JP2003059964A - Bonding wire and manufacturing method therefor - Google Patents

Bonding wire and manufacturing method therefor

Info

Publication number
JP2003059964A
JP2003059964A JP2001244585A JP2001244585A JP2003059964A JP 2003059964 A JP2003059964 A JP 2003059964A JP 2001244585 A JP2001244585 A JP 2001244585A JP 2001244585 A JP2001244585 A JP 2001244585A JP 2003059964 A JP2003059964 A JP 2003059964A
Authority
JP
Japan
Prior art keywords
wire
mass
gold
treatment
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001244585A
Other languages
Japanese (ja)
Inventor
Shuichi Mitoma
修一 三苫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP2001244585A priority Critical patent/JP2003059964A/en
Publication of JP2003059964A publication Critical patent/JP2003059964A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve strength at normal and high temperatures in a bonding wire for connecting a semiconductor device and to achieve narrow-pitch wiring. SOLUTION: The bonding wire for semiconductor devices should have a composition comprising 0.01 to 8 mass % Co, 0.01 to 1 mass % Ge, or 0.01 to 0.84 mass % Rh while the remainder is made of gold and inevitable impurities. A normal temperature tensile strength is 350 to 1500 MPa.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は半導体素子上の電極
と外部リードを接続する為のボンディングワイヤとその
製造方法に関し、さらに詳しくは高強度化により、微細
ピッチ配線に用いて好適な半導体素子用ボンディングワ
イヤに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire for connecting an electrode on a semiconductor element and an external lead and a method for manufacturing the same, and more particularly to a semiconductor element suitable for use in fine pitch wiring due to higher strength. Regarding bonding wire.

【０００２】[0002]

【従来の技術】従来から半導体装置の実装において、半
導体素子上の電極と外部リードを接続するワイヤとして
は、純度９９．９９重量％以上の高純度金に他の金属元
素を溶解法により微量添加した金線が信頼性に優れてい
るとして多用されている。2. Description of the Related Art Conventionally, in mounting a semiconductor device, as a wire for connecting an electrode on a semiconductor element and an external lead, a trace amount of another metal element is added to high-purity gold having a purity of 99.99% by weight or more by a melting method. Gold wire is often used because of its high reliability.

【０００３】通常半導体装置は、前記接続する方法とし
て、金線を用いたボールボンディング法が主として用い
られ、その後樹脂封止して半導体装置とされている。Usually, in the semiconductor device, a ball bonding method using a gold wire is mainly used as the connection method, and then a semiconductor device is formed by resin sealing.

【０００４】ボールボンディング法により配線する方法
に於いては、繰り出された金線はボンディングツールと
してのキャピラリーに導入され、次いでそのツールの出
口側に導出された金線の先端を加熱、溶解してボールを
形成した後、該ボールを半導体素子のＡｌ電極上に押圧
し、キャピラリーをＸＹＺ方向（前後、左右、上下方
向）に移動させて所定のループ形状を形成し、外部リー
ドにボンディングした後、金線を切断してワイヤボンデ
ィングする方法（以下「ボールボンディング方法」とい
う）がとられている。ここでボールボンディング法によ
り配線し、ループを形成した状態を図１に示す。１は半
導体素子、２は半導体素子上のＡｌ電極、３は金線、４
はリードフレーム、５はファースト側接合点、６はセカ
ンド側接合点である。In the wiring method by the ball bonding method, the unwound gold wire is introduced into a capillary as a bonding tool, and then the tip of the gold wire led out to the exit side of the tool is heated and melted. After forming the ball, the ball is pressed onto the Al electrode of the semiconductor element, the capillary is moved in the XYZ directions (front-back, left-right, up-down direction) to form a predetermined loop shape, and after bonding to an external lead, A method of cutting a gold wire and performing wire bonding (hereinafter referred to as "ball bonding method") is used. FIG. 1 shows a state in which wiring is performed by the ball bonding method to form a loop. 1 is a semiconductor element, 2 is an Al electrode on the semiconductor element, 3 is a gold wire, 4
Is a lead frame, 5 is a first-side joining point, and 6 is a second-side joining point.

【０００５】一方、半導体装置は高密度化が要求され、
これに対応するため狭ピッチ化が求められている。狭ピ
ッチ化への対応として例えば特開２０００−４０７１０
号公報では図１に於けるファースト側接合点５に注目し
て、金合金線の組成を調整することにより圧着ボールの
真円度を向上させて、これによって狭ピッチに対応して
いくことが提案されている。On the other hand, semiconductor devices are required to have high density.
To meet this demand, a narrower pitch is required. To cope with the narrower pitch, for example, Japanese Patent Laid-Open No. 2000-40710.
In the publication, paying attention to the joining point 5 on the first side in FIG. 1, it is possible to improve the roundness of the pressure bonding ball by adjusting the composition of the gold alloy wire, and thereby to cope with a narrow pitch. Proposed.

【０００６】[0006]

【発明が解決しようとする課題】しかしながら前述した
真円度の向上した圧着ボールを用いることにより、狭ピ
ッチ配線に対応していくことにより一応の成果は得られ
るものの、狭ピッチ配線の向上の程度は真円度の向上分
に限定されるものであり、半導体装置の高密度化にも限
度がある。However, although the above-mentioned pressure-bonded balls having an improved roundness are used to achieve narrow-pitch wiring, some results can be obtained, but the degree of improvement in narrow-pitch wiring is improved. Is limited to the improvement of roundness, and there is also a limit to increasing the density of semiconductor devices.

【０００７】本発明は上述したような事情に鑑みてなさ
れたものであり、その目的とするところは、狭ピッチ化
を可能にする半導体素子用ボンディングワイヤを提供す
ることにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a bonding wire for a semiconductor element, which enables a narrow pitch.

【０００８】[0008]

【課題を解決するための手段】本発明者はここで鋭意検
討の結果、半導体素子用ボンディングワイヤを常温及び
高温で高強度とすることによって、強度向上に対応し
て、ワイヤの直径を小さくして用いることにより狭ピッ
チ配線の向上を図る事が有効であると考え本発明に到っ
た。即ちボールボンディング法で得られるボール径はワ
イヤの直径に比例することが知られている為、強度を向
上させ、これに対応してワイヤの直径を小さくすること
により、ボール径即ち圧着ボール径を小さくして、狭ピ
ッチ配線の向上を図るものである。又常温強度は配線し
た時のループ形状を安定させる為に必要であり、高温強
度は樹脂封止の際のワイヤフローを防止する為に必要な
性能である。こうして、本発明は下記を提供することに
よって配線の狭ピッチ化を可能にする。As a result of intensive studies, the present inventor has found that the bonding wire for a semiconductor element is made to have high strength at room temperature and high temperature to reduce the diameter of the wire in order to improve the strength. It was thought that it is effective to improve the narrow-pitch wiring by using the same, and the present invention has been reached. That is, it is known that the ball diameter obtained by the ball bonding method is proportional to the diameter of the wire. Therefore, by improving the strength and correspondingly decreasing the diameter of the wire, The size is reduced to improve the narrow pitch wiring. Further, the room temperature strength is necessary for stabilizing the loop shape when wiring, and the high temperature strength is the performance required for preventing wire flow during resin sealing. Thus, the present invention enables narrowing of the wiring by providing:

