JPH1098062A - Gold alloy wire for wedge bonding - Google Patents

Gold alloy wire for wedge bonding

Info

Publication number
JPH1098062A
JPH1098062A JP9206161A JP20616197A JPH1098062A JP H1098062 A JPH1098062 A JP H1098062A JP 9206161 A JP9206161 A JP 9206161A JP 20616197 A JP20616197 A JP 20616197A JP H1098062 A JPH1098062 A JP H1098062A
Authority
JP
Japan
Prior art keywords
bonding
wire
gold alloy
alloy wire
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9206161A
Other languages
Japanese (ja)
Other versions
JP3690902B2 (en
Inventor
Teruo Kikuchi
照夫 菊池
Kokichi Ishii
光吉 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP20616197A priority Critical patent/JP3690902B2/en
Publication of JPH1098062A publication Critical patent/JPH1098062A/en
Application granted granted Critical
Publication of JP3690902B2 publication Critical patent/JP3690902B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

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Abstract

PROBLEM TO BE SOLVED: To obtain joint strength sufficiently large to realize wedge bonding by using a gold alloy wire. SOLUTION: This gold alloy wire contains 1 to 100 wt.ppm of calcium(Ca) and 0.2 to 5.0wt.% of at least one kind of paradium(Pd), silver(Ag) and platinum(Pt), and the remaining part is an essential impurity. Its tensile strength is set to 33.0kg/mm<2> or more, and the elongation thereof is 1 set to 3%. Further, it may be added with at least one kind of 1 to 100 wt.ppm out of Mg, Y, La, Eu, Ge, and Be.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はウエッジボンディン
グ用金合金線に係り、高温接合強度に優れてＩＣチップ
の高密度配線用として好適な金合金線に向けられる。The present invention relates to a gold alloy wire for wedge bonding, and more particularly to a gold alloy wire having excellent high-temperature bonding strength and suitable for high-density wiring of IC chips.

【０００２】[0002]

【従来の技術】ＩＣチップの電極と外部配線を接続する
場合、ワイヤーを介して配線するワイヤーボンディング
方法が知られている。この中でもＩＣチップのＡｌ電極
とワイヤーを接合する方式により、超音波併用熱圧着接
合及び超音波接合が主流を占めている。2. Description of the Related Art When an electrode of an IC chip is connected to an external wiring, a wire bonding method of wiring via a wire is known. Among these, thermocompression bonding using ultrasonic waves and ultrasonic bonding occupy the mainstream due to the method of bonding the Al electrode of the IC chip and the wire.

【０００３】ここで超音波併用熱圧着接合は通常ネール
ヘッドボンディング方法により行われている。ネールヘ
ッドボンディング方法による接合法を図１を用いて説明
する。図１（ａ）に示す様にワイヤー２をキャピラリー
１に挿通しその先端に電気トーチ３を対向させ、ワイヤ
ー２との間で放電させることにより、ワイヤー２の先端
を加熱、溶融してボール４を形成する。Here, thermocompression bonding using ultrasonic waves is usually performed by a nail head bonding method. The bonding method by the nail head bonding method will be described with reference to FIG. As shown in FIG. 1 (a), a wire 2 is inserted into a capillary 1 and an electric torch 3 is opposed to the tip of the capillary 2 to discharge the wire 2 with the wire. To form

【０００４】次いで図１（ｂ）に示すようにキャピラリ
ー１を下降させて該ボール４をＩＣチップ６上のＡｌ電
極５の上に押圧接合する。この時図示しないが超音波振
動がキャピラリー１を通して付加されると共に、ＩＣチ
ップ６はヒーターブロックで加熱されるため上記ボール
４は熱圧着され圧着ボール４′となる。次いで図１
（ｃ）に示すようにキャピラリー１は所定の軌跡を描い
て、外部配線８の上に移動し、下降する。この時図示し
ないが超音波振動がキャピラリー１を通して付加され、
外部配線８はヒーターブロックで加熱されるためワイヤ
ー２側面が熱圧着される。Then, as shown in FIG. 1B, the capillary 1 is lowered, and the ball 4 is pressed and joined onto the Al electrode 5 on the IC chip 6. At this time, although not shown, ultrasonic vibration is applied through the capillary 1 and the IC chip 6 is heated by the heater block, so that the ball 4 is thermocompression-bonded to form a compression ball 4 '. Then Figure 1
As shown in (c), the capillary 1 moves on the external wiring 8 along a predetermined trajectory and descends. At this time, although not shown, an ultrasonic vibration is applied through the capillary 1,
Since the external wiring 8 is heated by the heater block, the side surface of the wire 2 is thermocompression-bonded.

【０００５】次いで図１（ｄ）に示すようにクランパー
７はワイヤー２をクランプしたまま上昇することによ
り、ワイヤー２が切断され配線が完了する。一方超音波
接合は通常振動を接合部へ伝えるのに最適なウエッジボ
ンディング方法により行われている。これはウエッジ状
ツールを用いる方法である。ウエッジボンディング方式
による接合法を図２を用いて説明する。Next, as shown in FIG. 1D, the clamper 7 rises while clamping the wire 2, thereby cutting the wire 2 and completing the wiring. On the other hand, ultrasonic bonding is usually performed by a wedge bonding method which is most suitable for transmitting vibration to a bonded portion. This is a method using a wedge-shaped tool. The joining method by the wedge bonding method will be described with reference to FIG.

