JPH0587017B2 - - Google Patents
Info
- Publication number
- JPH0587017B2 JPH0587017B2 JP60218417A JP21841785A JPH0587017B2 JP H0587017 B2 JPH0587017 B2 JP H0587017B2 JP 60218417 A JP60218417 A JP 60218417A JP 21841785 A JP21841785 A JP 21841785A JP H0587017 B2 JPH0587017 B2 JP H0587017B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- alkali metals
- wire
- bonding
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 14
- 229910052783 alkali metal Inorganic materials 0.000 claims description 12
- 150000001340 alkali metals Chemical class 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052736 halogen Inorganic materials 0.000 claims description 12
- 150000002367 halogens Chemical class 0.000 claims description 12
- 239000002736 nonionic surfactant Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000003945 anionic surfactant Substances 0.000 description 3
- 125000002091 cationic group Chemical group 0.000 description 3
- 239000003093 cationic surfactant Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/45694—Material with a principal constituent of the material being a liquid not provided for in groups H01L2224/456 - H01L2224/45691
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
（産業上の利用分野）
本発明は、半導体のチツプ電極と外部リード部
とを接続するために使用する半導体素子のボンデ
イング用銅線に関するものである。
（従来の技術とその問題点）
従来、半導体素子とリードフレームとは、アル
ミスプールに巻取られたAu線を用いて熱圧着又
は超音波熱圧着法にてワイヤボンデイングが施さ
れているが、最近、金線の代替品として経済性に
有利な銅線の使用が検討されている。
ところが、銅線は酸化を起しやすく、ボール形
成時に硬くなる欠点があるため保管が非常に困難
であつた。
さらに、スプールに巻取られたワイヤー同志が
からみ、使用時において切断してしまうという欠
点があつた。
（発明が解決しようとする技術的課題）
以上の問題を解決するための本発明の技術的課
題は、ボンデイング用銅線の酸化及びワイヤー同
志のからみを防止することである。
（技術的課題を達成するための技術的手段）
以上の技術的課題を達成するために本願発明者
は、銅線表面に非イオン系の界面活性剤をコーテ
イングすることに着目した。
界面活性剤には非イオン系のほか、陽イオン
系、陰イオン系のものがあるが、陽イオン系及び
陰イオン系の界面活性剤はアルカリ金属、ハロゲ
ン元素の含有率が高く、またイオンの解離により
銅を腐食するため使用に不適当である。
また一般の非イオン系界面活性剤においても、
通常不純物としてアルカリ金属、ハロゲン元素が
約10〜100ppm含有しており、このように比較的
大量のアルカリ金属、ハロゲン元素を含有した非
イオン系界面活性剤で銅線をコーテイングした場
合、銅の表面が腐食されて所定の性能を発揮しな
い。
以上のような結果を踏まえて本発明者はさらに
鋭意研究を重ねた結果、アルカリ金属、ハロゲン
元素の含有率を1ppm以下とした非イオン系界面
活性剤を用いると、効果的に銅表面の酸化を防止
しながら腐食も発生しないこと、及びその膜厚が
20A°未満だと酸化防止に効果がなく500A°を越え
るとボール形状が極めて不良になつてボンデイン
グ不良が生ずることを見出だし、本発明を完成す
るに至つた。
即ち、本発明のボンデイング用銅線は、銅の表
面にアルカリ金属、ハロゲン系元素の含有量が
1ppm以下の非イオン系界面活性剤を浸漬或いは
ワイピング法等によりコーテイングし、膜厚平均
が20〜500A°の界面活性被膜を形成してなること
を特徴とする。
（発明の効果）
本発明は以上説明した様に構成したので、銅表
面の酸化、腐食を効果的に防止しながら銅線同志
のからみを阻止することができ、さらにボンデイ
ング時においてその形状が極めて良好なボールを
形成し得て所定のボンデイング強度を得ることが
できる。
従つて、アルカリ金属、ハロゲン元素の含有率
が高いこと等の理由から使用に不適当な陽イオン
系、陰イオン系並びに一般に用いられる従来周知
な非イオン系界面活性剤を用いた場合の欠点を解
消し、金線の代替品として十分な特性を備えると
共に、金線に比して極めて低コストでの作成が可
能な半導体素子のボンデイング用銅線を提供でき
た。
（実施例）
以下、実施例について説明する。
表（１）中の試料No.１〜５は、非イオン系界面
活性剤である多価アルコールエステルにおいて、
アルカリ金属、ハロゲン元素の含有率を表中記載
量としたもので、それら各試料を、純度99.99wt
％の高純度銅からなる銅板表面に塗布した場合の
腐食性をJIS−K2513に準拠して測定した。結果
も同表中に記載する。
(Industrial Application Field) The present invention relates to a copper wire for bonding a semiconductor element, which is used to connect a semiconductor chip electrode and an external lead portion. (Prior art and its problems) Conventionally, semiconductor elements and lead frames have been wire bonded by thermocompression bonding or ultrasonic thermocompression bonding using Au wire wound around an aluminum spool. Recently, the use of economically advantageous copper wire has been considered as a substitute for gold wire. However, copper wire has the drawback of being easily oxidized and becoming hard