【０００９】（１）Ｃｏを０．０１〜８質量％又はＧｅ
を０．０１〜１質量％又はＲｈを０．０１〜０．８４質
量％、残部が金及び不可避不純物からなる組成を有し、
常温引張強度が３５０〜１５００ＭＰａであることを特
徴とする半導体素子用ボンディングワイヤ。(1) 0.01 to 8% by mass of Co or Ge
Is 0.01 to 1% by mass or Rh is 0.01 to 0.84% by mass, and the balance is gold and inevitable impurities.
A bonding wire for a semiconductor device, which has a tensile strength at room temperature of 350 to 1500 MPa.

【００１０】（２）更にＮｉ，Ａｌ，Ｓｂから選ばれる
少なくとも１種を０．０１〜１質量％含有することを特
徴とする請求項１記載の半導体素子用ボンディングワイ
ヤ。(2) The bonding wire for a semiconductor element according to claim 1, further comprising 0.01 to 1% by mass of at least one selected from Ni, Al and Sb.

【００１１】（３）更にＣａ，Ｂｅ，Ｙ，Ｌａ，Ｅｕ，
Ｇｄから選ばれる少なくとも１種を１〜５００質量ｐｐ
ｍ含有することを特徴とする（１）、（２）記載の半導
体素子用ボンディングワイヤ。(3) Furthermore, Ca, Be, Y, La, Eu,
1 to 500 mass pp for at least one selected from Gd
The bonding wire for a semiconductor element according to (1) or (2), which contains m.

【００１２】（４）ワイヤの外周部に金、銅、銀から選
ばれる１種が被覆されていることを特徴とする（１）〜
（３）記載の半導体素子用ボンディングワイヤ。(4) The outer peripheral portion of the wire is coated with one kind selected from gold, copper and silver (1) to
(3) The bonding wire for a semiconductor element as described in (3).

【００１３】（５）少なくともＣｏを０．０１〜８質量
％又はＧｅを０．０１〜１質量％又はＲｈを０．０１〜
０．８４質量％含有する金合金材料に冷間加工及びアニ
ール処理を施す半導体素子用ボンディングワイヤの製造
方法であって、さらに上記材料に溶体化処理及び時効処
理を施すことを特徴とする半導体素子用ボンディングワ
イヤの製造方法。(5) At least 0.01 to 8% by mass of Co or 0.01 to 1% by mass of Ge or 0.01 to Rh.
A method of manufacturing a bonding wire for a semiconductor device, which comprises subjecting a gold alloy material containing 0.84% by mass to cold working and annealing treatment, the method further comprising subjecting the material to solution treatment and aging treatment. Of bonding wire for automobile.

【００１４】[0014]

【発明の実施の形態】（１）組成 ｉ）金原料としては一般的に９９．９９質量％以上、好
ましくは９９．９９５質量％以上、特に９９．９９９質
量％以上に精製した高純度金が用いられる。BEST MODE FOR CARRYING OUT THE INVENTION (1) Composition i) As a gold raw material, high-purity gold generally purified to 99.99 mass% or more, preferably 99.995 mass% or more, and particularly 99.999 mass% or more is used. Used.

【００１５】ii）本発明になるボンディングワイヤの組
成は所定量のＣｏ，Ｇｅ，Ｒｈのうち１種（以下「第１
群元素」という）又はそれに加えて所定量のＮｉ，Ａ
ｌ，Ｓｂから選ばれる少なくとも１種（以下「第２群元
素」という）又はそれに加えて所定量のＣａ，Ｂｅ，
Ｙ，Ｌａ，Ｅｕ，Ｇｄから選ばれる少なくとも１種（以
下「第３群元素」という）を含有し、残部が金及び不可
避不純物からなる組成となっている。Ii) The composition of the bonding wire according to the present invention is one of predetermined amounts of Co, Ge and Rh (hereinafter referred to as “first
Group element ") or a predetermined amount of Ni, A
at least one selected from l and Sb (hereinafter referred to as "second group element") or a predetermined amount of Ca, Be,
The composition contains at least one selected from Y, La, Eu, and Gd (hereinafter referred to as “third group element”), and the balance is gold and inevitable impurities.

【００１６】iii)本発明になるボンディングワイヤ組成
の限定理由 （ａ）第１群元素 第１群元素を含有する金合金材料を溶体化処理した後時
効処理することにより常温引張強度、高温引張強度が大
幅に向上するにもかかわらず電気抵抗を低く抑えること
が出来ると共に、伸線加工時の破断回数も少なく、ボー
ルボンディング法に使用する際のボール形状も良好であ
るという優れた効果を有している。Iii) Reasons for limiting the composition of the bonding wire according to the present invention (a) Room temperature tensile strength and high temperature tensile strength by subjecting a gold alloy material containing a group 1 element to a solution treatment followed by an aging treatment It has an excellent effect that the electric resistance can be suppressed to a low level, the number of breaks during wire drawing is small, and the ball shape is good when used in the ball bonding method. ing.

【００１７】第１群元素のうちＣｏ，Ｇｅ，Ｒｈ各々の
含有量が０．０１質量％未満になると０．０１質量％以
上と対比してワイヤを溶体化処理した後時効処理を行っ
ても、常温引張強度、高温引張強度が向上しない。Ｃｏ
含有量が８質量％、Ｇｅ含有量が１質量％、Ｒｈ含有量
が０．８４質量％を各々超えるとワイヤを溶体化処理し
た後時効処理を行うと、伸線加工中の断線が多くなりボ
ンディングワイヤの製造が出来なくなる。この為Ｃｏの
含有量は０．０１〜８質量％Ｇｅの含有量は０．０１〜
１質量％、Ｒｈの含有量は０．０１〜０．８４質量％と
定めた。When the contents of Co, Ge, and Rh of the elements of the first group are less than 0.01% by mass, the wires are solution treated in comparison with 0.01% by mass or more, and then the aging treatment is performed. , Normal temperature tensile strength and high temperature tensile strength are not improved. Co
When the content is 8% by mass, the Ge content is 1% by mass, and the Rh content is 0.84% by mass or more, when the wire is solution-treated and then the aging treatment is performed, the number of disconnections during wire drawing increases. The bonding wire cannot be manufactured. Therefore, the content of Co is 0.01 to 8% by mass and the content of Ge is 0.01 to 8% by mass.
The content of 1% by mass and Rh was set to 0.01 to 0.84% by mass.

