JPS6120693A - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JPS6120693A
JPS6120693A JP59139108A JP13910884A JPS6120693A JP S6120693 A JPS6120693 A JP S6120693A JP 59139108 A JP59139108 A JP 59139108A JP 13910884 A JP13910884 A JP 13910884A JP S6120693 A JPS6120693 A JP S6120693A
Authority
JP
Japan
Prior art keywords
wire
ball
conductivity
bonding wire
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59139108A
Other languages
Japanese (ja)
Other versions
JPH0520493B2 (en
Inventor
Shigemi Yamane
山根　茂美
Koichiro Atsumi
幸一郎 渥美
Tetsuo Ando
安藤　鉄男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59139108A priority Critical patent/JPS6120693A/en
Publication of JPS6120693A publication Critical patent/JPS6120693A/en
Publication of JPH0520493B2 publication Critical patent/JPH0520493B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/481—Disposition
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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To suppress H2, O2, N2 and CO gas, to improve the ball joining strength, and also to improve the conductivity by limiting an element and a component of a copper bonding wire. CONSTITUTION:As for an element and a component of a bonding wire, it contains 0.001-2% by a weight ratio >=1 kinds of elements selected among Mg, Ca, rare earth element ; Ti; Hf; V; Nb; Ta; Ni; Pd; Pt; Au; Cd; B; Al; In; Si; Ge; Pb; P; Sb; Bi; Se and Te, and the balance is copper. In this regard, Mg; Y; lanthanides and Hf among said elements do not lower the conductivity so much, and the gas generation preventing effect is high. However, if they are added too much, the conductivity is lowered, therefore, its component range is set to 0.01- 1W%.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、銅系ボンディングワイヤーに関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a copper-based bonding wire.

〔発明の技術的背景及びその問題点〕[Technical background of the invention and its problems]

ＩＣやＬＳＩ等の半導体素子の内部では、例えば、図面
に示すように、半導体チップｔｌ）及びリードフィンガ
ー（２）が設けられており、これらを線径１０〜１００
μ程度のボンディングワイヤー（３）で結ぶ構造となっ
ている。Inside a semiconductor element such as an IC or LSI, for example, as shown in the drawing, a semiconductor chip (tl) and lead fingers (2) are provided, and these are arranged with wire diameters of 10 to 100 mm.
It has a structure in which it is connected with a bonding wire (3) of about μ.

このボンディングワイヤー（３）の接合方法としては、
まずワイヤーの先端をボール状に加熱溶融させ、次にこ
のボール状の先端を半導体チップ（１１−こ圧接し、更
に弧を描くようにワイヤーを延ばし、３００〜３５０℃
に加熱されたリードフィンガー（２）にワイヤーの一部
を再度圧接し、切断することにより、半導体チップ０１
とリードフィンガー（２）とを結線するもので、ある。The bonding method for this bonding wire (3) is as follows:
First, the tip of the wire is heated and melted into a ball shape, and then this ball-shaped tip is pressure-welded to a semiconductor chip (11), and the wire is further extended in an arc and heated to 300 to 350℃.
By pressing a part of the wire again onto the heated lead finger (2) and cutting it, the semiconductor chip 01
and the lead finger (2).

この種のボンディングワイヤーとして導電性、ワイヤー
伸び、ワイヤー強度、半導体チップとの接合強度（以下
ボール接合強度と称す、）及びボール形成性が要求され
ており、従来から主に金線が使用されている。This type of bonding wire is required to have good conductivity, wire elongation, wire strength, bonding strength with semiconductor chips (hereinafter referred to as ball bonding strength), and ball formability, and conventionally gold wire has mainly been used. There is.

しかし、近年、価格及び導電性の点からボンディングワ
イヤーとして、銅線を用いる試みがなされているが、銅
線を用いて熱圧接を行なうと、ボール接合強度が低下す
る場合がしばしばあり、一方、ボール接合性を改善しよ
うとすると、導電性が低下し、双方の特性を満足する銅
リードワイヤーが得られなかった。However, in recent years, attempts have been made to use copper wire as bonding wire from the viewpoint of cost and conductivity, but when thermal pressure bonding is performed using copper wire, the ball bonding strength often decreases. When attempting to improve the ball bonding properties, the conductivity decreased, making it impossible to obtain a copper lead wire that satisfied both characteristics.

