JPH02170932A - Copper alloy having superior direct bonding property - Google Patents
Copper alloy having superior direct bonding propertyInfo
- Publication number
- JPH02170932A JPH02170932A JP32478388A JP32478388A JPH02170932A JP H02170932 A JPH02170932 A JP H02170932A JP 32478388 A JP32478388 A JP 32478388A JP 32478388 A JP32478388 A JP 32478388A JP H02170932 A JPH02170932 A JP H02170932A
- Authority
- JP
- Japan
- Prior art keywords
- copper alloy
- less
- weight
- alloy
- center line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 15
- 230000003746 surface roughness Effects 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 12
- 235000019592 roughness Nutrition 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体機器のリード材用銅合金に、ワイヤーボ
ンディング用リード線を直接接着（ダイレクトボンディ
ング）する事を可能にするダイレクトボンディング性の
良好な銅合金に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention has good direct bonding properties that enable lead wires for wire bonding to be directly bonded (direct bonding) to copper alloys for lead materials of semiconductor devices. related to copper alloys.
［従来の技術］
従来、半導体機器は、まず銅または銅合金のリード材用
素材を打抜き又はエツチングにより所定の形状に成形し
、次に、半導体素子の接合部分および半導体素子とリー
ド材とを金線等でワイヤーボンディングするために、リ
ード材の所定部分へメツキを行い、ついでメツキされた
部分へ半導体素子をダイボンドしさらに半導体素子とリ
ード材をワイヤーボンディング用リード線でワイヤーボ
ンディングを行い、最後にこれを封止して製品としてい
た。[Prior Art] Conventionally, semiconductor devices have been manufactured by first forming a copper or copper alloy lead material into a predetermined shape by punching or etching, and then molding the bonding portion of the semiconductor element and the semiconductor element and lead material with gold. In order to perform wire bonding with a wire, etc., a predetermined portion of the lead material is plated, then the semiconductor element is die-bonded to the plated part, the semiconductor element and the lead material are wire-bonded using a wire bonding lead wire, and finally, This was sealed and made into a product.
これから分かるように、リード材と半導体素子および半
導体素子とリード材との接合のためには、必ずメツキを
必要としていた。As can be seen, plating is always required to bond the lead material and the semiconductor element and the semiconductor element and the lead material.
ところがメツキ操作自体は、微小な個所へのメツキであ
るために、非常に高い精度を必要とし、メツキの良否が
ダイボンドおよびワイヤーボンドに直接影響を与えで、
場合により不良品が発生した。However, the plating operation itself requires extremely high precision because it involves plating minute spots, and the quality of the plating directly affects the die bond and wire bond.
In some cases, defective products occurred.
また半導体素子およびリード材との材質の関係および耐
久性、電導性、付る性などからみで、金または銀のメツ
キが行われているが、これが半導体機器の非常なコスト
高を招いた。In addition, gold or silver plating is performed due to the relationship between the materials of the semiconductor element and the lead material, as well as durability, conductivity, and adhesion, but this has led to extremely high costs for semiconductor devices.
このためメッキ厚やメツキ面積を減少させたり、また前
記金や銀にかえで、卑金属を用いることなどを検討して
いるが、あまり画期的な効果は上っていない。For this reason, attempts have been made to reduce the plating thickness and area, and to use base metals instead of gold and silver, but these efforts have not yielded any groundbreaking effects.
さらに半導体素子のダイボンドのみをペーストで代替さ
せて接合する技術が開発されで、半導体素子のダイボン
ドの際のメツキが一応不要となったが、あいかわらずリ
ード材と半導体素子とを金線で接合するワイヤーボンデ
ィングの為にはメツキが必要であり、工程数はいつこう
に減少せず、根本的な解決策にはなっていない。Furthermore, a technology has been developed that replaces only the die bonding of semiconductor elements with paste and bonding, and plating is no longer necessary when die bonding semiconductor elements, but wires that bond lead materials and semiconductor elements with gold wire still remain Plating is necessary for bonding, and the number of processes has not been reduced over time, so there is no fundamental solution.
ところで、ダイレクトボンディング性を改善させるべく
、過去にリードフレーム材料の観点から若干の検討は行
われている。例えば特公昭［ｉ２−４６０７１では材料
の表面粗さが最大高さ（Ｒ□１）で０．５μ四以下とす
る事、あるいはさらに析出物、介在物等の単一面積が３
Ｘ１０’■２以ドにする巾でダイレクトボンディング性
が改善されるりｆがわかっている。Incidentally, in order to improve direct bonding properties, some studies have been conducted in the past from the viewpoint of lead frame materials. For example, in Tokko Sho [i2-46071, the surface roughness of the material must be 0.5μ4 or less at the maximum height (R□1), or furthermore, the single area of precipitates, inclusions, etc.
