IT1038800B - Tranistore planare di potenza - Google Patents

Tranistore planare di potenza

Info

Publication number
IT1038800B
IT1038800B IT24160/75A IT2416075A IT1038800B IT 1038800 B IT1038800 B IT 1038800B IT 24160/75 A IT24160/75 A IT 24160/75A IT 2416075 A IT2416075 A IT 2416075A IT 1038800 B IT1038800 B IT 1038800B
Authority
IT
Italy
Prior art keywords
tranistor
planar power
planar
power
power tranistor
Prior art date
Application number
IT24160/75A
Other languages
English (en)
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT24160/75A priority Critical patent/IT1038800B/it
Priority to GB23597/76A priority patent/GB1530168A/en
Priority to FR7617513A priority patent/FR2314582A1/fr
Priority to DE19762625989 priority patent/DE2625989A1/de
Priority to JP51067212A priority patent/JPS5234676A/ja
Priority to DE19767618399U priority patent/DE7618399U1/de
Priority to US05/694,791 priority patent/US4072979A/en
Application granted granted Critical
Publication of IT1038800B publication Critical patent/IT1038800B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
IT24160/75A 1975-06-10 1975-06-10 Tranistore planare di potenza IT1038800B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT24160/75A IT1038800B (it) 1975-06-10 1975-06-10 Tranistore planare di potenza
GB23597/76A GB1530168A (en) 1975-06-10 1976-06-08 Semiconductor device of the planar epitaxial type
FR7617513A FR2314582A1 (fr) 1975-06-10 1976-06-10 Dispositif a semi-conducteur du type planaire epitaxial
DE19762625989 DE2625989A1 (de) 1975-06-10 1976-06-10 Halbleiterelement
JP51067212A JPS5234676A (en) 1975-06-10 1976-06-10 Semiconductor device
DE19767618399U DE7618399U1 (de) 1975-06-10 1976-06-10 Halbleiterelement
US05/694,791 US4072979A (en) 1975-06-10 1976-06-10 Integrated power amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT24160/75A IT1038800B (it) 1975-06-10 1975-06-10 Tranistore planare di potenza

Publications (1)

Publication Number Publication Date
IT1038800B true IT1038800B (it) 1979-11-30

Family

ID=11212296

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24160/75A IT1038800B (it) 1975-06-10 1975-06-10 Tranistore planare di potenza

Country Status (6)

Country Link
US (1) US4072979A (it)
JP (1) JPS5234676A (it)
DE (2) DE7618399U1 (it)
FR (1) FR2314582A1 (it)
GB (1) GB1530168A (it)
IT (1) IT1038800B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551125A (en) * 1978-06-20 1980-01-07 Toshiba Corp Semiconductor device
JPS55138273A (en) * 1979-04-11 1980-10-28 Fujitsu Ltd Transistor
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
JPS57100755A (en) * 1980-12-15 1982-06-23 Fujitsu Ltd Semiconductor device
US4430583A (en) * 1981-10-30 1984-02-07 Bell Telephone Laboratories, Incorporated Apparatus for increasing the speed of a circuit having a string of IGFETs
DE3201296C2 (de) * 1982-01-18 1986-06-12 Institut elektrodinamiki Akademii Nauk Ukrainskoj SSR, Kiev Transistoranordnung
US4446445A (en) * 1982-11-24 1984-05-01 Rockwell International Corporation Singly terminated push-pull distributed amplifier
US4654687A (en) * 1985-03-28 1987-03-31 Francois Hebert High frequency bipolar transistor structures
JPH07118621B2 (ja) * 1985-08-08 1995-12-18 シ−メンス、アクチエンゲゼルシヤフト パワ−トランジスタ装置
EP0413479A1 (en) * 1989-08-14 1991-02-20 Delco Electronics Corporation Uniform temperature power transistor
IT1252102B (it) * 1991-11-26 1995-06-02 Cons Ric Microelettronica Dispositivo monolitico a semiconduttore a struttura verticale con transistore di potenza a base profonda e emettitore a dita avente resistenze di ballast
FR2697698A1 (fr) * 1992-11-04 1994-05-06 Philips Electronique Lab Dispositif semiconducteur comprenant un circuit amplificateur distribué monolithiquement intégré, à large bande et fort gain.
CA2204382A1 (en) * 1994-11-03 1996-05-17 Ted Johansson Ballast monitoring for radio frequency power transistors
JP2002076014A (ja) * 2000-08-30 2002-03-15 Mitsubishi Electric Corp 高周波用半導体装置
JP2002171141A (ja) * 2000-11-30 2002-06-14 Mitsubishi Electric Corp 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers
US3619741A (en) * 1969-11-24 1971-11-09 Texas Instruments Inc Method of providing integrated diffused emitter ballast resistors for improved power capabilities of semiconductor devices
US3812478A (en) * 1971-07-31 1974-05-21 Nippon Musical Instruments Mfg Semiconductor storage device
US3936863A (en) * 1974-09-09 1976-02-03 Rca Corporation Integrated power transistor with ballasting resistance and breakdown protection

Also Published As

Publication number Publication date
JPS5441469B2 (it) 1979-12-08
FR2314582A1 (fr) 1977-01-07
US4072979A (en) 1978-02-07
DE2625989A1 (de) 1976-12-16
GB1530168A (en) 1978-10-25
JPS5234676A (en) 1977-03-16
DE7618399U1 (de) 1979-07-19
FR2314582B1 (it) 1978-10-13

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940629