JPS6030159A - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JPS6030159A JPS6030159A JP58137590A JP13759083A JPS6030159A JP S6030159 A JPS6030159 A JP S6030159A JP 58137590 A JP58137590 A JP 58137590A JP 13759083 A JP13759083 A JP 13759083A JP S6030159 A JPS6030159 A JP S6030159A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- gold
- strength
- thorium
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01205—5N purity grades, i.e. 99.999%
Abstract
Description
【発明の詳細な説明】 続に用いられるボンデイングワイヤーに関する。[Detailed description of the invention] The present invention relates to a bonding wire used in subsequent steps.
半導体装置の組立において、半導体素子と，外部リード
を金属線でボンデイングする方式が一般的である。この
ような金属線として金線及びアルミニウム線が用いられ
、前者は熱圧着で、後者は超音波でボンディングされて
いる。金線を用いる熱圧着ボンディングの工程は大略（
＋）ボンディングキャピラリーを通した金線の先端を電
気的に又は水素炎により溶融してポールを形成する過程
、（１１）該ポールを半導体素子上の電極にキャビラリ
−で押し付けて接合せしめるポールボンド過程、４１１
）キャピラリーを移動して金線ループを形成した後、外
部リード上に金線を押し付は接合せしめる □ウエッジ
ポンド過程、及び帥）金線を挾んで上方に引張り、金線
を破断した後キャビラリ−を半導体素子上に移動させる
過程、から成っており、全過程は２００〜３００Ｃの加
熱雰囲気中で行なわれる。In assembling semiconductor devices, a common method is to bond the semiconductor element and external leads using metal wires. Gold wires and aluminum wires are used as such metal wires, the former being bonded by thermocompression bonding and the latter bonding by ultrasonic waves. The process of thermocompression bonding using gold wire is outlined (
+) A process in which the tip of a gold wire passed through a bonding capillary is melted electrically or with a hydrogen flame to form a pole, (11) A pole bonding process in which the pole is pressed against an electrode on a semiconductor element by a capillary and bonded. , 411
) After moving the capillary to form a gold wire loop, the gold wire is pressed onto the external lead and bonded. - onto the semiconductor element, and the entire process is carried out in a heated atmosphere at 200 to 300C.
このようなボンディング工程は、ワイヤーボングーによ
って手動的又は自動的に行なうことができる。ところで
このようなボンディングに使用される金線は性質にバラ
ツキがあるとボール形状、ループ形状、接合強度が区々
となり、半導体装置の信頼性を低下せしめることから純
度が９９．９９％以上の高純度金を用いるようにしてい
る。然るに近年半導体装置、特にＩＣの組立コストを低
減するため自動ボングーの一層の高速化が計られてきた
が、上記高純度金線はこのような高速化に適合し得ない
ことが明らかになってきた。その痴由は高純度金線の機
械的強度特に熱間における破断強度の低い点にあり、キ
ャピラリーの高速移動で金線が引張られた際その引張り
力が金線の破断強度を超えることがあり、そのためボン
ディング中に線切れが頻発するからである。又、線切れ
に至らず何とかボンディング出来たとしても、−産熱を
受けた高純度金線は著るしく軟化し、ループ形状を保つ
だけの強さを殆んど失なう結果、ループが垂れて（これ
をループタレと称する）素子又は素子を塔載している金
属部に接触し、動作不良の原因となることもある。Such a bonding process can be performed manually or automatically using a wire bong. However, if the properties of the gold wire used for such bonding vary, the ball shape, loop shape, and bonding strength will vary, reducing the reliability of semiconductor devices. I try to use pure gold. However, in recent years, attempts have been made to further increase the speed of automatic bongos in order to reduce the assembly costs of semiconductor devices, especially ICs, but it has become clear that the high-purity gold wire mentioned above cannot be adapted to such increased speeds. Ta. The reason for this is that high-purity gold wire has low mechanical strength, especially its breaking strength under hot conditions, and when the gold wire is pulled due to high-speed movement of the capillary, the tensile force may exceed the breaking strength of the gold wire. This is because wire breakage occurs frequently during bonding. Furthermore, even if bonding is possible without breaking the wire, the high-purity gold wire will become significantly softer due to heat generation and lose most of its strength to maintain the loop shape, resulting in the loop becoming It may sag (this is called loop sag) and come into contact with the element or the metal part on which the element is mounted, causing malfunction.
このような高純度金線の欠点を解消するためＯａ。In order to eliminate these drawbacks of high purity gold wire, Oa.
Ｂｅを微量添加した金合金線が提案されている（特開昭
３３−７０３７６ｇ号、特開昭！；３− ／／２θ左？
号）これらの金合金線は熱間強度が高純度金線の常温強
度程度あり、これによって高速ボンダーはその性能を最
大限に発揮できるようになった。A gold alloy wire with a trace amount of Be added has been proposed (JP-A No. 33-70376g, JP-A-Sho!; 3- //2θ left?
The hot strength of these gold alloy wires is comparable to the room temperature strength of high-purity gold wires, allowing high-speed bonders to maximize their performance.
本発明者等はＯａ、Ｂｅ以外の種々の元素について実験
を重ねた結果、トリウム（Ｔｈ）も又、同様の効果をも
たらすことを見出して本発明に到達したものである。As a result of repeated experiments with various elements other than Oa and Be, the present inventors discovered that thorium (Th) also brings about the same effect and arrived at the present invention.
即ち、本発明のボンディングワイヤーは純度７７．７９
重量％以上の金に０．θ０θ／〜０．０／重爪％のトリ
ウムを含有した金合金線とした点に特徴がある。That is, the bonding wire of the present invention has a purity of 77.79.
