JP2779683B2 - Bonding wire for semiconductor device - Google Patents
Bonding wire for semiconductor deviceInfo
- Publication number
- JP2779683B2 JP2779683B2 JP2062154A JP6215490A JP2779683B2 JP 2779683 B2 JP2779683 B2 JP 2779683B2 JP 2062154 A JP2062154 A JP 2062154A JP 6215490 A JP6215490 A JP 6215490A JP 2779683 B2 JP2779683 B2 JP 2779683B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- strength
- bonding wire
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体素子の電極と外部リードを接続する
ために使用するボンディングワイヤに関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a bonding wire used to connect an electrode of a semiconductor element to an external lead.
（従来の技術） 従来、半導体素子の電極を外部リードに接続するため
に、Auに微量のCa,Be,Geなどを含有させたAu合金の25〜
50μｍのワイヤ、すなわちボンディングワイヤが用いら
れている。(Prior art) Conventionally, in order to connect the electrodes of a semiconductor element to external leads, Au alloys containing a small amount of Ca, Be, Ge, etc.
A 50 μm wire, that is, a bonding wire is used.
このワイヤを用いて半導体素子とリードフレームを接
続する際に、両者とも超音波による圧接か、半導体素子
の電極については、アークで先端をボールアップした後
に熱圧着する方法がとられている。When a semiconductor element and a lead frame are connected by using this wire, a method of applying pressure by ultrasonic waves to both of them, or a method of thermocompression bonding an electrode of the semiconductor element after ball-up the tip by an arc is used.
しかしながら、近年ICのより一層の小型化，集積化が
図られ、電極数の増加のため、現状ワイヤ径では電極の
占める面積が大きくなりすぎる事が問題視されてきた。However, in recent years, further miniaturization and integration of ICs have been achieved, and an increase in the number of electrodes has led to a problem that the area occupied by the electrodes with the current wire diameter becomes too large.
この問題を解決するためにワイヤ径を細くしたので
は、配線時及び使用中の断線の割合が高くなり、実用に
供し得ない。そのため現状ワイヤでは、ボンディングワ
イヤの特性としては線径20μｍ程度が限界であるとされ
ている。If the diameter of the wire is reduced in order to solve this problem, the rate of disconnection during wiring and during use increases, which is not practical. Therefore, in the current wire, it is said that the characteristic of the bonding wire is a wire diameter of about 20 μm as a limit.
（発明が解決しようとする課題） 特開昭56−49534号公報及び特開昭56−49535号公報で
は、Ptを30wt％まで、あるいはPdを40wt％までAuに加え
ることによりワイヤの高強度化をはかり、細線化を可能
にするという提案もあるが、合金元素の含有量がある限
界を超えると、接合時に形成するボールの硬さが増し、
熱圧着に必要な荷重が大きくなり、ICのシリコンチップ
に損傷を与える等の問題が起きる。(Problems to be Solved by the Invention) In JP-A-56-49534 and JP-A-56-49535, the strength of a wire is increased by adding up to 30 wt% of Pt or up to 40 wt% of Pd to Au. Although there is a proposal to measure the thickness, it is possible to make the wire thinner, but when the content of the alloy element exceeds a certain limit, the hardness of the ball formed at the time of joining increases,
The load required for thermocompression bonding increases, causing problems such as damaging the silicon chip of the IC.
特開昭60−15958号公報では、Alに異種元素を混入し
た電極配線に対して良好な熱圧着性を有するボンディン
グワイヤとして、Au基の合金ワイヤが提案されている
が、これも同様の問題があり、従来から採用されている
IC、及び接合方法を特別に変更することなく、ICの小型
化、高密度化がはかれる新しいボンディングワイヤが求
められている。Japanese Patent Application Laid-Open No. 60-15958 proposes an Au-based alloy wire as a bonding wire having good thermocompression bonding property for an electrode wiring in which a different element is mixed with Al. There is a traditional adoption
There is a need for a new bonding wire that can reduce the size and density of an IC without specially changing the IC and the bonding method.
本発明は、ボンディングワイヤの線径をこれまでより
も細くしても従来のワイヤと同じ信頼性を持ったワイヤ
を提供することを目的とし、また本発明の他の目的は、
製造時においても強度がつよく、極細線にすることが可
能で、接合性及び接合時の破断強度にすぐれた断線の少
ない半導体素子用ボンディングワイヤを提供するもので
ある。An object of the present invention is to provide a wire having the same reliability as a conventional wire even if the wire diameter of a bonding wire is made thinner than before, and another object of the present invention is to
An object of the present invention is to provide a bonding wire for a semiconductor element which has high strength even at the time of manufacturing, can be formed into an extremely thin wire, and has excellent bonding properties and excellent breaking strength at the time of bonding and has few disconnections.
