JPH10313018A - Bonding wire - Google Patents

Bonding wire

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Publication number
JPH10313018A
JPH10313018A JP9120031A JP12003197A JPH10313018A JP H10313018 A JPH10313018 A JP H10313018A JP 9120031 A JP9120031 A JP 9120031A JP 12003197 A JP12003197 A JP 12003197A JP H10313018 A JPH10313018 A JP H10313018A
Authority
JP
Japan
Prior art keywords
wire
bonding
bonding wire
semiconductor device
satisfactorily
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9120031A
Other languages
Japanese (ja)
Inventor
Juichi Shimizu
寿一 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP9120031A priority Critical patent/JPH10313018A/en
Publication of JPH10313018A publication Critical patent/JPH10313018A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45657—Cobalt (Co) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

PROBLEM TO BE SOLVED: To make a bonding wire suitable for multiple semiconductor device in excellent conductivity hardly developing defective deformation in the case of assembling the semiconductor device, by a method wherein the bonding wire contains a specific amount of Co and residual amount containing Au and inevitable impurities. SOLUTION: Co is an element having the deposition intensity to Au enabling to increase the wire strength without deteriorating the conductivity so much by depositing the fine deposit in the Au. Especially, it is recommended to specify the Co concentration to be 0.5-10%, because, if it does not exceed 0.5%, the deposit amount is too little to satisfactorily enhance the effect of increasing the wire intensity, on the contrary, if it exceeds 10%, the alloy workability is deteriorated by making the fine wires hardly processed. Besides, in order to satisfactorily display the wire characteristics, it is recommended to perform the annealing step for Co deposition in addition to the solution annealing step. Through these procedures, the high wire deformation preventiveness can be satisfactorily achieved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は半導体素子上の電極
と外部リードとを接続するために用いるボンディングワ
イヤに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire used for connecting an electrode on a semiconductor device to an external lead.

【０００２】[0002]

【従来の技術】ＩＣ、ＬＳＩなどの半導体素子の電極と
外部リードとを接続するため０．０２〜０．１ｍｍの範
囲の直径を有するボンディングワイヤが用いられてい
る。ボンディングワイヤには良好な導電性、半導体素子
の電極や外部リードとの接合性、使用雰囲気中での耐環
境性が要求される。そのため、ボンディングワイヤとし
てはＡｌ，Ａｕ，Ｃｕ等の純金属もしくはその合金が用
いられてきた。2. Description of the Related Art A bonding wire having a diameter in a range of 0.02 to 0.1 mm is used for connecting an electrode of a semiconductor element such as an IC or an LSI to an external lead. Bonding wires are required to have good conductivity, bondability to electrodes of semiconductor elements and external leads, and environmental resistance in a use atmosphere. Therefore, a pure metal such as Al, Au, or Cu or an alloy thereof has been used as the bonding wire.

【０００３】近年では低コスト化という観点から樹脂を
用いた半導体パッケージが多用されてきており、そのた
め耐環境性に優れるＡｕ系ワイヤが最も多く用いられて
いる。In recent years, semiconductor packages using a resin have been widely used from the viewpoint of cost reduction, and therefore, Au-based wires having excellent environmental resistance have been used most frequently.

【０００４】従来より用いられているＡｕ系ワイヤの多
くはＡｕが９９．９９重量％（以下単に％と記す）以上
の純度を有する軟質のものであった。[0004] Many Au-based wires conventionally used are soft wires having a purity of Au of 99.99% by weight (hereinafter simply referred to as%) or more.

【０００５】最近の半導体デバイスの発展はパッケージ
の多ピン化をもたらし、その結果としてより細いワイヤ
を狭い間隔や長い距離でのワイヤボンディングを行う必
要性が増してきた。しかしながら、従来のボンディング
ワイヤはワイヤ強度が弱いために、半導体デバイス組み
立て工程中において樹脂を封入する際に、ワイヤの変形
不良が頻発化し、半導体デバイスの組み立て収率が大幅
に低下するという問題があった。[0005] Recent developments in semiconductor devices have resulted in an increase in the number of pins in packages, and as a result, the need to perform wire bonding of finer wires at narrow intervals and long distances has increased. However, since conventional bonding wires have low wire strength, when encapsulating resin during the semiconductor device assembling process, there is a problem that defective deformation of the wire occurs frequently, and the assembling yield of the semiconductor device is greatly reduced. Was.

【０００６】一般に、ワイヤ強度を向上させるためには
添加元素量を増せばよいが、例えば特公昭６２−２３４
５４、特公昭６２−２３４５５等で示されているＰｔ，
Ｐｄといった貴金属元素等を多量に添加して高強度化し
た場合には、ワイヤの導電性が大きく低下する等の問題
を生じ、多ピンパッケージ用のワイヤとしては必ずしも
好適ではなかった。In general, in order to improve the wire strength, the amount of the added element may be increased.
54, Pt, described in JP-B-62-23455 and the like.
When a large amount of a noble metal element such as Pd is added to increase the strength, problems such as a significant decrease in the conductivity of the wire occur, and the wire is not necessarily suitable as a wire for a multi-pin package.

【０００７】[0007]

【発明が解決しようとする課題】本発明の課題は、かか
る点に鑑み、多ピン半導体デバイス用として好適な高強
度ボンディングワイヤを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a high-strength bonding wire suitable for a multi-pin semiconductor device.

【０００８】[0008]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明のボンディングワイヤは、Ｃｏを０．５〜
１０%を含み、残部がＡｕ及び不可避不純物からなるも
のであり、好ましくはＣｏを０．５〜１０%を含み、さ
らにＣａ，Ｓｒ ，Ｙ，Ｌａ，Ｃｅの１種以上を合計量
で０．０００１〜０．０１％含み、残部がＡｕ及び不可
避不純物からなるものである。In order to achieve the above object, a bonding wire according to the present invention has a Co content of 0.5 to 0.5%.
10%, with the balance being Au and unavoidable impurities, preferably containing 0.5 to 10% of Co, and further containing at least one of Ca, Sr, Y, La and Ce in a total amount of 0.1%. 0001 to 0.01%, with the balance being Au and unavoidable impurities.

【０００９】[0009]

【発明の実施の形態】以下に本発明の構成の詳細につい
て説明する。Ｃｏは金に対し析出強化性を有する元素で
あり、金中に微細析出物を析出させることにより、導電
性をあまり低下させずにワイヤ強度を向上させることが
可能でなる。Ｃｏの濃度を０．５〜１０％としたのは、
０．５％未満では析出物の量が少なすぎて強度向上の効
果が不十分であり、逆に１０％を超すと合金の加工性が
低下して極細線まで加工するのが難しくなるからであ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the configuration of the present invention will be described below. Co is an element having precipitation strengthening properties with respect to gold. By precipitating fine precipitates in gold, it is possible to improve wire strength without significantly lowering conductivity. The reason for setting the concentration of Co to 0.5 to 10% is that
If the amount is less than 0.5%, the amount of the precipitate is too small, and the effect of improving the strength is insufficient. is there.

【００１０】Ｃａ，Ｓｒ ，Ｙ，Ｌａ，Ｃｅはワイヤの
耐熱性を向上するための添加元素であり、 Ｃａ，Ｓｒ
，Ｙ，Ｌａ，Ｃｅの１種以上を合量で０．０００１〜
０．０１％添加するとしたのは、０．０００１％未満の
添加では耐熱性向上の効果が不十分であり、逆に０．０
１％を超えると合金の加工性が低下するからである。[0010] Ca, Sr, Y, La and Ce are additional elements for improving the heat resistance of the wire.
, Y, La, and Ce in a total amount of 0.0001 to
The reason for adding 0.01% is that if less than 0.0001%, the effect of improving heat resistance is insufficient, and conversely, 0.0%
If it exceeds 1%, the workability of the alloy decreases.

