JPH08316262A - Gold wire for bonding - Google Patents

Gold wire for bonding

Info

Publication number
JPH08316262A
JPH08316262A JP7118522A JP11852295A JPH08316262A JP H08316262 A JPH08316262 A JP H08316262A JP 7118522 A JP7118522 A JP 7118522A JP 11852295 A JP11852295 A JP 11852295A JP H08316262 A JPH08316262 A JP H08316262A
Authority
JP
Japan
Prior art keywords
weight
group
bonding
gold
neck portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7118522A
Other languages
Japanese (ja)
Inventor
Yoshito Yamamoto
義人 山本
Shinichi Hanada
信一 花田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP7118522A priority Critical patent/JPH08316262A/en
Publication of JPH08316262A publication Critical patent/JPH08316262A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0107Ytterbium [Yb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012Semiconductor purity grades
    • H01L2924/012055N purity grades, i.e. 99.999%
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To provide a gold wire, for IC-chip bonding, which is hard to disconnect even when a thermocompression bonding operation is performed jointly by using ultrasonic waves with an increased ultrasonic output and even when a loop is formed by a reverse deformation operation which extremely bends and deforms a ball neck part. CONSTITUTION: Gold of 99.999wt.% or higher purity contains 0.0001 to 0.005wt.% Pt, 0.0001 to 0.005wt.% Ag and 0.00005 to 0.005wt.% Yb.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ICチップの電極と外
部リード部を接続するために使用するボンディング用金
線に関し、さらに詳しくは、半導体装置組み立ての際、
超音波出力の増加等によってボンディングワイヤのネッ
ク部が損傷を受ける程度を大幅に低減することができる
ICチップボンディング用金線に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding gold wire used for connecting an electrode of an IC chip and an external lead portion, and more specifically, when assembling a semiconductor device.
The present invention relates to a gold wire for IC chip bonding, which can significantly reduce the extent to which the neck portion of the bonding wire is damaged due to an increase in ultrasonic output.

【0002】[0002]

【従来の技術とその問題点】従来、ICチップ上の電極
と外部リード部を接続する技術としては、金線を用いた
超音波併用熱圧着ボンディング法が主として用いられて
いる。また、最近の半導体装置の高速化,高機能化の要
求に伴って電極と外部リード部の数が増加した結果、電
極から外部リード部迄の配線距離が長くなっている。一
方では、半導体装置を小型,薄型にするため、電極と外
部リード部の配線距離を極端に短くすることによって対
応している。この為、多数のリード線を用いながら短く
配線を行うことが要求され、これに対応するために、ボ
ンディング装置を用いてループを形成する過程で、ルー
プ形成と逆方向へボールネック部を過酷に屈曲させて変
形させた後にループを張る、所謂リバース変形を行うこ
とによって、ループ高さとループ形状を安定化させる試
みがなされている。
2. Description of the Related Art Conventionally, as a technique for connecting an electrode on an IC chip and an external lead portion, an ultrasonic combined thermocompression bonding method using a gold wire has been mainly used. Further, as the number of electrodes and external lead portions has increased with the recent demand for higher speed and higher functionality of semiconductor devices, the wiring distance from the electrodes to the external lead portions has become longer. On the other hand, in order to make the semiconductor device small and thin, the wiring distance between the electrode and the external lead portion is extremely shortened. For this reason, it is required to perform short wiring while using a large number of lead wires, and in order to cope with this, in the process of forming a loop using a bonding device, the ball neck portion is severed in the opposite direction to the loop formation. Attempts have been made to stabilize the loop height and loop shape by performing so-called reverse deformation in which the loop is stretched after being bent and deformed.

【0003】しかし乍ら前述の様なリバース変形を行っ
て形成されたループは、半導体装置の作動段階で半導体
の発熱に伴う熱サイクルの環境に晒された場合、ボール
ネック部に断線不良が発生するという問題が生じてい
た。この様な半導体作動中の断線不良を防止するため
に、ボールネック部を過酷に屈曲,変形させてループを
張った場合、その後の過酷な熱サイクル試験において断
線が生じることの少ない金線が要求されている。
However, the loop formed by performing the reverse deformation as described above, when exposed to the thermal cycle environment associated with the heat generation of the semiconductor in the operation stage of the semiconductor device, has a disconnection defect in the ball neck portion. There was a problem of doing. In order to prevent such disconnection failure during semiconductor operation, when a ball neck is severely bent and deformed to form a loop, a gold wire that is less likely to be disconnected in the subsequent severe thermal cycle test is required. Has been done.