【００１８】このように、本発明によれば、高純度金に
所定量の第１群元素を含有せしめた金合金材料を溶体化
処理した後時効処理することにより常温引張強度、高温
引張強度が大幅に向上出来、電気抵抗、伸線加工時の破
断回数、ボール形状の点で優れているという効果があ
る。この効果は、所定量の第１群元素を含有せしめた金
合金材料に他の元素を添加しても基本的に維持される。As described above, according to the present invention, the room temperature tensile strength and the high temperature tensile strength are improved by subjecting the gold alloy material, which is made of high-purity gold containing a predetermined amount of the first group element, to the solution treatment and then the aging treatment. There is an effect that it can be greatly improved and is excellent in electric resistance, the number of breaks during wire drawing, and the ball shape. This effect is basically maintained even if another element is added to the gold alloy material containing a predetermined amount of the first group element.

【００１９】（ｂ）追加元素 このように、所定量の第１群元素の他追加の元素を添加
しても本発明の効果は維持されるが追加元素一例として
第２群元素が挙げられる。例えばＮｉ，Ａｌ，Ｓｂから
選ばれる少なくとも１種の成分を０．０１〜１質量％の
範囲で添加しても常温引張強度、高温引張強度が同様に
大幅に向上出来、電気抵抗、伸線加工時の破断回数、ボ
ール形状の点で優れているという効果がある。(B) Additional element In this way, the effect of the present invention is maintained even if a predetermined amount of the additional element other than the first group element is added, but the second group element is mentioned as an example of the additional element. For example, even if at least one component selected from Ni, Al, and Sb is added in the range of 0.01 to 1% by mass, the room temperature tensile strength and the high temperature tensile strength can be greatly improved similarly, and the electrical resistance and wire drawing work can be performed. There is an effect that it is excellent in the number of times of breakage and the ball shape.

【００２０】所定量の第１群元素又はそれに加えて所定
量の第２群元素に更に第３群元素としてＣａ，Ｂｅ，
Ｙ，Ｌａ，Ｅｕ，Ｇｄから選ばれる少なくとも１種の成
分を１〜５００質量ｐｐｍの範囲で添加すると常温引張
強度、高温引張強度が相乗効果により大幅に向上出来る
という優れた効果を有している。In addition to a predetermined amount of the first group element or a predetermined amount of the second group element, as a third group element, Ca, Be,
When at least one component selected from Y, La, Eu, and Gd is added in the range of 1 to 500 mass ppm, it has an excellent effect that room temperature tensile strength and high temperature tensile strength can be significantly improved by a synergistic effect. .

【００２１】（２）常温引張強度 本発明でのワイヤは常温における引張強度が３５０〜１
５００ＭＰａであるものである。このようなワイヤは、
本発明になる組成を有する金合金材料を溶体化処理した
後時効処理することにより得られる。(2) Normal Temperature Tensile Strength The wire of the present invention has a tensile strength of 350 to 1 at room temperature.
It is 500 MPa. Such wires are
It is obtained by subjecting a gold alloy material having the composition of the present invention to solution treatment and then aging treatment.

【００２２】ボンディングワイヤは、最も汎用的にはア
ニール処理により常温での伸び率を２〜８％に制御して
用いている。本発明では常温伸び率４％に於いて常温引
張強度として３５０〜１５００ＭＰａが得られる為、汎
用的に使用出来ることも確認出来た。The bonding wire is most commonly used by controlling the elongation at room temperature to 2 to 8% by annealing. In the present invention, since a room temperature tensile strength of 350 to 1500 MPa is obtained at a room temperature elongation of 4%, it can be confirmed that it can be generally used.

【００２３】常温引張強度が３５０ＭＰａ未満の場合
は、狭ピッチ配線に対応する本発明の課題に対して強度
が不足し、１５００ＭＰａを超えると伸線加工中、とり
わけ直径１００μｍ以下での伸線加工中の断線が多くな
りボンディングワイヤの製造が出来なくなる。この為常
温引張強度は３５０〜１５００ＭＰａと定めた。When the room temperature tensile strength is less than 350 MPa, the strength is insufficient for the problem of the present invention which corresponds to the narrow pitch wiring, and when it exceeds 1500 MPa, wire drawing is performed, especially wire drawing with a diameter of 100 μm or less. As a result, the number of wire breakages increases and it becomes impossible to manufacture the bonding wire. Therefore, the room temperature tensile strength is set to 350 to 1500 MPa.

【００２４】（３）製造方法 本発明のボンディングワイヤの製造方法は、所定の金合
金組成材料を用いて鋳造、伸線加工、最終アニールする
製造方法に加えて、溶体化処理及び時効処理を施すこと
を特徴とするものである。(3) Manufacturing Method In the bonding wire manufacturing method of the present invention, solution treatment and aging treatment are performed in addition to the manufacturing method of casting, wire drawing, and final annealing using a predetermined gold alloy composition material. It is characterized by that.

【００２５】ｉ）鋳造／伸線加工工程 先ず、金合金組成材料の鋳造工程では一般的には、直径
１０〜５０mm、長さ１００〜５００mmのインゴットを得
る。該インゴットは、押出又は粗圧延を行った後、極細
線に伸線加工する。本発明になる半導体素子用ボンディ
ングワイヤとしては、直径が５〜２５μｍの極細線のも
のが好ましく用いられ、強度の向上に伴い更に超極細線
とすることも出来る。I) Casting / drawing step First, in the casting step of the gold alloy composition material, an ingot having a diameter of 10 to 50 mm and a length of 100 to 500 mm is generally obtained. The ingot is extruded or roughly rolled, and then drawn into an ultrafine wire. As the bonding wire for a semiconductor element according to the present invention, an ultrafine wire having a diameter of 5 to 25 μm is preferably used, and an ultrafine wire can be used as the strength is improved.

【００２６】ii）アニール工程 半導体素子用ボンディングワイヤとして、最終線径に伸
線加工した後、アニール処理を行い当該ワイヤを軟化処
理をする。使用目的に対応して伸び率２〜１０％、好ま
しくは３〜６％に調整して用いる。標準は４％である。Ii) Annealing step As a semiconductor element bonding wire, after drawing wire to the final wire diameter, annealing treatment is performed to soften the wire. The elongation is adjusted to 2 to 10%, preferably 3 to 6% according to the purpose of use. The standard is 4%.