It is known that the direct bondability is improved by increasing the width to X10'■2 or more.
［発明が解決しようとする課題〕
実際の製品に上記公知技術を適用した場合、要求される
信頼性が高いＩＣ５ＬＳ１．ＶＬＳ■製品としては、ま
だまだ満足できるレベルにはなっておらず、一部トラン
シスター用に使用されている現状である。[Problem to be solved by the invention] When the above-mentioned known technology is applied to an actual product, IC5LS1. As a VLS product, it has not yet reached a satisfactory level and is currently being used for some transistors.
従っで、ダイレクトボンディング性という観点から一層
の敗訴をはかり、トランジスターからＶＬＳ Ｉまでの
全ての半導体製品に適用できるリードフレーム用銅合金
が望まれている。Therefore, there is a need for a copper alloy for lead frames that can be applied to all semiconductor products from transistors to VLSIs, and which is even more effective in terms of direct bonding properties.
〔課題を解決するための手段］
本発明者らは、ダイレクトボンディング性に及ぼす種々
の材料因子について検討を行ったところ、材料の表面粗
さ規定はＲ□３では不十分であり、中心線平均粗さ（Ｒ
ａ）といった全体的な表面粗さのレベルの規定が必要で
あることを見出した。従来Ｒ、、、０，５μｍ以下とい
われていたが、一部Ｒ３，，０，５μ量を越えてもＲａ
がある値以下であれば優れたダイレクトボンディング性
を示す事等が判明した。[Means for Solving the Problems] The present inventors investigated various material factors that affect direct bonding properties, and found that R Roughness (R
It has been found that it is necessary to specify the level of overall surface roughness as in a). Conventionally, R was said to be less than 0.5 μm, but even if it exceeds R3,0.5 μm in some cases, Ra
It has been found that if the value is below a certain value, excellent direct bonding properties are exhibited.
さらに、材料の硬さもある値以上にしなければならない
事を見出した。Furthermore, we discovered that the hardness of the material must also exceed a certain value.
そこで、本発明はＣｒ０．１〜１．５重量％、Ｚ ｒ
０．０５〜１．０重量％の１種又は２種を含み、残部Ｃ
ｕ及び不６Ｉ避不純物からなる合金の）イ料表面を表面
硬さが）ｌｖ １４０以上で、かつ、表面粗さが中心線
平均粗さ（Ｒａ）で０．１５μ■以下、最大高さ（Ｒｍ
ａｘ）で０．８μｍ以下となるように調整することによ
り、ワイヤーボンディング用リード線を直接接む可能と
したことを特徴とするダイレクトボンディング性の良好
な銅合金およびＣｒ ０．Ｉ〜１．５重量％、Ｚ ｒ
０．０５〜１．０重量％の１種又は２種を含み、残部
Ｃｕ及び不可避不純物からなる合金に副成分としてＰｌ
Ａｓ、Ｓｂ、Ｆｅ、Ｃｏ、Ｎｉ１Ｓｎ、Ａｌ、Ｔｉ、Ｓ
１５Ｍｇ、Ｂｅ、Ｍｎ、Ｚｎ、Ｉｎ。Therefore, the present invention contains 0.1 to 1.5% by weight of Cr, Z r
Contains 0.05 to 1.0% by weight of one or two types, the balance being C
The surface of the alloy (of an alloy consisting of u and non-6I impurities) has a surface hardness lv of 140 or more, a center line average roughness (Ra) of 0.15μ or less, and a maximum height ( Rm
Copper alloy with good direct bondability and Cr 0. I~1.5% by weight, Z r
Pl as a subcomponent in an alloy containing 0.05 to 1.0% by weight of one or two types, and the balance consisting of Cu and unavoidable impurities.
As, Sb, Fe, Co, Ni1Sn, Al, Ti, S
15Mg, Be, Mn, Zn, In.
