JP3312348B2 - Gold alloy wire for bonding - Google Patents

Gold alloy wire for bonding

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Publication number
JP3312348B2
JP3312348B2 JP09657394A JP9657394A JP3312348B2 JP 3312348 B2 JP3312348 B2 JP 3312348B2 JP 09657394 A JP09657394 A JP 09657394A JP 9657394 A JP9657394 A JP 9657394A JP 3312348 B2 JP3312348 B2 JP 3312348B2
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JP
Japan
Prior art keywords
bonding
weight
ppm
wire
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP09657394A
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Japanese (ja)
Other versions
JPH07305126A (en
Inventor
信一 花田
義人 山本
信次 白川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
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Priority to JP09657394A priority Critical patent/JP3312348B2/en
Publication of JPH07305126A publication Critical patent/JPH07305126A/en
Application granted granted Critical
Publication of JP3312348B2 publication Critical patent/JP3312348B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01ELECTRIC ELEMENTS
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01004Beryllium [Be]
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    • H01L2924/012055N purity grades, i.e. 99.999%
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    • H01L2924/207Diameter ranges
    • H01L2924/20753Diameter ranges larger or equal to 30 microns less than 40 microns

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To produce an alloy wire for bonding in which wire cutting in time neck part of a bonding wire can remarkably be reduced even being exposed to a severe heat cycle environment after being subjected to reverse deformation at the time of assembling a semiconductor device. CONSTITUTION:In a master alloy in which a gold matrix of 99.999wt.% is incorporated with, by weight, 0.0001 to 0.01% Y, 0.0002 to 0.2% Pt, 0.0001 to 0.01% La, at least one kind of Ag and Pd by 0.0002 to 0.2%, at least one kind of 0.0001 to 0.002% Be and 0.0001 to 0.01% Ca is melted in a vacuum melting furnace, the master alloy is cast, is repeatedly subjected to cold working using a groove roll and a wire drawing machine and heat treatment and is finished into a fine wire having 30mum final wire diameter and 4% elongation percentage.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は半導体素子の電極と外部
リード部とを接続するために使用するボンディング用金
合金線に関し、さらに詳しくは、半導体装置組み立ての
際、リバース変形を受けた後に過酷な熱サイクル環境に
晒された場合にも、ボンディングワイヤーのネック部で
の断線を大幅に低減することができるボンディング用金
合金線に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding gold alloy wire used for connecting an electrode of a semiconductor element to an external lead portion, and more particularly, to a method of assembling a semiconductor device which is subjected to severe deformation after being subjected to reverse deformation during assembly. The present invention relates to a gold alloy wire for bonding that can significantly reduce disconnection at a neck portion of a bonding wire even when exposed to a severe thermal cycle environment.

【0002】[0002]

【従来の技術とその問題点】従来、半導体素子上の電極
と外部リードを接続する技術としては、金合金線を用い
た超音波併用熱圧着ボンディング法が主として用いられ
ている。また、最近の半導体装置の高速化,高機能化の
要求に伴って電極と外部リードの数が増加した結果、電
極から外部リード迄の配線距離が長くなっている。一方
では、半導体装置を小型,薄型にするため、電極と外部
リードの配線距離を極端に短くすることによって対応を
計られている。この為、多数のリード線を用いながら短
く配線を行うことが要求され、これに対応するために、
ボンディング装置を用いてループを形成する過程で、ル
ープ形成と逆方向へボールネック部を過酷に屈曲させて
変形させた後にループを張る、所謂リバース変形を行う
ことによって、ループ高さとループ形状を安定化させる
試みがなされている。しかし乍ら前述の様なリバース変
形を行って形成されたループは、半導体装置の作動段階
で半導体の発熱に伴う熱サイクルの環境に晒された場
合、ボールネック部に断線不良が発生するという問題が
生じていた。この様な半導体作動中の断線不良を防止す
るために、ボールネック部を過酷に屈曲,変形させてル
ープを張った場合、その後の過酷な熱サイクル試験にお
いて断線が生じることの少ない金合金線が要求されてい
る。
2. Description of the Related Art Conventionally, as a technique for connecting an electrode on a semiconductor element to an external lead, an ultrasonic combined thermo-compression bonding method using a gold alloy wire is mainly used. Further, as the number of electrodes and external leads has increased in accordance with recent demands for higher speed and higher functionality of semiconductor devices, the wiring distance from the electrodes to the external leads has become longer. On the other hand, in order to reduce the size and thickness of the semiconductor device, measures are taken by extremely shortening the wiring distance between the electrode and the external lead. For this reason, it is required to perform wiring in a short time while using a large number of lead wires.
In the process of forming a loop using a bonding device, the ball neck is severely bent and deformed in the opposite direction to the loop formation, and then the loop is stretched. Attempts have been made to transform it. However, the loop formed by performing the reverse deformation as described above has a problem that when the semiconductor device is exposed to a heat cycle environment accompanying the heat generation of the semiconductor in the operation stage of the semiconductor device, a disconnection defect occurs in the ball neck portion. Had occurred. In order to prevent such disconnection failure during semiconductor operation, if the ball neck is severely bent and deformed to form a loop, a gold alloy wire that is less likely to be disconnected in a severe thermal cycle test thereafter will be used. Has been requested.

