JPS5965439A - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JPS5965439A JPS5965439A JP57175498A JP17549882A JPS5965439A JP S5965439 A JPS5965439 A JP S5965439A JP 57175498 A JP57175498 A JP 57175498A JP 17549882 A JP17549882 A JP 17549882A JP S5965439 A JPS5965439 A JP S5965439A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- purity
- strontium
- wire
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01038—Strontium [Sr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
Abstract
Description
【発明の詳細な説明】 続に用いられるボンデイングワイヤーに関する。[Detailed description of the invention] The present invention relates to a bonding wire used in subsequent steps.
半導体装置の組立において、半導体素子と外部リードを
金属線でボンデイングする方式が一般的である。このよ
うな金属線として金線及びアルミニウム線が用いられ、
前者は熱圧着で、後者は超音波でボンティングされてい
る。金線を用いる熱圧着ボンディングの工程は大略、（
ｉ）ボンデインクキャピラリーを通した金線の先端を電
気的に又は水素炎により熔融してボールを形成する過程
、（ｉＩ）該ボールを半導体素子上の電極にキヤビンＩ
Ｊ −て押し伺けて接合せしめるボールセンド過程、（
ｔｉｌｌキャピラリーを移動して金線ループを形成した
後、外部リード上に金線を押し付は接合せしめるウェッ
ジボンド過程、及び（１ｌｌＩ）金線を挾んで上方に引
張り、金線を破断した後キャピラリーを半導体素子上に
移動させる過程、から成っており、全過程は２００〜３
ｏｏ Ｃの加熱雰囲気中で行なわれる。2. Description of the Related Art In assembling semiconductor devices, it is common to bond semiconductor elements and external leads using metal wires. Gold wire and aluminum wire are used as such metal wires,
The former is bonded by thermocompression, and the latter is bonded by ultrasonic waves. The process of thermocompression bonding using gold wire is roughly as follows (
i) A process of melting the tip of a gold wire passed through a bonded ink capillary electrically or with a hydrogen flame to form a ball, (i) attaching the ball to an electrode on a semiconductor element using a capillary I.
The ball sending process, in which the ball is pushed and joined by J-
After the capillary is moved to form a gold wire loop, the gold wire is pressed onto the external lead and bonded. (1llI) The gold wire is pinched and pulled upward to break the gold wire, and then the capillary is closed. The entire process consists of a process of transferring 200 to 3
It is carried out in a heated atmosphere of oo C.
このようなボンディング工程はワイヤーボングーによっ
て手動的又は自動的に行なうことができる。ところでこ
のようなボンディングに使用される金線は性質にバラツ
キがあるとボール形状、ループ形状、接合強度が区々と
なり、半導体装置の信頼性を低下せしめることから純度
が９９．９９％以上の高純度金を用いるようにしている
。然るに近年半導体装置、特に工Ｃの組立コストを低減
するため自動ボングーの一層の高速化が計られてきたが
、上記高純度金線はこのような高速化に適合し得ないこ
とが明らかになってきた。その理由は高純度金線の機械
的強度特に熱間における破断強度の低い点にあり、□キ
ャビラリーの高速移動で金線が引張られた際その引張り
力が金線の破断強度を超えることがあり、そのためボン
デ・ｒジグ中に線切れが頻発するからである。又、線切
れに至らず何とかボンディング出来たとしても、・一度
熱を受けた高純度金線は奢るしく軟化し、ループ形状を
保つだけの強さを殆んど失なう結果、ループが垂れて（
これをループタレと称する）素子又は素子を塔載してい
る金属部に接触し、動作不良の原因となることもある。Such a bonding process can be performed manually or automatically using a wire bong. However, if the properties of the gold wire used for such bonding vary, the ball shape, loop shape, and bonding strength will vary, reducing the reliability of semiconductor devices. I try to use pure gold. However, in recent years, attempts have been made to further increase the speed of automatic bongos in order to reduce the assembly costs of semiconductor devices, especially for process C, but it has become clear that the above-mentioned high-purity gold wire is not compatible with such increased speeds. It's here. The reason for this is that the mechanical strength of high-purity gold wire, especially its breaking strength in hot conditions, is low. □When the gold wire is pulled by high-speed movement of the cavity, the tensile force may exceed the breaking strength of the gold wire. This is because wire breakage occurs frequently during Bonde/R jigs. Also, even if you manage to bond without breaking the wire, the high-purity gold wire once exposed to heat will become luxuriously soft and lose most of its strength to maintain its loop shape, causing the loop to sag. hand(
(This is called loop sag) It may come into contact with the element or the metal part on which the element is mounted, causing malfunction.