【０００６】図２（ａ）に示す様にワイヤー１２をウエ
ッジ１１下端部に挿通し、この下方にＩＣチップ１６上
のＡｌ電極１５を移動する。次いで図２（ｂ）に示すよ
うにウエッジ１１を下降させて常温のまま超音波振動を
付加してワイヤー１２をＡｌ電極１５に接合する。次い
で図２（ｃ）に示すようにクランパー１７が開放され、
ウエッジ１１は所定の軌跡を描いて、外部配線１８の上
に移動し、下降する。この時図示しないが常温のまま超
音波振動がウエッジ１１を通して付加され、ワイヤー１
２を外部配線１８に接合する。As shown in FIG. 2A, the wire 12 is inserted into the lower end of the wedge 11, and the Al electrode 15 on the IC chip 16 is moved below this. Next, as shown in FIG. 2B, the wedge 11 is lowered and ultrasonic vibration is applied at room temperature to join the wire 12 to the Al electrode 15. Next, the clamper 17 is opened as shown in FIG.
The wedge 11 draws a predetermined locus, moves on the external wiring 18, and descends. At this time, although not shown, ultrasonic vibration is applied through the wedge 11 at room temperature, and the wire 1
2 is connected to the external wiring 18.

【０００７】次いで図２（ｄ）に示すようにクランパー
１７はワイヤー２をクランプしたままウエッジ１１が上
昇することにより、ワイヤー１２が切断され配線が完了
する。前記ネールヘッドボンディング方法は生産性に優
れている為好ましい方法であるが、熱を用いる為ワイヤ
ー材料として金合金線を用いて使用され、酸化し易いア
ルミ合金線には不適である。Then, as shown in FIG. 2D, the clamper 17 raises the wedge 11 while clamping the wire 2, thereby cutting the wire 12 and completing the wiring. The nail head bonding method is a preferable method because it is excellent in productivity. However, since it uses heat, a gold alloy wire is used as a wire material and is not suitable for an aluminum alloy wire that is easily oxidized.

【０００８】また図３（ａ）に示す様に圧着ボール径Ｌ
1 がワイヤー外径Ｄの３〜４倍になることが微細な配線
を行う際のネックになるという限界を有している。次の
ウエッジボンディング方法は生産性は低下するものの室
温で処理出来る為ワイヤー材料としてアルミ合金線を用
いて使用されている。また図３（ｂ）に示す様につぶれ
幅Ｌ2 がワイヤー外径Ｄの１．５〜２．５倍に抑制出来
るという特徴を有している。Further, as shown in FIG.
There is a limit in that 1 to 3 to 4 times the wire outer diameter D becomes a bottleneck in fine wiring. The following wedge bonding method is used with an aluminum alloy wire as a wire material because it can be processed at room temperature although productivity is reduced. The width L 2 crushed as shown in FIG. 3 (b) has a feature that can be reduced to 1.5 to 2.5 times the wire outer diameter D.

【０００９】ここで前述のワイヤー材料として金合金線
は他の材料と対比して耐蝕性に優れている為、半導体装
置の耐蝕性に対する信頼性を確保する面で配線材料とし
て最も好ましい材料である。一方最近の半導体装置に対
して高密度配線が要求されている。これの対応として金
合金線とＩＣチップ電極との接合部の配線方向と直角方
向での拡がりを小さくすることが必要である。Here, as the above-mentioned wire material, the gold alloy wire is more excellent in corrosion resistance than other materials, and is therefore the most preferable material as the wiring material in terms of ensuring the reliability with respect to the corrosion resistance of the semiconductor device. . On the other hand, high-density wiring is required for recent semiconductor devices. To cope with this, it is necessary to reduce the spread of the joint between the gold alloy wire and the IC chip electrode in the direction perpendicular to the wiring direction.

【００１０】この為ワイヤー材料として金合金線を用い
てネールヘッドボンディングを行うに当たって、圧着ボ
ールの外径を小さくする事が試みられたがその大きさに
も限度がある。For this reason, in performing nail head bonding using a gold alloy wire as a wire material, attempts have been made to reduce the outer diameter of the pressure-bonded ball, but the size is limited.

【００１１】[0011]

【発明が解決しようとする課題】前述の従来事情に鑑み
従来からネールヘッドボンディング用として提案されて
いる金合金線を用いてＩＣチップ電極にウエッジボンデ
ィングを行ってみたところ、接合部の配線方向と直角方
向での拡がりはネールヘッドボンディング方法と対比し
て小さくすることは出来るものの、ＩＣチップの作動状
態を考えて高温状態に晒した後の接合部での接合強度
（以下高温接合強度という）が小さく半導体装置の信頼
性が低下するという問題が生じてきた。In view of the above-mentioned conventional circumstances, wedge bonding was performed on an IC chip electrode using a gold alloy wire conventionally proposed for nail head bonding. Although the spread in the perpendicular direction can be reduced as compared with the nail head bonding method, the bonding strength at the bonding portion after exposure to a high temperature state (hereinafter referred to as high temperature bonding strength) in consideration of the operating state of the IC chip is low. There has been a problem that the reliability of the semiconductor device is reduced.

【００１２】この為本発明に於いては金合金線を用いて
ＩＣチップ電極にウエッジボンディングを行うことによ
り、配線方向と直角方向での接合部の拡がりを小さくし
て高密度配線に対応するとともに高温接合強度を向上さ
せて半導体装置の信頼性を向上させることの出来る金合
金線を提供する事を目的とする。For this reason, in the present invention, by performing wedge bonding on the IC chip electrode using a gold alloy wire, the spread of the bonding portion in the direction perpendicular to the wiring direction is reduced, thereby enabling high-density wiring. It is an object of the present invention to provide a gold alloy wire capable of improving the high-temperature bonding strength and improving the reliability of a semiconductor device.

