JPS62228440A - Gold wire for semiconductor device bonding - Google Patents

Gold wire for semiconductor device bonding

Info

Publication number
JPS62228440A
JPS62228440A JP61070087A JP7008786A JPS62228440A JP S62228440 A JPS62228440 A JP S62228440A JP 61070087 A JP61070087 A JP 61070087A JP 7008786 A JP7008786 A JP 7008786A JP S62228440 A JPS62228440 A JP S62228440A
Authority
JP
Japan
Prior art keywords
gold
bonding
gold wire
wire
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61070087A
Other languages
Japanese (ja)
Other versions
JPS6360105B2 (en
Inventor
Hideo Taneda
種田　秀雄
Kazuaki Koike
小池　和昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MATSUDA KIKINZOKU KOGYO KK
Original Assignee
MATSUDA KIKINZOKU KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MATSUDA KIKINZOKU KOGYO KK filed Critical MATSUDA KIKINZOKU KOGYO KK
Priority to JP61070087A priority Critical patent/JPS62228440A/en
Publication of JPS62228440A publication Critical patent/JPS62228440A/en
Publication of JPS6360105B2 publication Critical patent/JPS6360105B2/ja
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%

Abstract

PURPOSE:To obtain a gold wire for semiconductor device bonding having high strength at ordinary and high temps. and reduced in loop height, by using pure gold of >=99.99% purity and by adding specific amounts of La and/or Pb and Be and/or Ca to the above. CONSTITUTION:A gold ingot has a composition in which 0.0001-0.006wt% La and/or Pb and 0.002-0.003wt% Be and/or Ca are incorporated to the pure gold of >=99.99% purity containing inevitable impurities. This gold ingot is subjected to wire drawing working to be formed into gold wire for semiconductor device bonding.

Description

【発明の詳細な説明】 産業上の利用分”Ｊ！！ 本発明は半導体素子と外部リードとの電気的接続に用い
られろボンブイノブ用金線に関するものである。DETAILED DESCRIPTION OF THE INVENTION Industrial Application "J!!" The present invention relates to a gold wire for a bomb knob used for electrical connection between a semiconductor element and an external lead.

従来の技既 従来、半導体装置の組立てにおいて、半導体素子と外部
リードをボンディングする金属細線として金線およびア
ルミニウム線が一般に用いられている。これらの中、金
線は耐食性があり且つボンディング性が倒れているので
、国内では金線がアルミニウム線より多く（走用されて
いる。BACKGROUND OF THE INVENTION Conventionally, in the assembly of semiconductor devices, gold wires and aluminum wires are generally used as thin metal wires for bonding semiconductor elements and external leads. Among these, gold wire has corrosion resistance and poor bonding properties, so gold wire is used more than aluminum wire in Japan.

金線をボンディングする技術としては、熱圧着法が代表
的方法である。熱圧着法は、リード線を機械的に切断す
るか又は、電気トーチで溶断した後、１００℃〜３５０
℃の温度範囲でリード線を加圧してボンディングする方
法である。A typical technique for bonding gold wires is thermocompression bonding. In the thermocompression bonding method, the lead wire is mechanically cut or melted with an electric torch, and then heated at 100°C to 350°C.
This is a method of bonding by applying pressure to the lead wires at a temperature range of ℃.

近年、ボンディング技術の向上とＩＣの組立コストの低
減の目的で、ボンディングマシンの高速度化および自動
化が進み、従来の高純変の金線は引張強度が低いため、
ボンディング作業中に断線を生ずることが多くなってき
た。また、断線に至らないでボンディングをすることが
できたとしても、一度熱の影響を受けた金線が軟化し半
導体素子の電極と外部リードをボンディングする金線の
ループの形状にたるみを生してシフートしたり、さらに
樹１１ａモールドする場合にボンディング用金線が欧化
によって変形してショー）・や断線の原因となることが
ある。また、欧化により引張強度が低下して断、線を生
ずるので、これに１史用される金線は、高い強度を要求
されろようになってきた。In recent years, in order to improve bonding technology and reduce IC assembly costs, bonding machines have become faster and more automated, and conventional high-purity gold wires have low tensile strength.
It has become more common for wire breaks to occur during bonding work. Furthermore, even if bonding can be carried out without breaking the wire, the gold wire once affected by heat will soften and the shape of the loop of gold wire used to bond the electrode of the semiconductor element and the external lead will become sagging. When shifting or further molding the tree 11a, the gold wire for bonding may be deformed due to Europeanization, causing breakage or wire breakage. Furthermore, due to Europeanization, the tensile strength decreases and breaks and lines occur, so the gold wire that has been used for this purpose has come to be required to have high strength.