（課題を解決するための手段） 本発明の要旨は下記のとおりである。(Means for Solving the Problems) The gist of the present invention is as follows.
（１） Cuを１〜5wt％含有し、残部をAuとした組成を
有し、線径が20μｍ以下で破断強度が30kg/mm2以上、破
断伸びが１〜８％であることを特徴とする半導体素子用
ボンディングワイヤ。(1) It has a composition containing 1 to 5% by weight of Cu, the balance being Au, a wire diameter of 20 μm or less, a breaking strength of 30 kg / mm 2 or more, and a breaking elongation of 1 to 8%. Bonding wires for semiconductor devices.
（２） Cuを１〜5wt％と、Ca,Ge、Be,La,Inの１種また
は２種以上を合計で0.0003〜0.001wt％含み、残部をAu
とした組成を有し、線径が20μｍ以下で破断強度が30kg
/mm2以上、破断伸び１〜８％であることを特徴とする半
導体素子用ボンディングワイヤ。(2) Cu is contained in an amount of 1 to 5% by weight and one or more of Ca, Ge, Be, La, and In in a total of 0.0003 to 0.001% by weight, with the balance being Au
The composition has a wire diameter of 20 μm or less and a breaking strength of 30 kg.
/ mm 2 or more, and a breaking elongation of 1 to 8%.
（作 用） 以下作用とともに、本発明を詳述する。(Operation) The present invention will be described in detail along with the operation.
本発明の半導体素子用ボンディングワイヤにおいて、
AuにCuを１〜５％未満含有させた理由は、CuがAuに完全
に固溶することにより母線の強度が向上するばかりか、
接合強度も高くなるからで、これまでのワイヤではなか
なか難しかった線径20μｍ以下の細線にしても、Cuが１
％以上含有されていれば破断強度30kg/mm2以上を満足す
ることが出来る。In the semiconductor device bonding wire of the present invention,
The reason that Cu contained less than 1 to 5% in Au is not only that the solid solution of Cu in Au improves the strength of the bus bar,
Since the bonding strength is also high, even if it is a thin wire with a wire diameter of 20 μm or less, which has been difficult with conventional wires, Cu
%, The breaking strength of 30 kg / mm 2 or more can be satisfied.
この特徴は、Cuの含有量とともに強度の上昇が認めら
れるが、５％を越えると耐食性に問題を生じ、長時間を
経た後での信頼性を損なう。またCuの含有量が５％に達
すると、接合時に形成するボールの硬さが増加し、熱圧
着に必要な荷重が大きくなることから、シリコンチップ
に損傷を与えるためである。With this feature, an increase in strength is observed with the content of Cu, but if it exceeds 5%, a problem occurs in corrosion resistance and reliability after a long time is impaired. Also, when the content of Cu reaches 5%, the hardness of the ball formed at the time of joining increases, and the load required for thermocompression bonding increases, thereby damaging the silicon chip.
なお原料となるAu,Cuは、不純物の含有量が多いと製
品の特性が不安定となることと、細線化や接合時に破断
の原因となるので、99.9％以上の高純度とすることが望
ましい。Au and Cu as raw materials have a high purity of 99.9% or more, because if the content of impurities is large, the characteristics of the product will be unstable and it will cause breakage during thinning and joining. .
Cuの含有によってこのような効果が得られるのは、固
溶体強化と規則格子の生成によっていると推察される。It is presumed that such effects are obtained by the inclusion of Cu due to solid solution strengthening and formation of ordered lattices.
伸線時に導入された加工歪を除き、適度な延性と十分
な強度を保持するために、200〜600℃の温度と適切な時
間の熱処理を行うことが望ましい。It is desirable to perform a heat treatment at a temperature of 200 to 600 ° C. and an appropriate time in order to maintain appropriate ductility and sufficient strength, excluding processing strain introduced during wire drawing.
これは伸線ままの細線は延性がなく、また加工歪のた
めカールが強く使用に供せないことがあるので、通常は
焼きなまし熱処理を行う。This is because the thin wire as drawn is not ductile, and the curl may be so strong that it cannot be used due to processing strain. Therefore, annealing heat treatment is usually performed.
