JPH03165044A - Covered wire - Google Patents

Covered wire

Info

Publication number
JPH03165044A
JPH03165044A JP1306083A JP30608389A JPH03165044A JP H03165044 A JPH03165044 A JP H03165044A JP 1306083 A JP1306083 A JP 1306083A JP 30608389 A JP30608389 A JP 30608389A JP H03165044 A JPH03165044 A JP H03165044A
Authority
JP
Japan
Prior art keywords
wire
antistatic agent
heat resisting
insulating material
metal wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1306083A
Other languages
Japanese (ja)
Inventor
Tatsuichi Tsumaki
妻木　達一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP1306083A priority Critical patent/JPH03165044A/en
Publication of JPH03165044A publication Critical patent/JPH03165044A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To remove changing property by providing a cover comprising antistatic agent on the surface of metal wire which is covered with insulating material or heat resisting material. CONSTITUTION:A cover comprising antistatic agent is provided on the surface of metal wire covered with insulating material or heat resisting material. As the antistatic agent, nonionic surface active agent is used. For bonding wire for semiconductors, the agent from which ions of Na, K, Cl, Br and the like are removed is used. As the nonionic surface active agent, polyoxyethylene alkyl ether, polyoxyethylene phenolether, polyoxyethylene alkyl naphthol ether and the like are listed. As the metal wire, gold, copper and aluminum wires are listed. As the insulating material/heat resisting material, heat resisting polyurethane, polyformal, polyamide, polyester, polyamideimide, polyimide, polyesterimide and the like are listed. Thus, the insulating material and the heat resisting material are not charged, and wire breakdown due to the entanglement and the tight contact during the manipulation after the covering can be prevented.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体用のボンディングワイヤー、その他のボ
ンディングワイヤー、さらに小形のモーターコイル用絶
縁ワイヤーなどに有用な被覆線に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a coated wire useful for bonding wires for semiconductors, other bonding wires, insulated wires for small motor coils, and the like.

（従来の技術とその問題点） 電気製品の小形化にともない部品であるワイヤーも細径
化の傾向にあり、従来、裸のまま使用できていたワイヤ
ーも、その接触を避けるために絶縁膜をコートしている
。ところが、その絶縁性のため帯電しやすく、工程中に
絡み、密着などしてたやすく断線する問題が発生した。(Conventional technology and its problems) As electrical products become smaller, wires, which are components, tend to become smaller in diameter, and wires that could previously be used bare are now coated with an insulating film to prevent contact. It's coated. However, due to its insulating properties, it was easily charged with electricity, and during the process it became tangled and stuck, causing problems such as wire breakage.

特に、半導体用ボンディングワイヤーでは、実装密度が
高密度化しているため、金、銅、アルミニウム線には耐
熱性被膜がコートされるようになってきているも、同じ
く帯電しやすくなり、スプールからの引出し時や走行中
のガイド、ボンダーのキャピラリー周辺、又、被覆工程
でワイヤーが静電気により絡み、密着を起こし、断線や
操作性の不都合を生じている。さらに、静電気による絶
縁破壊の恐れも出てきた。In particular, as bonding wires for semiconductors are becoming more densely packaged, gold, copper, and aluminum wires are now coated with heat-resistant coatings, but they are also more likely to be charged with electricity and can be easily removed from the spool. Wires get tangled and stuck together due to static electricity at the time of drawing out, in the guide during running, around the capillary of the bonder, and during the coating process, causing wire breakage and inconvenience in operability. Furthermore, there is a risk of dielectric breakdown due to static electricity.

（発明が解決しようとする問題点） 本発明は前記した問題点を解決することを目的とするも
ので、絶縁材或いは耐熱材で被覆された金属線から帯電
性を除去すること、絶縁性・耐熱性の利点を失なわない
ことの二点を同時に満たしている被覆線を提供するにあ
る。(Problems to be Solved by the Invention) The purpose of the present invention is to solve the above-mentioned problems. The object of the present invention is to provide a coated wire that simultaneously satisfies the two requirements of not losing the advantage of heat resistance.

（問題点を解決するための手段） 本発明の被覆線では、絶縁材或いは耐熱材で被覆された
金属線の表面に帯電防止剤からなる被膜を有するものと
したことを特徴とする。(Means for Solving the Problems) The coated wire of the present invention is characterized in that the surface of the metal wire coated with an insulating material or a heat-resistant material has a coating made of an antistatic agent.