【0003】他方、従来において、ボンディング用金合
金線における断線防止を目的とするものとして次のよう
な提案が成されている。 特開昭63−145729号公報 ボンディング時の断線の低減を目的として、Inを1〜
60ppm含有すると共に、Be,Ca,Geの少なく
とも1種を2〜35ppm含有し、さらにAg,Pd,
Pt,Y,その他の少なくとも1種を1〜10ppm含
有させる。 特開平1−146336号公報 ボンディング後に250℃に保持した時の断線の低減を
目的として、Laを0.2〜50ppm含有すると共
に、Si,Agの少なくとも1種を1〜100ppm含
有し、さらにBe,In,Ge,Caの少なくとも1種
を1〜30ppm含有させる。 特開平2−259034号公報 ボンディング後の振動破断率の低減を目的として、B
e:1〜10ppm、Ca:1〜50ppm、Y:3〜
100ppm、Ag:5〜100ppmを夫々含有させ
る。 特開平5−179375号公報 ボンディング後の振動破断率の低減を目的として、A
l:3〜50ppm、Ca:3〜30ppmを夫々含有
すると共に、Y,La,Be,その他の少なくとも1種
を3〜30ppm含有させる。 特開平5−179376号公報 ボンディング後の振動破断率の低減を目的として、G
a:3〜50ppm、Ca:3〜30ppmを夫々含有
すると共に、Y,La,Be,その他の少なくとも1種
を3〜30ppm含有させる。
On the other hand, conventionally, the following proposals have been made to prevent disconnection of a bonding gold alloy wire. SUMMARY OF THE INVENTION In order to reduce the disconnection at the time of bonding, In is set to 1 to less.
60 ppm, at least one of Be, Ca, and Ge is contained at 2 to 35 ppm, and Ag, Pd,
Pt, Y and at least one other element are contained in an amount of 1 to 10 ppm. SUMMARY OF THE INVENTION For the purpose of reducing the disconnection when the temperature is maintained at 250 ° C. after bonding, La is contained in an amount of 0.2 to 50 ppm, at least one of Si and Ag is contained in an amount of 1 to 100 ppm, and Be is further contained. , In, Ge, and Ca in an amount of 1 to 30 ppm. In order to reduce the vibration rupture rate after bonding,
e: 1 to 10 ppm, Ca: 1 to 50 ppm, Y: 3 to
100 ppm, Ag: 5 to 100 ppm, respectively. SUMMARY OF THE INVENTION In order to reduce the vibration rupture rate after bonding, A
l: 3 to 50 ppm and Ca: 3 to 30 ppm, respectively, and at least one of Y, La, Be, and at least one other is contained by 3 to 30 ppm. SUMMARY OF THE INVENTION In order to reduce the vibration rupture rate after bonding, G
a: 3 to 50 ppm and Ca: 3 to 30 ppm, respectively, and at least one of Y, La, Be, and at least 3 to 30 ppm.

【0004】しかし乍らこれら従来の提案は、ボンディ
ングワイヤーをボールネック部で過酷に屈曲,変形させ
てループを張った後に過酷な熱サイクル環境に晒された
場合でも、ボールネック部での断線の少ない金合金線と
して十分なものとはいえない状態にある。
[0004] However, these conventional proposals have disclosed that even when the bonding wire is severely bent and deformed at the ball neck portion to form a loop, and then exposed to a severe thermal cycle environment, the disconnection at the ball neck portion is prevented. It is in a state where it cannot be said that it is enough as a small amount of gold alloy wire.