【0004】他方、従来において、振動により金ボール
直上のネック部が破断するという問題を改善することを
目的として、Eu、Ca、Ge、Beを所定量含有させ
たものがある(特開平5−9624号)。しかし乍ら上
記従来の提案は、ボンディングワイヤーをボールネック
部で過酷に屈曲,変形させてループを張った後に過酷な
熱サイクル環境に晒された場合でも、ボールネック部で
の断線の少ない金線として十分なものとはいえない状態
にある。
On the other hand, in the related art, for the purpose of improving the problem that the neck portion just above the gold ball is broken by vibration, there is a material containing a predetermined amount of Eu, Ca, Ge, and Be (Japanese Patent Laid-Open No. Hei. 9624). However, the above-mentioned conventional proposal is such that even if the bonding wire is exposed to a severe thermal cycle environment after being bent and deformed severely at the ball neck portion to form a loop, the gold wire is less likely to be broken at the ball neck portion. It is in a state where it cannot be said that it is enough.

【0005】[0005]

【発明が解決しようとする課題】本発明は上述したよう
な従来事情に鑑みて成されたものであり、その目的とす
るところは、超音波出力を増大させた超音波併用熱圧着
ボンディングを行い、且つボールネック部を過酷に屈
曲,変形させてループを張る、所謂リバース変形を行っ
てループを形成した後に過酷な熱サイクル環境に晒され
ても断線が生じることの少ないICチップボンディング
用金線を提供することである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional circumstances, and an object of the present invention is to perform ultrasonic thermocompression bonding with an increased ultrasonic output. Also, the gold wire for IC chip bonding is less likely to be broken even if exposed to a harsh thermal cycle environment after forming a loop by performing so-called reverse deformation in which the ball neck is severely bent and deformed to form a loop. Is to provide.

【0006】[0006]

【課題を解決するための手段】本発明者等が鋭意研究を
重ねた結果、99.999重量%以上の高純度金に、白
金(Pt)、銀(Ag)、イッテルビウム(Yb)を夫
々所定量含有させることにより、それら各元素の相乗効
果によって前述の目的を達成し得ることを知見し、本発
明を完成するに至った。すなわち本願第1発明は、9
9.999重量%以上の高純度金に、白金(Pt):
0.0001〜0.005重量%、銀(Ag):0.0
001〜0.005重量%及びイッテルビウム(Y
b):0.00005〜0.005重量%を含有するこ
とを特徴とするICチップボンディング用金線である。
Means for Solving the Problems As a result of intensive studies conducted by the present inventors, 99.999% by weight or more of high-purity gold was mixed with platinum (Pt), silver (Ag), and ytterbium (Yb). It has been found that the above-mentioned objects can be achieved by the synergistic effect of each of these elements by containing in a fixed amount, and the present invention has been completed. That is, the first invention of the present application is
9.999% by weight or more of high-purity gold, platinum (Pt):
0.0001 to 0.005% by weight, silver (Ag): 0.0
001 to 0.005% by weight and ytterbium (Y
b): A gold wire for IC chip bonding, containing 0.00005 to 0.005% by weight.

【0007】また本願第2発明は、上記第1発明に、ベ
リリウム(Be):0.00002〜0.001重量
%,カルシウム(Ca):0.00005〜0.01重
量%,ゲルマニウム(Ge):0.0001〜0.01
重量%の内少なくとも1種をさらに含有することを特徴
とするICチップボンディング用金線である。
The second invention of the present application is the same as the first invention, except that beryllium (Be): 0.00002 to 0.001% by weight, calcium (Ca): 0.00005 to 0.01% by weight, germanium (Ge). : 0.0001 to 0.01
It is a gold wire for IC chip bonding, which further contains at least one of weight%.

【0008】さらに本願第3発明は、上記第1発明又は
第2発明に、ユウロピウム(Eu),イットリウム
(Y),ランタン(La),鉛(Pb),エルビウム
(Er),カドリニウム(Gd),セリウム(Ce),
プラセオジム(Pr),ネオジム(Nd),サマリウム
(Sm)の内少なくとも1種を0.0001〜0.02
重量%さらに含有することを特徴とするICチップボン
ディング用金線である。
Furthermore, a third invention of the present application is the same as the first or second invention, except that europium (Eu), yttrium (Y), lanthanum (La), lead (Pb), erbium (Er), cadolinium (Gd), Cerium (Ce),
At least one of praseodymium (Pr), neodymium (Nd), and samarium (Sm) is 0.0001 to 0.02.
The gold wire for IC chip bonding is characterized by further containing wt%.