このような要求に応じろために、Ｃａをｏ、　ｏｏｏｓ
乃至００１重量％含有せしめたボンディジグ用金線（特
開昭５３−１０５９６８）　、Ｂｅを０．０００１乃至
００００８重呈％含０せしめたボンデ【ジグ用金線（特
開昭５３−１１２０５９）、Ｃａを０、０００３乃至０
．００５重址０含有せしめ且っＢｅを０、０００１乃至
ｏ、　ｏｏｏ８重量％、Ｇｃ　＠　０．０００５乃至０
００５重量％０Ｉ種または２Ｍを含有せしめ、総計ｏ、
　０００４乃至００１重量０となるようにしたボンデ（
ジグ用金線（特開昭５３−１１２９６０）、Ｓｅ、Ｔｃ
、Ｚｎ、　ＰｂおよびＭｎのうち１種または２種以上の
元素をＤ計量で０．０００１乃至０．０１重量％含有せ
しめたボンディング強度Ｒ（特開昭５７−９０９５４　
）　、Ｓｒ　＠　０．０００１乃至０．０１重量％含イ
Ｉせしめたボンディング用金線（特開昭５９−６５４３
９　）　、Ｃｅ、　Ｐｒ、　ＮｄおよびＳｍがらなろセ
リ・クム族上類金属のうち１種または２種以上０、００
０３乃至０．０１０重量０を含有しさらに　Ｇｅ。In order to comply with such requests, Ca o, ooos
Gold wire for bonding jigs containing 0.0001 to 001% by weight of Be (JP-A-53-105968), Gold wire for bonding jigs containing 0.0001 to 00008 weight% of Be (JP-A-53-112059), Ca 0,0003 to 0
．． Contains 0.005 heavy weight, Be of 0.0001 to o, ooo of 8% by weight, and Gc of 0.0005 to 0.
005% by weight of 0I species or 2M, total o,
0004 to 001 Bonde made to have a weight of 0 (
Gold wire for jig (JP-A-53-112960), Se, Tc
, Zn, Pb, and Mn in an amount of 0.0001 to 0.01% by weight by D measurement (JP-A-57-90954)
), Sr @ 0.0001 to 0.01% by weight I-containing gold wire for bonding (JP-A-59-6543)
9) , Ce, Pr, Nd and Sm, one or more of the upper metals of the Seri-cum group 0,00
03 to 0.010% by weight and further contains Ge.

ＳｅおよびＣａのうち１種または２種以上０．０００１
乃至ｏ　ｏｏ６ｏ重量％を含有せしめたボンディング用
金線（特開昭５８−１５４２４２）　、Ｂをｏ、　ｏｏ
ｏｉ乃至００１重量０含有せしめたボンデ、（ジグ用金
線等の種々の組成の高純度金（９９，９９重地形程度）
のボンディング用金線が提案された。One or more of Se and Ca 0.0001
Gold wire for bonding containing 6% by weight of o to ooo (Japanese Patent Application Laid-open No. 154242/1983), B is o, oo
Bonde containing oi to 001 weight 0, (high purity gold of various compositions such as gold wire for jigs (99,99 heavy topography grade))
Gold wire for bonding was proposed.