この熱処理は温度が高いほど、また長時間であるほど
強度が低下し、延性が大きくなるのが一般的であるが、
線径と成分に応じた熱処理条件を選ぶ必要がある。また
この熱処理によって組織の再結晶，粒成長が進行する
が、結晶粒径が線径に近ずくと、強度，延性とも著しく
低下するため、熱処理条件の選定は細径ワイヤの場合は
特に重要である。This heat treatment generally decreases in strength and increases in ductility as the temperature increases and as the time increases.
It is necessary to select heat treatment conditions according to the wire diameter and the components. The heat treatment promotes recrystallization and grain growth of the structure. However, when the crystal grain size approaches the wire diameter, both the strength and ductility are significantly reduced. Therefore, the selection of heat treatment conditions is particularly important for small diameter wires. is there.
第１図は、Cuを含有した線径10μｍのワイヤで30kgf/
mm2以上の破断強度を確保する熱処理条件を示したグラ
フである。実線は400℃、破線は200℃で処理した場合を
示している。Fig. 1 shows a 30kgf /
4 is a graph showing heat treatment conditions for ensuring a breaking strength of not less than mm 2 . The solid line indicates the case where the treatment was performed at 400 ° C, and the broken line indicates the case where the treatment was performed at 200 ° C.
なお破断伸びを１〜８％に限定したのは、１％より低
いと接合中に破断しやすく、８％を越えると2nd接合後
の切断時にテイル残りが発生し、連続接合に支障をきた
すためである。Note that the breaking elongation is limited to 1 to 8% because if it is lower than 1%, it is easy to break during joining, and if it exceeds 8%, a tail remains at the time of cutting after 2nd joining, which hinders continuous joining. It is.
また特に、従来の金ボンディングワイヤの添加にも用
いられているCa、Be、Ge、La、Inの添加は、本発明のボ
ンディングワイヤの接合強度を向上させる。この目的の
ために、これらの元素の１種または２種以上を合計で0.
0003〜0.001wt％の範囲で添加することができる。In particular, the addition of Ca, Be, Ge, La, and In, which is also used for the addition of the conventional gold bonding wire, improves the bonding strength of the bonding wire of the present invention. For this purpose, one or more of these elements are added in a total of 0,0.
0003 to 0.001 wt% can be added.
本発明のボンディングワイヤは、真空溶解炉等を用い
て化学成分のAu合金を溶解し鍛造した後、線引，熱処理
等を行って所望の線径のワイヤに製造される。The bonding wire of the present invention is manufactured into a wire having a desired wire diameter by drawing and heat-treating after melting and forging an Au alloy of a chemical component using a vacuum melting furnace or the like.
（実施例） つぎに本発明の効果を明瞭にする実施例を説明する。(Example) Next, an example for clarifying the effects of the present invention will be described.
純度99.99％の高純度Auと純度99.9％の高純度Cuを用
い、第１表に示す元素を添加した材料を真空溶解炉で熔
製し、線引き，熱処理をおこなった。線径10μｍ、一部
は12μm,15μm,19μm,20μｍである。Using high-purity Au of 99.99% purity and high-purity Cu of 99.9% purity, materials to which the elements shown in Table 1 were added were melted in a vacuum melting furnace, and then drawn and heat-treated. The wire diameter is 10 μm, and some are 12 μm, 15 μm, 19 μm, and 20 μm.
引張試験は第２図に示すように、Siチップ１とリード
フレーム２に接合したボンディングワイヤ３を図示のよ
うに矢印方向に引っ張り、そのときの破断強度を測定し
た。ワイヤの破断荷重、伸びと接合強度を比較材と対比
して第１表に示す。第１表から明らかなように、本発明
例のワイヤは細径にもかかわらず破断強度及び接合強度
が優れていることがわかる。また従来のボンディングワ
イヤと同様の線径で使用すれば、より強度の高いワイヤ
が得られる。In the tensile test, as shown in FIG. 2, the bonding wire 3 bonded to the Si chip 1 and the lead frame 2 was pulled in the direction of the arrow as shown, and the breaking strength at that time was measured. Table 1 shows the breaking load, elongation and bonding strength of the wire in comparison with the comparative material. As is clear from Table 1, the wire of the present invention is excellent in breaking strength and bonding strength despite its small diameter. If the wire diameter is the same as that of a conventional bonding wire, a wire having higher strength can be obtained.
（発明の効果） 以上説明したごとく本発明によるボンディングワイヤ
は、20μｍ以下の細径にもかかわらず破断強度ならびに
接合強度に優れ、またワイヤにカールが残ったり、また
接合に際してICチップに損傷を与えることもなく、半導
体素子の一層の小型化，集積化に対応できるワイヤであ
る。 (Effects of the Invention) As described above, the bonding wire according to the present invention is excellent in breaking strength and bonding strength despite its small diameter of 20 μm or less, and remains curled in the wire and damages the IC chip during bonding. In addition, the wire can cope with further miniaturization and integration of the semiconductor element.