【００１３】[0013]

【課題を解決するための手段】本発明者等が鋭意研究を
重ねた結果、高純度金に所定量のＣａ及び所定量のＰ
ｄ，Ａｇ，Ｐｔのうち少なくとも１種を共存し、通常の
ネールヘッドボンディング用金合金線より伸び率を小さ
くし且つ引張り強さを大きくした金合金線とすることに
より、前記組成と材料特性の相乗効果によって前述の目
的を達成し得ることを知見し、本発明を完成するに至っ
た。As a result of intensive studies conducted by the present inventors, a predetermined amount of Ca and a predetermined amount of P
At least one of d, Ag, and Pt coexists and has a lower elongation rate and a higher tensile strength than a normal gold alloy wire for nail head bonding. The inventors have found that the above-mentioned object can be achieved by a synergistic effect, and have completed the present invention.

【００１４】具体的には、本発明により、カルシウム
（Ｃａ）を１〜１００重量ppm 、さらにパラジウム（Ｐ
ｄ）、銀（Ａｇ）、白金（Ｐｔ）のうち少なくとも１種
を０．２〜５．０重量％含有し、残部が金及び不可避不
純物からなる組成を有する金合金線であって該金合金線
の引張強さが３３．０kg／mm2 以上、伸び率が１〜３％
であることを特徴とするウエッジボンディング用金合金
線が提供される。Specifically, according to the present invention, 1 to 100 ppm by weight of calcium (Ca) and palladium (P
d) a gold alloy wire containing at least one of silver (Ag) and platinum (Pt) in an amount of 0.2 to 5.0% by weight, with the balance being gold and unavoidable impurities. The wire has a tensile strength of 33.0 kg / mm 2 or more and an elongation of 1 to 3%.
A gold alloy wire for wedge bonding is provided.

【００１５】さらに好ましくはＭｇ，Ｙ，Ｌａ，Ｅｕ，
Ｇｅ，Ｂｅのうち少なくとも１種を１〜１００重量ppm
添加することができる。More preferably, Mg, Y, La, Eu,
At least one of Ge and Be is 1 to 100 ppm by weight.
Can be added.

【００１６】[0016]

【発明の実施の形態】本発明のウエッジボンディング用
金合金線は高純度金に所定量のＣａとＰｄ，Ａｇ，Ｐｔ
のうち少なくとも１種を含有した組成を有し、伸び率を
小さくし、引張り強さを大きくすることを特徴とする。 （１）組成 原料高純度金としては少なくとも９９．９９重量％
以上、好ましくは９９．９９５重量％以上、最も好まし
くは９９．９９９重量％以上に精製した高純度金が用い
られる。BEST MODE FOR CARRYING OUT THE INVENTION A gold alloy wire for wedge bonding according to the present invention is obtained by adding a predetermined amount of Ca, Pd, Ag, and Pt to high purity gold.
Characterized in that it has a composition containing at least one of the above, and has a low elongation and a high tensile strength. (1) Composition At least 99.99% by weight of raw material high purity gold
As described above, high purity gold purified to preferably 99.995% by weight or more, most preferably 99.999% by weight or more is used.

【００１７】 〔Ｃａ〕 （ａ）この様な高純度金に上記所定量のＣａとＰｄ，Ａ
ｇ，Ｐｔのうち少なくとも１種を共存した組成にすると
ともに所定の伸び率及び引張り強さとすることにより、
その相乗効果によって高温接合強度を向上させる事がで
きる。 （ｂ）Ｃａ含有量が１重量ppm 未満になると１重量ppm
以上と対比して高温接合強度は小さくなる。Ｃａ含有量
が１００重量ppm を超えるとＩＣチップに割れが生じる
為、これを避けるため不十分な接合しか出来なくなり高
温接合強度は小さくなる。[Ca] (a) The above-mentioned predetermined amount of Ca and Pd, A
g, Pt, and a predetermined elongation and tensile strength.
High temperature bonding strength can be improved by the synergistic effect. (B) If the Ca content is less than 1 ppm by weight, 1 ppm by weight
In comparison with the above, the high-temperature bonding strength decreases. If the Ca content exceeds 100 ppm by weight, cracks occur in the IC chip. To avoid this, only insufficient bonding can be performed and the high-temperature bonding strength decreases.

【００１８】この為Ｃａ含有量は伸び率及び引張り強さ
の条件のもとに１〜１００重量ppmと定めた。好ましく
は１〜５０重量ppm である。 （ｃ）この効果は上記所定量のＣａとＰｄ，Ａｇ，Ｐｔ
のうち少なくとも１種の共存に加えて、Ｍｇ，Ｙ，Ｌ
ａ，Ｅｕ，Ｇｅ，Ｂｅのうち少なくとも１種の成分を１
〜１００重量ppm の範囲内で添加しても所定の伸び率及
び引張り強さを有する金合金線であれば所定量のＣａ及
びＰｄ，Ａｇ，Ｐｔのうち少なくとも１種を共存した効
果が維持され高温接合強度を向上させる事ができる。For this reason, the Ca content is set to 1 to 100 ppm by weight under the conditions of elongation and tensile strength. Preferably it is 1 to 50 ppm by weight. (C) This effect is due to the above-mentioned predetermined amounts of Ca and Pd, Ag, Pt.
And at least one of Mg, Y, L
a, Eu, Ge, Be at least one component
Even if it is added in the range of 100 to 100 ppm by weight, the effect of coexisting at least one of Ca and Pd, Ag, and Pt is maintained as long as it is a gold alloy wire having a predetermined elongation and tensile strength. High temperature bonding strength can be improved.