発明が解決しようとする問題点 本発明者等は、これらの従来提案された種々のボンデ（
ジグ用金線について検討した結果、これらのボンディン
グ用金線は、従来の高純度金線に比して高い引張強度を
有し、ボンディング作業中に断線を起こす可能性が低い
ことを確認した。しかし、これらの金線においても未だ
常温および高温引張強度の不足のためにボンディング作
業中に断線を生ずることがあること、および、このよう
な従来提案された高純度金線においては、ループ高さが
高く、半導体素子のボンデ、（ングに際してフラ・ソ１
−パッケージ用デバイスのボンディジグ用金線としては
適当でないことがわかった。Problems to be Solved by the Invention The present inventors have solved the various bonding devices (
As a result of examining gold wires for jigs, it was confirmed that these gold wires for bonding have higher tensile strength than conventional high-purity gold wires and are less likely to break during bonding work. However, even with these gold wires, wire breakage may occur during the bonding process due to insufficient tensile strength at room temperature and high temperature. is high, and when bonding semiconductor devices,
- It was found that it was not suitable as a gold wire for bonding jigs for packaged devices.

そこで、本発明者等は、不断の研究の結果、Ｌａ、ｐｂ
のうち１種または２種０．０００１乃至０．００６を含
有し、さらに、Ｂｅ、　Ｃａのうち１種または２種０、
０Ｏｅ２乃至０００３重量％全台有させ、残部を不ｒｉ
’ｒｍ不純物を含む純度９９９９％以上の人ｕとした組
成とすることによって、上述のＢｅ、　Ｃａを含有した
ボンディング用金線以上の引張強度を有し、反面ループ
高さを顕著に低くできろことを見出して、本発明をする
に至った。Therefore, as a result of continuous research, the present inventors have discovered that La, pb
Contains 0.0001 to 0.006 of one or two of the following, and further contains 0 of one or two of Be, Ca,
All units should have 0Oe2 to 0003% by weight, and the rest should be free.
By making the composition 9999% pure or higher containing rm impurities, it has a tensile strength higher than that of the gold wire for bonding containing Be and Ca described above, and on the other hand, the loop height can be significantly lowered. This discovery led us to create the present invention.

発明の囮贋一 本発明による半導体素子ボンディング用金線は、Ｌａ、
　Ｐｂのうら１種または２種０．０００１乃至０００６
重量％残部有し、Ｂｅ、　Ｃａのうち１種または２種０
．０００２〜０００３重量％を含有し、残部を不可避不
純物を含む純度９９９９％以上の人ｕとした組成を有す
ることを特徴とするものである。Decoy of the Invention The gold wire for semiconductor element bonding according to the present invention has La,
Pb lining 1 or 2 0.0001 to 0006
The balance is 0% by weight, and 0 of 1 or 2 of Be and Ca.
．． It is characterized by having a composition in which it contains 0002 to 0003% by weight, and the remainder has a purity of 9999% or more containing unavoidable impurities.

上記の組成において、Ｌａ、　Ｐｂの含有率は０．００
０１重ｕ％以下では効果が生じない。反面、含有率が大
きい程、常温強度、高温強度ともに高くなるが、０００
６重量％を超えろと、ボールの１Ａ球度が悪くなるので
、０００６重及％以下とし、含有率の範囲は０．０００
１〜０００６重量％と定めた。In the above composition, the content of La and Pb is 0.00
If the amount is less than 0.01% by weight, no effect will be produced. On the other hand, the higher the content, the higher the strength at room temperature and the strength at high temperature.
If it exceeds 6% by weight, the 1A sphericity of the ball will deteriorate, so it should be less than 0006% by weight, and the content range is 0.000%.
It was determined to be 1 to 0006% by weight.

残部ｌｌｅ、　Ｃａ等成分は、Ｌａ、　Ｐｂとの共存に
おいてボンディング強度を高め、常温及び高温引張強度
を一段と高めろとともに、ボンディング時のループプロ
フィルを安定にし、その反面、ループ高さが低くなる。The remaining components such as lle and Ca increase the bonding strength in coexistence with La and Pb, further increasing the tensile strength at room temperature and high temperature, and stabilize the loop profile during bonding, but on the other hand, the loop height becomes low.

その含有量は、０．０００２重世％以下では効果が生じ
ない。反面、０．００３重量０を超えろと、ボンダビリ
ティが悪くなり、ボールの真球度が悪くなるので、含有
率範囲は０．０００２〜０００３重量％と定めた。If the content is less than 0.0002%, no effect will be produced. On the other hand, if the content exceeds 0.003% by weight, bondability and sphericity of the ball deteriorate, so the content range was set at 0.0002 to 0003% by weight.

