JPH01251727A - Bonding wire for element of semiconductor and the like - Google Patents

Bonding wire for element of semiconductor and the like

Info

Publication number
JPH01251727A
JPH01251727A JP63079039A JP7903988A JPH01251727A JP H01251727 A JPH01251727 A JP H01251727A JP 63079039 A JP63079039 A JP 63079039A JP 7903988 A JP7903988 A JP 7903988A JP H01251727 A JPH01251727 A JP H01251727A
Authority
JP
Japan
Prior art keywords
wire
layer
coating layer
bonding
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63079039A
Other languages
Japanese (ja)
Inventor
Toshinori Ishii
利昇 石井
Tamotsu Mori
保 森
Masayuki Tanaka
正幸 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP63079039A priority Critical patent/JPH01251727A/en
Publication of JPH01251727A publication Critical patent/JPH01251727A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Insulated Conductors (AREA)

Abstract

PURPOSE:To obtain a wire of a copper wire or a copper alloy wire having an insulating and corrosionproof coating layer which can be preserved a long time and whose coefficient of friction at the passage of a clamper and a capillary in a bonding apparatus is small by a method wherein the insulating and corrosionproof coating layer is formed on the surface of the copper wire or the copper alloy wire and a lubricating layer is formed on this layer. CONSTITUTION:A wire 1 for an element such as a semiconductor or the like is formed in such a way that a lubricating layer 2 is formed on the surface of a copper wire or a copper alloy wire 4 having an insulating and corrosionproof coating layer 3; The coating layer 3 is formed of an organic resin such as polyurethane, polyethylene, an epoxy or the like; the lubricating layer 2 is formed of an ethylene tetrafluoride resin, a surface-active agent or the like. In addition, it is desirable that a layer thickness of the coating layer 3 formed of the organic resin is about 0.3-2.0mum and that a layer thickness of the lubricating layer 2 formed of the ethylene tetrafluoride resin or the surface-active agent is about 0.05-1.0mum. The surface-active agent is an anionic surface-active agent, a nonionic active agent or the like. For example, polyoxyethylene alkylether sulfate, polyoxyethylene alkylether or the like can be used. It is possible to prevent an electrical short circuit and oxidation.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、たとえば集積回路（ＩＣ，ＬＳＩ、トラン
ジスター等）素子上の電極と、回路配線基板上（リード
フレーム、セラミック基板等）の導体配線との間を接続
する半導体等の素子用ボンディングワイヤに関するもの
である。[Detailed Description of the Invention] [Field of Industrial Application] This invention is applicable to, for example, electrodes on integrated circuit (IC, LSI, transistor, etc.) elements and conductor wiring on circuit wiring boards (lead frames, ceramic substrates, etc.). This relates to bonding wires for devices such as semiconductors that connect between.

〔従来の技術〕[Conventional technology]

従来、この種のボンディングワイヤ（以下ワイヤと略称
する）としては、直径１８〜５０μｍ程度の課の金また
は金合金極細線が使用されていた。Conventionally, as this type of bonding wire (hereinafter abbreviated as wire), an ultrafine gold or gold alloy wire with a diameter of about 18 to 50 μm has been used.

しかしながら、このワイヤでは多ビン高密度配線の場合
に金の使用量が増すと共にワイヤの少しの曲りでも隣の
ワイヤと接触し短絡が発生していた。However, with this wire, the amount of gold used increases in the case of high-density wiring with many bins, and even a slight bend in the wire causes contact with an adjacent wire, causing a short circuit.

また、ワイヤボンド状態ではワイヤ同士の接触が無く正
常であっても、レジンモールド（樹脂封止）時のワイヤ
流れにより短絡が発生するという問題があった。In addition, even if the wire bonding state is normal with no contact between the wires, there is a problem in that short circuits occur due to wire flow during resin molding (resin sealing).

