IT1110956B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number
IT1110956B
IT1110956B IT19985/79A IT1998579A IT1110956B IT 1110956 B IT1110956 B IT 1110956B IT 19985/79 A IT19985/79 A IT 19985/79A IT 1998579 A IT1998579 A IT 1998579A IT 1110956 B IT1110956 B IT 1110956B
Authority
IT
Italy
Prior art keywords
semiconductive device
semiconductive
Prior art date
Application number
IT19985/79A
Other languages
English (en)
Other versions
IT7919985A0 (it
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT7919985A0 publication Critical patent/IT7919985A0/it
Application granted granted Critical
Publication of IT1110956B publication Critical patent/IT1110956B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926Elongated lead extending axially through another elongated lead
IT19985/79A 1978-02-10 1979-02-07 Dispositivo semiconduttore IT1110956B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7801532A NL7801532A (nl) 1978-02-10 1978-02-10 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
IT7919985A0 IT7919985A0 (it) 1979-02-07
IT1110956B true IT1110956B (it) 1986-01-13

Family

ID=19830307

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19985/79A IT1110956B (it) 1978-02-10 1979-02-07 Dispositivo semiconduttore

Country Status (8)

Country Link
US (1) US4254427A (it)
JP (1) JPS54114987A (it)
AU (1) AU4405179A (it)
DE (1) DE2904254A1 (it)
FR (1) FR2417164A1 (it)
GB (1) GB2014362B (it)
IT (1) IT1110956B (it)
NL (1) NL7801532A (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4373165A (en) * 1979-11-07 1983-02-08 Texas Instruments Incorporated Very high density punch-through read-only-memory
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means
NL8103376A (nl) * 1981-07-16 1983-02-16 Philips Nv Weergeefinrichting.
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
US4608585A (en) * 1982-07-30 1986-08-26 Signetics Corporation Electrically erasable PROM cell
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
DE3502713A1 (de) * 1985-01-28 1986-07-31 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte schaltung mit untertunnelung
US5661047A (en) * 1994-10-05 1997-08-26 United Microelectronics Corporation Method for forming bipolar ROM device
EP1759392A2 (en) * 2004-06-16 2007-03-07 Koninklijke Philips Electronics N.V. Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor
US9842184B2 (en) * 2015-09-11 2017-12-12 Globalfoundries Inc. Method, apparatus and system for using hybrid library track design for SOI technology

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1276791A (en) * 1969-01-22 1972-06-07 Tokyo Shibaura Electric Co Semiconductor device
US4163985A (en) * 1977-09-30 1979-08-07 The United States Of America As Represented By The Secretary Of The Air Force Nonvolatile punch through memory cell with buried n+ region in channel

Also Published As

Publication number Publication date
GB2014362B (en) 1982-02-24
US4254427A (en) 1981-03-03
IT7919985A0 (it) 1979-02-07
GB2014362A (en) 1979-08-22
FR2417164A1 (fr) 1979-09-07
FR2417164B1 (it) 1983-03-11
AU4405179A (en) 1979-08-16
DE2904254A1 (de) 1979-08-16
NL7801532A (nl) 1979-08-14
JPS54114987A (en) 1979-09-07

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