【0005】[0005]

【発明が解決しようとする課題】ここに本発明は、下記
(1)〜(3)に記載される目的を同時に達成し得るボ
ンディング用金合金線を提供することを課題とする。 (1)ボールネック部を過酷に屈曲,変形させてループ
を張る、所謂リバース変形を行ってループを形成した場
合において、過酷な熱サイクル環境に晒された場合でも
断線の少ない金合金線であること。 (2)電極数の増加の要求に伴って、より多くの電極を
配置するために電極の寸法を小さくすることが要求され
ており、そのために、小さいボールが真球に形成可能な
こと、及び接合強度の高い金合金線であること。 (3)安定したループ形成を可能にするため、高温強度
の高い金合金線であること。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a gold alloy wire for bonding that can simultaneously achieve the following objects (1) to (3). (1) A gold alloy wire that is hardly broken even when exposed to a severe thermal cycle environment when a loop is formed by performing a so-called reverse deformation by bending and deforming a ball neck portion severely to form a loop. thing. (2) With the demand for an increase in the number of electrodes, it is required to reduce the dimensions of the electrodes in order to arrange more electrodes, so that a small ball can be formed into a true sphere, and Gold alloy wire with high bonding strength. (3) A gold alloy wire having high high-temperature strength to enable stable loop formation.

【0006】[0006]

【課題を解決するための手段】本発明者等が鋭意研究を
重ねた結果、99.999重量%以上の高純度金に、イ
ットリウム(Y)、白金(Pt)、ランタン(La)、
銀(Ag)又はパラジウム(Pd)の少なくとも1種、
ベリリウム(Be)又はカルシウム(Ca)の少なくと
も1種を、夫々所定重量%含有させることにより、それ
ら各元素の相乗効果によって前述の目的(1)〜(3)
を同時に達成し得ることを知見し、本発明を完成するに
至った。すなわち本発明は、イットリウム(Y):0.
0001〜0.01重量%、白金(Pt):0.000
2〜0.2重量%、ランタン(La):0.0001〜
0.01重量%、銀(Ag)又はパラジウム(Pd)の
少なくとも1種:0.0002〜0.2重量%、ベリリ
ウム(Be):0.0001〜0.002重量%又はカ
ルシウム(Ca):0.0001〜0.01重量%の少
なくとも1種、及び、残部が99.999重量%以上の
高純度金と不可避不純物からなる組成としたリバース変
形して用いる半導体素子ボンディング用金合金線であ
る。ここで、リバース変形とは、ボンディング装置を用
いてループを形成する過程で、ループ形成と逆方向へボ
ールネック部を過酷に屈曲させて変形させることであ
る。このようなリバース変形を行った後にループを張る
ことで、ループ高さとループ形状を安定化させることが
出来るが、従来のボンディング用金合金線について、リ
バース変形を行って形成されたループは、半導体装置の
作動段階で半導体の発熱に伴う熱サイクルの環境に晒さ
れた場合、ボールネック部に断線不良が発生するという
問題がある。本発明は前述の合金組成とすることで、リ
バース変形を行ってボールネック部を過酷に屈曲,変形
させて形成したループが、過酷な熱サイクル環境に晒し
た場合でも、ボールネック部での断線の少ないものとし
得る半導体素子ボンディング用金合金線とすることが出
来る。
Means for Solving the Problems As a result of intensive studies conducted by the present inventors, yttrium (Y), platinum (Pt), lanthanum (La), yttrium (Y), platinum (Pt),
At least one of silver (Ag) and palladium (Pd),
By containing at least one of beryllium (Be) and calcium (Ca) in a predetermined weight%, the above-mentioned objects (1) to (3) can be achieved by a synergistic effect of these elements.
Were found to be achieved at the same time, and the present invention was completed. That is, the present invention provides yttrium (Y): 0.
0001-0.01% by weight, platinum (Pt): 0.000
2 to 0.2% by weight, lanthanum (La): 0.0001 to
0.01% by weight of silver (Ag) or palladium (Pd)
At least one of 0.0002 to 0.2% by weight, beryllium (Be): 0.0001 to 0.002% by weight or calcium (Ca): 0.0001 to 0.01% by weight, and This is a gold alloy wire for semiconductor element bonding that is used in a reverse deformation and has a composition of 99.999% by weight or more of high-purity gold and unavoidable impurities. Here, the reverse deformation means that in the process of forming a loop using a bonding apparatus, the ball neck portion is severely bent and deformed in a direction opposite to the loop formation. By forming a loop after performing such a reverse deformation, the loop height and the loop shape can be stabilized, but the loop formed by performing the reverse deformation on the conventional bonding gold alloy wire is a semiconductor. If the semiconductor device is exposed to an environment of a heat cycle caused by heat generation of the semiconductor in an operation stage of the apparatus, there is a problem that a disconnection failure occurs in a ball neck portion. According to the present invention, the loop formed by performing the reverse deformation and severely bending and deforming the ball neck portion by using the above-described alloy composition can be disconnected at the ball neck portion even when exposed to a severe thermal cycle environment. And a gold alloy wire for semiconductor element bonding which can be reduced.