〔発明の目的〕[Purpose of the invention]

本発明は、ボール接合強度が良好でかつ導電性が良好な
銅リードワイヤーを提供することを目的とする。An object of the present invention is to provide a copper lead wire with good ball joint strength and good conductivity.

〔発明の概要〕[Summary of the invention]

本発明者らは、ボンディングワイヤーについて鋭意研究
した結果、ボンディング強度の低下は、主に形成された
ボール中のガスにより生じることを見い出した。As a result of intensive research on bonding wires, the present inventors found that the decrease in bonding strength is mainly caused by gas in the formed ball.

即チ、半導体チップ上にこのボールが圧接された際、ガ
スによる空洞が接合部に位置し、接合強度を低下させる
こと及びこの現象は特に銅線で発生しやすいことを見い
出した。Specifically, it has been found that when this ball is pressed onto a semiconductor chip, a gas cavity is located at the joint, reducing the joint strength, and that this phenomenon is particularly likely to occur with copper wire.

本発明は、これらの知見をもとに完成されたものである
。The present invention was completed based on these findings.

本発明は、Ｍｇ＋Ｏａ＋希土類元素、ＴｌＨｒ、ＶｔＮ
ｂｚＴａ＋Ｎｉ、Ｐａ＋Ｐｔ。The present invention includes Mg+Oa+rare earth elements, TlHr, VtN
bzTa+Ni, Pa+Pt.

Ａｕ、Ｏｄ、Ｂ、ＡＡ、Ｉｎ、Ｓｉ、Ｇｅ。Au, Od, B, AA, In, Si, Ge.

Ｐ　ｂ　、Ｐ　、Ｓ　ｂ　、Ｂ　ｉ　ｔ　８　ｅ及びＴ
ｅから選択された１種又は２種以上の元素を０．００１
〜２重量％含有し、残部が実質的に銅であるボンディン
グワイヤーを提供する。P b , P , S b , B i t 8 e and T
0.001 of one or more elements selected from e
2% by weight, with the remainder being substantially copper.

即ち、これら添加元素は、合金中のＨ２Ｏ。That is, these additional elements are H2O in the alloy.

Ｎ、０を固定し、Ｈ２ｔ　Ｏ２１Ｎ　２及びＣＯガスの
発生を抑制する。N, 0 is fixed to suppress the generation of H2tO21N2 and CO gas.

しかし、これらの添加量が多すぎると、導電性を低下さ
せ、一方少なすぎると、効果が生じにくい、したがって
、上記添加元素の成分範囲は０．００１〜２重量％、更
には０．０１〜１重量％が好ましい。However, if the amount of these additives is too large, the conductivity will be reduced, while if the amount is too small, the effect will be difficult to produce. Therefore, the component range of the above additive elements is 0.001 to 2% by weight, and more preferably 0.01 to 2% by weight. 1% by weight is preferred.

上記添加元素のうちでも、Ｍ　ｇ　、　Ｙ　、ランタノ
イド元素及びＨｆは、導電性をあまり低下させず、ガス
発生防止効果が高い、しかしこれらの添加量も多すぎる
と、導電性を低下させ、一方少なすぎると効果が生じに
くい。Among the above additive elements, M g , Y , lanthanide elements, and Hf do not significantly reduce conductivity and have a high gas generation prevention effect. If it is too small, it will be difficult to produce an effect.

したがって、その成分範囲は０．０１〜１重量％、更に
は０．０５〜０．２重量％が好ましい。Therefore, the component range is preferably 0.01 to 1% by weight, more preferably 0.05 to 0.2% by weight.

なお１本発明のワイヤーは被覆されて用いられてもよい
。Note that the wire of the present invention may be used in a coated state.

以上述べたワイヤーの製造方法を次に述べる。談ず、成
分元素を添加して溶解鋳造してインゴットを得、次にこ
のインゴットを７００〜８００℃で熱間加工し、その後
９００〜９６０℃で熱処理し、急冷後、６０％以上の冷
間加工を施し、４００〜６００℃で熱処理を施す。A method for manufacturing the wire described above will be described next. The ingot is obtained by melting and casting with the addition of component elements, followed by hot working at 700 to 800°C, then heat treatment at 900 to 960°C, and after quenching, 60% or more cold processing. Processing and heat treatment at 400 to 600°C.

それにより所望のワイヤーが得られる。The desired wire is thereby obtained.

〔発明の実施例〕[Embodiments of the invention]

本発明の実施例について説明する。第１表に示す成分の
リードワイヤーを製造し、その特性として、導電性、初
期ボール硬度、ワイヤーの伸び、ワイヤー強度、ボール
接合強度及びボール形成性を測定した。Examples of the present invention will be described. Lead wires having the components shown in Table 1 were manufactured, and their properties were measured for conductivity, initial ball hardness, wire elongation, wire strength, ball bonding strength, and ball formability.

初期ボール硬度は、ボール圧着時の硬度をいい、硬度が
低いほど、圧着性は良好となる。The initial ball hardness refers to the hardness at the time of ball pressure bonding, and the lower the hardness, the better the pressure bonding properties.

又、ワイヤーの伸びは、ワイヤーが破断する迄の伸びを
いい、伸びが大きいほど、断線率が低い。Further, the elongation of the wire refers to the elongation until the wire breaks, and the larger the elongation, the lower the wire breakage rate.

又、ボール接合強度は、熱圧着されているリードワイヤ
ーの接合部に、つり針状のカギをかけ、真横に引っばっ
て、接合部をせん断破壊させるまでの荷重（ｇｆ）　　
を測定することにより、得られる。In addition, the ball joint strength is determined by the load (gf) required to shear the joint by placing a hook in the shape of a fishing needle on the joint of the thermocompressed lead wire and pulling it sideways.
It can be obtained by measuring .

又、ボール形成性は、ワイヤーの先端がボール状に溶融
した際、酸化するかどうか、空洞ができるかどうか、ボ
ールの径のバラツキが大きいか小さいかという事を測定
することにより、判断される。In addition, ball-forming properties are determined by measuring whether the tip of the wire oxidizes when melted into a ball, whether a cavity is formed, and whether the variation in the diameter of the ball is large or small. .

まず、導電性に関しては、実施例＋１１〜（５）及び比
較例＋１１がＡｕ線より高い導電性を示し、非常に有効
である。First, regarding conductivity, Examples +11 to (5) and Comparative Example +11 exhibit higher conductivity than the Au wire and are very effective.

又、初期ボール硬度に関しては、実施例（］）〜（５）
及び比較例（５）がビッカース９０以下を示し、実用的
である。Regarding the initial ball hardness, Examples (]) to (5)
and Comparative Example (5) showed a Vickers value of 90 or less, which is practical.

又、ワイヤーの伸びに関しては、実施例ｉｌｌ〜（５）
及び比較例（１１、（３１がＡｕ１ｉＪより大きい伸び
を示し、有用である。In addition, regarding the elongation of the wire, Example ill~(5)
and Comparative Examples (11, (31) show greater elongation than Au1iJ and are useful.

又、ワイヤー強度に関しては、実施例（１）〜（５）及
び比較例（１）〜（４）がＡｕ線と同等あるいはそれよ
り大きい強度を示し、有用である。Moreover, regarding the wire strength, Examples (1) to (5) and Comparative Examples (1) to (4) show strength equal to or greater than that of Au wire, and are useful.

又、ボール接合強度に関しては、実施例＋１ｉ〜（５）
及び比較例（２１ｔ　（３ｉ　、　（５１は接合強度が
６５（１’）以上であり、実用的である。In addition, regarding the ball joint strength, Examples +1i~(5)
and Comparative Example (21t (3i, (51) has a bonding strength of 65 (1') or more and is practical.

又、ボール形成性は、比較例（４）以外は、すべて良好
である。In addition, ball forming properties were all good except for Comparative Example (4).