0.0% by weight or more of gold. It is characterized in that it is a gold alloy wire containing thorium of θ0θ/~0.0/heavy %.
トリウムの含有率は大きい程常温強度、熱間強度共に大
きくなるが、ｏ、ｏｉ重量％を超えるとボール形状が真
球にならなくなるので０．０／重量％以下とする必要が
ある。The higher the thorium content, the higher the strength at room temperature and the hot strength. However, if it exceeds o and oi weight %, the ball shape will not become a true sphere, so it must be 0.0/weight % or less.
またトリウムの含有率がｏ、ｏｏｏｉ重量％以下ではト
リウム含有による効果が殆んど生じないので１トリウム
の含有率は０．０００／〜θ、０／重量％とする必要が
ある。より好ましいトリウムの含有率は０、００θ５〜
ｏ、 ｏｏｔ、重量％である。Further, if the thorium content is less than o, oooi weight %, the effect of containing thorium is hardly produced, so the 1 thorium content needs to be 0.000/~θ, 0/weight %. More preferable thorium content is 0,00θ5~
o, oot, weight%.
本発明に用いる金属湯は純題７７．９７重量％以上であ
れば良い。通常フォーナインと称する純金中には不純物
としてＦθ、Ｓｌ、Ｍｇ 、 、Ｐｂ 、、 Ｏｕｓ
Ａｇ等を含んでいる。これら不純物の含有率は産地によ
り、又メーカーにより一定しないので望ましくはファイ
ブナイン（純度７９．９９９重量％以上）を用いるのが
良い。The metal hot water used in the present invention may have a pure content of 77.97% by weight or more. Impurities such as Fθ, Sl, Mg, , Pb, , Ous are usually present in pure gold called four nines.
Contains Ag etc. Since the content of these impurities varies depending on the place of production or manufacturer, it is preferable to use five nines (purity of 79.999% by weight or more).
本発明のボンディングワイヤーは次のようにして製造し
得る。The bonding wire of the present invention can be manufactured as follows.
即ち、所望のＴｈ含有率とするためＴｈ含有率既知のＡ
ｕ −Ｔｈ母合金と高純度金の配合比を決め、それぞれ
秤量して不活性ガス雰囲気中のルツ最中で熔解し、鋳造
後鍛造又は溝ロール等で一定の線径まで圧延した後、順
次口径の小さいダイスを用いて伸線加工する。That is, in order to obtain the desired Th content, A with a known Th content is used.
The mixing ratio of u-Th master alloy and high-purity gold is determined, each is weighed and melted in a melting pot in an inert gas atmosphere, and after casting, forging or rolling to a certain wire diameter with grooved rolls, etc., is performed sequentially. Wire drawing is performed using a small diameter die.
本発明の金合金組成は純金線に比べて引張強度が大きい
ため、伸線加工中の断線も著るしく減少する利点もある
。Since the gold alloy composition of the present invention has a higher tensile strength than pure gold wire, it also has the advantage of significantly reducing wire breakage during wire drawing.
以下に実施例を示す。Examples are shown below.
実施例
金属湯としてファイブナインの高純度金を用い、トリウ
ムを０．θｏｏｌＩ、 ｏ、ｏｏｔ２及び０．０θＳコ
重量％含有する金合金インゴットを作成し、これらに鍛
造、伸線加工を施して直径θ、ｏｓｓｙｔｎｍのボンデ
ィングワイヤーを製造した。伸線後のワイヤーを室温に
おける破断伸び率（δ）がｔ％程度になるように熱処理
した後、室温における破断強度（σＢ） 、破断伸び率
、ユ３θＣに加熱下の破断強度、破断伸び率を測定した
。Example: Five Nine high purity gold was used as the metal hot water, and thorium was added to 0. Gold alloy ingots containing θoolI, o, oot2, and 0.0θS in weight percent were prepared, and these were forged and wire-drawn to produce bonding wires with a diameter of θ and ossytnm. After the drawn wire is heat-treated so that the elongation at break (δ) at room temperature is approximately t%, the breaking strength at room temperature (σB), the elongation at break, the elongation at break at 3θC, the strength at break under heating, and the elongation at break are determined. was measured.
測定結果を次表に示す。The measurement results are shown in the table below.
又、これらの金合金線を高速ボンダーによるワイヤーボ
ンディングに供したところ、ボール形成性が良く、ルー
プのタレも認められなかった。Furthermore, when these gold alloy wires were subjected to wire bonding using a high-speed bonder, ball forming properties were good and no loop sagging was observed.
出願人 住友金属鉱山株式会社 代理人 弁理土中村勝成 、７′Applicant: Sumitomo Metal Mining Co., Ltd. Agent: Patent attorney Katsunari Donakamura, 7'
Claims (1)
）を含有することを特徴とする残部純度背、９９重景
％以上の高純度金からなるボンディングワイヤー〇(1) 0.0007-0.01% by weight of thorium (Th
) A bonding wire made of high purity gold with a balance purity of 99% or more
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58137590A JPS6030159A (en) | 1983-07-29 | 1983-07-29 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58137590A JPS6030159A (en) | 1983-07-29 | 1983-07-29 | Bonding wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6030159A true JPS6030159A (en) | 1985-02-15 |
Family
ID=15202260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58137590A Pending JPS6030159A (en) | 1983-07-29 | 1983-07-29 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6030159A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169595U (en) * | 1986-04-17 | 1987-10-27 | ||
| JPS63114586U (en) * | 1987-01-20 | 1988-07-23 |
-
1983
- 1983-07-29 JP JP58137590A patent/JPS6030159A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169595U (en) * | 1986-04-17 | 1987-10-27 | ||
| JPS63114586U (en) * | 1987-01-20 | 1988-07-23 |
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