【0007】[0007]

【作用】以下、本発明の詳細な構成とその作用について
説明する。本発明で使用する出発原料は、純度が99.
999重量%以上の金を含有し残部が不可避不純物から
なるものである。金の純度が99.999重量%未満の
場合は、その含有する不純物の影響を受けて過酷な熱サ
イクル環境の下で断線の少ない金合金線をうることはで
きない。また本発明においては前記出発原料に、 (1)Y:0.0001〜0.01重量% (2)Pt:0.0002〜0.2重量% (3)La:0.0001〜0.01重量% (4)Ag,Pdの少なくとも1種:0.0002〜
0.2重量% を含有した組成にすることにより、それら金属元素同士
の相乗効果によって、ボールネック部を過酷に屈曲,変
形させてループを張った後においても過酷な熱サイクル
環境下での断線が少なく、且つ小さいボールが真球に形
成可能となり、さらに接続強度が高い金合金線を得るこ
とができる。
The detailed configuration of the present invention and its operation will be described below. The starting material used in the present invention has a purity of 99.
It contains 999% by weight or more of gold and the balance is made of unavoidable impurities. When the purity of gold is less than 99.999% by weight, it is not possible to obtain a gold alloy wire with little disconnection under a severe thermal cycle environment due to the impurities contained therein. In the present invention, (1) Y: 0.0001 to 0.01% by weight (2) Pt: 0.0002 to 0.2% by weight (3) La: 0.0001 to 0.01 % By weight (4) At least one of Ag and Pd: 0.0002 to
By making the composition containing 0.2% by weight, the synergistic effect of the metal elements causes the ball neck to be severely bent and deformed, and even after the loop is stretched, the wire breaks in a severe thermal cycle environment. And a small ball can be formed into a true sphere, and a gold alloy wire having higher connection strength can be obtained.

【0008】Y、Pt、La、及び、Ag又はPdの少
なくとも1種を含有しても、Yが1ppm未満では熱サ
イクル試験での断線の低減効果は得られない。またYが
100ppmを超えるとボールに引け巣が発生して接合
強度が低下する。この為、Y含有量は1〜100ppm
であることが必要である。より好ましいY含有量は1〜
30ppmであり、この範囲の時、熱サイクル試験での
断線の低減効果は更に向上する。
[0008] Even if at least one of Y, Pt, La, and Ag or Pd is contained, if Y is less than 1 ppm, the effect of reducing the disconnection in the heat cycle test cannot be obtained. On the other hand, when Y exceeds 100 ppm, shrinkage cavities occur in the ball, and the bonding strength is reduced. Therefore, the Y content is 1 to 100 ppm
It is necessary to be. More preferable Y content is 1 to
At 30 ppm, the effect of reducing the disconnection in the thermal cycle test is further improved.

【0009】Y、Pt、La、及び、Ag又はPdの少
なくとも1種を含有しても、Ptが2ppm未満では熱
サイクル試験での断線の低減効果は得られないと共に、
小さいボールの真球度が得られない。またPtが200
0ppmを超えるとボールが硬くなって圧着時に電極が
割れてしまうというトラブルを生じる。この為、Pt含
有量は2〜2000ppmであることが必要である。よ
り好ましいPt含有量は2〜10ppmであり、この範
囲の時、熱サイクル試験での断線の低減効果は更に向上
する。
Even if at least one of Y, Pt, La, and Ag or Pd is contained, if Pt is less than 2 ppm, the effect of reducing the disconnection in the heat cycle test cannot be obtained, and
The sphericity of a small ball cannot be obtained. Pt is 200
If it exceeds 0 ppm, the ball becomes hard and a problem occurs that the electrode is broken at the time of pressure bonding. For this reason, the Pt content needs to be 2 to 2000 ppm. The more preferable Pt content is 2 to 10 ppm, and in this range, the effect of reducing disconnection in a heat cycle test is further improved.

【0010】Y、Pt、La、及び、Ag又はPdの少
なくとも1種を含有しても、Laが1ppm未満では熱
サイクル試験での断線の低減効果は得られない。またL
aが100ppmを超えるとボールに引け巣が発生して
接合強度が低下する。この為、La含有量は1〜100
ppmであることが必要である。より好ましいLa含有
量は1〜50ppmであり、この範囲の時、熱サイクル
試験での断線の低減効果は更に向上する。
[0010] Even if at least one of Y, Pt, La, and Ag or Pd is contained, if La is less than 1 ppm, the effect of reducing the disconnection in the heat cycle test cannot be obtained. Also L
If a exceeds 100 ppm, shrinkage cavities occur in the ball, and the bonding strength decreases. Therefore, the La content is 1 to 100.
ppm. The more preferable La content is 1 to 50 ppm, and in this range, the effect of reducing disconnection in a heat cycle test is further improved.

