JPH0131692B2 - - Google Patents
Info
- Publication number
- JPH0131692B2 JPH0131692B2 JP57175499A JP17549982A JPH0131692B2 JP H0131692 B2 JPH0131692 B2 JP H0131692B2 JP 57175499 A JP57175499 A JP 57175499A JP 17549982 A JP17549982 A JP 17549982A JP H0131692 B2 JPH0131692 B2 JP H0131692B2
- Authority
- JP
- Japan
- Prior art keywords
- gold
- wire
- purity
- boron
- rolled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052737 gold Inorganic materials 0.000 claims abstract description 11
- 239000010931 gold Substances 0.000 claims abstract description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 229910001020 Au alloy Inorganic materials 0.000 abstract description 8
- 239000003353 gold alloy Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 238000005266 casting Methods 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 238000005242 forging Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01038—Strontium [Sr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
本発明は半導体素子と外部リードとの電気的接
続に用いられるボンデイングワイヤーに関する。
半導体装置の組立において、半導体素子と外部
リードを金属線でボンデイングする方式が一般的
である。このような金属線として金線及びアルミ
ニウム線が用いられ、前者は熱圧着で、後者は超
音波でボンデイングされている。金線を用いる熱
圧着ボンデイングの工程は大略、(i)ボンデイング
キヤピラリーを通した金線の先端を電気的に又は
水素炎により熔融してボールを形成する過程、(ii)
該ボールを半導体素子上の電極にキヤピラリーを
押し付けて接合せしめるボールボンド過程、(iii)キ
ヤピラリーを移動して金線ループを形成した後外
部リード上に金線を押し付け接合せしめるウエツ
ジボンド過程、及び(iv)金線を挾んで上方に引張
り、金線を破断した後キヤピラリーを半導体素子
上に移動させる過程、から成つており、全過程は
200〜300℃の加熱雰囲気中で行なわれる。
このようなボンデイング工程はワイヤーボンダ
ーによつて手動的又は自動的に行なうことができ
る。ところでこのようなボンデイングに使用され
る金線は性質にバラツキがあるとボール形状、ル
ープ形状、接合強度が区々となり、半導体装置の
信頼性を低下せしめることから純度99.99％以上
の高純度金を用いるようにしている。然るに近年
半導体装置特にICの組立コストを低減するため
自動ボンダーの一層の高速化が計られてきたが、
上記高純度金線はこのような高速化に適合し得な
いことが明らかになつてきた。その理由は高純度
金線の機械的強度特に熱間における破断強度の低
い点にあり、キヤピラリーの高速移動で金線が引
張られた際、その引張り力が金線の破断強度を超
えることがあり、そのためボンデイング中に線切
れが頻発するからである。又、線切れに至らず何
とかボンデイング出来たとしても、一度熱を受け
た高純度金線は著るしく軟化し、ループ形状を保
つだけの強さを殆んど失なう結果、ループが垂れ
て（これをループタレと称する）素子又は素子を
塔載している金属部に接触し、動作不良の原因と
なることもある。
このような高純度金線の欠点を解消するため
Ca、Beを微量添加した金合金線が提案されてい
る（特開昭53−105968号、特開昭53−112059号）
これらの金合金線は熱間強度が高純度金線の常温
強度程度あり、これによつて高速ボンダーはその
性能を最大限に発揮できるようになつた。
本発明者等はCa、Be以外の種々の元素につい
て実験を重ねた結果、硼素（Ｂ）も又、同様の効
果をもたらすことを見出して本発明に到達したも
のである。即ち、本発明のボンデイングワイヤー
は純度99.99重量％以上の金に0.0001〜0.01重量％
の硼素を含有した金合金線とした点に特徴があ
る。
硼素の含有率は大きい程常温強度、熱間強度共
に大きくなるが、0.01重量％を超えるとボール形
状が真球にならなくなるので0.01重量％以下とす
る必要がある。また硼素の含有量が0.0001重量％
以下では硼素含有による効果が殆んど生じないの
で硼素の含有率は0.0001〜0.01重量％とする必要
がある。より好ましい硼素の含有率は0.0005〜
0.006重量％である。
本発明に用いる金原料は純度99.99％以上であ
れば良い。通常フオーナインと称する純金中には
不純物としてFe、Si、Mg、Pb、Cu、Ag等を含
んでいる。これら不純物の含有率は産地により、
又メーカーにより一定しないので望ましくはフア
イブナイン（純度99.999％以上）を用いるのが良
い。
本発明のボンデイングワイヤーは次のようにし
て製造し得る。
即ち、所望のＢ含有率とするためＢ含有率既知
のAu−Ｂ母合金と高純度金の配合比を決め、そ
れぞれ秤量して不活性ガス雰囲気中のルツボ中で
熔解し、鋳造後鍛造又は溝ロール等で一定の線径
まで圧延した後、順次口径の小さいダイスを用い
て伸線加工する。
本発明の金合金組成は純金線に比べて引張強度
が大きいため、伸線加工中の断線も著るしく減少
する利点もある。
以下に実施例を示す。
実施例
金原料としてフアイブナインの高純度金を用
い、Ｂを0.0003、0.0014及び0.0047重量％含有す
る金合金インゴツトを作成し、これらに鍛造、伸
線加工を施して直径0.0254mmのボンデイングワイ
ヤーを製造した。伸線後のワイヤーを室温におけ
る破断伸び率（δ）が４％程度になるように熱処
理した後、室温における破断強度（σB）、破断伸
び率、250℃に加熱下の破断強度、破断伸び率を
測定した。
測定結果を次表に示す。
The present invention relates to bonding wires used for electrically connecting semiconductor elements and external leads. 2. Description of the Related Art In assembling semiconductor devices, it is common to bond semiconductor elements and external leads using metal wires. Gold wires and aluminum wires are used as such metal wires, the former being bonded by thermocompression bonding and the latter bonding by ultrasonic waves. The process of thermocompression bonding using gold wire is roughly as follows: (i) the process of melting the tip of the gold wire passed through the bonding capillary electrically or with a hydrogen flame to form a ball; (ii)
(iii) a ball bonding process in which the ball is bonded to an electrode on a semiconductor element by pressing a capillary; (iii) a wedge bonding process in which the capillary is moved to form a gold wire loop and then a gold wire is pressed and bonded onto an external lead; and (iv) ) The process consists of pinching the gold wire and pulling it upward, breaking the gold wire, and then moving the capillary onto the semiconductor element.