【００１９】（ｄ）この場合Ｐｄ，Ａｇ，Ｐｔのうち少
なくとも１種を所定量添加し、所定量のＣａを添加しな
い場合、所定の伸び率及び引張り強さを有しても高温接
合強度は小さくなる。 〔Ｐｄ，Ａｇ，Ｐｔ〕 （ａ）前記高純度金に上記所定量のＣａとＰｄ，Ａｇ，
Ｐｔのうち少なくとも１種を共存して所定量の金純度を
有する組成にするとともに所定の伸び率及び引張り強さ
とすることにより、その相乗効果によって高温接合強度
を向上させる事ができる。(D) In this case, when at least one of Pd, Ag, and Pt is added in a predetermined amount, and a predetermined amount of Ca is not added, the high-temperature bonding strength is high even if it has a predetermined elongation and tensile strength. Become smaller. [Pd, Ag, Pt] (a) The above-mentioned predetermined amounts of Ca and Pd, Ag,
By making at least one of Pt coexist with a composition having a predetermined amount of gold purity and a predetermined elongation and tensile strength, the synergistic effect can improve the high-temperature bonding strength.

【００２０】（ｂ）Ｐｄ，Ａｇ，Ｐｔのうち少なくとも
１種が０．２重量％未満になると０．２重量％以上と対
比して高温接合強度は小さくなる。５．０重量ppm を超
えるとＩＣチップに割れが生じる為、これを避けるため
不十分な接合しか出来なくなり高温接合強度は小さくな
る。この為Ｐｄ，Ａｇ，Ｐｔのうち少なくとも１種の含
有量は所定の伸び率及び引張り強さの条件のもとに０．
２〜５．０重量％と定めた。本発明の金合金線は、出発
高純度金にやはり高純度の添加元素を添加することによ
り、得られる金合金線の不純物量を制御することができ
る。添加元素も９９．９９重量％以上、さらには９９．
９９５重量％以上、９９．９９９重量％以上にすること
ができるので、得られる金合金線の不純物を１００重量
ppm 以下、さらには２０重量ppm 以下にすることができ
る。 （２）伸び率 上記所定量のＣａとＰｄ，Ａｇ，Ｐｔのうち少なく
とも１種を含有し残部が金及び不可避不純物からなる組
成にし、所定の引張り強さにするとともに伸び率を１〜
３％とすることにより、その相乗効果によって高温接合
強度を向上させる事ができる。本発明に於いて伸び率
は、室温で、金合金線を標点距離を１００mmとして引張
速度１０mm／分で引張試験機で引っ張り、破断した時の
伸び量を測定して次式の値を伸び率とする。(B) When at least one of Pd, Ag, and Pt is less than 0.2% by weight, the high-temperature bonding strength is lower than 0.2% by weight or more. If the content exceeds 5.0 ppm by weight, cracks occur in the IC chip. To avoid this, only insufficient bonding can be performed and the high-temperature bonding strength decreases. For this reason, the content of at least one of Pd, Ag, and Pt is set to 0.1 at a given elongation and tensile strength.
It was determined to be 2 to 5.0% by weight. In the gold alloy wire of the present invention, the impurity content of the obtained gold alloy wire can be controlled by adding a high-purity additive element to the starting high-purity gold. The added element is also 99.99% by weight or more, and more preferably 99.99% by weight.
995% by weight or more and 99.999% by weight or more.
ppm or less, even 20 ppm by weight or less. (2) Elongation The composition contains at least one of the above-mentioned predetermined amounts of Ca, Pd, Ag, and Pt, and the balance is made of gold and unavoidable impurities.
By setting the content to 3%, the high-temperature bonding strength can be improved by the synergistic effect. In the present invention, the elongation percentage is determined by elongating the gold alloy wire at room temperature with a gauge length of 100 mm at a tensile speed of 10 mm / min using a tensile tester, measuring the amount of elongation at break, and calculating the value of the following formula. Rate.

【数１】 ここで破断した時の伸び量はチャート紙の図形から測定
することが好ましい。(Equation 1) Here, it is preferable to measure the amount of elongation at the time of breaking from the figure on the chart paper.

【００２１】 伸び率が３％を超えると高温接合強度
は小さくなる。この為伸び率は１〜３％と定めた。好ま
しくは２〜３％である。 （３）引張り強さ 上記所定量のＣａとＰｄ，Ａｇ，Ｐｔのうち少なく
とも１種を含有し残部が金及び不可避不純物からなる組
成にし、所定の伸び率にするとともに引張り強さを３
３．０kg／mm2 以上とすることにより、その相乗効果に
よって高温接合強度を向上させる事ができる。When the elongation exceeds 3%, the high-temperature bonding strength decreases. For this reason, the elongation was determined to be 1 to 3%. Preferably it is 2-3%. (3) Tensile strength A composition containing at least one of the above-mentioned predetermined amounts of Ca, Pd, Ag, and Pt, with the balance being gold and unavoidable impurities, having a predetermined elongation and a tensile strength of 3
By setting it to 3.0 kg / mm 2 or more, the high-temperature bonding strength can be improved by the synergistic effect.

【００２２】 引張り強さが３３．０kg／mm2 未満に
なると３３．０kg／mm2 以上と対比して、高温接合強度
は小さくなる。この為引張り強さは３３．０kg／mm2 以
上と定めた。好ましくは３３．０〜７０．０kg／mm2 で
あり、さらに好ましくは３３．０〜６３．０kg／mm2 で
ある。 （４）金合金線の製造方法 本発明になる金合金線の好ましい製造方法を説明する。The tensile strength in contrast to the less than 33.0kg / mm 2 33.0kg / mm 2 or more, the high temperature bond strength is reduced. Therefore, the tensile strength was determined to be 33.0 kg / mm 2 or more. It is preferably 33.0 to 70.0 kg / mm 2 , and more preferably 33.0 to 63.0 kg / mm 2 . (4) Manufacturing method of gold alloy wire A preferable manufacturing method of the gold alloy wire according to the present invention will be described.