【0011】Y、Pt、La、及び、Ag又はPdの少
なくとも1種を含有しても、Ag又はPdの少なくとも
1種が2ppm未満では熱サイクル試験での断線の低減
効果は得られないと共に、小さいボールの真球度が得ら
れない。またAg又はPdの少なくとも1種が2000
ppmを超えるとボールが硬くなって圧着時に電極が割
れてしまうというトラブルを生じる。この為、Ag又は
Pdの少なくとも1種の含有量は2〜2000ppmで
あることが必要である。より好ましいAg又はPdの少
なくとも1種の含有量は2〜20ppmであり、この範
囲の時、熱サイクル試験での断線の低減効果は更に向上
する。
Even if at least one of Y, Pt, La, and Ag or Pd is contained, if at least one of Ag or Pd is less than 2 ppm, the effect of reducing the disconnection in the heat cycle test cannot be obtained, The sphericity of a small ball cannot be obtained. Also, at least one of Ag and Pd is 2,000
When the content exceeds ppm, the ball becomes hard and a problem occurs that the electrode is broken at the time of pressure bonding. Therefore, the content of at least one of Ag and Pd needs to be 2 to 2000 ppm. More preferably, the content of at least one of Ag and Pd is 2 to 20 ppm, and in this range, the effect of reducing disconnection in a heat cycle test is further improved.

【0012】さらに本発明においては、上記組成にBe
又はCaの少なくともを1種を所定量含有させるが、B
e又はCaは高温強度を上げて安定したループ形成を可
能にすると共に、ボンディング時の接合強度の向上に効
果がある。Be,Caの何れも1ppm未満では高温強
度向上の効果は小さい。またBeが20ppmを超える
とボール表面の酸化が進行して接合強度が低下する。ま
たCaが100ppmを超えるとボールが硬くなって圧
着時に電極が割れてしまうというトラブルを生じる。こ
の為、Be又はCaの少なくとも1種は、Beが1〜2
0ppm、Caが1〜100ppmであることが必要で
ある。より好ましくはBe含有量が1〜10ppm、C
a含有量が1〜40ppmであり、この範囲の時、高温
強度は更に向上する。
Further, in the present invention, Be is added to the above composition.
Alternatively, at least one of Ca is contained in a predetermined amount.
e or Ca increases the high-temperature strength, enables stable loop formation, and is effective in improving the bonding strength during bonding. If both Be and Ca are less than 1 ppm, the effect of improving the high-temperature strength is small. On the other hand, if Be exceeds 20 ppm, oxidation of the ball surface proceeds, and the bonding strength decreases. On the other hand, if Ca exceeds 100 ppm, the ball becomes hard and a problem occurs that the electrode is broken at the time of pressure bonding. Therefore, at least one of Be and Ca has Be of 1 to 2
It is necessary that 0 ppm and Ca are 1 to 100 ppm. More preferably, the Be content is 1 to 10 ppm,
When the content of a is 1 to 40 ppm, and in this range, the high temperature strength is further improved.

【0013】[0013]

【実施例】【Example】

(実施例1)表1に示す組成と成るように99.999
重量%の金地金と各元素を含む母合金を真空溶解炉で溶
解,鋳造し、溝ロール,伸線機を用いた冷間加工と熱処
理を繰り返し,最終線径30μm、伸び率4%の細線に
なるように仕上げた。この仕上げ材を用いて接合強さ、
高温強さ、ボール形状、接合時の電極割れ、熱サイクル
後のボールネック部の破断試験を行った。結果を表2に
示す。
(Example 1) 99.999 to obtain the composition shown in Table 1.
In a vacuum melting furnace, a metal alloy containing 10% by weight of metal and each element is melted and cast, and cold working and heat treatment using a groove roll and a wire drawing machine are repeated to obtain a fine wire having a final wire diameter of 30 μm and an elongation of 4%. Finished to be. Bonding strength using this finishing material,
High temperature strength, ball shape, electrode cracking at the time of bonding, and a fracture test of the ball neck after thermal cycling were performed. Table 2 shows the results.

【0014】(実施例2〜22/比較例1〜15)表1
に示す組成としたこと以外は実施例1と同様にして細線
に仕上げ、試験を行った。結果を表2に示す。
(Examples 2 to 22 / Comparative Examples 1 to 15) Table 1
Except that the composition was as shown in Example 1, and the test was performed in the same manner as in Example 1. Table 2 shows the results.

【0015】測定方法は以下の通りである。 [接合強さ]高速自動ボンダーを用いてボンディングを
行った後、ボンディング強度試験装置(シェアーテスタ
ー)を用いて測定したボール圧着部とAl電極部との剪
断荷重を表示した。
The measuring method is as follows. [Joining Strength] After bonding was performed using a high-speed automatic bonder, the shear load between the ball crimping portion and the Al electrode portion measured using a bonding strength tester (shear tester) was displayed.