【００２７】iii)表面処理及び巻き替え工程 アニールされた金線は、くっつきやすい為、表面に界面
活性剤を塗布して用いる。このように表面処理された金
線は巻き替え工程でスプールに巻き替えて製品とする。
巻き替え条件はクロス多層巻きとすることが好ましく、
５００〜３０００ｍの長さが好ましく用いられる。スプ
ールの容量が大きくなったり、本発明の高強度超極細線
の場合これに対応した長尺巻きとすることが出来、最大
長さを５,０００ｍや１０,０００ｍとすることが出来て
半導体実装の生産性向上にも好ましい。Iii) Surface Treatment and Rewinding Step Since the annealed gold wire easily sticks, a surface-active agent is applied to the surface of the gold wire before use. The gold wire thus surface-treated is rewound on a spool in a rewinding process to be a product.
The rewinding condition is preferably a cross multilayer winding,
A length of 500 to 3000 m is preferably used. In the case of the high-strength ultrafine wire of the present invention, the length of the spool can be increased and the maximum length can be set to 5,000 m or 10,000 m for semiconductor mounting. Is also preferable for improving productivity.

【００２８】iv）溶体化処理及び時効処理 本発明のボンディングワイヤの製造方法では、溶体化処
理及び時効処理を施すことが必要である。Iv) Solution Treatment and Aging Treatment In the method for manufacturing a bonding wire of the present invention, it is necessary to carry out a solution treatment and an aging treatment.

【００２９】溶体化処理とは金合金を固体溶解度曲線よ
り高い温度に加熱して均一固溶体の状態を形成し、次い
で室温に急冷して過飽和固溶体をつくる操作をいい、時
効処理とは過飽和固溶体をその個体溶解度曲線より低く
室温より高い温度に保持して飽和固溶体と第２相である
Ａｕ−Ｃｏ，Ａｕ−Ｇｅ，Ａｕ−Ｒｈの各化合物相に分
離させて金合金を硬化させる操作をいう。The solution treatment is an operation in which a gold alloy is heated to a temperature higher than the solid solubility curve to form a uniform solid solution state and then rapidly cooled to room temperature to form a supersaturated solid solution. The aging treatment is a supersaturated solid solution. It is an operation of maintaining the temperature lower than the solid solubility curve and higher than room temperature to separate the saturated solid solution and the compound phases of the second phase of Au-Co, Au-Ge and Au-Rh to harden the gold alloy.

【００３０】本発明の製造方法では本発明組成の金合金
に対して溶体化処理、時効処理の順に行えば良い。溶体
化処理は加熱、急冷操作が必要な為、形状が簡素なイン
ゴット段階で行うことが好ましい。時効処理は溶体化処
理の後であれば良いが作業性を考慮して伸線加工の途中
で行うことが好ましい。時効処理温度は第１群元素含有
量に対応して１００〜５００℃で１〜５００時間行うこ
とが好ましく、更に好ましくは２００〜３００℃であ
る。In the production method of the present invention, the solution treatment and the aging treatment may be performed in this order on the gold alloy having the composition of the present invention. Since the solution heat treatment requires heating and quenching operations, it is preferable to perform the solution heat treatment at an ingot stage having a simple shape. The aging treatment may be performed after the solution treatment, but is preferably performed during the wire drawing process in consideration of workability. The aging treatment temperature is preferably 100 to 500 ° C. for 1 to 500 hours, more preferably 200 to 300 ° C., corresponding to the group 1 element content.

【００３１】ｖ）金属被覆工程 本発明で得られるワイヤの表面に別途金属を被覆して用
いることも出来る。半導体素子用金線は金めっき、銀め
っきが施されたリードフレーム上に圧着接合されるの
で、その接合性向上の為である。被覆金属として金、
銅、銀等が例示出来る。このようにすると芯材として高
強度ワイヤを用いて表面に任意の金属を用いる為、高強
度を維持しながら被覆金属の性能を利用した半導体素子
用ボンディングワイヤとすることが出来る。例えば、被
覆金属として金を用いると、プリント基板の銅配線上の
金めっき面との接合性を向上させることが出来、銅また
は銀を用いると金よりも電気抵抗率（μΩ・cm）が低
く、高周波デバイスに好適に用いることが出来る。被膜
厚さは最終ワイヤ直径の０．１〜２０％が良い。V) Metal coating step The surface of the wire obtained in the present invention may be coated with a metal separately before use. This is because the gold wire for a semiconductor element is pressure-bonded to a lead frame plated with gold or silver, so that the bondability is improved. Gold as the coating metal,
Examples are copper and silver. In this case, since a high-strength wire is used as the core material and an arbitrary metal is used on the surface, a bonding wire for a semiconductor element can be obtained that utilizes the performance of the coated metal while maintaining high strength. For example, when gold is used as the coating metal, the bondability with the gold-plated surface on the copper wiring of the printed circuit board can be improved, and when copper or silver is used, the electrical resistivity (μΩcm) is lower than that of gold. It can be preferably used for high frequency devices. The coating thickness is preferably 0.1 to 20% of the final wire diameter.

【００３２】被覆方法は、ワイヤの表面をめっきした
り、金属とのクラッド接合により被覆することが出来、
この後所定直径まで伸線加工する。本金属被覆工程は、
インゴット段階若しくは中間素線段階で金属被覆を行う
ことがワイヤの精度向上の為に好ましい。The coating method is such that the surface of the wire can be plated or coated by clad bonding with a metal.
After this, wire drawing is performed to a predetermined diameter. This metal coating process
It is preferable to perform metal coating at the ingot stage or the intermediate wire stage in order to improve the accuracy of the wire.

【００３３】vi）溶体化処理及び時効処理を施したワイ
ヤ 本発明で得られる溶体化処理及び時効処理を施したワイ
ヤはこれらの処理を施さないワイヤと対比して常温引張
強度、高温引張強度が大幅に向上すると共に電気抵抗を
抑制することが出来るという優れた効果を有している。Vi) Wires Solution-Aged and Aged The wire solution-aged and aged obtained in the present invention has room-temperature tensile strength and high-temperature tensile strength as compared with wires not subjected to these treatments. It has an excellent effect that it can be greatly improved and the electric resistance can be suppressed.

【００３４】ワイヤの結晶組織はＴＥＭ（透過型電子顕
微鏡）で観察するとＡｕ−Ｃｏ合金の場合、Ａｕ−Ｃｏ
固溶体中にＡｕＣｏ合金粒子が分散して析出した状態と
なっている。Ａｕ−Ｇｅ合金、Ａｕ−Ｒｈ合金の場合も
同様に各合金固溶体中に対応する合金粒子が分散して析
出した状態となっている。限定するわけではないが、一
般的に述べると、固溶体結晶粒内に微細粒子として析出
する合金粒子の寸法が径辺の大きさとして０．００５〜
１μｍの範囲が好ましく、より好ましくは０．００５〜
０．５μｍの範囲内、さらに好ましくは０．００５〜
０．１μｍの範囲内である。When the crystal structure of the wire is observed with a TEM (transmission electron microscope), in the case of Au—Co alloy, Au—Co
The AuCo alloy particles are dispersed and precipitated in the solid solution. Similarly, in the case of Au-Ge alloy and Au-Rh alloy, the corresponding alloy particles are dispersed and precipitated in each alloy solid solution. Although not limited thereto, generally speaking, the size of the alloy particles precipitated as fine particles in the solid solution crystal grains is 0.005 as the size of the radial side.
The range of 1 μm is preferable, and more preferably 0.005.
Within the range of 0.5 μm, more preferably 0.005
It is within the range of 0.1 μm.