【００２３】高純度金に所定量の元素を添加し真空溶解
炉で溶解した後インゴットに鋳造する。該当インゴット
に溝ロール、伸線機を用いた冷間加工と中間アニールを
施し、最終冷間加工により直径１０〜１００μｍの細線
とした後最終アニールを施すものである。ここで本発明
になる合金組成の場合、最終アニールの温度が上昇する
につれて伸び率は１〜３％を維持したまま、引張り強さ
が徐々に低下する温度領域がある。また同一組成であっ
ても最終冷間加工率の大きさによって引張り強さは変わ
ってくる。この為最終冷間加工率と最終アニール温度を
制御して伸び率と引張り強さを調整する。このようにし
て伸び率は１〜３％を維持し、引張り強さが３３．０kg
／mm2 以上、好ましくは３３．０〜７０．０kg／mm2 と
なる温度領域でアニールする事が必要である。更にアニ
ール温度が上昇すると伸び率が４％以上となり引張り強
さは更に低下してくる。従来から使用されているネール
ヘッドボンディング用の金合金線は伸び率が４％以上の
ものが使用されているが本発明になる金合金線では所定
の引張り強さと１〜３％伸び率を与えるために、合金組
成に対応した最終冷間加工率を調整し更に低い温度領域
でアニールする。 （５）用途 本発明になるウエッジボンディング用金合金線はＩＣチ
ップをリードに接続する方法及びＩＣチップを直接基板
に接続するリードレスで接続する方法の何れに用いても
好適である。なお、ここでいうウエッジボンディングと
は、ＩＣチップの電極、例えばＡｌ電極と外部リードや
他の電極をワイヤーで配線する際、ワイヤーと電極部の
接合がファーストボンド、セカンドボンド共にボールを
形成することなく、ウエッジ状ツールを用いてワイヤー
側面を圧着して接合するボンディングであり、必要に応
じてウエッジ状ツールを介して超音波を印加したり電極
部を加熱する。A predetermined amount of element is added to high purity gold, melted in a vacuum melting furnace, and then cast into an ingot. The ingot is subjected to cold working and intermediate annealing using a groove roll and a wire drawing machine to form a thin wire having a diameter of 10 to 100 μm by final cold working and then to final annealing. Here, in the case of the alloy composition according to the present invention, there is a temperature region where the tensile strength gradually decreases while the elongation is maintained at 1 to 3% as the temperature of the final annealing increases. Further, even with the same composition, the tensile strength changes depending on the magnitude of the final cold working ratio. Therefore, the final cold working ratio and the final annealing temperature are controlled to adjust the elongation and the tensile strength. Thus, the elongation is maintained at 1 to 3%, and the tensile strength is 33.0 kg.
/ Mm 2 or more, preferably in a temperature range of 33.0 to 70.0 kg / mm 2 . When the annealing temperature is further increased, the elongation becomes 4% or more, and the tensile strength further decreases. A conventionally used gold alloy wire for nail head bonding has an elongation of 4% or more, but the gold alloy wire according to the present invention provides a predetermined tensile strength and 1-3% elongation. For this purpose, the final cold working ratio corresponding to the alloy composition is adjusted, and annealing is performed in a lower temperature range. (5) Applications The gold alloy wire for wedge bonding according to the present invention is suitable for use in any of a method of connecting an IC chip to a lead and a method of connecting an IC chip directly to a substrate in a leadless manner. In addition, wedge bonding here means that when wiring the electrodes of an IC chip, for example, an Al electrode and an external lead or another electrode with a wire, the bonding between the wire and the electrode portion forms a ball with both a first bond and a second bond. Instead, the bonding is performed by pressing and bonding the side surfaces of the wire using a wedge-shaped tool, and if necessary, applying ultrasonic waves or heating the electrode portion via the wedge-shaped tool.

【００２４】[0024]

【作用】本発明になる金合金線がウエッジボンディング
を行った後高温接合強度に優れている理由は明らかでは
ないが、有効元素としてのＣａが添加されていること、
有害元素がその含有量を規制されていること、又伸び率
が小さく、引張り強さが大きいことがウエッジボンディ
ングによる超音波接合を行う際、材料の不必要な変形を
阻止することと相まって生成されるＡｕ−Ａｌ金属間化
合物が熱的に安定なものが得られているためではないか
と考えられる。Although it is not clear why the gold alloy wire according to the present invention has excellent high-temperature bonding strength after wedge bonding, it is confirmed that Ca as an effective element is added.
The fact that the content of harmful elements is regulated, and the low elongation and high tensile strength are generated in conjunction with the prevention of unnecessary deformation of the material when performing ultrasonic bonding by wedge bonding. This is probably because the Au-Al intermetallic compound obtained is thermally stable.

【００２５】[0025]

【実施例】表１〜３に示す実施例及び比較例について説
明する。 （実施例１）純度９９．９９９重量％の高純度金に所定
量のＣａ及びＰｄを添加し真空溶解炉で溶解した後鋳造
して表１に示す組成の金合金、即ち１重量ppm Ｃａ、
１．０重量％Ｐｄ、残部が金及び不可避不純物からなる
組成の金インゴットを得、これに溝ロール、伸線機を用
いた冷間加工と中間アニールを施し、最終線径２５μｍ
とし、最終アニールにより引張り強さが３９．８kg／mm
2 、伸び率２〜３％になるように仕上げた。EXAMPLES Examples and comparative examples shown in Tables 1 to 3 will be described. (Example 1) A predetermined amount of Ca and Pd were added to high-purity gold having a purity of 99.999% by weight, melted in a vacuum melting furnace, and then cast to form a gold alloy having the composition shown in Table 1, that is, 1 ppm by weight Ca,
A gold ingot having a composition of 1.0% by weight Pd and the balance consisting of gold and unavoidable impurities was obtained, and subjected to cold working and intermediate annealing using a groove roll and a wire drawing machine, and a final wire diameter of 25 μm.
And the final annealing has a tensile strength of 39.8 kg / mm
2. Finished to have an elongation of 2-3%.

【００２６】この金合金線をウエッジボンディング装置
（新川株式会社製 ＳＷＢ−ＦＡ−ＵＳ３０）を用いて
前述の図２に示す方法でＩＣチップのＡｌ電極上及び外
部配線上に超音波ボンディングを行った。この時ＩＣチ
ップ側のボンディングはボンディング荷重を４５ｇ、ボ
ンディング時間を３０ms、ボンディングパワーを０．６
４ｗの条件で行った。The gold alloy wire was subjected to ultrasonic bonding using a wedge bonding apparatus (SWB-FA-US30 manufactured by Shinkawa Corporation) on the Al electrode of the IC chip and the external wiring by the method shown in FIG. . At this time, the bonding on the IC chip side was performed with a bonding load of 45 g, a bonding time of 30 ms, and a bonding power of 0.6.
The test was performed under the condition of 4w.

【００２７】次に試料１０個を２００℃に設定した高温
炉で１００時間保持した。次いで試料を炉から取り出
し、外部配線側でワイヤーを切断し次の方法でＩＣチッ
プ側の高温接合強度を測定した。即ちＩＣチップ側を治
具で固定し、ワイヤーを上方に引っ張り破断荷重を測定
した。１０個の平均値を測定値とし、測定結果を表１に
示す。 （実施例２〜５０、比較例１〜２６）金及び金合金線の
組成、伸び率及び引張り強さを表１に示すようにしたこ
と以外は実施例１と同様にして細線に仕上げ、超音波ボ
ンディングを行った後高温接合強度を測定した。Next, ten samples were kept in a high-temperature furnace set at 200 ° C. for 100 hours. Next, the sample was taken out of the furnace, the wire was cut on the external wiring side, and the high-temperature bonding strength on the IC chip side was measured by the following method. That is, the IC chip side was fixed with a jig, the wire was pulled upward, and the breaking load was measured. The average value of the ten measurements was taken as the measured value, and the measurement results are shown in Table 1. (Examples 2 to 50, Comparative Examples 1 to 26) Except that the composition, elongation, and tensile strength of the gold and gold alloy wires were as shown in Table 1, a fine wire was finished in the same manner as in Example 1; After performing sonic bonding, the high-temperature bonding strength was measured.

【００２８】測定結果を表１〜５に示す。 （試験結果） （１）高純度金に１〜１００重量ppm のＣａ及び０．２
〜５．０重量％のＰｄ，Ａｇ，Ｐｔのうち少なくとも１
種を添加した組成であって、伸び率２〜３％、引張強さ
３９．１〜４１．５kg／mm2 である実施例１〜２３は高
温接合強度が３．５〜５．１ｇと優れた効果を示した。Tables 1 to 5 show the measurement results. (Test results) (1) 1 to 100 ppm by weight of Ca and 0.2 wt.
At least one of Pd, Ag, and Pt of about 5.0% by weight.
Examples 1 to 23 having a seed-added composition having an elongation of 2 to 3% and a tensile strength of 39.1 to 41.5 kg / mm 2 have an excellent high-temperature bonding strength of 3.5 to 5.1 g. Showed the effect.

【００２９】この中でもＣａ添加量が１〜５０重量ppm
のとき高温接合強度が４．１〜５．１ｇである為好まし
く用いられる。 （２）前記組成にＭｇ，Ｙ，Ｌａ，Ｅｕ，Ｇｅ，Ｂｅの
うち少なくとも１種を所定量添加して、伸び率１〜３％
（２〜３％）、引張強さ３９．２〜４１．５kg／mm2 で
ある実施例２４〜４２は高温接合強度が４．３〜５．１
ｇであり、同様に優れた効果を示していることが判る。Among them, the amount of Ca added is 1 to 50 ppm by weight.
In this case, the high-temperature bonding strength is 4.1 to 5.1 g, so that it is preferably used. (2) A predetermined amount of at least one of Mg, Y, La, Eu, Ge, and Be is added to the composition, and the elongation is 1 to 3%.
(2-3%) and Examples 24-42 having a tensile strength of 39.2-41.5 kg / mm 2 had a high-temperature bonding strength of 4.3-5.1.
g, indicating that the same excellent effect was exhibited.

【００３０】（３）実施例３，９，１５，２５に示す組
成及び伸び率を有し、引張強さが３３．０〜６０．６kg
／mm2 である実施例４３〜５１は高温接合強度が３．８
〜４．４ｇであり優れた効果を示した。 （４）本発明に係わるＣａ及びＰｄ，Ａｇ，Ｐｔのいず
れも含有しない比較例１は高温接合強度が０．６ｇと悪
い事が判る。(3) The compositions and elongation percentages shown in Examples 3, 9, 15, and 25 were obtained, and the tensile strength was 33.0 to 60.6 kg.
/ Mm 2 , the high-temperature bonding strength of Examples 43 to 51 was 3.8.
４4.4 g, showing an excellent effect. (4) It can be seen that Comparative Example 1 containing neither Ca nor Pd, Ag, or Pt according to the present invention has a poor high-temperature bonding strength of 0.6 g.

【００３１】（５）本発明の必須成分であるＣａを含有
せず、Ｐｄ，Ａｇ，Ｐｔのうち少なくとも１種を含有す
る比較例２〜５は高温接合強度が２．５〜２．８ｇと悪
い事が判る。 （６）５０重量ppm のＣａを含有するものの、Ｐｄ，Ａ
ｇ，Ｐｔのうち少なくとも１種にかえて２．０重量％の
Ｃｕを含有し所定の伸び率及び引張強さを有する比較例
６は高温接合強度が０．５ｇと悪い事が判る。(5) Comparative Examples 2 to 5, which do not contain Ca which is an essential component of the present invention and contain at least one of Pd, Ag and Pt, have a high-temperature bonding strength of 2.5 to 2.8 g. I understand bad things. (6) Although Pd, A contains 50 ppm by weight of Ca,
Comparative Example 6, which contains 2.0% by weight of Cu instead of at least one of g and Pt and has a predetermined elongation and tensile strength, has a poor high-temperature bonding strength of 0.5 g.

【００３２】（７）所定量のＰｄ，Ａｇ，Ｐｔのうち少
なくとも１種を含有するものの、Ｃａの含有量が２００
重量ppm である比較例７〜１０は高温接合強度が１．０
〜１．４ｇと悪い事が判る。 （８）所定量のＣａを含有するものの、Ｐｄ，Ａｇ，Ｐ
ｔのうち少なくとも１種の含有量が０．１１重量％であ
る比較例１１〜１４は高温接合強度が３．２〜３．３ｇ
と悪い事が判る。(7) At least one of Pd, Ag, and Pt in a predetermined amount is contained, but the Ca content is 200
Comparative Examples 7 to 10 in which ppm by weight had a high-temperature bonding strength of 1.0
It turns out that it is bad with ~ 1.4g. (8) Although containing a predetermined amount of Ca, Pd, Ag, P
In Comparative Examples 11 to 14, in which the content of at least one of t is 0.11% by weight, the high-temperature bonding strength is 3.2 to 3.3 g.
It turns out bad things.

【００３３】（９）所定量のＣａを含有するものの、Ｐ
ｄ，Ａｇ，Ｐｔのうち少なくとも１種の含有量が６．０
重量％である比較例１５〜１８は高温接合強度が１．２
〜１．６ｇと悪い事が判る。 （１０）所定量のＣａ及びＰｄ，Ａｇ，Ｐｔのうち少な
くとも１種を含有し、所定の伸び率を有するものの引張
り強さが３３．０kg／mm2 未満である比較例１９〜２２
は高温接合強度が２．６〜２．９ｇと悪い事が判る。(9) Although containing a predetermined amount of Ca, P
The content of at least one of d, Ag, and Pt is 6.0.
In Comparative Examples 15 to 18, which are weight%, the high-temperature bonding strength was 1.2.
It turns out that it is bad with ~ 1.6g. (10) Comparative Examples 19 to 22 containing a predetermined amount of Ca and at least one of Pd, Ag, and Pt and having a predetermined elongation, but having a tensile strength of less than 33.0 kg / mm 2.
It can be seen that the high-temperature bonding strength is as poor as 2.6 to 2.9 g.

【００３４】（１１）所定量のＣａ及びＰｄ，Ａｇ，Ｐ
ｔのうち少なくとも１種を含有し、所定の引張り強さを
有するものの伸び率が２〜３％を超える比較例２３〜２
６は高温接合強度が２．０〜２．４ｇと悪い事が判る。(11) Predetermined amounts of Ca and Pd, Ag, P
Comparative Examples 23 to 2 containing at least one of t and having a predetermined tensile strength and an elongation of more than 2 to 3%.
6, it can be seen that the high-temperature bonding strength is as poor as 2.0 to 2.4 g.

【００３５】[0035]

【表１】 [Table 1]

【００３６】[0036]

【表２】 [Table 2]

【００３７】[0037]

【表３】 [Table 3]

【００３８】[0038]

【表４】 [Table 4]

【００３９】[0039]

【表５】 [Table 5]

【００４０】[0040]

【発明の効果】本発明により所定量のＣａ及びＰｄ，Ａ
ｇ，Ｐｔのうち少なくとも１種を含有し残部が金及び不
可避不純物からなる組成を有し且つ所定の伸び率と引張
り強さを有するウエッジボンディング用金合金線によれ
ば高温接合強度を向上させることが出来半導体装置の信
頼性向上に効果的である。前記含有成分に加えて所定量
のＭｇ，Ｙ，Ｌａ，Ｅｕ，Ｇｅ，Ｂｅのうち少なくとも
１種を含有した場合においても同様の効果を示すもので
ある。According to the present invention, a predetermined amount of Ca and Pd, A
According to a wedge bonding gold alloy wire having at least one of g and Pt, the balance being gold and unavoidable impurities, and having a predetermined elongation and tensile strength, the high-temperature bonding strength is improved. This is effective in improving the reliability of the semiconductor device. The same effect is obtained when at least one of Mg, Y, La, Eu, Ge, and Be is contained in addition to the above-mentioned components.

【図面の簡単な説明】[Brief description of the drawings]

【図１】ネールボンディング方法による接合法の説明。FIG. 1 illustrates a bonding method using a nail bonding method.