このような高純度金線の欠点を解消するためＣａ。In order to eliminate such drawbacks of high purity gold wire, Ca.
Ｂｅを微量添加した金合金線が提案されている（特開昭
５３−／θに９６ｇ号、特開昭、！；３− ／／２０に
９号）これらの金合金線は熱間強度が高純度金線の常温
強度程度あり、これによって高速ボンダーはその性能を
最大限に発揮できるようにな−った。Gold alloy wires with a small amount of Be added have been proposed (JP-A No. 96g in 1983-/θ, No. 9 in JP-A-Sho, !; 3-//20). These gold alloy wires have a high hot strength. It has a strength comparable to that of high-purity gold wire at room temperature, allowing high-speed bonders to maximize their performance.
本発明者等はＣａ、Ｅｅ以外の種々の元素について実験
を重ねた結果、ストロンチウム（Ｓｒ）モ又、同様の効
果をもたらすことを見出して本発明に到達したものであ
る。即ち、本発明のボンディングワイヤーは純度ｑｑ、
ｑｑ重量％以」二の金に０．０００／〜０．０／重量％
のストロンチウムを含イｆした金合金ストロンチウムの
含有率は大きい程常温強度、熱間強度共に大きくなるが
、０．０７重量％を超えるとボール形状が真球にならな
くなるので０．０７重量％以下とする必要がある。As a result of repeated experiments with various elements other than Ca and Ee, the inventors of the present invention discovered that strontium (Sr) also brings about the same effect and arrived at the present invention. That is, the bonding wire of the present invention has a purity of qq,
qq% by weight or more 0.000/~0.0/% by weight
A gold alloy containing strontium The higher the strontium content, the higher the strength at room temperature and the hot strength.However, if it exceeds 0.07% by weight, the ball shape will not become a true sphere, so it should be 0.07% by weight or less. It is necessary to do so.
またストロンチウムの含有率が０．０００７重量％以下
ではストロンチウム含有による効果が殆んど生じないの
で、ストロンチウムの含有率はθ、ｏｏθ／〜０．０／
重Ｍ％とす゛る必要がある。より好ましいストロンチウ
ムの含有率はθ、０θＯｋ〜０．０先重量％である。Furthermore, if the strontium content is 0.0007% by weight or less, the effect of strontium content will hardly occur, so the strontium content should be θ, ooθ/~0.0/
It is necessary to make the weight M%. A more preferable strontium content is θ, 0θOk to 0.0% by weight.
本発明に用いる全原料は純度９９．９９％以上であれば
良い。通常フォーナインと称する純金中には不純物とし
てＦｅ、Ｓｉ、Ｍｇ、Ｐｂ、ＯｕＸＡｇ等を含んでいる
。これら不純物の含有率は産地により、又メーカーによ
り一定しないので望ましくはファイブナイン（純度９９
．９９９％以上）を用いるのが良い。All raw materials used in the present invention may have a purity of 99.99% or more. Pure gold, commonly called four nines, contains impurities such as Fe, Si, Mg, Pb, OuXAg, etc. The content of these impurities varies depending on the production area and manufacturer, so five nines (purity 99) is preferable.
．． 999% or more).
本発明のボンディングワイヤーは次のようにして製造し
得る。The bonding wire of the present invention can be manufactured as follows.
即ち、所望のＳｒ含有率とするためＳｒ含有率既知のＡ
ｕ −３ｒ母合金と高純度金の配合比を決め、尋れぞれ
秤量して不活性ガス雰囲気中のル゛ンボ中で熔解し、鋳
造後鍛造又は溝ロール等で一定の線径まで圧延した後、
順次口径の小さいダイスを用いて伸線加工する。That is, in order to obtain the desired Sr content, A with a known Sr content is used.