Ｂ、Ｈｆ、希土類元素からなる群より選択された１種又
は２種以上を総量でｏ、ｏｏｉ〜２．０正量％添加した
合金の材料表面を表面硬さがＨｖ ｌ ４０以上でかつ
表面粗さが中心線平均粗さ（Ｒａ）で０．１５μｍ以下
、最大高さ（Ｒｍａｘ）で０．８μｍ以下となるように
調整することにより、ワイヤーボンディング用リード線
を直接接若可能としたことを特徴とするダイレクトボン
ディング性の良好な銅合金および前記合金で析出粒子が
５μｍ以下であるダイレクトボンディング性の良好な銅
合金および前記合金で酸素含有量が１０ｐｐ１１以下で
あるダイレクトボンディング性の良好な銅合金である。The surface of an alloy to which one or more selected from the group consisting of B, Hf, and rare earth elements is added in a total amount of o, ooi to 2.0% by mass has a surface hardness of Hv l 40 or more and a surface By adjusting the roughness so that the center line average roughness (Ra) is 0.15 μm or less and the maximum height (Rmax) is 0.8 μm or less, it is possible to directly attach the lead wire for wire bonding. A copper alloy with good direct bonding properties characterized by: a copper alloy with good direct bonding properties in which precipitated particles are 5 μm or less; and a copper alloy with good direct bonding properties in which the alloy has an oxygen content of 10 pp11 or less It is an alloy.
次に合金成分並びに他の条件の限定理由を説明する。Ｃ
「の含有量を０．１〜１．５ ｆｆｆ量％とする理由は
、Ｃｒ含白°量が０．１重量％未満では高強度が得られ
ず、逆にＣｒａ白°瓜が１．５重量％を越えると加圧性
が低下し、半［■付は性も低下する為である。Next, the reasons for limiting the alloy components and other conditions will be explained. C
The reason for setting the content to 0.1 to 1.5 wt% is that high strength cannot be obtained if the Cr content is less than 0.1 wt%, and conversely, if the Cr content is less than 0.1 wt%, high strength cannot be obtained. If it exceeds % by weight, the pressurizing properties will decrease, and the properties marked with half [■] will also decrease.
Ｚｒ含ａ量を０．０５〜１．０重量２６とした理由は、
Ｚｒ含有量が０．０５重量％未満では面強度を示す合金
が得られず、Ｚ「含有量が１．０重量％を超えると加工
性、導電性の低下が苫しくなり、また半Ｅｕ付は性も低
下する為である。The reason why the Zr content was set to 0.05 to 1.0 by weight26 was as follows.
If the Zr content is less than 0.05% by weight, an alloy exhibiting surface strength cannot be obtained, and if the Zr content exceeds 1.0% by weight, the workability and conductivity will deteriorate severely, and the This is because sex also decreases.
副成分としで、Ｐ％ ＡＳＳＳｂ、Ｆｅ５Ｃｏ、Ｎｉｓ
Ｓｎ％ ＡＩ、 Ｔｉ、 Ｓｔ、ＭｇＳ Ｂｅ
。Sub-components: P% ASSSb, Fe5Co, Nis
Sn% AI, Ti, St, MgS Be
.
Ｍｎ％ＺｎＳ ｔｎＳＢＮ Ｈｆｑ希土類元素からなる
群より選択されたＩ Ｅｒｉ以上の総量が０．００１重
量％未満では高強度でかつ耐食性のある合金が得られず
、また２、０重量％を超えると導電性の低下及び半田付
は性の低下が著しくなる為である。Mn%ZnS tnSBN Hfq I selected from the group consisting of rare earth elements If the total amount of Eri or more is less than 0.001% by weight, an alloy with high strength and corrosion resistance cannot be obtained, and if it exceeds 2.0% by weight, it will not be conductive. This is because the deterioration in quality and soldering result in a significant deterioration in quality.
また酸素含有量を１ｏｔ）Ｉ）Ｒ１以下とした理由は、
１０ｐｐｍを越えるとめっき密着性が低下するためであ
る。析出粒子を５μｍ以下にした理由は、５μｍを越え
ると半田付は性、めっき密着性が低下するためである。Also, the reason why the oxygen content was set to 1ot)I)R1 or less is as follows.
This is because if it exceeds 10 ppm, plating adhesion will decrease. The reason why the precipitated particles are set to be 5 μm or less is that if the particle size exceeds 5 μm, solderability and plating adhesion will deteriorate.
表面粗さをｌ１ｖ１４０以上とした理由は、Ｈｖ １４
０未満ではダイレクトボンディング後のボンディングワ
イヤーの接骨強度が低く、樹脂封止工程等での剥離を起
こす場合があるためである。The reason why the surface roughness was set to l1v140 or more is that Hv14
This is because if it is less than 0, the bonding strength of the bonding wire after direct bonding is low, and peeling may occur during the resin sealing process or the like.