It is carried out in a heated atmosphere of 200-300°C. Such a bonding process can be performed manually or automatically using a wire bonder. By the way, if the gold wire used for such bonding has variations in properties, the ball shape, loop shape, and bonding strength will vary, reducing the reliability of semiconductor devices. I try to use it. However, in recent years, efforts have been made to further increase the speed of automatic bonders in order to reduce assembly costs for semiconductor devices, especially ICs.
It has become clear that the above-mentioned high-purity gold wire cannot be adapted to such high speeds. The reason for this is that high-purity gold wire has low mechanical strength, especially its breaking strength under hot conditions.When the gold wire is pulled by high-speed movement of the capillary, the tensile force may exceed the breaking strength of the gold wire. This is because wire breakage occurs frequently during bonding. Furthermore, even if bonding is possible without breaking the wire, the high-purity gold wire that has been exposed to heat will significantly soften and lose most of its strength to maintain its loop shape, causing the loop to sag. (This is called loop sagging) and may come into contact with the element or the metal part on which the element is mounted, causing malfunction. In order to eliminate these drawbacks of high-purity gold wire
A gold alloy wire with trace amounts of Ca and Be added has been proposed (Japanese Patent Application Laid-open Nos. 105968-1982 and 112059-1983).
The hot strength of these gold alloy wires is comparable to that of high-purity gold wire at room temperature, allowing high-speed bonders to maximize their performance. As a result of repeated experiments with various elements other than Ca and Be, the present inventors discovered that boron (B) also brings about the same effect and arrived at the present invention. That is, the bonding wire of the present invention contains 0.0001 to 0.01% by weight of gold with a purity of 99.99% by weight or more.
It is characterized by the fact that it is made of a gold alloy wire containing boron. The higher the boron content, the higher the strength at room temperature and the hot strength. However, if it exceeds 0.01% by weight, the ball shape will not become a true sphere, so it must be kept at 0.01% by weight or less. In addition, the boron content is 0.0001% by weight.
Below this, the effect of boron content is hardly produced, so the boron content needs to be 0.0001 to 0.01% by weight. More preferable boron content is 0.0005~
It is 0.006% by weight. The gold raw material used in the present invention may have a purity of 99.99% or more. Pure gold, which is usually called phonine, contains impurities such as Fe, Si, Mg, Pb, Cu, and Ag. The content of these impurities varies depending on the production area.
Also, it is not constant depending on the manufacturer, so five nines (purity of 99.999% or more) is preferably used. The bonding wire of the present invention can be manufactured as follows. That is, in order to obtain the desired B content, a blending ratio of an Au-B master alloy with a known B content and high-purity gold is determined, each is weighed and melted in a crucible in an inert gas atmosphere, and after casting, it is forged or After rolling the wire to a certain diameter using grooved rolls, etc., the wire is drawn using successively smaller diameter dies. Since the gold alloy composition of the present invention has higher tensile strength than pure gold wire, it also has the advantage of significantly reducing wire breakage during wire drawing. Examples are shown below. Example Gold alloy ingots containing 0.0003, 0.0014, and 0.0047% by weight of B were prepared using five-nine high-purity gold as a gold raw material, and these were forged and wire-drawn to produce a bonding wire with a diameter of 0.0254 mm. . After the drawn wire is heat-treated so that the elongation at break (δ) at room temperature is approximately 4%, the breaking strength at room temperature (σB), elongation at break, the strength at break when heated to 250℃, and the elongation at break are determined. was measured. The measurement results are shown in the table below.
【表】
又、これらの金合金線を高速ボンダーによるワ
イヤーボンデイングに供したところ、ボール形成
性が良く、ループのたれも認められなかつた。[Table] Furthermore, when these gold alloy wires were subjected to wire bonding using a high-speed bonder, ball forming properties were good and no loop sagging was observed.
Claims (1)
特徴とする残部純度99.99重量％以上の高純度金
からなるボンデイングワイヤー。1. A bonding wire made of high purity gold with a balance purity of 99.99% by weight or more, characterized by containing 0.0001 to 0.01% by weight of boron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175499A JPS5965440A (en) | 1982-10-06 | 1982-10-06 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175499A JPS5965440A (en) | 1982-10-06 | 1982-10-06 | Bonding wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5965440A JPS5965440A (en) | 1984-04-13 |
| JPH0131692B2 true JPH0131692B2 (en) | 1989-06-27 |
Family
ID=15997104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57175499A Granted JPS5965440A (en) | 1982-10-06 | 1982-10-06 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5965440A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4993622A (en) * | 1987-04-28 | 1991-02-19 | Texas Instruments Incorporated | Semiconductor integrated circuit chip interconnections and methods |
-
1982
- 1982-10-06 JP JP57175499A patent/JPS5965440A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5965440A (en) | 1984-04-13 |
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