IT1122226B - Dispositivo semiconduttore - Google Patents
Dispositivo semiconduttoreInfo
- Publication number
- IT1122226B IT1122226B IT24514/79A IT2451479A IT1122226B IT 1122226 B IT1122226 B IT 1122226B IT 24514/79 A IT24514/79 A IT 24514/79A IT 2451479 A IT2451479 A IT 2451479A IT 1122226 B IT1122226 B IT 1122226B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductive device
- semiconductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/801—FETs having heterojunction gate electrodes
- H10D30/803—Programmable transistors, e.g. having charge-trapping quantum well
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/109—Reduced surface field [RESURF] PN junction structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/378—Contact regions to the substrate regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7807835,A NL184552C (nl) | 1978-07-24 | 1978-07-24 | Halfgeleiderinrichting voor hoge spanningen. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7924514A0 IT7924514A0 (it) | 1979-07-20 |
| IT1122226B true IT1122226B (it) | 1986-04-23 |
Family
ID=19831291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24514/79A IT1122226B (it) | 1978-07-24 | 1979-07-20 | Dispositivo semiconduttore |
Country Status (15)
| Country | Link |
|---|---|
| JP (1) | JPS5924550B2 (it) |
| AT (1) | AT382042B (it) |
| AU (1) | AU521670B2 (it) |
| BE (1) | BE877850A (it) |
| BR (1) | BR7904692A (it) |
| CA (1) | CA1134055A (it) |
| CH (1) | CH648693A5 (it) |
| DE (2) | DE2927662C2 (it) |
| ES (1) | ES482691A1 (it) |
| FR (1) | FR2434487A1 (it) |
| GB (1) | GB2026240B (it) |
| IT (1) | IT1122226B (it) |
| NL (1) | NL184552C (it) |
| PL (2) | PL119597B1 (it) |
| SE (1) | SE437094B (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2070858B (en) * | 1980-03-03 | 1985-02-06 | Raytheon Co | Shallow channel field effect transistor |
| US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
| US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
| GB2133621B (en) * | 1983-01-11 | 1987-02-04 | Emi Ltd | Junction field effect transistor |
| NL8304256A (nl) * | 1983-12-09 | 1985-07-01 | Philips Nv | Halfgeleiderinrichting. |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL161621C (nl) * | 1968-10-16 | 1980-02-15 | Philips Nv | Halfgeleiderinrichting met veldeffecttransistor. |
| JPS4932028B1 (it) * | 1969-06-24 | 1974-08-27 | ||
| US3814992A (en) * | 1972-06-22 | 1974-06-04 | Ibm | High performance fet |
| US4037245A (en) | 1975-11-28 | 1977-07-19 | General Electric Company | Electric field controlled diode with a current controlling surface grid |
-
1978
- 1978-07-24 NL NLAANVRAGE7807835,A patent/NL184552C/xx not_active IP Right Cessation
-
1979
- 1979-07-09 DE DE2927662A patent/DE2927662C2/de not_active Expired
- 1979-07-09 DE DE2954286A patent/DE2954286C2/de not_active Expired
- 1979-07-19 CA CA332,190A patent/CA1134055A/en not_active Expired
- 1979-07-19 AU AU49061/79A patent/AU521670B2/en not_active Ceased
- 1979-07-20 PL PL1979217279D patent/PL119597B1/pl unknown
- 1979-07-20 IT IT24514/79A patent/IT1122226B/it active
- 1979-07-20 PL PL21727979A patent/PL217279A1/xx unknown
- 1979-07-20 CH CH6783/79A patent/CH648693A5/de not_active IP Right Cessation
- 1979-07-20 GB GB7925316A patent/GB2026240B/en not_active Expired
- 1979-07-20 ES ES482691A patent/ES482691A1/es not_active Expired
- 1979-07-21 JP JP54092147A patent/JPS5924550B2/ja not_active Expired
- 1979-07-23 BR BR7904692A patent/BR7904692A/pt unknown
- 1979-07-23 BE BE0/196422A patent/BE877850A/fr not_active IP Right Cessation
- 1979-07-23 FR FR7918941A patent/FR2434487A1/fr active Granted
- 1979-07-23 SE SE7906289A patent/SE437094B/sv not_active IP Right Cessation
- 1979-07-24 AT AT0509379A patent/AT382042B/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IT7924514A0 (it) | 1979-07-20 |
| NL7807835A (nl) | 1980-01-28 |
| GB2026240A (en) | 1980-01-30 |
| JPS5518098A (en) | 1980-02-07 |
| GB2026240B (en) | 1982-12-01 |
| CA1134055A (en) | 1982-10-19 |
| DE2927662A1 (de) | 1980-02-07 |
| CH648693A5 (de) | 1985-03-29 |
| FR2434487B1 (it) | 1984-06-29 |
| PL119597B1 (en) | 1982-01-30 |
| NL184552B (nl) | 1989-03-16 |
| BR7904692A (pt) | 1980-04-15 |
| NL184552C (nl) | 1989-08-16 |
| AU521670B2 (en) | 1982-04-22 |
| ES482691A1 (es) | 1980-03-01 |
| DE2927662C2 (de) | 1984-01-12 |
| PL217279A1 (it) | 1980-08-11 |
| AT382042B (de) | 1986-12-29 |
| AU4906179A (en) | 1980-01-31 |
| BE877850A (fr) | 1980-01-23 |
| ATA509379A (de) | 1986-05-15 |
| SE437094B (sv) | 1985-02-04 |
| SE7906289L (sv) | 1980-01-25 |
| DE2954286C2 (de) | 1986-04-17 |
| FR2434487A1 (fr) | 1980-03-21 |
| JPS5924550B2 (ja) | 1984-06-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970729 |