又、本発明における帯電防止剤は非イオン界面活性剤が
好ましく、特に半導体用ボンディングワイヤーでは不純
物たとえばＮａ、　Ｋ、（１，Ｂｒ等のイオンを除き、
それにより本発明品が使用される部品や製品に悪影響を
与えなくすることが可能である。In addition, the antistatic agent in the present invention is preferably a nonionic surfactant, and in particular, in bonding wires for semiconductors, impurities such as ions such as Na, K, (1, Br, etc.) are removed, and the antistatic agent is preferably a nonionic surfactant.
Thereby, it is possible to prevent the product of the present invention from having an adverse effect on the parts and products in which it is used.

非イオン界面活性剤としては例えば、ポリオキシエチレ
ンアルキルエーテル、ポリオキシエチレンフェノールエ
ーテル、ポリオキシエチレンアルキルナフトールエーテ
ル、ポリオキシエチレングリコール脂肪酸エステル、ポ
リオキシエチレングリコール燐酸エステル、脂肪酸アミ
ドまたはアリルスルホン酸アミドとエチレンオキサイド
付加物、Ｎ−ポリオキシエチレンアルキルアミン、ポリ
オキシプロピレンアルキルエーテル、ジェタノールアミ
ンの脂肪酸アミド、高アルコールの脂肪酸エステル、多
価アルコールの脂肪酸エステル等が挙げられ、適宜選択
される。また、弗素系界面活性剤やシリコン系界面活性
剤も使用できる。これ等はすべり性の改良、密着防止に
も効果があり、例えば半導体のパッケージングの際、エ
ポキシレジンとの密着性を低下させ、ヒートサイクルに
おける膨張収縮が緩和されて被覆線の断線を防止する効
果を合わせ持つ様になる。Examples of nonionic surfactants include polyoxyethylene alkyl ether, polyoxyethylene phenol ether, polyoxyethylene alkyl naphthol ether, polyoxyethylene glycol fatty acid ester, polyoxyethylene glycol phosphate ester, fatty acid amide, or allyl sulfonate amide. Examples include ethylene oxide adducts, N-polyoxyethylene alkyl amines, polyoxypropylene alkyl ethers, fatty acid amides of jetanolamine, fatty acid esters of high alcohols, fatty acid esters of polyhydric alcohols, etc., which are appropriately selected. Furthermore, fluorine-based surfactants and silicone-based surfactants can also be used. These are effective in improving slipperiness and preventing adhesion; for example, when packaging semiconductors, they reduce adhesion with epoxy resin, alleviate expansion and contraction during heat cycles, and prevent breakage of covered wires. It seems to have both effects.

弗素系界面活性剤の例としては、パーフルオロアルキル
エチレンオキシド付加物、パーフルオロトリメチルアン
モニューム塩、パーフルオロアルキルスルホン酸塩、パ
ーフルオロアルキル燐酸エステル、パーフルオロアルキ
ルベタイン等が、シリコーン系界面活性剤の例としては
ジメチルシロキサン・メチル（ポリオキシエチレン）シ
ロキサン共重合体、ジメチルシロキサン・メチル（ポリ
オキシプロピレン）シロキサン共重合体等が挙げられる
。Examples of fluorine-based surfactants include perfluoroalkyl ethylene oxide adducts, perfluorotrimethyl ammonium salts, perfluoroalkyl sulfonates, perfluoroalkyl phosphates, perfluoroalkyl betaines, etc. Examples include dimethylsiloxane/methyl(polyoxyethylene)siloxane copolymer, dimethylsiloxane/methyl(polyoxypropylene)siloxane copolymer, and the like.

更に帯電防止剤は他のカチオン、アニオン、両性界面活
性剤も使用可能である。Furthermore, other cationic, anionic, and amphoteric surfactants can also be used as the antistatic agent.

以上述べた界面活性剤は単独または混合して使用出来、
挙げた例に限定されるものではない。The surfactants mentioned above can be used alone or in combination.
It is not limited to the examples given.

又、帯電防止剤からなる被膜は、厚いほど帯電防止上有
効であるが、−室以上付着させると、線の走行工程で付
着やカスの溜りや水分過多による腐食等のトラブルが発
生するため、１１．０５〜１％濃度の帯電防止剤溶液で
コートし、平均厚さは０．０４Ｓμ以下が好ましい。こ
の厚さは帯電防止剤の付着量と表面積から計算した値で
ある。In addition, the thicker the coating made of antistatic agent, the more effective it is in preventing static electricity, but if it is deposited more than 100%, problems such as adhesion, accumulation of debris, and corrosion due to excess moisture will occur during the wire running process. Preferably, it is coated with an antistatic agent solution having a concentration of 11.05 to 1%, and the average thickness is 0.04 Sμ or less. This thickness is a value calculated from the amount of antistatic agent deposited and the surface area.

又、金属線としては径が１０［１μ以下、特に３５μ以
下の金、銅、アルミニウム線が挙げられる。Examples of the metal wire include gold, copper, and aluminum wires having a diameter of 10[mu] or less, particularly 35[mu] or less.

又、絶縁材・耐熱材としては、耐熱ポリウレタン、ポリ
マール、ポリアミド、ポリエステル、ポリアミドイミド
、ポリイミド、ポリエステルイミド等が挙げられる。Insulating materials and heat-resistant materials include heat-resistant polyurethane, polymer, polyamide, polyester, polyamideimide, polyimide, polyesterimide, and the like.

又、本発明の被膜線の製造方法としては、金属線に絶縁
材或いは耐熱材をコーティングしてキユアリングした後
に、水、アルコール等の溶剤または分散媒体に浸漬或い
はロールコート等の一般的手段で塗布して、帯電防止剤
からなる被膜を形成する。In addition, the method for manufacturing the coated wire of the present invention includes coating a metal wire with an insulating material or a heat-resistant material and curing the wire, and then applying the coated wire in a solvent such as water or alcohol or a dispersion medium by general means such as dipping or roll coating. Then, a film made of an antistatic agent is formed.

（作用） 帯電防止剤からなる被膜が空気中の水分を吸湿して、電
気をアースまたは空気中に放電して働く。(Function) A film made of antistatic agent absorbs moisture from the air and works by discharging electricity to the ground or into the air.

それにより、絶縁材・耐熱材は帯電しなくなり、所要の
性能を維持して働く。As a result, the insulating and heat-resistant materials are no longer charged and work while maintaining the required performance.

（実施例） 以下本発明の実施の一例を詳細に説明する。(Example) An example of implementing the present invention will be described in detail below.

図中（Ａ）は被膜線であり、この被膜線（Ａ）は金属線
（１）に絶縁材或いは耐熱材（２）を被覆すると共にこ
の絶縁材或いは耐熱材（２）に帯電防止剤からなる被膜
（３）を被覆形成している。In the figure, (A) is a coated wire, and this coated wire (A) is a metal wire (1) coated with an insulating material or a heat-resistant material (2), and this insulating material or heat-resistant material (2) is coated with an antistatic agent. A coating (3) is formed on the surface.

実施例　■ 金属線　　　金線、径３０μφ 耐熱材　　　耐熱ポリウレタン樹脂 帯電防止剤　非イオン界面活性剤としてポリオキシエチ
レンアルキルアミン ルの０．２％エタノール溶液 金属線（１）に耐熱ポリウレタン樹脂を塗布した後、２
７５℃で焼付けして耐熱材（２）を硬化形成する。次い
で、非イオン界面活性剤の０．２％エタノール溶液に浸
漬して、耐熱材（２）に帯電防止剤の被膜（３）を塗布
形成し、送風乾燥しながら巻取りした。Example ■ Metal wire Gold wire, diameter 30μφ Heat-resistant material Heat-resistant polyurethane resin Antistatic agent 0.2% ethanol solution of polyoxyethylene alkylamine as a nonionic surfactant After applying heat-resistant polyurethane resin to the metal wire (1) ,2
The heat-resistant material (2) is hardened by baking at 75°C. Next, the antistatic agent coating (3) was applied to the heat-resistant material (2) by immersing it in a 0.2% ethanol solution of a nonionic surfactant, and the material was wound up while being blown dry.

この被膜線（Ａ）を半導体用ボンディングワイヤーとし
て用いたところ、そのボンディング工程でトラブルは断
線も絶縁破壊も発生しなかった。When this coated wire (A) was used as a bonding wire for a semiconductor, no troubles such as disconnection or dielectric breakdown occurred during the bonding process.

実施例　■ 金属線　　　銅線、径２５μφ 絶縁材　　　ホルマール系樹脂 帯電防止剤　アミン系帯電防止剤としてＮ・ポリオキシ
エチレンアルキルア ミンの０．３％イソプロピルアル コール溶液 金属線（１）にホルマール系樹脂を塗布した後、２４５
℃で焼付けして絶縁材（２）を硬化形成する。Example ■ Metal wire Copper wire, diameter 25 μΦ Insulating material Formal resin antistatic agent 0.3% isopropyl alcohol solution of N polyoxyethylene alkylamine as amine antistatic agent Apply formal resin to metal wire (1) After that, 245
The insulating material (2) is hardened by baking at .degree.

次いで、アミン系帯電防止剤の０．３％イソプロピルア
ルコール溶液をコーターロールで塗布して、絶縁材（２
）に帯電防止材の被覆（３）を被覆し、乾燥して巻き取
りした。Next, a 0.3% isopropyl alcohol solution of an amine-based antistatic agent was applied using a coater roll to coat the insulation material (2
) was coated with antistatic material coating (3), dried and rolled up.

実施例　■ 金属線　　　アルミニウム線、径３０μφ耐熱材　　　
耐熱ポリウレタン樹脂 帯電防止剤　非イオン界面活性剤としてポリオキシエチ
レンアルキルエーテ ルの０．１５％と、パーフルオロア ルキルエチレンオキシド付加物 の［１，０５％エタノール溶液 金属線（１）に耐熱ポリウレタン樹脂を塗布した後、２
７５℃で焼付けして耐熱材（２）を硬化形成する。次い
で、非イオン界面活性剤の０，２％エタノール溶液に浸
漬して、耐熱材（２）に帯電防止剤の被膜（３）を塗布
形成し、送風乾燥しながら巻取りした。Example ■ Metal wire Aluminum wire, diameter 30μφ heat-resistant material
Heat-resistant polyurethane resin antistatic agent Heat-resistant polyurethane resin was applied to the metal wire (1) using 0.15% of polyoxyethylene alkyl ether as a nonionic surfactant and 1,05% ethanol solution of perfluoroalkyl ethylene oxide adduct. After, 2
The heat-resistant material (2) is hardened by baking at 75°C. Next, the antistatic agent coating (3) was applied to the heat-resistant material (2) by immersing it in a 0.2% ethanol solution of a nonionic surfactant, and the material was wound up while being air-dried.

（発明の効果） したがって本発明によれば次の利点がある。(Effect of the invention) Therefore, the present invention has the following advantages.

■静電気を帯びないから、被覆後の操作中の絡みや密着
による断線がない。■Since it does not carry static electricity, there is no disconnection due to entanglement or close contact during operation after coating.

■操作性良好である。■Good operability.

■滑りが良くて、詰りゃ張力ムラが出ない。■It has good sliding properties and will not cause uneven tension even if it gets clogged.

■絶縁破壊の心配がない。■No worries about insulation breakdown.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の被覆線の一実施例を示す横断面図であ
る。 図中 （１） は金属線 （２） は絶縁材或いは耐熱材 （３） は帯電防止剤からなる被膜 特 許 出 願 人 田中電子工業株式会社 代 理 人 早 川 政 名 手 続 補 正 書 平成２年２月５ 日 被 覆 線 氏名（名称） 田中電子工業株式会社 平成 年 月 日 補　　正　　書 １、明細書第３頁第２行目の「Ｋ、」の後にｒｃｅＪを
挿入する。 ２、同書第頁第１５行目の「と」を「の」に補正する。 ３、同書第頁第１５行目の「高」を「多価」に補正する
。 ４、同書第５頁第８行目の「マール」の前に「ビニルホ
ル」を挿入する。 ５、同書第頁第１５行目の「水」の前に「帯電防止剤を
含む」を挿入する。 ６、同書第７頁第１５行および第８頁第９行のそれぞれ
の後に「この被膜線（Ａ）を半導体用ボンディングワイ
ヤーとして用いたところ、そのボンディング工程でトラ
ブルは断線も絶縁破壊も発生しなかった。」を挿入する
。FIG. 1 is a cross-sectional view showing an embodiment of the covered wire of the present invention. In the figure, (1) is a metal wire (2) is an insulating material or a heat-resistant material (3) is a coating made of an antistatic agent Patent applicant Tanaka Electronics Co., Ltd. Agent Masana Hayakawa Procedural Amendment Statement February 5, 1990 Covered Wire Name (Name) Tanaka Electronics Co., Ltd. Heisei Date Amendment Book 1, page 3, line 2 of the specification, insert rceJ after "K,". 2. Correct "to" in line 15 of page 15 of the same book to "no". 3. Correct "high" on page 15, line 15 of the same book to "multivalent." 4. Insert "vinylhor" in front of "maru" on page 5, line 8 of the same book. 5. Insert "contains antistatic agent" before "water" on page 15 of the same book, line 15. 6. On page 7, line 15 of the same book, and page 8, line 9, it says, ``When this coated wire (A) was used as a bonding wire for semiconductors, troubles such as disconnection and dielectric breakdown occurred during the bonding process. Insert "There was no such thing."

Claims (1)

【特許請求の範囲】[Claims] 絶縁材或いは耐熱材で被覆された金属線の表面に帯電防
止剤からなる被膜を有する被覆線。A coated wire has a coating made of an antistatic agent on the surface of a metal wire coated with an insulating material or a heat-resistant material.
JP1306083A 1989-11-22 1989-11-22 Covered wire Pending JPH03165044A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1306083A JPH03165044A (en) 1989-11-22 1989-11-22 Covered wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1306083A JPH03165044A (en) 1989-11-22 1989-11-22 Covered wire

Publications (1)

Publication Number Publication Date
JPH03165044A true JPH03165044A (en) 1991-07-17

Family

ID=17952826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1306083A Pending JPH03165044A (en) 1989-11-22 1989-11-22 Covered wire

Country Status (1)

Country Link
JP (1) JPH03165044A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1860697A3 (en) * 2006-05-11 2017-09-13 Mitsubishi Electric Corporation Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167043A (en) * 1983-03-11 1984-09-20 Mitsubishi Metal Corp Gold or gold alloy fine wire for wire-bonding semiconductor device
JPS6278862A (en) * 1985-09-30 1987-04-11 Tanaka Denshi Kogyo Kk Copper wire for bonding of semiconductor element
JPH01200514A (en) * 1988-02-04 1989-08-11 Mitsubishi Metal Corp Insulation covered gold or gold alloy extra fine wire for bonding semiconductor element
JPH01251727A (en) * 1988-03-31 1989-10-06 Mitsubishi Metal Corp Bonding wire for element of semiconductor and the like

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167043A (en) * 1983-03-11 1984-09-20 Mitsubishi Metal Corp Gold or gold alloy fine wire for wire-bonding semiconductor device
JPS6278862A (en) * 1985-09-30 1987-04-11 Tanaka Denshi Kogyo Kk Copper wire for bonding of semiconductor element
JPH01200514A (en) * 1988-02-04 1989-08-11 Mitsubishi Metal Corp Insulation covered gold or gold alloy extra fine wire for bonding semiconductor element
JPH01251727A (en) * 1988-03-31 1989-10-06 Mitsubishi Metal Corp Bonding wire for element of semiconductor and the like

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1860697A3 (en) * 2006-05-11 2017-09-13 Mitsubishi Electric Corporation Semiconductor device

Similar Documents

Publication Publication Date Title
US6358847B1 (en) Method for enabling conventional wire bonding to copper-based bond pad features
JPS5882503A (en) Magnet wire covered with lubricant
US8569877B2 (en) Metallic solderability preservation coating on metal part of semiconductor package to prevent oxide
JPH03165044A (en) Covered wire
JPS6026910A (en) Optical fiber core
JP2836692B2 (en) Semiconductor device boarding wires
JPS63225412A (en) Heat processing of multi-core superconductor
JPH066920Y2 (en) Anticorrosion tape for overhead insulated wire
JP3188171B2 (en) Manufacturing method of rectangular insulated wire
JPH0817250A (en) Insulated wire
JP2543204Y2 (en) Overhead insulated wire
JPS5931804B2 (en) Manufacturing method of flat insulated wire
US1979961A (en) Method of preventing corrosion and corrosion resisting joints
JP2000260618A (en) Coil for electric apparatus and manufacture thereof
JPH087662A (en) Insulating electric wire
JPH04154133A (en) Prevention of short circuit of bonding wire
JPH07182925A (en) Insulated wire
CN1178239C (en) Electronic device, leads thereof and their manufactures
JP3658668B2 (en) Bonding wire for semiconductor element and manufacturing method thereof
JPS63202805A (en) Rustproof wire
JPH01258318A (en) Manufacture of cable wound with polyimide tape
JPH04300157A (en) Method of removing insulating coating from magnet wire
JPS60219719A (en) Method of producing metallized film capacitor
JP2003133715A (en) Circuit board, removing method of flux, and electronic circuit board and manufacturing method thereof
JPH04315445A (en) Bonding wire and manufacture of semiconductor integrated circuit device using same