【0016】[高温強さ]引張試験機(テンシロンUT
M−II)を用いて250℃の雰囲気で20秒保持した後
そのまま引張試験を行い、その最大荷重を表示した。
[High temperature strength] Tensile tester (Tensilon UT)
After holding for 20 seconds in an atmosphere of 250 ° C. using M-II), a tensile test was performed as it was, and the maximum load was indicated.

【0017】[ボール形状]高速自動ボンダーに組み込
まれている電気トーチを用いて金ボールを作成し、走査
型電子顕微鏡を用いて金ボールの大きさ、真球度、表面
状態を観察した。金ボールの大きさは線径の2.5倍、
即ち75μmφを基準とし、真球度、表面状態は比較サ
ンプル対比で測定した。10個測定して全て良好な時は
「良好」、1個でも不良がある時は「不良」と評価し
た。
[Ball Shape] A gold ball was prepared using an electric torch incorporated in a high-speed automatic bonder, and the size, sphericity, and surface state of the gold ball were observed using a scanning electron microscope. The size of the gold ball is 2.5 times the wire diameter,
That is, the sphericity and the surface state were measured in comparison with a comparative sample based on 75 μmφ. Ten samples were evaluated as “good” when all were good and “bad” when there was even one defect.

【0018】[接合時の電極割れ]高速自動ボンダーを
用いて100個のボンディングテストを行い、電極割れ
不良の発生がないものを「○」、1個でも割れ不良の発
生があるものを「×」で表示した。
[Electrode cracking at the time of bonding] A 100-piece bonding test was performed using a high-speed automatic bonder. ".

【0019】[熱サイクル後のボールネック部の破断
率]高速自動ボンダーで最初のボール接合を行った後、
ループ形成と逆方向にキャピラリーを一旦動かしそのリ
バース角度を垂直方向に対して60度に設定し、ボール
ネック部を過酷に屈曲させて変形させ次いで正規のルー
プを形成した。更にボールネック部をエポキシ樹脂にて
封止した後、−10℃×30分と150℃×30分の熱
サイクルテストを2000回行った。100個の試料を測定
に供し、導通テストにより断線の有無を確認した。断線
した個数を破断率(%)で表示した。
[Break rate of ball neck after thermal cycle] After the first ball bonding with a high-speed automatic bonder,
The capillary was once moved in the direction opposite to the loop formation, the reverse angle was set to 60 degrees with respect to the vertical direction, the ball neck was severely bent and deformed, and then a regular loop was formed. Further, after the ball neck portion was sealed with an epoxy resin, a thermal cycle test was performed 2000 times at -10 ° C for 30 minutes and at 150 ° C for 30 minutes. One hundred samples were subjected to measurement, and the presence or absence of disconnection was confirmed by a continuity test. The number of broken wires was indicated by a breaking rate (%).

【0020】[0020]

【表1】 [Table 1]

【0021】[0021]

【表2】 [Table 2]

【0022】表1,表2から明らかなように、Y、P
t、La、Ag又はPdの少なくとも1種、Be又はC
aの少なくとも1種を、夫々前述の範囲内含有した本発
明実施例1〜22は、ボール圧着部と電極部との接合強
さが52.1g以上、引張試験による高温強さが15.
0g以上であると共に、金ボールの大きさ(小さいボー
ルの成形),真球度,ボール表面状態の点で全て良好で
あり、しかもボンディング時の電極割れ不良の発生がな
く、且つリバース変形を行ってループを形成した後に過
酷な熱サイクル環境に晒された場合でも断線回数が1回
以下と良好であることが判る。
As apparent from Tables 1 and 2, Y, P
at least one of t, La, Ag or Pd, Be or C
a of the invention examples 1 to 22 containing at least one of them in the above-mentioned ranges, the bonding strength between the ball crimping portion and the electrode portion is 52.1 g or more, and the high-temperature strength in a tensile test is 15.2 g.
0 g or more, and the gold ball size (small ball molding), sphericity, and ball surface condition are all good, and there is no occurrence of electrode cracking failure during bonding and reverse deformation is performed. It can be seen that the number of disconnections is as good as 1 or less even when exposed to a severe thermal cycle environment after forming a loop.