第１図はCuを含有したワイヤの破断強度を確保する熱処
理条件を示したグラフ、第２図はボンディングワイヤの
引張試験要領を示す図面である。 １……Siチップ、２……リードフレーム、３……ボンデ
ィングワイヤFIG. 1 is a graph showing heat treatment conditions for ensuring the breaking strength of a wire containing Cu, and FIG. 2 is a drawing showing a procedure for a tensile test of a bonding wire. 1 ... Si chip, 2 ... Lead frame, 3 ... Bonding wire
───────────────────────────────────────────────────── フロントページの続き (72)発明者 金森 孝史 東京都港区虎ノ門１丁目７番12号 沖電 気工業株式会社内 (72)発明者 井口 泰男 東京都港区虎ノ門１丁目７番12号 沖電 気工業株式会社内 (72)発明者 荒尾 義範 東京都港区虎ノ門１丁目７番12号 沖電 気工業株式会社内 (72)発明者 山下 俊光 東京都港区虎ノ門１丁目７番12号 沖電 気工業株式会社内 (56)参考文献 特開 昭60−15958（ＪＰ，Ａ) 特開 昭64−87734（ＪＰ，Ａ) 特開 平２−215140（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) C22C 5/02 H01L 21/60 301──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takashi Kanamori 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd. (72) Inventor Yasuo Iguchi 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd. (72) Inventor Yoshinori Arao 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd. (72) Inventor Toshimitsu Yamashita 1-7-12, Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd. (56) References JP-A-60-15958 (JP, A) JP-A-64-87734 (JP, A) JP-A-2-215140 (JP, A) (58) Field (Int.Cl. 6 , DB name) C22C 5/02 H01L 21/60 301
Claims (2)
成を有し、線径が20μｍ以下で破断強度が30kg/mm2以
上、破断伸びが１〜８％であることを特徴とする半導体
素子用ボンディングワイヤ。1. A composition containing 1 to 5 wt% of Cu and the balance being Au, having a wire diameter of 20 μm or less, a breaking strength of 30 kg / mm 2 or more, and a breaking elongation of 1 to 8%. Characteristic bonding wires for semiconductor elements.
または２種以上を合計で0.0003〜0.001wt％含み、残部
をAuとした組成を有し、線径が20μｍ以下で破断強度が
30kg/mm2以上、破断伸び１〜８％であることを特徴とす
る半導体素子用ボンディングワイヤ。2. A wire containing 1 to 5 wt% of Cu and one or more of Ca, Ge, Be, La, and In in a total amount of 0.0003 to 0.001 wt%, with the balance being Au. Diameter less than 20μm and breaking strength
A bonding wire for a semiconductor device, wherein the bonding wire has a breaking elongation of at least 30 kg / mm 2 and a breaking elongation of 1 to 8%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2062154A JP2779683B2 (en) | 1990-03-13 | 1990-03-13 | Bonding wire for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2062154A JP2779683B2 (en) | 1990-03-13 | 1990-03-13 | Bonding wire for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03264628A JPH03264628A (en) | 1991-11-25 |
| JP2779683B2 true JP2779683B2 (en) | 1998-07-23 |
Family
ID=13191909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2062154A Expired - Lifetime JP2779683B2 (en) | 1990-03-13 | 1990-03-13 | Bonding wire for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2779683B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5945065A (en) * | 1996-07-31 | 1999-08-31 | Tanaka Denshi Kogyo | Method for wedge bonding using a gold alloy wire |
| SG190370A1 (en) * | 2011-03-01 | 2013-06-28 | Tanaka Electronics Ind | Gold alloy bonding wire |
| JP2020136331A (en) * | 2019-02-14 | 2020-08-31 | 株式会社日産アーク | Semiconductor device and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6015958A (en) * | 1983-07-08 | 1985-01-26 | Hitachi Ltd | Semiconductor device |
| JP2613224B2 (en) * | 1987-09-29 | 1997-05-21 | 田中貴金属工業株式会社 | Gold fine wire material |
| JP2701419B2 (en) * | 1989-02-16 | 1998-01-21 | 三菱マテリアル株式会社 | Gold alloy fine wire for semiconductor element and bonding method thereof |
-
1990
- 1990-03-13 JP JP2062154A patent/JP2779683B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03264628A (en) | 1991-11-25 |
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