【0009】[0009]

【作用】前述の通り本発明は、所定量のPt、Ag及び
Ybを各々必須とする第1群、所定量のBe,Ca,G
eの内少なくとも1種からなる第2群、Eu,Y,L
a,Pb,Er,Gd,Ce,Pr,Nd,Smの内少
なくとも1種の所定量からなる第3群の成分を含有した
組成となっている。以下、本発明の詳細な構成とその作
用について説明する。本発明で使用する出発原料は、純
度が99.999重量%以上の金を含有し残部が不可避
不純物からなるものである。該出発原料にPt、Ag、
Ybを上記構成になるよう含有した組成にすることによ
り、それら金属元素同士の相乗効果によって、超音波出
力を増大させた超音波併用熱圧着ボンディングを行い、
且つループ形成の際にリバース変形を加えたボンディン
グワイヤのネック部の信頼性において、疲労特性に優
れ、熱サイクルの環境に晒された場合の破断性能に優れ
た金合金線を得ることが出来る。次に、本発明の金合金
線の成分組成を上記の通り限定した理由を説明する。
As described above, according to the present invention, the first group in which a predetermined amount of Pt, Ag, and Yb are essential and a predetermined amount of Be, Ca, and G are used.
a second group consisting of at least one of e, Eu, Y, L
It has a composition containing a third group of components in a predetermined amount of at least one of a, Pb, Er, Gd, Ce, Pr, Nd and Sm. The detailed configuration of the present invention and its operation will be described below. The starting material used in the present invention contains gold with a purity of 99.999% by weight or more, and the balance is inevitable impurities. Pt, Ag,
By using a composition containing Yb so as to have the above-mentioned constitution, the combined use of ultrasonic waves makes it possible to perform thermocompression bonding with ultrasonic waves by increasing the ultrasonic output.
In addition, it is possible to obtain a gold alloy wire having excellent fatigue characteristics in terms of reliability of the neck portion of the bonding wire that has undergone reverse deformation when forming a loop and excellent breaking performance when exposed to a heat cycle environment. Next, the reason why the composition of the gold alloy wire of the present invention is limited as described above will be explained.

【0010】〔第1群;Pt〕Ptは、Ag、Ybとの
共存において、ボールネック部の信頼性向上に優れた効
果を示す。Pt含有量が0.0001重量%以上になる
と0.0001重量%未満と対比してボールネック部の
信頼性が大きくなり、0.005重量%を越えると良好
なボール形成が出来なくなってくる。このためPt含有
量を0.0001〜0.005重量%と定めた。Ptを
前記規定量含有してもAg、Ybのいずれか1種が含有
されていない場合と対比して、Ag、Ybとの共存にお
いてボールネック部の信頼性が向上するためPtはA
g、Ybとの共存が必要である。さらに好ましい組成
は、所定量のBe,Ca,Geの内少なくとも1種を含
有させることであり、この組成において、ボールネック
部の信頼性向上にさらに優れた効果を示す。
[First group; Pt] Pt exhibits an excellent effect of improving the reliability of the ball neck portion in the coexistence with Ag and Yb. When the Pt content is 0.0001% by weight or more, the reliability of the ball neck portion becomes large as compared with less than 0.0001% by weight, and when it exceeds 0.005% by weight, good ball formation cannot be achieved. Therefore, the Pt content is set to 0.0001 to 0.005% by weight. Compared with the case where any one of Ag and Yb is not contained even if the above specified amount of Pt is contained, the reliability of the ball neck portion is improved in the coexistence with Ag and Yb.
Coexistence with g and Yb is required. A more preferable composition is to contain at least one kind of Be, Ca and Ge in a predetermined amount, and this composition exhibits a further excellent effect in improving the reliability of the ball neck portion.

【0011】〔第1群;Ag〕Agは、Pt、Ybとの
共存において、ボールネック部の信頼性向上に優れた効
果を示す。Ag含有量が0.0001重量%以上になる
と0.0001重量%未満と対比してボールネック部の
信頼性が大きくなり、0.005重量%を越えると良好
なボール形成が出来なくなってくる。このためAg含有
量を0.0001〜0.005重量%と定めた。Agを
前記規定量含有してもPt、Ybのいずれか1種が含有
されていない場合と対比して、Pt、Ybとの共存にお
いてボールネック部の信頼性が向上するためAgはP
t、Ybとの共存が必要である。さらに好ましい組成
は、所定量のBe,Ca,Geの内少なくとも1種を含
有させることであり、この組成において、ボールネック
部の信頼性向上にさらに優れた効果を示す。
[First group; Ag] Ag, in the coexistence with Pt and Yb, exhibits an excellent effect of improving the reliability of the ball neck portion. When the Ag content is 0.0001% by weight or more, the reliability of the ball neck portion becomes large as compared with less than 0.0001% by weight, and when it exceeds 0.005% by weight, good ball formation cannot be achieved. Therefore, the Ag content is set to 0.0001 to 0.005% by weight. In comparison with the case where any one of Pt and Yb is not contained even if the specified amount of Ag is contained, the reliability of the ball neck portion is improved in the coexistence with Pt and Yb, so that Ag is P
Coexistence with t and Yb is required. A more preferable composition is to contain at least one kind of Be, Ca and Ge in a predetermined amount, and this composition exhibits a further excellent effect in improving the reliability of the ball neck portion.

