invention and no cracks were found under the pad, but ball deformation was confirmed. . The bonding wire of the present invention does not impair the mechanical strength and heat resistance strength of the conventional gold wire, does not deform the ball when forming the ball, and does not form an oxide film on the ball surface. In this case, the ball hardness is low, preventing damage to the device and occurrence of cracks under the electrode pad, and stable bonding is possible. As a result, the yield and reliability in gold bonding of multi-pin devices can be improved.
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 C22C 5/02 Continued from the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/60 C22C 5/02
Claims (1)
ｅのうちの少なくとも一種を１〜５０重量ｐｐｍとを含
有し、残部が純度９９．９９重量％以上の金である金合
金線からなるボンディングワイヤー。(57) [Claims] [Claim 1] Sn of 2 to 50 ppm by weight, Ca, B
A bonding wire comprising a gold alloy wire containing 1 to 50 ppm by weight of at least one of e and the balance being gold having a purity of 99.99% by weight or more .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22124194A JP3475511B2 (en) | 1994-09-16 | 1994-09-16 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22124194A JP3475511B2 (en) | 1994-09-16 | 1994-09-16 | Bonding wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0888242A JPH0888242A (en) | 1996-04-02 |
| JP3475511B2 true JP3475511B2 (en) | 2003-12-08 |
Family
ID=16763684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22124194A Expired - Fee Related JP3475511B2 (en) | 1994-09-16 | 1994-09-16 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3475511B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4513440B2 (en) * | 2004-07-15 | 2010-07-28 | 住友ベークライト株式会社 | Semiconductor device |
| CN100501956C (en) * | 2004-11-26 | 2009-06-17 | 田中电子工业株式会社 | Gold solder wire for semiconductor module |
| CN112002646A (en) * | 2020-08-25 | 2020-11-27 | 湖南方彦半导体有限公司 | Semiconductor packaging process |
-
1994
- 1994-09-16 JP JP22124194A patent/JP3475511B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0888242A (en) | 1996-04-02 |
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