【００１１】本発明のワイヤの特性を十分に引き出すに
は、溶体化処理に加えて、Ｃｏの析出のための焼鈍を施
すことが望ましい。溶体化処理の条件としては例えば９
５０℃で１時間の保持が好適であり、また焼鈍条件とし
ては２００〜４００℃で１〜４時間程度の保持が好まし
い。なお、焼鈍は製造工程のどこで実施しても問題は無
く、さらには半導体チップへの損傷が発生しなければワ
イヤボンディング後に実施してもかまわない。その場合
にも、高いワイヤ変形防止性は十分に発揮され、本発明
の特性を損ねることはない。In order to sufficiently bring out the characteristics of the wire of the present invention, it is desirable to perform annealing for precipitation of Co in addition to the solution treatment. The conditions for the solution treatment are, for example, 9
Holding at 50 ° C. for 1 hour is suitable, and annealing conditions are preferably holding at 200 to 400 ° C. for about 1 to 4 hours. Note that there is no problem in performing the annealing anywhere in the manufacturing process, and furthermore, the annealing may be performed after the wire bonding as long as the semiconductor chip is not damaged. Even in this case, high wire deformation prevention is sufficiently exhibited, and the characteristics of the present invention are not impaired.

【００１２】[0012]

【実施例】次に実施例を用いて本発明をさらに説明す
る。Next, the present invention will be further described with reference to examples.

【００１３】（実施例１〜１０）純度９９．９９９％の
高純度金、電気Ｃｏ、及び所定の添加元素を１％含む金
母合金を用いて、表１に示す組成の金合金を溶解鋳造し
た。(Examples 1 to 10) A gold alloy having a composition shown in Table 1 was melt-cast using high-purity gold having a purity of 99.999%, electric Co, and a gold mother alloy containing 1% of a predetermined additive element. did.

【００１４】 得られた鋳塊を９５０℃で１時間保持して溶体化処理を
施した後に、溝ロール加工を施し、さらにダイヤモンド
ダイスを用いた伸線加工を実施して直径０．０２ｍｍの
合金線とした。[0014] The obtained ingot was held at 950 ° C. for 1 hour, subjected to a solution treatment, subjected to groove roll processing, and further subjected to wire drawing using a diamond die to obtain an alloy wire having a diameter of 0.02 mm. .

【００１５】得られた合金線に熱処理を施して特性を調
整し、試料とした。[0015] The obtained alloy wire was subjected to a heat treatment to adjust the characteristics, thereby obtaining a sample.

【００１６】このように作製された試料の評価として、
ワイヤ強度を引張り試験により求めた。As an evaluation of the sample thus produced,
The wire strength was determined by a tensile test.

【００１７】そして、導電性については、直流４端子法
によって比抵抗を求めた。As for the conductivity, the specific resistance was determined by a DC four-terminal method.

【００１８】また、ボンディング接合性すなわちボンデ
ィングワイヤと半導体素子の電極及び外部リードとの接
合性は、ステージ温度を３００℃に設定したウェッジボ
ンディング機を用い、超音波熱圧着方式によりボンディ
ングしたワイヤについて、フックを引っかけて引張り試
験を実施した場合に、破断がワイヤの部分で起こった場
合を良、接合部で破断した場合を不良と評価した。The bonding property, that is, the bonding property between the bonding wire and the electrode of the semiconductor element and the external lead is determined by using an ultrasonic thermocompression bonding method using a wedge bonding machine with a stage temperature set to 300 ° C. When the hook was hooked and a tensile test was performed, the case where the break occurred at the wire portion was evaluated as good, and the case where the break occurred at the joint was evaluated as poor.

【００１９】さらに、ボンディング接合部の経時変化に
ついては、上記と同様な方法でワイヤボンディングした
試料を２００℃で１００時間保持した後に同様のプル試
験を実施して評価した。Further, the change with time in the bonding portion was evaluated by holding the sample wire-bonded in the same manner as described above at 200 ° C. for 100 hours and then performing the same pull test.