以上の各特性を総合的に考慮すると１本発明の実施例ｔ
ｌ）〜（５）は比較例（１１〜（５）に比べて、優れて
いる。Comprehensively considering each of the above characteristics, Example t of the present invention
1) to (5) are superior to comparative examples (11 to (5)).

以下余白 〔発明の効果〕 以上説明したように、本発明のリードワイヤーは、Ｍｇ
ｅＯａ、希土類元素、Ｔ１゜Ｈｒ、Ｖ、Ｎｂ、Ｔａ、Ｎ
ｉ、Ｐｄ、Ｐｔ。Margin below [Effects of the Invention] As explained above, the lead wire of the present invention has Mg
eOa, rare earth elements, T1°Hr, V, Nb, Ta, N
i, Pd, Pt.

Ａｕ、Ｃｄ、Ｂ、Ａ／、Ｉｎ、Ｓｌ、Ｇｅ。Au, Cd, B, A/, In, Sl, Ge.

Ｐｂ、Ｐ、８ｂ、Ｂｉ、８ｅ及びＴｅから選択された１
種又た２種以上の元素を０．　ＯＯ１〜２ｆｆｉｉ！％
含有させることにより、ボール接合強度が良好でかつ導
電性が良好な銅系り一ドワイヤーを提供できる。1 selected from Pb, P, 8b, Bi, 8e and Te
Species or two or more elements at 0. OO1~2ffii! %
By containing it, it is possible to provide a copper-based wire with good ball bonding strength and good conductivity.

【図面の簡単な説明】[Brief explanation of drawings]

図面は、半導体素子の一部切り欠き斜視図である。 ｌ・・・半導体チップ ２・・リードフィンガー ３・・・ボンディングワイヤー ４・・・樹脂モールド The drawing is a partially cutaway perspective view of a semiconductor element. l...Semiconductor chip 2. Lead finger 3...Bonding wire 4...Resin mold

Claims (2)

【特許請求の範囲】[Claims] （１）Ｍｇ、Ｃａ、希土類元素、Ｔｉ、Ｈｆ、ＶＮｂ、
Ｔａ、Ｎｉ、Ｐｄ、Ｐｔ、Ａｕ、ＣｄＢ、Ａｌ、Ｉｎ、
Ｓｉ、Ｇｅ、Ｐｂ、Ｐ、 Ｓｂ、Ｂｉ、Ｓｅ及びＴｅから選択された１種又は２種
以上の元素を０．００１〜２重量％含有し、残部が実質
的に銅であるボンディングワイヤー。(1) Mg, Ca, rare earth elements, Ti, Hf, VNb,
Ta, Ni, Pd, Pt, Au, CdB, Al, In,
A bonding wire containing 0.001 to 2% by weight of one or more elements selected from Si, Ge, Pb, P, Sb, Bi, Se, and Te, with the remainder being substantially copper. （２）Ｍｇ、Ｙ、ランタノイド元素、Ｈｆから選択され
た１種又は２種以上の元素を０．０１〜１重量％含有し
、残部が実質的に銅である特許請求の範囲第１項に記載
のボンディングワイヤー。(2) Claim 1 contains 0.01 to 1% by weight of one or more elements selected from Mg, Y, lanthanide elements, and Hf, with the remainder being substantially copper. Bonding wire as described.
JP59139108A 1984-07-06 1984-07-06 Bonding wire Granted JPS6120693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59139108A JPS6120693A (en) 1984-07-06 1984-07-06 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59139108A JPS6120693A (en) 1984-07-06 1984-07-06 Bonding wire

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6095481A Division JP2501303B2 (en) 1994-04-11 1994-04-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6120693A true JPS6120693A (en) 1986-01-29
JPH0520493B2 JPH0520493B2 (en) 1993-03-19

Family

ID=15237669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59139108A Granted JPS6120693A (en) 1984-07-06 1984-07-06 Bonding wire

Country Status (1)

Country Link
JP (1) JPS6120693A (en)