高価な金の使用を避はコストを下げるという点から、銅
または銅合金極細線のワイヤが考案され、又短絡防止の
点から樹脂材で一層状に被覆した絶縁被覆ワイヤら考案
されている。In order to avoid the use of expensive gold and reduce costs, copper or copper alloy ultrafine wires have been devised, and insulated wires coated with a single layer of resin have been devised to prevent short circuits.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところが、上記公知の銅または銅合金極細線のワイヤは
、銅という金属の特徴から表面の酸化が不可避であり、
長期保存が不可能であった。又、上記公知の絶縁被覆ワ
イヤは、ボンディング装置のクランパーおよびキャピラ
リー通過時の摩擦係数が大きいため、安定した繰り出し
が出来ず、そのために該ワイヤがキャピラリー等に詰ま
って該ボンディング装置が停止したり、該ワイヤが断線
されることも毎々あった。However, the surface of the known copper or copper alloy ultrafine wire inevitably oxidizes due to the characteristics of the metal copper.
Long-term storage was not possible. In addition, the above-mentioned known insulated wire has a large coefficient of friction when passing through the clamper and capillary of the bonding device, so it cannot be fed out stably.As a result, the wire gets stuck in the capillary, etc., and the bonding device stops. Occasionally, the wire would be disconnected.

〔課題を解決するための手段〕[Means to solve the problem]

そこで、本発明者は、長期保存が可能で、上記ボンディ
ング装置のクランパーおよびキャピラリー通過時の摩擦
係数の小さい絶縁防食被覆層を有する銅または銅合金線
の、ワイヤを開発すべく、研究を行なった結果、 絶縁防食被覆層を有する銅または銅合金線の表面に更に
潤滑層を被覆すればよいという知見を得たものである。Therefore, the present inventor conducted research to develop a copper or copper alloy wire that can be stored for a long time and has an insulating and anticorrosive coating layer that has a small coefficient of friction when passing through the clamper and capillary of the bonding device. As a result, it was found that the surface of a copper or copper alloy wire having an insulating and anticorrosion coating layer may be further coated with a lubricating layer.

この発明は、かかる知見に基づいてなされたものであっ
て、絶縁防食被覆層を有する銅または銅合金線の表面に
潤滑層を形成してなる半導体等の素子用ワイヤである。The present invention was made based on this knowledge, and is a wire for devices such as semiconductors, which is formed by forming a lubricating layer on the surface of a copper or copper alloy wire having an insulating and anticorrosive coating layer.

そして、上記被覆層はポリウレタン、ポリエチレンまた
はエポキシ等の有機樹脂で形成し、上記潤滑層は四ふり
化エチレン樹脂または界面活性剤で形成することが望ま
しい。The coating layer is preferably formed of an organic resin such as polyurethane, polyethylene, or epoxy, and the lubricating layer is preferably formed of a tetrafluoroethylene resin or a surfactant.

さらに、上記有機樹脂の被覆層はその層厚を０゜３〜２
．０μｍにし、四ふっ化エチレン樹脂または界面活性剤
の潤滑層はその層厚を０．０５〜１．０μｍにすること
が望ましい。Furthermore, the coating layer of the organic resin has a layer thickness of 0°3 to 2.
．． It is desirable that the thickness of the lubricating layer of tetrafluoroethylene resin or surfactant be 0.05 to 1.0 μm.

［実施例］ 第１図ないし第２図を参照して本発明の一実施例を説明
する。たたし、この実施例は勿論この発明を具体化した
例を単に示すためのものであって、この発明の技術的範
囲を制限することを意図するものではない。[Embodiment] An embodiment of the present invention will be described with reference to FIGS. 1 and 2. However, this example is, of course, merely to show an example embodying the invention, and is not intended to limit the technical scope of the invention.

第１図は、符号ｌで示される半導体等の素子用ワイヤを
示す図である。この図を用いて、ワイヤ１について説明
すると、２は潤滑層、３は絶縁および防食性を有する被
覆層、４は銅極細線である。FIG. 1 is a diagram showing a wire for an element such as a semiconductor, which is indicated by the symbol l. Using this figure, the wire 1 will be described. 2 is a lubricating layer, 3 is a coating layer having insulation and anti-corrosion properties, and 4 is an ultra-fine copper wire.

上記被覆層３は、ポリウレタン、ポリエチレンまたはエ
ポキシ等の有機樹脂からなり、その層厚は０．３〜２．
０μｍが好ましい。上記潤滑層２は四ふっ化エチレン樹
脂または界面活性剤（具体的には、アニオン界面活性剤
または非イオン活性剤、例えば、ポリオキシエチレンア
ルキルエーテルサルフェートまたはポリオキシエチレン
アルキルエーテル等）からなり、その層厚は０．０５〜
１．０μｍが好ましい。The coating layer 3 is made of an organic resin such as polyurethane, polyethylene or epoxy, and has a thickness of 0.3 to 2.
0 μm is preferred. The lubricating layer 2 is made of a tetrafluoroethylene resin or a surfactant (specifically, an anionic surfactant or a nonionic surfactant, such as polyoxyethylene alkyl ether sulfate or polyoxyethylene alkyl ether). Layer thickness is 0.05~
1.0 μm is preferable.

