JPS59139662A - Alloy thin wire for wire bonding of semiconductor device - Google Patents

Alloy thin wire for wire bonding of semiconductor device

Info

Publication number
JPS59139662A
JPS59139662A JP58014168A JP1416883A JPS59139662A JP S59139662 A JPS59139662 A JP S59139662A JP 58014168 A JP58014168 A JP 58014168A JP 1416883 A JP1416883 A JP 1416883A JP S59139662 A JPS59139662 A JP S59139662A
Authority
JP
Japan
Prior art keywords
wire
rare
earth
annealing
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58014168A
Other languages
Japanese (ja)
Other versions
JPH0211013B2 (en
Inventor
Akira Kiyono
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP58014168A priority Critical patent/JPH0211013B2/ja
Publication of JPS59139662A publication Critical patent/JPS59139662A/en
Publication of JPH0211013B2 publication Critical patent/JPH0211013B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/432Mechanical processes
    • H01L2224/4321Pulling
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011Groups of the periodic table
    • H01L2924/01105Rare earth metals
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Abstract

PURPOSE:To enable to cut down the cost of fine wires used for the titled device by a method wherein one or two kinds or more of Ge, Be and Ca are contained in one or two kinds or more of rare-earth element as occasion demands, thereby enabling to let the remainder have the composition consisting of Cu and inevitable impurities. CONSTITUTION:The rare-earth element is improved in the breaking strength at high temperature and also in the tensile strength at high temperature, and the content of said rare-earth element is designated at 0.0005-2.0%. The ingredient of Ge, Be and Ca, when they are coexisted with rare-earth element, has the function wherein their strength at high temperature will be further increased. The content of said ingredient is to be set at 0.0005-0.5%. After a cold rolling has been performed, prescribed cycles of annealing wherein an annealing at 300 deg.C in vacuum is considered as one cycle, are performed on the wire material. Subsequently, a stripping process is performed using dies. A wire-drawing process and the specified cycles of wire-drawing process, wherein annealing at 300 deg.C in vacuum is considered as one cycle, are performed.
JP58014168A 1983-01-31 1983-01-31 Expired - Lifetime JPH0211013B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58014168A JPH0211013B2 (en) 1983-01-31 1983-01-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58014168A JPH0211013B2 (en) 1983-01-31 1983-01-31

Publications (2)

Publication Number Publication Date
JPS59139662A true JPS59139662A (en) 1984-08-10
JPH0211013B2 JPH0211013B2 (en) 1990-03-12

Family

ID=11853607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58014168A Expired - Lifetime JPH0211013B2 (en) 1983-01-31 1983-01-31

Country Status (1)

Country Link
JP (1) JPH0211013B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120693A (en) * 1984-07-06 1986-01-29 Toshiba Corp Bonding wire
JPS6148544A (en) * 1984-08-16 1986-03-10 Sumitomo Metal Mining Co Ltd High-conductivity copper alloy and low softening temperature
JPS6152333A (en) * 1984-08-21 1986-03-15 Toshiba Corp Bonding wire
JPS6329938A (en) * 1986-07-23 1988-02-08 Toshiba Corp Semiconductor device
JPS643903A (en) * 1987-06-25 1989-01-09 Furukawa Electric Co Ltd Thin copper wire for electronic devices and manufacture thereof
JPH0770674A (en) * 1994-06-06 1995-03-14 Toshiba Corp Semiconductor device
JPH0770675A (en) * 1994-07-08 1995-03-14 Toshiba Corp Semiconductor device
JPH0770673A (en) * 1994-04-11 1995-03-14 Toshiba Corp Semiconductor device
JP2008085320A (en) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd Copper alloy bonding wire for semiconductor device
JP2008085319A (en) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd Copper alloy bonding wire for semiconductor device
JP2008182170A (en) * 2006-12-28 2008-08-07 Hitachi Cable Ltd Solder-plated wire for solar cell and manufacturing method thereof, and solar cell
US8004094B2 (en) 2006-08-31 2011-08-23 Nippon Steel Materials Co., Ltd. Copper alloy bonding wire for semiconductor device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0520493B2 (en) * 1984-07-06 1993-03-19 Tokyo Shibaura Electric Co
JPS6120693A (en) * 1984-07-06 1986-01-29 Toshiba Corp Bonding wire
JPS6148544A (en) * 1984-08-16 1986-03-10 Sumitomo Metal Mining Co Ltd High-conductivity copper alloy and low softening temperature
JPS6247936B2 (en) * 1984-08-16 1987-10-12 Sumitomo Metal Mining Co
JPS6152333A (en) * 1984-08-21 1986-03-15 Toshiba Corp Bonding wire
JPH0547609B2 (en) * 1984-08-21 1993-07-19 Tokyo Shibaura Electric Co
JPS6329938A (en) * 1986-07-23 1988-02-08 Toshiba Corp Semiconductor device
JPS643903A (en) * 1987-06-25 1989-01-09 Furukawa Electric Co Ltd Thin copper wire for electronic devices and manufacture thereof
JPH0770673A (en) * 1994-04-11 1995-03-14 Toshiba Corp Semiconductor device
JPH0770674A (en) * 1994-06-06 1995-03-14 Toshiba Corp Semiconductor device
JPH0770675A (en) * 1994-07-08 1995-03-14 Toshiba Corp Semiconductor device
JP2008085320A (en) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd Copper alloy bonding wire for semiconductor device
JP2008085319A (en) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd Copper alloy bonding wire for semiconductor device
JP4691533B2 (en) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 Copper alloy bonding wire for semiconductor devices
JP4705078B2 (en) * 2006-08-31 2011-06-22 新日鉄マテリアルズ株式会社 Copper alloy bonding wire for semiconductor devices
US8004094B2 (en) 2006-08-31 2011-08-23 Nippon Steel Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
US8610291B2 (en) 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
JP2008182170A (en) * 2006-12-28 2008-08-07 Hitachi Cable Ltd Solder-plated wire for solar cell and manufacturing method thereof, and solar cell

Also Published As

Publication number Publication date
JPH0211013B2 (en) 1990-03-12

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