when formed into a ball, making it very difficult to store it. Furthermore, there was a drawback that the wires wound around the spool would get tangled with each other and break during use. (Technical Problem to be Solved by the Invention) A technical problem to be solved by the present invention in order to solve the above problems is to prevent oxidation of copper wires for bonding and tangle of wires. (Technical Means for Achieving the Technical Problem) In order to achieve the above technical problem, the inventors of the present application focused on coating the surface of the copper wire with a nonionic surfactant. In addition to nonionic surfactants, there are cationic and anionic surfactants.Cationic and anionic surfactants have a high content of alkali metals and halogen elements, and also have high ion content. It is unsuitable for use because it corrodes copper due to dissociation. Also, in general nonionic surfactants,
Normally, it contains about 10 to 100 ppm of alkali metals and halogen elements as impurities, and when copper wire is coated with a nonionic surfactant containing relatively large amounts of alkali metals and halogen elements, is corroded and does not perform as expected. Based on the above results, the present inventor conducted further intensive research and found that using a nonionic surfactant with an alkali metal and halogen element content of 1 ppm or less effectively suppresses the oxidation of the copper surface. While preventing corrosion, the film thickness is
It was discovered that if the temperature is less than 20 A°, the oxidation prevention effect is not effective, and if it exceeds 500 A°, the ball shape becomes extremely poor, resulting in defective bonding, and this led to the completion of the present invention. That is, the bonding copper wire of the present invention has a content of alkali metals and halogen elements on the copper surface.
It is characterized by being coated with 1 ppm or less of a nonionic surfactant by dipping or wiping to form a surface active film with an average thickness of 20 to 500 A°. (Effects of the Invention) Since the present invention is configured as described above, it is possible to effectively prevent oxidation and corrosion of the copper surface while preventing entanglement of copper wires, and furthermore, the shape of the copper wires can be extremely reduced during bonding. A good ball can be formed and a predetermined bonding strength can be obtained. Therefore, we will address the disadvantages of using cationic and anionic surfactants, which are unsuitable for use due to their high content of alkali metals and halogen elements, as well as conventionally well-known nonionic surfactants. We were able to provide a copper wire for bonding semiconductor devices that has sufficient characteristics as a substitute for gold wire and can be produced at a much lower cost than gold wire. (Example) Examples will be described below. Samples No. 1 to 5 in Table (1) contain polyhydric alcohol esters, which are nonionic surfactants.
The contents of alkali metals and halogen elements are as shown in the table, and each sample has a purity of 99.99wt.
% of the surface of a copper plate made of high purity copper was measured in accordance with JIS-K2513. The results are also listed in the same table.