表面粗さを中心線平均粗さ（Ｒａ）で０．１５μｍ以下
、最大高さ（Ｒ＋＋＋ｍｘ）で０，８μ■以下とした理
由は、安定して強い接骨を得るには、表面の平均的レベ
ルが低く、かつ部分的にも有害な粗さにならない１１が
必要であるためである。The reason why we set the surface roughness to 0.15 μm or less in center line average roughness (Ra) and 0.8 μm or less in maximum height (R+++mx) is that in order to obtain stable and strong bone attachment, the average level of the surface is This is because 11 is required, which has a low roughness and does not cause harmful roughness even in parts.
すなわち、本合金系ではＲａが０，１５μｍを超えると
接骨強度が低ドし、また、Ｒａが０．１５μＩ以ドであ
ってしＲ□、が０．８μｍを超えるとその部分の密着強
度が低下し、前述したように樹脂封止工程等でのストレ
スにより剥離を起こす場合があり、イニ頼性を損ねるた
めである。In other words, in this alloy system, if Ra exceeds 0.15 μm, the bone contact strength decreases, and if Ra exceeds 0.15 μI and R exceeds 0.8 μm, the adhesion strength at that part decreases. This is because, as mentioned above, stress during the resin sealing process or the like may cause peeling, which impairs initial reliability.
［実施例］
第１表に示す本発明合金をインゴットから熱間圧延さら
には冷間圧延、焼鈍（溶体化焼鈍及び時効熱処理を含む
）のくり返しにより０．２５ＩＩＩＩ１１厚さの板とし
た。この際、表面硬さの違いは時効熱処理後圧延したり
、さらにそれを熱処理したり、過時効させたり、溶体化
させるといった方法を用い作り分けた。[Example] The alloy of the present invention shown in Table 1 was made into a plate having a thickness of 0.25III11 by repeatedly hot rolling, cold rolling, and annealing (including solution annealing and aging heat treatment) from an ingot. At this time, differences in surface hardness were created using methods such as rolling after aging heat treatment, further heat treatment, overaging, and solution treatment.
また、表面粗さは各種表面粗さの圧延ロールを用いたり
、最終板厚になった後に、各種粗さの表面研摩を行い作
製した。Moreover, the surface roughness was prepared by using rolling rolls with various surface roughnesses, or by surface polishing with various roughnesses after reaching the final plate thickness.
こうして製造した各種試料にワイヤーボンディングを行
い、見かけ上の接合状態を観察するとともに、プルテス
トによる接合強度の測定並びに破断箇所の観察を行った
。Wire bonding was performed on the various samples manufactured in this manner, and the apparent bonding state was observed, the bonding strength was measured by a pull test, and the fracture location was observed.
なお、ワイヤーボンディングとしたサーモソニック法を
用い、以ドに示すボンディング条件で行った。Note that wire bonding was performed using the thermosonic method under the bonding conditions shown below.
ボンディングワイヤの材質及びワイヤ径：Ｃｕ線２５μ
ｍφ、雰囲気： １０ Ｖｏ１％Ｈ２−Ａ ｒ。Bonding wire material and wire diameter: Cu wire 25μ
mφ, atmosphere: 10 Vo1%H2-Ar.
超音波用カニ ０．ｌＷ、基板温度：３００℃、加圧
カフ ８０ｇ 、時間： ２５ｆｆｉＳｅｅＯ結果を第
１表に示す。この結果からもわかるように表面硬さがＨ
ｖ１４０以上てかつ表面粗さもＲａで０．１５μｒａ以
下、Ｒ１１，で０．８１１１１以下という全ての条件が
そろった時に始めで、従来のメツキ材並のボンディング
性が肖られる事がわかる。Crab for ultrasound 0. lW, substrate temperature: 300°C, pressure cuff 80g, time: 25ffiSeeO results are shown in Table 1. As can be seen from this result, the surface hardness is H
It can be seen that bonding properties comparable to conventional plating materials can be achieved only when all the conditions are met: v140 or higher, surface roughness Ra is 0.15μra or less, and R11 is 0.81111 or less.
第１表
ｔＪ： ： Ｎｏ、 ９の組成中”ＭＭ”は°ミツ／ユ
メタル°である。In the composition of Table 1 tJ: : No. 9, "MM" is °Mitsu/Yumetal °.