残部例 ９９、９９９％の高純度金を使用（７、Ｌａ５Ｐｂおよ
びＢｅ、　Ｃａを含有した金インゴ・７１−を作製し、
１１１１線加工を施して、直径φ０．０２５ｍｍのボン
ディング用金線を製造した。Remaining example 99, using 999% high purity gold (7, gold ingo containing La5Pb, Be, Ca 71- was prepared,
1111 wire processing was performed to produce a bonding gold wire with a diameter of 0.025 mm.

伸線後の金線を、常温におけろ破断伸び率を目標値４％
として、熱処理し、従来金線と比較して、常温における
引張強度と呻び率並びに高’ｔＷ　（２５０℃：渇度、
２０秒；保持時間）におけろ引張強度と伸び率、更にボ
ンディング評価テストを実施し、測定した。After wire drawing, the elongation at break of the gold wire at room temperature is set to the target value of 4%.
As a result, the tensile strength and groaning rate at room temperature as well as high 'tW (250℃: thirst,
The tensile strength and elongation rate at 20 seconds (holding time) and a bonding evaluation test were also conducted and measured.

その測定結果を従来のものと比較して表１に示す。なお
、表中、実施量というのは本発明に係る半導体素子用ボ
ンブイノブ金線のことである。The measurement results are shown in Table 1 in comparison with conventional ones. In addition, in the table, the amount used refers to the bomby knob gold wire for semiconductor devices according to the present invention.

上記の結果から、本発明に係るボンディング用金線は、
常温及び高温強度が高（、ループ高さが最も低いので、
半導体素子用ポジディング金線として、フラ・ソトパッ
ケージ用デバイス向は仕様に最適であることがわかる。From the above results, the gold wire for bonding according to the present invention is
High strength at room temperature and high temperature (loop height is the lowest, so
It can be seen that as a positive gold wire for semiconductor elements, it is most suitable for use in devices for Fura-soto packaging.

Claims (1)

【特許請求の範囲】[Claims] Ｌａ、Ｐｂのうち１種または２種０．０００１乃至０．
００６重量％を含有し、Ｂｅ、Ｃａのうち１種または２
種０．０００２〜０．００３重量％を含有し、残部を不
可避不純物を含む純度９９．９９％以上のＡｕとした組
成を有することを特徴とする半導体素子ボンディング用
金線。One or two of La and Pb from 0.0001 to 0.
006% by weight, and one or two of Be and Ca
1. A gold wire for bonding semiconductor devices, characterized in that the gold wire contains 0.0002 to 0.003% by weight of a gold wire, and the remainder is Au with a purity of 99.99% or more containing unavoidable impurities.
JP61070087A 1986-03-28 1986-03-28 Gold wire for semiconductor device bonding Granted JPS62228440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61070087A JPS62228440A (en) 1986-03-28 1986-03-28 Gold wire for semiconductor device bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61070087A JPS62228440A (en) 1986-03-28 1986-03-28 Gold wire for semiconductor device bonding

Publications (2)

Publication Number Publication Date
JPS62228440A true JPS62228440A (en) 1987-10-07
JPS6360105B2 JPS6360105B2 (en) 1988-11-22

Family

ID=13421404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61070087A Granted JPS62228440A (en) 1986-03-28 1986-03-28 Gold wire for semiconductor device bonding

Country Status (1)