【００３５】図２はＡｕＣｏの状態図であるが、金の融
点は１０６４℃、Ｃｏの固溶限は９９７℃で８％であ
る。例えば４質量％Ｃｏ位の組成ａをもつＡｕ−Ｃｏ合
金を固溶限界線（溶解度曲線）１より金側になる温度Ｔ
まで加熱し、急冷すると組成ａの過飽和固溶体を得るこ
とが出来る（図３（ａ））。徐冷した場合には、組成ｂ
の固溶体の結晶粒界にＡｕ−Ｃｏ合金粒子が析出する
（図３（ｄ））。溶体化処理で得られた過飽和固溶体を
一般に再結晶温度以下の温度で熱処理して時効処理する
と、Ａｕ−Ｃｏ合金微粒子が微細に分散して析出し、時
効硬化の効果を奏する（図３（ｂ））。ただし時効処理
の温度が高すぎたり、時間が長すぎると析出粒子が粗大
化して時効硬化の効果が得られない（図３（ｃ））。FIG. 2 is a phase diagram of AuCo. The melting point of gold is 1064 ° C., and the solid solution limit of Co is 997 ° C., which is 8%. For example, an Au-Co alloy having a composition a of about 4 mass% Co is a temperature T on the gold side of the solid solution limit line (solubility curve)
When heated to and cooled rapidly, a supersaturated solid solution of composition a can be obtained (Fig. 3 (a)). When slowly cooled, composition b
Au-Co alloy particles are precipitated at the crystal grain boundaries of the solid solution of (3d). When the supersaturated solid solution obtained by the solution treatment is generally heat-treated at a temperature equal to or lower than the recrystallization temperature and subjected to an aging treatment, Au-Co alloy fine particles are finely dispersed and deposited, which has an effect of age hardening (Fig. 3 (b )). However, if the temperature of the aging treatment is too high or the time is too long, the precipitated particles become coarse and the effect of age hardening cannot be obtained (FIG. 3 (c)).

【００３６】[0036]

【実施例】（実施例１）純度９９．９９９質量％の高純
度金に所定量のＣｏを添加し真空溶解炉で溶解した後鋳
造し表１に示す金合金、即ち０．０１質量％Ｃｏを含有
する直径１０mm、長さ１００mmの金合金インゴットを得
て、８００℃に加熱した後水中に急冷して溶体化処理を
行った。該インゴットに溝ロール加工、伸線加工を施し
て、直径１００μｍの段階で２５０℃で３時間時効処理
を行った。次いで最終ワイヤ直径２５μｍに伸線加工し
て伸び率４％になるようにアニール処理した後、界面活
性剤を表面に被覆して半導体素子用ボンディングワイヤ
に仕上げた。Example 1 A high-purity gold having a purity of 99.999% by mass was added with a predetermined amount of Co, melted in a vacuum melting furnace and cast, and then gold alloy shown in Table 1, namely 0.01% by mass Co A gold alloy ingot containing 10 mm in diameter and 100 mm in length was obtained, heated to 800 ° C., and then rapidly cooled in water for solution treatment. The ingot was subjected to groove roll processing and wire drawing processing, and was subjected to an aging treatment at 250 ° C. for 3 hours at a stage of a diameter of 100 μm. Then, the wire was drawn to a final wire diameter of 25 μm and annealed so that the elongation rate was 4%, and then the surface of the wire was coated with a surfactant to complete a bonding wire for a semiconductor device.

【００３７】室温に於ける引張強度を常温強度とし、２
５０℃に於ける引張強度を高温強度とし、伸び率と共に
測定した。又直径２５μｍまでの伸線加工中の断線回数
を測定し、電気抵抗を四端子法を用いて測定した。更に
このワイヤを高速自動ボンダに組み込まれている電気ト
ーチを用いて金ボールを形成し、走査型電子顕微鏡を用
いて金ボールの表面状態を観察した。それらの結果を表
１に示した。The tensile strength at room temperature is defined as room temperature strength, and 2
The tensile strength at 50 ° C was taken as the high temperature strength, and the tensile strength was measured together with the elongation. The number of wire breaks during wire drawing up to a diameter of 25 μm was measured, and the electrical resistance was measured using the four-terminal method. Further, a gold ball was formed by using this wire with an electric torch incorporated in a high-speed automatic bonder, and the surface condition of the gold ball was observed using a scanning electron microscope. The results are shown in Table 1.

【００３８】（実施例１〜７９、比較例１〜１５）金合
金中組成を表１、表２の様にしたこと及び溶体化処理温
度をＣｏ含有量が７質量％の時、９９０℃、Ｇｅ含有量
が０．９質量％の時、３６０℃、Ｒｈ含有量が０．７質
量％の時、１０５０℃としたこと以外は実施例１と同様
にしてワイヤを製造し、常温に於ける強度及び伸び率、
高温に於ける強度及び伸び率、伸線加工中の断線回数、
電気抵抗及びボール表面状態を測定した。伸線加工中に
断線回数が３０回を超えた場合、伸線困難と判断して試
験を中止した。それらの測定結果を表１〜表４に示し
た。(Examples 1 to 79, Comparative Examples 1 to 15) The composition in the gold alloy was as shown in Tables 1 and 2, and the solution treatment temperature was 990 ° C. when the Co content was 7 mass%. A wire was produced in the same manner as in Example 1 except that the Ge content was 0.9% by mass, the temperature was 360 ° C., and the Rh content was 0.7% by mass, the temperature was 1050 ° C. Strength and elongation,
Strength and elongation at high temperature, number of wire breaks during wire drawing,
The electrical resistance and the ball surface condition were measured. When the number of wire breaks exceeded 30 during wire drawing, it was judged that wire drawing was difficult and the test was stopped. The measurement results are shown in Tables 1 to 4.

【００３９】（比較例１６〜２７）金合金中組成を表５
の様にしたこと及び溶体化処理、時効処理を省略したこ
と以外は実施例１と同様にしてワイヤを製造し、測定に
供した。その測定結果を表５に示した。Comparative Examples 16 to 27 Table 5 shows the composition of gold alloy.
A wire was manufactured in the same manner as in Example 1 except that the solution treatment and the aging treatment were omitted, and the wire was subjected to measurement. The measurement results are shown in Table 5.