［発明の効果］
本発明は、特定の成分系の銅合金で、表面硬さ、表面粗
さ等を特定の範囲内になるように作り込むことにより、
ダイレクトボンディング性を改善し、ＩＣ用としても信
頼性を持って使用可能ならしめたもので、しかもその製
作に当り、メツキ工程を省き、コストを大［１］に減少
させる極めて実用的価直の高いものである。[Effects of the Invention] The present invention provides a copper alloy with a specific component system, by making the surface hardness, surface roughness, etc. within a specific range.
It has improved direct bonding properties and can be used reliably for IC applications.Moreover, it is an extremely practical and inexpensive product that eliminates the plating process and greatly reduces costs [1]. It's expensive.
Claims (4)
０重量％の１種又は２種を含み、残部Ｃｕ及び不可避不
純物からなる合金の材料表面を表面硬さがＨｖ１４０以
上で、かつ表面粗さが中心線平均粗さ（Ｒａ）で０．１
５μｍ以下、最大高さ（Ｒ＿ｍ＿ａ＿ｘ）で０．８μｍ
以下となるように調整することにより、ワイヤーボンデ
ィング用リード線を直接接着可能としたことを特徴とす
るダイレクトボンディング性の良好な銅合金。(1) Cr0.1-1.5% by weight, Zr0.05-1.
The material surface of an alloy containing 0% by weight of one or two types and the balance consisting of Cu and unavoidable impurities has a surface hardness of Hv140 or more and a surface roughness of 0.1 in terms of center line average roughness (Ra).
5μm or less, maximum height (R_m_a_x) 0.8μm
A copper alloy with good direct bondability, characterized in that a lead wire for wire bonding can be directly bonded by adjusting it as follows.
０重量％の１種又は２種を含み、残部Ｃｕ及び不可避不
純物からなる合金に副成分としてＰ、Ａｓ、Ｓｂ、Ｆｅ
、Ｃｏ、Ｎｉ、Ｓｎ、Ａｌ、Ｔｉ、Ｓｉ、Ｍｇ、Ｂｅ、
Ｍｎ、Ｚｎ、Ｉｎ、Ｂ、Ｈｆ、希土類元素からなる群よ
り選択された１種又は２種以上を総量で０．００１〜２
．０重量％添加した合金の材料表面を表面硬さがＨｖ１
４０以上で、かつ、表面粗さが中心線平均粗さ（Ｒａ）
で０．１５μｍ以下、最大高さ（Ｒ＿ｍ＿ａ＿ｘ）で０
．８μｍ以下となるように調整することにより、ワイヤ
ーボンディング用リード線を直接接着可能としたことを
特徴とするダイレクトボンディング性の良好な銅合金。(2) Cr0.1-1.5% by weight, Zr0.05-1.
P, As, Sb, Fe as subcomponents in an alloy containing 0% by weight of one or two kinds, and the balance consisting of Cu and unavoidable impurities.
, Co, Ni, Sn, Al, Ti, Si, Mg, Be,
One or more selected from the group consisting of Mn, Zn, In, B, Hf, and rare earth elements in a total amount of 0.001 to 2
．． The surface hardness of the material surface of the alloy containing 0% by weight is Hv1.
40 or more, and the surface roughness is center line average roughness (Ra)
0.15μm or less, maximum height (R_m_a_x) is 0
．． A copper alloy with good direct bondability, which is characterized in that it can be directly bonded to a lead wire for wire bonding by adjusting the thickness to 8 μm or less.
、（２）記載の銅合金。(3) Claim (1) in which the precipitated particles are 5 μm or less
, (2) the copper alloy described.