【0023】さらに、Y:0.0001〜0.003重
量%、Pt:0.0002〜0.001重量%、La:
0.0001〜0.005重量%、Ag又はPdの少な
くとも1種:0.0002〜0.002重量%、Be
0.0001〜0.001重量%又はCa0.0001
〜0.004重量%の少なくとも1種を含有した実施例
1,2,4,6,8,9,11,12,14〜16,1
8〜20,22においては、前述の効果に加えて、リバ
ース変形を行ってループを形成した後に過酷な熱サイク
ル環境に晒された場合でも断線回数が0回と極めて良好
であることが判る。
Further, Y: 0.0001 to 0.003% by weight, Pt: 0.0002 to 0.001% by weight, La:
0.0001 to 0.005% by weight, at least one of Ag and Pd: 0.0002 to 0.002% by weight, Be
0.0001 to 0.001% by weight or Ca 0.0001
Examples 1,2,4,6,8,9,11,12,14-16,1 containing at least one of 0.004% by weight.
8 to 20 and 22, in addition to the above-described effects, even when exposed to a severe thermal cycle environment after performing a reverse deformation to form a loop, the number of disconnections is extremely good at zero.

【0024】これに対し、Yを含有しない比較例1、L
aを含有しない比較例5においては、リバース変形を行
ってループを形成した後に過酷な熱サイクル環境に晒さ
れた場合、断線回数が7回以上であることが判る。
On the other hand, Comparative Example 1 containing no Y, L
In Comparative Example 5 containing no a, it is found that the number of disconnections is 7 or more when exposed to a severe thermal cycle environment after forming a loop by performing reverse deformation.

【0025】また、Yの含有量が0.01重量%を越え
る比較例2、Laの含有量が0.01を越える比較例
6、Beの含有量が0.002を越える比較例8におい
ては、ボール圧着部と電極部との接合強さが37.2g
以下であることが判る。
In Comparative Example 2 in which the content of Y exceeds 0.01% by weight, Comparative Example 6 in which the content of La exceeds 0.01, and Comparative Example 8 in which the content of Be exceeds 0.002, The joint strength between the ball crimping part and the electrode part is 37.2 g
It can be seen that:

【0026】また、Ptの含有量が0.2重量%を越え
る比較例4、Caの含有量が0.01重量%を越える比
較例9、Ag又はPdの含有量が0.2重量%を越える
比較例11,比較例12においては、ボンディング時の
電極割れ不良の発生があることが判る。
Comparative Example 4 in which the Pt content exceeds 0.2% by weight, Comparative Example 9 in which the Ca content exceeds 0.01% by weight, and Ag or Pd content of 0.2% by weight. In Comparative Examples 11 and 12, which exceed the above, it can be seen that there is an electrode cracking defect during bonding.

【0027】Be又はCaの何れも含有しない比較例7
においては、引張試験による高温強さが11.3gであ
ることが判る。
Comparative Example 7 containing neither Be nor Ca
It can be seen that the high-temperature strength in the tensile test was 11.3 g.

【0028】Ptに代えてGaを含有すると共に、Ag
又はPdの何れも含有しない比較例13においては、ボ
ール形状が不良であることが判る。
In addition to containing Ga instead of Pt, Ag
In Comparative Example 13 containing neither Pd nor Pd, the ball shape was found to be defective.

【0029】Ptを含有しない比較例3、Ag又はPd
の何れも含有しない比較例10においては、ボール形状
が不良であると共に、リバース変形を行ってループを形
成した後に過酷な熱サイクル環境に晒された場合の断線
回数が6回以上であることが判る。
Comparative Example 3 containing no Pt, Ag or Pd
In Comparative Example 10 which does not contain any of the above, the ball shape is poor, and the number of disconnections when exposed to a severe thermal cycle environment after forming a loop by performing reverse deformation may be 6 times or more. I understand.

【0030】Ptに代えてAlを含有すると共にAg又
はPdの何れも含有しない比較例14においては、ボー
ル形状が不良であると共に、リバース変形を行ってルー
プを形成した後に過酷な熱サイクル環境に晒された場合
の断線回数が12回であることが判る。
In Comparative Example 14 containing Al instead of Pt and containing neither Ag nor Pd, the ball shape was poor, and the ball was subjected to a reverse deformation to form a loop and then subjected to a severe heat cycle environment. It can be seen that the number of disconnections when exposed is twelve.

【0031】Laに代えてInを含有した比較例15に
おいては、ボール圧着部と電極部との接合強さが37.
4gであると共に、ボール形状が不良であることが判
る。
In Comparative Example 15 containing In instead of La, the bonding strength between the ball crimping portion and the electrode portion was 37.
It can be seen that the weight is 4 g and the ball shape is defective.

