JP2721259B2 - Wire bonding method and copper-based lead frame used therefor - Google Patents
Wire bonding method and copper-based lead frame used thereforInfo
- Publication number
- JP2721259B2 JP2721259B2 JP2039817A JP3981790A JP2721259B2 JP 2721259 B2 JP2721259 B2 JP 2721259B2 JP 2039817 A JP2039817 A JP 2039817A JP 3981790 A JP3981790 A JP 3981790A JP 2721259 B2 JP2721259 B2 JP 2721259B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- copper
- wire bonding
- oxide film
- based lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85065—Composition of the atmosphere being reducing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85447—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、貴金属メッキを施さない銅系リードフレー
ムにAu,Al,Cu線等をワイヤボンディングする方法及びそ
れに使用する銅系リードフレームに関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of wire-bonding Au, Al, Cu wires and the like to a copper-based lead frame not subjected to noble metal plating and a copper-based lead frame used for the method. It is.
［従来の技術］ 従来、IC等の半導体装置の製造においては、リードフ
レーム材料をスタンピング又はエッチングして所定のリ
ードフレーム形状とした後、そのインナーリードのワイ
ヤボンディング部またはそれとチップを搭載するダイボ
ンド部とにAuやAg等の貴金属メッキを施してリードフレ
ームとなし、次いで半導体組立工程にてチップをダイホ
ンド部上に接合し、チップのパッド部とインナーリード
間に電気的接続のためAu、Al或いはCuワイヤをボンディ
ングしている。2. Description of the Related Art Conventionally, in the manufacture of semiconductor devices such as ICs, after a lead frame material is stamped or etched into a predetermined lead frame shape, a wire bonding portion of the inner lead or a die bonding portion for mounting the chip and the chip. Then, a noble metal plating such as Au or Ag is applied to form a lead frame.Then, the chip is bonded on the diephone part in the semiconductor assembling process, and Au, Al, or Al is electrically connected between the pad part of the chip and the inner lead. Cu wire is bonded.
ワイヤボンディングの後は、リードフレームのアウタ
ーリードを残して樹脂封止した後、アウターリードにSn
又は低Pb−Snのメッキを施し、不要なフレーム部を除去
し、アウターリードを所定の形状に曲げ加工して製品と
する。After wire bonding, the outer lead of the lead frame is sealed with resin while leaving the outer lead.
Alternatively, a low Pb-Sn plating is applied to remove unnecessary frame portions, and outer leads are bent into a predetermined shape to obtain a product.
近年では、省貴金属の観点から、上述したリードフレ
ームの製造時でのAu又はAgメッキを省略して、リードフ
レームのインナーリード部上に直接ワイヤをボンディン
グする方法が一部で利用されている。In recent years, from the viewpoint of saving precious metals, a method of partially bonding a wire directly to an inner lead portion of a lead frame by omitting Au or Ag plating in manufacturing the lead frame described above has been used.
［発明が解決しようとする課題］ ワイヤボンディングは一種の圧接であり、リードフレ
ーム及びワイヤ両者が適当に変形して新生面を露出する
ことにより圧接される。純銅や希薄銅合金で作られたリ
ードフレームは、例えばディスクリートトランジスタ等
に用いられているが、これら従来の銅系リードフレーム
は一般に肉厚であり、軟質に調質して利用できるけれど
も、多ピンで薄肉化したリードフレームを利用する場合
には合金元素添加によるリードフレーム材料の高強度化
が必須となっており、ワイヤボンダビリティの低下の一
因となっていた。[Problems to be Solved by the Invention] Wire bonding is a kind of pressure welding, and both lead frames and wires are appropriately deformed and pressed by exposing a new surface. Lead frames made of pure copper or dilute copper alloy are used, for example, for discrete transistors and the like, but these conventional copper-based lead frames are generally thick and can be used after being softly tempered. In the case of using a lead frame thinned by the above method, it is necessary to increase the strength of the lead frame material by adding an alloy element, which is one of the causes of a decrease in wire bondability.
本発明は、合金元素を添加した銅系リードフレームを
用いて貴金属メッキを施すことなくワイヤボンディング
を行なう場合に、ボンダリティの低下を抑制出来る改良
されたワイヤボンディング方法及びそれに使用する銅系
リードフレームを提供することを目的とする。The present invention provides an improved wire bonding method capable of suppressing a decrease in bondability when performing wire bonding without performing noble metal plating using a copper-based lead frame to which an alloy element has been added, and a copper-based lead frame used therein. The purpose is to provide.
［課題を解決するための手段］ 本発明に係るワイヤボンディング方法は、貴金属メッ
キを施さない銅系リードフレームにワイヤボンディング
する方法であって、 ワイヤボンディング前に該銅系リードフレームの少な
くともボンディング位置の表面に酸化膜を形成する工程
と、 該酸化膜を形成したリードフレームを還元ガス中に保
持して、該酸化膜を還元する工程とを含み、 前記還元工程の後に非酸化性雰囲気中にてワイヤボン
ディングを行なうものであり、前記酸化膜は好ましくは
200〜3000Åの範囲内の膜厚とする。[Means for Solving the Problems] A wire bonding method according to the present invention is a method for performing wire bonding to a copper-based lead frame that is not subjected to noble metal plating, wherein at least a bonding position of the copper-based lead frame is determined before wire bonding. Forming an oxide film on the surface, and holding the lead frame on which the oxide film is formed in a reducing gas to reduce the oxide film. Performing wire bonding, wherein the oxide film is preferably
The film thickness is in the range of 200 to 3000 mm.
また、この方法に使用するための本発明に係る銅系リ
ードフレームでは、各々0.5％以下のZr,Cr,Ti,Fe,Ni,C
o、または0.1％以下のＰの１種又は２種以上を含有し、
残部がCuからなるものであり、好ましくは更に0.3％以
下のSn,Znの１種又は２種を含有してなるものである。Further, in the copper-based lead frame according to the present invention for use in this method, Zr, Cr, Ti, Fe, Ni, C
o, or 0.1% or less of one or more of P,
The balance is made of Cu, and preferably further contains one or more of Sn and Zn of 0.3% or less.
［作 用］ 本発明は、貴金属メッキを施さない銅系リードフレー
ムにワイヤボンディングするに際して、ワイヤボンディ
ング前の該銅系リードフレーム表面に例えば加熱により
ある膜厚の酸化膜（CuO）を積極的に形成し、該酸化膜
を形成したリードフレームを還元ガス中に保持して該酸
化膜を還元した後、非酸化性雰囲気中にてワイヤボンデ
ィングするものであるため、リードフレームの組成が純
銅でない合金組成であっても、前記酸化膜を還元した後
の銅系リードフレーム表面が純銅に近い軟らかい組成と
なり、ワイヤボンディングの熱圧着で、リードフレーム
及びワイヤ両者が良好に変形して新生面同士で圧接され
ることになる。[Operation] In the present invention, when wire bonding to a copper-based lead frame not subjected to noble metal plating, an oxide film (CuO) of a certain thickness is positively applied to the surface of the copper-based lead frame before wire bonding, for example, by heating. After forming and holding the lead frame on which the oxide film is formed in a reducing gas to reduce the oxide film and then performing wire bonding in a non-oxidizing atmosphere, the composition of the lead frame is not pure copper. Even with the composition, the surface of the copper-based lead frame after reducing the oxide film becomes a soft composition close to pure copper, and the lead frame and the wire are both well deformed and pressed against the new surfaces by thermocompression bonding of wire bonding. Will be.
更に、本発明において好ましくは、酸化膜の膜厚を20
0〜3000Åの範囲内とする。即ち、酸化膜の膜厚が200Å
未満ではボンディングが不充分となることがあり、ま
た、3000Åをこえると酸化膜自身が剥離することがある
ので望ましくない。また、より効果的には合金にもよる
が300〜1500Åであることが確認されている。Further, in the present invention, preferably, the thickness of the oxide film is 20
The range is 0 to 3000 mm. That is, the thickness of the oxide film is 200
If it is less than 30, bonding may be insufficient, and if it exceeds 3000 °, the oxide film itself may peel off, which is not desirable. In addition, it has been confirmed that the angle is more preferably 300 to 1500 ° depending on the alloy.
本発明の方法に用いるに適した銅系リードフレーム
は、各々0.5％以下のZr,Cr,Ti,Fe,Ni,Co、または0.1％
以下のＰの１種又は２種以上空なる高融点元素を含有
し、残部がCuからなる合金である。Zr,Cr,Ti,Fe,Ni,Co
の含有率が0.5％、Ｐが0.1％より多くなると、酸化膜を
還元した後の表面に存在するCu以外の元素の比率が多く
なり、ワイヤボンディング性を劣化せしめることがある
からである。Copper-based leadframes suitable for use in the method of the present invention each contain 0.5% or less of Zr, Cr, Ti, Fe, Ni, Co, or 0.1%.
An alloy containing one or more of the following high melting point elements of P, with the balance being Cu. Zr, Cr, Ti, Fe, Ni, Co
If the content of P is more than 0.5% and P is more than 0.1%, the ratio of elements other than Cu existing on the surface after reducing the oxide film increases, which may degrade the wire bonding property.
また、本発明の銅系リードフレームでは、前記合金組
成に、更に0.3％以下のSn,Znの１種又は２種を含有させ
ることもでき、この場合、前記組成範囲内では、Zr,Cr,
Ti,Fe,Ni,Co,P等の元素は還元後に表面に殆ど露出残留
しないので、ボンダビリティを低下させないが、低融点
金属であるSnやZnは、その含有率が多いと前記還元処理
の後にも合金表層にその酸化物を残留して、ボンダビリ
ティを低下せしめる恐れがあるので、好ましい含有率を
0.3％以下に規定するものである。Further, in the copper-based lead frame of the present invention, the alloy composition may further contain 0.3% or less of one or two of Sn and Zn. In this case, within the composition range, Zr, Cr,
Since elements such as Ti, Fe, Ni, Co, and P hardly remain exposed and remain on the surface after reduction, they do not lower bondability.However, if the content of Sn or Zn, which is a low-melting metal, is large, the content of the element is large. Since the oxide may remain on the surface layer of the alloy later and reduce the bondability, a preferable content is set.
It is specified at 0.3% or less.
［実施例］ 以下、本発明の実施例について更に詳しく説明する。EXAMPLES Hereinafter, examples of the present invention will be described in more detail.
第１表に示した本発明の実施例に係る合金組成のリー
ドフレームと第２表に示した比較例に係る合金組成のリ
ードフレームとを準備し、各々について180℃大気雰囲
気中で所定時間加熱して、各表中に示した膜厚の酸化膜
を形成せしめた。A lead frame having an alloy composition according to an example of the present invention shown in Table 1 and a lead frame having an alloy composition according to a comparative example shown in Table 2 were prepared, and each was heated at 180 ° C. in an air atmosphere for a predetermined time. As a result, an oxide film having the thickness shown in each table was formed.
その後300℃の10％H2-N2雰囲気中で酸化膜を完全に還
元した後、市販のワイヤボンダーを行い、ボンディング
性を評価した。Thereafter, the oxide film was completely reduced in a 10% H 2 -N 2 atmosphere at 300 ° C., and then a commercially available wire bonder was used to evaluate the bonding property.
ワイヤボンダーは、新川製FA−Cu B−10を用い、10％
H2−N2雰囲気下で直径25μｍのAu線を用いて2mmのルー
プ長にて荷重50g,超音波出力50dTU,圧着時間30msec,圧
接温度270℃の条件で行った。The wire bonder uses Shinkawa FA-Cu B-10, 10%
The test was performed in a H 2 -N 2 atmosphere using a 25 μm diameter Au wire with a loop length of 2 mm, a load of 50 g, an ultrasonic output of 50 dTU, a crimping time of 30 msec, and a welding temperature of 270 ° C.
ボンディング性の評価は、ワイヤループ中央を引張
り、ワイヤ接合部が剥れずにワイヤが破断した割合で示
した。尚、各々のサンプル数は1000である。The bonding property was evaluated by pulling the center of the wire loop and breaking the wire without peeling off the wire joint. The number of each sample is 1,000.
第１表より、本発明に従って適当な酸化膜を形成した
後に還元することにより、ワイヤボンディング性が優れ
ることが判かる。また、第２表に示す通り、リードフレ
ームの合金組成が、各々0.5％以上のZr,Cr,Ti,Fe,Ni,C
o、または0.1％以上のＰの１種または２種以上を含有す
るもの、または0.3％以上のSn,Znの１種又は２種を含有
するものでは、200〜3000Åの酸化膜厚範囲でもボンデ
ィング性は劣り、また合金組成が本発明の範囲内であっ
ても酸化膜厚が200Å未満であるとボンディング性が若
干劣り、また3000Åを越えると酸化膜の剥離が起きてし
まうことが判る。Table 1 shows that the reduction after forming an appropriate oxide film according to the present invention has excellent wire bonding properties. Also, as shown in Table 2, the alloy composition of the lead frame was 0.5% or more for each of Zr, Cr, Ti, Fe, Ni, and C.
o, or those containing one or more kinds of P of 0.1% or more, or those containing one or two kinds of Sn or Zn of 0.3% or more, bonding even in the oxide film thickness range of 200 to 3000 ° It can be seen that even if the alloy composition is within the range of the present invention, if the oxide film thickness is less than 200 °, the bonding property is slightly inferior, and if it exceeds 3000 °, the oxide film peels off.
［発明の効果］ 以上説明した通り、本発明では、貴金属メッキを施さ
ない銅系リードフレームにワイヤボンディングするに際
して、ワイヤボンディング前の該銅系リードフレーム表
面に酸化膜を形成した後、該酸化膜を形成したリードフ
レームを還元ガス中に保持して該酸化膜を還元した後、
非酸化性雰囲気中にてワイヤボンディングを行うもの
で、酸化膜を還元した銅系リードフレーム表面が純銅に
近い軟らかい組成となり、ワイヤボンディングの熱圧着
で、リードフレーム及びワイヤ両者が良好に変形して新
生面同士で圧接される。このように、薄肉化のための合
金組成を有する銅系リードフレームの場合であっても貴
金属を使用せずにワイヤボンディングを良好な状態で行
なうことが可能となり、その工業的価値は極めて大き
い。 [Effects of the Invention] As described above, according to the present invention, when wire bonding to a copper-based lead frame not subjected to noble metal plating, an oxide film is formed on the surface of the copper-based lead frame before wire bonding, and then the oxide film is formed. After reducing the oxide film by holding the lead frame having formed therein in a reducing gas,
Wire bonding is performed in a non-oxidizing atmosphere, and the surface of the copper-based lead frame with reduced oxide film has a soft composition close to pure copper. The new faces are pressed against each other. Thus, even in the case of a copper-based lead frame having an alloy composition for thinning, wire bonding can be performed in a good state without using a noble metal, and its industrial value is extremely large.
Claims (4)
ムにワイヤボンディングする方法であって、 ワイヤボンディング前に該銅系リードフレームの少なく
ともボンディング位置の表面に酸化膜を形成する工程
と、 該酸化膜を形成したリードフレームを還元ガス中に保持
して、該酸化膜を還元する工程とを含み、 前記還元工程の後に非酸化性雰囲気中にてワイヤボンデ
ィングを行なうことを特徴とするワイヤボンディング方
法。1. A method for performing wire bonding to a copper-based lead frame that is not subjected to noble metal plating, comprising: forming an oxide film on at least a surface of a bonding position of the copper-based lead frame before wire bonding; Holding the lead frame in which the oxide film has been formed in a reducing gas to reduce the oxide film, and performing wire bonding in a non-oxidizing atmosphere after the reducing step.
とを特徴とする請求項１に記載のワイヤボンディング方
法。2. The wire bonding method according to claim 1, wherein said oxide film has a thickness of 200 to 3000 °.
は0.1％以下のＰの１種又は２種以上を含有し、残部がC
uからなることを特徴とする前記請求項１に記載のワイ
ヤボンディング方法に使用する銅系リードフレーム。(3) each containing 0.5% or less of one or more of Zr, Cr, Ti, Fe, Ni, Co, or 0.1% or less of P, with the balance being C
2. A copper-based lead frame used in the wire bonding method according to claim 1, wherein the copper-based lead frame is made of u.
いて、更に0.3％以下のSn,Znの１種又は２種を含有して
なることを特徴とする銅系リードフレーム。4. A copper-based lead frame according to claim 3, further comprising 0.3% or less of one or two of Sn and Zn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2039817A JP2721259B2 (en) | 1990-02-22 | 1990-02-22 | Wire bonding method and copper-based lead frame used therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2039817A JP2721259B2 (en) | 1990-02-22 | 1990-02-22 | Wire bonding method and copper-based lead frame used therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03244138A JPH03244138A (en) | 1991-10-30 |
| JP2721259B2 true JP2721259B2 (en) | 1998-03-04 |
Family
ID=12563523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2039817A Expired - Lifetime JP2721259B2 (en) | 1990-02-22 | 1990-02-22 | Wire bonding method and copper-based lead frame used therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2721259B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008017441A (en) | 2006-06-06 | 2008-01-24 | Ricoh Co Ltd | Data processing apparatus, data processing method, and program |
-
1990
- 1990-02-22 JP JP2039817A patent/JP2721259B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03244138A (en) | 1991-10-30 |
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