JP6926245B2 - Bonding wire - Google Patents
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- 229910000838 Al alloy Inorganic materials 0.000 description 4
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- 238000009749 continuous casting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000010265 fast atom bombardment Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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Description
本発明は、ボンディングワイヤに関する。 The present invention relates to bonding wires.
半導体素子上の電極と基板の電極とを接続する方法として、図１に示すように、放電加熱等によりボンディングワイヤＷの先端に形成したＦＡＢ（Ｆｒｅｅ Ａｉｒ Ｂａｌｌ）を一方の電極１０に押し当てて１ｓｔ接合を行った後、ボンディングワイヤの外周面を他方の電極１０’に押し当てて２ｎｄ接合を行うボールボンディング法によって電極１０，１０’を接続する方法や、図２に示すように、ＦＡＢを一方の電極２０に押し当てて接合した後、ボンディングワイヤＷを切断して一方の電極２０にバンプ２２を形成し、このバンプ２２及びハンダ２４を介して他方の電極２０’を接続する方法が知られている。
As a method of connecting the electrode on the semiconductor element and the electrode of the substrate, as shown in FIG. 1, FAB (Free Air Ball) formed at the tip of the bonding wire W by discharge heating or the like is pressed against one of the
このようなボールボンディング法やバンプの形成に用いられるボンディングワイヤでは、化学的な安定性や大気中での取り扱いやすさから、純度４Ｎ（９９．９９質量％）のＡｕ（金）からなるボンディングワイヤが用いられている。 Bonding wires used in such ball bonding methods and bump formation are made of Au (gold) with a purity of 4N (99.99% by mass) because of their chemical stability and ease of handling in the atmosphere. Is used.
しかしながら、純度４ＮのＡｕからなるボンディングワイヤをＡｌ（アルミニウム）やＡｌ合金の電極１０，２０に接合すると、電極１０上に形成された接合部（以下、この接合部を「ＦＡＢ接合部」ということもある）１２と電極１０との界面近傍や、電極２０上に形成されたバンプ２２と電極２０との界面付近にＡｕ−Ａｌ金属間化合物が生成される。生成されたＡｕ−Ａｌ金属間化合物により、界面にクラックやカーケンダルボイドが生じやすい。
However, when a bonding wire made of Au having a purity of 4N is bonded to the
下記特許文献１には、ＡｕにＣｕ（銅）及びＰｄ（パラジウム）を複合添加した合金からなるボンディングワイヤが提案されている。 Patent Document 1 below proposes a bonding wire made of an alloy in which Cu (copper) and Pd (palladium) are compounded added to Au.
しかしながら、Ａｕを主成分とするボンディングワイヤにＰｄを添加すると、ＦＡＢ接合部と電極との界面部分のクラックの発生をある程度防止できるが、カーケンダルボイドの発生の防止は難しく、接合信頼性を満足することができない。 However, when Pd is added to a bonding wire containing Au as a main component, it is possible to prevent the occurrence of cracks at the interface between the FAB bonding portion and the electrode to some extent, but it is difficult to prevent the generation of Kirkendal voids, and the bonding reliability is satisfied. Can not do it.
本発明は、上記事情に鑑みてなされたものであり、Ａｌ合金からなる電極に接合する場合でもボンディングワイヤと電極との接合部分のクラックやカーケンダルボイドの発生を抑制することができ、長期間にわたり接合信頼性が高いボンディングワイヤを提供することを目的とする。 The present invention has been made in view of the above circumstances, and even when bonding to an electrode made of an Al alloy, it is possible to suppress the occurrence of cracks and Kirkendal voids at the bonding portion between the bonding wire and the electrode, and for a long period of time. It is an object of the present invention to provide a bonding wire having high bonding reliability.
上記課題を解決するため、本発明のボンディングワイヤは、Ｃｕの含有量が０．１質量％以上５．０質量％以下、Ｃａの含有量が１質量ｐｐｍ以上１００質量ｐｐｍ以下、Ｎｄ、Ｓｍ、及びＧｄからなる群から選択された１種又は２種以上の元素の含有量の合計が１質量ｐｐｍ以上１００質量ｐｐｍ以下、Ｃａの含有量とＮｄ、Ｓｍ、及びＧｄからなる群から選択された１種又は２種以上の元素の含有量の合計が５質量ｐｐｍ以上１５０質量ｐｐｍ以下であり、残部がＡｕからなるボンディングワイヤとする。 In order to solve the above problems, the bonding wire of the present invention has a Cu content of 0.1% by mass or more and 5.0% by mass or less, a Ca content of 1% by mass or more and 100% by mass or less, Nd, Sm. And Gd, the total content of one or more elements selected from the group consisting of 1 mass ppm or more and 100 mass ppm or less, the Ca content and the group consisting of Nd, Sm, and Gd. A bonding wire in which the total content of one or more elements is 5 mass ppm or more and 150 mass ppm or less, and the balance is Au.
上記本発明のボンディングワイヤにおいて、Ｃｕの含有量が３質量％未満であることが好ましく、Ｃｕの含有量が１質量％未満であることがより好ましい。また、Ｃｕの含有量が０．３質量％以上であることが好ましい。また、Ｃａの含有量とＮｄ、Ｓｍ、及びＧｄからなる群から選択された１種又は２種以上の元素の含有量の合計が２０質量ｐｐｍ以上１００質量ｐｐｍ以下であることが好ましい。 In the bonding wire of the present invention, the Cu content is preferably less than 3% by mass, and more preferably the Cu content is less than 1% by mass. Further, the Cu content is preferably 0.3% by mass or more. Further, it is preferable that the total content of Ca and the content of one or more elements selected from the group consisting of Nd, Sm, and Gd is 20 mass ppm or more and 100 mass ppm or less.
本発明によれば、Ａｌ合金からなる電極に接合する場合でもボンディングワイヤと電極との接合部分にクラックやカーケンダルボイドが発生するのを抑制することができ、長期間にわたり接合信頼性の高いボンディングワイヤが得られる。 According to the present invention, even when bonding to an electrode made of an Al alloy, it is possible to suppress the occurrence of cracks and Kirkendal voids at the bonding portion between the bonding wire and the electrode, and bonding with high bonding reliability for a long period of time. The wire is obtained.
以下、本発明の一実施形態に係るボンディングワイヤについて図１を参照して説明する。 Hereinafter, the bonding wire according to the embodiment of the present invention will be described with reference to FIG.
本実施形態のボンディングワイヤＷは、半導体パッケージ（例えば、パワーＩＣ、ＬＳＩ、トランジスタ、ＢＧＡＰ（Ball Grid Array Package）、ＱＦＮ（Quad Flat Nonlead package）、ＬＥＤ（発光ダイオード）等）における半導体素子上の電極（例えば、Ａｌ合金電極、ニッケル・パラジウム・金被覆電極、Ａｕ被覆電極等）１０と、回路配線基板（リードフレーム、セラミック基板、プリント基板等）の導体配線（電極）１０'とをボールボンディング法によって接続するためのボンディングワイヤである。 The bonding wire W of the present embodiment is an electrode on a semiconductor element in a semiconductor package (for example, power IC, LSI, transistor, BGAP (Ball Grid Array Package), QFN (Quad Flat Nonlead package), LED (light emitting diode), etc.). (For example, Al alloy electrode, nickel / palladium / gold coated electrode, Au coated electrode, etc.) 10 and conductor wiring (electrode) 10'of a circuit wiring board (lead frame, ceramic substrate, printed circuit board, etc.) are bonded by a ball bonding method. It is a bonding wire for connecting by.
なお、本実施形態のボンディングワイヤＷは、ボールボンディング法以外にもバンプの形成に使用することもでき、また、半導体パッケージ以外の種々の態様のボンディングワイヤとして使用することができる。 The bonding wire W of the present embodiment can be used for forming bumps other than the ball bonding method, and can be used as a bonding wire of various aspects other than the semiconductor package.
このボンディングワイヤＷは、Ｃｕの含有量が０．１〜５．０質量％、Ｃａの含有量が１〜１００質量ｐｐｍ、Ｎｄ、Ｓｍ及びＧｄから選択された１種又は２種の元素の含有量の合計が１〜１００質量ｐｐｍ、Ｃａの含有量とＮｄ、Ｓｍ、及びＧｄからなる群から選択された１種又は２種以上の元素の含有量の合計が５質量ｐｐｍ以上１５０質量ｐｐｍ以下であり、残部がＡｕからなるものである。ボンディングワイヤＷの線径は、用途に応じて種々の大きさとしてよいが、例えば、５μｍ以上１５０μｍ以下とすることができる。 This bonding wire W has a Cu content of 0.1 to 5.0% by mass, a Ca content of 1 to 100% by mass, and contains one or two elements selected from Nd, Sm and Gd. The total amount is 1 to 100 mass ppm, the total content of Ca and the content of one or more elements selected from the group consisting of Nd, Sm, and Gd is 5 mass ppm or more and 150 mass ppm or less. And the rest is made up of Au. The wire diameter of the bonding wire W may be various in size depending on the application, but can be, for example, 5 μm or more and 150 μm or less.
具体的には、ボンディングワイヤＷを構成するＡｕは、精製上不可避的に存在する不純物を含有してもよい。Ａｕでは、不純物として例えば、Ａｇ、Ｐｄ、Ｃｕ、Ｆｅ（鉄）等を含有してもよい。 Specifically, Au constituting the bonding wire W may contain impurities that are inevitably present in purification. Au may contain, for example, Ag, Pd, Cu, Fe (iron) and the like as impurities.
Ｃｕの含有量を０．１質量％以上とすることにより、図１に示すような電極１０に溶融したＦＡＢを圧着することで電極１０上に形成されたＦＡＢ接合部１２と電極１０の界面近傍にクラックやカーケンダルボイドが発生するのを抑えることができ、長期間にわたって接合信頼性の高いボンディングワイヤが得られる。
By setting the Cu content to 0.1% by mass or more, the vicinity of the interface between the
Ｃｕの含有量を５．０質量％以下とすることにより、ボンディングワイヤの先端に形成されるＦＡＢが硬くなりすぎず、電極にＦＡＢを押し付けて接合する時に生じる電極の損傷を抑えることができる。 By setting the Cu content to 5.0% by mass or less, the FAB formed at the tip of the bonding wire does not become too hard, and damage to the electrode that occurs when the FAB is pressed against the electrode for bonding can be suppressed.
Ｃｕの含有量の上限値は、３．０質量％以下とすることが好ましく、１．０質量％未満とすることがより好ましい。また、Ｃｕの含有量の下限値は、０．３質量％以上であることが好ましい。 The upper limit of the Cu content is preferably 3.0% by mass or less, and more preferably less than 1.0% by mass. The lower limit of the Cu content is preferably 0.3% by mass or more.
Ｃｕの含有量を３．０質量％以下とすることにより、上記した電極の損傷を更に抑えることができる。またＣｕの含有量を３．０質量％以下とすることにより、ボンディングワイヤの先端に形成されるＦＡＢの加工硬化が抑えられるので、電極にＦＡＢを押し付けて接合する時に生じる電極のめくれである「アルミスプラッシュ」を抑えることができる。Ｃｕの含有量を１．０質量％未満とすることにより、電極の損傷及びアルミスプラッシュをより一層抑えることができる。Ｃｕの含有量が０．３質量％以上であると接合信頼性や１ｓｔネック強度や２ｎｄ接合強度をより一層良好にすることができる。 By setting the Cu content to 3.0% by mass or less, the above-mentioned damage to the electrodes can be further suppressed. Further, by setting the Cu content to 3.0% by mass or less, work hardening of the FAB formed at the tip of the bonding wire is suppressed, so that the electrode is turned over when the FAB is pressed against the electrode to be joined. "Almis Splash" can be suppressed. By setting the Cu content to less than 1.0% by mass, damage to the electrodes and aluminum splash can be further suppressed. When the Cu content is 0.3% by mass or more, the joining reliability, the 1st neck strength, and the 2nd joining strength can be further improved.
１ｓｔネック強度とは、ＦＡＢ接合部１２とボンディングワイヤＷとの境界部分（以下、この境界部分を「１ｓｔネック部」ということもある）１４における強度のことである。２ｎｄ接合強度とは、ボンディングワイヤＷの外周面を他方の電極１０’に押し当てて形成された接合部（以下、この接合部を「２ｎｄ接合部」ということもある）１６における強度のことである。
The 1st neck strength is the strength at the
Ｃａを含有することにより、図１に示すようにボンディングワイヤＷで電極１０、１０'を結線した時にできるループ高さＨを小さくすることができる。また、Ｃａを含有することにより、図２に示すようにボンディングワイヤＷでバンプ２２を形成した時にできるバンプ高さＬを小さくすることができる。Ｃａの含有量は、１質量ｐｐｍ以上１００質量ｐｐｍ以下とすることができ、好ましくは１０質量ｐｐｍ以上３０質量ｐｐｍである。
By containing Ca, the loop height H formed when the
Ｎｄ、Ｓｍ及びＧｄから選択された１種又は２種以上の元素（以下、「選択添加元素」ということもある）は、Ｃａと同様、ボンディングワイヤＷで電極１０、１０'を結線した時にできるループ高さＨやバンプ高さＬを小さくすることができる。選択添加元素の含有量は、１質量ｐｐｍ以上１００質量ｐｐｍ以下とすることができ、好ましくは１０質量ｐｐｍ以上３０質量ｐｐｍである。
One or more elements selected from Nd, Sm and Gd (hereinafter, also referred to as "selective additive elements") are formed when the
選択添加元素はＣａと同様の作用効果を発揮するため、Ｃａ及び選択添加元素のいずれか一方を添加しない場合であっても、他方の添加量を増加させることでループ高さＨやバンプ高さＬを小さくすることができる。 Since the selective additive element exerts the same action and effect as Ca, even when either Ca or the selective additive element is not added, the loop height H or the bump height can be increased by increasing the addition amount of the other element. L can be reduced.
Ｃａのみを添加する場合や選択添加元素のみを添加する場合でもループ高さＨやバンプ高さＬの低減を図ることは可能である。しかし、Ｃａや選択添加元素の添加量が多くなり過ぎるとＦＡＢの真球性が低下する。これに対して、Ｎｄ、Ｓｍ及びＧｄの選択添加元素をＣａと併用した場合であると、Ｃａ及び選択添加元素のいずれか一方のみ添加する場合に比べてＦＡＢの真球性が低下しにくくなる。そのため、Ｃａのみの添加であると、所望のスペックを満たすようにループ高さＨやバンプ高さＬの低減を図ろうとすると、ＦＡＢの真球性が低下する場合であっても、Ｃａと選択添加元素を併用することでＦＡＢの真球性を維持することができる。従って、Ｃａと選択添加元素を含有することにより、Ｃａのみ使用した場合に比べＦＡＢの真球性を維持した上で、ＦＡＢを形成バンプ高さＨのより低減することができる。 It is possible to reduce the loop height H and the bump height L even when only Ca is added or when only the selective additive element is added. However, if the amount of Ca or selective additive added is too large, the sphericity of FAB deteriorates. On the other hand, when the selective additive elements of Nd, Sm and Gd are used in combination with Ca, the sphericity of FAB is less likely to decrease as compared with the case where only one of Ca and the selective additive element is added. .. Therefore, if only Ca is added, if the loop height H and the bump height L are reduced so as to satisfy the desired specifications, Ca is selected even when the sphericity of the FAB is lowered. The sphericity of FAB can be maintained by using the additive element in combination. Therefore, by containing Ca and the selective additive element, the FAB can be further reduced in the forming bump height H while maintaining the sphericity of the FAB as compared with the case where only Ca is used.
Ｃａ及び選択添加元素を共に含有するにあたって、Ｃａ及び選択添加元素の含有量の合計は、５質量ｐｐｍ以上１５０質量ｐｐｍ以下とすることができるが、好ましくは２０質量ｐｐｍ以上１００質量ｐｐｍ以下である。Ｃａ及び選択添加元素の含有量の合計が５質量ｐｐｍ以上であるとループ高さＨやバンプ高さＬについて有意な向上を得ることができ、Ｃａ及び選択添加元素の含有量の合計が２０質量ｐｐｍ以上であるとその作用がより顕著となる。Ｃａ及び選択添加元素の含有量の合計が１５０質量ｐｐｍ以下であると真球度の高いＦＡＢを形成することができ、Ｃａ及び選択添加元素の含有量の合計が１００質量ｐｐｍ以下であると更に真球度の高いＦＡＢを形成することができる。 When both Ca and the selective additive element are contained, the total content of Ca and the selective additive element can be 5 mass ppm or more and 150 mass ppm or less, but preferably 20 mass ppm or more and 100 mass ppm or less. .. When the total content of Ca and the selective additive element is 5 mass ppm or more, a significant improvement can be obtained for the loop height H and the bump height L, and the total content of Ca and the selective additive element is 20 mass. When it is ppm or more, the action becomes more remarkable. When the total content of Ca and the selective additive element is 150 mass ppm or less, FAB having high sphericity can be formed, and when the total content of Ca and the selective additive element is 100 mass ppm or less, further. FAB with high sphericity can be formed.
次に、このような構成のボンディングワイヤの製造方法の一例を説明する。 Next, an example of a method for manufacturing a bonding wire having such a configuration will be described.
まず、純度９９．９９質量％以上のＡｕに、Ｃｕを０．１質量％以上５．０質量％以下、Ｃａの含有量が１質量ｐｐｍ以上１００質量ｐｐｍ以下、選択添加元素の含有量が１質量ｐｐｍ以上１００質量ｐｐｍ以下となるようにＣｕ、Ｃａ、選択添加元素を添加したＡｕ合金を作製する。得られたＡｕ合金は、連続鋳造法にて所定の直径の棒状インゴットに鋳造される。 First, in Au having a purity of 99.99% by mass or more, Cu is 0.1% by mass or more and 5.0% by mass or less, the Ca content is 1% by mass or more and 100% by mass or less, and the content of the selective additive element is 1. An Au alloy to which Cu, Ca and selective additive elements are added so as to have a mass ppm of mass ppm or more and 100 mass ppm or less is prepared. The obtained Au alloy is cast into a rod-shaped ingot having a predetermined diameter by a continuous casting method.
次いで、棒状インゴットを伸線加工して所定の直径に達するまで縮径してボンディングワイヤとする。なお、必要に応じて伸線加工の途中で軟化熱処理を行っても良い。 Next, the rod-shaped ingot is wire-drawn and reduced in diameter until it reaches a predetermined diameter to form a bonding wire. If necessary, softening heat treatment may be performed during the wire drawing process.
そして、所定の直径まで伸線加工を行った後、必要に応じて熱処理炉中を走行させて調質熱処理を行い、ボンディングワイヤが得られる。 Then, after wire drawing to a predetermined diameter, the wire is run in a heat treatment furnace as necessary to perform heat treatment for tempering, and a bonding wire is obtained.
以上、本発明の実施形態を説明したが、これらの実施形態は例として提示したものであり、発明の範囲を限定することを意図していない。これらの実施形態は、その他の様々な形態で実施されることが可能であり、発明の趣旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これらの実施形態やその変形は、発明の範囲や要旨に含まれると同様に、特許請求の範囲に記載された発明とその均等の範囲に含まれるものである。 Although the embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, as well as in the scope of the invention described in the claims and the equivalent scope thereof.
以下、本発明を実施例によって更に具体的に説明するが、本発明はこれら実施例に限定されるものではない。 Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.
純度９９．９９質量％以上のＡｕ、純度９９．９質量％以上のＣｕ、Ｃａ、Ｎｄ、Ｓｍ及びＧｄを用いて、下記表１に示すような組成のＡｕ合金を溶解し、連続鋳造法にて棒状インゴットを作製した。作製した棒状インゴットに対して伸線加工を施して直径２０μｍに達するまで縮径し、その後、調質熱処理を施し、実施例１〜２３及び比較例１〜８のボンディングワイヤを得た。なお、実施例１〜２３及び比較例１〜８のボンディングワイヤの線径（直径）はいずれも２０μｍである。 Using Au having a purity of 99.99% by mass or more and Cu, Ca, Nd, Sm and Gd having a purity of 99.9% by mass or more, an Au alloy having a composition as shown in Table 1 below was melted and used in a continuous casting method. A rod-shaped ingot was produced. The produced rod-shaped ingot was wire-drawn to reduce its diameter until it reached a diameter of 20 μm, and then subjected to a heat treatment for tempering to obtain bonding wires of Examples 1 to 23 and Comparative Examples 1 to 8. The wire diameter (diameter) of the bonding wires of Examples 1 to 23 and Comparative Examples 1 to 8 is 20 μm.
得られた実施例１〜２３及び比較例１〜８のボンディングワイヤにつき、（１）ＦＡＢ真球性、（２）ＦＡＢ接合部と電極との接合信頼性、（３）バンプ高さ、（４）チップ損傷、（５）電極のアルミスプラッシュ、について評価を行った。具体的な評価方法は以下のとおりである。 Regarding the obtained bonding wires of Examples 1 to 23 and Comparative Examples 1 to 8, (1) FAB sphericity, (2) bonding reliability between the FAB bonding portion and the electrode, (3) bump height, (4). ) Chip damage and (5) Electrode aluminum splash were evaluated. The specific evaluation method is as follows.
（１）ＦＡＢ真球性
ワイヤボンダー（株式会社カイジョー製、ワイヤボンダーＦＢ−７８０）にてワイヤ直径の１．９〜２．１倍の大きさのＦＡＢを大気中で作製した。ＦＡＢ真球性の評価としては、実施例１〜２３及び比較例１〜８のボンディングワイヤ毎にＦＡＢを１００個ずつ作製した後、汎用型電子顕微鏡（日本電子（株）製、ＪＳＭ−６５１０ＬＡ）にて外観観察を行い、作製したＦＡＢのワイヤ平行方向と垂直方向の長さをそれぞれ測定した。ＦＡＢのワイヤ平行方向の長さＸと垂直方向の長さＹの比（Ｘ／Ｙ）の平均値が９０％以上１１０％以下であれば「真球性が高い」と判断し「◎」、ＦＡＢのワイヤ平行方向の長さＸと垂直方向の長さＹの比（Ｘ／Ｙ）の平均値が８５％以上９０％未満または１１０％を超えて１１５％以下であれば「真球性あり」と判断し「○」、上記以外もしくは目視して略円形でなければ「×」とした。(1) FAB A spherical wire bonder (manufactured by Kaijo Co., Ltd., wire bonder FB-780) was used to prepare a FAB having a size of 1.9 to 2.1 times the wire diameter in the atmosphere. As an evaluation of FAB sphericity, after producing 100 FABs for each of the bonding wires of Examples 1 to 23 and Comparative Examples 1 to 8, a general-purpose electron microscope (JSM-6510LA manufactured by JEOL Ltd.) The appearance was observed in the above, and the lengths of the produced FAB in the parallel direction and the vertical direction of the wire were measured. If the average value of the ratio (X / Y) of the length X in the parallel direction of the wire of the FAB to the length Y in the vertical direction is 90% or more and 110% or less, it is judged as "high sphericity" and "◎", If the average value of the ratio (X / Y) of the length X in the parallel direction of the wire of the FAB to the length Y in the vertical direction is 85% or more and less than 90%, or more than 110% and 115% or less, it is "spherical". , And if it is not a circle other than the above or visually, it is marked as "x".
（２）ＦＡＢ接合部と電極との接合信頼性
上記（１）で用いたワイヤボンダーを使用してワイヤ直径の１．９〜２．１倍の大きさのＦＡＢを大気中で作製し、作製したＦＡＢを半導体素子上のＡｌ電極上に接合した後、ボンディングワイヤを切断してＡｌ電極上にバンプを形成して熱処理前のサンプルを作製した。また、熱処理前のサンプルを更に２６０℃で５００時間熱処理したサンプルと、熱処理前のサンプルを１０００時間熱処理したサンプルを作製した。熱処理前のサンプルと２種類の熱処理後のサンプルそれぞれ３０個ずつについて、ボンドテスター２４００（ｄａｇｅ社製）にてバンプとＡｌ電極とのシェア強度を測定し、測定値の平均値から単位面積当たりのシェア強度を計算した。熱処理後のサンプルの単位面積当たりのシェア強度が熱処理前のサンプルの単位面積当たりのシェア強度以上であることを判断基準とし、１０００時間の熱処理後で判断基準を満たせば「接合強度の信頼性が非常に高い」と判断し「◎」、１０００時間の熱処理後では判断基準を満たさないが、５００時間の熱処理後で判断基準を満たす場合は「接合強度の信頼性がある」と判断し「○」、５００時間の熱処理後で判断基準を満たさない場合は「接合強度の信頼性が低い」と判断し「×」とした。(2) Bonding reliability between FAB bonding part and electrode Using the wire bonder used in (1) above, FAB having a size of 1.9 to 2.1 times the wire diameter is produced in the air and produced. After bonding the FAB on the Al electrode on the semiconductor element, the bonding wire was cut to form a bump on the Al electrode to prepare a sample before heat treatment. Further, a sample before heat treatment was further heat-treated at 260 ° C. for 500 hours, and a sample before heat treatment was heat-treated for 1000 hours to prepare a sample. For each of 30 samples before heat treatment and 30 samples after two types of heat treatment, the share strength between the bump and the Al electrode was measured with a bond tester 2400 (manufactured by Dage), and the average value of the measured values was measured per unit area. The share strength was calculated. Based on the judgment criteria that the share strength per unit area of the sample after heat treatment is equal to or greater than the share strength per unit area of the sample before heat treatment, and if the judgment criteria are met after 1000 hours of heat treatment, "reliability of bonding strength is high. Judged as "very high" and "◎", the judgment criteria are not met after 1000 hours of heat treatment, but if the judgment criteria are met after 500 hours of heat treatment, it is judged as "reliable joint strength" and "○" If the judgment criteria are not satisfied after the heat treatment for 500 hours, it is judged that "the reliability of the joint strength is low" and the value is "x".
（３）バンプ高さ
上記（１）で用いたワイヤボンダーを使用してワイヤ直径の１．９〜２．１倍の大きさのＦＡＢを大気中で作製し、作製したＦＡＢをＡｌ電極に接合した後、ボンディングワイヤを切断してＡｌ電極上にバンプを３０個作製した。作製したバンプを光学顕微鏡で観察してその高さを測定した。測定値の平均値が、５０μｍ未満であれば「◎」、５０μｍ以上６０μｍ未満であれば「○」、６０μｍ以上であれば「×」とした。(3) Bump height Using the wire bonder used in (1) above, a FAB having a size of 1.9 to 2.1 times the wire diameter was prepared in the air, and the prepared FAB was bonded to the Al electrode. After that, the bonding wire was cut to prepare 30 bumps on the Al electrode. The height of the prepared bump was measured by observing it with an optical microscope. When the average value of the measured values was less than 50 μm, it was evaluated as “⊚”, when it was 50 μm or more and less than 60 μm, it was evaluated as “◯”, and when it was 60 μm or more, it was evaluated as “x”.
（４）チップ損傷
上記（１）で用いたワイヤボンダーを使用してワイヤ直径の１．９〜２．１倍の大きさのＦＡＢを大気中で形成し、形成したＦＡＢをＳｉチップ上のＡｌ電極に接合したサンプルを作製した。作製したサンプルの電極膜（Ａｌ電極）を王水で溶解し、Ｓｉチップのクラックを走査型電子顕微鏡（ＳＥＭ）で観察した。１００個の接合部を観察して３μｍ以上のクラックがなく、かつ、３μｍ未満の微小なピットが１個もしくはまったく見られない場合は「◎」、３μｍ以上のクラックが２個以上５個未満の場合は実用上問題がないとして「〇」、３μｍ以上のクラックが５個以上の場合は「×」とした。(4) Chip damage Using the wire bonder used in (1) above, a FAB with a size of 1.9 to 2.1 times the wire diameter was formed in the atmosphere, and the formed FAB was formed into Al on the Si chip. A sample bonded to the electrode was prepared. The electrode film (Al electrode) of the prepared sample was dissolved in aqua regia, and cracks in the Si chip were observed with a scanning electron microscope (SEM). When observing 100 joints and there are no cracks of 3 μm or more and there is no or no minute pits of less than 3 μm, “◎” indicates that there are 2 or more and less than 5 cracks of 3 μm or more. In the case, it was evaluated as "○" because there was no practical problem, and when there were 5 or more cracks of 3 μm or more, it was evaluated as “×”.
（５）電極のアルミスプラッシュ
上記（１）で用いたワイヤボンダーを使用してワイヤ直径の１．９〜２．１倍の大きさのＦＡＢを大気中で形成し、形成したＦＡＢをＳｉチップ上のＡｌ電極に接合したサンプルを作製した。作製したサンプルの電極の外観を走査型電子顕微鏡（ＳＥＭ）で観察した。１００個の電極を観察して、ＦＡＢとの接合部周辺の電極にアルミニウムのめくれが見られない又は１個以上５個未満の場合は「◎」、５個以上１０個未満の場合は「〇」、１０個以上の場合は「×」とした。(5) Aluminum splash of electrodes Using the wire bonder used in (1) above, a FAB with a size of 1.9 to 2.1 times the wire diameter was formed in the atmosphere, and the formed FAB was placed on the Si chip. A sample bonded to the Al electrode of was prepared. The appearance of the electrodes of the prepared sample was observed with a scanning electron microscope (SEM). Observing 100 electrodes, if there is no aluminum turning over at the electrodes around the joint with the FAB, or if there are 1 or more and less than 5, "◎", if 5 or more and less than 10, "○" In the case of 10 or more, it was set as "x".
（６）総合評価
各評価で全て「◎」のものを「◎」、「○」が一つもしくは二つで他全て「◎」のものを「○」、「×」が一つでもあるものを「×」とした。なお、この評価において、「◎」のものは勿論のこと、「×」以外の「○」のものは、半導体素子の種類により接合条件に制約がない場合等の使用条件によれば、この発明の作用効果を発揮して使用し得る。
(6) Comprehensive evaluation In each evaluation, all "◎" are "◎", "○" is one or two, and all others are "◎" are "○" and "×". Was set to "x". In this evaluation, not only those with "◎" but also those with "○" other than "x" are the inventions according to the usage conditions such as when there are no restrictions on the joining conditions depending on the type of semiconductor element. It can be used by exerting the effects of.
結果は、表２に示すとおりであり、実施例１〜２３では、全ての評価項目において「◎」又は「○」となり、いずれの評価項目も良好な結果が得られた。特に、Ｃｕの含有量が３質量％以下である実施例１〜１４、１７〜２３では電極のアルミスプラッシュが「◎」となり、Ｃｕの含有量が１質量％未満である実施例１〜１３、１７，１８ではチップ損傷及び電極のアルミスプラッシュの双方が「◎」となった。また、Ｃｕの含有量が０．３質量％以上である実施例１〜１６、１９〜２３では接合信頼性が「◎」となった。Ｃａと選択添加元素の含有量の合計が２０質量ｐｐｍ以上１００質量ｐｐｍ以下である実施例１〜７、９、１４〜２０、２２では、ＦＡＢ真球性及びバンプ高さの双方が「◎」となった。Ｃｕの含有量が０．３質量％以上１質量％未満、かつＣａと選択添加元素の含有量の合計が２０質量ｐｐｍ以上１００質量ｐｐｍ以下である実施例１〜７、９では全ての評価項目において「◎」となり優れたワイヤであった。 The results are as shown in Table 2. In Examples 1 to 23, all the evaluation items were "⊚" or "○", and good results were obtained for all the evaluation items. In particular, in Examples 1 to 14 and 17 to 23 in which the Cu content is 3% by mass or less, the aluminum splash of the electrode is “⊚”, and the Cu content is less than 1% by mass in Examples 1 to 13. In 17 and 18, both the chip damage and the aluminum splash of the electrode became "◎". Further, in Examples 1 to 16 and 19 to 23 in which the Cu content was 0.3% by mass or more, the bonding reliability was "⊚". In Examples 1 to 7, 9, 14 to 20, 22 in which the total content of Ca and the selective additive element is 20 mass ppm or more and 100 mass ppm or less, both FAB sphericity and bump height are “◎”. It became. All evaluation items in Examples 1 to 7 and 9 in which the Cu content is 0.3% by mass or more and less than 1% by mass, and the total content of Ca and the selective additive element is 20% by mass or more and 100% by mass or less. It became "◎" and was an excellent wire.
一方、Ｃｕを含有しないかまたは含有量が０．１％に満たない比較例１及び２ではＦＡＢ接合部と電極との接合強度の信頼性が「×」となり、選択添加元素を含有しない比較例３や、Ｃａの含有量が１００質量ｐｐｍを越える比較例４や、選択添加元素の含有量が１００質量ｐｐｍを越える比較例５ではＦＡＢ真球性が「×」となり、Ｃａを含有しない比較例６ではバンプ高さが「×」となり、Ｃａと選択添加元素の総量が５ｐｐｍに満たない比較例７はバンプ高さが「×」となり、Ｃｕの含有量が５．０質量％を超える比較例８ではチップ損傷及び電極のアルミスプラッシュが「×」となった。 On the other hand, in Comparative Examples 1 and 2 in which Cu is not contained or the content is less than 0.1%, the reliability of the bonding strength between the FAB bonding portion and the electrode is “x”, and the comparative example does not contain the selective additive element. In Comparative Example 4 in which the Ca content exceeds 100 mass ppm, and Comparative Example 5 in which the content of the selective additive element exceeds 100 mass ppm, the FAB sphericity becomes “x” and Ca is not contained in Comparative Example 3. In Comparative Example 7, the bump height is “x” and the total amount of Ca and the selective additive element is less than 5 ppm. In Comparative Example 7, the bump height is “x” and the Cu content exceeds 5.0% by mass. In No. 8, the chip damage and the aluminum splash of the electrode became “x”.
Ｗ…ボンディングワイヤ
１０、１０‘…電極
１２…ＦＡＢ接合部
１４…１ｓｔネック部
１６…２ｎｄ接合部
２０、２０’…電極
２２…バンプ
２４…ハンダW ...
Claims (5)
Ｃａの含有量が１質量ｐｐｍ以上１００質量ｐｐｍ以下、
Ｎｄ及びＳｍからなる群から選択された１種又は２種の元素の含有量の合計が１質量ｐｐｍ以上１００質量ｐｐｍ以下であり、
Ｃａの含有量とＮｄ及びＳｍからなる群から選択された１種又は２種の元素の含有量の合計が５質量ｐｐｍ以上１５０質量ｐｐｍ以下であり、
残部がＡｕからなるボンディングワイヤ。Cu content is 0.1% by mass or more and 5.0% by mass or less,
Ca content is 1 mass ppm or more and 100 mass ppm or less,
The total content of one or two elements selected from the group consisting of Nd and Sm is 1 mass ppm or more and 100 mass ppm or less.
The total content of Ca and the content of one or two elements selected from the group consisting of Nd and Sm is 5 mass ppm or more and 150 mass ppm or less.
Bonding wire with the rest made of Au.
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