JPS54114987A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS54114987A
JPS54114987A JP1235779A JP1235779A JPS54114987A JP S54114987 A JPS54114987 A JP S54114987A JP 1235779 A JP1235779 A JP 1235779A JP 1235779 A JP1235779 A JP 1235779A JP S54114987 A JPS54114987 A JP S54114987A
Authority
JP
Japan
Prior art keywords
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1235779A
Other languages
English (en)
Inventor
Roosutoroo Yan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS54114987A publication Critical patent/JPS54114987A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP1235779A 1978-02-10 1979-02-07 Semiconductor Pending JPS54114987A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7801532A NL7801532A (nl) 1978-02-10 1978-02-10 Halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
JPS54114987A true JPS54114987A (en) 1979-09-07

Family

ID=19830307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1235779A Pending JPS54114987A (en) 1978-02-10 1979-02-07 Semiconductor

Country Status (8)

Country Link
US (1) US4254427A (ja)
JP (1) JPS54114987A (ja)
AU (1) AU4405179A (ja)
DE (1) DE2904254A1 (ja)
FR (1) FR2417164A1 (ja)
GB (1) GB2014362B (ja)
IT (1) IT1110956B (ja)
NL (1) NL7801532A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4373165A (en) * 1979-11-07 1983-02-08 Texas Instruments Incorporated Very high density punch-through read-only-memory
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means
NL8103376A (nl) * 1981-07-16 1983-02-16 Philips Nv Weergeefinrichting.
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
US4608585A (en) * 1982-07-30 1986-08-26 Signetics Corporation Electrically erasable PROM cell
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
DE3502713A1 (de) * 1985-01-28 1986-07-31 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte schaltung mit untertunnelung
US5661047A (en) * 1994-10-05 1997-08-26 United Microelectronics Corporation Method for forming bipolar ROM device
CN101006517A (zh) * 2004-06-16 2007-07-25 皇家飞利浦电子股份有限公司 电气器件及其制造方法
US9842184B2 (en) * 2015-09-11 2017-12-12 Globalfoundries Inc. Method, apparatus and system for using hybrid library track design for SOI technology

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1276791A (en) * 1969-01-22 1972-06-07 Tokyo Shibaura Electric Co Semiconductor device
US4163985A (en) * 1977-09-30 1979-08-07 The United States Of America As Represented By The Secretary Of The Air Force Nonvolatile punch through memory cell with buried n+ region in channel

Also Published As

Publication number Publication date
FR2417164A1 (fr) 1979-09-07
FR2417164B1 (ja) 1983-03-11
AU4405179A (en) 1979-08-16
NL7801532A (nl) 1979-08-14
GB2014362A (en) 1979-08-22
IT1110956B (it) 1986-01-13
US4254427A (en) 1981-03-03
GB2014362B (en) 1982-02-24
IT7919985A0 (it) 1979-02-07
DE2904254A1 (de) 1979-08-16

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