【0012】〔第1群;Yb〕Ybは、Pt、Agとの
共存において、ボールネック部の信頼性向上に優れた効
果を示す。Yb含有量が0.00005重量%以上にな
ると0.00005重量%未満と対比してボールネック
部の信頼性が大きくなり、0.0001重量%以上にな
ると該信頼性はさらに大きくなる。Yb含有量が0.0
05重量%を越えると良好なボール形成が出来なくなっ
てくると共に、ボンディング時にチップ電極に割れが生
じてくる。このためYb含有量を0.00005〜0.
005重量%と定めた。Ybを前記規定量含有してもP
t、Agのいずれか1種が含有されていない場合と対比
して、Pt、Agとの共存においてボールネック部の信
頼性が向上するためYbはPt、Agとの共存が必要で
ある。さらに好ましい組成は、所定量のBe,Ca,G
eの内少なくとも1種を含有させることであり、この組
成において、ボールネック部の信頼性向上にさらに優れ
た効果を示す。
[First group; Yb] Yb exhibits an excellent effect of improving the reliability of the ball neck portion in the coexistence with Pt and Ag. When the Yb content is 0.00005% by weight or more, the reliability of the ball neck portion becomes large as compared with less than 0.00005% by weight, and when the Yb content is 0.0001% by weight or more, the reliability is further increased. Yb content is 0.0
If it exceeds 05% by weight, good ball formation cannot be achieved and the chip electrode is cracked during bonding. Therefore, the Yb content is 0.00005 to 0.
It was determined to be 005% by weight. Even if Yb is included in the specified amount, P
In comparison with the case where any one of t and Ag is not contained, Yb needs to coexist with Pt and Ag because the reliability of the ball neck portion is improved in coexistence with Pt and Ag. A more preferable composition is a predetermined amount of Be, Ca, G
In this composition, at least one kind of e is added, and a more excellent effect in improving the reliability of the ball neck portion is exhibited.

【0013】〔第2群;Be,Ca,Ge〕Be含有量
が0.00002〜0.001重量%、Ca含有量が
0.00005〜0.01重量%、Ge含有量が0.0
001〜0.01重量%の内少なくとも1種の成分が、
Pt、Ag及びYbとの共存においてボールネック部の
信頼性向上にさらに優れた効果を示すため、好ましく用
いられる。Be含有量が0.00002重量%未満で且
つCa含有量が0.00005重量%未満で且つGe含
有量が0.0001重量%未満のとき、前記のようなさ
らに優れた効果は得られない。Be含有量が0.001
重量%を越えると良好なボール形成が出来なくなってく
る。Ca含有量が0.01重量%を越えると良好なボー
ル形成が出来なくなってくる。Ge含有量が0.01重
量%を越えるとボンディング時の電極割れが発生し易く
なる。このため、好ましく用いられるBeの含有量を
0.00002〜0.001重量%、Caの含有量を
0.00005〜0.01重量%、Geの含有量を0.
0001〜0.01重量%と定めた。
[Second group; Be, Ca, Ge] Be content is 0.00002 to 0.001% by weight, Ca content is 0.00005 to 0.01% by weight, and Ge content is 0.0.
001 to 0.01% by weight of at least one component,
Coexistence with Pt, Ag and Yb exhibits a more excellent effect in improving the reliability of the ball neck portion, and is therefore preferably used. When the Be content is less than 0.00002% by weight, the Ca content is less than 0.00005% by weight, and the Ge content is less than 0.0001% by weight, the above-mentioned more excellent effects cannot be obtained. Be content is 0.001
If it exceeds the weight%, good ball formation cannot be achieved. If the Ca content exceeds 0.01% by weight, good ball formation cannot be achieved. If the Ge content exceeds 0.01% by weight, electrode cracking during bonding tends to occur. Therefore, preferably used Be content is 0.00002 to 0.001% by weight, Ca content is 0.00005 to 0.01% by weight, and Ge content is 0.
It was determined to be 0001 to 0.01% by weight.

【0014】〔第3群;Eu,Y,La,Pb,Er,
Gd,Ce,Pr,Nd,Sm〕第1群の成分に、第3
群の成分すなわちEu,Y,La,Pb,Er,Gd,
Ce,Pr,Nd,Smの内少なくとも1種の成分を
0.0001〜0.02重量%含有した場合、ボールネ
ック部の信頼性において、第1群のみを含有する組成と
対比して同等の効果を有する。この場合、第3群の成分
を含有しても、第1群の成分であるPt,Ag,Ybの
いずれか1種を含有しない場合、ボールネック部の信頼
性において優れた効果は得られない。
[Third group; Eu, Y, La, Pb, Er,
Gd, Ce, Pr, Nd, Sm] The third group is added to the first group of components.
Group components, namely Eu, Y, La, Pb, Er, Gd,
When 0.0001 to 0.02 wt% of at least one of Ce, Pr, Nd, and Sm is contained, the reliability of the ball neck portion is the same as that of the composition containing only the first group. Have an effect. In this case, even if the third group component is contained, if one of Pt, Ag, and Yb which is the first group component is not contained, an excellent effect on the reliability of the ball neck portion cannot be obtained. .