The mixing ratio of the u-3r master alloy and high-purity gold is determined, each weighed and melted in a chamber in an inert gas atmosphere, and after casting, the wire is forged or rolled to a certain wire diameter using groove rolls, etc. After that,
Wire drawing is performed using successively smaller diameter dies.
本発明の金合金組成は純金線に比べて引張強度が大きい
ため、伸線加工中の断線も著るしく減少する利点もある
。Since the gold alloy composition of the present invention has a higher tensile strength than pure gold wire, it also has the advantage of significantly reducing wire breakage during wire drawing.
以下に実施例を示す。 ゛実施例
全原料としてファイブナインの高純度金を用い、ストロ
ンチウムをθ、″θ００Ｓ１θ、Ｏθ／／及びｏ、ｏｏ
ｓｔ重量％含有する金合金インゴットを作成し、これら
に鍛造、伸線加工を施して直径ｏ、 ｏ、２ｓｐ ｔｎ
ｍのボンディングワイヤーを製造した。伸線後のワイヤ
ーを室温における破断伸び率（δ）がｌ１％程度になる
ように熱処理した後、室温における破断強度（σＢ）、
破断伸び率、−タＯＣに加熱下の破断強度、破断伸び率
を測定した。Examples are shown below.゛Example Using five nines high purity gold as all raw materials, strontium was θ, ``θ00S1θ, Oθ// and o, oo
Gold alloy ingots containing st wt% are prepared and subjected to forging and wire drawing to obtain diameters o, o, 2sp tn.
m bonding wires were manufactured. After the drawn wire is heat-treated so that the elongation at break (δ) at room temperature is about 11%, the breaking strength at room temperature (σB),
The elongation at break, the strength at break under heating, and the elongation at break were measured.
測定結果を次表に示す。The measurement results are shown in the table below.
又、これらの金合金線を高速ボンダーによるワイヤーボ
ンディングに供したところ、ボール形成性が良く、ルー
プのタレも認められなかった。Furthermore, when these gold alloy wires were subjected to wire bonding using a high-speed bonder, ball forming properties were good and no loop sagging was observed.
Claims (1)
チウムを含有することを特徴とする残部純度９９．９９
Ｍ量％以上の高純度金からなるボンディングワイヤー
〇(1) Remaining purity 99.99 characterized by containing strontium of θ, 000/~0.0/wt%
Bonding wire made of high purity gold with an amount of M% or more
〇
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175498A JPS5965439A (en) | 1982-10-06 | 1982-10-06 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175498A JPS5965439A (en) | 1982-10-06 | 1982-10-06 | Bonding wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5965439A true JPS5965439A (en) | 1984-04-13 |
| JPH0131691B2 JPH0131691B2 (en) | 1989-06-27 |
Family
ID=15997086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57175498A Granted JPS5965439A (en) | 1982-10-06 | 1982-10-06 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5965439A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61220343A (en) * | 1985-03-26 | 1986-09-30 | Sumitomo Metal Mining Co Ltd | Gold tape |
| US4993622A (en) * | 1987-04-28 | 1991-02-19 | Texas Instruments Incorporated | Semiconductor integrated circuit chip interconnections and methods |
| WO2009060662A1 (en) * | 2007-11-06 | 2009-05-14 | Tanaka Denshi Kogyok. K. | Bonding wire |
-
1982
- 1982-10-06 JP JP57175498A patent/JPS5965439A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61220343A (en) * | 1985-03-26 | 1986-09-30 | Sumitomo Metal Mining Co Ltd | Gold tape |
| US4993622A (en) * | 1987-04-28 | 1991-02-19 | Texas Instruments Incorporated | Semiconductor integrated circuit chip interconnections and methods |
| WO2009060662A1 (en) * | 2007-11-06 | 2009-05-14 | Tanaka Denshi Kogyok. K. | Bonding wire |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0131691B2 (en) | 1989-06-27 |
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