【００２０】樹脂の封入抵抗によるワイヤ変形について
は、上記と同様な方法で５ｍｍ間隔にワイヤボンディン
グして得た試料についてモールド機（トランスファーモ
ールド型）によりエポキシ樹脂（住友ベークライト製、
ＥＭＥ−６３００）を金型温度１８０℃、射出圧１００
Ｋｇ／ｃｍ２の条件でモールドした時のワイヤの流れ量
をＸ線透過写真から求め、その値で評価した。なお、ワ
イヤ流れ量は樹脂モールド前後のワイヤの位置のずれ量
で示した。With respect to wire deformation due to resin encapsulation resistance, epoxy resin (manufactured by Sumitomo Bakelite, manufactured by Sumitomo Bakelite Co., Ltd.) was used for a sample obtained by wire bonding at 5 mm intervals in the same manner as described above, using a molding machine (transfer mold type).
EME-6300) at a mold temperature of 180 ° C. and an injection pressure of 100
The flow rate of the wire when molded under the condition of Kg / cm2 was obtained from an X-ray transmission photograph, and the value was evaluated. The amount of wire flow was indicated by the amount of displacement of the wire position before and after the resin mold.

【００２１】表２に上記評価の結果を示した。Table 2 shows the results of the above evaluation.

【００２２】 表２において、直後とはボンディング直後のことであ
り、保管後とは２００℃に１００時間保持後のことであ
る。[0022] In Table 2, “immediately after” means immediately after bonding, and “after storage” means after holding at 200 ° C. for 100 hours.

【００２３】（比較例１〜２）市販材（比較例１）と比
較材を用いた以外は実施例と同様にして評価した。表３
に金合金の組成、表４に特性を示した。(Comparative Examples 1 and 2) Evaluations were made in the same manner as in Examples except that a commercially available material (Comparative Example 1) and a comparative material were used. Table 3
Shows the composition of the gold alloy, and Table 4 shows the characteristics.

【００２４】 表２、４において明らかなように、本発明によるボンデ
ィングワイヤは、市販品に比較して強度が高く、ワイヤ
流れ量が小さい。また、比較材と比べると、比抵抗が小
さくて導電性が良好であり、かつワイヤボンディング性
にも問題の無いことがわかる。[0024] As is clear from Tables 2 and 4, the bonding wire according to the present invention has a higher strength and a smaller wire flow rate as compared with commercial products. In addition, it can be seen that, as compared with the comparative material, the specific resistance is small and the conductivity is good, and there is no problem in the wire bonding property.

【００２５】[0025]

【発明の効果】以上から明らかなように、本発明によ
り、半導体デバイス組み立て時におけるワイヤの変形不
良が起こりにくく、かつ導電性も良好である多ピン半導
体デバイス用として好適なボンディングワイヤを提供す
ることができる。As is apparent from the above, according to the present invention, it is possible to provide a bonding wire suitable for a multi-pin semiconductor device which is less likely to cause deformation of the wire when assembling the semiconductor device and has good conductivity. Can be.

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 Ｃｏを０．５〜１０%を含み、残部が
Ａｕ及び不可避不純物からなるボンディングワイヤ。1. A bonding wire containing 0.5 to 10% of Co and the balance of Au and unavoidable impurities. 【請求項２】 Ｃｏを０．５〜１０%を含み、さらに
Ｃａ，Ｓｒ ，Ｙ，Ｌａ，Ｃｅの１種以上を合計量で
０．０００１〜０．０１％含み、残部がＡｕ及び不可避
不純物からなるボンディングワイヤ。2. The composition contains 0.5 to 10% of Co, further contains 0.0001 to 0.01% in total of one or more of Ca, Sr, Y, La and Ce, with the balance being Au and inevitable impurities. Bonding wire consisting of
JP9120031A 1997-05-12 1997-05-12 Bonding wire Pending JPH10313018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9120031A JPH10313018A (en) 1997-05-12 1997-05-12 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9120031A JPH10313018A (en) 1997-05-12 1997-05-12 Bonding wire

Publications (1)

Publication Number Publication Date
JPH10313018A true JPH10313018A (en) 1998-11-24

Family

ID=14776199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9120031A Pending JPH10313018A (en) 1997-05-12 1997-05-12 Bonding wire

Country Status (1)

Country Link
JP (1) JPH10313018A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059964A (en) * 2001-08-10 2003-02-28 Tanaka Electronics Ind Co Ltd Bonding wire and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059964A (en) * 2001-08-10 2003-02-28 Tanaka Electronics Ind Co Ltd Bonding wire and manufacturing method therefor

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