Country Link
JP (1) JPS62228440A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6487734A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for gold extra fine wire
JPH01127635A (en) * 1987-11-09 1989-05-19 Mitsubishi Metal Corp Fine au alloy wire for bonding semiconductor device
JPH01146336A (en) * 1987-12-03 1989-06-08 Mitsubishi Metal Corp Au alloy superfine wire for semiconductor element bonding
JPH02170931A (en) * 1988-09-29 1990-07-02 Mitsubishi Metal Corp Fine gold-alloy wire for gold bump
US4938923A (en) * 1989-04-28 1990-07-03 Takeshi Kujiraoka Gold wire for the bonding of a semiconductor device
JPH02205641A (en) * 1989-01-31 1990-08-15 Tatsuta Electric Wire & Cable Co Ltd Gold alloy thin wire for bonding
JPH03257129A (en) * 1990-03-06 1991-11-15 Mitsubishi Materials Corp Gold alloy wire for bonding of semiconductor device
JPH04304335A (en) * 1991-03-30 1992-10-27 Mitsubishi Materials Corp Pure gold foil for noble metal card
JPH05179375A (en) * 1991-12-26 1993-07-20 Nippon Steel Corp Fine gold alloy wire for bonding
SG87207A1 (en) * 2000-06-19 2002-03-19 Tanaka Electronics Ind Gold wire for semiconductor element bonding
WO2006057230A1 (en) * 2004-11-26 2006-06-01 Tanaka Denshi Kogyo K.K. Au BONDING WIRE FOR SEMICONDUCTOR ELEMENT
JP2006190719A (en) * 2004-12-28 2006-07-20 Tanaka Electronics Ind Co Ltd Semiconductor device
EP1811556A1 (en) * 2004-09-30 2007-07-25 Tanaka Denshi Kogyo Kabushiki Kaisha Wire bump material

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0515002U (en) * 1991-08-05 1993-02-26 日本電信電話株式会社 Terminal member for optical fixed attenuator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154242A (en) * 1982-03-10 1983-09-13 Mitsubishi Metal Corp Fine wire of gold alloy for bonding semiconductor element
JPS59119752A (en) * 1982-12-24 1984-07-11 Tanaka Denshi Kogyo Kk Bonding gold wire for semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154242A (en) * 1982-03-10 1983-09-13 Mitsubishi Metal Corp Fine wire of gold alloy for bonding semiconductor element
JPS59119752A (en) * 1982-12-24 1984-07-11 Tanaka Denshi Kogyo Kk Bonding gold wire for semiconductor element

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6487734A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for gold extra fine wire
JPH01127635A (en) * 1987-11-09 1989-05-19 Mitsubishi Metal Corp Fine au alloy wire for bonding semiconductor device
JPH0576181B2 (en) * 1987-12-03 1993-10-22 Mitsubishi Materials Corp
JPH01146336A (en) * 1987-12-03 1989-06-08 Mitsubishi Metal Corp Au alloy superfine wire for semiconductor element bonding
JPH02170931A (en) * 1988-09-29 1990-07-02 Mitsubishi Metal Corp Fine gold-alloy wire for gold bump
JPH02205641A (en) * 1989-01-31 1990-08-15 Tatsuta Electric Wire & Cable Co Ltd Gold alloy thin wire for bonding
US4938923A (en) * 1989-04-28 1990-07-03 Takeshi Kujiraoka Gold wire for the bonding of a semiconductor device
DE3936281A1 (en) * 1989-04-28 1990-10-31 Tanaka Electronics Ind GOLDEN WIRE FOR CONNECTING A SEMICONDUCTOR DEVICE
JPH03257129A (en) * 1990-03-06 1991-11-15 Mitsubishi Materials Corp Gold alloy wire for bonding of semiconductor device
JPH04304335A (en) * 1991-03-30 1992-10-27 Mitsubishi Materials Corp Pure gold foil for noble metal card
JPH05179375A (en) * 1991-12-26 1993-07-20 Nippon Steel Corp Fine gold alloy wire for bonding
SG87207A1 (en) * 2000-06-19 2002-03-19 Tanaka Electronics Ind Gold wire for semiconductor element bonding
EP1811556A1 (en) * 2004-09-30 2007-07-25 Tanaka Denshi Kogyo Kabushiki Kaisha Wire bump material
EP1811556A4 (en) * 2004-09-30 2009-08-05 Tanaka Electronics Ind Wire bump material
WO2006057230A1 (en) * 2004-11-26 2006-06-01 Tanaka Denshi Kogyo K.K. Au BONDING WIRE FOR SEMICONDUCTOR ELEMENT
JP2006190719A (en) * 2004-12-28 2006-07-20 Tanaka Electronics Ind Co Ltd Semiconductor device
JP4713149B2 (en) * 2004-12-28 2011-06-29 田中電子工業株式会社 Semiconductor device

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