【0015】また第1群の成分及び第2群の成分に、第
3群の成分すなわちEu,Y,La,Pb,Er,G
d,Ce,Pr,Nd,Smの内少なくとも1種の成分
を0.0001〜0.02重量%含有した場合、ボール
ネック部の信頼性において、第1群の成分及び第2群の
成分を同時に含有した組成と対比して同等のさらに優れ
た効果を有する。この場合、第2群及び第3群の成分を
含有しても、第1群の成分であるPt,Ag,Ybのい
ずれか1種を含有しない場合、ボールネック部の信頼性
において優れた効果は得られない。
In addition to the components of the first group and the components of the second group, the components of the third group, namely Eu, Y, La, Pb, Er, G.
When at least one of d, Ce, Pr, Nd, and Sm is contained in an amount of 0.0001 to 0.02% by weight, the reliability of the ball neck portion is such that the first group of components and the second group of components are It has an even more excellent effect equivalent to that of the composition contained at the same time. In this case, even if the components of the second group and the third group are contained but any one of Pt, Ag and Yb which is the component of the first group is not contained, an excellent effect on the reliability of the ball neck portion is obtained. Can't get

【0016】[0016]

【実施例】以下、表1〜表10に示す実施例及び比較例
について説明する。 (実施例1)表中に示す組成と成るように99.999
重量%の金地金と各元素を含む母合金を真空溶解炉で溶
解した後鋳造し、溝ロール,伸線機を用いた冷間加工と
熱処理を繰り返し,最終線径30μm、伸び率4%の細
線になるように仕上げた。この細線をボンディングワイ
ヤとして、高速自動ボンダを用いてICチップ電極上に
超音波熱圧着ボンディングを行った。超音波出力を0.
5Wとし最初のボール接合を行った後、ループ形成と逆
方向にキャピラリを一旦動かしそのリバース角度を垂直
方向に対して60度に設定し、ボールネック部を苛酷に
屈曲させて変形させ、次いで正規のループを形成した。
まず細線を用いてボール形状、振動試験を行い、さらに
ICチップ電極上にボンディングを行った後、接合時の
電極割れ、熱サイクル試験を行った。測定結果を表2に
示す。
EXAMPLES Examples and comparative examples shown in Tables 1 to 10 will be described below. (Example 1) 99.999 so that the composition shown in the table is obtained.
A master alloy containing weight% of gold and each element is melted in a vacuum melting furnace and then cast, and cold working and heat treatment using a groove roll and a wire drawing machine are repeated to obtain a final wire diameter of 30 μm and an elongation of 4%. Finished to be a fine line. Using this thin wire as a bonding wire, ultrasonic thermocompression bonding was performed on the IC chip electrode using a high-speed automatic bonder. Set the ultrasonic output to 0.
After making the first ball joint with 5W, temporarily move the capillary in the direction opposite to the loop formation and set the reverse angle to 60 degrees with respect to the vertical direction, and severely bend and deform the ball neck, and then normal Loops were formed.
First, a ball shape and vibration test were performed using a thin wire, and further bonding was performed on the IC chip electrode, followed by electrode cracking at the time of bonding and a thermal cycle test. The measurement results are shown in Table 2.

【0017】(実施例2〜124/比較例1〜13)表
中に示す組成としたこと以外は実施例1と同様にして細
線に仕上げ、試験を行った。結果を表2,表4,表7,
表10に示す。
(Examples 2 to 124 / Comparative Examples 1 to 13) Fine wires were finished and tested in the same manner as in Example 1 except that the compositions shown in the table were used. The results are shown in Table 2, Table 4, Table 7,
It shows in Table 10.

【0018】測定方法は以下の通りである。 〔ボール形状〕高速自動ボンダに組み込まれている電気
トーチを用いて金ボールを作製し、走査型電子顕微鏡を
用いて金ボールの大きさ、真球度、表面状態を観察し
た。金ボールの大きさは線径の2.5倍、即ち75μm
φを基準とし、真球度、表面状態は比較サンプル対比で
測定した。10個測定して全て良好な時は「良好」、1
個でも不良がある時は「不良」と表示した。
The measuring method is as follows. [Ball Shape] Gold balls were produced using an electric torch incorporated in a high-speed automatic bonder, and the size, sphericity, and surface condition of the gold balls were observed using a scanning electron microscope. The size of the gold ball is 2.5 times the wire diameter, that is, 75 μm
Based on φ, the sphericity and surface condition were measured by comparison with a comparative sample. When 10 pieces are measured and all are good, "good", 1
When there is a defect even in individual pieces, it is displayed as "defective".