【表】
尚、表中記載のアルカリ金属はNaとＫの合計、
同ハロゲン元素はClを指す。
この結果から、アルカリ金属、ハロゲン元素の
含有率の合計から1ppm以下である場合に限り、
銅表面の腐食防止効果を得られることがかくにん
できた。
表（２）中の試料No.１〜12は、99.99wt％の高
純度銅を線引加工と中間処理とをくり返して直径
30μのCu線に仕上げ、それにアルカリ金属、ハロ
ゲン系元素の含有量が1ppm以下の多価アルコー
ルエステルをコーテイングすると共にその膜厚平
均を本発明で限定した範囲内とした本発明実施
品、試料No.13〜15は前記膜厚平均を本発明の範囲
外とした比較品、試料No.16は前記と同様にして仕
上げたCu線にコーテイングを施さない比較品で
ある。
これら各試料を用いて半導体のチツプ電極と外
部リード部とを接続した場合のボンデイング特性
を測定した。結果を同表中に記す。[Table] The alkali metals listed in the table are the sum of Na and K,
The halogen element refers to Cl. From this result, only when the total content of alkali metals and halogen elements is 1 ppm or less,
It has now been found that corrosion prevention effects on copper surfaces can be obtained. Samples No. 1 to 12 in Table (2) are made of 99.99wt% high-purity copper that has been repeatedly subjected to wire drawing and intermediate treatment to obtain diameters of
A product of the present invention, sample No., which is finished with a Cu wire of 30μ and coated with a polyhydric alcohol ester containing 1 ppm or less of alkali metals and halogen elements, and the average thickness of the film is within the range defined by the present invention. Sample No. 13 to 15 are comparative products in which the average film thickness is outside the range of the present invention, and Sample No. 16 is a comparative product in which the Cu wire finished in the same manner as above was not coated. Using each of these samples, bonding characteristics were measured when semiconductor chip electrodes and external lead portions were connected. The results are shown in the same table.
【表】【table】
【表】【table】
【表】
表（２）の結果から、表面にアルカリ金属、ハ
ロゲン系元素の含有量が1ppm以下の非イオン系
界面活性剤をコーテイングすると共に、その膜厚
平均が20〜500A°である界面活性被膜を形成した
本発明実施品（試料No.１〜12）において、上述の
効果を有することが確認できた。[Table] From the results in Table (2), it is found that the surface is coated with a nonionic surfactant containing 1 ppm or less of alkali metals and halogen elements, and the surface active agent has an average film thickness of 20 to 500 A°. It was confirmed that the products of the present invention (sample Nos. 1 to 12) on which a film was formed had the above-mentioned effects.
Claims (1)
含有量が1ppm以下の非イオン系界面活性剤をコ
ーテイングし、膜厚平均が20〜500A°の界面活性
被膜を形成したことを特徴とする半導体素子のボ
ンデイング用銅線。1. A semiconductor device characterized by coating the surface of copper with a nonionic surfactant containing 1 ppm or less of alkali metals and halogen elements to form a surfactant film with an average thickness of 20 to 500 A°. Copper wire for bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60218417A JPS6278862A (en) | 1985-09-30 | 1985-09-30 | Copper wire for bonding of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60218417A JPS6278862A (en) | 1985-09-30 | 1985-09-30 | Copper wire for bonding of semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6278862A JPS6278862A (en) | 1987-04-11 |
| JPH0587017B2 true JPH0587017B2 (en) | 1993-12-15 |
Family
ID=16719585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60218417A Granted JPS6278862A (en) | 1985-09-30 | 1985-09-30 | Copper wire for bonding of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6278862A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2836692B2 (en) * | 1988-09-30 | 1998-12-14 | 田中電子工業株式会社 | Semiconductor device boarding wires |
| JPH03165044A (en) * | 1989-11-22 | 1991-07-17 | Tanaka Denshi Kogyo Kk | Covered wire |
| US8610291B2 (en) | 2006-08-31 | 2013-12-17 | Nippon Steel & Sumikin Materials Co., Ltd. | Copper alloy bonding wire for semiconductor device |
| JP5152897B2 (en) * | 2006-11-21 | 2013-02-27 | タツタ電線株式会社 | Copper bonding wire |
| JP5665956B2 (en) * | 2013-12-11 | 2015-02-04 | 日鉄住金マイクロメタル株式会社 | Bonding wire and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167044A (en) * | 1983-03-11 | 1984-09-20 | Mitsubishi Metal Corp | Gold or gold alloy fine wire for wire-bonding semiconductor device |
| JPS60124959A (en) * | 1983-12-09 | 1985-07-04 | Sumitomo Electric Ind Ltd | Wire for connecting semiconductor element |
-
1985
- 1985-09-30 JP JP60218417A patent/JPS6278862A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167044A (en) * | 1983-03-11 | 1984-09-20 | Mitsubishi Metal Corp | Gold or gold alloy fine wire for wire-bonding semiconductor device |
| JPS60124959A (en) * | 1983-12-09 | 1985-07-04 | Sumitomo Electric Ind Ltd | Wire for connecting semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6278862A (en) | 1987-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |