JPH02170936A - Copper alloy having superior direct bonding property - Google Patents

Copper alloy having superior direct bonding property

Info

Publication number
JPH02170936A
JPH02170936A JP32478488A JP32478488A JPH02170936A JP H02170936 A JPH02170936 A JP H02170936A JP 32478488 A JP32478488 A JP 32478488A JP 32478488 A JP32478488 A JP 32478488A JP H02170936 A JPH02170936 A JP H02170936A
Authority
JP
Japan
Prior art keywords
copper alloy
less
weight
alloy
deteriorated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32478488A
Other languages
Japanese (ja)
Inventor
Masahiro Tsuji
正博 辻
Hiroaki Watanabe
宏昭 渡辺
Takatoki Fukuda
福田 孝祝
Kenji Mori
健次 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tatsuta Electric Wire and Cable Co Ltd
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Tatsuta Electric Wire and Cable Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd, Tatsuta Electric Wire and Cable Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP32478488A priority Critical patent/JPH02170936A/en
Publication of JPH02170936A publication Critical patent/JPH02170936A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent

Abstract

PURPOSE:To provide the copper alloy for lead frame applicable to all semiconductor products by specifying the surface hardness and the center line average height and maximum height of surface roughness of a copper alloy containing specific amounts of Sn and P, respectively. CONSTITUTION:This copper alloy is prepared by regulating the surface of an alloy material having a composition consisting of, by weight, 0.5-9.0% Sn, 0.01-0.3% P, and the balance Cu so that surface hardness is >=Hv150 and surface roughness is <=0.15mu by center line average height Ra and <=0.8mu by maximum height Rmax. In the above alloy, high strength and high electric conductivity cannot be obtained when Sn content is below the lower limit, and, when it exceeds the upper limit, workability and solderability are deteriorated. As to P content, high strength and high electric conductivity cannot be obtained when it is below the lower limit, and, when it exceeds the upper limit, workability and electric conductivity are remarkably deteriorated and solderability is also deteriorated. Further, when the values of the above Hv, Ra, and Rmax are <150, >0.15mu and >0.8mu, respectively, the adhesive strength of bonding wire is deteriorated and, as a result, there are cases where peeling is brought about in a resin sealing stage, etc.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は半導体機器のリード祠用銅合金に、ワイヤーボ
ンディング用リード線を直接接青(ダイレクトボンディ
ング)するiGをi+J能にするダイレクトボンディン
グ性の良好な銅合金に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention provides direct bonding properties that enable iG to i+J capability for directly bonding lead wires for wire bonding to copper alloys for lead holes in semiconductor devices. Concerning good copper alloys.

[従来の技術] 従来、半導体機器は、まず銅または銅合金のリード材用
素材を打抜き又はエツチングにより所定の形状に成形し
、次に、゛V導体素子の接合部分および半導体索rとリ
ード材とを金線等でワイヤーボンディングするために、
リード材の所定部分へメツキを行い、ついでメツキされ
た部分へ半導体素子をダイボンドしさらに半導体素子と
リード材をワイヤーボンディング用リード線でワイヤー
ボンディングを行い、最後にこれを封止して製品として
いた。
[Prior Art] Conventionally, semiconductor devices have been manufactured by first forming copper or copper alloy lead material into a predetermined shape by punching or etching, and then forming the bonding portion of the V-conductor element, the semiconductor cable, and the lead material. In order to wire bond with gold wire etc.
A predetermined portion of the lead material is plated, then a semiconductor element is die-bonded to the plated part, the semiconductor element and the lead material are wire-bonded using a wire bonding lead wire, and finally this is sealed to create a product. .

これから分かるように、リード材と半導体素子および半
導体素子とリード材との接合のためには、必ずメツキを
必要としていた。
As can be seen, plating is always required to bond the lead material and the semiconductor element and the semiconductor element and the lead material.

ところがメツキ操作自体は、微小な個所へのメツキであ
るために、非常に高い精度を必要とし、メツキの良否が
ダイボンドおよびワイヤーボンドに直接影響を与えて、
場合により不良品が発生した。
However, the plating operation itself requires extremely high precision because it involves plating minute spots, and the quality of the plating directly affects the die bond and wire bond.
In some cases, defective products occurred.

また半導体素子およびリード材との材質の関係および耐
久性、電導性、付希性などからみて、金または銀のメツ
キが行われているが、これが半導体機器の非常なコスト
高を招いた。
Furthermore, in view of the relationship between the materials of the semiconductor element and the lead material, as well as durability, conductivity, and resistance to corrosion, gold or silver plating is used, but this has led to extremely high costs for semiconductor devices.

このためメッキ厚やメツキ面積を減少させたり、また前
記金や銀にかえて、卑金属を用いることなどを検討して
いるが、あまり画期的な効果は上っていない。
For this reason, attempts have been made to reduce the plating thickness and area, and to use base metals instead of gold and silver, but these efforts have not yielded any groundbreaking results.

さらに半導体素子のダイボンドのみをペーストで代替さ
せて接合する技術が開発されて、半導体素子のダイボン
ドの際のメツキが一応不要となったが、あいかわらずリ
ード材と半導体素子とを金線で接合するワイヤーボンデ
ィングの為にはメツキが必要であり、工程数はいっこう
に減少せず、根本的な解決策にはなっていない。
Furthermore, a technology has been developed to replace only the die bonding of semiconductor elements with paste and bonding, and plating is no longer necessary when die bonding semiconductor elements, but the wire used to bond the lead material and semiconductor element with gold wire still remains. Plating is required for bonding, and the number of steps has not been reduced at all, so this is not a fundamental solution.

ところで、ダイレクトボンディング性を改善させるべく
、過去にリードフレーム材料の観点から若干の検討は行
われている。例えば特公昭82−48071では材料の
表面粗さが最大高さ(Rmax)で0.5μ四以下とす
る事、あるいはさらに析出物、介在物等の単一面積が3
X10−612以下にする事でダイレクトボンディング
性が改善される事がわかっている。
Incidentally, in order to improve direct bonding properties, some studies have been conducted in the past from the viewpoint of lead frame materials. For example, in Japanese Patent Publication No. 82-48071, the maximum height (Rmax) of the surface roughness of the material is 0.5 μ4 or less, or the single area of precipitates, inclusions, etc.
It is known that direct bonding properties can be improved by setting the thickness to 10-612 or less.

[発明が解決しようとする課′、XJ]実際の製品に上
記公知技術を適用した場合、要求される信頼性が高いI
C,LSI5VLSI製品としては、まだまだ満足でき
るレベルにはなっておらず、一部トランジスター用に使
用されている現状である。
[Problem to be solved by the invention, XJ] When the above-mentioned known technology is applied to an actual product, the required high reliability I
As a C,LSI5VLSI product, it has not yet reached a satisfactory level and is currently being used for some transistors.

従って、ダイレクトボンディング性という観点から一層
の敗訴をはかり、トランジスターからVLSIまでの全
ての゛1毛導体製品に適用できるリードフレーム用銅合
金が望まれている。
Therefore, there is a need for a copper alloy for lead frames that can be applied to all single-layer conductor products, from transistors to VLSIs, with further improvements in terms of direct bonding properties.

[3題を解決するための手段コ 本発明者らは、ダイレクトボンディング性に及ぼす種々
の材料因子について検討を行ったところ、材料の表面粗
さ規定はR□、では不十分であり、中心線平均粗さ(R
a)といった全体的な表面粗さのレベルの規定が必要で
あることを見出した。従来R□、0.5μm以下といわ
れていたが、一部R、、、、0,5μ■を越えてもRa
がある値以下であれば優れたダイレクトボンディング性
を示すり(等が判明した。
[Means for solving the three problems] The present inventors investigated various material factors that affect direct bonding properties, and found that R Average roughness (R
It has been found that it is necessary to specify the level of overall surface roughness as in a). Conventionally, R□ was said to be less than 0.5μm, but even if it exceeds some R□, 0.5μ■
It has been found that if the value is below a certain value, excellent direct bonding properties are exhibited.

さらに1、材料の硬さもある値以上にしなければならな
い事を見出した。
Furthermore, we discovered that the hardness of the material must exceed a certain value.

そこで、本発明はS n  0.5〜9.0重量 96
、Po、01〜0.3重量26を含み、残部Cu及び不
可避不純物からなる合金の材料表面を表面硬さが11v
 150以上で、かつ、表面粗さが中心線平均粗さ(R
a)で0.15μm以ド、最大高さ(R1,。)で0.
8μ−以下となるように調整することにより、ワイヤー
ボンディング用リード線を直接接6n工能としたことを
特徴とするダイレクトボンディング性の良好な銅合金お
よびSn0.5〜9.0重量96、P0.旧〜0,3重
息%を含み、残部Cu及び不可避不純物からなる合金に
副成分としてAsS Sb、Fe、CoS Cr5Ni
Therefore, the present invention provides S n 0.5 to 9.0 weight 96
, Po, 01 to 0.3 weight 26, and the balance is Cu and inevitable impurities.The surface hardness of the alloy is 11V.
150 or more, and the surface roughness is center line average roughness (R
a) is 0.15 μm or more, and the maximum height (R1,.) is 0.
Copper alloy with good direct bondability and Sn0.5 to 9.0 weight 96, P0 .. AsS Sb, Fe, CoS Cr5Ni as sub-components in an alloy containing 0.3 weight% of hydrogen and the remainder Cu and unavoidable impurities.
.

A I、Ti、Z r、S i、Mg5Be、Mn。AI, Ti, Zr, Si, Mg5Be, Mn.

Zn、In5BSHf、希土類元素からなる群より選択
されたIF!!又は2種以上を総ユで0.001〜2.
0重量%添加した合金の材料表面を表面硬さ力月1v 
150以上でかつ表面粗さが中心線平均粗さ(Ra)で
0.15μm以下、最大高さ(Rmax)で0.8μm
以下となるように:J!J整することにより、ワイヤー
ボンディング用リード線を直接接着可能としたことを特
徴とするダイレクトボンディング性の良好な銅合金およ
び前記合・金で析出粒子が5μ−以下であるダイレクト
ボンディング性の良好な銅合金および前記合金で酸素含
有量が1opprA以ドであるダイレクトボンディング
性の良好な銅合金である。
IF selected from the group consisting of Zn, In5BSHf, and rare earth elements! ! Or two or more types in a total amount of 0.001 to 2.
The surface hardness of the alloy material with 0 wt% addition is 1v.
150 or more, and the surface roughness is 0.15 μm or less in center line average roughness (Ra) and 0.8 μm in maximum height (Rmax).
So that: J! Copper alloy with good direct bonding properties, characterized in that lead wires for wire bonding can be directly bonded by J adjustment, and copper alloys with good direct bonding properties, in which the precipitated particles of the alloy/metal are 5μ or less. The present invention is a copper alloy and a copper alloy having good direct bonding properties in which the oxygen content is 1 opprA or less.

次に合金成分並びに他の条件の限定理由を説明する。S
nの含有量を0.5〜9.0重量%とする理由は、Sn
含有量が0.5重量%未満ではPを0.01重量%以上
添加しても高強度でかつ高専ra性を示す合金が得られ
ず、逆にSn含有量が9.0重量96を越えると加工性
が低下し、半田付は性も低下する為である。
Next, the reasons for limiting the alloy components and other conditions will be explained. S
The reason for setting the content of n to 0.5 to 9.0% by weight is that Sn
If the Sn content is less than 0.5% by weight, even if 0.01% by weight or more of P is added, an alloy with high strength and high RA property cannot be obtained, and conversely, the Sn content exceeds 9.0% by weight. This is because the processability decreases and the soldering performance also decreases.

P自白”量を0.01〜0.3mW%とした理由は、P
金白°量が0.01重量%未満ではSnを0.5重量9
6以上添加しても高強度でかつ高導電性を示す合金が得
られず、P含H量が0.3重量%を超えると加工性、導
電性の低下が著しくなり、また半田付は性も低下する為
である。
The reason why the amount of “P confession” was set to 0.01 to 0.3 mW% is that
If the amount of gold platinum is less than 0.01% by weight, Sn is added by 0.5% by weight9.
Even if 6 or more is added, an alloy with high strength and high conductivity cannot be obtained, and when the P-H content exceeds 0.3% by weight, the workability and conductivity deteriorate significantly, and the soldering becomes difficult. This is because it also decreases.

副成分として、A s s S b SF e % C
o、C「、Ni1Al、Ti5ZrSSi、、Mg。
As a subcomponent, A s s S b SF e % C
o, C'', Ni1Al, Ti5ZrSSi,, Mg.

Be、Mn、ZnS In、B、Hf、希土類元素から
なる群より選択された1種以上の総量が0.001重瓜
重二満では高強度でかつ耐食性のある合金が得られず、
また2、0重量%を超えると導電性の低下及び半nl付
は性の低下が著しくなる為である。
If the total amount of one or more selected from the group consisting of Be, Mn, ZnS In, B, Hf, and rare earth elements is less than 0.001 mm, an alloy with high strength and corrosion resistance cannot be obtained,
Moreover, if it exceeds 2.0% by weight, the conductivity and half-nl adhesion properties will be significantly lowered.

また酸素含有量をlOppm以下とした理由は、10p
pmを越えるとめっき密行性が低下するためである。析
出粒子を5μI以ドにした理由は、5μsを越えると半
田付は性、めっき密d性が低下するためである。
Also, the reason why the oxygen content was set to 1Oppm or less was 10p
This is because if it exceeds pm, the plating density will decrease. The reason why the amount of precipitated particles is set to 5 μI or less is that if the time exceeds 5 μs, the soldering properties and plating density deteriorate.

表面粗さを1Iv150以上とした理由は、Hv 15
0未満ではダイレクトボンディング後のボンディングワ
イヤーの接6強度が低く、樹脂封止工程等でのノリ離を
起こす場合があるためである。
The reason why the surface roughness is set to 1Iv150 or more is that Hv 15
This is because if it is less than 0, the bonding strength of the bonding wire after direct bonding will be low, and adhesive separation may occur during the resin sealing process or the like.

表面粗さを中心線平均粗さ(Ra)で0,15μ量以下
、最大高さ(RM6K)で0.8μm以下とした理由は
、安定して強い接着を得るには、表面の・1シ均的レベ
ルが低く、かつ部分的にも有害な粗さにならない事が必
要であるためである。
The reason why we set the surface roughness to 0.15 μm or less in center line average roughness (Ra) and 0.8 μm or less in maximum height (RM6K) is that in order to obtain stable and strong adhesion, This is because it is necessary that the uniformity level is low and that there is no harmful roughness even in parts.

すなわち、本合金系ではRaが0615μ腹を超えると
接着強度が低下し、また、Raが0,15μm以下であ
ってもRII a Mが0,8μ謡を超えるとその部分
の密る強度が低下し、前述したように樹脂月11工程等
でのストレスにより剥離を起こす場合があり、信頼性を
損ねるためである。
In other words, in this alloy system, when Ra exceeds 0.615 μm, the adhesive strength decreases, and even if Ra is 0.15 μm or less, when RII a M exceeds 0.8 μm, the adhesive strength at that part decreases. However, as described above, stress during the resin step 11 process may cause peeling, which impairs reliability.

[実施例] 第1表に示す本発明合金をインゴットから熱間圧延さら
には冷間圧延、焼鈍(溶体化焼鈍及び時効熱処理を含む
)のくり返しにより0.25+as厚さの板とした。こ
の際、表面硬さの違いは時効熱処理後圧延したり、さら
にそれを熱処理したり、過時効させたり、溶体化させる
といった方法を用い作り分けた。
[Example] The alloy of the present invention shown in Table 1 was made into a plate having a thickness of 0.25+as by repeatedly hot rolling, cold rolling, and annealing (including solution annealing and aging heat treatment) from an ingot. At this time, differences in surface hardness were created using methods such as rolling after aging heat treatment, further heat treatment, overaging, and solution treatment.

また、表面粗さは各種表面粗さの圧延ロールを用いたり
、最終板厚になった後に、各種粗さの表面研摩を行い作
製した。
Moreover, the surface roughness was prepared by using rolling rolls with various surface roughnesses, or by surface polishing with various roughnesses after reaching the final plate thickness.

こうして製造した各種試料にワイヤーボンディングを行
い、見かけ上の接合状態を観察するとともに、プルテス
トによる接合強度の111定並びに破断箇所の観察を行
った。
Wire bonding was performed on various samples manufactured in this manner, and the apparent bonding state was observed, as well as the 111 constant of the bonding strength and the fracture location were observed by a pull test.

なお、ワイヤーボンディングとしたサーモソニック法を
用い、以下に示すボンディング条件で行った。
Note that wire bonding was performed using the thermosonic method under the bonding conditions shown below.

ボンディングワイヤの材質及びワイヤ径:Cu線25μ
iφ、雰囲気: l(l Vo1%H2−A r。
Bonding wire material and wire diameter: Cu wire 25μ
iφ, atmosphere: l(l Vo1%H2-A r.

超音波出カニ  0.lW、基板温度=300℃、加圧
カニ 80g 、時間: 25Ilscc。
Ultrasonic crab 0. lW, substrate temperature = 300°C, pressure crab 80g, time: 25Ilscc.

結果を第1表に示す。この結果からもわかるように表面
硬さがHV150以上でかつ表面粗さもRaで0.15
μm以下、R11、で0.8μm以下という全ての条件
がそろった時に始めて、従来のメツキ打曲のボンディン
グ性が得られる事がわかる。
The results are shown in Table 1. As can be seen from this result, the surface hardness is HV150 or higher and the surface roughness is Ra 0.15.
It can be seen that the bonding properties of the conventional plating/curving method can only be obtained when all the conditions are met: micrometer or less, R11, and 0.8 micrometer or less.

第1表 No、8の組成中”Mhioは°ミッンユメタル゛であ
る。
In the composition No. 8 of Table 1, "Mhio" is a mineral metal.

[発明の効果] 本発明は、特定の成分系の銅合金で、表面硬さ、表面粗
さ等を特定の範囲内になるように作り込むことにより、
ダイレクトボンディング性を敗訴し、IC用としても信
頼性を持って使用可能ならしめたもので、しかもその製
作に当り、メツキ工程を省き、コストを大iJに減少さ
せる極めて実用的価値の高いものである。
[Effects of the Invention] The present invention provides a copper alloy with a specific component system, by making the surface hardness, surface roughness, etc. within a specific range.
It is a product with extremely high practical value that eliminates the plating process and reduces the cost to a large iJ in its production. be.

Claims (4)

【特許請求の範囲】[Claims] (1)Sn0.5〜9.0重量%、P0.01〜0.3
重量%を含み、残部Cu及び不可避不純物からなる合金
の材料表面を表面硬さがHv150以上で、かつ表面粗
さが中心線平均粗さ(Ra)で 0.15μm以下、最大高さ(R_m_a_x)で0.
8μm以下となるように調整することにより、ワイヤー
ボンディング用リード線を直接接着可能としたことを特
徴とするダイレクトボンディング性の良好な銅合金。
(1) Sn0.5-9.0% by weight, P0.01-0.3
% by weight, the balance being Cu and unavoidable impurities, the material surface has a surface hardness of Hv150 or more, a center line average roughness (Ra) of 0.15 μm or less, and a maximum height (R_m_a_x). So 0.
A copper alloy with good direct bondability, which is characterized in that it can be directly bonded to a lead wire for wire bonding by adjusting the thickness to 8 μm or less.
(2)Sn0.5〜9.0m量%、P0.01〜0.3
重量%を含み、残部Cu及び不可避不純物からなる合金
に、副成分としてAs、Sb、Fe、Co、Cr、Ni
、Al、Ti、Zr、Si、Mg、Be、Mn、Zn、
In、B、Hf、希土類元素からなる群より選択された
1種又は2種以上を総量で0.001〜2.0重量%添
加した合金の材料表面を表面硬さがHv150以上で、
かつ、表面粗さが中心線平均粗さ(Ra)で0.15μ
m以下、最大高さ(R_m_a_x)で0.8μm以下
となるように、調整することにより、ワイヤーボンディ
ング用リード線を直接接着可能としたことを特徴とする
ダイレクトボンディング性の良好な銅合金。
(2) Sn0.5-9.0m amount%, P0.01-0.3
% by weight, with the balance consisting of Cu and unavoidable impurities, As, Sb, Fe, Co, Cr, Ni as subcomponents.
, Al, Ti, Zr, Si, Mg, Be, Mn, Zn,
The material surface of the alloy to which one or more selected from the group consisting of In, B, Hf, and rare earth elements is added in a total amount of 0.001 to 2.0% by weight has a surface hardness of Hv150 or more,
And the surface roughness is 0.15μ in center line average roughness (Ra)
A copper alloy with good direct bondability, characterized in that a lead wire for wire bonding can be directly bonded by adjusting the maximum height (R_m_a_x) to be 0.8 μm or less.
(3)析出粒子が5μm以下である特許請求範囲(1)
あるいは(2)記載の銅合金。
(3) Claim (1) in which the precipitated particles are 5 μm or less
Or the copper alloy described in (2).
(4)酸素含有量が10ppm以下である特許請求範囲
(1)、(2)あるいは(3)記載の銅合金。
(4) The copper alloy according to claim (1), (2) or (3), which has an oxygen content of 10 ppm or less.
JP32478488A 1988-12-24 1988-12-24 Copper alloy having superior direct bonding property Pending JPH02170936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32478488A JPH02170936A (en) 1988-12-24 1988-12-24 Copper alloy having superior direct bonding property

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32478488A JPH02170936A (en) 1988-12-24 1988-12-24 Copper alloy having superior direct bonding property

Publications (1)

Publication Number Publication Date
JPH02170936A true JPH02170936A (en) 1990-07-02

Family

ID=18169637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32478488A Pending JPH02170936A (en) 1988-12-24 1988-12-24 Copper alloy having superior direct bonding property

Country Status (1)

Country Link
JP (1) JPH02170936A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882442A (en) * 1995-10-20 1999-03-16 Olin Corporation Iron modified phosphor-bronze
US6063506A (en) * 1995-06-27 2000-05-16 International Business Machines Corporation Copper alloys for chip and package interconnections
CN109266898A (en) * 2018-11-21 2019-01-25 中航力源液压股份有限公司 A kind of aerospace hydraulic pump rubs secondary cast tin bronze and its method of smelting

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063506A (en) * 1995-06-27 2000-05-16 International Business Machines Corporation Copper alloys for chip and package interconnections
US5882442A (en) * 1995-10-20 1999-03-16 Olin Corporation Iron modified phosphor-bronze
CN109266898A (en) * 2018-11-21 2019-01-25 中航力源液压股份有限公司 A kind of aerospace hydraulic pump rubs secondary cast tin bronze and its method of smelting

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