【0019】〔接合時の電極割れ〕高速自動ボンダーを
用いて100個のボンディングテストを行い、電極割れ
不良の発生がないものを「良好」、1個でも割れ不良の
発生があるものを「不良」と表示した。
[Electrode cracking at the time of bonding] 100 bonding tests were performed using a high-speed automatic bonder, and those with no electrode cracking failure were evaluated as “good”, and those with even one cracking failure were evaluated as “failed”. Was displayed. "

【0020】〔熱サイクル試験〕ループを形成した後エ
ポキシ樹脂にて封止し、−10℃×30分と150℃×
30分の熱サイクルテストを2000回行った。100個の
試料を測定に供し、導通テストにより断線の有無を確認
した。断線した個数を破断率(%)で表示した。
[Thermal Cycle Test] After forming a loop, it was sealed with an epoxy resin, -10 ° C. × 30 minutes and 150 ° C. ×
A 30-minute heat cycle test was performed 2000 times. 100 samples were subjected to measurement, and the presence or absence of disconnection was confirmed by a continuity test. The number of broken wires was expressed as a breakage rate (%).

【0021】〔振動試験〕基板材料として、ICチップ
電極に代えて銀メッキしたリードフレーム1を用意した
こと以外は実施例1と同様にしてボンディングを行い、
振動試験の材料とした。図1に示す振動試験機2を用
い、前記リードフレーム1に先端をボンディングしたワ
イヤ3をクランプ4で保持し、軸5を中心に左右両側へ
振幅させる振動試験を次の条件で行い、破断に至るまで
の振動回数を測定した。 スパン距離(L1 ):150μm 両側振幅(L2 ):26μm 振動周波数:40Hz(1秒間に40回) 同様の試験を3回繰り返し、得られた平均値を表示し
た。
[Vibration Test] Bonding was performed in the same manner as in Example 1 except that a silver-plated lead frame 1 was prepared as a substrate material instead of the IC chip electrode.
Used as a material for vibration test. Using the vibration tester 2 shown in FIG. 1, the wire 3 having the tip bonded to the lead frame 1 is held by the clamp 4, and a vibration test in which the wire 5 is oscillated to the left and right sides about the shaft 5 is performed under the following conditions, and the rupture occurs. The number of vibrations until reaching was measured. Span distance (L 1 ): 150 μm Bilateral amplitude (L 2 ): 26 μm Vibration frequency: 40 Hz (40 times per second) The same test was repeated 3 times, and the obtained average value was displayed.

【0022】[0022]

【表1】 [Table 1]

【0023】[0023]

【表2】 [Table 2]

【0024】[0024]

【表3】 [Table 3]

【0025】[0025]

【表4】 [Table 4]

【0026】[0026]

【表5】 [Table 5]

【0027】[0027]

【表6】 [Table 6]

【0028】[0028]

【表7】 [Table 7]

【0029】[0029]

【表8】 [Table 8]

【0030】[0030]

【表9】 [Table 9]

【0031】[0031]

【表10】 [Table 10]

【0032】以上の測定結果から明らかなように、所定
量のPt、Ag、Ybからなる第1群の成分を含有した
実施例1〜10は、ボール形状が良好であり、ボンディ
ング時の電極割れ不良の発生がないと共に、熱サイクル
試験後の破断率が1%、振動試験での破断に至るまでの
振動回数が11,000回以上でありボールネック部の
信頼性向上に優れた効果を示した。またこの中でも、Y
bの含有量が0.0001重量%以上である実施例は、
振動試験での破断に至るまでの振動回数が12,000
回以上で、ボールネック部の信頼性向上により優れた効
果を示した。
As is clear from the above measurement results, Examples 1 to 10 containing a predetermined amount of Pt, Ag, and Yb of the first group of components had a good ball shape and cracked electrodes during bonding. In addition to having no defects, the fracture rate after the heat cycle test was 1%, and the number of vibrations until the fracture in the vibration test was 11,000 times or more, which was excellent in improving the reliability of the ball neck part. It was Among these, Y
Examples in which the content of b is 0.0001% by weight or more,
Number of vibrations up to breakage in vibration test is 12,000
Over the times, it showed an excellent effect by improving the reliability of the ball neck portion.

【0033】また前記第1群の成分に加えて、所定量の
Be,Ca,Geの内少なくとも1種からなる第2群の
成分を含有した実施例11〜77は、ボール形状が良好
であり、ボンディング時の電極割れ不良の発生がないと
共に、熱サイクル試験後の破断率が1%以下であり、且
つ振動試験での破断に至るまでの振動回数が11,00
0回以上と優れた効果を示した。またこの中でも、Yb
の含有量が0.0001重量%以上である実施例は、熱
サイクル試験後の破断率が0%、振動試験での破断に至
るまでの振動回数が13,000回以上で、ボールネッ
ク部の信頼性向上にさらに優れた効果を示した。
In addition, in addition to the first group of components, Examples 11 to 77 containing a second group of components consisting of a predetermined amount of at least one of Be, Ca and Ge have good ball shapes. In addition, there is no occurrence of electrode cracking defects during bonding, the breakage rate after the thermal cycle test is 1% or less, and the number of vibrations until breakage in the vibration test is 1100.
An excellent effect was shown with 0 times or more. Among these, Yb
The content of 0.0001% by weight or more is 0, the breaking rate after the heat cycle test is 0%, the number of vibrations up to the breaking in the vibration test is 13,000 times or more, and the ball neck portion It showed a more excellent effect in improving reliability.

【0034】さらに前記第1群の成分に加えて、Eu,
Y,La,Pb,Er,Gd,Ce,Pr,Nd,Sm
の内少なくとも1種の所定量からなる第3群の成分を含
有した実施例78〜98は、第1群のみを含有する実施
例1〜10と対比して同等の効果を示した。
In addition to the components of the first group, Eu,
Y, La, Pb, Er, Gd, Ce, Pr, Nd, Sm
Examples 78 to 98 containing at least one predetermined amount of the third group of components showed the same effect as Examples 1 to 10 containing only the first group.

【0035】さらにまた、前記第1群の成分及び第2群
の成分に加えて、Eu,Y,La,Pb,Er,Gd,
Ce,Pr,Nd,Smの内少なくとも1種の所定量か
らなる第3群の成分を含有した実施例99〜124は、
第1群の成分及び第2群の成分を同時に含有した実施例
11〜77と対比して同等のさらに優れた効果を示し
た。
Furthermore, in addition to the components of the first group and the components of the second group, Eu, Y, La, Pb, Er, Gd,
Examples 99 to 124 containing a third group of components consisting of a predetermined amount of at least one of Ce, Pr, Nd and Sm,
Compared with Examples 11 to 77 in which the components of the first group and the components of the second group were contained at the same time, the same excellent effect was exhibited.

【0036】これに対し、本発明に係る第1群、第2
群、第3群の成分のいずれも含有しない比較例1は、熱
サイクル試験後の破断率が15%、振動試験での破断に
至るまでの回数が6,400回程度であることが判る。
また、第1群の内のいずれか1種の成分を含有しない比
較例2〜10は、熱サイクル試験後の破断率が6〜9
%、振動試験での破断に至るまでの回数が8,000回
以上10,000回以下と、比較例1に比べれば改善さ
れるものの、本発明に比べれば劣ることが判る。さら
に、第1群の成分の全てを含有してもその内のいずれか
1種の含有量が本発明の範囲外である比較例11〜13
は、熱サイクル試験後の破断率が2%、振動試験での破
断に至るまでの回数が11,000回以上と本発明に近
似する結果が得られるものの、ボール形状、チップ電極
割れのいずれかの点で本発明に劣ることが判る。
On the other hand, the first group and the second group according to the present invention
It can be seen that in Comparative Example 1 which does not contain any of the components of the group 3 and the group 3, the fracture rate after the thermal cycle test is 15% and the number of times until the fracture in the vibration test is about 6,400.
Further, Comparative Examples 2 to 10 not containing any one component of the first group have a fracture rate of 6 to 9 after the thermal cycle test.
%, The number of times until breakage in the vibration test is 8,000 times or more and 10,000 times or less, which is improved as compared with Comparative Example 1, but inferior as compared with the present invention. Furthermore, even if all the components of the first group are contained, the content of any one of them is outside the scope of the present invention.
Shows that the fracture rate after the heat cycle test is 2% and the number of times until the fracture in the vibration test is 11,000 or more, which is close to the present invention, either ball shape or chip electrode cracking is obtained. It is understood that the present invention is inferior to the present invention in respect of.

【0037】[0037]

【発明の効果】以上説明したように、本発明に係るIC
チップボンディング用金線は、99.999重量%以上
の高純度金に所定量のPt、Ag及びYbを含有した組
成としたので、超音波出力を増大させた超音波併用熱圧
着ボンディングを行い、且つリバース変形を加えて形成
したループのネック部において、疲労特性に優れると共
に熱サイクルの環境に晒された場合の破断性能を大幅に
向上することが出来た。従って、多数のリード線を用い
ながら短く配線を行う半導体装置の組み立てにおいて高
い信頼性が得られ、半導体装置の高速化,高機能化,小
型化,薄型化の促進に極めて有用である。
As described above, the IC according to the present invention
Since the gold wire for chip bonding has a composition containing 99.999% by weight or more of high-purity gold and a predetermined amount of Pt, Ag and Yb, ultrasonic combined thermocompression bonding with increased ultrasonic output is performed. Moreover, in the neck portion of the loop formed by applying the reverse deformation, the fatigue property was excellent, and the fracture performance when exposed to the environment of the heat cycle could be significantly improved. Therefore, high reliability can be obtained in assembling a semiconductor device in which a large number of lead wires are used for short wiring, and it is extremely useful for accelerating speeding up, high functionality, miniaturization, and thinning of the semiconductor device.

【0038】また、99.999重量%以上の高純度金
に所定量のPt、Ag及びYbを含有し、さらに所定量
のBe,Ca,Geの内少なくとも1種を含有した組成
とした場合は、超音波出力を増大させた超音波併用熱圧
着ボンディングを行い、且つリバース変形を加えて形成
したループのネック部において、疲労特性、及び熱サイ
クルの環境に晒された場合の破断性能をさらに向上する
ことが出来、前述した効果をより実効あるものとするこ
とができた。
In the case where the composition is such that 99.999% by weight or more of high-purity gold contains a predetermined amount of Pt, Ag and Yb, and further contains a predetermined amount of at least one of Be, Ca and Ge. Improves fatigue characteristics and rupture performance when exposed to the environment of thermal cycle in the neck part of the loop formed by applying reverse deformation and ultrasonic combined thermocompression bonding with increased ultrasonic output It was possible to make the above-mentioned effect more effective.

【図面の簡単な説明】[Brief description of drawings]

【図1】振動試験の概要を示す簡略図。FIG. 1 is a simplified diagram showing an outline of a vibration test.

【符号の説明】[Explanation of symbols]

1:リードフレーム 2:振動試験機 3:ボンディングワイヤ 4:クランプ 5:振幅中心軸 1: Lead frame 2: Vibration tester 3: Bonding wire 4: Clamp 5: Amplitude center axis

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 99.999重量%以上の高純度金に、
白金(Pt):0.0001〜0.005重量%、銀
(Ag):0.0001〜0.005重量%、及びイッ
テルビウム(Yb):0.00005〜0.005重量
%を含有することを特徴とするICチップボンディング
用金線。
1. A high purity gold of 99.999% by weight or more,
Platinum (Pt): 0.0001 to 0.005% by weight, silver (Ag): 0.0001 to 0.005% by weight, and ytterbium (Yb): 0.00005 to 0.005% by weight. Gold wire for IC chip bonding.
【請求項2】 ベリリウム(Be):0.00002〜
0.001重量%,カルシウム(Ca):0.0000
5〜0.01重量%,ゲルマニウム(Ge):0.00
01〜0.01重量%の内少なくとも1種を含有するこ
とを特徴とする請求項1記載のICチップボンディング
用金線。
2. Beryllium (Be): 0.00002-
0.001% by weight, calcium (Ca): 0.0000
5 to 0.01% by weight, germanium (Ge): 0.00
The gold wire for IC chip bonding according to claim 1, which contains at least one of 01 to 0.01% by weight.
【請求項3】ユウロピウム(Eu),イットリウム
(Y),ランタン(La),鉛(Pb),エルビウム
(Er),カドリニウム(Gd),セリウム(Ce),
プラセオジム(Pr),ネオジム(Nd),サマリウム
(Sm)の内少なくとも1種を0.0001〜0.02
重量%含有することを特徴とする請求項1又は請求項2
記載のICチップボンディング用金線。
3. Europium (Eu), yttrium (Y), lanthanum (La), lead (Pb), erbium (Er), cadolinium (Gd), cerium (Ce),
At least one of praseodymium (Pr), neodymium (Nd), and samarium (Sm) is 0.0001 to 0.02.
% Or claim 2 characterized in that the content of 1 wt%
Gold wire for IC chip bonding described.
JP7118522A 1995-05-17 1995-05-17 Gold wire for bonding Pending JPH08316262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7118522A JPH08316262A (en) 1995-05-17 1995-05-17 Gold wire for bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7118522A JPH08316262A (en) 1995-05-17 1995-05-17 Gold wire for bonding

Publications (1)

Publication Number Publication Date
JPH08316262A true JPH08316262A (en) 1996-11-29

Family

ID=14738704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7118522A Pending JPH08316262A (en) 1995-05-17 1995-05-17 Gold wire for bonding

Country Status (1)

Country Link
JP (1) JPH08316262A (en)

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