【００４０】[0040]

【表１】 [Table 1]

【００４１】[0041]

【表２】 [Table 2]

【００４２】[0042]

【表３】 [Table 3]

【００４３】[0043]

【表４】 [Table 4]

【００４４】[0044]

【表５】 [Table 5]

【００４５】（実験例１〜９）金合金中組成、時効処理
の有無、最終ワイヤ直径を表６の様にしたこと以外は実
施例１と同様にしてワイヤを製造し、常温に於ける強
度、伸び率、破断力及び高温に於ける強度、伸び率、破
断力を測定した。(Experimental Examples 1 to 9) A wire was manufactured in the same manner as in Example 1 except that the composition in gold alloy, the presence or absence of aging treatment, and the final wire diameter were as shown in Table 6, and the strength at room temperature. The elongation rate, breaking force, strength at high temperature, elongation rate and breaking force were measured.

【００４６】次いで高速自動ボンダーを用いてボールを
形成し、ＩＣチップ電極上にボールを圧着した。ボール
形成条件は、安定したボール形成が出来る条件であるボ
ール直径がワイヤ直径の１．５倍となるように放電時
間、電流値を調整した。圧着ボール形成条件は、安定し
た圧着ボール形成が出来る条件である。圧着ボール直径
がワイヤ直径の２倍となるように荷重、超音波出力を調
整した。圧着前、圧着後のボール直径を測定し、その結
果を表６に示す。更に圧着ボールの接合剪断力が１００
ＭＰａとなるように剪断荷重を設定して剪断試験を行
い、接合剪断の有無を測定した。接合剪断に耐えるもの
は接合剪断力（ＭＰａ）が＞１００としてその結果を表
６に示す。Next, a ball was formed using a high speed automatic bonder, and the ball was pressure bonded onto the IC chip electrode. The ball forming conditions are such that stable ball formation is possible. The discharge time and the current value were adjusted so that the ball diameter was 1.5 times the wire diameter. The pressure-bonded ball forming conditions are conditions under which stable pressure-bonded ball formation is possible. The load and ultrasonic output were adjusted so that the pressure-bonded ball diameter was twice the wire diameter. The ball diameter was measured before and after pressure bonding, and the results are shown in Table 6. Furthermore, the bonding shear force of the pressure bonding ball is 100
The shear load was set so as to be MPa, a shear test was performed, and the presence or absence of joint shear was measured. Table 6 shows the results when the bonding shear strength (MPa) of those that endure the bonding shear is> 100.

【００４７】[0047]

【表６】 [Table 6]

【００４８】（試験結果） （１）本発明の組成を含有し、製造工程の途中で溶体化
処理及び時効処理を行った実施例１〜７９のものは、常
温ワイヤ強度が３５０〜７６０ＭＰａ、高温ワイヤ強度
が２３０〜６２０ＭＰａと優れたものであった。さらに
このワイヤは高強度でありながら、伸線加工中の断線が
６回以下、電気抵抗は２．５〜４．３μΩ・cmと小さ
く、ボール表面性は良好であることが判る。この中で
も、Ｃａ，Ｂｅ，Ｙ，Ｌａ，Ｅｕ，Ｇｄから選ばれる少
なくとも１種の含有量が０．０１質量％以下のものは、
伸線加工中の断線が０という更に優れた効果を有した。(Test Results) (1) Examples 1 to 79 containing the composition of the present invention and subjected to solution treatment and aging treatment during the manufacturing process have room temperature wire strength of 350 to 760 MPa and high temperature. The wire strength was excellent at 230 to 620 MPa. Further, it can be seen that this wire has a high strength, but the wire breakage during wire drawing is 6 times or less, the electric resistance is small at 2.5 to 4.3 μΩ · cm, and the ball surface property is good. Among these, the content of at least one selected from Ca, Be, Y, La, Eu, and Gd is 0.01 mass% or less,
It had an even more excellent effect that there was no breakage during wire drawing.

【００４９】（２）Ｃｏ，Ｇｅ，Ｒｈの含有量が０．０
１質量％未満である比較例１，３，５，７，９，１１の
ものは常温ワイヤ強度が２７０〜３２０ＭＰａであり、
高温ワイヤ強度が２１０〜２８０ＭＰａであり実施例１
〜７９の方が優れていることが判る。(2) Content of Co, Ge and Rh is 0.0
Comparative example 1,3,5,7,9,11 which is less than 1 mass% has a room temperature wire strength of 270 to 320 MPa,
The high-temperature wire strength was 210 to 280 MPa, and Example 1
It turns out that ~ 79 is superior.

【００５０】（３）Ｃｏの含有量が８質量％を超える比
較例２，８，Ｇｅの含有量が１質量％を超える比較例
４，１０，Ｒｈの含有量が０．８４質量％を超える比較
例６，１２のものは、伸線加工中の断線回数が３０回以
上となり、伸線加工困難と判断して以降の伸線加工作業
を中止した。(3) Comparative examples 2 and 8 in which the content of Co exceeds 8% by mass, comparative examples 4 and 10 in which the content of Ge exceeds 1% by mass, and the content of Rh exceeds 0.84% by mass. In Comparative Examples 6 and 12, the number of wire breaks during wire drawing was 30 or more, and it was judged that wire drawing was difficult, and the wire drawing work thereafter was stopped.

【００５１】（４）Ｃｏ，Ｇｅ，Ｒｈに加えて含有する
Ｃａの含有量が５００質量ｐｐｍを超える比較例１３，
１４，１５のものはボール底部に穴あきが出来て、ボー
ル表面性が悪いものであった。(4) Comparative Example 13 in which the content of Ca in addition to Co, Ge and Rh exceeds 500 mass ppm,
In Nos. 14 and 15, holes were formed in the bottom of the ball, and the surface property of the ball was poor.

【００５２】（５）製造工程の途中で溶体化処理及び時
効処理を行なわなかった比較例１６〜２８のものは、常
温ワイヤ強度が２７０〜３４６ＭＰａと３５０ＭＰａ未
満であり、高温ワイヤ強度が２３０〜２８０ＭＰａであ
り、実施例１〜７９のものは常温ワイヤ強度が全て３５
０ＭＰａ以上と優れていることが判る。(5) In Comparative Examples 16 to 28, which were not subjected to the solution heat treatment and the aging treatment during the manufacturing process, the room temperature wire strength was 270 to 346 MPa and less than 350 MPa, and the high temperature wire strength was 230 to 280 MPa. In all of Examples 1 to 79, the room temperature wire strength is 35.
It turns out that it is excellent as 0 MPa or more.