【0032】[0032]

【発明の効果】以上説明したように本発明は、99.9
99重量%以上の高純度金に、Y、Pt、La、Ag又
はPdの少なくとも1種、Be又はCaの少なくとも1
種を、夫々所定量含有させたことを特徴とするボンディ
ング用金合金線としたので、リバース変形を行って形成
したループを過酷な熱サイクル環境に晒した場合でも断
線が少ないことから多数のリード線を用いながら短く配
線を行うことが可能であり、且つ、小さいボールが真球
に形成可能であると共にボンディング時の接合強度が高
いことからより多くの電極を配置することが可能であ
り、しかも高温強度に優れることから安定したループ形
成を可能にするという利点を同時に達成することができ
る。従って、半導体装置の高速化,高機能化,小型化,
薄型化を促進するに極めて有用なボンディング用金合金
線を提供することができた。
As described above, the present invention provides 99.9
99% by weight or more of high purity gold, at least one of Y, Pt, La, Ag or Pd, and at least one of Be or Ca
Since the gold alloy wire for bonding is characterized by containing a predetermined amount of each species, even if the loop formed by performing reverse deformation is exposed to severe thermal cycle environment, there are few disconnections, so many leads It is possible to perform short wiring using wires, and since a small ball can be formed into a true sphere and the bonding strength at the time of bonding is high, it is possible to arrange more electrodes, and The advantage of being able to form a stable loop because of its excellent high-temperature strength can be achieved at the same time. Therefore, high speed, high performance, miniaturization,
A gold alloy wire for bonding, which is extremely useful for promoting thinning, can be provided.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平6−112259(JP,A) 特開 平5−179375(JP,A) 特開 平4−38840(JP,A) 特開 昭62−290836(JP,A) 特開 昭54−98174(JP,A) 特開 平2−259032(JP,A) 二瓶公志、早川征男、宮代文夫 編, 半導体実装技術ハンドブック,日本,株 式会社サイエンスフォーラム,1986年9 月25日,P.61−64 (58)調査した分野(Int.Cl.7,DB名) C22C 5/02 H01L 21/60 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-6-112259 (JP, A) JP-A-5-179375 (JP, A) JP-A-4-38840 (JP, A) JP-A-62-162 290836 (JP, A) JP-A-54-98174 (JP, A) JP-A-2-259032 (JP, A) Ed. Koji Nihei, Seio Hayakawa, Fumio Miyashiro, Semiconductor Packaging Technology Handbook, Science Forum Japan, Inc. , September 25, 1986, p. 61-64 (58) Field surveyed (Int. Cl. 7 , DB name) C22C 5/02 H01L 21/60

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 イットリウム(Y):0.0001〜
0.01重量%、白金(Pt):0.0002〜0.2
重量%、ランタン(La):0.0001〜0.01重
量%、銀(Ag)又はパラジウム(Pd)の少なくとも
1種:0.0002〜0.2重量%、ベリリウム(B
e):0.0001〜0.002重量%又はカルシウム
(Ca):0.0001〜0.01重量%の少なくとも
1種、及び、残部が99.999重量%以上の高純度金
と不可避不純物からなる組成としたことを特徴とするリ
バース変形して用いる半導体素子ボンディング用金合金
線。
1. Yttrium (Y): 0.0001-
0.01% by weight, platinum (Pt): 0.0002 to 0.2
% By weight, lanthanum (La): 0.0001 to 0.01% by weight , at least silver (Ag) or palladium (Pd)
1 type: 0.0002 to 0.2% by weight, beryllium (B
e): at least one of 0.0001 to 0.002% by weight or calcium (Ca): 0.0001 to 0.01% by weight, and the balance is from 99.999% by weight or more of high-purity gold and inevitable impurities. What is claimed is: 1. A gold alloy wire for bonding a semiconductor element, which is reversely deformed and used.
JP09657394A 1994-05-10 1994-05-10 Gold alloy wire for bonding Expired - Lifetime JP3312348B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP09657394A JP3312348B2 (en) 1994-05-10 1994-05-10 Gold alloy wire for bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09657394A JP3312348B2 (en) 1994-05-10 1994-05-10 Gold alloy wire for bonding

Publications (2)

Publication Number Publication Date
JPH07305126A JPH07305126A (en) 1995-11-21
JP3312348B2 true JP3312348B2 (en) 2002-08-05

Family

ID=14168741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09657394A Expired - Lifetime JP3312348B2 (en) 1994-05-10 1994-05-10 Gold alloy wire for bonding

Country Status (1)

Country Link
JP (1) JP3312348B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
KR20000049783A (en) * 2000-04-29 2000-08-05 고일억 Manufactuing process gold bonding wire and targets material of semiconductor
JP4726205B2 (en) * 2005-06-14 2011-07-20 田中電子工業株式会社 Gold alloy wire for bonding wire with high initial bondability, high bond reliability, high roundness of crimped ball, high straightness and high resin flow resistance

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
二瓶公志、早川征男、宮代文夫 編,半導体実装技術ハンドブック,日本,株式会社サイエンスフォーラム,1986年9月25日,P.61−64

Also Published As

Publication number Publication date
JPH07305126A (en) 1995-11-21

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