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JPS6199645A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper alloy for bonding of semiconductor device
JPS6199646A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper wire for bonding of semiconductor device
JPS6280241A (en) * 1985-10-01 1987-04-13 Tanaka Denshi Kogyo Kk Copper wire for bonding semiconductor device
JPS6320844A (en) * 1986-07-15 1988-01-28 Toshiba Corp Semiconductor device
JPS6321841A (en) * 1986-07-16 1988-01-29 Toshiba Corp Semiconductor device
JPS6329938A (en) * 1986-07-23 1988-02-08 Toshiba Corp Semiconductor device
JPS6364211A (en) * 1986-09-05 1988-03-22 古河電気工業株式会社 Fine copper wire and manufacture thereof
JPS63310932A (en) * 1987-06-11 1988-12-19 Kurasawa Kogaku Kogyo Kk Copper alloy
JPS643903A (en) * 1987-06-25 1989-01-09 Furukawa Electric Co Ltd Thin copper wire for electronic devices and manufacture thereof
US7347056B2 (en) 2004-07-09 2008-03-25 Honda Motor Co., Ltd. Vehicle air-conditioning system
JP2008085319A (en) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd Copper alloy bonding wire for semiconductor device
JP2008085320A (en) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd Copper alloy bonding wire for semiconductor device
JP2008169422A (en) * 2007-01-10 2008-07-24 Sumitomo Electric Ind Ltd Copper alloy, manufacturing method therefor, and electric wire or cable using copper alloy
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JP2011003745A (en) * 2009-06-18 2011-01-06 Sumitomo Metal Mining Co Ltd Cu BONDING WIRE
US8004094B2 (en) 2006-08-31 2011-08-23 Nippon Steel Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
US8119951B2 (en) 2000-05-17 2012-02-21 Hobart Brothers Company Weld wire with enhanced slag removal
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JPS59139663A (en) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp Cu-alloy fine wire for wire bonding on semiconductor device
JPS60124960A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element
JPS60236253A (en) * 1984-05-10 1985-11-25 Furukawa Electric Co Ltd:The Bonding fine wire for semiconductor

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JPS59139663A (en) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp Cu-alloy fine wire for wire bonding on semiconductor device
JPS60124960A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element
JPS60236253A (en) * 1984-05-10 1985-11-25 Furukawa Electric Co Ltd:The Bonding fine wire for semiconductor

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JPS6199646A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper wire for bonding of semiconductor device
JPS6199645A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper alloy for bonding of semiconductor device
JPH0564224B2 (en) * 1985-10-01 1993-09-14 Tanaka Electronics Ind
JPS6280241A (en) * 1985-10-01 1987-04-13 Tanaka Denshi Kogyo Kk Copper wire for bonding semiconductor device
JPS6320844A (en) * 1986-07-15 1988-01-28 Toshiba Corp Semiconductor device
JPS6321841A (en) * 1986-07-16 1988-01-29 Toshiba Corp Semiconductor device
JPS6329938A (en) * 1986-07-23 1988-02-08 Toshiba Corp Semiconductor device
JPS6364211A (en) * 1986-09-05 1988-03-22 古河電気工業株式会社 Fine copper wire and manufacture thereof
JPH0464121B2 (en) * 1986-09-05 1992-10-14 Furukawa Denki Kogyo Kk
JPS63310932A (en) * 1987-06-11 1988-12-19 Kurasawa Kogaku Kogyo Kk Copper alloy
JPS643903A (en) * 1987-06-25 1989-01-09 Furukawa Electric Co Ltd Thin copper wire for electronic devices and manufacture thereof
US8119951B2 (en) 2000-05-17 2012-02-21 Hobart Brothers Company Weld wire with enhanced slag removal
US8158907B2 (en) 2000-05-17 2012-04-17 Hobart Brothers Company Weld wire with enhanced slag removal
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JP2008085319A (en) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd Copper alloy bonding wire for semiconductor device
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JP2008169422A (en) * 2007-01-10 2008-07-24 Sumitomo Electric Ind Ltd Copper alloy, manufacturing method therefor, and electric wire or cable using copper alloy
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