【００５３】（６）溶体化処理、時効処理の有無の比較
組成が同一で、溶体化処理、時効処理の有無の点で異な
るものを各々対比させて、常温強度、高温強度及び電気
抵抗を下表に示した。(6) Comparative solutions with and without solution heat treatment and aging treatment The compositions having the same composition but different with or without solution heat treatment and aging treatment are compared to reduce the room temperature strength, high temperature strength and electric resistance. Shown in the table.

【００５４】ｉ）常温強度（ＭＰａ＝Ｎ／mm2 ）I) Normal temperature strength (MPa = N / mm 2 ).

【００５５】[0055]

【表７】 [Table 7]

【００５６】上表において溶体化処理、時効処理のあ
り、なしにより得られたワイヤの破断に要する力（Ｆ）
を各々Ｆ1，Ｆ2とし、ワイヤ直径（Ｄ）をＤ1，Ｄ2とす
ると、Ｆ1＝π／４（Ｄ1）2Ａ Ｆ2＝π／４（Ｄ2）2
Ａ となりＦ1＝Ｆ2 のときＤ 1＝Ｄ2（Ｂ／Ａ）1/2 と
なる。即ち同一の常温強度とする為に溶体化処理、時効
処理を施して得られたワイヤは、該処理を施さないワイ
ヤと対比して直径を７８〜９０％小さく出来、圧着ボー
ル径をこれに対応して小さくすることが出来る。In the above table, solution treatment and aging treatment
The force required to break the wire (F)
Each F1, F2And wire diameter (D) is D1, D2Tosu
Then, F1= Π / 4 (D1)2AF2= Π / 4 (D2)2
A becomes F1= F2  When D 1= D2(B / A)1/2 When
Become. That is, solution treatment and aging are performed to obtain the same room temperature strength.
The wire obtained by the treatment is a wire without the treatment.
The diameter can be reduced by 78 to 90% compared to the
The diameter can be correspondingly reduced.

【００５７】真円度を向上させることによるピッチパッ
ドの向上が通常数％であることに対して、本発明によれ
ば更に優れた効果が得られることが判る。It can be seen that the improvement of the pitch pad due to the improvement of the roundness is usually several%, whereas the present invention provides a more excellent effect.

【００５８】ii）高温強度（ＭＰａ＝Ｎ／mm2 ）Ii) High temperature strength (MPa = N / mm 2 ).

【００５９】[0059]

【表８】 [Table 8]

【００６０】高温強度においても同様の効果が得られる
ことが判る。It can be seen that the same effect can be obtained at high temperature strength.

【００６１】iii)電気抵抗（μΩ・cm）Iii) Electric resistance (μΩcm)

【００６２】[0062]

【表９】 [Table 9]

【００６３】溶体化処理、時効処理を施して得られたワ
イヤである実施例のものは、該処理を施さないワイヤで
ある比較例のものと対比して、電気抵抗が大幅に低減向
上し、ボンディングワイヤとして優れていることが判
る。The wire obtained by the solution heat treatment and the aging treatment of the example has a significantly reduced and improved electric resistance as compared with the wire of the comparative example which is not subjected to the treatment. It turns out that it is excellent as a bonding wire.

【００６４】（７）溶体化処理、時効処理の有無の点で
異なる表６実験例３のものは実験例１のものと対比し
て、常温と高温に於けるワイヤ破断力が同等以上である
にも拘わらず該処理を施さない場合の圧着後のボール直
径が５０μｍであることに対して、該処理を施した場合
は４２μｍと８２％にすることが出来、接合剪断力も一
般に用いられる１００ＭＰａ以上であることが判る。(7) Compared with the experimental example 1, the experimental example 3 in Table 6 which is different in the presence or absence of the solution treatment and the aging treatment has the wire breaking force equal to or more than the normal temperature and the high temperature. Despite this, the ball diameter after pressure bonding is 50 μm when the treatment is not applied, whereas when the treatment is applied, it can be 42 μm and 82%, and the bonding shearing force is generally 100 MPa or more. It turns out that

【００６５】（８）溶体化処理、時効処理の有無の点で
異なる表６実験例６のものは実験例４のものと対比し
て、常温と高温に於けるワイヤ破断力が同等以上である
にも拘わらず該処理を施さない場合の圧着後のボール直
径が５０μｍであることに対して、該処理を施した場合
は４５μｍと９０％にすることが出来、接合剪断力も一
般に用いられる１００ＭＰａ以上であることが判る。(8) Compared with the experimental example 4, the experimental example 6 in Table 6 which is different in the presence or absence of the solution treatment and the aging treatment has the wire breaking force equal to or more than the normal temperature and the high temperature. Despite this, the ball diameter after pressing is 50 μm when the treatment is not applied, whereas when the treatment is applied, it can be 45 μm and 90%, and the bonding shearing force is generally 100 MPa or more. It turns out that

【００６６】（９）溶体化処理、時効処理の有無の点で
異なる表６実験例９のものは実験例７のものと対比し
て、常温と高温に於けるワイヤ破断力が同等以上である
にも拘わらず該処理を施さない場合の圧着後のボール直
径が５０μｍであることに対して、該処理を施した場合
は４２μｍと８２％にすることが出来、接合剪断力も一
般に用いられる１００ＭＰａ以上であることが判る。(9) Compared to the experimental example 7, the experimental example 9 in Table 6 which is different in the presence or absence of solution treatment and aging treatment has the wire breaking force at room temperature and high temperature which is equal to or higher than that. Despite this, the ball diameter after pressure bonding is 50 μm when the treatment is not applied, whereas when the treatment is applied, it can be 42 μm and 82%, and the bonding shearing force is generally 100 MPa or more. It turns out that

【００６７】[0067]

【発明の効果】本発明によれば、Ａｕ−Ｃｏ合金、Ａｕ
−Ｇｅ合金又はＡｕ−Ｒｈ合金を溶体化、時効処理して
常温及び高温強度を向上させることにより、従来より大
幅に狭配線ピッチを可能にする半導体素子用のボンディ
ングワイヤが提供される。According to the present invention, Au--Co alloy, Au
A solution of a —Ge alloy or an Au—Rh alloy and an aging treatment to improve the strength at room temperature and high temperature provides a bonding wire for a semiconductor device, which enables a wiring pitch to be significantly narrower than in the past.

【図面の簡単な説明】[Brief description of drawings]

【図１】半導体素子のワイヤボンディングの様子を示
す。FIG. 1 shows a state of wire bonding of a semiconductor element.

【図２】Ａｕ−Ｚｒ相図。FIG. 2 is an Au-Zr phase diagram.

【図３】Ａｕ−Ｃｏ合金のいろいろな熱処理をした組織
を示す。FIG. 3 shows structures of various heat treatments of Au—Co alloy.

【符号の説明】[Explanation of symbols]

１…半導体素子 ２…Ａｌ電極 ３…金線 ４…リードフレーム ５…ファースト側接合点 ６…セカンド側接合点 ｌ…固溶限界線 Ｌ，Ｌ’…液相線 1 ... Semiconductor element 2 ... Al electrode 3 ... Gold wire 4 ... Lead frame 5 ... First side junction 6 ... Second side junction l ... Solid solution limit line L, L '... liquidus line

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】 Ｃｏを０．０１〜８質量％又はＧｅを
０．０１〜１質量％又はＲｈを０．０１〜０．８４質量
％、残部が金及び不可避不純物からなる組成を有し、常
温引張強度が３５０〜１５００ＭＰａであることを特徴
とする半導体素子用ボンディングワイヤ。1. A composition having 0.01 to 8% by mass of Co, 0.01 to 1% by mass of Ge or 0.01 to 0.84% by mass of Rh, and the balance being gold and unavoidable impurities, A bonding wire for a semiconductor device, which has a tensile strength at room temperature of 350 to 1500 MPa. 【請求項２】 更にＮｉ，Ａｌ，Ｓｂから選ばれる少な
くとも１種を０．０１〜１質量％含有することを特徴と
する請求項１記載の半導体素子用ボンディングワイヤ。2. The bonding wire for a semiconductor element according to claim 1, further comprising 0.01 to 1 mass% of at least one selected from Ni, Al and Sb. 【請求項３】 更にＣａ，Ｂｅ，Ｙ，Ｌａ，Ｅｕ，Ｇｄ
から選ばれる少なくとも１種を１〜５００質量ｐｐｍ含
有することを特徴とする請求項１又は請求項２記載の半
導体素子用ボンディングワイヤ。3. Ca, Be, Y, La, Eu, Gd
The bonding wire for a semiconductor element according to claim 1 or 2, wherein the bonding wire contains at least one selected from 1 to 500 mass ppm. 【請求項４】 ワイヤの外周部に金、銅、銀から選ばれ
る１種が被覆されていることを特徴とする請求項１〜請
求項３のいずれかに記載の半導体素子用ボンディングワ
イヤ。4. The bonding wire for a semiconductor element according to claim 1, wherein an outer peripheral portion of the wire is coated with one kind selected from gold, copper and silver. 【請求項５】 少なくともＣｏを０．０１〜８質量％又
はＧｅを０．０１〜１質量％又はＲｈを０．０１〜０．
８４質量％含有する金合金材料に冷間加工及びアニール
処理を施す半導体素子用ボンディングワイヤの製造方法
であって、さらに上記材料に溶体化処理及び時効処理を
施すことを特徴とする半導体素子用ボンディングワイヤ
の製造方法。5. At least 0.01 to 8% by mass of Co or 0.01 to 1% by mass of Ge or 0.01 to 0.
A method for manufacturing a bonding wire for a semiconductor device, which comprises subjecting a gold alloy material containing 84% by mass to cold working and annealing treatment, the method further comprising subjecting the material to solution treatment and aging treatment. Wire manufacturing method.
JP2001244585A 2001-08-10 2001-08-10 Bonding wire and manufacturing method therefor Pending JP2003059964A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032643A (en) * 2004-07-15 2006-02-02 Sumitomo Bakelite Co Ltd Semiconductor unit
JP2008254056A (en) * 2007-04-09 2008-10-23 Sumitomo Metal Mining Co Ltd Method for producing base material for bonding wire, and bonding wire
JP4860004B1 (en) * 2011-02-28 2012-01-25 タツタ電線株式会社 Bonding wire and manufacturing method thereof
JP5001455B1 (en) * 2011-11-21 2012-08-15 タツタ電線株式会社 Bonding wire and manufacturing method thereof
WO2014073555A1 (en) * 2012-11-07 2014-05-15 タツタ電線株式会社 Bonding wire
JP2020117371A (en) * 2019-01-25 2020-08-06 東京特殊電線株式会社 Wire rod for roll-winding lead wire, and manufacturing method of lead wire
WO2024014268A1 (en) * 2022-07-14 2024-01-18 田中電子工業株式会社 Bonding wire for light-emitting diode (led) and manufacturing method for bonding wire for led

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JPH104115A (en) * 1996-06-17 1998-01-06 Sumitomo Metal Mining Co Ltd Bonding wire
JPH10313018A (en) * 1997-05-12 1998-11-24 Sumitomo Metal Mining Co Ltd Bonding wire
JPH10321662A (en) * 1997-05-19 1998-12-04 Sumitomo Metal Mining Co Ltd Bonding wire
JPH1145902A (en) * 1997-07-25 1999-02-16 Sumitomo Metal Mining Co Ltd Bonding wire
JPH11186314A (en) * 1997-12-17 1999-07-09 Sumitomo Metal Mining Co Ltd Bonding wire

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH104115A (en) * 1996-06-17 1998-01-06 Sumitomo Metal Mining Co Ltd Bonding wire
JPH10313018A (en) * 1997-05-12 1998-11-24 Sumitomo Metal Mining Co Ltd Bonding wire
JPH10321662A (en) * 1997-05-19 1998-12-04 Sumitomo Metal Mining Co Ltd Bonding wire
JPH1145902A (en) * 1997-07-25 1999-02-16 Sumitomo Metal Mining Co Ltd Bonding wire
JPH11186314A (en) * 1997-12-17 1999-07-09 Sumitomo Metal Mining Co Ltd Bonding wire

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032643A (en) * 2004-07-15 2006-02-02 Sumitomo Bakelite Co Ltd Semiconductor unit
JP4513440B2 (en) * 2004-07-15 2010-07-28 住友ベークライト株式会社 Semiconductor device
JP2008254056A (en) * 2007-04-09 2008-10-23 Sumitomo Metal Mining Co Ltd Method for producing base material for bonding wire, and bonding wire
JP4860004B1 (en) * 2011-02-28 2012-01-25 タツタ電線株式会社 Bonding wire and manufacturing method thereof
JP5001455B1 (en) * 2011-11-21 2012-08-15 タツタ電線株式会社 Bonding wire and manufacturing method thereof
WO2014073555A1 (en) * 2012-11-07 2014-05-15 タツタ電線株式会社 Bonding wire
JP2014096403A (en) * 2012-11-07 2014-05-22 Tatsuta Electric Wire & Cable Co Ltd Bonding wire
JP2020117371A (en) * 2019-01-25 2020-08-06 東京特殊電線株式会社 Wire rod for roll-winding lead wire, and manufacturing method of lead wire
JP7264326B2 (en) 2019-01-25 2023-04-25 東京特殊電線株式会社 WIRE ROD FOR ROLL Wound LEAD WIRE AND METHOD FOR MANUFACTURING LEAD WIRE
WO2024014268A1 (en) * 2022-07-14 2024-01-18 田中電子工業株式会社 Bonding wire for light-emitting diode (led) and manufacturing method for bonding wire for led

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