上記第１図に示されたワイヤｌを半導体素子にワイヤボ
ンディングする状態が第２図に示されている。まずワイ
ヤ１をリードフレーム８上のＳｉチップ９上にボールボ
ンド部１０を形成して接合し、ついでキャピラリー５を
リード電極６の方向に移動しつつワイヤｌを繰り出し、
上記ワイヤｌをキャピラリー５によりリード電極６に押
圧してウェッジボンド部７を形成し、リード電極６に接
合する。FIG. 2 shows a state in which the wire l shown in FIG. 1 is wire-bonded to a semiconductor element. First, the wire 1 is bonded by forming a ball bond part 10 on the Si chip 9 on the lead frame 8, and then the wire 1 is fed out while moving the capillary 5 in the direction of the lead electrode 6.
The wire 1 is pressed against the lead electrode 6 by the capillary 5 to form a wedge bond portion 7 and bonded to the lead electrode 6.

被覆層３の厚みを０．３〜２．０μｍとした理由は、そ
の層厚が０．３μｍ未満では防食作用が十分でなくかつ
絶縁破壊電圧を５０Ｖ以上の一定値以上に確保すること
ができず、一方リード電極６側のウェッジボンド部７を
形成する時は層厚が２゜０μｍを越えろと接合界面での
新生面の露出が少なく、拡散が抑制され充分な接合強度
が得られなくなる。よって、被覆層３の層厚は０．３〜
２０μｍに定めた。The reason why the thickness of the coating layer 3 is set to 0.3 to 2.0 μm is that if the layer thickness is less than 0.3 μm, the anticorrosion effect is insufficient and the dielectric breakdown voltage cannot be maintained at a certain value of 50 V or more. First, when forming the wedge bond portion 7 on the lead electrode 6 side, if the layer thickness exceeds 2.0 μm, the exposure of the new surface at the bonding interface will be small, diffusion will be suppressed, and sufficient bonding strength will not be obtained. Therefore, the layer thickness of the coating layer 3 is 0.3~
The thickness was set at 20 μm.

また、潤滑層２の厚みを０．０５μｍ〜１．０μｍとし
た理由は、その層厚が０，０５μｍ未満では潤滑層とし
ての充分な効果が得られず、一方、１゜０μｍを越える
と上記被覆層３と同様に、ウェッジボンド部７の成形時
に接合界面での新生面の露出が少く、拡散が抑制され充
分な接合強度が得られなくなるために１．０μｍ以下と
した。The reason why the thickness of the lubricating layer 2 is set to 0.05 μm to 1.0 μm is that if the layer thickness is less than 0.05 μm, sufficient effect as a lubricating layer cannot be obtained, whereas if it exceeds 1°0 μm, the above-mentioned Similar to the coating layer 3, the thickness was set to 1.0 μm or less because the exposure of a new surface at the bonding interface during molding of the wedge bond portion 7 is small, diffusion is suppressed, and sufficient bonding strength cannot be obtained.

ボールボンド部ｌＯの成形時には、電気トーチの放電エ
ネルギーにより被覆剤は溶けてしまうために、被覆層３
および潤滑層２の厚さに関係なく良好なボールボンド部
ｌＯが形成できるが、上記被覆層３および潤滑層２が厚
いとウエッジボンド部７の接合に支障をきたすのである
。When forming the ball bond part 1O, the coating material melts due to the discharge energy of the electric torch, so the coating layer 3
Although a good ball bond portion 10 can be formed regardless of the thickness of the lubricant layer 2, if the coating layer 3 and the lubricant layer 2 are thick, the bonding of the wedge bond portion 7 will be hindered.

なお、上記実施例においては、銅極細線４を用いたワイ
ヤｌを示したが、銅合金の極細線を用いたワイヤであっ
てもよい。In addition, in the above embodiment, the wire l was shown using the copper ultrafine wire 4, but the wire may be a wire using an ultrafine copper alloy wire.

〔実験例〕[Experiment example]

つぎに、上記ワイヤ１の効果を調べるために実験を行っ
たので、比較例と対比しながら説明する。Next, an experiment was conducted to investigate the effect of the wire 1, and will be explained in comparison with a comparative example.

まず、第１図に示すように銅極細線４に被覆層３を被覆
し、その上に潤滑層２を形成して本発明のワイヤ例１〜
８を製造すると共に従来例としての比較用ワイヤ例Ｉ〜
７を製造した。First, as shown in FIG. 1, a copper ultrafine wire 4 is coated with a coating layer 3, and a lubricating layer 2 is formed thereon.
Comparison wire example I as a conventional example while manufacturing 8
7 was manufactured.

そして、防食効果については、製造後３ケ月間放置して
、ワイヤの表面酸化量をＡ　ｕｇｅｒ　Ｍ　ｉｃｒ。As for the anti-corrosion effect, the amount of oxidation on the surface of the wire was measured by Auger Micro after leaving it for three months after manufacture.

Ｐ　ｒｏｂｅを使用し、Ａｒボンバードにより酸素強度
がバック　グラウンド　レベルに到達する迄の時間で示
した。尚、被覆層３および潤滑層２を完全に除去した後
、酸素量を測定しており、この酸素強度が銅極細線４の
表面酸化量に一致する。また、ボンディング性について
は、５００本のワイヤを連続でボンディングした場合に
ボンディング装置が、接合不良、キャピラリー詰まり等
の原因でストップした回数を示した。また、絶縁性につ
いては、故意にワイヤ同士を接触させて半導体装置の実
装を行ない、電気的ショートを調査した。これらの結果
を第１表に示した。The time required for the oxygen intensity to reach the background level by Ar bombardment using a Probe was expressed. The amount of oxygen was measured after completely removing the coating layer 3 and the lubricating layer 2, and this oxygen intensity corresponded to the amount of surface oxidation of the ultrafine copper wire 4. Regarding bonding performance, the number of times the bonding device stopped due to poor bonding, capillary clogging, etc. when 500 wires were bonded continuously was shown. Regarding insulation, the semiconductor device was mounted by intentionally bringing wires into contact with each other, and electrical shorts were investigated. These results are shown in Table 1.

この表に示すように、本発明のワイヤ例１〜８では、３
ケ月放置後の表面酸化量、ボンディング性および電気的
シコートの有無について、良好な結果となっている。As shown in this table, in wire examples 1 to 8 of the present invention, 3
Good results were obtained regarding the amount of surface oxidation, bonding properties, and the presence or absence of electrical cycoat after being left for several months.

これに対して、比較ワイヤ例１．３．７に示す被覆層３
の無いものや該被覆層３が０．３μｍ未満のものは、３
ケ月放置後の表面酸化量が際立って大きく、しかも電気
的ショートの発生もみられている。また、比較ワイヤ例
２．５に示す被覆層３の厚さが２．０μｍを越えるもの
や潤滑層２の厚さが１．０μｍを越えるものは、ウェッ
ジボンド部７の接合不良が生じてボンディング性が悪く
なっている。さらに、比較ワイヤ例４．６に示す潤滑層
２が無いものや該潤滑層２の厚さが０．０５μｍ未満の
ものは、該潤滑層２が潤滑剤とじて十分作用せず、キャ
ピラリー詰まり等によってボンディング性が悪くなって
いる。ただし、比較ワイヤ例７のものは、潤滑層２が無
いが、被覆層３も無いのでキャピラリーに対して大きな
摩擦力が作用せず、このためキャピラリー詰まり等が無
くボンディング性が良くなっている。In contrast, the coating layer 3 shown in Comparative Wire Example 1.3.7
If the coating layer 3 is less than 0.3 μm,
The amount of surface oxidation after being left for several months was noticeably large, and electrical shorts were also observed. In addition, if the thickness of the coating layer 3 exceeds 2.0 μm or the thickness of the lubricant layer 2 exceeds 1.0 μm as shown in Comparative Wire Example 2.5, bonding failure may occur in the wedge bond portion 7, resulting in poor bonding. It's getting worse. Furthermore, in the comparative wire example 4.6, in which there is no lubricating layer 2 or the thickness of the lubricating layer 2 is less than 0.05 μm, the lubricating layer 2 does not act sufficiently as a lubricant, resulting in capillary clogging, etc. The bonding properties are deteriorated due to this. However, although Comparative Wire Example 7 does not have the lubricating layer 2, it also does not have the coating layer 3, so a large frictional force does not act on the capillary, and therefore there is no capillary clogging and the bonding property is improved.

以　　下　　余　　白 〔発明の効果〕 以上述べた説明から明らかなように、この発明によれば
、銅また銅合金線の表面に絶縁および防食性を有する被
覆層を形成し、この被覆層の上に潤滑層を形成したから
、ボンディングワイヤ同士の接触によって電気的シ３．
−トが発生することなく、また酸化を防止して長期間保
存することができるとともに、該ボンディングワイヤの
表面の摩擦係数を低下して、該ボンディングワイヤ自信
をキャピラリーから安定して繰り出すことができる。Margin below [Effects of the Invention] As is clear from the above explanation, according to the present invention, a coating layer having insulation and anticorrosion properties is formed on the surface of a copper or copper alloy wire, and a coating layer is formed on the surface of the copper or copper alloy wire. Since a lubricating layer is formed on the bonding wires, electrical contact between the bonding wires can be achieved.3.
- It is possible to store the bonding wire for a long period of time without causing any damage and to prevent oxidation, and by lowering the coefficient of friction on the surface of the bonding wire, the bonding wire itself can be stably fed out from the capillary. .

このため、ボンディング作業を連続して安定的に行うこ
とができ、該ボンディングワイヤ自信が切断されること
も防止することができる。したがって、ボンディング装
置が止まったり、電気的ショートや接合不良等を防止す
ることができるから、実装歩留まりを著しく向上させる
ことができ、特に高密度半導体素子のワイヤボンディン
グにおいて効果が大きい。Therefore, the bonding work can be performed continuously and stably, and the bonding wire itself can be prevented from being cut. Therefore, it is possible to prevent the bonding device from stopping, electrical short-circuits, poor bonding, etc., so that the mounting yield can be significantly improved, and this is particularly effective in wire bonding of high-density semiconductor devices.

また、被覆層をポリウレタン、ポリエチレンまたはエポ
キシ等の有機樹脂で形成し、上記潤滑層を四ふっ化エチ
レン樹脂または界面活性剤で形成した場合には銅または
銅合金線の表面の防食性、絶縁性を十分得るため、ある
いはボンディングワイヤ自体の表面とキャピラリー等と
の摩擦力を十分低下させるための被膜層あるいは潤滑層
の厚さを極めて薄くすることができる。In addition, when the coating layer is formed of an organic resin such as polyurethane, polyethylene, or epoxy, and the above-mentioned lubricating layer is formed of a tetrafluoroethylene resin or a surfactant, the corrosion resistance and insulation properties of the surface of the copper or copper alloy wire can be improved. The thickness of the coating layer or the lubricating layer can be made extremely thin in order to obtain a sufficient amount of bonding wire or to sufficiently reduce the frictional force between the surface of the bonding wire itself and the capillary or the like.

さらに、上記有機樹脂の被覆層の厚さを０．３〜２．０
μｍに形成し、上記四ふっ化エチレン樹脂あるいは界面
活性剤の潤滑層の厚さを０．０５〜１．０μｍに形成し
た場合には、銅または銅合金線の表面の防食性および絶
縁性を十分なものにすることができるとともに、ボンデ
ィングワイヤ自体の表面とキャピラリー等との摩擦力を
十分低下させることができ、しかも該ボンディングワイ
ヤ自体をリードフレームに十分な接合強度で接合するこ
とができる。Furthermore, the thickness of the coating layer of the organic resin is set to 0.3 to 2.0.
If the thickness of the lubricating layer of the tetrafluoroethylene resin or surfactant is 0.05 to 1.0 μm, the anticorrosion and insulation properties of the surface of the copper or copper alloy wire can be improved. In addition, the frictional force between the surface of the bonding wire itself and the capillary etc. can be sufficiently reduced, and the bonding wire itself can be bonded to the lead frame with sufficient bonding strength.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の半導体等の素子用ボンディングワイ
ヤの断面概略斜視図、第２図はワイヤボンディングの状
態を示す概略図である。 ■・・・・・・ワイヤ（ボンディングワイヤ）、２・・
・・・・潤滑層、 ３・・・・・・被覆層、 ４・・・・・・銅極細線。FIG. 1 is a schematic cross-sectional perspective view of a bonding wire for devices such as semiconductors according to the present invention, and FIG. 2 is a schematic diagram showing the state of wire bonding. ■・・・Wire (bonding wire), 2...
... Lubricating layer, 3 ... Coating layer, 4 ... Ultrafine copper wire.

Claims (3)

【特許請求の範囲】[Claims] （１）銅線または銅合金線の表面に絶縁性および防食性
を有する被覆層を形成し、この被覆層の上に潤滑層を形
成してなることを特徴とする半導体等の素子用ボンディ
ングワイヤ。(1) A bonding wire for elements such as semiconductors, characterized in that a coating layer having insulation and anticorrosion properties is formed on the surface of a copper wire or copper alloy wire, and a lubricating layer is formed on the coating layer. . （２）被覆層はポリウレタン、ポリエチレンまたはエポ
キシ等の有機樹脂からなり、潤滑層は四ふ化エチレン樹
脂または界面活性剤からなることを特徴とする請求項１
記載の半導体等の素子用ボンディングワイヤ。(2) Claim 1, wherein the coating layer is made of an organic resin such as polyurethane, polyethylene or epoxy, and the lubricating layer is made of tetrafluoroethylene resin or a surfactant.
Bonding wire for elements such as semiconductors as described. （３）被覆層は層厚が０．３〜２．０μｍであり、潤滑
層は層厚が０．０５〜１．０μｍであることを特徴とす
る請求項２記載の半導体等の素子用ボンディングワイヤ
。(3) The bonding for elements such as semiconductors according to claim 2, wherein the coating layer has a layer thickness of 0.3 to 2.0 μm, and the lubricating layer has a layer thickness of 0.05 to 1.0 μm. wire.
JP63079039A 1988-03-31 1988-03-31 Bonding wire for element of semiconductor and the like Pending JPH01251727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63079039A JPH01251727A (en) 1988-03-31 1988-03-31 Bonding wire for element of semiconductor and the like

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63079039A JPH01251727A (en) 1988-03-31 1988-03-31 Bonding wire for element of semiconductor and the like

Publications (1)

Publication Number Publication Date
JPH01251727A true JPH01251727A (en) 1989-10-06

Family

ID=13678776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63079039A Pending JPH01251727A (en) 1988-03-31 1988-03-31 Bonding wire for element of semiconductor and the like

Country Status (1)

Country Link
JP (1) JPH01251727A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03165044A (en) * 1989-11-22 1991-07-17 Tanaka Denshi Kogyo Kk Covered wire
JPH03270142A (en) * 1990-03-20 1991-12-02 Nippon Steel Corp Bonding fine wire for semiconductor
GB2300752A (en) * 1995-05-12 1996-11-13 Tanaka Electronics Ind Bonding wire for semiconductor devices
KR100327948B1 (en) * 1997-10-16 2002-06-26 가네꼬 히사시 How to assemble coated and fine metal wires and semiconductor devices using them
CN102280388A (en) * 2011-05-18 2011-12-14 王一平 Preparation method of mono-crystal copper bonding wire
US9882107B2 (en) 2016-01-12 2018-01-30 Citizen Electronics Co., Ltd. LED package with covered bonding wire

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03165044A (en) * 1989-11-22 1991-07-17 Tanaka Denshi Kogyo Kk Covered wire
JPH03270142A (en) * 1990-03-20 1991-12-02 Nippon Steel Corp Bonding fine wire for semiconductor
GB2300752A (en) * 1995-05-12 1996-11-13 Tanaka Electronics Ind Bonding wire for semiconductor devices
GB2300752B (en) * 1995-05-12 1999-12-15 Tanaka Electronics Ind Method of manufacturing bonding wire for semiconductor device
KR100327948B1 (en) * 1997-10-16 2002-06-26 가네꼬 히사시 How to assemble coated and fine metal wires and semiconductor devices using them
CN102280388A (en) * 2011-05-18 2011-12-14 王一平 Preparation method of mono-crystal copper bonding wire
US9882107B2 (en) 2016-01-12 2018-01-30 Citizen Electronics Co., Ltd. LED package with covered bonding wire

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