JP2010199528A - Bonding wire - Google Patents

Bonding wire Download PDF

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Publication number
JP2010199528A
JP2010199528A JP2009094065A JP2009094065A JP2010199528A JP 2010199528 A JP2010199528 A JP 2010199528A JP 2009094065 A JP2009094065 A JP 2009094065A JP 2009094065 A JP2009094065 A JP 2009094065A JP 2010199528 A JP2010199528 A JP 2010199528A
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Japan
Prior art keywords
coating layer
bonding
wire
copper
bonding wire
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Pending
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JP2009094065A
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Japanese (ja)
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JP2010199528A5 (en
Inventor
Takeshi Hasegawa
剛 長谷川
Original Assignee
Tatsuta System Electronics Kk
タツタ システム・エレクトロニクス株式会社
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Priority to JP2009015265 priority Critical
Application filed by Tatsuta System Electronics Kk, タツタ システム・エレクトロニクス株式会社 filed Critical Tatsuta System Electronics Kk
Priority to JP2009094065A priority patent/JP2010199528A/en
Publication of JP2010199528A publication Critical patent/JP2010199528A/en
Publication of JP2010199528A5 publication Critical patent/JP2010199528A5/ja
Application status is Pending legal-status Critical

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Abstract

<P>PROBLEM TO BE SOLVED: To improve bonding strength in conjunction with an increase of operation speed even when a work stage temperature is as low as approximately 150°C. <P>SOLUTION: The bonding wire P connects an electrode (a) of an integrated circuit element to a conductor wiring c of a circuit wiring board by a ball bonding method. A coating layer 2 formed of one or more selected from gold, platinum. palladium and silver is formed on an entire outer circumference of a core material 1 formed of 99.99 mass% or more copper. The coating wire is subjected to diffusion heat treatment to improve adhesion of the core material 1 and coating layer 2. Then, the coating wire is drawn to have a wire diameter L of 12-50.8 μm. Furthermore, thermal refining treatment is carried out to have tensile elongation 8% or more to obtain the bonding wire having the coating layer 2 with a thickness 0.04-0.09 μm. The bonding wire of this structure is connected to the electrode and conductor wiring with sufficient bonding strength, and even in high-speed operation at a low temperature, the operation does not stop. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

この発明は、IC、LSI、トランジスタ等の集積回路素子上の電極と、リードフレーム、セラミック基板、プリント基板等の回路配線基板の導体配線とをボールボンディング法によって接続するためのボンディングワイヤ及びその製造方法に関するものである。 The present invention, IC, LSI, and the electrodes on the integrated circuit elements such as transistors, a lead frame, bonding wires and their preparation for connecting a ceramic substrate, ball bonding method and a circuit wiring board conductor wiring, such as a printed board the method relates.

この種のボールボンディング法による接続方法は、図1(a)〜(h)に示す態様が一般的であり、同図(a)に示す、ワイヤPがキャピラリー10aに挿通されてその先端にボール(FAB:Free Air Ball)bが形成された状態から、クランプ10bが開いて、キャピラリー10aが集積回路素子上の電極aに向かって降下する。 Connection method according to this type of ball bonding method embodiment shown in FIG. 1 (a) ~ (h) is common, the ball at the tip shown in FIG. 6 (a), the wire P is inserted into the capillary 10a from: (FAB Free Air Ball) b is formed state, the clamp 10b is opened, capillary 10a descends toward the electrode a on the integrated circuit device. このとき、ボール(FAB)bはキャピラリー10a内に捕捉され、キャピラリー10aの中心にボンディングされる。 At this time, the ball (FAB) b is trapped in the capillary 10a, it is bonded to the center of the capillary 10a.

ターゲットである電極aにボールbが接触すると(キャピラリー10aが電極aに至ると)キャピラリー10aがボールbをグリップし、ボールbに熱・加重・超音波を与え、それによってボールbと電極aが固相接合され、1stボンドが形成されて電極aと接着する(図1(b))。 When the ball b on the electrode a is the target is in contact (the capillary 10a reaches the electrode a) the capillary 10a is gripping the ball b, applying heat-Weighted-ultrasound to the ball b, it by a ball b and the electrode a is solid phase bonding, 1st bond is formed to adhere to the electrode a (Figure 1 (b)).
1stボンドが形成されれば、キャピラリー10aは、一定高さまで上昇した後(同図(c))、導体配線cの真上まで移動する(同図(d)〜(e))。 If it is 1st bond formation, capillary 10a may rise to a predetermined height (Fig. (C)), moves to just above the conductor wiring c (FIG. (D) ~ (e)). このとき、安定したループを形成するため、キャピラリー10aに特殊な動きをさせてワイヤPに「くせ」を付ける動作をする場合がある(同図(d)の鎖線から実線参照)。 At this time, in order to form a stable loop, (see the solid line from the chain line in FIG. (D)) which may be an operation by a special motion to the capillary 10a attach "habit" on the wire P.

導体配線cの真上に至ったキャピラリー10aは、導体配線cに向かって降下し、ワイヤPを導体配線(2ndターゲット)cに押付ける(同図(e)〜(f))。 Capillary 10a which has reached just above the conductor wiring c descends toward the conductive wire c, the wire P conductor wiring pressed against the (2nd target) c (FIG. (E) ~ (f)). これと同時に、その押付け部位に熱・加重・超音波を与え、それによってワイヤPを変形させ、ワイヤPを導体配線c上に接合させるためのステッチボンドと、次のステップでテイルを確保するテイルボンドを形成する(図1(f))。 At the same time, giving a heat-Weighted-ultrasound to the pressing portion, tail thereby to deform the wires P, to ensure the stitch bond for bonding the wire P on the conductor wire c, and tail in the next step to form a bond (Fig. 1 (f)).

その両ボンドを形成した後、キャピラリー10aはワイヤPを残したまま上昇し、キャピラリー10aの先端に一定の長さのテイルを確保した後、クランプ10bを閉じて(ワイヤPをつかんで)、テイルボンドの部分からワイヤPを引きちぎる(図1(g))。 After forming the two bonding, capillary 10a is increased leaving the wire P, after securing a certain length of tail on the tip of the capillary 10a, (grab wire P) by closing the clamp 10b, tail torn off wire P from the portion of the bond (Fig. 1 (g)). このとき、テイルボンドがワイヤPを仮止めしているため、テイルボンドをなすワイヤPはキャピラリー10aと一緒に上昇しない。 At this time, since the tail bond it is temporarily fixed wire P, wire P forming the tail bond does not increase with the capillary 10a.

キャピラリー10aは、所要の高さまで上昇すると停止し、そのキャピラリー10aの先端に確保されたワイヤPの先端部分に、放電棒gでもって高電圧を掛けて火花を飛ばし(放電し)、その熱でワイヤPを溶かし、この溶けたワイヤ素材は表面張力によって球状に近いボールbになって固まる(図1(h))。 Capillary 10a stops to rise to the required height, the tip portion of the wire P secured to the distal end of the capillary 10a, with the discharge rod g by applying a high voltage skip spark (discharged), in the heat dissolved wire P, the molten wire material congeals turned ball b close to the spherical shape by surface tension (FIG. 1 (h)).

以上の作用で一サイクルが終了し、以後、同様な作用によって、電極aと導体配線cのボールボンディング法による接続がされる。 A cycle is completed by the above action, thereafter, by the same action, which is connected by ball bonding method of the electrodes a and the conductor wiring c.

このボールボンディング法による接続において、ボンディングワイヤPには、金線が主に使用されるが、金は高価であるため、近年、銅純度99.99質量%以上の安価な銅線を使用することが行われている。 In connection by the ball bonding method, the bonding wires P, but gold is mainly used, because gold is expensive, in recent years, the use of copper purity of 99.99 mass% or more inexpensive copper It is being carried out. そのとき、銅は裸のままでは、表面の酸化が起こり易いことから、図2に示すように、銅線からなる芯材1に耐酸化金属2を被覆したものが使用されている。 At that time, the copper in the naked, since it is easy to occur oxidation of the surface, as shown in FIG. 2, those coated with oxidation metal 2 on the core material 1 made of copper wire is used.
その被覆金属(被覆層)2としては、金(Au)、白金(Pt)、パラジウム(Pd)、銀(Ag)、ニッケル(Ni)等が採用されている(特許文献1〜3)。 As the coating metal (coating layer) 2, a gold (Au), platinum (Pt), palladium (Pd), silver (Ag), nickel (Ni) or the like is used (Patent Documents 1 to 3).

特開2003−133361号公報 JP 2003-133361 JP 特開2004−64033号公報 JP 2004-64033 JP 特開2007−12776号公報 JP 2007-12776 JP

この金属被覆の銅線からなるボンディングワイヤPにおいて、近年の電子部品の小型化等による集積回路素子間の極小化に伴い、上記ボールbもより小さくする必要から、ボンディングワイヤPにも小径のものが望まれ、そのためには、その径Lを50μm以下とするのが好ましいとされている(特許文献1段落0009第12〜14行)。 In a bonding wire P made of copper wire of the metal coating, with the minimization of the inter-integrated circuit device according to miniaturization of the recent electronic parts, the need to be smaller the ball b, those of smaller diameter bonding wires P is desired. for this purpose, preferably a has been that (Patent Document 1 paragraph 0009 12 to 14 lines) it is to the diameter L and 50μm or less.
また、集積回路素子の電極aへの接続において、ボールbが下向き槍状(逆円錐状)になっていると、上記ボールbの電極aへの押付け時、そのボールbの尖鋭端によって電極aを損傷させる恐れがあるため、ボールbはできるだけ、真球であることが好ましい。 Further, in connection to the electrode a of the integrated circuit device, when the ball b is in a downward lance (inverted conical shape), when pressed to the electrode a of the ball b, the electrode a by pointed ends of the ball b because it may damage the ball b is possible, preferably a true sphere. そのボールbの真球度を高めるために、上記被覆層2の厚みtを芯線径の0.001以下としたり(特許文献1請求項1)、同じく被覆層2の厚みtを0.001〜0.2μmとしたり(特許文献3請求項1)、芯材1の銅よりも高融点の耐酸化金属で被覆層2を形成したりしている(特許文献2段落0014)。 To increase the sphericity of the ball b, the covering layer or as a 0.001 below the core diameter 2 of the thickness t (Patent Document 1 claims 1), also 0.001 thickness t of the coating layer 2 or a 0.2 [mu] m (Patent Document 3 claim 1), than copper of the core material 1 is or to form a coating layer 2 of a refractory oxidation metal (Patent Document 2 paragraph 0014).
さらに、有機基板をベースにしたBGA(Ball Grid Array)などでは加熱温度(ステージ温度)を高くすると、反りが発生してボンディング性が著しく悪化する。 Furthermore, in such BGA (Ball Grid Array) in which the organic substrate to the base A higher heating temperature (stage temperature), bondability warpage occurs it is significantly deteriorated. このため、上記ワイヤPと電極a又は導体配線cとの接合時の加熱温度(ステージ温度)を低く、例えば、150℃程度にしても、十分な接合強度を担保するための種々の工夫、例えば、熱処理後に伸線する加工等もされている(特許文献3段落0020、同0054等)。 Therefore, the wire P and the heating temperature at the time of joining the electrode a or the conductive wiring c (stage temperature) and low, for example, be set to about 0.99 ° C., various contrivances to Ensure sufficient bonding strength, for example, It is also processed like for drawing after the heat treatment (Patent Document 3 paragraph 0020, the 0054, etc.).

以上のように、耐酸化金属で銅線を被覆したボンディングワイヤPは、従来から、種々の工夫がなされてそれなりに好評を得ているが、近年の低コスト化に基づく、作業の高速化に伴う接合強度の向上がさらに要求されている。 As described above, the bonding wire P coated copper wire with oxidation metal, conventionally, various contrivances have been well received in its own way been made, based on the recent cost reduction in the speed of the work improvement of the bonding strength is further requests with.

この発明はその要求に応えることを課題とする。 The present invention is an object to respond to the request.

上記課題を達成するために、この発明は、上記の各工夫を全て採用して、ボンディングワイヤPの線径Lは、12μm以上50.8μm以下とし、純度99.99質量%以上の銅からなる芯材1の外周全面に、金、白金、パラジウム、銀の1種以上による厚みt:0.02〜0.09μmの被覆層2を形成したものとしたのである。 To achieve the above object, the present invention may employ all the ingenuity of the wire diameter L of the bonding wire P is a 12μm or 50.8μm or less, a purity of 99.99 mass% or more copper the outer periphery entire surface of the core 1, gold, platinum, palladium, thickness due to one or more silver t: is was assumed that the formation of the coating layer 2 of 0.02~0.09Myuemu.

ボンディングワイヤPの線径Lを、50.8μm以下としたのは、上述の特許文献1ではその径Lを50μm以下としているが、50.8μm以下であれば、50μm以下とかわらない程度でもって、上記ボールbをより小さくできるからである。 The wire diameter L of the bonding wires P, was not more than 50.8 .mu.m, although with less 50μm Patent Document 1, the diameter L of the above, not more than 50.8 .mu.m, with the extent unchanged and 50μm or less This is because the ball b can be further reduced.
また、線径Lの下限を12μm以上としたのは、12μm未満ではボンディング前にオペレータがワイヤPをキャピラリー10aに通すのが困難になり、作業性が悪くなるからである。 Further, the lower limit of the wire diameter L and the above 12 [mu] m, the operator becomes difficult to pass the wire P capillary 10a before bonding is less than 12 [mu] m, because the workability is deteriorated.
芯材1の銅純度を99.99質量%以上としたのは、銅の高導電性を担保するためである。 The copper purity of the core 1 was 99.99 mass% or more, in order to ensure high conductivity of copper.

被覆層2の厚みtは薄いほど、ボールbの硬度が低くなり、Siチップ(電極a)の損傷の可能性が低くなるが、薄すぎると、ステッチボンド接合の際に芯材1の銅が露出する度合いが大きくなり、被覆層2を有さない銅ワイヤ程度のステッチボンド接合性しか発現できない。 The thickness t of the coating layer 2 is as thin, the hardness of the ball b is lowered, but the possibility of damage to the Si chip (electrode a) is lowered, too thin, copper core 1 during stitch bond bonding degree of exposure is increased, it can only express stitch bond bondability about copper wire having no coating layer 2. 例えば、後記実施例と比較例の実験結果から理解できるように、2回以上のマシンストップが生じる恐れがある。 For example, as can be understood from the experimental results of the comparative examples and examples below, there is a possibility that more than two machines stop occurs. このため、その実施例と比較例の実験結果から、被覆層2の厚みtは0.02μm以上とする。 Thus, from the experimental results of the comparative examples and embodiments thereof, the thickness t of the coating layer 2 is not less than 0.02 [mu] m.
なお、ステージ温度:150℃程の低温度でのボールボンディングの時には、連続ボンディング性の実験結果からその厚みtを0.04μm以上、より好ましくは、その0.04μmを越えるものとする。 Incidentally, stage temperature: when the degree 0.99 ° C. ball bonding at low temperatures, than 0.04 .mu.m and the thickness t from the experimental results of continuous bonding, more preferably, shall exceed the 0.04 .mu.m. ステージ温度を低くすると、ステッチボンド接合に要する加重が大きくなり、被覆層2の厚みtが0.02μm以上から0.04μm未満の範囲では芯材の銅が露出する度合いが大きくなり、連続ボンディング性が損なわれることがあるからである。 A lower stage temperature, weight increases required to stitch bond bonding, the degree of copper of the core material is exposed is increased in the range of less than 0.04μm from the thickness t of the coating layer 2 is more than 0.02 [mu] m, continuous bondability This is because it may be impaired.
一方、被覆層2が厚いと、ボールbの硬度が高くなり、Siチップ(電極a)の損傷の可能性が高くなる。 On the other hand, when a thick coating layer 2, the hardness of the ball b is increased, the possibility of damage to the Si chip (electrode a) is increased. このため、後記実施例と比較例の実験結果から、被覆層2の厚みtは0.09μm以下とする。 Thus, from the experimental results of the comparative examples and examples below, the thickness t of the coating layer 2 is not more than 0.09 .mu.m.

被覆金属を金、白金、パラジウム及び銀としたのは、これらの貴金属が電子材料の被覆材として一般的であり、入手が比較的に容易であるからである。 Coated metal gold, platinum, was a palladium and silver are common these precious metals as a coating material for electronic materials, because availability is a relatively easy. これらの純度も芯材1の銅と同様に99.99質量%以上とすることが好ましい。 These purity is preferably a similarly 99.99 mass% or more and copper core 1. 被覆層2はこれらの貴金属の1 Coating layer 2 is one of these noble metals
つで形成しても良いが、2種以上の金属の多層とすることもできる。 It may be formed at One, but could be of two or more metal layers.

以上から、このボンディングワイヤPの構成としては、集積回路素子の電極aと回路配線基板の導体配線cをボールボンディング法によって接続するための線径L:12μm以上50.8μm以下のボンディングワイヤPにおいて、芯材1が純度99.99質量%以上の銅からなり、その芯材1の外周全面に、金、白金、パラジウム、銀の1種以上による厚み0.02〜0.09μmの被覆層2を形成した構成を採用する。 From the above, as the configuration of the bonding wire P, wire diameter L for connecting the electrode a and the circuit wiring conductor wiring c of the substrate of the integrated circuit device by a ball bonding method: In 12μm or 50.8μm or less of the bonding wire P , core 1 is made of a purity of 99.99 mass% or more copper, its outer periphery entire surface of the core 1, gold, platinum, palladium, coating layer thickness 0.02~0.09μm by one or more silver 2 to adopt the formed constitute a.
この構成において、ステージ温度:150℃程の低温度でのボールボンディング用ボンディングワイヤにおいては、その被覆層の厚みtは0.04〜0.09μmとする。 In this configuration, the stage temperature at the ball bonding bonding wires at low temperatures degree 0.99 ° C., the thickness t of the coating layer is a 0.04~0.09Myuemu.

これらの構成のボンディングワイヤPの製造方法には種々のものが採用できるが、例えば、純度99.99質量%以上の銅からなる芯材1の外周全面に、金、白金、パラジウム、銀の1種以上による被覆層2を形成し、その被覆線を拡散熱処理して芯材と被覆層の密着性を高めた後、線径12μm以上50.8μm以下まで伸線し、さらに、引張伸びが8%以上となるように調質熱処理を行って、被覆層2の厚みt0.02〜0.09μmとした構成を採用できる。 Although the method for manufacturing a bonding wire P of these configurations can be adopted various ones, for example, on the outer circumference entire surface of the core material 1 made of a purity of 99.99 mass% or more copper, gold, platinum, palladium, silver 1 to form a coating layer 2 by species or more, after improving the adhesion of the core and the coating layer by diffusion heat treatment the coated wire was drawn to higher diameter 12 [mu] m 50.8 .mu.m or less, and further, tensile elongation 8 go% or more so as to temper heat treatment, it can be adopted a configuration in which the thickness t0.02~0.09μm coating layer 2.

これらの構成において、上記被覆層2をその融点が上記銅の融点より高いパラジウム又は白金がより好ましいと考えることができる。 In these configurations, the coating layer 2 whose melting point can be considered as high palladium or platinum than the melting point of the copper is more preferred.
上述のように、芯材1の銅よりも高融点の耐酸化金属で被覆層2を形成すれば、ボールbの真球度が増すことが確認されているが、本発明者は、その理由として、放電によって銅が溶融して真球となる時、その溶融部分が表面張力によって真上にワイヤを這い上がっていくが、被覆層2も溶融していると、その這い上がりが悪くなって、真球になりにくいためと考えた。 As described above, by forming the coating layer 2 of a refractory oxidation metal than copper of the core material 1, it has been confirmed that sphericity of the ball b is increased, the present inventors have reason as, when the copper by the discharge is to melt a sphere, its is melted portion is gradually creeps up the wire directly above the surface tension, the coating layer 2 is also melted, the upward expansion becomes poor , it was thought to be because less likely to perfect sphere. このことは、0.02〜0.09μm厚の被覆層2であると、顕著に表れる。 This means that, if it is 0.02~0.09μm thick coating layer 2, conspicuous.
また、パラジウムと白金では、パラジウムの方がボールbを真球にできる条件のマージン(限界)が広くなる。 Further, the palladium and platinum, the margin of the conditions towards the palladium can the ball b on the sphericity (limit) is widened. これは、パラジウムの融点が白金の融点に比べて銅の融点に近いためと考えられる。 It has a melting point of palladium is considered close to the melting point of copper than the melting point of platinum. すなわち、被覆層2に白金を用いると、放電による銅の溶融後に白金が溶融するまでに時間差が生じるためである。 That is, the use of platinum in the coating layer 2, platinum after melting of copper by the discharge is because the time difference until the melt occurs. 被覆層2にパラジウムを用いれば、溶融の時間差は小さくなるため、より真球になりやすい。 The use of palladium in the coating layer 2, since the smaller the time difference of the melting, more likely to be perfectly spherical.

因みに、上記純銅の融点:1083℃、金の融点:1064℃、パラジウムの融点:1554℃、銀の融点:962℃、白金の融点:1772℃である。 Incidentally, the pure copper melting point: 1083 ° C., gold mp: 1064 ° C., palladium melting point: 1554 ° C., the melting point of silver: 962 ° C., platinum melting point: a 1772 ° C..
また、被覆層2の厚みtを0.04μm以上とした場合、ステージ温度150℃でもマシントラブルが少なくなるが、特にパラジウムを被覆層2に採用し、被覆層2の厚みtを0.05μm以上とした時にはステージ温度をより低温の135℃としたときでもマシントラブルが起こらないことも確認されている。 Also, when the thickness t of the coating layer 2 not less than 0.04 .mu.m, although stage temperature 0.99 ° C. But the machine trouble is reduced, in particular to adopt a palladium coating layer 2, 0.05 .mu.m or more the thickness t of the coating layer 2 machine trouble, even when the lower temperature of 135 ℃ the stage temperature is when and has also been confirmed that does not occur. これは、パラジウム被覆層2の場合、上記のように、銅とパラジウムの溶融時間差が小さく、より真球になりやすいこととの相乗効果に基づくものと考える。 This is because, in the case of the palladium coating layer 2, as described above, the melting time difference between copper and palladium is small, considered to be based on the synergistic effect with the more likely to be perfectly spherical.

さらに、上記芯材の銅純度を99.999質量%以上とすれば、後記実施例と比較例の実験結果から理解できるように、Siチップ(電極a)の損傷の可能性が低くなる。 Further, if a copper purity of the core material and 99.999 mass% or more, as can be seen from the experimental results of the comparative examples and examples below, the possibility of damage to the Si chip (electrode a) is reduced. これは、銅純度を99.999質量%以上とすることで、FAB硬度をより低減できるからである。 This copper purity With 99.999 mass% or more, the can be further reduced FAB hardness.

さらに、被覆層2は、電解メッキ、無電解メッキ、蒸着法等の周知の手段によって形成され、一般に、ワイヤPは大きな線径の銅ロッドをダイスと呼ばれるツールに順次貫通させていくことにより、所定の線径に仕上げられるため、この工程途中の適宜な線径で被覆層2を上記手段により形成する。 Further, the coating layer 2, electrolytic plating, electroless plating, is formed by known means of vapor deposition or the like, generally, the wire P is by going by sequentially through the copper rod big diameter in tool called die, order to be finished to a predetermined wire diameter, the coating layer 2 is formed by the means appropriate wire diameter of the step along the way. このとき、被覆する際の芯材1の線径は作業性・コストにより決定されるが、製造装置の制限から0.2〜0.8mmが一般的である。 At this time, the wire diameter of the core 1 at the time of coating is determined by the workability, cost, 0.2 to 0.8 mm from the manufacturing device limitations are common. 外周全面にパラジウム等の金属を被覆された被覆線は200〜500℃(被覆線の温度)で拡散熱処理を施して前記芯材1と被覆層2の密着性を高めた後、線径12μm以上50.8μm以下まで伸線し、さらに、引張伸びが8%以上となるように調質熱処理を行って、被覆層2の厚みt0.02〜0.09μmとすることができる。 After improving the adhesion of the core material 1 and the coating layer 2 is subjected to diffusion heat treatment in an outer peripheral entire surface coated with a metal such as palladium were covered wire 200 to 500 ° C. (temperature of the coated wire), or diameter 12μm It was drawn to 50.8μm or less, further, the tensile elongation is performed in refining heat treatment so that more than 8%, it is possible to the thickness of the coating layer 2 t0.02~0.09μm.
引張伸びを8%以上とするのは、ステッチボンド接合性を上げ、より安定したボンディング性を得るためである。 To the tensile elongation is 8% or more, increasing the stitch bond bondability is to obtain a more stable bonding properties.
このとき、被覆層がパラジウムから成れば、芯材の銅純度を99.999質量%以上とし、その被覆層の厚みtを0.05〜0.09μmとすることができる。 At this time, if the coating layer is palladium, copper purity of the core material and 99.999 mass% or more, it is possible to make the thickness t of the coating layer and 0.05~0.09Myuemu.

この発明は、以上のようにしたので、安定した接合強度を有する純銅に貴金属を被覆したボンディングワイヤを得ることができる。 The present invention, since as described above, it is possible to obtain a bonding wire coated with noble metal pure copper having a stable bonding strength.

ボールボンディング接続法の説明図であり、(a)〜(h)はその途中図 Is an explanatory view of the ball bonding connection method, (a) ~ (h) is the middle view この発明に係るボンディングワイヤの断面図 Sectional view of a bonding wire according to the present invention オージェピーク強度と被覆層(メッキ層)深さの関係図 Auger peak intensities and the covering layer (plating layer) depth relationship diagram

表1に示す実施例1〜45及び比較例1〜13を製作し、そのボンディングワイヤPの1st接合部のSiチップ(電極a)の損傷度合、及び連続ボンディング性の試験を行った。 Examples are shown in Tables 1 1 and 45 and to prepare a comparative example 1 to 13, Si chip degree of damage (electrode a) of the 1st-joined part of the bonding wire P, and the continuity bonding of the test were carried out.
すなわち、まず、銅純度99.99質量%の純銅(表1中:4N)と銅純度99.999質量%の純銅(表1中:5N)の0.2〜0.8mm径の銅線を用意し、その銅線に、Au、Pd、Pt及びAgの貴金属を電解メッキ法によって被覆し、その被覆線を巻き戻し、焼鈍炉を通したのち、再び巻き取り用リールで巻き取ることによって連続拡散熱処理を行った。 That is, first, a copper purity of 99.99 wt% pure copper (in Table 1: 4N) and copper purity of 99.999 mass% of pure copper (in Table 1: 5N) copper wire 0.2~0.8mm diameter continuous prepared, its copper wire, Au, Pd, by covering with a noble metal Pt and Ag electroplating method, rewind the coated wire, then through the annealing furnace, wound at a take-up reel again the diffusion heat treatment was carried out. 焼鈍炉は炉長1mの炉芯管を有する電気炉を用い、炉芯管には窒素ガスを流した。 Annealing furnace using an electric furnace having a furnace core tube Rochow 1 m, the furnace core tube was flushed with nitrogen gas. その炉温度は500℃以上800℃以下として被覆線の温度を200〜500℃とし、その被覆線の走行速度は5〜60m/分とした。 Its furnace temperature was 200 to 500 ° C. The temperature of the covered wire as follows 800 ° C. 500 ° C. or higher, the running speed of the coated wire was 5~60M / min. 以上の拡散熱処理を施して銅線(芯材)1と被覆層2の密着性を高めた後、線径15〜50.8μmまで伸線し、さらに、引張伸びが8%以上となるように調質熱処理を行って、被覆層2の厚みt:0.001〜0.112μmのボンディングワイヤP(実施例1〜45及び比較例1〜13)を得た。 Subjected to more diffusion heat treatment after the elevated copper wire (core) 1 and the adhesion of the coating layer 2, and drawn to a wire diameter 15~50.8Myuemu, further, as the tensile elongation of 8% or more performing refining heat treatment, the thickness of the covering layer 2 t: bonding wire P (examples 1 to 45 and Comparative examples 1 to 13) of 0.001~0.112μm was obtained. 表1中、2種の貴金属を示す例は、その2種の金属を同一厚で2重被覆したものである。 In Table 1, an example showing the two noble metal is obtained by double coating the two metals at the same thickness.

つぎに、この各ボンディングワイヤPにおいて、下記の評価を行った結果を表1に示す。 Next, in the bonding wires P, it shows the results of evaluation of the following Table 1.

「被覆層(表面皮膜層)2の厚み」: "Coating layer (surface film layer) 2 having a thickness":
オージェ電子分光分析法にて測定した。 It was measured by Auger electron spectroscopy. Arで被覆層の表面からスパッタリングし、単位時間のスパッタリング毎にスペクトル測定を行った。 Sputtered from the surface of the coating layer in Ar, was spectra measured every sputtering unit time. 深さ方向の単位はスパッタ時間とし、事前に測定しておいた標準試料SiO のスパッタリングレートから、対象材の深さ方向の距離をSiO 換算にて算出した。 Units in the depth direction is a sputtering time, the standard sample SiO 2 sputtering rate had been measured beforehand to calculate the distance in the depth direction of the subject material in terms of SiO 2. 被覆層については、図3の通り、対象被覆層元素のオージェピーク強度を縦軸、深さを横軸にとったグラフにおいて、オージェピーク強度が84%の位置から16%の位置までの距離を被覆層の厚みとした。 For coating layer, as in FIG. 3, the vertical axis Auger peak intensity of the target coating layer element, in graph plotting the depth on the horizontal axis, the distance from the position of the Auger peak intensity 84% to 16% of the position and the thickness of the coating layer.

「芯材(銅)の純度」: "Purity of the core material (copper)":
GDMS(グロー放電質量)分析にて全元素の濃度を測定してCu純度を決定した。 GDMS by measuring the concentration of all elements in (glow discharge mass) analysis to determine the Cu purity.

「連続ボンディング性」(1): "Continuous bonding property" (1):
ボンディングマシンで10,000回の連続ボンディングを行い、マシンストップが発生しなければ「A」、1回のマシンストップが発生すれば「B」、2回以上のマシンストップが起これば「D」とした。 Performed 10,000 times continuous bonding a bonding machine, if the machine stop occurs "A", if one machine stop occurs "B", if happens twice or more machines stop "D" and the. このとき、ステージ温度が低くなれば、その連続ボンディングが困難になることから、200℃(±5℃)、150℃(±5℃)の2水準で行った。 At this time, if low stage temperature, since the continuous bonding becomes difficult, 200 ℃ (± 5 ℃), was carried out at two levels of 150 ℃ (± 5 ℃).

「1st接合部のSiチップ損傷」(2): "Si chip damage to the 1st junction" (2):
ボンディング後、1stボール接合部直下のSiチップ損傷を評価するために、ボール接合部aおよび電極膜を王水で溶解し、Siチップのクラックを光顕とSEMで観察した。 After bonding, to evaluate the Si chip damage just below 1st ball joint, the ball joint a and the electrode film was dissolved in aqua regia, to observe cracks Si chip Hikariarawa and SEM. このとき、100個の接合部を観察して5μm以下の微小なピットが1個もしくはまったく見られない場合は「A」、5μm以下の微小なピットが2個以上認められる場合は実用上は有害でないため「B」、5μm以上のクラックが認められた場合は「D」とした。 In this case, if the 100 observed by following a minute pit 5μm the joint are not found one or at all "A", practically detrimental when the following minute pits 5μm are observed two or more "B" for not, if more cracks 5μm was observed was evaluated as "D".

「総合評価」: "Comprehensive evaluation":
(1)の評価が200℃・150℃ともにAであり、かつ(2)の評価がAのものを「A」、(1)の評価が200℃・150℃ともにAであり、かつ(2)の評価がBのものを「B」、(1)の評価が200℃ではAであり、150℃ではBのものを「C」とした。 (1) Evaluation is the 200 ° C. · 0.99 ° C. Both A of, and (2) "A" what evaluation is A, and an evaluation is 200 ° C. · 0.99 ° C. Both A (1), and (2 "B" what evaluation is B) of an evaluation at the 200 ° C. a (1) and those of 0.99 ° C. in B and "C". また、ひとつでもDのあるものについては実用上問題であるので「D」とした。 In addition, it was a "D" because for one, even some of the D is a practical problem.

この試験結果から、被覆層厚tが0.02μm未満であると、200℃及び150℃の両連続ボンディング性が低下し(比較例1、2、4、5、9、10、12)、0.02μmに近くなると、前者の連続ボンディング性が満足できるものとなり(比較例2)、0.02μm以上となると、両者の連続ボンディング性が満足できるものとなることが理解できる(実施例1〜45、比較例3、6〜8、11、13)。 From the test results, when the coating layer thickness t is less than 0.02 [mu] m, and decreases bicontinuous bonding of 200 ° C. and 0.99 ° C. (Comparative Example 1,2,4,5,9,10,12), 0 When close to .02Myuemu, it is assumed that the former continuous bondability is satisfactory (Comparative example 2), if the above 0.02 [mu] m, it can be understood that the that both continuous bondability is satisfactory (example 1-45 , comparative example 3,6~8,11,13).
一方、被覆層厚tが0.09μmを越えると、ボールbが硬くなって、Siチップ(電極a)の損傷が認められるようになる(比較例3、6〜8、11、13)。 On the other hand, when the coating layer thickness t exceeds 0.09 .mu.m, the ball b is harder, so damage to the Si chip (electrode a) is observed (Comparative Example 3,6~8,11,13).
また、純銅5Nを使用し、被覆層厚tを0.04μm以上としたもの(実施例5、12、13、16、20、27、32、34、37、44、45)では、総合評価が「A」となって、ステージ温度が150℃程の低温度においても、連続ボンディング性が良好であってその連続ボンディング性の担保に有効であることが分る。 Further, by using pure copper 5N, in which the coating layer thickness t was above 0.04 .mu.m (Example 5,12,13,16,20,27,32,34,37,44,45), overall evaluation is "a", even at low temperatures of extent stage temperature is 0.99 ° C., it is found that continuous bonding property is effective as collateral for the continuous bonding property was good. 特に、被覆層厚tが0.05μm以上では顕著である(実施例12、13、16)。 In particular, the coating layer thickness t is significant at 0.05μm or more (Examples 12, 13, 16).

P ボンディングワイヤ1 芯材2 被覆層a 集積回路素子の電極b ボンディングボールc 回路配線基板の導体配線 P bonding wire 1 core 2 coating layer a electrode b bonding ball c circuit wiring board conductor wiring of the integrated circuit device

Claims (7)

  1. 集積回路素子の電極(a)と回路配線基板の導体配線(c)をボールボンディング法によって接続するための線径(L)12μm以上50.8μm以下のボンディングワイヤ(P)であって、芯材(1)が純度99.99質量%以上の銅からなり、その芯材(1)の外周全面に、金、白金、パラジウム、銀の1種以上による厚み(t)0.02〜0.09μmの被覆層(2)を形成したことを特徴とするボンディングワイヤ。 An electrode of the integrated circuit elements (a) and the circuit wiring board conductor wiring diameter for the (c) is connected by ball bonding method (L) 12 [mu] m or more 50.8μm or less of the bonding wire (P), the core material (1) consists of a purity of 99.99 mass% or more copper, the outer peripheral entire surface of the core (1), gold, platinum, palladium, thickness due to one or more of silver (t) 0.02~0.09Myuemu bonding wires, characterized in that the formation of the coating layer (2).
  2. 上記被覆層(2)の厚み(t)が0.04〜0.09μmであることを特徴とする請求項1に記載のボンディングワイヤ。 Bonding wire according to claim 1, thickness of the coating layer (2) (t) is characterized in that it is a 0.04~0.09Myuemu.
  3. 上記被覆層(2)をその融点が上記銅の融点より高いパラジウム又は白金としたことを特徴とする請求項1又は2に記載のボンディングワイヤ。 Bonding wire according to claim 1 or 2 the coating layer (2) whose melting point is characterized in that a higher palladium or platinum than the melting point of the copper.
  4. 上記被覆層(2)をその融点が上記銅の融点より高いパラジウムとし、その厚み(t)が0.05〜0.09μmであることを特徴とする請求項1に記載のボンディングワイヤ。 Bonding wire according to claim 1, wherein said coating layer (2) its melting point and higher palladium than the melting point of the copper, its thickness (t) is characterized in that it is a 0.05~0.09Myuemu.
  5. 上記芯材(1)の銅純度を99.999質量%以上としたことを特徴とする請求項1〜4の何れか1つに記載のボンディングワイヤ。 Bonding wire according to any one of claims 1 to 4, characterized in that the core material of copper purity (1) and 99.999% by mass or more.
  6. 集積回路素子の電極(a)と回路配線基板の導体配線(c)をボールボンディング法によって接続するための請求項1〜4の何れか1つに記載のボンディングワイヤ(P)の製造方法であって、純度99.99質量%以上の銅からなる芯材(1)の外周全面に、金、白金、パラジウム、銀の1種以上による被覆層(2)を形成し、その被覆線を拡散熱処理して前記芯材(1)と被覆層(2)の密着性を高めた後、線径(L)12μm以上50.8μm以下まで伸線し、さらに、引張伸びが8%以上となるように調質熱処理を行ったことを特徴とするボンディングワイヤの製造方法。 A method of manufacturing the electrode of the integrated circuit elements (a) and circuit bonding wire according the wiring board of the conductor wiring (c) to any one of claims 1 to 4 for connecting the ball bonding method (P) Te, the outer periphery entire surface of the core material made of a purity of 99.99 mass% or more copper (1), formed of gold, platinum, palladium, the coating layer according to one or more silver (2), diffusion heat treatment the coated wire after improving the adhesion of the core material (1) and the coating layer (2) and, then drawn to wire diameter (L) 12 [mu] m or more 50.8μm or less, further, as the tensile elongation of 8% or more bonding wire manufacturing method characterized by performing the tempering heat treatment.
  7. 上記芯材(1)の銅純度を99.999質量%以上とし、上記被覆層(2)がパラジウムから成ってその厚み(t)を0.05〜0.09μmとしたことを特徴とする請求項6に記載のボンディングワイヤの製造方法。 Claims the core material of copper purity (1) and 99.999 mass% or more, and characterized in that the thickness (t) of the 0.05~0.09μm the covering layer (2) is made of palladium bonding wire manufacturing method according to claim 6.
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