JPS60162741A - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JPS60162741A
JPS60162741A JP59016835A JP1683584A JPS60162741A JP S60162741 A JPS60162741 A JP S60162741A JP 59016835 A JP59016835 A JP 59016835A JP 1683584 A JP1683584 A JP 1683584A JP S60162741 A JPS60162741 A JP S60162741A
Authority
JP
Japan
Prior art keywords
wire
bonding wire
strength
bonding
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59016835A
Other languages
Japanese (ja)
Inventor
Akio Miyoshi
三好　明男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP59016835A priority Critical patent/JPS60162741A/en
Publication of JPS60162741A publication Critical patent/JPS60162741A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To develop a bonding wire which has high breaking strength and is less decreased in strength by recrystallization by adding and incorporating a specific small amt. of at least one kind of Al, Si, Ge, Sn and Sb into Ag having high purity. CONSTITUTION:Ag having purity as high as >=99.99% is melted in an crucible in an inert gaseous atmosphere in the stage of producing a bonding wire as an electrical connecting wire for a semiconductor element and an external lead. At least one kind of Al, Si, Ge, Sn and Sb is added at 0.005-0.1wt% ratio thereto and is alloyed therewith. After such Ag alloy is cast, the alloy is rolled to a wire shape by forging or caliber rolls, etc. The wire is further drawn by dies having successively smaller bores by which the bonding wire is produced. The bonding wire whic withstands the use of a high-speed automatic bonder and has excellent hot strength is obtd.

Description

【発明の詳細な説明】 続に用いられるボンデイングワイヤーに関する。[Detailed description of the invention] The present invention relates to a bonding wire used in subsequent steps.

半導体装置の組立において、半導体素子と外部リードを
金属線でボンデイングする方式が一般的である。このよ
うな金属線として従来、金線及びアルミニウム線が用い
られ、曲者は熱圧着によるネールへラドボンディング方
式に、後者は超音波振動によるボンディング方式に適用
されている。2. Description of the Related Art In assembling semiconductor devices, it is common to bond semiconductor elements and external leads using metal wires. Conventionally, gold wire and aluminum wire have been used as such metal wires, and the curved wire is applied to the nail-to-nail rad bonding method using thermocompression bonding, and the latter is applied to the bonding method using ultrasonic vibration.

両方式のボンディング速度を比較すると前者の方がはる
かに高速であり、従って組立コストの低下が図れるので
、金線を用いたネールへッドボンンイング方式が一般的
になっている。このようにボンディングの高速化により
ボンディング自体のコストが低下してみると、組立コス
トに占める金線コストの割合が相対的に上昇し、金線に
代る安価な材料がめられるようになってきた。Comparing the bonding speeds of both methods, the former is much faster and can therefore reduce assembly costs, so the nail head bonding method using gold wire has become common. As the cost of bonding itself has decreased due to faster bonding, the proportion of gold wire costs in assembly costs has increased, and cheaper materials have become sought after instead of gold wire. .

ところで上記のようなネールへラドボンディング方式に
適合する金ａＳは、ボンディング工程において金属線の
先端を電気的に又は水素炎により溶融してボールを形成
した際、ボール表面に酸化膜が生成しないこと、ボール
形状が安定して球状になること、が必要である。アルミ
ニウム線は不活性雰囲気中でならばこのような条件を満
足し得るが、コスト的に不利を免れない。他の金属材料
で可能性のあるのは鎖線である。銀線は大気中でボール
を形成しても酸化物の分解圧が高いために酸化膜を生成
せず、ボール形状も安定している。By the way, gold aS, which is suitable for the Neel to Rad bonding method as described above, does not form an oxide film on the ball surface when the tip of the metal wire is melted electrically or with a hydrogen flame to form a ball in the bonding process. It is necessary that the ball shape be stable and spherical. Aluminum wire can satisfy these conditions in an inert atmosphere, but it is disadvantageous in terms of cost. Possibilities for other metal materials are indicated by the dashed line. Even if a silver wire is formed into a ball in the atmosphere, the decomposition pressure of the oxide is high, so no oxide film is formed, and the ball shape is stable.

しかしながら純銀線は破断強度が充分でなく、高速自動
ボンダーで使用すると断線し易い欠点がある。又、この
ような金属線は伸線加工によって製造するのが一般的で
あるが、高純度銀で製造した純銀線は伸線直後は加工硬
化されていて破断強度が高いものの、時間の経過と共に
再結晶化により徐々に軟化し、強度が低下する欠点もあ
る。However, pure silver wire does not have sufficient breaking strength and has the drawback of being easily broken when used in a high-speed automatic bonder. In addition, such metal wires are generally manufactured by wire drawing, but pure silver wire manufactured from high-purity silver is work hardened and has high breaking strength immediately after wire drawing, but it deteriorates over time. It also has the disadvantage that it gradually softens due to recrystallization and its strength decreases.

本発明の目的は、上記純銀線の欠点を解消し高速自動ボ
ンダーでの使用に耐える破断強度を有し、再結晶による
強度低下の小さいボンディングワイヤーを提供すること
にある。この目的を達成するため本発明のボンディング
ワイヤーは純度９９．９９重量％以上の高純度銀に、ア
ルミニウム、珪素、ゲルマニウム、錫及びアンチモンか
らなる群から選ばれた少なくとも一種の元素を０．００
５〜０．１重量％含有せしめた銀合金線とした点に特徴
がある。An object of the present invention is to provide a bonding wire that eliminates the drawbacks of the pure silver wire, has a breaking strength that can withstand use in a high-speed automatic bonder, and has a small decrease in strength due to recrystallization. In order to achieve this object, the bonding wire of the present invention contains high-purity silver with a purity of 99.99% by weight or more and at least one element selected from the group consisting of aluminum, silicon, germanium, tin, and antimony in an amount of 0.00%.
It is characterized by a silver alloy wire containing 5 to 0.1% by weight.

本発明において、ボンディングワイヤーの主成分となる
銀として９９．９９重量％以上の純度のものを用いる理
由は種々の不可避不純物の含有によるボール形成性、強
度等の特性値のバラツキを小さくするためである。In the present invention, the reason why silver with a purity of 99.99% by weight or more is used as the main component of the bonding wire is to reduce variations in characteristic values such as ball formability and strength due to the inclusion of various unavoidable impurities. be.

本発明者はこのような高純度銀に種々の元素を添加して
銀合金を得、これを伸線加工してワイヤーとし、常温時
及び加熱時の破断強度を調べた。The present inventor added various elements to such high-purity silver to obtain a silver alloy, wire-drawn this to make a wire, and examined the breaking strength at room temperature and when heated.

その結果、アルミニウム、珪素、ゲルマらラム、錫、及
びアンチモンが強度の改善に極めて効果のあることを見
出した。これらの元素は銀合金中の含有率が増すほど破
断強度が向上する。しかしながら含有率が０．００５重
ｉｉ％未満では強度がまだ充分でなく、実用的でない。As a result, it was found that aluminum, silicon, germanium, tin, and antimony were extremely effective in improving strength. As the content of these elements in the silver alloy increases, the breaking strength improves. However, if the content is less than 0.005% by weight, the strength is still insufficient and is not practical.

従ってこれら元素の含有率は０．００５重量％以上とす
ることが必要である。Therefore, the content of these elements needs to be 0.005% by weight or more.

又、これらの元素の含有率があまり高くなると１ボール
形状が真球にならず、且つボール表面に添加元素の酸化
物が生成し、これをボンディングしても充分な接着力が
得られない。このためこれらの元素の含有率は０．１重
量％までにする必要がある。Furthermore, if the content of these elements is too high, the shape of the ball will not be a perfect sphere, and oxides of the additional elements will be formed on the ball surface, making it impossible to obtain sufficient adhesive strength even when bonded. Therefore, the content of these elements needs to be 0.1% by weight or less.

添加する元素はアルミニウム、珪素、ゲルマニウム、錫
、アンチモンのうち少なくとも一種であれば良く、組合
せて用いても良い。The element to be added may be at least one of aluminum, silicon, germanium, tin, and antimony, and may be used in combination.

本発明のボンディングワイヤーは次のようにして製造し
得る。即ち、高純度銀を不活性ガス雰囲気中のルツボ中
で溶解し、これに上記元素を添加して合金化し、鋳造後
鍛造又は溝ロール等で一定の線径まで圧延した後、順次
口径の小さいダイスを用いて伸線加工する。添加元素が
揮発し易い場合は予め高純度銀で母合金化して含有率を
測定しておき、この母合金を高純度銀と配合するように
すれば良い。The bonding wire of the present invention can be manufactured as follows. That is, high-purity silver is melted in a crucible in an inert gas atmosphere, the above elements are added to it to form an alloy, and after casting, it is forged or rolled to a certain wire diameter with grooved rolls, etc. Wire drawing is performed using a die. If the added element is likely to volatilize, it may be necessary to form a mother alloy with high-purity silver in advance, measure the content, and then mix this mother alloy with high-purity silver.

本発明のボンディングワイヤーは純銀線に比べて＆ｌ斯
強度が充分高く、高速自動ボンダーの使用に耐え、又、
熱間強度も充分高いためにワイヤーボンディング後の気
密封止のためのキャップのろう付は又は樹脂モールドに
よる加熱を受けてもワイヤーの断線や変形を生じない。The bonding wire of the present invention has sufficiently high strength compared to pure silver wire, can withstand the use of high-speed automatic bonders, and
Since the hot strength is sufficiently high, the wire does not break or deform even when the cap is brazed for airtight sealing after wire bonding or when heated by a resin mold.

又、本発明のワイヤーは伸線後の破断強度の経時変化が
小さいため、比較的長い時間保管後に使用に供しても差
支えない程度に強度を維持できるので、半導体装置の組
立にとって極めて好都合である。Furthermore, since the wire of the present invention shows little change over time in its breaking strength after being drawn, it can maintain its strength to the extent that it can be used even after being stored for a relatively long time, making it extremely convenient for assembling semiconductor devices. .

実施例 純度９９．９９９重量−の高純度銀を原料とし、これに
アルミニウム、珪素、ゲルマニウム、錫、アンチモンを
種々の割合で添加して下記表に示す組成の銀合金インゴ
ットを得た。このインゴットに鍛造１次いで伸線加工を
施し、直径Ｑ、Ｑ３Ｑｗの銀合金線を製造した。この合
金線を室温における破断伸び率が４％程度になるように
熱処理した後１室温における破断強度、８５０１：’で
２０秒間加熱中の破断強度、室温（ｊａ５Ｃ）で１２０
時間放置後の破断強度を測定した。測定結果を次表に示
す〇次表中Ａ１−２１は本発明の実施例、屋２ｇは比較
例である。Example High purity silver with a purity of 99.999 weight was used as a raw material, and aluminum, silicon, germanium, tin, and antimony were added in various proportions to obtain silver alloy ingots having the compositions shown in the table below. This ingot was forged and then wire-drawn to produce a silver alloy wire with a diameter of Q and Q3Qw. After heat-treating this alloy wire so that the elongation at break at room temperature is approximately 4%, the breaking strength at room temperature is 8501: The breaking strength during heating for 20 seconds at room temperature (ja5C) is 120 at room temperature (ja5C).
The breaking strength after standing for a period of time was measured. The measurement results are shown in the following table. In the following table, A1-21 is an example of the present invention, and A2g is a comparative example.

次表の結果から本発明のボンディング９イヤーは純銀線
と比較して室温強度、熱間強度何れにおいても向上して
おり、室温で長時間放置しても、強度の低下が小さいこ
とが判る。From the results in the following table, it can be seen that the bonding 9-year wire of the present invention has improved both room temperature strength and hot strength as compared to pure silver wire, and that even if it is left at room temperature for a long time, the decrease in strength is small.

Claims (1)

【特許請求の範囲】[Claims] （１）　アルミニウム、珪素、ゲルマニウム、錫及びア
ンチモンからなる群から選ばれた少なくとも一種の元素
を０．００５〜０．１重量％含有させたことを特徴とす
る残部純度９９．９９重量％以上の高純度銀からなるボ
ンディングワイヤー。(1) Containing 0.005 to 0.1% by weight of at least one element selected from the group consisting of aluminum, silicon, germanium, tin, and antimony, with a balance purity of 99.99% by weight or more. Bonding wire made of high purity silver.
JP59016835A 1984-01-31 1984-01-31 Bonding wire Pending JPS60162741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59016835A JPS60162741A (en) 1984-01-31 1984-01-31 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59016835A JPS60162741A (en) 1984-01-31 1984-01-31 Bonding wire

Publications (1)

Publication Number Publication Date
JPS60162741A true JPS60162741A (en) 1985-08-24

Family

ID=11927252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59016835A Pending JPS60162741A (en) 1984-01-31 1984-01-31 Bonding wire

Country Status (1)

Country Link
JP (1) JPS60162741A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775511A (en) * 1986-07-08 1988-10-04 William Kono Method of sulfide tarnish inhibiting of silver-copper, silver-gold and silver-copper-gold alloys
JPS6487736A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for silver extra thin wire
US6139652A (en) * 1997-01-23 2000-10-31 Stern-Leach Tarnish-resistant hardenable fine silver alloys
EP1219717A1 (en) * 2000-12-20 2002-07-03 Allgemeine Gold- Und Silberscheideanstalt Ag Silver alloy
CN103131885A (en) * 2011-11-21 2013-06-05 赫劳斯材料工艺有限及两合公司 Silver bond wire for semiconductor devices
JP5467445B1 (en) * 2013-07-23 2014-04-09 相田化学工業株式会社 Decorative silver alloy
CN112143931A (en) * 2020-09-18 2020-12-29 国金黄金股份有限公司 Low-heat-conductivity silver material, preparation method thereof and silverware
WO2022085365A1 (en) * 2020-10-20 2022-04-28 日鉄マイクロメタル株式会社 Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775511A (en) * 1986-07-08 1988-10-04 William Kono Method of sulfide tarnish inhibiting of silver-copper, silver-gold and silver-copper-gold alloys
JPS6487736A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for silver extra thin wire
US6139652A (en) * 1997-01-23 2000-10-31 Stern-Leach Tarnish-resistant hardenable fine silver alloys
EP1219717A1 (en) * 2000-12-20 2002-07-03 Allgemeine Gold- Und Silberscheideanstalt Ag Silver alloy
CN103131885A (en) * 2011-11-21 2013-06-05 赫劳斯材料工艺有限及两合公司 Silver bond wire for semiconductor devices
JP2013110410A (en) * 2011-11-21 2013-06-06 Heraeus Materials Technology Gmbh & Co Kg Bonding wire for semiconductor devices
EP2595184A3 (en) * 2011-11-21 2013-11-06 Heraeus Materials Technology GmbH & Co. KG Silver bond wire for semiconductor devices
JP5467445B1 (en) * 2013-07-23 2014-04-09 相田化学工業株式会社 Decorative silver alloy
CN112143931A (en) * 2020-09-18 2020-12-29 国金黄金股份有限公司 Low-heat-conductivity silver material, preparation method thereof and silverware
WO2022085365A1 (en) * 2020-10-20 2022-04-28 日鉄マイクロメタル株式会社 Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE

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