（１）、（２）あるいは（３）記載の銅合金。(4) The copper alloy according to claim (1), (2) or (3), which has an oxygen content of 10 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63324783A JP2714561B2 (en) | 1988-12-24 | 1988-12-24 | Copper alloy with good direct bonding properties |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63324783A JP2714561B2 (en) | 1988-12-24 | 1988-12-24 | Copper alloy with good direct bonding properties |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02170932A true JPH02170932A (en) | 1990-07-02 |
| JP2714561B2 JP2714561B2 (en) | 1998-02-16 |
Family
ID=18169626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63324783A Expired - Fee Related JP2714561B2 (en) | 1988-12-24 | 1988-12-24 | Copper alloy with good direct bonding properties |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2714561B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5391243A (en) * | 1992-05-08 | 1995-02-21 | Mitsubishi Materials Corporation | Method for producing wire for electric railways |
| US5705125A (en) * | 1992-05-08 | 1998-01-06 | Mitsubishi Materials Corporation | Wire for electric railways |
| WO2006095678A1 (en) * | 2005-03-07 | 2006-09-14 | The Furukawa Electric Co., Ltd. | Metal material for wiring connection device |
| WO2009016706A1 (en) | 2007-07-27 | 2009-02-05 | Materials Solution Inc. | Copper alloy material |
| US10023940B2 (en) | 2003-09-19 | 2018-07-17 | Nippon Steel & Sumitomo Metal Corporation | Copper alloy and process for producing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6218744A (en) * | 1985-07-17 | 1987-01-27 | Kobe Steel Ltd | Lead frame |
| JPS6393837A (en) * | 1986-10-07 | 1988-04-25 | Furukawa Electric Co Ltd:The | Copper alloy for electronic equipment and its production |
| JPS63312935A (en) * | 1987-06-16 | 1988-12-21 | Hitachi Cable Ltd | Copper alloy material for semiconductor lead frame |
| JPS63312934A (en) * | 1987-06-16 | 1988-12-21 | Hitachi Cable Ltd | Lead frame material for semiconductor |
-
1988
- 1988-12-24 JP JP63324783A patent/JP2714561B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6218744A (en) * | 1985-07-17 | 1987-01-27 | Kobe Steel Ltd | Lead frame |
| JPS6393837A (en) * | 1986-10-07 | 1988-04-25 | Furukawa Electric Co Ltd:The | Copper alloy for electronic equipment and its production |
| JPS63312935A (en) * | 1987-06-16 | 1988-12-21 | Hitachi Cable Ltd | Copper alloy material for semiconductor lead frame |
| JPS63312934A (en) * | 1987-06-16 | 1988-12-21 | Hitachi Cable Ltd | Lead frame material for semiconductor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5391243A (en) * | 1992-05-08 | 1995-02-21 | Mitsubishi Materials Corporation | Method for producing wire for electric railways |
| US5705125A (en) * | 1992-05-08 | 1998-01-06 | Mitsubishi Materials Corporation | Wire for electric railways |
| US10023940B2 (en) | 2003-09-19 | 2018-07-17 | Nippon Steel & Sumitomo Metal Corporation | Copper alloy and process for producing the same |
| US10106870B2 (en) | 2003-09-19 | 2018-10-23 | Nippon Steel & Sumitomo Metal Corporation | Copper alloy and process for producing the same |
| WO2006095678A1 (en) * | 2005-03-07 | 2006-09-14 | The Furukawa Electric Co., Ltd. | Metal material for wiring connection device |
| WO2009016706A1 (en) | 2007-07-27 | 2009-02-05 | Materials Solution Inc. | Copper alloy material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2714561B2 (en) | 1998-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2714560B2 (en) | Copper alloy with good direct bonding properties | |
| JPS6254048A (en) | Copper alloy for lead frame | |
| JPS63143230A (en) | Precipitation strengthening high tensile copper alloy having high electrical conductivity | |
| JPH02170932A (en) | Copper alloy having superior direct bonding property | |
| JP3318309B2 (en) | Lead frame and copper alloy for lead frame | |
| JP3673368B2 (en) | Gold-silver alloy fine wire for semiconductor devices | |
| JPH02170934A (en) | Copper alloy having superior direct bonding property | |
| JPH02173231A (en) | Copper alloy having good direct bonding properties | |
| JP3612180B2 (en) | Gold-silver alloy fine wire for semiconductor devices | |
| JPH02170935A (en) | Copper alloy having superior direct bonding property | |
| JPH02170936A (en) | Copper alloy having superior direct bonding property | |
| JP2797846B2 (en) | Cu alloy lead frame material for resin-encapsulated semiconductor devices | |
| JPH02173228A (en) | Copper alloy having good direct bonding properties | |
| JPS5947751A (en) | Copper alloy for lead wire material of semiconductor device | |
| JPH02173230A (en) | Copper alloy having good direct bonding properties | |
| JPH02170938A (en) | Copper alloy having superior direct bonding property | |
| JPS6140290B2 (en) | ||
| JPS59177339A (en) | Fine pd alloy wire for wire-bonding of semiconductor device | |
| JPH02170933A (en) | Copper alloy having superior direct bonding property | |
| JPS62130249A (en) | Copper fine wire for bonding | |
| JPS6320906B2 (en) | ||
| JPH02173227A (en) | Copper alloy having good direct bonding properties | |
| JPH04229631A (en) | Bonding wire | |
| EP0399721A1 (en) | Electrical conductors and methods of making them | |
| JPH0412621B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |