JPS6030160A - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JPS6030160A JPS6030160A JP58137591A JP13759183A JPS6030160A JP S6030160 A JPS6030160 A JP S6030160A JP 58137591 A JP58137591 A JP 58137591A JP 13759183 A JP13759183 A JP 13759183A JP S6030160 A JPS6030160 A JP S6030160A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- gold
- sodium
- strength
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
不発明は半導体素子と外部リードとの電気的接続に用い
られるボンディングワイヤーに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bonding wire used for electrical connection between a semiconductor element and an external lead.
半導体装置の組立において、半導体素子と外部リードを
金属線でボンディングする方式が一般的である。このよ
うな金属線として金線及びアルミニウム線が用いられ、
前者は熱圧着で、後者は超音波でボンディングされてい
る。金線を用いる熱圧着ボンディングの工程は大略、中
ボンディングキャピラリーを通した金線の先端を電気的
に又は水素炎により溶融してボールを形成する過程、（
ｉｉ）該ボールを半導体素子上の電極にキャピラリーで
押し付けて接合せしめるボールボンド過程、６１０キヤ
ピラリーを移動して金線ループを形成した後、外部リー
ド上に金線を押し付は接合せしめるウェッジボンド過程
、及び（ｉｉｉ＋ ）金線を挾んで上方に引張り、金線
を破断した後キャピラリーを半導体素子上に移動させる
過程、から成っており、全過程は２００〜３００Ｃの加
熱雰囲気中で行なわれる。2. Description of the Related Art In assembling semiconductor devices, it is common to bond semiconductor elements and external leads with metal wires. Gold wire and aluminum wire are used as such metal wires,
The former is thermocompression bonded, and the latter is bonded using ultrasonic waves. The process of thermocompression bonding using a gold wire is roughly a process of melting the tip of the gold wire passed through a middle bonding capillary electrically or with a hydrogen flame to form a ball (
ii) A ball bonding process in which the ball is pressed against an electrode on a semiconductor element using a capillary to bond it, and a wedge bonding process in which a gold wire loop is formed by moving the 610 capillary and then the gold wire is pressed onto the external lead and bonded. , and (iii+) sandwiching and pulling the gold wire upward to break the gold wire and then moving the capillary onto the semiconductor element, and the entire process is carried out in a heated atmosphere at 200 to 300C.
このようなボンディング工程はワイヤーボンダーによっ
て手動的又は自動的に行なうことができる。ところでこ
のようなボンディングに使用される金線は性質にバラツ
キがあるとボール形状、ループ形状、接合強度が区々と
なり、半導体装置の信頼性を低下せしめることから純度
が９９．９９％以上の高純度金を用いるようにしている
。然るに近年半導体装置、特にＩＣの組立コストを低減
するため自動ボングーの一層の高速化が計られてきたが
、上記高純度金線はこのような高速化に適合し得ないこ
とが明らかになってきた。その理由は窩純度金融の機械
的強度特に熱間における破断強度の低い点にあり、キャ
ピラリーの高速移動で金線が引張られた際その引張り力
が金線の破断強度を超えることがあり、そのためボンデ
ィング中に線切れが頻発するからである。又、線切れに
至らず何とかボンディング出来たとしても、−産熱を受
けた高純度金線は著るしく軟化し、ループ形状を保つだ
けの強さを殆んど失なう結果、ループが垂れて（これを
ループタレと称する）素子又は素子を塔載している金属
部に接触し、動作不良の原因となることもある。Such a bonding process can be performed manually or automatically using a wire bonder. However, if the properties of the gold wire used for such bonding vary, the ball shape, loop shape, and bonding strength will vary, reducing the reliability of semiconductor devices. I try to use pure gold. However, in recent years, attempts have been made to further increase the speed of automatic bongos in order to reduce the assembly costs of semiconductor devices, especially ICs, but it has become clear that the high-purity gold wire mentioned above cannot be adapted to such increased speeds. Ta. The reason for this is that the mechanical strength of the gold wire is low, especially its breaking strength in hot conditions, and when the gold wire is pulled by the high-speed movement of the capillary, the tensile force may exceed the breaking strength of the gold wire. This is because line breakage occurs frequently during bonding. Also, even if you manage to bond without breaking the wire, the high-purity gold wire will become significantly softer due to the heat generated, and will lose most of its strength to maintain its loop shape, resulting in the loop being broken. It may sag (this is called loop sag) and come into contact with the element or the metal part on which the element is mounted, causing malfunction.
このような高純度金線の欠点を解消するためＯａ。In order to eliminate these drawbacks of high purity gold wire, Oa.
Ｂθを微量添加した金合金線が提案されている（特開昭
５３−／θＳ９乙ｇ号、特開昭３３− 、／／、２０Ａ
；ワ号）これらの金合金線は熱間強度が高純度金線の常
温強度程度あり、これによって高速ボンダーはその性能
を最大限に発揮できるようになった。A gold alloy wire to which a small amount of Bθ is added has been proposed (JP-A-53-/θS9-g, JP-A-33-, //, 20A).
The hot strength of these gold alloy wires is comparable to that of high-purity gold wire at room temperature, and this allows high-speed bonders to maximize their performance.
本発明者等はＯａ、Ｂθ以外の種々の光重について実験
を重ねた結果、ナ） ＩＪウム（Ｎ、）も又、同様の効
果をもたらすことを見出して本発明に到達したものであ
る。As a result of repeated experiments with various light weights other than Oa and Bθ, the present inventors discovered that IJum (N, ) also brings about the same effect and arrived at the present invention.
即ち、本発明のボンディングワイヤーは純度９７．９９
爪景％以上の金に０．００θ／〜θ、０／重量％のナト
リウムを含有した金合金線とした点に特徴があナトリウ
ムの含有率は大きい程常温強度、熱間強度共に大きくな
るが、ｏ、ｏｉ重量％を超えるとボール形状が真球にな
らなくなるのでｏ、ｏｉ重量％以下とする必要がある。That is, the bonding wire of the present invention has a purity of 97.99.
The wire is characterized by the fact that it is a gold alloy wire containing 0.00 θ/~θ, 0/wt% sodium in gold of more than 100% by weight.The higher the sodium content, the higher the strength at room temperature and hot strength , o, oi weight percent, the ball shape will not become a true sphere, so it is necessary to keep it below o, oi weight percent.
またナトリウムの含有率がθ、 ０００／重量％以下で
はナトリウム含有による効果が殆んど生じないので、ナ
トリウムの含有率はθ、θ０θ／〜θ、ｏ／重景％とす
る必要がある。より好ましいナトリウムの含有率はθ、
０００３〜θ、ｏｏｔ、＊ｍ％である。Furthermore, if the sodium content is less than θ, 000/wt%, the effect of containing sodium will hardly be produced, so the sodium content needs to be θ, θ0/~θ, o/weight%. A more preferable sodium content is θ,
0003~θ,oot,*m%.
本発明に用いる全原料は純度背、９９重徂％以上であれ
ば良い。通常フォーナインと称する純金中には不純物と
してＦｅ、ｓｌ、Ｍｇ １Ｐｂ ＸＯｕ −Ｉ Ａｇ等
を含んでいる。これら不純物の含有率は産地により、又
メーカーにより一定しないので望ましくはファイブナイ
ン（純度？ワ、ワ背爪量％以上）を用いるのが良い。All raw materials used in the present invention need only have a purity of 99% by weight or more. Pure gold, which is usually called four nines, contains impurities such as Fe, sl, Mg 1Pb XOu -I Ag, and the like. Since the content of these impurities varies depending on the production area or manufacturer, it is preferable to use five nines (purity? Wa, Wa back nail amount % or more).
本発明のボンディングワイヤーは次のようにして製造ル
得る。The bonding wire of the present invention can be manufactured as follows.
ＤＩＪち、所望のＮａ含有率とするためＮａ含有率既知
のＡｕ −Ｎａ母合金と高純度金の配合比を決め、それ
ぞれ秤量して不活性ガス雰囲気中のルツボ中で熔解し、
曽造後鍛造又は溝ロール等で一定の線径まで圧延した後
、順次口径の小さいダイスを用いて伸線加工する。DIJ: In order to obtain the desired Na content, a blending ratio of an Au-Na master alloy with a known Na content and high-purity gold is determined, each weighed and melted in a crucible in an inert gas atmosphere.
After the wire is forged or rolled to a certain wire diameter using a groove roll, etc., the wire is drawn using successively smaller diameter dies.
本発明の金合金組成は純金線に比べて引張強度が大きい
ため、伸線加工中の断線も著るしく減少する利点もある
。Since the gold alloy composition of the present invention has a higher tensile strength than pure gold wire, it also has the advantage of significantly reducing wire breakage during wire drawing.
以下に実施例を示す。Examples are shown below.
実施例
全原料としてファイブナインの高純度金を用い、ナトリ
ウムを０．０００ｇ 、 ０．００７！；及び０．００
６７重量％含有する金合金インゴットを作成し・これら
に鍛造、伸線加工を施して直径０．０２３’ｌ ｍＷの
ボンディングワイヤーを製造した。伸線後のワイヤーを
室温における破断伸び率（δ）がｔ％程度になるように
熱処理した後、室温における破断強度（σＢ）、破断伸
び率、Ｕ＆θＣに加熱下の破断強度、破断伸び率を測定
した。Example: Five Nine high purity gold was used as all raw materials, and sodium was 0.000g and 0.007! ; and 0.00
A gold alloy ingot containing 67% by weight was prepared and subjected to forging and wire drawing to produce a bonding wire with a diameter of 0.023'l mW. After the drawn wire is heat-treated so that the elongation at break (δ) at room temperature is approximately t%, the breaking strength at room temperature (σB), elongation at break, U & θC are calculated by adding the strength at break and elongation at break to U & θC. It was measured.
測定結果を次表に示す。The measurement results are shown in the table below.
又、これらの金合金線を高速ボンダーによるワイヤーボ
ンディングに供したところ、ボール形成性が良く、ルー
プのタレも認められなかった。Furthermore, when these gold alloy wires were subjected to wire bonding using a high-speed bonder, ball forming properties were good and no loop sagging was observed.
出願人 住友金属鉱山株式会社 代理人 弁理土中村膀成 ：Applicant: Sumitomo Metal Mining Co., Ltd. Agent: Patent attorney Uranari Donakamura:
Claims (1)
を含有することを特徴とする残部純度？ｑ、ｑｑ重量％
以上の高純度金からなるボンディングワイヤー。(1) Residual purity characterized by containing o, ooo/~0.0/wt% sodium? q, qq weight%
Bonding wire made of high purity gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58137591A JPS6030160A (en) | 1983-07-29 | 1983-07-29 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58137591A JPS6030160A (en) | 1983-07-29 | 1983-07-29 | Bonding wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6030160A true JPS6030160A (en) | 1985-02-15 |
Family
ID=15202280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58137591A Pending JPS6030160A (en) | 1983-07-29 | 1983-07-29 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6030160A (en) |
-
1983
- 1983-07-29 JP JP58137591A patent/JPS6030160A/en active Pending
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