【図２】ウエッジボンディング方法による接合法の説
明。FIG. 2 is an illustration of a bonding method using a wedge bonding method.

【図３】ネールボンディング方法とウエッジボンディン
グ方法による接合部の形状、寸法を示す。FIG. 3 shows the shape and dimensions of a joint part by a nail bonding method and a wedge bonding method.

【符号の説明】[Explanation of symbols]

１１…ウエッジ １２…ワイヤー １２′…ボンディングワイヤー １４′…ワイヤー接合部 １５…Ａｌ配線 １６…ＩＣチップ １７…クランパー １８…外部配線 Ｄ…ワイヤ径 Ｌ1 …圧着ボール径 Ｌ2 …つぶれ幅11 ... wedge 12 ... Wire 12 '... bonding wire 14' ... wire junction 15 ... Al wiring 16 ... IC chip 17 ... clamper 18 ... external wiring D ... wire diameter L 1 ... compression ball diameter L 2 ... droop width

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 カルシウム（Ｃａ）を１〜１００重量pp
m 、さらにパラジウム（Ｐｄ）、銀（Ａｇ）、白金（Ｐ
ｔ）のうち少なくとも１種を０．２〜５．０重量％含有
し、残部が金及び不可避不純物からなる組成を有する金
合金線であって該金合金線の引張強さが３３．０kg／mm
2 以上、伸び率が１〜３％であることを特徴とするウエ
ッジボンディング用金合金線。1. Calcium (Ca) is added in an amount of 1 to 100 weight parts by weight.
m, palladium (Pd), silver (Ag), platinum (P
t) is a gold alloy wire having a composition of at least one of 0.2 to 5.0% by weight and the balance of gold and unavoidable impurities, wherein the gold alloy wire has a tensile strength of 33.0 kg / mm
A gold alloy wire for wedge bonding, having an elongation of 2 to 2 or more and 1 to 3%. 【請求項２】 さらにＭｇ，Ｙ，Ｌａ，Ｅｕ，Ｇｅ，Ｂ
ｅのうち少なくとも１種を１〜１００重量ppm 添加した
ことを特徴とする請求項１記載のウエッジボンディング
用金合金線。2. Mg, Y, La, Eu, Ge, B
The gold alloy wire for wedge bonding according to claim 1, wherein at least one of e is added in an amount of 1 to 100 ppm by weight.
JP20616197A 1996-07-31 1997-07-31 Gold alloy wire for wedge bonding Expired - Fee Related JP3690902B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20616197A JP3690902B2 (en) 1996-07-31 1997-07-31 Gold alloy wire for wedge bonding

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-202413 1996-07-31
JP20241396 1996-07-31
JP20616197A JP3690902B2 (en) 1996-07-31 1997-07-31 Gold alloy wire for wedge bonding

Publications (2)

Publication Number Publication Date
JPH1098062A true JPH1098062A (en) 1998-04-14
JP3690902B2 JP3690902B2 (en) 2005-08-31

Family

ID=26513361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20616197A Expired - Fee Related JP3690902B2 (en) 1996-07-31 1997-07-31 Gold alloy wire for wedge bonding

Country Status (1)

Country Link
JP (1) JP3690902B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006035803A1 (en) * 2004-09-30 2006-04-06 Tanaka Denshi Kogyo K.K. Au ALLOY BONDING WIRE
JP2006203164A (en) * 2004-12-21 2006-08-03 Mitsubishi Materials Corp Metal alloy wire for bonding wire having excellent bonding properties, linearity, and resin flow resistance properties
WO2009060698A1 (en) * 2007-11-06 2009-05-14 Tanaka Denshi Kogyo K. K. Gold alloy wire for ball bonding
JP2011142163A (en) * 2010-01-06 2011-07-21 Tanaka Electronics Ind Co Ltd GOLD (Au) ALLOY BONDING WIRE
JP2012099802A (en) * 2010-10-08 2012-05-24 Tatsuta Electric Wire & Cable Co Ltd Wire for ball bonding
WO2012117512A1 (en) * 2011-03-01 2012-09-07 田中電子工業株式会社 BONDING WIRE OF GOLD (Au) ALLOY

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006035803A1 (en) * 2004-09-30 2006-04-06 Tanaka Denshi Kogyo K.K. Au ALLOY BONDING WIRE
EP1811555A1 (en) * 2004-09-30 2007-07-25 Tanaka Denshi Kogyo Kabushiki Kaisha Au ALLOY BONDING WIRE
EP1811555A4 (en) * 2004-09-30 2012-06-20 Tanaka Electronics Ind Au ALLOY BONDING WIRE
JP2006203164A (en) * 2004-12-21 2006-08-03 Mitsubishi Materials Corp Metal alloy wire for bonding wire having excellent bonding properties, linearity, and resin flow resistance properties
JP4641248B2 (en) * 2004-12-21 2011-03-02 田中電子工業株式会社 Gold alloy wire for bonding wires with excellent bondability, straightness and resin flow resistance
WO2009060698A1 (en) * 2007-11-06 2009-05-14 Tanaka Denshi Kogyo K. K. Gold alloy wire for ball bonding
JP2011142163A (en) * 2010-01-06 2011-07-21 Tanaka Electronics Ind Co Ltd GOLD (Au) ALLOY BONDING WIRE
JP2012099802A (en) * 2010-10-08 2012-05-24 Tatsuta Electric Wire & Cable Co Ltd Wire for ball bonding
WO2012117512A1 (en) * 2011-03-01 2012-09-07 田中電子工業株式会社 BONDING WIRE OF GOLD (Au) ALLOY

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